JP2013140775A - Jig for static elimination and substrate processing device using the same, and static elimination method for substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a jig for static elimination by which quick static elimination of respective members of a substrate processing device can be performed by a simple method, and to provide a static elimination method using the same.SOLUTION: A wafer J for static elimination can be transported by a transportation mechanism of a substrate processing device 1, has a substrate shape capable of being mounted in each processing module, and includes: an ion generation electrode 51 that is configured by a discharge electrode 501, a dielectric electrode 502, and a dielectric body 503 sandwiched between the discharge electrode 501 and the dielectric electrode 502; and a high-voltage power supply circuit 53a and a battery 53b applying a voltage to the discharge electrode 501 and the dielectric electrode 502. Static elimination of the respective members of the substrate processing device 1 is performed by ions generated from the ion generating electrode 51.

Description

  The present invention relates to a static elimination jig for neutralizing each member of a charged substrate processing apparatus and floating particles, a substrate processing apparatus using the same, and a static elimination method for each member of the substrate processing apparatus.

  In the semiconductor manufacturing process, for example, a photolithography process is performed in which a photoresist is applied on a substrate such as a semiconductor wafer, the resist film is exposed according to a predetermined circuit pattern, and developed to form a circuit pattern. . In this photolithography process, a substrate processing apparatus in which an exposure apparatus is connected to a coating and developing processing apparatus is usually used.

  Substrate processing devices such as coating and developing processing devices are used during start-up and maintenance, for example, when replacing a cup of a liquid processing module, a heat processing plate of a heat processing module, or performing fine adjustment of each member such as a chemical solution discharge nozzle. In some cases, each member may be charged when the operator's hand touches each member. When each member of the substrate processing apparatus is charged, it becomes difficult to properly perform the semiconductor manufacturing process, for example, the chemical liquid is not normally discharged from the chemical liquid discharge nozzle. In addition, there is a problem that particles brought into the apparatus due to work do not easily converge even if aging processing is performed.

  For this reason, it is required to neutralize each member and floating particles of the substrate processing apparatus. Conventionally, as a method of discharging a member, as described in Patent Document 1, for example, it has been considered to release static electricity from a charged member by covering the member with a conductive coating.

  Further, conventionally, after the maintenance is completed, an operator removes static electricity by using a static eliminator as described in Patent Document 2 for each of the members and for the space of the path through which the substrate is conveyed. Had gone. This static eliminator combines an ion generating element composed of a discharge electrode, a dielectric electrode and a dielectric film sandwiched therebetween, and an airflow generating apparatus for transporting ions generated by the ion generating element to a static elimination target portion. It is comprised by.

JP 2001-332465 A (Claims, FIG. 2) JP 2006-196291 A (Claims, FIG. 1)

  However, in the method described in Patent Document 1, it is necessary to coat each member with a conductive film for charge removal, which is not desirable from the viewpoint of cost.

  In addition, when the operator performs static elimination on each of the members, and on the space of the normal substrate transport path, using the static elimination device as described in Patent Document 2, Even during recovery, an operator has to enter the apparatus, which makes the work complicated and requires a lot of time for recovery after start-up and maintenance.

  Furthermore, when a static eliminator as described in Patent Document 2 is permanently installed at a plurality of locations in the substrate processing apparatus, it is not desirable from the viewpoint of installation space restrictions and cost. In addition, the static eliminator described in Patent Document 2 is periodically used, for example, by cleaning the electrode part having the electrode needle or replacing the electrode part having the electrode needle every several years at a frequency of several weeks to several months. When maintenance is required and it is permanently installed in the substrate processing apparatus, it is necessary to enter the apparatus for cleaning or replacement of the electrode part having the electrode needle, and productivity due to an increase in the amount of particles in the apparatus, etc. Bring about a decline.

  The present invention has been made in view of the above circumstances, and a static elimination jig capable of quickly eliminating static electricity from each member of a substrate processing apparatus by a simple method, and a substrate processing apparatus and a processing apparatus using the same. It aims at providing the static elimination method.

  In order to solve the above problem, the static elimination jig of the present invention is a jig for neutralizing each member and floating particles of the substrate processing apparatus, and can be transported by the transport mechanism of the substrate processing apparatus, and An ion generating electrode having a substrate shape that can be placed in each processing module and comprising a discharge electrode, a dielectric electrode, and a dielectric sandwiched between the discharge electrode and the dielectric electrode; and the discharge electrode And a high-voltage power supply circuit that applies a voltage to the dielectric electrode, and a battery that supplies energy to the high-voltage power supply circuit (claim 1).

  The static elimination jig according to the present invention preferably includes an air flow forming portion that forms an air flow for carrying ions generated by the ion generating electrode to each member of the substrate processing apparatus.

  Further, the static elimination jig according to the present invention may be provided with an air flow guide hole for guiding an air flow for carrying ions generated by the ion generating electrode to each member of the substrate processing apparatus.

  The airflow induction holes are through holes that penetrate from the front surface to the back surface of the static elimination jig, and a plurality of the airflow induction holes are preferably disposed adjacent to the discharge electrode of the ion generating electrode.

  The air flow forming portion of the static elimination jig according to the present invention is configured by a wall portion protruding from the front or back surface of the static elimination jig, and the wall portion extends in a radial direction of the static elimination jig, Preferably, the ion generating electrode is disposed adjacent to the discharge electrode. Furthermore, it is preferable that a plurality of the air flow forming portions are provided on at least the front surface or the back surface of the static elimination jig, and the air flow forming portions are arranged at equal intervals.

  Moreover, it is preferable that the static elimination jig according to the present invention includes a gas ejection portion that ejects a gas for transporting ions generated by the ion generation electrode to each member of the substrate processing apparatus.

  Moreover, it is preferable that the static elimination jig according to the present invention is provided with an airflow direction changing plate for changing the flow direction of the gas ejected from the gas ejection part on the upper part of the gas ejection part.

  The gas ejection part is provided with a gap between the static elimination jig, a housing having a gas suction port on the lower surface and a gas ejection port on the upper surface, and the gas suction port in the housing. A piezoelectric micro blower disposed through a passage communicating with the gas jet port, wherein the piezoelectric micro blower has a blower body having a discharge port on an upper surface, and an outer peripheral portion fixed to the blower body. A diaphragm; a piezoelectric element fixed on the surface of the diaphragm; a blower chamber formed between the blower body and the diaphragm; and a power supply circuit for applying a voltage to the piezoelectric element. By applying a voltage to the element to drive the diaphragm to resonate, the gas is induced by the gas discharged from the discharge port, and the gas sucked from the gas suction port is ejected from the gas ejection port. Preferred is (claim 9).

  The discharge electrode, the dielectric electrode, and the dielectric of the ion generating electrode of the static elimination jig according to the present invention may be formed by a photolithography process (claim 10).

  Further, in the static elimination jig according to the present invention, the ion generating electrode may be provided on the back side of the static elimination jig, and the battery may be provided on the front side of the static elimination jig.

  In addition, a substrate processing apparatus for performing neutralization of each member and floating particles using the static elimination jig according to the present invention includes a static elimination jig mounting portion for mounting the static elimination jig according to the present invention, and the static elimination A transport mechanism that removes and transports the jig from the static elimination jig mounting section, and the ionization jig generates ions from the static elimination jig when the static elimination jig is held on the transport mechanism. And a control unit that controls the static elimination jig (claim 12).

  Further, the substrate processing apparatus is characterized in that a charging unit for charging the battery provided in the static elimination jig is provided in a container having the static elimination jig mounting part. (Claim 13).

  In the present invention, the static elimination jig mounting portion is configured by a plate having a support pin for supporting the static elimination jig, and the static elimination jig provided on the plate is provided on the plate. A charging unit for charging the battery may be provided, and the charging unit may be configured to charge the battery in a non-contact manner by electromagnetic induction (claim 14).

  The substrate processing apparatus further includes a processing module including a substrate holding unit on which the static elimination jig transported by the transport mechanism is placed, and the static elimination treatment is performed on the substrate holding unit in the processing module. The static elimination jig is controlled by the control unit so that ions are generated from the static elimination jig when a tool is placed (claim 15).

  In addition, the method for neutralizing a substrate processing apparatus according to the present invention includes a step of taking out a static elimination jig for neutralizing each member of the substrate processing apparatus and floating particles from the static elimination jig storage module by a transport mechanism; A step of transporting a jig to each processing module of the substrate processing apparatus by the transport mechanism; and a step of generating ions from the static elimination jig in the transport step to neutralize the transport mechanism and floating particles. (Claim 16).

  In another static elimination method of the substrate processing apparatus according to the present invention, a static elimination jig for neutralizing each member and floating particles of the substrate processing apparatus by the transport mechanism can be freely rotated in one processing module of the substrate processing apparatus. A step of placing the substrate holding unit; a step of rotating the substrate holding unit to rotate the static elimination jig; and generating ions by the static elimination jig to each member in the one processing module; And a step of neutralizing floating particles.

  Furthermore, another method of neutralizing a substrate processing apparatus according to the present invention includes: a static elimination jig for neutralizing each member of the substrate processing apparatus and floating particles by a transport mechanism; and a substrate in one processing module of the substrate processing apparatus. A step of placing on the holding unit, a step of generating ions from the static elimination jig placed on the substrate holding unit, and an air flow for carrying the ions to each member in the processing module of the substrate processing apparatus And discharging each of the members and airborne particles (Claim 18).

  (1) According to the invention described in claims 1, 11 to 18, since static elimination is performed using a static elimination jig that can be conveyed by the conveyance mechanism of the substrate processing apparatus, it is the same as the normal conveyance of the wafer W. In addition, the static elimination jig can be transported by the transport mechanism in the substrate processing apparatus, and the static elimination work can be performed without an operator entering the apparatus. Therefore, the recovery time after the start-up and maintenance is completed can be greatly shortened. In addition, since each member and floating particles in the substrate processing apparatus can be neutralized with a single static elimination jig, a static elimination device or the like is attached to each member, or a static elimination device or the like is attached to all normal substrate transport paths. It is not necessary to attach a battery, and an increase in cost for static elimination can be avoided. Furthermore, when the static eliminator is attached to each member or all of the normal substrate transport path, it is necessary to clean or replace the electrode needle. In the present invention, this electrode is used even if the operator does not enter the apparatus. The needle can be cleaned or replaced.

  (2) According to the second to sixth aspects of the present invention, by removing the ion generated at the ion generating electrode of the static elimination jig by providing an air flow forming portion and / or an air flow guide hole in the static elimination jig It can be diffused around the tool or guided to the back side, and ions can be effectively transported to each member without providing a separate airflow generator.

  (3) According to the inventions described in claims 7 to 9, the gas generated by the ion generation electrode of the static elimination jig is ejected from the gas ejection part by providing the gas ejection part in the static elimination jig. Can be diffused to each member of the substrate processing apparatus using ions, so that ions can be carried to the member of the substrate processing apparatus separated from the ion generating electrode.

  (4) Further, according to the invention described in claim 10, the discharge electrode, dielectric electrode, and dielectric of the ion generating electrode can be formed by a photolithography process, and a static elimination jig is manufactured by a simple method. can do. Further, since the ion generating electrode is patterned on the static elimination jig, the static elimination jig can be reduced in weight, and the heavy burden on the transport mechanism and the processing module is reduced.

1 is a schematic plan view showing a coating and developing treatment apparatus using a static elimination jig according to the present invention. It is a schematic perspective view which shows the said application | coating development processing apparatus. It is a schematic longitudinal cross-sectional view (a) which shows the said coating and developing processing apparatus, and a schematic side view (b) which shows the charge state of the delivery part of the static elimination jig in a coating and developing processing apparatus. It is the schematic plan view (a) which shows the jig | tool for static elimination which concerns on 1st Embodiment of this invention, and its side view (b). It is the schematic of the ion generating electrode of the jig for static elimination which concerns on 1st Embodiment. It is a schematic perspective view of the conveyance mechanism in the said coating and developing processing apparatus. It is a schematic longitudinal cross-sectional view which shows the static elimination method with respect to the conveyance mechanism of the static elimination jig which concerns on 1st Embodiment of this invention in steps. It is a schematic longitudinal cross-sectional view of the liquid processing module of the said coating and developing processing apparatus. It is a schematic longitudinal cross-sectional view which shows the static elimination method with respect to the liquid processing module of the static elimination jig which concerns on this invention in steps. It is a schematic plan view of the heating / cooling processing module of the coating and developing treatment apparatus. It is a schematic longitudinal cross-sectional view which shows the static elimination method with respect to the heating / cooling process module of the static elimination jig which concerns on this invention in steps. It is the schematic sectional drawing (a) and the schematic bottom view (b) which show the static elimination jig which concerns on 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the other jig for static elimination which concerns on 2nd Embodiment of this invention. It is the schematic plan view (a) which shows the jig | tool for static elimination which concerns on 3rd Embodiment of this invention, and its side view (b). It is a schematic sectional drawing which shows the piezoelectric micro blower of the jig for static elimination which concerns on 3rd Embodiment. It is an operation | movement principle figure (a)-(c) of the piezoelectric micro blower of the jig for static elimination which concerns on 3rd Embodiment. It is the schematic plan view (a) which shows the jig | tool for static elimination which concerns on 4th Embodiment of this invention, and its side view (b).

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, the configuration of a coating and developing apparatus to which a static elimination wafer J as a static elimination jig according to the present invention is applied will be described.

  As shown in FIG. 1, a carrier block S1, a processing block S2, an interface block S3, and an exposure block S4 are connected to the coating and developing treatment apparatus 1 in this order from the carrier block S1 to the exposure block S4.

  In the carrier block S1, the transfer mechanism B takes out the wafer W from the sealed carrier 11 mounted on the mounting table 10 by the transfer arm 20, and transfers it to the processing block S2 adjacent to the carrier block S1. Further, the transfer mechanism B is configured to receive the wafer W after being processed in the processing block S <b> 2 and return it to the carrier 11.

  As shown in FIG. 2, the processing block S2 includes a first block (DEV layer) B1 for performing development processing and a second processing for forming an antireflection film formed on the lower layer side of the resist film. A block (BCT layer) B2, a third block (COT layer) B3 for applying a resist solution, and a fourth block for performing an antireflection film formed on the upper layer side of the resist film ( TCT layer) B4 is laminated in order from the bottom.

  The second block (BCT layer) B2 and the fourth block (TCT layer) B4 each include a liquid processing module 30 including three application portions for applying a chemical solution for forming an antireflection film by spin coating. And a heating / cooling processing module 40 for performing pre-processing and post-processing of the processing performed in the liquid processing module 30, the liquid processing module 30, and the heating / cooling processing module 40. Are provided with transfer mechanisms A2 and A4 which are substrate transfer means for transferring the wafer W between them (see FIG. 3).

  The third block (COT layer) B3 has the same configuration except that the chemical solution is a resist solution and a hydrophobic treatment unit is incorporated. On the other hand, for the first processing block (DEV layer) B1, for example, development units are stacked in two stages in one DEV layer B1. In the DEV layer B1, a common transport mechanism A1 for transporting the wafer W to these two development units is provided (see FIG. 3). Further, as shown in FIG. 1 and FIG. 3, the processing block S2 is provided with a shelf unit U5, and between each part of the shelf unit U5, a vertically movable transport mechanism E provided in the vicinity of the shelf unit U5. As a result, the wafer W is transferred.

  On the other hand, in the upper part of the DEV layer B1, a shuttle arm F which is a dedicated transfer means for directly transferring the wafer W from the transfer unit CPL11 provided in the shelf unit U5 to the transfer unit CPL12 provided in the shelf unit U6. Is provided (see FIG. 3). The wafer W on which the resist film and further the antireflection film are formed is transferred to the transfer unit CPL11 via the transfer unit BF3 and TRS4 by the transfer mechanism E, and from here to the transfer unit CPL12 of the shelf unit U6 directly by the shuttle arm F. It is conveyed and taken into the interface block S3.

  Next, the wafer W is transferred to the exposure apparatus S4 by the interface arm G, and after performing a predetermined exposure process, it is placed on the transfer unit TRS6 of the shelf unit U6 and returned to the processing block S2. The returned wafer W is developed in the first block (DEV layer) B1, and transferred to the transfer unit TRS3 by the transfer mechanism A1 serving as the substrate transfer means (see FIG. 3).

  Thereafter, it is returned to the carrier 11 via the transport mechanism B. In FIG. 1, the shelf units U <b> 1 to U <b> 4 are each laminated with a heating / cooling processing module 40. In this embodiment, the static elimination wafer J which is the static elimination jig according to the present invention is stored in the static elimination wafer storage module 50 provided in any layer of the shelf unit U4, for example.

  Next, the configuration of the static elimination wafer J according to the present invention will be described in detail. The static elimination wafer J according to the present invention is formed in a disk shape having the same size as the wafer W to be processed, for example, placed in the coating and developing processing apparatus 1 described above, and is transferred by the transfer mechanisms A1, A2, A3, A4, etc. Can be transported to each unit.

<First Embodiment>
As shown in FIG. 4A, the static elimination wafer J according to the first embodiment is provided with an ion generating electrode 51 to be described later on the outer peripheral portion on the surface side of the static elimination wafer J. The ion generation electrode 51 generates ions I and performs static elimination on the static elimination target portion. The ion generating electrode 51 is connected to a high-voltage power supply circuit 53 a disposed in the central portion of the static elimination wafer J through a conducting wire 52. The high-voltage power supply circuit 53a is a control circuit that applies, for example, a pulsed AC voltage to the ion generating electrode 51. The high-voltage power supply circuit 53a is a booster circuit such as a DC-DC converter (DC-DC conversion circuit). To the battery 53b. As the battery 53b, for example, a rechargeable secondary battery such as a lithium battery can be used. In this embodiment, the battery is a DC type. A plurality of ion generation electrodes 51 are provided, for example, on the outer peripheral portion of the static elimination wafer J, and are arranged so that the longitudinal direction of the ion generation electrode 51 is the tangential direction of the static elimination wafer J.

  Further, in the central portion of the static elimination wafer J, for example, a wireless circuit 54 that communicates wirelessly with an external control unit 60a is provided, and an ON / OFF signal of a voltage output from the control unit 60a is sent to the ion generation electrode 51. Send. The high-voltage power supply circuit 53a, the battery 53b, and the wireless circuit 54 are formed on the circuit board C.

  As shown in FIGS. 4A and 4B, on the surface side of the static elimination wafer J in the present embodiment, a plurality of airflow forming wings 55 having wall portions 55a protruding from the surface are provided. This air flow forming wing 55 constitutes an air flow forming portion of the present invention. The airflow forming wing 55 is formed so that when the static elimination wafer J rotates, the airflow generated by the rotation collides with the wall portion 55a to form an airflow from the central portion to the outer peripheral portion of the static elimination wafer J, for example. The static elimination wafer J is arranged extending in the radial direction.

  Further, the static elimination wafer J is provided with a plurality of air flow guide holes 56 (6 are shown in the drawing) adjacent to the ion generating electrode 51 penetrating the front side and the rear side. By guiding the air flow from the front surface side of the wafer J to the back surface side, ions generated on the front surface side of the static elimination wafer J are guided to the back surface side.

  As shown in FIG. 5, the ion generating electrode 51 includes a discharge electrode 501 made of a conductive member having a plurality of fine protrusions, and a dielectric electrode 502 that is disposed so as to surround the discharge electrode 501 and is also formed of the conductive member. And a dielectric 503 sandwiched between the discharge electrode 501 and the dielectric electrode 502. The dielectric 503 is sandwiched between the discharge electrode 501 and the dielectric electrode 502 and covers the dielectric electrode 502, and is formed of an insulating member such as ceramic or mica. The discharge electrode 501 and the dielectric electrode 502 of the ion generating electrode 51 are connected to the high-voltage power supply circuit 53 a and the battery 53 b in this order via a conducting wire 52, and a voltage is applied to the discharging electrode 501 via the conducting wire 52.

  The ion generating electrode 51 and the conductive wire 52 can be formed by a photolithography process. Since the ion generating electrode 51 can be formed in the photolithography process, the static elimination wafer J can be reduced in weight, and the weight burden on the transfer mechanism and the mounting portion in the processing module can be reduced. .

  Ion generation of the static elimination wafer J is controlled by an external control unit 60a, and ions are generated at the ion generation electrode 51 by a signal from the control unit 60a.

  The external control unit 60a is built in the control computer 60, and the control computer 60 is provided with a computer-readable storage medium storing software for causing the control computer 60 to execute the control program. And a control signal is output to each unit. The control program is stored in a storage medium such as a hard disk, a compact disk, a flash memory, a flexible disk, or a memory card, and is used by being installed in the control computer 60 from these storage media.

  Next, a description will be given of a method in which the static elimination wafer J according to the present embodiment neutralizes each static elimination target portion. In the present embodiment, for example, the transporting mechanisms A1 to A4, the liquid processing module 30, and the heating / cooling processing module 40 are the static elimination target portions. Below, the static elimination method of each static elimination object part is demonstrated with reference to FIGS. The static elimination wafer J is transferred to each module in the coating and developing treatment apparatus 1 by the controller 60a based on the conveyance recipe of the static elimination wafer J at the start-up and maintenance of the coating and developing treatment apparatus 1 or between lots. Is done.

  Here, a method of removing the charge from each of the transport mechanisms A1 to A4, B, E, and G will be described using the transport mechanism A3 as an example. The transport mechanism A3 has a transport arm 20 as shown in FIG. The transfer arm 20 has, for example, a horseshoe shape at the wafer holding portion. A plurality of support portions 20a are provided inside the horseshoe-shaped portion of the transfer arm 20, and the wafer W or the static elimination wafer J can be supported on these support portions 20a. The transfer arm 20 can move, for example, a rail 22 provided on the base 21 in the front-rear direction. For example, the base 21 is attached to a rail 23 extending in the vertical direction so as to be movable up and down by an elevating mechanism (not shown). The rail 23 is attached to a rail 24 extending in the left and right direction by a moving mechanism (not shown). It is attached to be movable. With these configurations, the transfer arm 20 can move in the three-dimensional direction of the front-rear direction, the up-down direction, and the left-right direction. Further, the transfer arm 20 is rotatably provided with the base 21.

  The transfer mechanism A3 can move the transfer arm 20 into the static elimination jig storage module 50, receive the static elimination wafer J, and then transfer it to a predetermined position in another processing module. In this way, the static elimination wafer J is transported into each processing module by the transport mechanism A3, so that each static elimination target portion in the coating and developing apparatus 1 can be neutralized. The transfer of the static elimination wafer J by the transfer arm 20 is controlled by an external control unit 60 a that controls the operation of the transfer arm 20.

  As shown in FIG. 7A, the static elimination jig storage module 50 has a mounting table 58 on which a static elimination wafer J is placed in a processing container 57. In addition, a charging power source 59 that is a charging unit for charging the battery 53b of the static elimination wafer J is provided on the ceiling portion of the processing container 57 so as to be movable up and down. On one side surface of the processing container 57, a loading / unloading port 57a through which the transfer arm 20 enters to load / unload the static elimination wafer J is formed. When the static elimination wafer J is stored in the static elimination jig storage module 50, the battery 53b is charged by the charging power source 59. When the charging is completed, the charging power source 59 rises to the ceiling portion of the processing container 57, and the connection with the battery 53b is released. Instead of the charging power source 59, a charger that charges the battery 53b in a non-contact manner by electromagnetic induction may be used.

  First, the static elimination wafer J mounted on the mounting table 58 of the static elimination jig storage module 50 is transferred to the transfer arm 20 of the transfer mechanism A3 that has entered the processing container 57 from the carry-in / out port 57a. At this time, charging of the static elimination wafer J has already been completed, and the connection between the battery 53b and the charging power source 59 is released. When the transfer arm 20 enters the processing device 57, a voltage ON signal is transmitted from the control unit 60 a to the radio circuit 54 of the static elimination wafer J, and ions I are generated from the ion generation electrode 51. The ions I are diffused from the static elimination wafer J into the processing container 57 by the down flow from above the processing container 57, and the transfer arm 20 is neutralized.

  When the transfer arm 20 is withdrawn from the processing container 57 while holding the static elimination wafer J, the ions I from the ion generating electrodes 51 hold the static elimination wafer J due to the downflow in the transfer path of the transfer mechanism A3. It diffuses around the arm 20. Further, ions are diffused to the back surface side of the static elimination wafer J by riding downflow from the airflow guide hole 56 of the static elimination wafer J. In this way, the entire transfer mechanism A3 is neutralized by the static elimination wafer J, and when a predetermined time, for example, several seconds elapses after the conveyance arm 20 holds the static elimination wafer J, the radio circuit 54 of the static elimination wafer J from the controller 60a. The signal of voltage OFF is transmitted to, and the generation of ions I from the ion generating electrode 51 stops. Thereafter, the transfer arm 20 transfers the static elimination wafer J to the liquid processing module 30 which is the next static elimination target portion.

  As shown in FIG. 8, the liquid processing module 30 includes a spin chuck 32 that serves as a substrate holding unit in a processing container 31. The spin chuck 32 is configured to hold the wafer W horizontally by vacuum suction, and can be rotated around a vertical axis by a drive unit 33. A cup 34 is provided around the spin chuck 32, and a drainage unit including an exhaust pipe 35 and a drain pipe 36 is provided on the bottom surface of the cup 34. Further, a processing liquid nozzle 37 for discharging a processing liquid such as a resist liquid is provided almost at the center of rotation of the wafer W, and is provided on the outer side of one end side of the cup 34 by a moving mechanism (not shown). It is configured to be movable between the nozzle standby section 38 and the position where the chemical solution is supplied to the rotation center of the wafer W, and to be movable up and down. On one side surface of the processing container 31, a loading / unloading port 31 a through which the transfer arm 20 enters to load / unload the wafer W is formed, and an open / close shutter 31 b is provided.

  When discharging the liquid processing module 30 as described above, first, the opening / closing shutter 31b of the liquid processing module 30 is opened, and the transfer arm 20 holding the discharging wafer J enters the liquid processing module 30 from the loading / unloading port 31a. (FIG. 9A). At this time, a voltage ON signal is transmitted from the control unit 60 a to the radio circuit 54 of the static elimination wafer J, and ions I are generated from the ion generation electrode 51.

  The static elimination wafer J is transferred from the transfer arm 20 to lifting pins (not shown) and placed on the spin chuck 32. After the transfer arm 20 is withdrawn from the processing container 31, as shown in FIG. 9B, the spin chuck 32 is rotated by the driving unit 33, and the static elimination wafer J is rotated. Then, an air flow is generated by the rotation, and further, an air flow flows from the center portion of the static elimination wafer J to the outer peripheral portion by the air flow forming wing 55 of the static elimination wafer J. The ions I generated from the ion generating electrode 51 in the airflow are carried to the outer peripheral portion of the static elimination wafer J, and static elimination of the cup 34 and the nozzle standby portion 38 is performed. Ions I flow from the airflow guide holes 56 of the static elimination wafer J to the back side of the static elimination wafer J, and the ions I also remove the spin chuck 32 and other parts such as the drive unit 33 below the spin chuck 32. Is done.

  Further, the ions I generated on the surface of the static elimination wafer J are diffused throughout the processing container 31 by the down flow in the processing container 31 of the liquid processing module 30.

  When the neutralization by the neutralization wafer J is completed, the neutralization wafer J is lifted by lifting pins (not shown) and received by the transfer arm 20 that has entered from the loading / unloading port 31a. At this time, the control unit 60a transmits a voltage OFF signal to the ion generation electrode 51 through the radio circuit 54 of the static elimination wafer J, and the generation of the ions I stops.

  Next, a method for removing electricity from the heating / cooling processing module 40 will be described. As shown in FIG. 10, the heating / cooling processing module 40 includes a heating plate 42 and a cooling plate 43 that also serves as a transfer arm in a processing container 41. In this case, the cooling plate 43 is formed so as to be movable back and forth with respect to the heating plate 42 by a moving mechanism (not shown). The cooling plate 43 is provided with two slits 43a for avoiding interference with a lift pin (not shown). The heating / cooling processing module 40 can transfer the wafer W between the transport mechanisms A1 to A4 and the heating plate 42 by the cooling plate 43, and can perform heating and cooling in one unit. On one side surface of the processing container 41, a loading / unloading port 41a for the transfer arm 20 to enter and load / unload the wafer W is formed, and an open / close shutter 41b is provided.

  When the above-described heating / cooling processing module 40 is discharged, first, the opening / closing shutter 41b of the heating / cooling processing module 40 is opened, and the transfer arm 20 holding the discharging wafer J is heated / cooled from the loading / unloading port 41a. It enters into the processing module 40 (FIG. 11A). At this time, a voltage ON signal is transmitted from the control unit 60 a to the radio circuit 54 of the static elimination wafer J, and ions I are generated from the ion generation electrode 51.

  The static elimination wafer J is transferred from the transfer arm 20 to lifting pins (not shown) and transferred to the cooling plate 43. After the transfer arm 20 has retreated from the processing container 41, as shown in FIG. 11B, the opening / closing shutter 41b of the processing container 41 is closed, and the inside of the processing container 41 is hermetically sealed. The static elimination wafer J is placed on the cooling plate 43 for a predetermined time, for example, for a few seconds, and the surface of the static elimination wafer J is controlled by the vertical and horizontal airflows controlled to process the wafer W from above the processing container 41. The ions I generated above are diffused throughout the processing vessel 31. Furthermore, turbulent flow can be generated and ions I can be diffused by moving the lifting pins up and down or moving the cooling arm to the left and right. Ions I flow from the airflow guide holes 56 of the static elimination wafer J on the back side of the static elimination wafer J, and the cooling plate 43 is neutralized by the ions I.

  Thereafter, the cooling plate 43 moves onto the heating plate 42, the static elimination wafer J is transferred to the lifting pins (not shown), the lifting pins (not shown) are lowered, and the static elimination wafer J is transferred to the heating plate 42. (FIG. 11C). The static elimination wafer J is placed on the heating plate 42 for a predetermined time, for example, for a few seconds, and during that period, the static elimination wafer J is controlled by the up, down, left, and right airflow controlled to process the wafer W from above the processing container 41. The ions I generated on the surface of the metal diffuse to the periphery of the static elimination wafer J. Furthermore, by moving the lifting pins up and down, turbulence can be generated and ions I can be diffused. Further, ions I are also induced to the back side of the static elimination wafer J by the airflow guide holes 56 formed in the static elimination wafer J, and the heating plate 42 is neutralized.

  When the neutralization of the heating / cooling processing module 40 is completed, the static elimination wafer J is transferred from the cooling plate 43 to the transfer arm 20 that has entered from the carry-in / out port 41b, and the control unit 60a transmits the radio circuit 54 of the static elimination wafer J. Then, a voltage OFF signal is transmitted to the ion generating electrode 51, and the generation of ions I stops.

  The static elimination wafer J after neutralization of the static elimination target portion in the coating and developing apparatus 1 is transferred from the loading / unloading port 57a of the static elimination jig storage module 50 to the processing container 57 by the transfer mechanism A3 and placed on the mounting table 58. After that, the charging power source 59 is lowered onto the static elimination wafer J and connected to the battery 53b, and the battery 53b is charged.

  According to the first embodiment, since static elimination is performed using the static elimination wafer J that can be transported by the transport mechanism of the coating and developing treatment apparatus 1, in the coating and developing treatment apparatus 1 as in the case of normal wafer W transportation. The static elimination wafer J can be transferred, and the static elimination work can be performed even if the operator does not enter the apparatus. Therefore, the recovery time after the start-up and maintenance is completed can be greatly shortened. In addition, since each member in the coating and developing treatment apparatus 1 and floating particles can be neutralized with a single static elimination wafer J, it is necessary to attach a static elimination device or the like to each member or the space of the transfer path of the wafer W. In addition, it is possible to avoid an increase in cost for static elimination.

  Further, since the airflow forming wing 55 is provided in the static elimination wafer J, when the static elimination wafer J placed on the spin chuck 32 of the liquid processing module 30 is rotated, the center of the static elimination wafer J is rotated by the rotational airflow. By generating an air flow from the peripheral portion to the outer peripheral portion, the ions I generated at the ion generating electrode 51 of the static elimination wafer J are diffused to the periphery of the static elimination wafer J and further diffused throughout the processing container of each module. It becomes possible.

  Further, since the airflow guide hole 56 is disposed adjacent to the ion generating electrode 51 in the static elimination wafer J, the ions I generated from the ion generating electrode 51 can be guided to the back surface side, and a separate airflow generating device is provided. Even if it is not provided, ions can be effectively carried to each member.

  In addition, since the discharge electrode 501, the dielectric electrode 502, and the dielectric 503 of the ion generation electrode 51 of the static elimination wafer J can be formed by a photolithography process, the ion generation electrode 51 is formed by the coating and developing apparatus 1 that performs static elimination. In addition, the static elimination wafer J can be reduced in weight, and the weight burden on the transfer mechanism and the processing module is reduced.

Second Embodiment
Next, a second embodiment of a static elimination wafer J as a static elimination jig according to the present invention will be described with reference to FIG.

  This embodiment is different from the first embodiment in that an ion generating electrode 51 is provided on the back side of the static elimination wafer J.

  As shown in FIGS. 12A and 12B, the static elimination wafer J of the second embodiment is provided with a battery 53 on the front surface side and an ion generating electrode 51 on the back surface side. For example, a plurality of ion generating electrodes 51 are provided in the central portion on the back surface side of the static elimination wafer J and in the radial direction, and are respectively connected to a high-voltage power supply circuit (not shown) and a battery 53b through a conducting wire 52.

  According to the second embodiment, the ions I can be directly supplied to the static elimination target portion located on the back surface side of the static elimination wafer J, and static elimination can be performed more reliably. In the second embodiment, an airflow guide hole 56 is provided as in the first embodiment.

  In addition to the second embodiment, an ion generating electrode 51 may be provided on the surface side of the static elimination wafer J as shown in FIG. In this case, the airflow induction hole formed in the first embodiment is not necessary.

<Third Embodiment>
Next, regarding a third embodiment of a static elimination wafer J as a static elimination jig according to the present invention, FIG. 14 (a), FIG. 14 (b), FIG. 15, FIG. 16 (a) to FIG. Will be described with reference to FIG.

  In the present embodiment, a gas ejection part 70 that ejects air upward is provided on the surface side of the static elimination wafer J, and this gas ejection part 70 is disposed at the center of the static elimination wafer J via a conductor 72. It is different from the first embodiment in that it is connected to the power supply circuit 74f.

  The gas ejection part 70 is provided with a gap by providing a spacer 71a between the gas elimination wafer J, a casing 71 having a gas suction port 71b on the lower surface and a gas ejection port 71c on the upper surface, The housing 71 includes a piezoelectric micro blower 74 disposed via a passage 71d that communicates the gas inlet 71b and the gas outlet 71c.

  The piezoelectric micro blower 74 includes a blower body 74b having an ejection port 74a on the upper surface, a diaphragm 74c having an outer peripheral portion fixed to the blower body 74b, and a piezoelectric element 74d made of, for example, piezoelectric ceramics fixed to the surface of the diaphragm 74c. And a blower chamber 74e formed between the blower body 74b and the diaphragm 74c, and a high-voltage power supply circuit 74f for applying a voltage to the piezoelectric element 74d. The high voltage power circuit 74f is connected to the battery 53b.

  The piezoelectric micro blower 74 applies a voltage to the piezoelectric element 74d to drive the diaphragm 74c to resonate, so that the air that is induced by the air discharged from the discharge port 74a and sucked from the gas suction port 71b is transmitted from the gas jet port 71c. Spouts upward. In this case, the flow velocity of the gas ejected from the gas ejection port 71c is set to 20 m / s, for example, and the flow rate is set to 1 l / min.

  Next, the operation of the gas ejection part 70 will be described based on FIGS. 16 (a) to 16 (c). FIG. 16A shows the gas ejection portion 70 in a state where no voltage is applied to the piezoelectric element 74d. At this time, the diaphragm 74c is flat.

  FIG. 16B shows a gas ejection portion 70 that is bent so that the diaphragm 74c is convex downward by applying a voltage to the piezoelectric element 74d. Thus, since the volume of the blower chamber 74e is increased by bending the diaphragm 74c so as to protrude downward, the air in the passage 71d is sucked into the blower chamber 74e through the discharge port 74a. At this time, since air in the passage 71d is sucked into the blower chamber 74e, air near the surface of the static elimination wafer J is sucked into the passage 71d from the gas suction port 73.

  Next, as shown in FIG. 16C, since the volume of the blower chamber 74e is reduced by bending the diaphragm 74c so as to protrude upward, the air in the blower chamber 74e is discharged from the discharge port 74a and the gas jet. It is pushed upward through the outlet 71c. At this time, the air in the blower chamber 74e attracts the air in the passage 71d and is pushed upward, so that the amount of air ejected from the gas ejection port 74 can be increased.

  Thus, the air sucked from the gas suction port 73 can be ejected to the gas ejection port 74 by bending and vibrating the diaphragm 74c.

  According to the third embodiment configured as described above, by providing the gas ejection portion 70 on the static elimination wafer J, the ions I generated at the ion generation electrode 51 of the static elimination wafer J are ejected from the gas ejection portion 70. Since the gas to be discharged can be diffused to the static elimination target portion, the ions I can be carried to the static elimination target portion that is away from the ion generating electrode 51.

  In the third embodiment, the gas may be ejected from the gas ejection unit 70 without generating the ions I from the ion generation electrode 51. By doing in this way, it becomes possible to improve the cleaning efficiency of the static elimination object.

<Fourth embodiment>
Next, a fourth embodiment of a static elimination wafer J as a static elimination jig according to the present invention will be described with reference to FIGS. 17 (a) and 17 (b).

  This embodiment is different from the third embodiment in that an airflow direction changing plate 75 for changing the flow direction of the gas ejected from the gas ejection part 70 is provided on the upper part of the gas ejection part 70. The airflow direction changing plate 75 is erected on the static elimination wafer J, and the upper portion of the airflow direction changing plate 75 is bent toward the outer peripheral portion of the static elimination wafer J.

  Therefore, since the flow path of the air ejected from the gas ejection part 70 is changed by the influence of the airflow direction changing plate 75 bent at the upper part toward the outer peripheral part of the static elimination wafer J, the flow path is changed to the static elimination target part. Ions I can be concentrated and carried.

  In the fourth embodiment, when the static elimination wafer J is placed on the spin chuck 32 and the spin chuck 32 is rotated within a predetermined angle range, the ions I are sent from the ion generating electrode 51 for a predetermined time. You may do it. By doing in this way, ion I can be efficiently carried to the whole static elimination object.

  In the fourth embodiment, the gas may be ejected from the gas ejection unit 70 without generating the ions I from the ion generation electrode 51. By doing in this way, it becomes possible to improve the cleaning efficiency of the static elimination object.

  Although the present invention has been described above with reference to some embodiments, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the matters included in the appended claims. It is.

  For example, in the above embodiment, the case where the charging unit of the battery 53b of the static elimination wafer J is provided in the static elimination jig storage module 50 has been described, but the charging unit may be provided in another place in the coating and developing treatment apparatus. Good. For example, as shown in FIG. 3B, a charging unit 59A may be provided in the transfer unit TRS3 for the static elimination wafer J. That is, the delivery unit TRS3 is configured by a plate 600 having three (two are shown in the drawing) support pins 601 that support the static elimination wafer J, and the static elimination wafer J is provided on the plate 600. A charger 59A, which is a charging unit for charging the battery 53b, is provided. In this case, the charger 59A is configured to charge the battery 53b in a non-contact manner by electromagnetic induction. Similarly, another charger unit 59A may be provided in another delivery unit TRS4.

  With this configuration, the battery 53b provided on the static elimination wafer J in the transfer unit TRS3 or TRS4 provided in the coating and developing treatment apparatus without returning the static elimination wafer J to the static elimination jig storage module 50 can be provided. Can be charged.

  In the above embodiment, the static elimination wafer J is stored in the dedicated static elimination jig storage module 50. However, for example, the carrier 11 of the static elimination wafer J is placed on the carrier block S1 from other places. Then, the static elimination wafer J may be transferred from the carrier 11 to each static elimination target portion.

  In the above embodiment, the static elimination wafer J is provided with the wireless circuit 54 and the ON / OFF of the voltage to the ion generating electrode is controlled by the external control unit 60a. However, the wireless circuit 54 is not provided. For example, when the static elimination wafer J is placed on the placement part 58 of the static elimination jig storage module 50, the voltage is turned off, the charging is completed by the charging power source 59, and the transfer arm 20 removes the static elimination wafer J. When receiving from the mounting part 58, you may control to turn ON a voltage.

  The target to be neutralized using the static elimination jig of the present invention is not limited to each member and floating particles of the coating and developing treatment apparatus described above, other liquid treatment apparatuses such as a cleaning apparatus, an etching apparatus, The present invention can also be applied to each member of other substrate processing apparatuses such as a film forming apparatus and a substrate bonding apparatus.

  Further, a plurality of types of static elimination jigs according to the present invention may be prepared in different forms, and static elimination may be performed using an optimal static elimination jig according to the target to be neutralized.

DESCRIPTION OF SYMBOLS 50 Static elimination jig | tool storage module 51 Ion generating electrode 52,72 Conductor 53a, 74f High voltage power supply circuit 53b Battery 54 Wireless circuit 55 Airflow formation wing 56 Airflow induction hole 58 Mounting stand (mounting part)
59 Charging power supply (charging part)
59A charger (charging unit)
60 Control computer (control means)
60a Control part 501 Discharge electrode 502 Dielectric electrode 503 Dielectric 600 Plate (mounting part)
601 Support pin (mounting part)
DESCRIPTION OF SYMBOLS 70 Gas ejection part 71 Case 71b Gas inlet 71c Gas outlet 71d Passage 74 Piezoelectric micro blower 74a Discharge port 74b Blower main body 74c Diaphragm 74d Piezoelectric element 74e Blower chamber 75 Air flow direction change board J Static elimination wafer (static elimination jig)

Claims (18)

A jig for neutralizing each member and floating particles of a substrate processing apparatus,
It can be transported by the transport mechanism of the substrate processing apparatus, and has a substrate shape that can be placed in each processing module,
An ion generating electrode composed of a discharge electrode, a dielectric electrode, and a dielectric sandwiched between the discharge electrode and the dielectric electrode;
A high voltage power supply circuit for applying a voltage to the discharge electrode and the dielectric electrode;
And a battery for supplying energy to the high-voltage power supply circuit.   The static elimination jig according to claim 1, further comprising an airflow forming portion that forms an airflow for carrying ions generated by the ion generating electrode to each member of the substrate processing apparatus.   The static elimination jig according to claim 1 or 2, further comprising an airflow guide hole for guiding an airflow for transporting ions generated by the ion generating electrode to each member of the substrate processing apparatus.   The airflow guide hole is a through-hole penetrating from the front surface to the back surface of the static elimination jig, and a plurality of the airflow guide holes are disposed adjacent to the discharge electrode of the ion generating electrode. Static elimination jig.   The air flow forming portion is configured by a wall portion protruding from the front surface or the back surface of the static elimination jig, and the wall portion extends in a radial direction of the static elimination jig and is adjacent to the discharge electrode of the ion generation electrode. 5. The static elimination jig according to claim 2, wherein the static elimination jig is arranged as follows.   The neutralization device according to any one of claims 2 to 5, wherein a plurality of the airflow forming portions are provided on at least the front surface or the back surface of the static elimination jig, and the airflow forming portions are arranged at equal intervals. Jig.   The static elimination jig according to claim 1, further comprising a gas ejection portion that ejects a gas for transporting ions generated by the ion generation electrode to each member of the substrate processing apparatus. The static elimination jig according to claim 7, wherein an airflow direction changing plate for changing a flow direction of the gas ejected from the gas ejection portion is provided on an upper portion of the gas ejection portion. The gas ejection part is installed with a gap between the static elimination jig, a housing having a gas suction port on a lower surface and a gas ejection port on an upper surface, and the gas suction port in the housing And a piezoelectric micro blower disposed through a passage communicating with the gas jet port,
The piezoelectric micro blower includes: a blower body having a discharge port on an upper surface; a diaphragm having an outer peripheral portion fixed to the blower body; a piezoelectric element fixed to a surface of the diaphragm; and the blower body and the diaphragm. A gas discharged from the discharge port by applying a voltage to the piezoelectric element to drive the diaphragm to resonate; and a blower chamber formed therebetween, and a high-voltage power supply circuit for applying a voltage to the piezoelectric element. The static elimination jig according to claim 7 or 8, wherein the gas induced by the gas and sucked from the gas suction port is ejected from the gas ejection port.   The static elimination jig according to claim 1, wherein the discharge electrode, the dielectric electrode, and the dielectric are formed by a photolithography process. The ion generating electrode is provided on the back side of the static elimination jig,
The static elimination jig according to claim 1, wherein the battery is provided on a surface side of the static elimination jig. A static elimination jig mounting portion for mounting the static elimination jig according to any one of claims 1 to 11,
A transport mechanism for removing and transporting the static elimination jig from the static elimination jig mounting portion;
A controller that controls the static elimination jig to generate ions from the static elimination jig when the static elimination jig is held on the transport mechanism;
A substrate processing apparatus comprising:   The board according to claim 12, wherein a charging unit for charging the battery provided in the static elimination jig is provided in a container having the static elimination jig mounting part. Processing equipment.   The static elimination jig mounting portion is constituted by a plate having a support pin that supports the static elimination jig, and the battery provided in the static elimination jig is charged on the plate. The substrate processing apparatus according to claim 12, wherein a charging unit is provided, and the charging unit is configured to charge the battery in a non-contact manner by electromagnetic induction. A processing module including a substrate holding unit on which the static elimination jig transported by the transport mechanism is placed;
The static elimination jig is controlled by the control unit so that ions are generated from the static elimination jig when the static elimination jig is placed on the substrate holding part in the processing module. The substrate processing apparatus according to claim 12. A static elimination method for a substrate processing apparatus using the static elimination jig according to claim 1,
A step of taking out a static elimination jig for neutralizing each member of the substrate processing apparatus and floating particles from the static elimination jig storage module by a transport mechanism;
A step of transporting the static elimination jig to each processing module of the substrate processing apparatus by the transport mechanism;
And a step of neutralizing the transport mechanism and floating particles by generating ions from the static elimination jig in the transport step. A static elimination method for a substrate processing apparatus using the static elimination jig according to claim 1,
A step of placing a static elimination jig for neutralizing each member of the substrate processing apparatus and floating particles by a transport mechanism on a rotatable substrate holder in one processing module of the substrate processing apparatus;
Rotating the substrate holder to rotate the static elimination jig;
And a step of neutralizing each member and floating particles in the one processing module by generating ions with the static elimination jig. A static elimination method for a substrate processing apparatus using the static elimination jig according to claim 1,
A step of placing a static elimination jig for neutralizing each member of the substrate processing apparatus and floating particles by the transport mechanism on a substrate holding part in one processing module of the substrate processing apparatus;
Generating ions from the static elimination jig placed on the substrate holding unit;
And a step of neutralizing each member and suspended particles by generating an air flow for carrying the ions to each member in a processing module of the substrate processing apparatus.

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