JP2013134986A - Substrate processing apparatus and substrate processing system having the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the productivity and prevent contamination of a substrate in a substrate processing apparatus, which radiates an ion beam to the substrate while transferring a tray on which the substrate is placed, to perform substrate processing, and a substrate processing system having the substrate processing apparatus.SOLUTION: A substrate processing apparatus comprises: a process chamber 100 provided with a transfer passage 30 for transferring a tray 20 on which one or more substrates 10 are safely placed; an ion beam radiation part 300 provided at the upper side of the transfer passage 30; and a beam shutoff part 400 provided at the lower side of the transfer passage 30. When the tray 20 is positioned in an ion beam radiation region, an ion beam is radiated on a surface of the substrate 10. When the tray 20 is not positioned in the ion beam radiation region, the ion beam is radiated to the beam shutoff part 400. This structure prevents the ion beam from being directly radiated to the process chamber 100.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing system having the same, and more particularly to a substrate processing apparatus that performs substrate processing by irradiating a substrate with an ion beam and a substrate processing system having the same.

  As a method for forming a semiconductor region in a semiconductor, a glass substrate for an LCD panel, a solar cell substrate, or the like, that is, a pn junction structure, there are a thermal diffusion method and an ion irradiation method.

However, when implanting impurities by thermal diffusion method, when depositing POCl ₃ for injecting an impurity doping is not performed uniformly, process uniformity is low, the case of using POCl _3, after the deposition, the substrate There are problems such as removal of the PSG film formed as a by-product on the surface, removal of the side surface semiconductor structure (edge separation), and the process is complicated, the entire process time is increased, and the productivity is lowered.

  On the other hand, an ion implantation method in which ions are injected into a substrate by irradiating an ion beam is easier to control than a thermal diffusion method, and precise impurity implantation is possible. .

  Meanwhile, a substrate processing apparatus for irradiating ions on the surface of a substrate as described above is generally provided in an ion beam source and an ion beam generated from the ion beam source in a sealed processing space. By irradiating the substrate placed (installed) on the station, the substrate is irradiated with ions.

  However, in the conventional substrate processing apparatus as described above, since the ion irradiation process is performed by a single ion beam source, there is a problem that the ion irradiation pattern is limited and it is difficult to perform a large amount of ion irradiation.

  In addition, in order to perform ion irradiation processes of various patterns, it must be performed by a plurality of substrate processing apparatuses. Therefore, the processing is complicated, the apparatus is expensive, and the space occupied by the apparatus becomes large. is there.

  In addition, since the conventional substrate processing apparatus performs ion implantation while moving the ion beam in a state where the substrate is fixed, the apparatus can be replaced with a substrate after ion implantation, an apparatus for moving the ion beam, or the like. Are complicated, require a long process time, and have low productivity.

  An object of the present invention is to improve productivity by performing an ion irradiation process by irradiating a substrate with an ion beam while transferring a tray on which the substrate is seated in order to solve the above-described problems. An object of the present invention is to provide a substrate processing apparatus capable of preventing contamination of a substrate due to an evaporation phenomenon by irradiating a process chamber with an ion beam, and a substrate processing system having the substrate processing apparatus.

  The present invention has been created to achieve the above-described object of the present invention. The present invention provides a process chamber provided with a transfer path through which a tray on which one or more substrates are seated is transferred. When the ion beam generated from the ion beam source is irradiated to the ion beam irradiation region set in the transfer path and the tray is positioned in the ion beam irradiation region, the surface of the substrate is irradiated with the ion beam. The ion beam irradiation unit provided on the upper side of the transfer path and the lower side of the transfer path, and when the tray is not positioned in the ion beam irradiation region, the process chamber is directly irradiated with the ion beam. A substrate processing apparatus including a beam blocking unit that prevents the substrate processing from being performed is disclosed.

  The beam blocking part is constituted by a single blocking member.

  The beam blocking unit is provided with a plurality of blocking members so as to cover the inner bottom surface of the process chamber, and prevents the chamber body from being exposed to the ion beam through a portion where the plurality of blocking members are connected. In order to do so, the plurality of blocking members are formed with a step at a portion where they are connected to the combined blocking members.

  The beam blocking unit includes one or more upper plate portions that are irradiated with an ion beam, and one or more cooling units that are coupled to a bottom surface of the upper plate portion to cool the upper plate portion.

  The upper plate portion includes a metal base material, a non-metal layer formed on the base material, and a coating layer of an electrically conductive material coated on the non-metal layer.

  The upper plate portion includes any one material of aluminum, aluminum alloy, graphite, carbon reinforcing fiber, carbon composite material, and SiC.

  The upper plate portion is coated with the coating material containing Si.

  The upper plate part is provided in a plurality so as to cover the upper surface of the cooling part, in order to prevent the ion beam from being exposed to the cooling part through a portion where the upper plate parts are connected. In the plurality of upper plate portions, a step is formed at a portion connected to the upper plate portions to be joined.

  The upper plate portion is formed with a through hole and coupled to the cooling portion by a bolt, and the through hole is formed by a cap portion made of the same material as the upper plate portion in order to prevent the bolt from being exposed to the upper side. Covered.

  There is further provided a mask provided between the ion beam irradiation unit and the transfer path and having one or more holes so that a part of the ion beam is irradiated onto the surface of the substrate.

  The beam blocking unit may be provided between the transfer path and the inner bottom surface of the process chamber, or may be provided on the inner bottom surface of the process chamber.

  The beam blocking unit has an upper surface larger than a region irradiated with the ion beam.

  A number of irregularities are formed on the upper surface of the beam blocking unit to scatter the irradiated ion beam.

  The beam blocking part forms at least a part of the bottom surface of the process chamber or forms at least a part of a wall body forming the bottom surface of the process chamber.

  The present invention is also coupled to a process module including the substrate processing apparatus having the above-described configuration and one side of the process module, and the internal pressure is alternately converted into an atmospheric pressure and a vacuum pressure. The tray on which the substrate is seated is transmitted, and is coupled to the load lock module for transmitting the tray to the process module and the other side of the process module, and the internal pressure is alternately converted into atmospheric pressure and vacuum pressure. And an unload lock module for transferring the tray from the process module and discharging the tray to the outside.

  The substrate processing apparatus and the substrate processing system having the same according to the present invention improve productivity by performing an ion irradiation process on a substrate while transferring a tray on which one or more substrates are seated, and an ion beam By providing a beam blocking unit that prevents direct irradiation of the inner wall of the chamber, particularly the bottom surface, when there is no tray in the region irradiated with the ion beam, the substrate is evaporated by vacuum irradiation under the ion beam irradiation. There is an advantage that contamination can be prevented.

  In addition, the substrate processing apparatus and the substrate processing system having the same according to the present invention protect the process chamber from the ion beam to extend the life of the process chamber, significantly reduce maintenance and repair costs, and reduce the overall cost of the equipment. There are benefits to get.

It is a conceptual diagram which shows the substrate processing system which concerns on this invention. It is a partial top view which shows the movement of the tray in the process chamber of the substrate processing apparatus of FIG. It is a top view which shows an example of the beam block part provided in the process chamber of the substrate processing apparatus of FIG. It is sectional drawing which shows the cross section of the VI-VI direction of FIG. It is sectional drawing which shows the cross section of the BB direction of FIG.

  Hereinafter, a substrate processing apparatus and a substrate processing system having the same according to the present invention will be described in detail with reference to the accompanying drawings.

  As shown in FIG. 1, the substrate processing system according to the present invention includes a process module 1, a load lock module 2 coupled to one side of the process module 1, and an unload coupled to the other side of the process module 1. Including the lock module 3.

  The process module 1 includes a substrate processing apparatus, which will be described later, and performs an ion irradiation process on the substrate, and can have various configurations.

  The load lock module 2 is coupled to one side of the process module 1, the internal pressure is alternately converted into atmospheric pressure and vacuum pressure, and is transmitted from the outside to the tray 20 on which one or more substrates 10 are seated. In this configuration, the tray 20 is transmitted to the process module 1, and various configurations are possible.

  The unload lock module 3 is coupled to the other side of the process module 1, the internal pressure is alternately converted into atmospheric pressure and vacuum pressure, the tray 20 is transmitted from the process module 1 and discharged to the outside, Various configurations are possible.

  In order to discharge the tray 20 that has finished the process to the outside, the unload lock module 3 has a substrate 10 seated on the tray 20 transferred from the process module 1 in the process module 1 in addition to pressure conversion. A cooling device may be further provided for cooling.

  On the other hand, the substrate into which ions have been implanted in the process module 1 requires a heat treatment to complete the impurity implantation process, and is coupled to the unload lock module 3 on the tray 20 transmitted from the unload lock module 3. A heat treatment module (not shown) for heat treating the substrate 10 may be further provided.

  The heat treatment module has a configuration in which the tray 20 loaded with the substrates 10 on which ion implantation has been completed in the process module 1 is transmitted from the unload lock module 3 to perform heat treatment, and various configurations can be made.

  In the heat treatment performed by the heat treatment module, the temperature, pressure, heat treatment time, and the like are determined according to conditions required for the substrate 10 after ion implantation.

  Meanwhile, the tray 20 to be transferred is temporarily stored between the load lock module 2 and the process module 1 and between the process module 1 and the unload lock module 3, and the internal pressure is atmospheric pressure and the process module 1. A buffer module (first buffer module and second buffer module) that is maintained at a pressure between the process pressures may be further provided.

  The first buffer module temporarily stores the tray 20 from the load lock module 2 while the internal pressure is between the atmospheric pressure and the process pressure of the process module 1, for example, while maintaining the process pressure of the process module 1. The second buffer module is configured to transmit the tray to the unload lock module 3 while maintaining the process pressure of the process module 1 between the atmospheric pressure and the process pressure of the process module 1, for example. Various configurations are possible.

  In particular, the first buffer module and the second buffer module wait for the process module not to perform a process when the pressure conversion and the tray replacement in the load lock module 2 and the unload lock module 3 are delayed, respectively. , The entire process can be prevented from being delayed.

  On the other hand, when the load lock module 2, the unload lock module 3, the first buffer module, and the second buffer module are provided, the load lock module 2, the unload lock module 3, the first buffer module, and the second buffer module ( The same applies to the heat treatment module). A plurality of transfer rollers 31 that support a part of the bottom surface of the tray 20 and move the tray 20 by rotation, and a rotational drive for rotationally driving at least a part of the transfer rollers 31 A portion (not shown) may be provided.

  On the other hand, reference numerals 510, 520, 530, and 540, which are not described in FIG. 1, respectively indicate gate valves for opening and closing each gate.

  Hereinafter, the substrate processing apparatus according to the present invention will be described in detail.

  The substrate processing apparatus according to the present invention includes a process chamber 100 provided with a transfer path 30 for transferring a tray 20 on which one or more substrates 10 are seated, as shown in FIGS. When an ion beam generated from an ion beam source (not shown) is irradiated to an ion beam irradiation region provided on the transfer path 30 and the tray 20 is positioned in the ion beam irradiation region, the ion beam is applied to the surface of the substrate. An ion beam irradiation unit 300 provided on the upper side of the transfer path 30 to be irradiated and a beam blocking unit 400 provided on the lower side of the transfer path 30 to prevent the process chamber 100 from being directly irradiated with the ion beam. Including.

  Here, the substrate 10 to be processed can be a substrate for a solar cell as well as a substrate for a semiconductor substrate and an LCD panel.

  In particular, the substrate 10 that is the substrate processing target of the substrate processing apparatus according to the present invention is preferably a silicon substrate for solar cells. At this time, ions irradiated by the ion beam irradiation unit 300 are distributed on the surface of the substrate 10. It can be an ion that forms one or more semiconductor regions.

  When the substrate processing target is a silicon substrate for a solar cell, the semiconductor region formed on the surface of the substrate 10 is a selective emitter, or an n-type semiconductor region for forming an IBC and p Type semiconductor region.

  The tray 20 is configured to load and transfer one or more substrates 10 and can have various configurations.

  As an example, the tray 20 may have any configuration as long as the material can stably support the substrate 10.

  As an example, the tray 20 may have any configuration as long as it is a material that can stably support the substrate 10, and the planar shape may have a rectangular shape. At this time, the substrate 10 has a rectangular n × m It may be arranged in the arrangement.

  The process chamber 100 is configured to form an environment in which ions can be implanted into the substrate 10 through the ion beam irradiation unit 300 and the transfer path 30 of the tray 20, and can be variously configured.

  For example, the process chamber 100 may include a chamber body 110 and an upper lead 120 that are detachably coupled to each other and form a sealed processing space S.

  The chamber body 110 may be formed with one or more gates 111 and 112 for entering and exiting the tray 20 and may be connected to an exhaust system for controlling exhaust and pressure in the processing space S. Here, the first gate 111 is formed so that the tray 20 is introduced into one end of the transfer path 30, and the second gate 112 is formed so that the tray 20 is discharged to the other end of the transfer path 30. The

  On the other hand, the transfer path 30 provided in the chamber body 110 is configured to move the tray 20, and any configuration is possible as long as the tray 20 can be transferred in the process chamber 100.

  As shown in FIG. 1, the transfer path 30 may be configured to transfer the tray 20 along the first gate 111 and the second gate 112 formed in the chamber body 110. A plurality of transfer rollers 31 that are disposed between the first gate 111 and the second gate 112, support a part of the bottom surface of the tray 20, and move the tray 20 by rotation, and at least a part of the transfer rollers 31 is rotationally driven. And a rotational drive unit (not shown) for the purpose.

  Here, the transfer path 30 means a transfer path of the tray 20 in the process chamber 100, and only a part of the configuration such as a roller is a physical configuration, and not all of the configuration is necessarily a physical configuration.

  The transfer path 30 is set with an ion beam irradiation region in which the ion beam is irradiated onto the substrate 10 that is seated when the tray 20 is positioned at a specific position.

  The ion beam source is configured to ionize a gas to be ionized to form an ion beam, and can have various configurations. Here, the ion beam source may be connected to a gas supply device so that a gas to be ionized is continuously supplied.

  The ion beam irradiation unit 300 is connected to the ion beam source, and the process chamber 100 is processed so that the surface of the substrate 10 transferred along the transfer path 30 is irradiated with the ion beam generated from the ion beam source. It is provided above the transfer path 30 in the space (S).

  In particular, the ion beam irradiation unit 300 guides an ion beam generated from an ion beam source, controls the intensity and concentration of the ion beam, and transfers an irradiation region suitable for ion implantation onto the surface of the substrate 10. It is formed on the surface of the substrate 10.

  Here, the ion beam irradiation unit 300 is configured so that the ion beam is irradiated only in a partial region, that is, the ion beam irradiation region, rather than the ion beam being irradiated over the entire transfer path 30. .

  Meanwhile, the process chamber 100 is provided between an ion beam irradiation path, that is, between the ion beam irradiation unit 300 and the transfer path 30 of the tray 20, so that a part of the ion beam is irradiated onto the surface of the substrate. A mask 310 having one or more holes may be further provided.

  The mask 310 is provided in an irradiation path irradiated with an ion beam, blocks the irradiation of the ion beam in a part of the region, and implants ions only in at least a part of the surface of the substrate 10. This is a configuration that allows various configurations.

  As an example, the mask 310 may include one or more open portions 311 formed so as to be open only in a portion corresponding to a partial region irradiated with ions on the surface of the substrate 10.

  The material of the mask 310 is preferably a stable and heat-resistant material such as graphite in consideration of the continuous irradiation of the ion beam.

  The mask 310 may be supported and provided by a support frame 340 provided in the process chamber 100.

  On the other hand, in the substrate processing apparatus according to the present invention, the ion beam is continuously irradiated regardless of the presence or absence of the tray 20 in the ion beam irradiation region in the transfer path 30.

  At this time, when the tray 20 is present in the ion beam irradiation region, there is no problem because the ion beam irradiation process is performed on the substrate 10, but when the tray 20 is not present, the inner wall of the process chamber 100 passes through the transfer path 30. Is irradiated.

  When the high temperature ion beam is directly irradiated to the inner wall, the process chamber 100 is affected by the process chamber 100 being overheated, the process chamber 100 is deformed, and the process chamber 100 is evaporated under a vacuum pressure. Problems such as contamination may be caused, such as making the process unstable or damaging the process chamber 100, shortening the life of the process chamber 100, or requiring maintenance and repair.

  Accordingly, the substrate processing apparatus according to the present invention further includes a beam blocking unit 400 that prevents the process chamber 100 from being directly irradiated with the ion beam.

  The beam blocking unit 400 is provided on the lower side of the transfer path 30 to prevent the ion beam from being directly irradiated onto the process chamber 100. The beam blocking unit 400 includes a transfer path 30 and an inner bottom surface of the process chamber 100. Or may be provided on the inner bottom surface of the process chamber 100 as shown in FIG.

  At this time, the beam blocking unit 400 may be of any configuration as long as it is provided below the transfer path 30 and can prevent the process chamber 100 from being directly irradiated with the ion beam.

  The beam blocking unit 400 preferably has a larger upper surface than the region irradiated with the ion beam in order to sufficiently prevent the process chamber 100 from being irradiated.

  In addition, as shown in FIGS. 1, 3 and 4 b, the upper surface of the beam blocking unit 400 may have a large number of irregularities 413 to scatter the irradiated ion beam.

  The plurality of projections and depressions 413 can scatter the ion beam irradiated to the beam blocking unit 400, minimize the temperature rise of the beam blocking unit 400 due to the ion beam irradiation, and suppress the evaporation effect.

  The plurality of projections and depressions 413 can have any configuration as long as the ion beam can be scattered, and the upper end of the projections and depressions 413 forms a linear shape parallel to one side in the beam blocking unit 400 having a rectangular planar shape, or a conical shape. It can have various shapes such as a pyramid, a truncated cone, a truncated pyramid, and a hemisphere.

  For example, the plurality of irregularities 413 may have a pyramid shape as shown in FIG.

  Furthermore, when the upper ends of the plurality of projections and depressions 413 form a linear shape parallel to one side in the beam blocking unit 400 having a rectangular planar shape, the upper and lower portions are formed in parallel with the traveling direction of the tray 20, vertically, It goes without saying that various shapes such as being formed are possible.

  The beam blocking unit 400 is provided as a separate member in the region irradiated with the ion beam on the inner bottom surface of the process chamber 100, or is part of the material modified to have a physical property that is strong against the ion beam or high temperature. Various configurations are possible, such as coating with a material that is strong against ion beams or has high physical properties at high temperatures.

  As a more specific example, the beam blocking unit 400 may be formed of a single member, or as illustrated in FIGS. 2 to 4b, one or more upper plate units 410 that are irradiated with an ion beam. And one or more cooling parts 420 coupled to the bottom surface of the upper plate part 410 to cool the upper plate part 410.

  It is preferable to use a material resistant to an ion beam such as aluminum, aluminum alloy, graphite, carbon reinforced fiber, carbon composite, and SiC. Here, the upper plate portion 410 is more preferably made of a non-metallic material than a metallic material.

  For example, the upper plate portion 410 is made of a metal base material (not shown) such as aluminum or aluminum alloy, a non-metal layer formed on the base material; The coating layer can be included. Here, the base material can be made of a non-metallic material, and the coating layer of the electrically conductive material is preferably a substance containing Si.

  In addition, the upper plate portion 410 may include any one material of graphite and SiC. At this time, the upper plate portion 410 is preferably coated with a coating material containing Si.

  On the other hand, the upper plate part 410 is formed of a member separate from the cooling part 420 described later, and is placed on the cooling part 420 without any connection, or mechanically connected by bolting, welding, or the like. The cooling unit 420 may be combined in various forms.

  Here, when the upper plate portion 410 and the cooling portion 420 are coupled, the upper plate portion 410 extends downward from the bottom edge thereof, and an extension portion is provided so as to surround the side surface of the cooling portion 420. The upper plate part 410 and the cooling part 420 can be coupled by forming the bolt through the extension from the side surface.

  As described above, when the upper plate portion 410 and the cooling portion 420 are coupled through the side surface of the extension portion of the upper plate portion 410, the bolt for coupling the upper plate portion 410 and the cooling portion 420 is not exposed to the ion beam. become. Here, when the bolt is exposed to the ion beam, an evaporation phenomenon occurs in the metal bolt, and there is a problem that the substrate 10 is contaminated.

  On the other hand, the upper plate part 410 and the cooling part 420 can be connected in various forms, and for the firm connection, the upper plate part 410 and the cooling part 420 are connected by bolts, and the bolts are on the upper side. It can be covered with a cap so as not to be exposed.

  That is, as shown in FIGS. 3, 4a and 4b, the upper plate portion 410 is formed with a through hole 414 and coupled to the cooling portion 420 by the bolt 430 so that the bolt 430 is exposed to the upper side. In order to prevent this, the through hole 414 can be covered with a cap portion 415 made of the same material as the upper plate portion 410.

  With the above-described configuration, the upper plate portion 410 and the cooling portion 420 are firmly coupled without exposing the bolts 430, and the upper plate portion 410 can be cooled more efficiently by ion beam irradiation.

  Meanwhile, a plurality of upper plate portions 410 may be provided so as to cover the upper surface of the cooling unit 420, as shown in FIG. 4b.

  If a plurality of upper plate portions 410 are configured as described above, if there is partial damage, only the upper plate portion 410 in the damaged portion needs to be replaced, so that maintenance and repair costs can be reduced. .

  At this time, since the ion beam is exposed to the cooling unit 420 through the connected portions of the plurality of upper plate units 410 and evaporation phenomenon occurs in the metal cooling unit 420 to contaminate the substrate 10, In order to prevent exposure to the ion beam, it is preferable that the steps 411 and 412 are formed in a portion connected to the upper plate portion 410 to be coupled.

  As described above, the steps 411 and 412 are formed and coupled at the portion where the upper plate portion 410 is connected, so that exposure of the ion beam to the cooling unit 420 can be prevented, and damage to the cooling unit 420 can be prevented. become.

  Here, in the configuration in which the step is formed in the portion where the plurality of upper plate portions 410 are combined as described above, the beam blocking unit 400 covers the inner bottom surface of the process chamber 100 as a single blocking member (not shown). Thus, the present invention can also be applied to a case where a plurality of blocking members are provided.

  That is, the beam blocking unit 400 is provided with a plurality of blocking members so as to cover the inner bottom surface of the process chamber 100, and the process chamber 100 is exposed to the ion beam through a portion where the plurality of blocking members are connected. In order to prevent this, the plurality of blocking members may be formed with a step at a portion connected to the combined blocking members.

  The upper surface of the blocking member may be coated with a substance containing Si.

  On the other hand, as described above, the upper plate portion 410 scatters the ion beam irradiated with the plurality of projections and depressions 413 to minimize the temperature rise due to the ion beam irradiation and suppress the evaporation effect. it can.

  In addition to the structure described above, the upper plate 410 may be formed by coating the upper surface of the cooling unit 420 with a substance containing Si.

  The cooling unit 420 is coupled to the bottom surface of the upper plate 410 irradiated with a high-temperature ion beam, and is configured to cool the upper plate 410 heated by the ion beam irradiation. Any configuration can be used.

  At this time, in order to accurately control the cooling unit 420, the upper plate unit 410 is preferably provided with a temperature sensor (not shown) for measuring the temperature. However, the temperature sensor is not necessarily required because it can perform appropriate temperature control through experiments and can perform indirect temperature measurement through internal temperature measurement.

  As an example, as shown in FIGS. 4a and 4b, the cooling unit 420 includes a coolant channel 421 through which a coolant flows, and the coolant channel 421 is connected to a coolant circulation device provided outside. Thus, the upper plate portion 410 may be cooled by circulation.

  With the configuration of the beam blocking unit 400 as described above, when the tray 20 is not present in the irradiation region irradiated with the ion beam, the process chamber 100 is prevented from being directly irradiated to prevent the process chamber 100 from being overheated and evaporated. The substrate can be prevented from being contaminated by the above, and better substrate processing becomes possible.

  Meanwhile, although the beam blocking unit 400 is described as a separate configuration from the process chamber 100, the beam blocking unit 400 forms at least a part of the bottom surface of the process chamber 100 or forms the bottom surface of the process chamber 100. It goes without saying that at least a part of the wall can be formed.

  That is, in forming the wall body forming the bottom surface of the process chamber 100, that is, the low wall portion, various portions such as a part of the beam blocking portion 400 having the above-described configuration are combined. Can be configured.

  The foregoing is only a description of some of the preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be construed as being limited to the embodiments described above, It can be said that all the technical ideas of the present invention described together with the technical ideas of the present invention are included in the scope of the present invention.

1: Substrate processing apparatus (process module)
2: Load lock module 3: Unload lock module 100: Process chamber 300: Ion beam irradiation unit 400: Beam blocking unit

Claims (22)

A process chamber provided with a transfer path for transferring a tray on which one or more substrates are mounted;
When an ion beam generated from an ion beam source is irradiated to an ion beam irradiation region set in the transfer path and the tray is positioned in the ion beam irradiation region, the surface of the substrate is irradiated with the ion beam. An ion beam irradiation unit provided on the upper side of the transfer path;
A beam blocking unit that is provided below the transfer path and prevents the process chamber from being directly irradiated with an ion beam when the tray is not positioned in the ion beam irradiation region;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 1, wherein the beam blocking unit includes a single blocking member. The beam blocking unit is provided with a plurality of blocking members so as to cover the inner bottom surface of the process chamber,
In order to prevent the chamber body from being exposed to the ion beam through a portion where the plurality of blocking members are connected, the plurality of blocking members are formed with a step at a portion where the plurality of blocking members are connected to the combined blocking member. The substrate processing apparatus according to claim 2, wherein:   The beam blocking unit includes one or more upper plate portions irradiated with an ion beam and one or more cooling units coupled to a bottom surface of the upper plate portion to cool the upper plate portion. The substrate processing apparatus according to claim 1. The upper plate portion includes a metal base material, a non-metal layer formed on the base material,
The substrate processing apparatus according to claim 4, further comprising a coating layer of an electrically conductive material coated on the non-metal layer.   The substrate processing apparatus according to claim 4, wherein the upper plate portion includes any one material of aluminum, an aluminum alloy, graphite, a carbon reinforcing fiber, a carbon composite material, and SiC.   The substrate processing apparatus according to claim 6, wherein the upper plate portion is coated with a coating material containing Si. The upper plate part is provided in a plurality so as to cover the upper surface of the cooling part,
In order to prevent the ion beam from being exposed to the cooling unit through a portion where the plurality of upper plate portions are connected, the plurality of upper plate portions are stepped at a portion where the upper plate portion is connected. The substrate processing apparatus according to claim 4, wherein: is formed.   The upper plate portion is formed with a through hole and coupled to the cooling portion by a bolt, and the through hole is formed by a cap portion made of the same material as the upper plate portion in order to prevent the bolt from being exposed to the upper side. The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus is covered.   A mask provided between the ion beam irradiation unit and the transfer path and further having a mask formed with one or more holes so that a part of the ion beam is irradiated onto the surface of the substrate is further provided. The substrate processing apparatus of any one of Claims 1-9.   The beam blocking part is provided between the transfer path and an inner bottom surface of the process chamber, or is provided on an inner bottom surface of the process chamber. The substrate processing apparatus according to item.   The substrate processing apparatus according to claim 1, wherein the beam blocking unit has an upper surface larger than a region irradiated with the ion beam.   The substrate processing apparatus according to claim 1, wherein the upper surface of the beam blocking unit is formed with a large number of irregularities to scatter the irradiated ion beam. The beam blocking unit is
Forming at least part of the bottom surface of the process chamber;
The substrate processing apparatus according to claim 1, wherein at least a part of a wall that forms a bottom surface of the process chamber is formed.   15. The substrate processing apparatus according to claim 14, wherein a plurality of irregularities are formed on the upper surface of the beam blocking unit to scatter the irradiated ion beam. A process module including the substrate processing apparatus according to claim 1;
The tray is coupled to one side of the process module, the internal pressure is alternately converted into atmospheric pressure and vacuum pressure, and a tray on which one or more substrates are seated is transmitted from the outside to transmit the tray to the process module. A load lock module;
An unload lock module coupled to the other side of the process module, the internal pressure is alternately converted into atmospheric pressure and vacuum pressure, the tray is transmitted from the process module and discharged to the outside;
Including substrate processing system.   A mask provided on the ion beam irradiation unit and the transfer path, and further provided with a mask having one or more holes so that a part of the ion beam is irradiated onto the surface of the substrate. Item 17. The substrate processing system according to Item 16.   The substrate processing system according to claim 16, wherein the beam blocking unit is provided between the transfer path and an inner bottom surface of the process chamber, or is provided on an inner bottom surface of the process chamber.   The substrate processing system according to claim 16, wherein the beam blocking unit has a larger upper surface than a region irradiated with the ion beam.   The substrate processing system according to claim 16, wherein a number of irregularities are formed on the upper surface of the beam blocking unit to scatter the irradiated ion beam. The beam blocking unit is
Forming at least part of the bottom surface of the process chamber;
The substrate processing apparatus according to claim 16, wherein at least a part of a wall that forms a bottom surface of the process chamber is formed.   The substrate processing apparatus according to claim 21, wherein a plurality of irregularities are formed on the upper surface of the beam blocking unit to scatter the irradiated ion beam.

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