CN103177924B - Substrate board treatment and the base plate processing system with it - Google Patents
Substrate board treatment and the base plate processing system with it Download PDFInfo
- Publication number
- CN103177924B CN103177924B CN201210336972.9A CN201210336972A CN103177924B CN 103177924 B CN103177924 B CN 103177924B CN 201210336972 A CN201210336972 A CN 201210336972A CN 103177924 B CN103177924 B CN 103177924B
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- Prior art keywords
- ion beam
- substrate
- board treatment
- upper plate
- plate portion
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- 239000000758 substrate Substances 0.000 title claims abstract description 105
- 238000011282 treatment Methods 0.000 title claims abstract description 44
- 238000012545 processing Methods 0.000 title claims abstract description 22
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 106
- 238000012546 transfer Methods 0.000 claims abstract description 49
- 230000000903 blocking effect Effects 0.000 claims abstract description 43
- 230000002265 prevention Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 36
- 238000001816 cooling Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000012783 reinforcing fiber Substances 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 46
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 229940090044 injection Drugs 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/06—Screens for shielding; Masks interposed in the electron stream
- H01J29/07—Shadow masks for colour television tubes
- H01J29/076—Shadow masks for colour television tubes characterised by the shape or distribution of beam-passing apertures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
Abstract
The present invention is to be related to substrate board treatment and the base plate processing system with it, is in more detail that will perform the substrate board treatment and base plate processing system with it of processing substrate on ion beam irradiation to substrate.Substrate board treatment disclosed by the invention, it is characterised in that including：Operation room, is provided with the transfer path that transfer is mounted with the pallet of more than one substrate；Ion beam irradiation portion, it is arranged at the upside in the transfer path, to the ion beam that the ion beam irradiation area illumination being set on the transfer path occurs from ion beam source, so that the pallet is when positioned at the ion beam irradiation region, ion beam is irradiated to substrate surface；Beam blocking unit, is arranged at the downside in the transfer path, so as to when the pallet is not located at the ion beam irradiation region, prevent ion beam from shining directly on operation room.
Description
Technical field
It is in more detail that will perform substrate on ion beam irradiation to substrate the present invention relates to a kind of substrate board treatment
The substrate board treatment for the treatment of and the base plate processing system with it.
Background technology
In the middle formation semiconductor regions such as semiconductor, LCD glass substrate, solar cell substrate, i.e. form pn
The method of joint construction has thermal diffusion method and ion implantation.
But, in the case of injecting impurity by thermal diffusion method, it is deposited with to inject the POCl of impurity3When, due to
Can not be formed and equably adulterated, therefore the operation uniformity can be low, and using POCl3In the case of, after removal evaporation
The operation such as the psg film for being formed as accessory substance on the surface of the substrate and removal side semiconductor construction (Edge isolation) is answered
It is miscellaneous, and whole activity time is elongated, therefore there is a problem of that productivity is low.
In contrast, ion implantation is that ion beam is shone directly on substrate and injected, thus with thermal diffusion method phase
Than, its control becomes easy and can critically inject impurity, therefore, it is widely used in the recent period.
On the other hand, as described above in order to the substrate board treatment to substrate surface irradiation ion is generally, ion beam
Source and the ion beam occurred from ion beam source to the substrate irradiation disposed on the workbench set in closed treatment space, so that
Make the composition of irradiation ion on substrate.
But, conventional substrate board treatment as described above, because only perform ion by single ion beam source shining
Operation is penetrated, therefore can be existed and be restricted on ion exposure pattern, and be difficult the problems of a large amount for the treatment of ion exposures.
Additionally, in order to perform the ion exposure operation of multiple patterns, it is necessary to be performed by multiple substrate board treatments, because
This can have that the space that its treatment complexity, device costliness and device are occupied becomes big.
Additionally, conventional substrate board treatment is in the state of substrate is fixed, moving iron beam forms ion note
Enter, so as to cause, the replacing substrate after ion implanting, the device for the device etc. of moving iron beam become complicated and consumption is a large amount of
Activity time, therefore there is a problem of that productivity is low.
The content of the invention
(technical problem to be solved)
In order to solve problem as described above, it is an object of the invention to provide a kind of substrate board treatment and with it
Base plate processing system, the pallet of substrate is mounted with by transferring to irradiate ion beam to substrate to perform ion exposure operation, by
This raising is productive simultaneously, can prevent operation room from the pollution of the substrate that Evaporation Phenomenon causes occur because of the irradiation of ion beam.
(means of solve problem)
The present invention is created to reach purpose as described above, and the present invention discloses substrate board treatment, including：Work
Sequence room, is provided with the transfer path that transfer is mounted with the pallet of more than one substrate；Ion beam irradiation portion, is arranged at the transfer
The upside in path, to the ion that the ion beam irradiation area illumination being set on the transfer path occurs from ion beam source
Beam, so that the pallet is when positioned at the ion beam irradiation region, ion beam is irradiated to substrate surface；Beam blocking unit, if
The downside in the transfer path is placed in, so that the pallet prevents ion beam when the ion beam irradiation region is not located at
Shine directly on operation room.
The beam blocking unit can be made up of single part.
The beam blocking unit is provided with multiple breaking members to cover the inside bottom surface of the operation room, the multiple
Breaking member is formed with the part that the breaking member with engagement is connected holds poor, so as to prevent the operation room by the multiple
Breaking member connection part and be exposed in ion beam.
The beam blocking unit can include being irradiated to the more than one upper plate portion of ion beam；Be incorporated into the upper plate portion
Basal surface cool down the more than one cooling end of the upper plate portion.
The upper plate portion can include the non-metallic layer formed in the matrix of metal material, described matrix and in the non-gold
The coating of the electrical conductivity material coated on category layer.
The upper plate portion material can be in aluminium, aluminium alloy, graphite, carbon reinforcing fiber, carbon fibre composite and SiC
Any one.
The upper plate portion can carry out coating by the coated substance comprising the Si.
The upper plate portion, is set to multiple to cover the upper surface of the cooling end, the multiple upper plate portion with engagement
Upper plate portion connection part on to be formed with end poor, so as to the part that prevents the cooling end from being connected by the multiple upper plate portion
In ion beam.
The through hole that the upper plate portion is formed by it, is combined by bolt with the cooling end, it is possible to by with upper plate portion
The cap portion of identical material prevents the bolt to be exposed to upside to cover the through hole.
Can be added between the ion beam irradiation portion and the transfer path and be provided with the mask with more than one hole,
So that part ion beam is irradiated on substrate surface.
The beam blocking unit, can be arranged between the inside bottom surface of the transfer path and the operation room, or institute
State on the inside bottom surface of operation room.
The beam blocking unit, can have the upper surface bigger than the ion beam irradiation region.
The upper surface of the beam blocking unit could be formed with it is multiple concavo-convex, so as to the upper table to being irradiated to the beam blocking unit
The ion beam in face is scattered.
The beam blocking unit, at least forms a part for the basal surface of the operation room, or at least forms the composition work
A part for the wall of the basal surface of sequence room.
Additionally, the present invention discloses base plate processing system, including：Process module, including with the substrate for constituting as described above
Processing unit；Load lock module, is incorporated into the side of the process module, is replaced with atmospheric pressure and vacuum pressure by internal pressure
Change to be mounted with the pallet of more than one substrate from external reception, and pallet is communicated in the process module；Unloading lock
Cover half block, is incorporated into the opposite side of the process module, and by internal pressure, with atmospheric pressure and vacuum pressure, alternately conversion comes from described
Process module receives pallet and is discharged to outside.
(The effect of invention)
Substrate board treatment of the invention and the base plate processing system with it, be transfer be mounted with it is more than one
While the pallet of substrate, perform to the ion exposure engineering of substrate, thus improve it is productive simultaneously, in operation room
Added on inwall, particularly basal surface and beam blocking unit is set prevents the direct irradiation of ion beam, therefore with can prevent,
When in the absence of pallet, operation room is depressed in vacuum, occurs the advantage of the pollution of the substrate that evaporation causes because of the irradiation of ion beam.
Additionally, substrate board treatment of the invention and the base plate processing system with it, due to being protected from ion beam
Protect operation room, therefore with extending the life-span of operation room, and with reducing equipment assembly by significantly reducing maintenance cost
This advantage.
Brief description of the drawings
Fig. 1 is the concept map for representing base plate processing system of the invention.
Fig. 2 is the partial plan of pallet movement in the operation room of the substrate board treatment for representing Fig. 1.
Fig. 3 is the plan of of the beam blocking unit set in the operation room of the substrate board treatment for representing Fig. 1.
Fig. 4 a and Fig. 4 b are respectively the sectional views in the section for representing VI-VI direction and B-B directions in Fig. 3.
(description of reference numerals)
1：Substrate board treatment (process module) 2：Load lock module
3：Unloading locking module
100：Operation room 300：Ion beam irradiation portion
400：Beam blocking unit
Specific embodiment
The base plate processing system to substrate board treatment of the invention and with it, is carried out in detail with reference to the accompanying drawings
Ground explanation.
Base plate processing system of the invention, as shown in figure 1, including：Process module 1；Load lock module 2, with reference to
In the side of process module 1；Unloading locking module 3, is incorporated into the opposite side of process module 1.
The process module 1 is the composition for including substrate board treatment described later, and ion exposure work is performed as to substrate
The composition of sequence, can be diversified composition.
The load lock module 2 is to be incorporated into the side of process module 1, by internal pressure with atmospheric pressure and vacuum pressure
Alternately change to be mounted with the pallet 20 of more than one substrate 10 from external reception, and pallet 20 is communicated in process module 1
Composition, and can be varied as above-mentioned composition.
The unloading locking module 3 is the opposite side for being incorporated into process module 1, by internal pressure with atmospheric pressure and vacuum
Alternately conversion to receive pallet 20 and to the composition of outside discharge from process module 1 pressure, and can be many as above-mentioned composition
Plant various.
The unloading locking module 3 is beyond switching to pressure, to be gone back in order to the pallet 20 for terminating operation is discharged to the outside
The cooling for being arranged in process module 1 and cooling down and the substrate 10 disposed on the pallet 20 for coming is passed on from process module 1 can be added
Device.
On the other hand, in the process module 1 inject ion substrate, needed to complete impurity injection process into
Row heat treatment, therefore setting heat treatment module (not shown) can be added, the heat treatment module is incorporated into unloading locking module
3, and to passing on the substrate 10 on the pallet 20 for coming to be heat-treated from unloading locking module 3.
The heat treatment module from Unload module 3 used as to passing on what is come to be laminated with and complete ion in process module 1
The pallet 20 of the substrate 10 of injection, performs the composition of heat treatment, can be diversified composition.
The heat treatment performed as the heat treatment module be according to injection ion after substrate 10 required by condition come
Determine temperature, pressure, heat treatment time etc..
On the other hand, setting buffer module (the first buffer module and the second buffer module) can be added, respectively described
Between load lock module 2 and the process module 1, between the process module 1 and the unloading locking module 3, interim storage is moved
The pallet 20 brought simultaneously makes internal pressure maintain the pressure between atmospheric pressure and the operation pressure of the process module 1.
First buffer module is to maintain between atmospheric pressure and the operation pressure of process module 1 internal pressure, for example,
To maintain the state of the operation pressure of process module 1, receive what is be conducted through the pallet 20 for coming from load lock module 2 and store temporarily
Constitute；Second buffer module is to maintain between atmospheric pressure and the operation pressure of process module 1 internal pressure, for example, to maintain work
The state of the operation pressure of sequence module 1, the composition of pallet is passed on to unloading locking module 3, can be various composition.
Particularly, first buffer module and the second buffer module can be prevented, in load lock module 2 and unloading lock
When pressure conversion in cover half block 3 and pallet exchange slack-off, caused process module does not perform operation and standby etc. delays entirety
The problem of operation.
On the other hand, the load lock module 2 and unloading locking module 3, slow in the first buffer module of setting and second
During die block, (heat treatment module is same for load lock module 2, unloading locking module 3, the first buffer module and the second buffer module
Sample for) on a part for the basal surface of supporting tray 20 can be set and move by rotation multiple transfer rollers 31 of pallet, with
The rotary driving part (not shown) of rotation driving is carried out at least a portion in each transfer roller 31.
On the other hand, the drawing symbol 510,520,530 and 540 not being illustrated in Figure 1 refers respectively to switch each gate
Gate valve.
Hereinafter, substrate board treatment of the invention is described in detail.
As shown in Figure 1 to Figure 4 shown in b, substrate board treatment of the invention, including：Operation room 100, is provided with transfer peace
It is equipped with the transfer path 30 of the pallet 20 of more than one substrate 10；Ion beam irradiation portion 300, is arranged at the upper of transfer path 30
Side, to the ion for being set in the generation from ion beam source (not shown) of the ion beam irradiation area illumination in the transfer path 30
Beam, when the pallet 20 is located at the ion beam irradiation region, ion beam is irradiated to substrate surface；Beam blocking unit 400, is set
In the downside in the transfer path 30, prevent ion beam from shining directly on operation room 100.
Herein, even can be able to be for semiconductor substrate, LCD glass substrate as the substrate 10 of process object
Substrate used for solar batteries.
Particularly, the substrate 10 in substrate board treatment of the invention as processing substrate object is preferably solar energy
Battery silicon substrate, now, the ion beam irradiated by ion beam irradiation portion 300 can turn into and form one on the surface of substrate 10
The ion of semiconductor regions above.
Additionally, when the processing substrate object is silicon for solar cell substrate, in the semiconductor that the surface of substrate 10 is formed
Region can be selective emitter (Selective Emitter) or the n-type semiconductor region and p-type semiconductor that form IBC
Region.
The pallet 20, as the composition for loading more than one substrate 10 and transfer, can be diversified composition.
Can be any composition as long as the pallet 20 can stably support the material of substrate 10 as one.
Can be any composition as long as the pallet 20 can stably support the material of substrate 10 as one,
Flat shape can be straight quadrangle shape, and now substrate 10 can be by straight dimetric n × m arrangements placement.
The conduct of operation room 100, the ring of ion can be injected to be formed by ion beam irradiation portion 300 to substrate 10
The composition in the transfer path 30 of border and formation pallet 20, can be various composition.
Used as one, its composition can include for the operation room 100：Mutually removably combine and form closed treatment
The chamber bodies 110 and upper cap 120 of space S.
The more than one gate 111,112 in order that pallet 20 comes in and goes out is could be formed with the chamber bodies 110,
And for the exhaust in control process space S and Stress control, can be connected with gas extraction system.Here, first gate
111, in the one end in transfer path 30, can import the formation of pallet 20；Second gate 112, can in the other end in transfer path 30
With the formation of discharge tray 20.
On the other hand, the transfer path 30 for being set in the chamber bodies 110 is used as the transfer pallet in operation room 100
20 composition, can be any composition as long as can transfer the composition of pallet 20 in operation room 100.
As shown in figure 1, the transfer path 30, can be along the first gate 111 being formed in chamber bodies 110
And the second gate 112 transfers the composition of pallet 20, the composition as one example can include：Multiple transfer roller 31, configuration exists
Between first gate 111 and the second gate 112, the part basal surface of supporting tray 20 simultaneously transfers pallet 20 by rotating；Rotation
Turn drive division (not shown), rotation driving is carried out at least a portion in transfer roller 31.
Herein, the transfer path 30 refers to, the transfer path of the pallet 20 in operation room 100, wherein not needing institute
It is all physical make-up to have, and the part such as roller is configured to physical make-up.
Additionally, ion beam irradiation region is set in the transfer path 30, when pallet 20 is transplanted on ad-hoc location, to peace
The irradiation ion beam of substrate 10 put.
The ion beam source forms the composition of ion beam as ionizable gas is ionized, and can be many
The composition of sample.Herein, the ion beam source can be connected with gas supply device, thus come routinely to provide ionizable
Gas.
The ion beam irradiation portion 300 is connected with ion beam source and is arranged in treatment space S and transfers the upper of path 30
Side, the ion beam irradiation that will occur in ion beam source to the surface of substrate 10 being transplanted on along transfer path 30.
Particularly, the ion beam irradiation portion 300, guide ion beam source in occur ion beam while, control from
The intensity and concentration of beamlet, so as to form the irradiated region of the surface ion of suitable substrate 10 injection on the surface of substrate 10 being transplanted on
Domain.
Herein, the ion beam irradiation portion 300 is, compared with to the transfer WBR ion beam of path 30 but only to part
Region, i.e. the composition of ion beam is irradiated in ion beam irradiation region.
On the other hand, the operation room 100 can be in the exposure pathways of ion beam, i.e. ion beam irradiation portion 300 and pallet
Between 20 transfer path 30, add and the mask 310 with more than one hole is set, so that a part for ion beam is irradiated to
The surface of substrate.
The conduct of the mask 310, being arranged on to be irradiated on the exposure pathways of ion beam, and ion is blocked in subregion
The irradiation of beam, makes at least only to inject the composition of ion on the surface of substrate 10 in subregion, can be diversified composition.
Used as one, the mask 310 can include more than one opening portion, and only opening can shine with the surface of substrate 10
Penetrate the corresponding part in subregion of ion.
Additionally, the material of the mask 310, it is contemplated that the continuation irradiation of ion beam, stabilization is preferably used and with resistance to
It is hot such as the material of graphite.
Additionally, the mask 310 can be supported and set by the supporting frame 340 being arranged in operation room 100.
On the other hand, in substrate board treatment of the invention, in the ion beam irradiation region transferred in path 30
There is pallet-free 20 unrelated, ion beam is continuation irradiation.
Now, when there is pallet 20 in the ion beam irradiation region, because forming the ion beam irradiation to substrate 10
Operation, so as to when not existing in the absence of what problem, but pallet 20, operation room 100 can be irradiated to by transferring path 30
On inwall.
Additionally, the operation room 100 is when the ion beam for having high temperature shines directly into inwall, by with operation room 100
The thermally-induced influence to operation, the deformation of operation room 100, the Evaporation Phenomenon of the operation room 100 of vacuum pressure are crossed, so as to can lead
Cause the operations such as generation substrate surface pollution unstable or damage operation room 100 and shorten the life-span of operation room 100 or need
The problems such as safeguarding.
Therefore, substrate board treatment of the invention, it is characterised in that also prevent ion including beam blocking unit 400
Beam is shone directly on operation room 100.
Additionally, the beam blocking unit 400 conduct, is arranged at the downside in transfer path 30 to prevent ion beam from shining directly into
The composition of operation room 100, can be arranged between transfer path 30 and the inside bottom surface of operation room 100, or as shown in figure 1,
It is arranged at the inside bottom surface of operation room 100.
Now, the beam blocking unit 400, as long as the downside for being disposed on transferring path 30 prevents ion beam from directly shining
The composition of operation room 100 is penetrated, can be any composition.
Additionally, the beam blocking unit 400 is in order to be substantially prevented from ion beam irradiation to operation room 100, preferably with than from
The bigger upper surface of the irradiation area of beamlet.
Additionally, the upper surface of the beam blocking unit 400, as shown in Fig. 1, Fig. 3 and Fig. 4 b, can form multiple concavo-convex 413,
So as to be scattered to the ion beam being irradiated to.
The multiple concavo-convex 413, the ion beam that can be emitted onto beam blocking unit 400 is scattered such that it is able to minimum
The temperature for changing the beam blocking unit 400 that ion beam irradiation causes rises and can contain evaporation effect.
The multiple concavo-convex 413, as long as can be any composition with the composition of scattered ion(s) beam, its upper end be
In good image plane is straight dimetric beam blocking unit 400 the composition linear parallel on one side with it as, or can have circular cone,
The diversified images such as pyramid, big circular cone, big pyramid, hemispherical.
For example, as shown in Figure 4 b, the multiple concavo-convex 413, can have pyramid as.
At the same time, the multiple concavo-convex 413 upper end be in good image plane is straight dimetric beam blocking unit 400 with
Its on one side parallel composition linear as when, may be formation or the oblique line parallel or vertical with the direction that pallet 20 advances
Varied images such as formation are certain.
Additionally, the beam blocking unit 400, the area that can be arrived in the ion beam irradiation on the inside bottom surface of operation room 100
Domain is set by other parts, or partly upgraded is resistance to ion beam or resistant to elevated temperatures physical property, or by with resistance to ion beam or resistance to height
Physical property matter coatings of temperature etc., may be configured as varied.
Used as more specific example, the beam blocking unit 400 can be made up of single part, or such as Fig. 2 to Fig. 4 b
It is shown, can include being irradiated to the more than one upper plate portion 410 and the basal surface for being incorporated into upper plate portion 410 of ion beam, come cold
But the more than one cooling end 420 of upper plate portion 410.
It can be aluminium, aluminium alloy, graphite, carbon reinforcing fiber (carbon that the upper plate portion 410 is preferably used
Reinforced fiber), the material of the resistance to ion beam such as carbon fibre composite (carbon composite) and SiC.Herein,
The upper plate portion 410, compared to metal material, more preferably uses non-metallic material.
For example, the upper plate portion 410 can include, on the matrix (not shown) of the metal material of aluminium, aluminium alloy etc., matrix
The non-metallic layer and coating of formation on non-metallic layer, the coating with electrical conductivity.Herein, described matrix can also use non-
Metal material, the coating of electrical conductivity material is preferably the material comprising Si.
Additionally, the upper plate portion 410, can have any one material in graphite and SiC.Now, the upper plate portion
410 preferably carry out coating by the coated substance comprising Si.
On the other hand, the upper plate portion 410 is that other part is constituted with cooling end described later, so as in cooling end
Pass through mechanical bonds such as bolt, welding etc. without any placement in combination or with it with it on 420, can be with cooling end 420 with many
Plant various combination of shape and state.
Herein, when the upper plate portion 410 is combined with cooling end 420, the upper plate portion 410 its basal surface marginal position to
Downside extends, and forms extension to wrap up the side of cooling end 420, and make upper plate portion in side insertion extension by bolt
410 are combined with cooling end 420.
As described above, when upper plate portion 410 is combined with cooling end 420 by the side of the extension of upper plate portion 410, in order to
It is not exposed in ion beam with reference to the bolt of upper plate portion 410 and cooling end 420.Here, when bolt is exposed to ion beam, metal
There is evaporation (evaporation) phenomenon on the bolt of material, so as to cause the problem for polluting substrate 10 occur.
On the other hand, the upper plate portion 410 and cooling end 420 can be combined upper with various combination of shape and state by bolt
Plate portion 410 and cooling end 420 are formed it into while firm combination, by covering cap portion bolt can be made not expose
To upside.
That is, as shown in Fig. 3, Fig. 4 a and Fig. 4 b, the upper plate portion 410 can form through slot 414, and by bolt 430
It is combined with cooling end 420, it is possible to prevented to cover the through slot 414 by the cap portion 415 with the identical material of upper plate portion 410
Only the bolt 430 is exposed to upside.
By constituting as described above, while bolt 430 can not be exposed, upper plate portion 410 and cooling end 420 is set firmly to tie
Close, it is possible thereby to more effectively cool down by the upper plate portion 410 of ion beam irradiation.
On the other hand, the upper plate portion 410 can be that the setting of covering cooling end 420 upper surface is multiple as shown in Figure 4 b.
When upper plate portion 410 as described above is made up of multiple, when there is partial injury, it is only necessary to replace the upper plate of damaged portion
Portion 410, it is possible thereby to reduce maintenance cost.
Now, the part that ion beam is connected by the multiple upper plate portion 410, leaks to cooling end 420, so as in metal
There is Evaporation Phenomenon on the cooling end 420 of material, and then substrate 10 can be polluted, thus in order to prevent cooling end 420 be exposed to from
Beamlet, preferably forms step 411,412 in the part that the upper plate portion 410 with engagement is connected.
As noted previously, as multiple upper plate portions 410 form step 411,412 to engage on the part of connection, therefore can
To prevent cooling end 420 in ion beam, and then prevent the damage of cooling end 420.
Herein, as described above, forming the composition of step on the part of multiple engagements of upper plate portion 410, in beam blocking unit 400 not
It is, by upper plate portion and cooling end, but to be made up of the inside bottom surface of single breaking member (not shown) covering process room 100
When, in the case of being set by multiple breaking members, can similarly be applicable.
That is, described beam blocking unit 400, sets the inside bottom surface that multiple breaking members come covering process room 100, multiple resistance
Disconnected part can form step to prevent operation room 100 from passing through multiple breaking members with the coupling part of the breaking member for engaging
Coupling part in the ion beam.
Additionally, the upper surface of the breaking member can be by the matter coatings comprising Si.
On the other hand, as described above, the upper plate portion 410 can form multiple concavo-convex 413, so as to the ion being irradiated to
Beam is scattered and rise and contain evaporation effect minimizing the temperature caused by ion beam irradiation.
At the same time, in addition to construction as described above, the upper surface of cooling end 420 can be by wrapping for the upper plate portion 410
Matter coatings containing Si are formed.
The conduct of the cooling end 420, is incorporated into the basal surface of the upper plate portion 410 of the ion beam for being irradiated to high temperature, and cooling is logical
Cross ion beam irradiation and the composition of heated upper plate portion 410, can be to appoint as long as the composition of upper plate portion 410 can be cooled down
What composition.
Now, in order to control the cooling end 420 exactly, the temperature for measuring its temperature is preferably set in upper plate portion 410
Sensor (not shown).But, due to suitably temperature control can be realized by experiment, and can realize surveying internal temperature
The indirect temperature measurement of amount, therefore the temperature sensor, it is not necessary to composition.
Used as one, as shown in Fig. 4 a and Fig. 4 b, it is internally formed the refrigerant for flowing refrigerant to the cooling end 420
Stream 421, refrigerant flow path 421 is connected with the refrigerant cycle apparatus for being arranged at outside, and upper plate portion is cooled down by circulating
410 composition.
As described above, by the composition of beam blocking unit 400, when not existing 20 in the irradiation area of ion beam irradiation, preventing
Only prevent from the overheat of operation room 100 to the direct irradiation of operation room 100 to prevent the caused pollution to substrate of evaporation, thus
Better processing substrate can be realized.
On the other hand, although the beam blocking unit 400 is illustrated with the composition independent with operation room 100, beam
Blocking unit 400 no doubt can at least basal surface of formation process room 100 a part, or at least formed, constitute operation room 100
A part for the wall of basal surface.
That is, the wall of the basal surface of operation room 100 is constituted, i.e. form bottom table wall and there is the beam for constituting as described above
The state that a part for blocking unit 400 is combined is constituted, and can be diversified composition.
These are only the explanation carried out according to a part for attainable preferred embodiment of the invention, it is well known that this hair
Bright scope should be construed to be not limited to above-described embodiment, and the scope of the present invention should be construed to include the present invention of described above
Technical thought and its related technical thought of main idea.
Claims (17)
1. a kind of substrate board treatment, it is characterised in that including：
Operation room, is provided with the transfer path that transfer is mounted with the pallet of more than one substrate；
Ion beam irradiation portion, is arranged at the upside in the transfer path, to the ion beam irradiation area for being set in the transfer path
The ion beam occurred from ion beam source is irradiated in domain, so that the pallet is when positioned at the ion beam irradiation region, to base
Plate surface irradiates ion beam；
Beam blocking unit, is arranged at the downside in the transfer path, so that the pallet be not located at the ion beam irradiation area
During domain, prevent ion beam from shining directly on operation room；
The upper surface of the beam blocking unit be formed with it is multiple concavo-convex, so as to the ion beam to being irradiated to the beam blocking unit upper surface
It is scattered.
2. substrate board treatment according to claim 1, it is characterised in that
The beam blocking unit is made up of single breaking member.
3. substrate board treatment according to claim 1, it is characterised in that
The beam blocking unit is provided with multiple breaking members to cover the inside bottom surface of the operation room,
The multiple breaking member is formed with the part that the breaking member with engagement is connected holds poor, and then prevents the operation
Part that room body is connected by the multiple breaking member and be exposed in ion beam.
4. substrate board treatment according to claim 1, it is characterised in that
The beam blocking unit includes being irradiated to the more than one upper plate portion of ion beam, and the basal surface for being incorporated into the upper plate portion
And cool down the more than one cooling end of the upper plate portion.
5. substrate board treatment according to claim 4, it is characterised in that
The upper plate portion includes the non-metallic layer formed in the matrix of metal material, described matrix and is coated on the non-metallic layer
Electrical conductivity material coating.
6. substrate board treatment according to claim 4, it is characterised in that
The material of the upper plate portion is any in aluminium, aluminium alloy, graphite, carbon reinforcing fiber, carbon fibre composite and SiC
One.
7. substrate board treatment according to claim 4, it is characterised in that
The upper plate portion is carried out coating by the coated substance comprising Si.
8. substrate board treatment according to claim 4, it is characterised in that
The upper plate portion, is set to multiple to cover the upper surface of the cooling end,
The multiple upper plate portion is formed with the part that be connected of upper plate portion with engagement holds poor, so as to prevent the cooling end by
The part of the multiple upper plate portion connection and be exposed in ion beam.
9. substrate board treatment according to claim 4, it is characterised in that
The through hole that the upper plate portion is formed by it, is combined by bolt with the cooling end, and by with upper plate portion identical material
Cap portion cover the through hole, so as to prevent the bolt to be exposed to upside.
10. the substrate board treatment described in any one in claim 1 to 9, it is characterised in that
The beam blocking unit, is arranged between the inside bottom surface of the transfer path and the operation room, or is arranged at described
On the inside bottom surface of operation room.
Substrate board treatment described in 11. any one in claim 1 to 9, it is characterised in that
The beam blocking unit, with the upper surface bigger than the ion beam irradiation region.
Substrate board treatment described in 12. any one in claim 1 to 9, it is characterised in that
The beam blocking unit,
A part for the basal surface of the operation room is at least formed,
Or at least form a part for the wall of the basal surface for constituting the operation room.
A kind of 13. base plate processing systems, it is characterised in that including：
Process module, including the substrate board treatment described in any one in claim 1 to 9；
Load lock module, is incorporated into the side of the process module, is alternately changed with atmospheric pressure and vacuum pressure by internal pressure
To be mounted with the pallet of more than one substrate from external reception, and pallet is communicated in the process module；
Unloading locking module, is incorporated into the opposite side of the process module, is alternately turned with atmospheric pressure and vacuum pressure by internal pressure
Bring and receive pallet from the process module and discharged to outside.
14. base plate processing systems according to claim 13, it is characterised in that
Added between the ion beam irradiation portion and the transfer path and be provided with the mask with more than one hole, so that portion
Beamlet is separated to be irradiated on substrate surface.
15. base plate processing systems according to claim 13, it is characterised in that
The beam blocking unit, is arranged between the inside bottom surface of the transfer path and the operation room, or is arranged at described
On the inside bottom surface of operation room.
16. base plate processing systems according to claim 13, it is characterised in that
The beam blocking unit, with the upper surface bigger than the ion beam irradiation region.
17. base plate processing systems according to claim 13, it is characterised in that
The beam blocking unit,
A part for the basal surface of the operation room is at least formed,
Or at least form a part for the wall of the basal surface for constituting the operation room.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0141228 | 2011-12-23 | ||
| KR1020110141228A KR101769493B1 (en) | 2011-12-23 | 2011-12-23 | Substrate processing apparatus and substrate processing system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103177924A CN103177924A (en) | 2013-06-26 |
| CN103177924B true CN103177924B (en) | 2017-06-09 |
Family
ID=48637705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210336972.9A Expired - Fee Related CN103177924B (en) | 2011-12-23 | 2012-09-12 | Substrate board treatment and the base plate processing system with it |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6190579B2 (en) |
| KR (1) | KR101769493B1 (en) |
| CN (1) | CN103177924B (en) |
| TW (1) | TWI540662B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766877A (en) * | 2018-04-19 | 2018-11-06 | 中国科学院上海应用物理研究所 | A kind of preparation method of the material with periodic surface potential gradient |
| US20220028707A1 (en) * | 2020-07-21 | 2022-01-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Warm wafer after ion cryo-implantation |
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- 2012-09-12 CN CN201210336972.9A patent/CN103177924B/en not_active Expired - Fee Related
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| JPH03269940A (en) * | 1990-03-19 | 1991-12-02 | Hitachi Ltd | Manufacture of ion implantation device and semiconductor integrated circuit device thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201327706A (en) | 2013-07-01 |
| JP2013134986A (en) | 2013-07-08 |
| TWI540662B (en) | 2016-07-01 |
| KR20130073401A (en) | 2013-07-03 |
| CN103177924A (en) | 2013-06-26 |
| JP6190579B2 (en) | 2017-08-30 |
| KR101769493B1 (en) | 2017-08-30 |
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