JP2013152952A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To resolve the problems that it is difficult for a conventional semiconductor device to suppress increase in temperature in a semiconductor device, and that provision of a pipe and the like in which cooling medium flows in the semiconductor device causes increase in size of the semiconductor device.SOLUTION: An N-type semiconductor and a P-type semiconductor are laminated in an axial direction of a cylindrical outer package. By setting an outer diameter of one of the N-type semiconductor and the P-type semiconductor to be larger than an inner diameter of the outer package, the N-type semiconductor or the P-type semiconductor tightly contacts with the outer package. Thereby, heat transfer in the semiconductor can be improved, and increase in temperature of the semiconductor device can be suppressed.

Description

  The present invention relates to a cooling structure for a battery or a semiconductor device.

  Various types of batteries such as cylindrical batteries and prismatic batteries have been developed and widely used as storage batteries. In addition, a cylindrical type is adopted for a relatively small capacity battery from the viewpoint of pressure resistance and ease of sealing, and a square type is adopted for a relatively large capacity battery for ease of handling.

  If attention is paid to the electrode structure of the storage battery, two types, a stacked type and a wound type, are widely used. That is, in a stacked battery, an electrode group in which positive and negative electrodes are alternately stacked via separators is housed in a battery case. Many of the stacked type batteries have a rectangular battery case. On the other hand, a wound type battery is housed in a battery case in a state in which a positive electrode and a negative electrode are wound in a spiral shape with a separator interposed therebetween. The wound type battery case may be a cylindrical type or a square type.

  Patent Document 1 and Patent Document 2 disclose techniques related to a cylindrical wound battery. That is, in FIG. 1, the storage battery 1 includes a positive electrode 3, a negative electrode 4, a separator 5, and an electrolytic solution disposed in a battery case 2 as main components. The battery case 2 is a substantially cylindrical container having an opening 2a in the upper portion, and the bottom surface portion serves as a negative electrode terminal. The strip-like positive electrode 3 and the negative electrode 4 are accommodated in the battery case 2 in a state of being wound in a spiral while sandwiching the separator 5 therebetween. Further, the opening 2 a of the battery case is sealed in a liquid-tight manner by the sealing plate 7 in a state where the electrolytic solution is injected into the battery case 2. The cap 6 provided on the upper surface of the sealing plate 7 serves as a positive electrode terminal. The positive electrode terminal is connected to the positive electrode 3 by a lead wire (not shown).

  Various methods for cooling the storage battery have been proposed. Most of them relate to an assembled battery obtained by combining a plurality of storage batteries into a module. This is because when the storage battery is modularized to increase the capacity, the temperature rise of the storage battery becomes a problem. As for the cooling structure of the assembled battery, a method of providing a protrusion on the surface of the container that houses the assembled battery to cause disturbance in the flow of cooling air to improve heat dissipation (for example, Patent Document 3), between adjacent assembled batteries A method of providing a cooling air passage by interposing a metal cooling plate with holes (for example, Patent Documents 3 and 4) or a method of providing cooling fins protruding outside the storage container (for example, Patent Document 5) Has been proposed.

In Patent Document 6, in a prismatic laminated battery unit in which a separator is interposed between a positive electrode and a negative electrode, a cooling plate is provided between the battery units, and a battery flow path is provided on the cooling plate. A cooling structure for a laminate is disclosed.
Patent Document 7 discloses an invention of a cylindrical wound battery in which a sheet-shaped heat sink is disposed on a positive electrode and a negative electrode and wound together with a separator.

JP 2002-198044 A JP 2004-103350 A JP 2009-016285 A JP 2003-007355 A JP 2001-143769 A International Publication No. 2008/099609 Japanese Patent Laid-Open No. 11-144771

Supervised by Hideo Tamura “Functional Chemistry Series of Electrons and Ions Vol.1 All about Nickel Metal Hydride Batteries” published by NTS 2005

  A separator that is one of the components of a battery has a role of preventing short circuit between the positive electrode and the negative electrode, holding the electrolyte and conducting ionic conduction between the positive electrode and the negative electrode. Polyamide is an important part for the battery. Since a nonwoven fabric of synthetic fibers such as fibers or polyolefin fibers is used as a material, its thermal conductivity is small compared to positive electrodes and negative electrodes (hereinafter collectively referred to as electrodes), and it is difficult to transfer heat.

  Referring to the wound battery cooling structure shown in FIG. 1, the heat generated inside the battery needs to be dissipated from the battery case. However, the wound battery has multiple electrodes and separators stacked thereon. It is difficult to transfer heat well through separators stacked in multiple layers. FIG. 2 is a schematic diagram for explaining the state of the temperature gradient inside the battery from the battery surface (case) toward the center. According to FIG. 2, in the case of the cylindrical wound battery, the case and the electrode have a high thermal conductivity, so that a large temperature gradient does not occur. However, the separator has a low thermal conductivity, and thus a large temperature gradient is generated. For this reason, it turns out that it becomes high temperature, so that it goes to a center part.

  That is, although the surface temperature of the battery case of the wound battery is close to the ambient temperature, the temperature of the central portion is high, and particularly in the charge / discharge state, the temperature is considerably high. Even if the outside of the battery case is cooled, the inside of the battery is not cooled to a necessary level and becomes high temperature. The electrode stops working when the temperature rises. Generally, in a hydrogen storage alloy used in a storage battery (for example, a misch metal alloy or a lanthanum / nickel alloy), the battery is not charged at 60 ° C. or higher.

  As a method of cooling the battery, a method of providing protrusions on the surface of the battery case to improve heat dissipation (for example, Patent Document 3), a perforated metal plate is provided between the assembled batteries and cooled by flowing cooling air. A method (for example, Patent Documents 3 and 4) or a method for providing a cooling fin (for example, Patent Document 5) has been proposed, but these are effective for cooling the surface of the battery case, Therefore, an effective cooling method cannot be used for a wound battery.

  A method of winding a heat sink together with an electrode (for example, Patent Document 7) and a method of storing a pipe through which cooling water flows in the battery have been proposed. These methods may be said to be more effective cooling methods than cooling the surface of the battery case, but require a space for cooling, increase the battery size, and decrease the electric capacity per volume.

  In general, an alkaline storage battery employs positive electrode regulation for hermetic sealing, and requires more negative electrodes than a positive electrode. For example, a hydrogen storage alloy that is a rare metal is used for the negative electrode of a nickel metal hydride battery, which is expensive and has a problem of stable supply of raw materials. The cost of the negative electrode is said to occupy 80% of the entire electrode, and the negative electrode has a large effect on the battery price.

  The present invention has been made in view of the above circumstances, and suppresses the temperature rise inside the battery and inside the semiconductor device, and does not require extra space inside the battery and inside the semiconductor device for cooling. This is a problem to be solved. Furthermore, the battery price is reduced by reducing the cost of the negative electrode, which greatly affects the battery price.

  The semiconductor device according to the present invention is a semiconductor device comprising a plurality of N-type semiconductors and P-type semiconductors, wherein the semiconductor is laminated in the axial direction of the exterior body inside a cylindrical exterior body, A conductive current collector having a passage for flowing through the semiconductor in the axial direction of the exterior body.

In the semiconductor device according to the present invention, an emitter layer, a collector layer, and a base layer are laminated in the inner axial direction of the outer package, and the emitter layer is one of the P-type semiconductor and the N-type semiconductor. On the other hand, the base layer is sandwiched between the emitter layer and the collector layer, and is a semiconductor of a different type from the emitter layer, and the collector layer is a semiconductor of the same type as the emitter layer, the emitter layer Any one of the layer, the collector layer, and the base layer is a first layer that is in contact with and electrically connected to the inner surface of the exterior body, and the other is a second layer that is not in contact with the exterior body and the second layer The first and second current collectors, which are three layers and are electrically conductive, pass through the first layer, the second layer, and the third layer in the axial direction of the exterior body, The first current collector is the front The second current collector is in contact with and electrically connected to the second layer and is not in contact with the first layer and the third layer, and the second current collector is in contact with the third layer and electrically It is preferable that the first layer and the second layer are not in contact with each other.
In this configuration, the emitter is an N-type or P-type semiconductor, the base is an N-type or P-type semiconductor, and is a semiconductor of a different type from the emitter (P-type if the emitter is N-type), and the collector Is an N-type or P-type semiconductor and is the same type as the emitter. Thereby, an NPN transistor or a PNP transistor is formed. An example of the combination is shown in Table 1.

  In the semiconductor device according to the present invention, an N-type semiconductor and a P-type semiconductor are stacked in the inner axial direction of the outer package, and one of the N-type semiconductor and the P-type semiconductor is the outer package. Although it is in contact with the inner surface of the body and is electrically connected, it is not in contact with the current collector, and the other semiconductor is in contact with and electrically connected to the current collector. It is preferable not to contact the inner surface of the exterior body.

  The present invention makes it possible to suppress an increase in temperature inside a semiconductor device without requiring extra space for cooling.

It is the schematic perspective view which fractured | ruptured some cylindrical laminated batteries. It is a figure which shows typically the condition of the temperature gradient of a cylindrical winding battery. It is a schematic block diagram which shows the transistor which concerns on 1st embodiment. It is a schematic block diagram which shows the diode which concerns on 2nd embodiment.

  Hereinafter, embodiments according to the present invention will be described with reference to the drawings. However, the present invention is not limited to the embodiments.

<First embodiment>
FIG. 3 is a schematic configuration diagram showing a transistor according to the first embodiment of the present invention. A transistor 180 illustrated in FIG. 3 includes an exterior body, a current collector, and a semiconductor housed in the exterior body as main components. The exterior body 181 includes a circular pipe 182 and a disk-shaped lid member 186 attached to the opening 182c of the circular pipe 182. The circular pipe 182 and the lid member 186 are made of iron, but may be other metals. The outer diameter of the lid member 186 is slightly larger than the inner diameter of the opening 182c of the circular pipe 182, and the lid member 186 is tightly fitted in the circular pipe opening 182c after the semiconductors 183, 184, 185 are accommodated.

  The semiconductors 183, 184, and 185 are stacked in the axial direction of the circular pipe 182 (X direction in FIG. 3) and housed in the exterior body 181. Each of the semiconductor 183, the semiconductor 185, and the semiconductor 184 has a disk shape with two holes. The outer diameter of the semiconductor 183 is larger than the inner diameter of the circular tube 182, the outer edge 183 c of the semiconductor 183 is in contact with the inner surface 182 a of the circular tube 182, and the semiconductor 183 is electrically connected to the circular tube 182 (see FIG. 3 (b)). On the other hand, the outer diameters of the semiconductor 184 and the semiconductor 185 are smaller than the inner diameter of the circular pipe 182, and the semiconductors 184 and 185 are not in contact with the circular pipe 182.

  Each of the two rod-shaped current collectors 187 and 189 is made of a conductive material in which nickel is plated on iron, and ends 187b and 187b located at both ends of the shafts 187a and 189a and 189a, 189b. By applying nickel plating, the electrical resistance at the contact surface can be reduced. The shaft portions 187a and 189a of the current collectors 187 and 189 penetrate the semiconductors 183, 184 and 185 in the axial direction of the exterior body 181 (X direction in FIG. 3). Since the outer diameters of the shaft portions 187 a and 189 a are both smaller than the diameters of the holes 183 a and 183 b provided in the semiconductor 183, the semiconductor 183 is not in contact with the current collectors 187 and 189. Electrically insulated.

  On the other hand, the outer diameter of the shaft portion 187a is larger than the diameter of the hole 184a provided in the semiconductor 184, and the current collector 187 is in contact with the peripheral portion of the semiconductor hole 184a. The semiconductor 184 and the current collector 187 are electrically connected. The outer diameter of the shaft portion 187 a is smaller than the diameter of the hole 185 a provided in the semiconductor 185 and is not in contact with the semiconductor 185. The semiconductor 185 and the current collector 187 are electrically insulated. Further, the outer diameter of the shaft portion 189 a is smaller than the diameter of the hole 184 b provided in the semiconductor 184, and the current collector 189 is not in contact with the semiconductor 184. The semiconductor 184 and the current collector 189 are electrically insulated. Further, since the outer diameter of the shaft portion 189a is larger than the diameter of the hole 185b provided in the semiconductor 185, the current collector 189 is in contact with the peripheral portion of the semiconductor hole 185b. The semiconductor 185 and the current collector 189 are electrically connected.

  The end portions 187b and 189b of the current collector pass through holes provided in the lid member and project outward from the transistor 180 to function as a base terminal 187b and a collector terminal 189b, respectively. The circular tube 182 functions as an emitter terminal. In order to prevent the base terminal 187b, the collector terminal 189b, and the circular pipe 182 from being electrically connected to each other via the lid member 186 and short-circuited, the base terminal 187b, the collector terminal 189b, and the lid member 186 are not connected. An insulating material 188 is provided. The transistor 180 functions as a transistor having a collector terminal 189b as a collector, a base terminal 187b as a base, and a circular tube as an emitter. Further, the heat generated in the semiconductor 183 is directly transmitted to the circular tube 182, and the heat generated in the semiconductors 184 and 185 is transmitted to the circular tube 182 through the semiconductor 183, so that the temperature rise of the semiconductors 183, 184 and 185 is suppressed. Is done.

In this embodiment, the semiconductor 183 and the semiconductor 185 may be N-type semiconductors, the semiconductor 184 may be a P-type semiconductor, the semiconductor 183 and the semiconductor 185 may be P-type semiconductors, and the semiconductor 184 may be an N-type semiconductor. The former is an NPN transistor, and the latter is a PNP transistor.
<Second embodiment>

  FIG. 4 is a schematic configuration diagram showing a diode according to the second embodiment of the present invention. A diode 191 shown in FIG. 4 includes an exterior body, a current collector, and a semiconductor housed in the exterior body as main components. The exterior body 195 includes a circular tube 192 and a disk-shaped lid member 196 attached to the opening 192c of the circular tube 192. The circular tube 192 and the lid member 196 are made of iron, but may be other metals. The outer diameter of the lid member 196 is slightly larger than the inner diameter of the opening 192c of the circular tube 192, and the lid member 196 is tightly fitted in the circular tube opening 192c after the semiconductors 193 and 194 are stored.

  The semiconductors 193 and 194 are stacked in the axial direction (X direction in FIG. 4) of the circular tube 192 and housed inside the exterior body 195. Each of the semiconductor 193 and the semiconductor 194 has a disk shape with a hole in the center. The outer diameter of the semiconductor 193 is larger than the inner diameter of the circular tube 192, and the outer edge portion 193 b of the semiconductor is in contact with the inner surface 192 a of the circular tube 192. The semiconductor 193 and the circular tube 192 are electrically connected. On the other hand, the outer diameter of the semiconductor 194 is smaller than the inner diameter of the circular tube 192, and the outer edge portion 194b of the semiconductor is not in contact with the inner surface 192a of the circular tube.

  The current collector 197 is made of a circular tube made of a conductive material in which nickel is plated on iron. The current collector 197 has a central portion 197a inside the exterior body 195 and an end portion 197b outside the exterior body 195. Yes. By applying nickel plating, the electrical resistance at the contact surface can be reduced. The central portion 197a of the current collector 197 penetrates the semiconductors 193 and 194 in the axial direction of the exterior body 195 (X direction in FIG. 4).

  Since the outer diameter of the central portion 197 a is smaller than the diameter of the hole 193 a provided in the semiconductor 193, the peripheral portion of the semiconductor hole 193 a is not in contact with the current collector 197. The semiconductor 193 and the current collector 197 are electrically insulated. On the other hand, since the outer diameter of the central portion 197a is larger than the diameter of the hole 194a provided in the semiconductor 194, the current collector 197 is in contact with the peripheral edge portion of the semiconductor hole 194a. The semiconductor 193 and the current collector 197 are electrically connected.

  The semiconductor 193 is composed of a P-type semiconductor, and the semiconductor 194 is composed of an N-type semiconductor. An end 197b of the current collector passes through a hole provided in the lid member and protrudes outward from the diode 191 to function as a cathode terminal 197b. The circular tube 192 functions as an anode terminal. An insulating material 198 is provided between the current collector 197 and the lid member 196 in order to prevent the current collector 197 and the circular tube 192 from being electrically connected to each other via the lid member 196 and being short-circuited. ing.

  Inside the current collector 197 formed of a circular pipe, a passage for flowing a refrigerant is formed. Heat generated in the semiconductor 193 is transmitted to the circular tube 192, and heat generated in the semiconductor 194 is transmitted to the current collector 197. By cooling the circular tube 192 and the current collector 197 with cooling air or the like, the temperature rise of the semiconductor is suppressed.

  In this embodiment, the semiconductor 193 is configured by a P-type semiconductor and the semiconductor 194 is configured by an N-type semiconductor. However, the semiconductor 193 may be configured by an N-type semiconductor and the semiconductor 194 may be configured by a P-type semiconductor. In this case, the end 197b of the current collector functions as an anode terminal, and the circular tube 192 functions as a cathode terminal.

  The semiconductor device according to the present invention can be suitably used as a semiconductor device not only for industrial use but also for consumer use.

DESCRIPTION OF SYMBOLS 1 Storage battery 2 Battery case 3 Positive electrode 4 Negative electrode 5 Separator 6 Cap 7 Sealing plate 180 Transistor 181 Exterior body 182 Circular pipe 183, 184, 185 Semiconductor 186 Lid member 187 Current collector 188 Insulating material 189 Current collector 191 Diode 192 Circular pipe 193 , 194 Semiconductor 195 Exterior body 196 Lid member 197 Current collector 198 Insulating material

Claims (3)

In a semiconductor device comprising a plurality of N-type semiconductors and P-type semiconductors,
Inside the cylindrical exterior body, the semiconductor is laminated in the axial direction of the exterior body,
A semiconductor device in which a conductive current collector having a passage for flowing a refrigerant penetrates the semiconductor in an axial direction of the outer package. An emitter layer, a collector layer, and a base layer are laminated in the inner axial direction of the exterior body,
The emitter layer is one of the P-type semiconductor and the N-type semiconductor,
The base layer is sandwiched between the emitter layer and the collector layer, and is a semiconductor of a different type from the emitter layer,
The collector layer is a semiconductor of the same type as the emitter layer;
Any one of the emitter layer, the collector layer, and the base layer is a first layer that is in contact with and electrically connected to the inner surface of the exterior body,
The second and third layers are not in contact with the exterior body, and
The conductive first current collector and the second current collector pass through the first layer, the second layer, and the third layer in the axial direction of the exterior body,
The first current collector is in contact with and electrically connected to the second layer, and is not in contact with the first layer and the third layer;
The semiconductor device according to claim 1, wherein the second current collector is in contact with and electrically connected to the third layer, and is not in contact with the first layer and the second layer. An N-type semiconductor and a P-type semiconductor are stacked in the inner axial direction of the exterior body,
One of the N-type semiconductor and the P-type semiconductor is in contact with and electrically connected to the inner surface of the outer package, but is not in contact with the current collector, and the other semiconductor. The semiconductor device according to claim 1, wherein is in contact with and electrically connected to the current collector, but not in contact with the inner surface of the exterior body.

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