JP2013131628A - Substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To heat gas to a setting value of a final target temperature more reliably.SOLUTION: A substrate processing device 1 comprises: a gas emission part 51; a gas supply pipe 52 that is a gas passage for connecting a gas supply part and the gas emission part 51; a final heating part 63 provided near the gas emission part 51 in the gas passage and heating the gas in accordance with a setting value of a final target temperature; and intermediate heating parts 61, 62 provided between the final heating part 63 and the supply part in the gas passage and heating the gas in accordance with a setting value of an intermediate target temperature lower than the final target temperature. In processing a substrate 9, when setting of at least one of a parameter group of a type, a flow rate and a final target temperature of the gas emitted from the gas emission part 51 is changed, the setting value of the intermediate target temperature is changed on the basis of the changed parameter group setting. Thereby, the gas can be more reliably heated to the setting value of the final target temperature at a final heating part 63.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  Conventionally, a substrate processing that performs processing such as drying of a substrate by ejecting the heated gas into the chamber by providing a heating unit in the gas flow path connecting the gas supply unit and the gas ejection unit in the chamber. An apparatus is used (for example, see Patent Documents 1 and 2).

Japanese Patent Laid-Open No. 2002-367952 JP 2009-4694 A

  By the way, when a gas heated to a high temperature is ejected into the chamber, it is conceivable to provide a plurality of heating units in series in the gas flow path. In such a substrate processing apparatus, other types of gases having different specific heats are available. When the gas is ejected or the gas flow rate is changed, the gas ejected from the gas ejection section may not be heated to the desired final target temperature.

  The present invention has been made in view of the above problems, and an object thereof is to more reliably heat a gas to a set value of a final target temperature in a final heating unit.

  The invention according to claim 1 is a substrate processing apparatus, wherein a chamber in which a substrate is disposed, a gas ejection portion that ejects gas into the chamber, a supply portion of the gas, and the gas ejection portion, A gas flow path for connecting the gas flow path, a flow rate adjusting section for adjusting the flow rate of the gas in the gas flow path, and the gas flow path in the vicinity of the gas ejection section. A final heating unit for heating in accordance with a set value of a target temperature, and the gas flow path provided between the final heating unit and the supply unit, and the gas flowing through the gas flow path from the final target temperature An intermediate heating unit for heating in accordance with the set value of the lower intermediate target temperature, and in the processing for the substrate in the chamber, the type of gas ejected from the gas ejection unit, the flow rate of the gas, and the final target temperature That if the at least one setting parameter group is changed, and a control unit for changing the setting value of the intermediate target temperature based on the setting of the parameter group after change.

  Invention of Claim 2 is the substrate processing apparatus of Claim 1, Comprising: The said control part respectively has the some combination of the setting of the said parameter group, and the some setting value of the said intermediate | middle target temperature. The set value of the intermediate target temperature is changed by referring to the associated reference table.

  A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the control is performed when at least one setting of the parameter group is changed during processing of the substrate in the chamber. The unit changes the set value of the intermediate target temperature based on the setting of the changed parameter group obtained from the recipe information indicating the content of the process.

  A fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein a plurality of heating units including the final heating unit and the intermediate heating unit are connected in series in the gas flow path. A vapor generating unit that generates an organic solvent vapor is provided between two adjacent heating units of the plurality of heating units, and the gas from the supply unit supplies the vapor to the chamber. It is a carrier gas to be carried, and in the plurality of heating units, the set value of the target temperature becomes higher as it is closer to the chamber on the gas flow path, and the boiling point of the organic solvent is the set value in the two adjacent heating units. Between.

  According to the present invention, by changing the set value of the intermediate target temperature based on the setting of the changed parameter group, it is possible to more reliably heat the gas to the set value of the final target temperature in the final heating unit. it can.

  In the invention of claim 2, the set value of the intermediate target temperature can be easily changed. In the invention of claim 3, even when the setting of the parameter group is changed during the process, the gas can be more reliably heated to the set value of the final target temperature in the final heating unit. In the invention of claim 4, condensation of vapor in the gas channel can be suppressed.

It is a figure which shows the structure of a substrate processing apparatus. It is a figure which shows the flow of the operation | movement which processes a board | substrate. It is a figure which shows the temperature of the gas in each position of the gas flow path of the substrate processing apparatus of a comparative example.

  FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 includes a control unit 10 that controls each component of the substrate processing apparatus 1 and a chamber 2 in which processing of a disk-shaped silicon substrate 9 (hereinafter simply referred to as “substrate 9”) is performed. And an openable / closable cover 21 is provided at the top of the chamber 2. Inside the chamber 2, a processing tank 3 for storing a predetermined processing liquid and an elevating unit 4 for elevating the substrate 9 in the chamber 2 are provided. In the processing tank 3, a plurality of processing liquid nozzles 31 for supplying a processing liquid and a discharge valve 32 attached to the discharge port of the processing tank 3 are provided. The processing liquid nozzle 31 is connected to a processing liquid supply unit, and the discharge valve 32 is connected to the drainage processing unit via a discharge pipe.

  The elevating unit 4 includes a plurality of claw portions 41 that are long in a direction perpendicular to the paper surface of FIG. 1 (hereinafter also referred to as “front-rear direction”), and ends of the plurality of claw portions 41 are fixed. It has a plate-like support body 42 extending upward from the fixed position, and an elevating mechanism (not shown) that moves the support body 42 in the vertical direction of FIG. In the elevating unit 4, the plurality of upright substrates 9 (that is, the plurality of substrates 9 aligned in the front-rear direction) arranged in parallel with each other are supported from below by the plurality of claw portions 41, and the plurality of substrates are supported by the elevating mechanism. 9 is a position between the liquid treatment position in the treatment tank 3 (position indicated by a two-dot chain line in FIG. 1) and the gas treatment position above the treatment tank 3 (position indicated by a solid line in FIG. 1). Move with.

  Inside the chamber 2, a plurality of (two in FIG. 1) gas ejection portions 51 that eject gas toward the plurality of substrates 9 at the gas processing position are further provided. In each gas ejection part 51, a plurality of ejection ports are arranged in the front-rear direction, and the gas can be ejected approximately uniformly to the plurality of substrates 9. Each gas ejection part 51 is connected to the nitrogen gas supply part 53 via the gas supply pipe 52 which is a gas flow path. Specifically, the gas supply pipe 52 has two supply pipes 521 (hereinafter referred to as “branch supply pipes 521”) branched at a branch point 520 in the vicinity of the gas ejection portion 51, and the tip of each branch supply pipe 521. Is connected to the gas ejection part 51. The gas supply pipe 52 further includes a supply pipe 522 (hereinafter referred to as “main supply pipe 522”) that connects the branch point 520 and the nitrogen gas supply unit 53.

  Each branch supply pipe 521 is provided with a heating section 63 (for example, a heater having a heating wire, the same applies hereinafter) that heats the gas flowing through the gas supply pipe 52 immediately before the gas ejection section 51. The main supply pipe 522 between the nitrogen gas supply section 53 and the branch point 520 is provided with two heating sections 61 and 62, and the gas flowing through the gas supply pipe 52 is also in each of the heating sections 61 and 62. Heated. Focusing on only one gas ejection part 51, a plurality of heating parts 61 to 63 are provided in series in the gas flow path connecting the gas ejection part 51 and the nitrogen gas supply part 53.

  Each of the heating units 61 to 63 includes gas temperature measuring units 612 and 622 that measure the temperature of the gas on the heating unit main bodies 611, 621, and 631 and on the downstream side (gas ejection unit 51 side) of the heating unit main bodies 611, 621, and 631. 632 and surface temperature measuring units 613, 623, 633 for measuring the surface temperatures of the heating unit main bodies 611, 621, 631. Each of the heating units 61 to 63 has an individual control unit for heating control, and the measurement values of the gas temperature measurement units 612, 622, and 632 and the target temperature set for the heating units 61 to 63 are set. Feedback control (preferably PID control) of the heating unit main bodies 611, 621, 631 is performed based on the deviation from the value. Thereby, in each heating part 61-63, gas is heated according to the setting value of target temperature. In addition, in surface temperature measurement part 613, 623, 633, abnormalities, such as runaway of heating parts 61-63, are detected.

  In the following description, the heating unit 63 provided in the vicinity of the gas ejection unit 51 is also referred to as a final heating unit 63, and the heating units 61 and 62 provided between the final heating unit 63 and the nitrogen gas supply unit 53 are respectively first. Also referred to as intermediate heating unit 61 and second intermediate heating unit 62. Further, the target temperature in the final heating unit 63 is called a final target temperature, and the target temperature in the intermediate heating units 61 and 62 is called an intermediate target temperature. As will be described later, in the plurality of heating units 61 to 63, the set value of the target temperature is higher as it is closer to the chamber 2, so the set value of the intermediate target temperature in the second intermediate heating unit 62 is higher than the set value of the final target temperature. The set value of the intermediate target temperature in the first intermediate heating unit 61 is lower than the set value of the intermediate target temperature in the second intermediate heating unit 62.

  In the main supply pipe 522, a valve 541 is provided between the two intermediate heating units 61 and 62. The gas supply pipe 52 further includes two auxiliary supply pipes 523 and 524. One end of one auxiliary supply pipe 523 is connected to the main supply pipe 522 at a position between the second intermediate heating section 62 and the valve 541, and at a position between the valve 541 and the first intermediate heating section 61. One end of the other auxiliary supply pipe 524 is connected. The other ends of the two auxiliary supply pipes 523 and 524 are connected to a vapor generation unit 71 that generates an organic solvent vapor. Thus, the steam generation part 71 is provided between the two adjacent intermediate heating parts 61 and 62. The steam generation unit 71 includes a storage tank 711 that stores an organic solvent (liquid), and a solvent heating unit 712 that heats the organic solvent in the storage tank 711. In this embodiment, IPA (isopropyl alcohol) is used as the organic solvent. The steam generating unit 71 may generate steam of other organic solvents such as HFE (hydrofluoroether), ethanol, methanol, and the like.

The auxiliary supply pipe 524 is provided with a valve 542, which closes the valve 542 and opens the valve 541, so that nitrogen is supplied from the nitrogen gas supply section 53 to the gas ejection section 51 via the main supply pipe 522 and the branch supply pipe 521. Gas (N ₂ ) is supplied. Further, by opening the valve 542 and closing the valve 541, nitrogen gas is introduced into the steam generation unit 71, and the IPA vapor together with the nitrogen gas, the auxiliary supply pipe 523, the main supply pipe 522, and the branch supply pipe 521. To be supplied to the gas ejection part 51. When supplying the IPA vapor to the gas ejection unit 51, the nitrogen gas from the nitrogen gas supply unit 53 serves as a carrier gas that carries the vapor in the vapor generation unit 71 to the chamber 2. In this case, the steam generation unit 71 may be regarded as a gas supply unit. Actually, the valves 541 and 542 can finely adjust the opening degree (opening rate), and the valves 541 and 542 serve as a flow rate adjusting unit that adjusts the flow rate of the gas in the gas flow path. The gas supply pipe 52 is also provided with a flow meter (not shown) for measuring the gas flow rate. Of course, a valve as a flow rate adjusting unit may be provided separately from the valves 541 and 542.

  In the control unit 10, in the process for the substrate 9 in the chamber 2, a plurality of combinations of parameter group settings using the type of gas ejected from the gas ejection unit 51, the flow rate of the gas and the final target temperature as parameter groups, A reference table 101 that associates a plurality of set values of the intermediate target temperature with each other is prepared in advance. Then, the set value of the intermediate target temperature is designated by referring to the reference table 101 using the actual parameter group settings. The parameter group may include other items. The generation of the reference table 101 will be described later.

  Next, the operation | movement which processes the board | substrate 9 in the substrate processing apparatus 1 is demonstrated with reference to FIG. In this operation example, the substrate 9 is dried in the substrate processing apparatus 1. In the substrate processing apparatus 1, a plurality of recipe information indicating the contents of a plurality of types of processing for the substrate 9 is prepared in advance, and one recipe information (hereinafter, “ "Selected recipe information") is selected (step S11). Subsequently, the cover 21 of the chamber 2 is opened, and a plurality of substrates 9 to be processed are carried into the chamber 2 by an external transport mechanism and are placed on the plurality of claw portions 41 located near the upper portion of the processing tank 3. It is mounted (step S12). The position of the substrate 9 delivered on the claw portion 41 coincides with the gas processing position, and the gas processing position is also the delivery position of the substrate 9. After the substrate 9 is carried in, the cover 21 of the chamber 2 is closed.

  At this time, the inside of the chamber 2 is in a state in which the nitrogen gas heated to about 150 ° C. by the final heating unit 63 is gently ejected from the gas ejection unit 51. Specifically, the opening degree of the valve 541 is adjusted with the valve 542 closed so that nitrogen gas is ejected from the gas ejection part 51 at a flow rate of 10 liters per minute, for example. The final target temperature in the final heating unit 63 is set to 150 ° C. Further, the set value of the intermediate target temperature is set based on the setting of the parameter group (that is, the type of gas to be ejected, the flow rate of the gas and the final target temperature), and the intermediate target in the first intermediate heating unit 61 is set. The set value of the temperature is 40 ° C., and the set value of the intermediate target temperature in the second intermediate heating unit 62 is 80 ° C. In the following explanation, the type of gas ejected from the gas ejection part 51 is nitrogen gas, the flow rate of the gas is 10 liters per minute, and the setting of the parameter group in which the final target temperature is 150 ° C. is the standby setting. Call.

  In the treatment tank 3, pure water is stored as a treatment liquid, and the plurality of substrates 9 are lowered by the elevating unit 4 and placed at the liquid treatment position in the treatment liquid (step S13). That is, the entirety of the plurality of substrates 9 is immersed in the processing liquid, and the substrate 9 is kept wet. In the control unit 10, the setting of the parameter group is changed based on the selected recipe information, and each configuration is controlled according to the setting. Specifically, the valve 541 is closed, and the opening degree of the valve 542 is adjusted in accordance with the set value of the gas flow rate, so that the IPA vapor (including nitrogen gas as a carrier gas) is, for example, It is ejected from the gas ejection part 51 at a flow rate of 100 liters per minute (step S14). The set value of the final target temperature in the final heating unit 63 remains at 150 ° C. Further, the set value of the intermediate target temperature is changed by referring to the reference table 101 using the changed parameter group settings (step S15). Here, the set value of the intermediate target temperature in the first intermediate heating unit 61 is changed to 50 ° C., and the set value of the intermediate target temperature in the second intermediate heating unit 62 is changed to 100 ° C. Thereby, in the chamber 2, the IPA vapor heated to about 150 ° C. by the final heating unit 63 is jetted out from the gas jetting unit 51. In principle, parameters such as a time constant in the heating control of each heating unit 61 to 63 are not changed.

  When the IPA vapor is filled in the chamber 2 after a predetermined time has elapsed from the start of the IPA vapor injection, the plurality of substrates 9 are raised by the elevating unit 4 and placed at the gas processing position outside the processing liquid (step S16). . Thereby, the vapor | steam of IPA condenses on the surface of the board | substrate 9, and the pure water adhering to the said surface is substituted by IPA. The processing liquid in the processing tank 3 is discharged through the discharge valve 32.

  Subsequently, the setting of the parameter group is changed based on the selected recipe information, and each configuration is controlled in accordance with the changed setting. Specifically, the valve 542 is closed and the opening degree of the valve 541 is adjusted. Thereby, the jet of IPA vapor is stopped, and nitrogen gas is jetted from the gas jet part 51 at a flow rate of 150 liters per minute, for example (step S17). At this time, the set value of the final target temperature in the final heating unit 63 remains at 150 ° C. Further, the set value of the intermediate target temperature is changed by referring to the reference table 101 using the changed parameter group settings (step S18). Here, the set value of the intermediate target temperature in the first intermediate heating unit 61 is changed to 60 ° C., and the set value of the intermediate target temperature in the second intermediate heating unit 62 is changed to 120 ° C. Thereby, in the chamber 2, the nitrogen gas heated to about 150 ° C. by the final heating unit 63 is ejected vigorously from the gas ejection unit 51. In the substrate processing apparatus 1, the inside of the chamber 2 is decompressed by a decompression mechanism (not shown) connected to the chamber 2. As a result, IPA adhering to the surface of the substrate 9 is more reliably removed.

  When the ejection of nitrogen gas and the decompression in the chamber 2 are continued for a predetermined time, the drive of the decompression mechanism is stopped. The parameter group is returned to the standby setting. That is, nitrogen gas is ejected from the gas ejection part 51 at a flow rate of 10 liters per minute (step S19). The set value of the final target temperature in the final heating unit 63 remains at 150 ° C. Furthermore, the set value of the intermediate target temperature is changed by referring to the reference table 101 using the changed parameter group settings (step S20). Here, the set value of the intermediate target temperature in the first intermediate heating unit 61 is changed to 40 ° C., and the set value of the intermediate target temperature in the second intermediate heating unit 62 is changed to 80 ° C. Thereby, in the chamber 2, the nitrogen gas heated to about 150 ° C. by the final heating unit 63 is gently ejected from the gas ejection unit 51.

  After the inside of the chamber 2 returns to atmospheric pressure, the cover 21 is opened, and a plurality of substrates 9 to be processed are unloaded from the chamber 2 by an external transfer mechanism (step S21). Thereby, the process in the substrate processing apparatus 1 is completed. In the above processing example, only the type of gas ejected from the gas ejection unit 51 and the flow rate of the gas are changed while maintaining the final target temperature constant, but depending on the selected recipe information, the final target temperature is changed. The temperature is changed alone or with other parameters.

Next, the generation work of the reference table 101 will be described. In the generation of the reference table 101, for each of a plurality of combinations of parameter groups that can be used in the substrate processing apparatus 1 (for example, all combinations of parameter groups indicated by the plurality of recipe information), the intermediate heating units 61, A preferred setpoint for the intermediate target temperature at 62 is determined. Specifically, in each combination of parameter groups, the type α of gas ejected from the gas ejection unit 51, the set value β of the flow rate of the gas, and the set value γ of the final target temperature are specified, and the type α When the gas flows in the gas flow path at the flow rate β, the temperature range of the inflow gas to the final heating unit 63 that is necessary for realizing the heating to γ [° C.] in the final heating unit 63 is the final It is determined based on the temperature raising capability of the heating unit 63 (temperature raising capability (heating capability) taking into account the specific heat and flow rate of the gas and allowing for a certain margin). The set value T ₂ of the intermediate target temperature of the second intermediate heat section 62, the center value of the temperature range (or, in consideration of the temperature drop between the final heating section 63 and the second intermediate heat unit 62, A value slightly higher than the median).

Subsequently, when the type α gas flows in the gas flow path at the flow rate β, the second intermediate heating unit 62 is required to realize heating to T ₂ ° C. in the second intermediate heating unit 62. The temperature range of the inflowing gas is determined based on the temperature raising capability of the second intermediate heating unit 62. Then, the set value T ₁ of the intermediate target temperature of the first intermediate heating unit 61 is determined as the median value of the temperature range. Through the above operation, the reference table 101 in which a plurality of combinations of parameter group settings and a plurality of set values of the intermediate target temperatures of the intermediate heating units 61 and 62 are associated with each other is generated and prepared.

In the substrate processing apparatus 1, since the temperature of the inflow gas to the first intermediate heating unit 61 is about normal temperature, the type α from normal temperature to the set value T ₁ in consideration of the temperature increase capability of the first intermediate heating unit 61. When it is difficult to heat the gas, warning information is associated with the set values T ₁ and T _{2 of the} intermediate target temperature for the combination of the parameter groups. When the operator selects one piece of recipe information in the processing of the substrate 9 and the parameter group combination in the processing indicated by the recipe information is associated with the warning information, the fact is displayed on the display unit. The operator is notified.

Further, when the type of gas is vapor of IPA, the setting values T ₂ of the intermediate target temperature of the second intermediate heat unit 62, the boiling point of IPA in the above temperature range of the inlet gas to the final heating section 63 are also determined as a high temperature, setpoint T ₁ of the intermediate target temperature of the first intermediate heating unit 62 is determined as a temperature lower than the boiling point of IPA in the above temperature range of the inlet gas to the second intermediate heating section 62 The In the substrate processing apparatus 1, the parameter group and the intermediate target temperature can be manually changed by an operator's input. The reference table 101 is actually used in the substrate processing apparatus 1 to perform an experiment. May be generated.

  Here, a substrate processing apparatus of a comparative example in which the set value of the intermediate target temperature in each of the intermediate heating units 61 and 62 is constant regardless of the setting of the parameter group will be described. The structure of the substrate processing apparatus of the comparative example is the same as that of the substrate processing apparatus 1 of FIG. 1, and the same reference numerals are given in the following description. FIG. 3 is a diagram showing the gas temperature at each position of the gas flow path from the nitrogen gas supply unit 53 to the gas ejection unit 51 in the substrate processing apparatus of the comparative example. The vertical axis in FIG. 3 indicates the gas temperature, and the horizontal axis indicates the position of the gas flow path. In FIG. 3, the position of the nitrogen gas supply unit 53 is indicated by the symbol P0, the positions of the inlet and the outlet of the first intermediate heating unit 61 are indicated by the symbols P11 and P12, and the inlet of the second intermediate heating unit 62 is indicated by the symbols P21 and P22. And the positions of the outlets, reference numerals P31 and P32 indicate the positions of the inlet and outlet of the final heating section 63, and reference numerals P4 indicate the position of the gas ejection section 51.

  In the following description, the type of gas ejected from the gas ejection section 51 is nitrogen gas, the final target temperature is constant at γ [° C.], and the gas flow rate is 10 liters per minute, 100 liters per minute, and per minute. The case where it changes sequentially to 500 liters is assumed. Further, when the gas flow rate is 100 liters per minute, the gas is heated to γ [° C.], which is the final target temperature, in the final heating unit 63, as shown by the line denoted by reference numeral L1 in FIG. The set value of the intermediate target temperature is set in advance, and the set value of the intermediate target temperature is always constant as described above in the substrate processing apparatus of the comparative example.

  In the substrate processing apparatus of the comparative example, when the gas flow rate is 10 liters per minute, the gas is excessively heated in the intermediate heating units 61 and 62, and as shown by the line labeled L2 in FIG. Then, the temperature of the gas at the outlet P32 of the final heating unit 63 significantly exceeds the final target temperature γ [° C.] (that is, overheats). Therefore, in each heating part 61-63, it may be detected by the surface temperature measurement part 613, 623, 633 that abnormality has occurred. Further, when the gas flow rate is 500 liters per minute, the heating of the gas in the intermediate heating units 61 and 62 is insufficient, and as shown by the line denoted by the symbol L3 in FIG. The temperature of the gas at the outlet P32 greatly falls below the final target temperature γ [° C.]. As described above, in the substrate processing apparatus of the comparative example in which the set value of the intermediate target temperature is always constant, it becomes difficult for the final heating unit 63 to stably heat the gas to the set value of the final target temperature. Actually, as in the above operation example in the substrate processing apparatus 1, not only the gas flow rate but also the gas type is changed, or the final target temperature is also changed depending on the processing for the substrate 9.

  On the other hand, in the substrate processing apparatus 1, in processing for the substrate 9 in the chamber 2, at least one setting of a parameter group that is the type of gas ejected from the gas ejection unit 51, the flow rate of the gas, and the final target temperature is set. When changing, the set value of the intermediate target temperature is changed based on the setting of the changed parameter group. Thereby, in the final heating part 63, the gas can be heated more reliably to the set value of the final target temperature.

  In addition, the control unit 10 easily changes the set value of the intermediate target temperature by referring to the reference table 101 that associates a plurality of combinations of parameter group settings with a plurality of set values of the intermediate target temperature. be able to. Further, when at least one setting of the parameter group is changed during the process for the substrate 9 in the chamber 2, the control unit is based on the changed parameter group setting obtained from the recipe information indicating the content of the process. 10, the set value of the intermediate target temperature is automatically changed. Thereby, even when the setting of the parameter group is changed during the processing, the gas can be more reliably heated to the set value of the final target temperature in the final heating unit 63.

  In the substrate processing apparatus 1, in the plurality of heating units 61 to 63, the set value of the target temperature becomes higher as it is closer to the chamber 2 on the gas flow path, and the boiling point of the organic solvent that becomes the vapor in the vapor generation unit 71 is increased. The set value of the target temperature is determined so as to be between the set values in the two heating units 61 and 62 adjacent to both sides of the steam generating unit 71. Thereby, since the vapor | steam of an organic solvent becomes high temperature gradually toward the gas ejection part 51, the condensation of the vapor | steam in a gas flow path produced when the temperature of the saturated organic solvent vapor | steam falls can be suppressed.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made.

  In the process for the substrate 9 in the chamber 2, when the final target temperature is constant, at least one setting of the specific parameter group that is the type of gas ejected from the gas ejection unit 51 and the flow rate of the gas is changed. In this case, the set value of the intermediate target temperature is changed based on the setting of the specific parameter group after the change. Thereby, in the final heating part 63, the gas can be heated more reliably to the set value of the final target temperature. Also in this case, it is preferable to prepare a reference table in which a plurality of combinations of specific parameter group settings and a plurality of set values of the intermediate target temperature are associated with each other.

  Further, the setting value of the intermediate target temperature may be changed without using the reference table 101. For example, when the type of gas is constant, a function having the final target temperature and the gas flow rate as parameters is predetermined for each of the intermediate heating units 61 and 62, and the set value of the final target temperature after the change and The set value of the intermediate target temperature may be obtained by inputting the set value of the gas flow rate into the function.

  The steam generation unit 71 may be provided between the second intermediate heating unit 62 and the final heating unit 63. Also in this case, the boiling point of the organic solvent in the steam generation unit 71 is preferably between the set value of the target temperature in the second intermediate heating unit 62 and the set value of the target temperature in the final heating unit 63, Steam condensation in the gas channel can be suppressed.

  In the above embodiment, three heating units are provided in the gas flow path between the gas ejection unit 51 and the gas supply unit when only one gas ejection unit 51 is focused. Two or four or more heating units may be provided in the path.

  In the gas ejection part 51, gases other than nitrogen gas and IPA vapor may be ejected. For example, by providing a plurality of branch paths at the end of the gas supply pipe 52 opposite to the gas ejection section 51 and connecting the plurality of branch paths to the plurality of gas supply sections, a plurality of types can be obtained from the gas ejection section 51. The gas can be ejected. In the substrate processing apparatus 1, in addition to drying the substrate 9, other processing such as modification of the surface state of the substrate 9 may be performed.

  The substrate 9 processed in the substrate processing apparatus 1 is not limited to a silicon substrate, and may be another type of substrate such as a glass substrate.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Chamber 9 Substrate 10 Control part 51 Gas ejection part 52 Gas supply pipe 53 Nitrogen gas supply part 61,62 Intermediate heating part 63 Final heating part 71 Steam generation part 101 Reference table 541,542 Valve

Claims (4)

A substrate processing apparatus,
A chamber in which the substrate is placed;
A gas ejection part for ejecting gas into the chamber;
A gas flow path connecting the gas supply section and the gas ejection section;
A flow rate adjusting unit for adjusting the flow rate of the gas in the gas flow path;
A final heating unit that is provided near the gas ejection part in the gas flow path, and heats the gas flowing through the gas flow path according to a set value of a final target temperature;
Intermediate heating that is provided between the final heating unit and the supply unit in the gas channel and heats the gas flowing through the gas channel in accordance with a set value of an intermediate target temperature lower than the final target temperature. And
In the process for the substrate in the chamber, when at least one setting of the parameter group which is the type of gas ejected from the gas ejection unit, the flow rate of the gas, and the final target temperature is changed, the changed A control unit that changes a set value of the intermediate target temperature based on a parameter group setting;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The control unit changes the set value of the intermediate target temperature by referring to a reference table in which a plurality of combinations of the parameter group settings and a plurality of set values of the intermediate target temperature are associated with each other. A substrate processing apparatus. The substrate processing apparatus according to claim 1, wherein:
When at least one setting of the parameter group is changed during processing on the substrate in the chamber, the control unit is based on the changed setting of the parameter group obtained from recipe information indicating the content of the processing. And changing the set value of the intermediate target temperature. A substrate processing apparatus according to any one of claims 1 to 3,
A plurality of heating units including the final heating unit and the intermediate heating unit are provided in series in the gas flow path,
Between two adjacent heating units of the plurality of heating units, a steam generation unit that generates a vapor of an organic solvent is provided,
The gas from the supply is a carrier gas that carries the vapor to the chamber;
In the plurality of heating units, the closer to the chamber on the gas flow path, the higher the set value of the target temperature,
The substrate processing apparatus, wherein a boiling point of the organic solvent is between set values in the two adjacent heating units.

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