JP2013162012A - Tape for wafer processing, and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a tape for wafer processing, capable of moderately splitting a semiconductor wafer and an adhesive layer upon expanding at a stealth dicing step of splitting the semiconductor wafer and an adhesive layer, or other steps, and a method for manufacturing the same.SOLUTION: A tape for wafer processing includes: a peeling base material forming a base portion of the tape; an adhesive layer provided on one side of the peeling base material corresponding to a planar shape of a semiconductor wafer; a cohesive layer provided so as to cover the adhesive layer; and a base material film provided so as to cover the cohesive layer. In the cohesive layer and the base material film, a region extended to the outside of the adhesive layer is a sticking region to a wafer ring, and a region of the base film overlapping with the adhesive layer includes a plurality of notches formed from an opposite side to the adhesive layer side.

Description

  The present invention relates to a wafer processing tape used for dicing a semiconductor wafer and die bonding of a semiconductor chip obtained by dicing, and a method for manufacturing the wafer processing tape.

  In recent years, there has been a rapid increase in demands for multifunctional, lightweight, and miniaturized mobile-related devices. Accordingly, there is an increasing need for high-density mounting of semiconductor chips, and in particular, the development of a stacked multichip package in which semiconductor chips are stacked is the center. In a stacked multichip package, semiconductor chips may be stacked and bonded together in a die bonding process. In such a semiconductor chip manufacturing process, the introduction of a wafer processing tape that can be used together for fixing a semiconductor wafer in a dicing process or bonding a semiconductor chip to a lead frame or the like in a die bonding process is in progress (for example, Patent Documents). 1).

  When producing such a wafer processing tape, first prepare an adhesive film in which an adhesive layer is formed on a release substrate and a dicing film in which an adhesive layer is formed on the substrate film. The adhesive layer and the pressure-sensitive adhesive layer face each other and are bonded together. Next, the base film, the adhesive layer, and the pressure-sensitive adhesive layer are pre-cut according to the wafer shape to obtain a wafer processing tape having a desired shape.

JP 2009-88480 A

  In the case of processing a semiconductor wafer using the wafer processing tape as described above, after the wafer processing tape is attached to the semiconductor wafer, the process proceeds to a process of dividing the semiconductor wafer (dicing process). Conventionally, dicing using a blade has been the mainstream as the dicing process. However, as the semiconductor wafer is thinned, the semiconductor wafer is modified by a laser, and then expanded under cooling, so that the semiconductor wafer and the adhesive layer The stealth dicing process etc. which divide this are examined. If the strength of the base film is not appropriate at the time of expansion under the cooling, the semiconductor wafer and the adhesive layer cannot be divided well, and there is a risk of hindering the execution of the process.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide a wafer processing tape capable of appropriately dividing a semiconductor wafer and an adhesive layer at the time of expansion, and a method for manufacturing the wafer processing tape. And

  In order to solve the above problems, a wafer processing tape according to the present invention is a wafer processing tape that is used by being attached to a wafer ring during processing of a semiconductor wafer, and includes a peeling base material that forms the base of the tape, and a semiconductor wafer An adhesive layer provided on one side of the release substrate corresponding to the planar shape, an adhesive layer provided to cover the adhesive layer, and a base film provided to cover the adhesive layer; In the adhesive layer and the base film, the area that protrudes outside the adhesive layer is a sticking area to the wafer ring, and the area that overlaps the adhesive layer of the base film is bonded. A plurality of cut portions are formed from the side opposite to the agent layer side. The cut portion is preferably formed with a depth that does not reach the pressure-sensitive adhesive layer.

  In this wafer processing tape, only a portion of the base film that overlaps with the adhesive layer is formed with a dotted cut from the side opposite to the adhesive layer side of the base film. When the base film is evenly tensioned toward the outside in the plane direction by the expansion by forming the cut portion, the dotted cut portion is expanded into a circular shape so that the base film is cut into the cut portion. It can be pulled more easily than when there is no. Therefore, this wafer processing tape can improve the severability of the semiconductor wafer and the adhesive layer during expansion.

  Moreover, it is preferable that as many cuts as possible be processed into the base film overlapping the adhesive layer. In this case, since the base film can be pulled more easily, the division property of the semiconductor wafer and the adhesive layer can be improved. However, when there are too many cut portions, the base film may be torn during expansion.

  Moreover, it is preferable that the cut | notch part does not penetrate the base film. When penetrating the base film, the base film may be torn during expansion.

  Moreover, it is preferable that 0 <d / a ≦ 0.7 is satisfied, where a is the thickness of the base film and d is the depth of the cut portion. By satisfying this condition, it is possible to sufficiently exhibit the action of the cut portion.

  The method for manufacturing a wafer processing tape according to the present invention is a method for manufacturing a wafer processing tape that is used by being affixed to a wafer ring during processing of a semiconductor wafer, the peeling base material forming the base of the tape, and the semiconductor A first preparation step of preparing an adhesive film composed of an adhesive layer provided on one surface side of the release substrate corresponding to the planar shape of the wafer; provided on the one surface side of the substrate film and the substrate film; In the second preparation step of preparing a pressure-sensitive adhesive film composed of a pressure-sensitive adhesive layer, and in the pressure-sensitive adhesive layer and the base film, the adhesive layer of the base film on the portion of the base film that overlaps the adhesive layer A cutting step of forming a cut portion from the side opposite to the side, and a bonding step of bonding the adhesive film and the pressure-sensitive adhesive film together with the adhesive layer and the pressure-sensitive adhesive layer facing each other. That.

  In the cutting process, it is preferable to form a plurality of cutting portions. In this case, the dividing property between the semiconductor wafer and the adhesive layer can be further improved during expansion.

  Moreover, it is preferable to form a notch part so that a base film may not be penetrated in a notch process. When penetrating the base film, the base film may be torn during expansion.

  Further, in the cutting step, when the thickness of the film base is a and the depth of the cutting portion is d, the cutting portion is formed so as to satisfy 0 <d / a ≦ 0.7. preferable. By satisfying this condition, it is possible to sufficiently exhibit the action of the cut portion.

  According to the present invention, the semiconductor wafer and the adhesive layer can be easily divided at the time of expansion.

It is a top view which shows one Embodiment of the tape for wafer processing which concerns on this invention. It is the II-II sectional view taken on the line in FIG. It is a figure which shows the attachment method of the tape for wafer processing to a wafer ring. It is the III-III sectional view taken on the line in FIG. It is a figure which shows the state which has modified | denatured the semiconductor wafer with the laser beam. It is a figure which shows the state which set | placed the semiconductor wafer on the cooling stage. It is a figure which shows the state which expanded the semiconductor wafer.

  Hereinafter, preferred embodiments of a wafer processing tape, a wafer processing tape manufacturing method, and a semiconductor device manufacturing method using the same according to the present invention will be described in detail with reference to the drawings.

[Configuration of wafer processing tape]
FIG. 1 is a plan view showing an embodiment of a wafer processing tape according to the present invention. 2 is a cross-sectional view taken along line II-II in FIG. A wafer processing tape 1 shown in FIGS. 1 and 2 is a long tape used for dicing a semiconductor wafer and die bonding of a semiconductor chip obtained by dicing, for example, and is usually wound in a roll shape. It has become.

  As shown in the figure, the wafer processing tape 1 has been pre-cut, and has a separation base 2 that forms the base of the tape and a predetermined distance on one side of the separation base 2 corresponding to the shape of the semiconductor wafer. The adhesive layer 3 provided in a circle, the adhesive layer 4 provided in a circle so as to cover the adhesive layer 3, and the base provided in the same shape as the adhesive layer 4 so as to cover the adhesive layer 4 The material film 5 is comprised. On both edges in the width direction of the peeling substrate 2, there are provided bank portions 6 arranged at a predetermined interval from the circular pressure-sensitive adhesive layer 4 and the substrate film 5. The bank portion 6 is formed when the pressure-sensitive adhesive layer 4 and the base film 5 are precut. In addition, the peeling base material 2 and the adhesive layer 3 are formed with the below-mentioned adhesive film 9, and the base film 5 and the adhesive layer 4 are formed with the below-mentioned adhesive film 8.

  The depth of the cut portion 7 is preferably a depth that does not penetrate the base film 5. When the thickness a of the base film 5 and the depth of the cut portion 7 are d, 0 < More preferably, d / a ≦ 0.7 is satisfied. In addition, although the number of arrangement | sequences of the notch part 7 is not specifically limited, For example, it is preferable to arrange with 0.1-1.0 mm space | interval.

[Fabrication of semiconductor devices]
When a semiconductor device is manufactured using the wafer processing tape 1 as described above, first, the peeling substrate 2 is peeled from the wafer processing tape 1 to obtain a film laminate 13. Next, the film laminate 13 is fixed to one surface side of the semiconductor wafer 11 through the adhesive layer 3 exposed by the peeling of the peeling substrate 2. Further, as shown in FIGS. 3 and 4, the wafer ring 10 is fixed to the film laminate 13 through the adhesive layer 4.

  Next, as shown in FIG. 5, the laser beam 15 is output from the laser output device 14 to the semiconductor wafer 11, and the semiconductor wafer is modified into a lattice shape.

  Next, as shown in FIG. 6, it mounts on the cooling stage 12 whose surface temperature is 0 degrees C or less. After the wafer processing tape 1 is cooled to a temperature equivalent to the cooling stage, as shown in FIG. 7, with the position of the cooling stage 12 fixed, the wafer ring 10 portion is 10 mm or more at a speed of 200 mm / second or more, Lower. By lowering the wafer ring 10 at a stretch, the wafer processing tape 1 is pulled outward, and the semiconductor wafer 11 and the adhesive layer 3 are divided along the lattice shape of the semiconductor wafer 11 modified by the laser beam 15. The After dividing the semiconductor wafer 11 and the adhesive layer 3, the adhesive layer 4 is irradiated with high energy rays to reduce the adhesive force, and the semiconductor chip with the adhesive layer 3 is picked up from the base film 5. Thereafter, the semiconductor device is obtained by bonding the semiconductor chip to a predetermined support member via the adhesive layer 3.

[Production of tape for wafer processing]
In producing the wafer processing tape 1, for example, Hitachi Chemical Co., Ltd. product name: SD-3004 is prepared as the adhesive film 8 including the adhesive layer 4 and the base film 5. Moreover, as the adhesive film 9 which consists of the adhesive bond layer 3 and the peeling base material 2, the Hitachi Chemical Industries Ltd. make and brand name: HS-270 series are prepared, for example. Next, the adhesive film 9 is adjusted so that the depth of cut into the release substrate 2 is 20 μm or less, and circular precut processing with a diameter of 320 mm is performed, and unnecessary portions of the adhesive layer 3 are removed. Thereafter, the pressure-sensitive adhesive layer 4 and the pressure-sensitive adhesive layer 3 face each other, and the adhesive film 9 and the pressure-sensitive adhesive film 8 are attached under the conditions of room temperature, linear pressure of 1 kg / cm, and speed of 0.5 m / min. Then, the adhesive film 8 is adjusted so that the depth of cut into the release substrate 2 is 20 μm or less, and circular pre-cut processing with a diameter of 390 mm concentrically with the adhesive layer 3 is performed. Unnecessary portions of the material film 5 are removed to form the bank portion 6. By pre-cutting the adhesive film 8, the wafer processing tape 1 is obtained.

[Tension evaluation]
With respect to the wafer processing tape 1 (Example) obtained by the above-described manufacturing method, a wafer processing tape (Comparative Example) in which the cut portion 7 is not formed was separately manufactured. And the test piece A which cut off the rectangular area | region of width 10mm and length 50mm including the notch part 7 from the tape of an Example, and peeled the peeling base material 2 was produced. Moreover, the test piece B which cut off the part which does not contain the notch part 7 similarly from the tape of an Example, and peeled off the peeling base material was produced. Similarly, an area equivalent to that of the example was cut out from the tape of the comparative example, and a test piece was prepared by peeling off the peeling substrate 2.

  And about the above-mentioned test piece, when 180 degree tensile strength measurement (measuring temperature -10 degree C, chuck | zipper space | interval 10mm, tensile speed 200mm / sec) was performed and the tensile strength after 2 second was compared, the test of an Example In the specimen, the ratio of the tensile strength of the specimen A to the tensile strength of the specimen B was 0.9, whereas the ratio of the specimen of the comparative example was 1.0. Therefore, it was confirmed that the formation of the cut portion 7 contributes to improvement in breakability when the wafer processing tape 1 is cooled and expanded.

DESCRIPTION OF SYMBOLS 1 ... Wafer processing tape, 2 ... Peeling base material, 3 ... Adhesive layer, 4 ... Adhesive layer, 5 ... Base film, 6 ... Bank part, 7 ... Cut part, 8 ... Adhesive film, 9 ... Adhesion Film: 10 ... Wafer ring, 11 ... Semiconductor wafer, 12 ... Cooling stage, 13 ... Film laminate, 14 ... Laser output device, 15 ... Laser light

Claims (6)

  A wafer processing tape that is used by being affixed to a wafer ring when processing a semiconductor wafer, and is provided on one surface side of the release substrate corresponding to a planar shape of the semiconductor wafer and a base shape of the semiconductor wafer. An adhesive layer, an adhesive layer provided so as to cover the adhesive layer, and a base film provided so as to cover the adhesive layer, the adhesive layer and the base film Is a region that sticks to the wafer ring, and a region that overlaps the adhesive layer of the base film is opposite to the adhesive layer side. Wafer processing tape with a plurality of cuts formed from the side.   The wafer cutting tape according to claim 1, wherein the cut portion does not penetrate the base film.   The wafer processing tape according to claim 1 or 2, wherein 0 <d / a ≦ 0.7 is satisfied, where a is a thickness of the base film and d is a depth of the cut portion.   A method for manufacturing a wafer processing tape that is used by being affixed to a wafer ring during processing of a semiconductor wafer, the release base forming the base of the tape, and one side of the release base corresponding to the planar shape of the semiconductor wafer A first preparation step of preparing an adhesive film comprising an adhesive layer provided on the substrate, and a second preparation for preparing an adhesive film comprising a base film and an adhesive layer provided on one side of the base film A step of forming a cut portion from the surface opposite to the adhesive layer side of the base film in the portion of the base film that overlaps the adhesive layer in the adhesive film, and the adhesive layer And a bonding step of bonding the adhesive film and the pressure-sensitive adhesive film with the pressure-sensitive adhesive layer facing each other and a method for producing a wafer processing tape.   The manufacturing method of the tape for wafer processing of Claim 4 which forms the said notch part so that the said base film may not be penetrated in the said notch process.   In the cutting step, when the thickness of the base film is a and the depth of the cutting portion is d, the cutting portion is formed so as to satisfy 0 <d / a ≦ 0.7. The manufacturing method of the tape for wafer processing of Claim 4 or Claim 5.

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