JPH11154026A - Method and device for controlling gas system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control the temperature, pressure, etc., of gas according to respective states of flow rate load, etc., depending upon whether or not there is a flow of gas in use. SOLUTION: Flow rate sensors 41 and 42 which are interposed in supply ducts 2a to 2d for supplying specific gas to a process chamber 6 and detect the flow rate load depending upon whether or not there is a flow of the gas and a CPU 40 which previously stores a control constant corresponding to the flow rate load depending upon whether or not there is the flow of the gas are provided. The flow rate sensors 41 and 42 and/or an isopropyl (IPA) supply pump 43 detects the said flow rate load and/or a flow of IPA to send their detection signals to the CPU 40 and according to the control signal from the CPU 40, a cartridge heater 14, internal cylinder and external cylinder heaters 25 and 26, and a warmth retaining heater 62 are controlled.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for controlling a gas system used in, for example, a semiconductor manufacturing process.

[0002]

2. Description of the Related Art Generally, in a manufacturing process of a semiconductor manufacturing apparatus, an object to be processed (hereinafter, referred to as a wafer or the like) such as a semiconductor wafer or LCD glass is washed with a chemical solution or a rinsing solution (cleaning solution).
A cleaning method of sequentially immersing in a processing tank in which a processing liquid such as the above is stored for cleaning is widely adopted. In such a cleaning process, the surface of a wafer or the like after cleaning is brought into contact with a dry gas composed of a vapor of a volatile organic solvent such as IPA (isopropyl alcohol) to condense or adsorb the vapor of the dry gas. Then, a drying process for removing and drying water from the wafer and the like is performed.

A conventional drying treatment apparatus of this type includes a supply section for supplying an inert gas such as a carrier gas such as nitrogen (N 2), a steam generator for heating a drying gas such as IPA (isopropyl alcohol) to generate steam. A supply pipe provided with an on-off valve for supplying the steam generated by the steam generator, that is, the drying gas, to the drying processing chamber; and a heater for heating the supply pipe. Therefore, in the drying process, since the temperature control of the N2 gas, the drying gas, and the like to be used is important, conventionally, the heater provided in the N2 gas supply pipe, the dry gas supply pipe, or the steam generator is used. Temperature control.

In a semiconductor manufacturing process, a dry etching technique is indispensable for forming a fine pattern on a wafer or the like. In the dry etching, a plasma is generated using a reactive gas in a vacuum, and various materials on a wafer or the like are etched using ions, neutral radicals, atoms, and molecules in the plasma. Therefore, various gases are used depending on the etching material.

Generally, in this type of etching apparatus, an etching gas introduction section is provided in a container having a closed processing chamber, and a vacuum exhaust port for forming a predetermined reduced pressure atmosphere (vacuum) in the processing chamber is formed. A high-frequency power source is connected to one of the plate electrodes which also serve as a susceptor and is disposed facing the processing chamber, and the other plate electrode is grounded to the container.
Then, in a state where a predetermined reduced pressure atmosphere is set in the processing chamber depending on a type of a material to be etched and a reactive gas to be used,
A plasma discharge is generated between the two electrodes by high frequency power, and the wafer or the like is etched by ions, electrons and neutral active species in the generated plasma. Therefore, in the etching process, it is important to control the pressure in the processing chamber to a predetermined reduced-pressure atmosphere. Therefore, conventionally, a pressure adjusting means is provided in an exhaust pipe connected to a vacuum exhaust port to provide a pressure adjusting means in the processing chamber. Controlling pressure.

[0006]

However, in the conventional drying and etching processes of this type, temperature control and pressure control are not performed by changing control constants according to the type of gas and the gas supply state. . For this reason, for example, it is good to control the state where the heat or pressure load is loose by using the control constant of the state where the heat or pressure load is severe. However, when the reverse situation occurs, the control is immediately broken down. was there. In this case, it is still better if the load is light, but there is a disadvantage that the control constants cannot be basically shared between the completely different load states.

The present invention has been made in view of the above circumstances, and stores in advance a control constant corresponding to a load depending on the presence or absence of a flow of a gas to be used, selects a control constant according to each state, and selects a temperature or pressure. It is an object of the present invention to provide a gas system control method and apparatus for controlling the gas system.

[0008]

In order to achieve the above object, according to the first aspect of the present invention, a control constant corresponding to a flow load depending on the presence or absence of a predetermined gas flow is stored in advance,
The temperature of the gas is controlled by selecting the control constant based on a detection signal of the flow load based on the presence or absence of the gas flow. In this case, when it is determined that there is no gas flow based on the detection signal of the gas flow load, it is possible to select a control constant stored in advance and control heating of the gas heating means in advance. (Claim 2). Further, when it is determined based on the detection signal of the gas flow load that there is a flow of the gas, it is possible to control the gas heating means by selecting a control constant stored in advance. 3).

According to a fourth aspect of the present invention, a control constant according to a flow rate load depending on the presence or absence of a flow of a fluid in which at least one gas is mixed is stored in advance, and the mixed fluid containing the gas and the fluid is stored. The temperature of the mixed fluid is controlled by selecting the control constant based on the detection signal of the flow load based on the presence or absence of a flow.

In this case, when it is determined that there is no gas flow based on the detection signal of the gas flow load,
It is possible to control the heating of the gas heating means in advance by selecting a control constant stored in advance (claim 5).

When it is determined based on the detection signal of the gas flow load and the detection signal of the mixed fluid flow load that the gas flow is present and the fluid flow is not present, the control stored in advance is performed. It is possible to control the heating means of the gas by selecting a constant (claim 6).

When it is determined that the gas flow is present and the fluid flow is present based on the detection signal of the gas flow load and the detection signal of the mixed fluid flow load, the control stored in advance is performed. It is possible to control the heating means for the mixed fluid by selecting a constant (claim 7).

When it is determined that there is a flow of the gas based on the detection signal of the gas flow load, a control constant is selected in accordance with the magnitude of the detected gas flow load to select the gas flow. It is possible to control the heating means (claim 8).

Further, a detection signal of the above-mentioned gas flow load,
Based on the detection signal of the flow load of the mixed fluid, based on the flow of the gas, when it is determined that there is a flow of the fluid, the magnitude of the flow load of the detected gas, the flow rate of the fluid It is possible to control the heating means for the mixed fluid by selecting a control constant according to the magnitude of the load (claim 9).

According to a tenth aspect of the present invention, the control constant according to the flow rate load depending on the presence or absence of a predetermined gas flow is stored in advance, and the flow rate load is determined based on the presence or absence of the flow of the gas supplied to the processing chamber. A pressure adjusting means for selecting the control constant and adjusting the pressure in the processing chamber based on the detection signal is controlled.

In this case, the pressure can be controlled even if the gas is a plurality of gases of different flow rates or different types.

When it is determined that there is a flow of the gas based on the detection signal of the flow rate load of the gas,
It is possible to control the pressure adjusting means by selecting a control constant according to the detected magnitude of the flow load.

When it is determined that there is no flow of the gas based on the detection signal of the flow rate load of the gas,
It is possible to select a control constant stored in advance so that the processing chamber reaches a predetermined degree of vacuum.
3).

According to a fourteenth aspect of the present invention, the control constant according to the flow rate load depending on the presence or absence of the flow of the predetermined gas and the control constant according to the presence or absence of the plasma generated in the processing chamber by the plasma generation means. Is stored in advance,
Based on the detection signal of the flow rate load of the gas, controls the pressure adjusting means for selecting the control constant and adjusting the pressure of the processing chamber, and the detection signal of the flow rate load of the gas, and the presence or absence of the plasma generation The pressure of the processing chamber is adjusted by selecting the control constant based on the detection signal.

In the invention described in claim 14, the pressure can be adjusted even if the gas is a plurality of gases of different types (claim 15).

When it is determined that there is a flow of the gas based on the detection signal of the flow rate load of the gas,
It is possible to control the pressure adjusting means by selecting a control constant according to the magnitude of the detected flow load.

When it is determined that there is a flow of the gas and no generation of the plasma based on the detection signal of the flow rate load of the gas and the detection signal of the presence or absence of the plasma, it is stored in advance. It is possible to adjust the pressure of the processing chamber by selecting a control constant (claim 17).

When it is determined that there is a flow of the gas and that there is the generation of the plasma based on the detection signal of the flow rate load of the gas and the detection signal of the presence or absence of the plasma, it is stored in advance. It is possible to adjust the pressure of the processing chamber by selecting a control constant (claim 18).

According to a nineteenth aspect of the present invention, there is provided a supply pipe for supplying a predetermined gas into the processing chamber, heating means provided in the supply pipe for heating the gas, and provided in the supply pipe. Gas load detecting means for detecting a flow rate load depending on the presence or absence of gas flow, control means for storing a control constant corresponding to the flow rate load depending on the presence or absence of the gas flow in advance, It is characterized by detecting a flow load depending on the presence / absence, transmitting a detection signal to the control means, and controlling the heating means based on a control signal from the control means.

According to a twentieth aspect of the present invention, there is provided a supply pipe for supplying a predetermined gas into the processing chamber, heating means interposed in the supply pipe for heating the gas, and provided in the supply pipe. A mixed gas generating means, a mixed gas heating means provided in the mixed gas generating means, a fluid supply pipe connecting the mixed gas generating means and a fluid supply source, Gas load detecting means for detecting a flow load based on the presence or absence of a gas flow; fluid load detecting means interposed in the fluid supply pipe for detecting a flow load based on the presence or absence of a fluid flow; and presence or absence of the gas flow Control means for storing in advance a control constant corresponding to the flow load according to the above, wherein the gas load detection means and / or the fluid load detection means detects the flow load due to the presence or absence of the flow of gas and / or fluid, and the detection signal Up The heating means and / or the mixed gas heating means is controlled based on a control signal from the control means while being transmitted to the control means.

In the twentieth aspect, the gas may be a carrier gas composed of an inert gas, and the fluid may be a volatile organic solvent.

[0027] According to a twenty-second aspect of the present invention, there is provided a supply pipe for supplying a predetermined gas into the processing chamber, a discharge pipe connected to the processing chamber, and a discharge pipe connected to the discharge pipe. Pressure adjusting means for adjusting the pressure, gas load detecting means interposed in the supply pipe for detecting a flow load depending on the presence or absence of a gas flow, and a control constant corresponding to the flow load depending on the presence or absence of the gas flow. Control means for storing in advance, wherein the gas load detecting means detects a flow load depending on the presence or absence of gas flow, and transmits a detection signal to the control means, and based on a control signal from the control means, The pressure adjusting means is controlled.

According to a twenty-third aspect of the present invention, a supply pipe for supplying gas into the processing chamber, a discharge pipe connected to the processing chamber, and a pressure in the processing chamber provided through the discharge pipe. Pressure adjusting means for adjusting; gas load detecting means interposed in the supply pipe line for detecting a flow load of the gas; and plasma for detecting the presence or absence of plasma generated in the processing chamber by the plasma generating means. A generation presence / absence detection means, and a control means for storing in advance a control constant corresponding to the presence / absence of the flow of the gas and the presence / absence of plasma generation of the plasma generated in the processing chamber. While detecting the flow rate load of the gas, the presence / absence of plasma generation of the plasma generated in the processing chamber is detected by the plasma generation presence / absence detection means, and these detection signals are detected. While transmitting the control means, based on the control signal from the control means for controlling said pressure adjusting means so that the processing chamber reaches a predetermined pressure, characterized in that.

According to the first, second, or nineteenth aspect of the present invention, a control constant corresponding to a flow rate load depending on the presence or absence of a predetermined gas flow is stored in the control means in advance, and the flow rate load depending on the presence or absence of the gas flow is stored. Is detected by the gas load detection means, the detection signal is transmitted to the control means, and a control constant is selected based on the detection signal from the control means to control the heating means, so that the temperature of the gas in each state is controlled. Can be controlled to an optimal state. In this case, when it is determined that there is a gas flow based on the detection signal of the gas flow load, a control constant stored in advance is selected to control the gas heating means, thereby increasing the flow load. High-precision control constants can be selected in multiple stages according to the degree of control, and the gas heating means can be controlled with higher accuracy based on the selected control constants, and the temperature of the gas system can be raised to an optimal state. It is possible to control the accuracy (claim 3).

According to the fourth and twentieth aspects of the present invention, the control constant corresponding to the flow load depending on the presence or absence of the flow of at least one fluid mixed with gas is stored in advance to include the gas and the fluid. By controlling the temperature of the mixed fluid by selecting a control constant based on the detection signal of the flow load depending on the presence or absence of the flow of the mixed fluid, it is possible to control the temperature of the single gas in each state and the temperature of the mixed fluid to the optimal state. it can. In this case, when it is determined that there is no gas flow based on the detection signal of the gas flow rate load, the control means selects a control constant stored in advance and controls the heating means of the gas in advance to thereby control the gas flowing thereafter. Can be immediately controlled to the optimum temperature, and the processing efficiency can be improved (claim 5). Further, based on the detection signal of the gas flow load and the detection signal of the flow load of the mixed fluid, when it is determined that there is a gas flow and there is no fluid flow, a control constant stored in advance is selected to select the gas. By controlling the heating means, temperature control corresponding to each state can be realized (claim 6). Further, based on the detection signal of the gas flow load and the detection signal of the flow load of the mixed fluid, if there is a gas flow and it is determined that there is a flow of the fluid, a pre-stored control constant is selected. By controlling the heating means of the mixed fluid, it is possible to realize temperature control corresponding to each state, as in the case of the sixth aspect (claim 7).

When it is determined that there is a gas flow based on the detection signal of the gas flow load, a control constant is selected in accordance with the magnitude of the detected flow load to control the gas heating means. By controlling, a high-precision control constant can be selected according to the magnitude of the flow load, and the gas heating means can be controlled with high accuracy based on the selected control constant, and the temperature of the gas system can be controlled. Can be controlled to an optimum state with high accuracy (claim 8).

When it is determined that there is a gas flow and that there is a fluid flow based on the detection signal of the gas flow load and the detection signal of the mixed fluid flow load, the detected flow load of the gas is determined. By controlling the heating means for the mixed fluid by selecting a control constant according to the magnitude of the flow load of the fluid and controlling the heating means of the mixed fluid, a high-precision control constant can be obtained in multiple stages according to the magnitude of the flow load. The gas heating means can be controlled with high accuracy based on the selected control constant, and the temperature of the gas system can be controlled to an optimal state with high accuracy.

According to the tenth, twelfth, thirteenth, and twenty-second aspects of the invention, a control constant corresponding to the flow load depending on the presence or absence of a predetermined gas flow is stored in the control means in advance, and the gas load detection means stores the control constant. By detecting the flow load depending on the presence or absence of the flow, transmitting the detection signal to the control means, and selecting the control constant based on the detection signal from the control means and controlling the pressure adjusting means, the gas in each state is controlled. Can be controlled to an optimal state. In this case, the pressure can be controlled even if the gas is a plurality of gases of different flow rates or different types (claim 11).

According to the present invention, the control constant is selected based on the detection result of the flow rate load of the gas supplied to the processing chamber and the detection result of the plasma generation. The pressure in the chamber can be controlled to an optimum state. In this case, the pressure can be controlled even if the gases are a plurality of different types of gases.

[0035]

Embodiments of the present invention will be described below in detail with reference to the drawings. First Embodiment FIG. 1 is a configuration diagram when a gas control apparatus according to the present invention is applied to a semiconductor wafer cleaning / drying processing system.

In the cleaning / drying system, a supply line 2a is connected to a supply source 1 of a carrier gas, for example, a nitrogen (N2) gas.
N2 gas heater 3 (hereinafter simply referred to as a heater) as N2 gas heating means connected via a supply pipe 2b to the heater 3 while supplying a drying gas liquid such as IPA. A steam generator 5 as a mixed gas (steam) generating means connected to the source 4 via a supply pipe 2c, and a supply connecting the steam generator 5 and a drying processing chamber 6 (hereinafter simply referred to as a processing chamber). A flow control means 7 provided in the pipe 2d. In this case, an on-off valve 8a is interposed in the supply line 2a connecting the N2 gas supply source 1 and the heater 3. Further, an on-off valve 8b is provided in a supply pipe 2c connecting the IPA supply source 4 and the steam generator 5, and an on-off valve 8b side of the on-off valve 8b is provided via a branch passage 9 and an on-off valve 8c. The IPA collection unit 10 is connected. As shown by the two-dot chain line in FIG.
If necessary, a drain pipe 11 of IPA is connected, and a drain valve 12 is interposed in the drain pipe 11, and a branch path 11a in which a check valve 13 is interposed is connected. By connecting the drain pipe 11, the drain valve 12, and the like in this manner, it becomes convenient to discharge a cleaning liquid or the like when cleaning the inside of the steam generator 5.

As shown in FIG. 2A, the heater 3 includes an introduction pipe 11 communicating with a supply pipe 2a for N2 gas,
A flow path forming pipe 13 inserted into the introduction pipe 11 and forming a spiral flow path 12 between the flow path forming pipe 13 and an inner wall surface of the introduction pipe 11, and a heating unit inserted inside the flow path forming pipe 13; The main part is constituted by the cartridge heater 14. In this case, the introduction pipe 11 has an inflow port 11a connected to the supply pipe 2a at one end, and an outflow port 11b connected to the supply pipe 2b at a side surface of the other end. Further, as shown in FIG. 2 (b), the channel forming tube 13 is formed with a spiral concave and convex groove 15 such as a trapezoidal screw on the outer peripheral surface thereof.
A spiral flow path 12 is formed by the spiral uneven groove 15 and the inner wall surface 11c of the introduction pipe 11. The spiral flow path 1
2 does not necessarily need to have such a structure. For example, a spiral uneven groove may be formed on the inner wall surface of the introduction tube 11, and the outer peripheral surface of the flow path forming tube 13 may be a flat surface. The spiral channel may be formed by forming spiral grooves on both the outer surface of the channel forming tube 13 and the spiral channel, or the spiral channel 12 may be formed by using a coil spong.

As described above, the spiral pipe is connected between the introduction pipe 11 connected to the supply pipe 2a on the side of the N2 gas supply source 1 and the flow path forming pipe 13 or the coil spring inserted into the introduction pipe 11. By forming the flow path 12 and inserting the cartridge heater 14 into the flow path forming pipe 13, the length of the flow path where the N 2 gas flow path and the cartridge heater 14 come into contact with each other is increased, and the spiral flow is reduced. It is possible to increase the flow velocity as compared with the case without the above, thereby increasing the Reynolds number (Re number) and the Nusselt number (Nu number),
By placing the boundary layer in the turbulent flow region, the heat transfer efficiency of the heater 3 can be improved. Therefore, one cartridge heater 14 efficiently converts N2 gas to a predetermined temperature, for example, 200.degree.
, The size of the heater 3 can be reduced. When it is necessary to further increase the heating temperature, an outer cylinder heater may be provided outside the introduction pipe 11.

The steam generator 5 is, as shown in FIG.
A tapered nozzle formed of, for example, a stainless steel pipe-shaped main body 20 connected to the carrier gas supply pipe 2b and having an inner peripheral surface of the pipe-shaped main body 20 gradually narrowing in the flow direction of the carrier gas. The Laval nozzle 21 is formed of a portion 21a and a divergent nozzle portion 21c that gradually expands in the flow direction from a narrow portion 21b of the tapered nozzle portion 21a. This Laval nozzle 21
A shock wave is formed by a pressure difference between the inflow side pressure (primary pressure) and the outflow side pressure (secondary pressure) of the Laval nozzle 21. For example, a shock wave can be formed by appropriately selecting the primary pressure (Kgf / cm2G) and the flow rate of the N2 gas (Nl / min). In this case, a pressure adjusting valve 23 is provided in a branch 22 connecting the primary side and the secondary side of the Laval nozzle 21, and the conditions for generating a shock wave are appropriately set by adjusting the pressure adjusting valve 23. If the primary side pressure can be increased, the shock wave can be formed without using the pressure regulating valve 23.

If it is possible to adjust the pressure or flow rate of the N2 gas on the primary side in a predetermined high pressure range, it is possible to form a shock wave without using the pressure adjusting valve 23. That is, as shown in FIG. 11, the branch passage 22 and the pressure regulating valve 23 can be eliminated by connecting the N2 gas supply source 1 to the N2 gas pressure regulating means 1a for regulating the pressure or the flow rate of the N2 gas. In this case, the N2 gas supply source 1 needs to be able to supply N2 gas at a pressure higher than normal so that N2 gas in a predetermined high pressure range can be supplied. By adjusting the high pressure level of the N2 gas supplied from the N2 gas supply source 1 by the N2 gas pressure adjusting means 1a, the inflow side pressure (primary pressure) and the outflow side pressure (secondary pressure) of the shock wave forming part 21 are reduced. The shock wave generation conditions can be set as appropriate by adjusting the pressure difference of.

The thus-formed Laval nozzle 21
In the middle of the divergent nozzle portion 21c, an IPA supply port 24 is opened. The IPA supply source 4 is connected to the supply port 24 via an IPA supply pipe, that is, a supply pipe 2c. Further, an inner cylinder heater 25 is inserted into the pipe-shaped main body 20 on the outflow side of the divergent nozzle portion 21c, and an outer cylinder heater 26 is provided outside the inner cylinder heater 25. The heating means of the steam generator 5 is constituted. In this case, a heater may be provided near the Laval nozzle 21 and the IPA supply port 24.

As shown in FIGS. 12A and 12B, instead of the inner tube heater 25 and the outer tube heater 26,
Heater 140 having a configuration similar to that of heater 3
It is also possible to use

As shown in FIG. 12A, the heater 140 is provided with an introduction pipe 143 communicating with the shock wave forming section 21,
A flow path forming pipe 145 inserted into the introduction pipe 143 and forming a spiral flow path 144 with the inner wall surface of the introduction pipe 143.
The main part is composed of a heating means, for example, a cartridge heater 146 inserted inside the flow path forming tube 145.

In this case, the introduction pipe 143 has an inflow port 143a connected to the shock wave forming section 21 at one end, and an outflow port 143b connected to the supply path 131b at the other end. In addition, the flow path forming tube 145 is provided in FIG.
As shown in (b), a spiral groove 147 such as a trapezoidal screw is formed on the outer peripheral surface, and a spiral flow path 144 is formed by the spiral groove 147 and the inner wall surface 143c of the introduction pipe 143. Are formed. In addition, the spiral flow path 144
Is not necessarily required to have such a structure. For example, a spiral uneven groove may be formed on the inner wall surface of the introduction tube 143, and the outer peripheral surface of the flow path forming tube 145 may be a flat surface. Alternatively, a spiral groove may be formed on both the outer peripheral surface of the flow path forming pipe 145 and the spiral groove. As a heating unit, a heater for heating the outside of the introduction pipe 143 may be provided in addition to the cartridge heater 146.

As described above, the spiral flow dew 144 is formed between the introduction pipe 143 connected to the shock wave forming section 21 and the flow path formation pipe 145 inserted into the introduction pipe 143, and the flow path formation pipe is formed. By inserting the cartridge heater 146 into the 145, the length of the flow path where the IPA gas flow path and the cartridge heater 146 are in contact with each other is increased, and a spiral flow is formed. As a result, the Reynolds number (Re number) and the Nusselt number (Nu number) can be increased, the boundary layer can be put into the turbulent flow region, and the heat transfer efficiency of the heater 140 can be improved. Therefore, since the single cartridge heater 146 can efficiently heat the N2 gas to a predetermined temperature, for example, 200 ° C., the heater 140 can be downsized. If it is necessary to further increase the heating temperature, an outer cylinder heater may be provided outside the introduction pipe 143.

With the above configuration, the IPA
When the IPA supplied from the supply source 4 is supplied from the supply port 24 of the Laval nozzle 21, the IPA is atomized by a shock wave formed by the Laval nozzle 21, and then the IPA vapor is generated by heating the heaters 25 and 26.

In the above description, the case where the supply port 24 is provided on the secondary side of the Laval nozzle 21, that is, on the side after the generation of the shock wave is described. N2 gas and I
After mixing with PA, it may be atomized by a shock wave.

As shown in FIG. 1, the flow rate control means 7 is an opening adjustment valve, for example, a diaphragm valve 30 provided in the supply line 2d, and a detection means for detecting the pressure in the processing chamber 6. Control means for comparing and calculating a signal from the pressure sensor 31 and information stored in advance, for example, a diaphragm valve 30 based on a signal from a CPU 40 (central processing unit)
And a control valve, for example, a micro valve 32 for controlling the operating pressure of the control valve.

In this case, as shown in FIG. 4, for example, the microvalve 32 communicates with the inflow passage 33 of the working fluid of the diaphragm valve 30, for example, the air, through the discharge passage 34, and is provided on the surface facing the discharge passage 34. A chamber 37 for accommodating a control liquid, for example, a heat-stretchable oil 36, is formed via the flexible member 35, and a plurality of resistance heaters 38 are provided on a surface of the chamber 37 facing the flexible member 35. Do it. In this case, the flexible member 35 has a middle member 35b interposed between the upper member 35a and the lower member 35c, and has a pedestal 35d to be joined to the lower member 35c.
The middle member 35b can open and close the discharge path 34 by bending deformation of the flexible member 35. The micro valve 32 is formed entirely of silicon.

With this configuration, the CP
When the signal from U40 is converted from digital to analog and transmitted to the resistance heater 38, the resistance heater 38 is heated and the control liquid, that is, the oil 36 expands and contracts.
As a result, the flexible member 35 moves in and out of the inflow side to open the upper portion of the discharge path 34, and the control fluid, that is, the gas pressure can be adjusted. Therefore, the diaphragm valve 30 is operated by the fluid, that is, the air delayed by the micro valve 32, and the information stored in advance is compared with the pressure in the processing chamber 6, and the operation of the diaphragm valve 30 is controlled to process the N2 gas. It can be supplied into the chamber 6 and time control of the pressure recovery in the processing chamber 6 can be performed.

As shown in FIG. 5, the processing chamber 6 stores (contains) a cleaning solution such as a chemical solution such as hydrofluoric acid or pure water, and immerses the wafer W in the stored cleaning solution. The lid 51 is formed in an upper portion of the opening 50 and provided above the opening 50a for loading / unloading the wafer W so as to be openable and closable. In addition, the processing chamber 6 and the cleaning tank 5
Between 0 and 0, a holding means such as a wafer boat 52 for holding a plurality of, for example, 50 wafers W and moving the wafers W into the cleaning tank 50 and the processing chamber 6 is provided. Further, a cooling pipe 53 for cooling the IPA gas supplied into the processing chamber 6 may be provided in the processing chamber 6. The cleaning tank 50 includes an inner tank 55 having a discharge port 54 at the bottom, and an outer tank 56 for receiving the cleaning liquid overflowing from the inner tank 55. In this case, the wafer W is supplied to the chemical solution or pure water supplied and stored in the inner bath 55 from the chemical solution or pure water supply nozzle 57 disposed below the inner bath 55.
Is soaked and washed. A discharge pipe 56b is connected to a discharge port 56a provided at the bottom of the outer tank 56. With such a configuration, the cleaned wafer W is moved into the processing chamber 6 by the wafer boat 52 and comes into contact with the IPA gas supplied into the processing chamber 6 to condense or adsorb the vapor of the IPA gas. hand,
The removal and drying of the water of the wafer W are performed.

A filter 60 is provided in the supply line 2d on the downstream side (secondary side) of the diaphragm valve 30 so as to supply a dry gas with few particles. Further, a heater 62 for keeping heat is arranged outside the supply pipe 2d so that the temperature of the IPA gas can be maintained constant. Furthermore, the supply line 2d
A temperature sensor 61 (temperature detecting means) for IPA gas is disposed on the processing chamber 6 side of
The temperature of the gas is measured.

On the other hand, as shown in FIG.
a, a gas load detecting means for detecting a load based on the presence or absence of the flow of the N2 gas flowing through the supply line 2a, for example, a flow rate detection sensor 41, and the supply line 2d is connected to the supply line 2d. Gas load detecting means for detecting a load depending on whether or not the flowing IPA gas flows, for example, a flow rate detecting sensor 4
2 are interposed. The IPA supply line 2c has an I
IPA supply pump 43 capable of detecting presence / absence of PA flow
(Fluid flow detecting means) is provided.

The flow rate detection sensors 41 and 42 and the IPA
The load detection signal detected by the supply pump 43 is transmitted to the CPU 40 and stored in the CPU 40 in accordance with the flow rate load based on the presence / absence of N2 gas, IPA gas and IPA flow, that is, the presence / absence of gas flow. Corresponding to a plurality of control modes, proportional operation, integral operation and differential operation adopted for each control mode.
The arithmetic processing is performed based on PID control constants (control constants) including operations, and the control signals are used to control the N2 gas heater 3, the heaters 25 and 26 of the steam generator 5, and the heat retaining heater 6.
2 is controlled. The PID control constant is stored in a data table in the CPU 40.

Next, temperature control of N2 gas, IPA and IPA gas (dry gas; mixed gas) in the above-mentioned cleaning / drying processing system will be described with reference to flowcharts of FIGS.

☆ Temperature control of N2 gas heater As shown in FIG.
After confirming the process mode in which the gas flow rate, supply timing and the like are set (step A), it is confirmed by the flow rate sensor 41 whether or not the N2 gas is flowing (step B). When the N2 gas is not flowing, the heat-up mode is set by the control signal from the CPU 40 (step C), and the N2 gas heater 3 is heated up based on the PID constants (P11, I11, D11) obtained by the auto-tuning in advance. Temperature control for the mode is performed (steps D and E). In this way, it is determined whether or not the process mode has ended (step F). If the process mode has ended, the temperature control for the heat-up mode is ended,
If not, the process mode is checked again (step A).

On the other hand, when the N2 gas is flowing through the supply pipe 2a, the mode becomes the N2 gas flow mode (step G), and the N2 gas flows based on the PID constants (P21, I21, D21) obtained in advance by the automatic tuning. Set heater 3 to N2
Temperature control for the gas flow mode is performed (steps H and I). In this way, it is determined whether or not the process mode has ended (step J). If the process mode has ended, the temperature control for the N2 gas flow mode is ended. If not, the process mode is checked again. (Step A), the above procedure is repeated to control the temperature of the N2 gas heater.

Therefore, depending on whether or not N2 gas has been supplied from the N2 gas supply source 1 to the supply pipe 2a,
Select a PID constant (control constant) stored in advance and select N2
The gas heater 3 can be preheated or heated to bring the temperature of the N2 gas to an optimum state.

In the above description, in the N2 gas flow mode (steps H and I), the flow sensor 4
P based on the presence or absence of N2 gas flow detected by
An example in which only the ID constants (P21, I21, D21) are stored in the data table in advance has been described.
It is also possible to store the PID constant in advance in multiple stages in accordance with the magnitude of the flow load detected in step 1, ie, the magnitude of the flow rate of the N2 gas. As a result, since the PID constants used in accordance with the magnitude of the flow rate load of the N2 gas are stored in the data table in advance, a highly accurate PID constant is set in multiple stages according to the magnitude of the flow rate load. Can be selected and N based on the selected PID constant
The two-gas heater 3 can be controlled with high precision, and the temperature of the N2 gas can be controlled with high precision in an optimum state.

☆ Temperature control of steam generator As shown in FIG. 7, first, after confirming a process mode in which the flow rates and supply timings of N2 gas and IPA in the steam generator 5 are set (step A), a flow rate sensor is used. At 41, it is confirmed whether or not N2 gas is flowing (step B). If N2 gas is not flowing, CP
A heat-up mode is set by a control signal from U40 (step C), and P
Steam generator 5 based on ID constants (P12, I12, D12)
Of the heaters 25 and 26 in the heat-up mode (steps D and E). In this way, it is determined whether or not the process mode has ended (step F). If the process mode has ended, the temperature control for the heat-up mode is ended. If not, the process mode is checked again (step F). A).

On the other hand, if the N2 gas is flowing in the supply pipe 2a, it is next determined whether or not the IPA is being supplied based on whether or not the IPA supply pump 43 is driven (step G). If not, CPU4
In response to a control signal from 0, an N2 gas flow mode is set (step H), and P
Based on the ID constants (P22, I22, D22), the heaters 25 and 26 of the steam generator 5 through which the N2 gas passes are temperature-controlled in the N2 gas flow mode (steps I and I22).
J). In this way, it is determined whether or not the process mode has ended (step K). If the process mode has ended, the heating is ended. If not, the process mode is checked again (step A).

Further, when IPA is flowing through the supply line 2c, N2 is supplied by a control signal from the CPU 40.
+ IPA flow mode (step L), and PID constants (P32, I32, D
The heaters 25 and 26 of the steam generator 5 are heated based on 32) (Steps M and N). In this way, it is determined whether or not the process mode has ended (step O). If the process mode has ended, heating is ended. If not, the process mode is checked again (step A).
The heater 25, 2 of the steam generator 5 is repeated by repeating the above-described procedure.
6 for the N2 + IPA flow mode.

Therefore, the state of whether or not the N 2 gas is supplied from the N 2 gas supply source 1 to the supply line 2a or the IPA is supplied from the IPA supply source 4 to the steam generator 5 through the supply line 2c. The temperature of the N2 gas and the temperature of the dry gas are controlled by selecting a PID constant (control constant) stored in advance and controlling the temperature of the heaters 25 and 26 of the N2 gas heater 3 or the steam generator 5 depending on whether or not the temperature is high. Can be optimized.

In the above description, N2 + IP
In the A flow mode (step L), the flow sensor 4
1 and a PID constant (P3
2, I32, D32) are stored in the data table in advance, but the flow rate of N2 gas and I2
It is also possible to store the PID constant in advance in multiple stages according to the magnitude of the PA supply amount. Thus, the data table shows the magnitude of the N2 gas flow load and the IPA.
Since the PID constant adopted according to the magnitude of the supply amount is stored in advance, a highly accurate PID constant can be set and selected in multiple steps according to the magnitude of the flow load of N2 gas and IPA. The heaters 25 and 26 of the steam generator 5 can be controlled with high accuracy based on the selected PID constant, and the temperature of the N2 gas and the temperature of the dry gas can be controlled with high accuracy in an optimum state.

☆ Temperature control of dry gas As shown in FIG. 8, first, after confirming the process mode in which the flow rate and supply timing of the N 2 gas and IPA in the steam generator 5 are set (step A), the flow rate sensor 41 It is checked whether N2 gas is flowing (step B). If N2 gas is not flowing, CP
A heat-up mode is set by a control signal from U40 (step C), and P
Heating heater 6 based on ID constants (P13, I13, D13)
2 performs temperature control for the heat-up mode (steps D and E). In this way, it is determined whether or not the process mode has ended (step F). If the process mode has ended, the temperature control for the heat-up mode is ended. If not, the process mode is checked again (step F). A).

On the other hand, if the N2 gas is flowing in the supply pipe 2a, it is next determined whether or not the IPA is being supplied based on whether or not the IPA supply pump 43 is driven (step G). If not, CPU4
In response to a control signal from 0, an N2 gas flow mode is set (step H), and P
Based on the ID constants (P23, I23, D23), the temperature control of the heat retaining heater 62 through which the N2 gas passes is performed in the N2 gas flow mode (steps I and J). In this way, it is determined whether or not the process mode has ended (step K). If the process mode has ended, the temperature control for the N2 gas flow mode is ended. If not, the process mode is confirmed again (step K). Step A).

Further, when IPA is flowing through the supply pipe 2c, the dry gas (N2
+ IPA) is detected, and the mode is set to the N2 + IPA flow mode by a control signal from the CPU 40 (step L), and the heat retention heater 62 is set to N2 based on the PID constants (P33, I33, D33) obtained by the automatic tuning in advance.
Temperature control for the + IPA flow mode is performed (steps M and N). In this way, it is determined whether or not the process mode has ended (step O). If the process mode has ended, the temperature control for the N2 + IPA flow mode is ended. If not, the process mode is checked again ( Step A), the above procedure is repeated to control the temperature of the heat retaining heater 62.

Therefore, whether the N 2 gas has been supplied from the N 2 gas supply source 1 to the supply line 2a or not, the IPA supply source 4 sends the IPA to the steam generator 5 via the supply line 2c.
A PID constant (control constant) stored in advance is selected according to the state of whether or not the N2 gas heater 3 is supplied or the state of whether or not the dry gas is flowing through the supply pipe 2d. Temperature control, heaters 25 and 26 of steam generator 5
Temperature control, or by controlling the temperature of the warming heater 62 by N
(2) The temperature of the gas and the temperature of the dry gas can be optimized.

In the above description, N2 + IP
In the A flow mode (step L), the flow sensor 4
2 shows an example in which only the PID constants (P33, I33, D33) based on the presence / absence of the passage of the drying gas (N2 + IPA) are previously stored in the data table, but the flow sensor 42 allows the passage of the drying gas (N2 + IPA). It is also possible to store the PID constant in advance in multiple stages according to the magnitude of the flow rate. As a result, the data table stores in advance the PID constants used in accordance with the magnitude of the flow rate of the drying gas (N2 + IPA), so that the data table has multiple stages according to the magnitude of the flow rate of the drying gas (N2 + IPA). It is possible to set and select a highly accurate PID constant, and based on the selected PID constant, the heat retention heater 62 can be selected.
Can be controlled with high accuracy, and the temperature of the N2 gas and the temperature of the drying gas can be controlled to an optimum state with high accuracy.

Second Embodiment FIG. 9 is a schematic configuration diagram of a second embodiment of the gas control device according to the present invention. The second embodiment is a case where the gas control device according to the present invention is applied to pressure control of an etching device.

The above-mentioned etching apparatus comprises a gas supply pipe connecting a container 70 having a process chamber 71 which can be sealed and a gas supply source (not shown) of a different type from a gas introduction unit provided in the container 70. 72 a to 72 c, an exhaust pipe 73 connected to a vacuum exhaust port provided in the processing chamber 71, and a vacuum exhaust device such as a vacuum pump 74 connected to the exhaust pipe 73.

In this case, the processing chamber 71 is provided in the container 70.
An upper plate electrode 75 that also serves as a susceptor and a lower plate electrode 76 that also functions as a susceptor are disposed, and a high-frequency power supply 77 is connected to the lower plate electrode 76 on which the wafer W is placed. The upper plate electrode 75 is a container 70
Grounded.

The gas supply pipes 72a to 72c are respectively provided with mass flow controllers 78a to 78c for detecting and controlling various gas flow rates and air operation on-off valves 79a to 79c.
79c, and the mass flow controller 78
The detection signals detected and controlled in a to 78c are transmitted to control means, for example, the CPU 40A.

On the other hand, on the vacuum exhaust port side of the exhaust pipe 73,
A control valve 80 as pressure adjusting means in the processing chamber 71 is provided, and a turbo molecular pump 81 is provided downstream of the control valve 80. In this case, the opening of the control valve 80 is adjusted based on a control signal from the CPU 40A.

The processing chamber 71 is provided on the side wall of the container 70.
A window 82 for monitoring the inside is provided.
A monochromator 83 for detecting the presence or absence of plasma emission generated by the application of high-frequency power from the high-frequency power supply 77 is provided outside the high-frequency power source 77, and a detection signal detected by the monochromator 83 is sent to the CPU 40A. It is configured to be transmitted. In addition, between the turbo molecular pump 81 and the vacuum pump 74 in the container 70 and the exhaust pipe 73, pressure gauges 84, 8 for measuring the pressure of each part are provided.
5 are provided respectively.

In the etching apparatus configured as described above, the lower flat plate electrode 76 is
After the wafer W is mounted thereon, the control valve 80 is adjusted based on a control signal from the CPU 40A, and the vacuum pump is driven to bring the inside of the processing chamber 71 into a predetermined reduced-pressure atmosphere. , A high frequency power is applied from a high frequency power supply 77 to generate a plasma discharge between the electrodes 75 and 76, and ions, electrons and neutral active species in the generated plasma cause the plasma discharge. The wafer W is etched.

At this time, the pressure in the processing chamber 71 changes due to the flow rates of various gases and the ignition of plasma. Therefore, in the present invention, the processing pressure is controlled to the optimum pressure by selecting the PID constant (control constant) corresponding to the load depending on the flow rate of each gas stored in the CPU 40A in advance and controlling the control valve 80. ing.

Next, the form of pressure control according to the second embodiment will be described with reference to the flowchart of FIG. First, after confirming the process mode in which the type, flow rate, supply timing and the like of the gas to be used are set (step A), it is confirmed by the mass flow controllers 78a to 78c whether or not the gas is flowing (step B). When the gas is not flowing, a vacuum reaching mode (a mode for checking whether the leak in the processing chamber 71 is normal) is set by a control signal from the CPU 40A (step C), and a PID constant (P1) previously obtained by auto-tuning. , I1, D1).
Is adjusted (steps D and E). In this way, it is determined whether or not the process mode has ended (step F). If the process mode has ended, the opening adjustment of the control valve 80 is ended. If not, the process mode is confirmed again ( Step A).

On the other hand, when the gas is flowing through the gas supply pipes 72a to 72c, it is next determined by the monochromator 83 whether or not the plasma is generated by the application of the high frequency power of the high frequency power supply 77 (step S1). G) When no plasma is generated, a gas flow mode is set by a control signal from the CPU 40A (step H), and PID constants (P2, I2,
The opening of the control valve 80 is adjusted based on D2) (steps I and J). In this way, it is determined whether or not the process mode has ended (step K). If the process mode has ended, the opening adjustment of the control valve 80 is ended. If not, the process mode is confirmed again ( Step A).

Further, if plasma emission is confirmed by the monochromator 83 and plasma is generated, the plasma mode is set (step L), and based on the PID constants (P3, I3, D3) obtained in advance by auto-tuning. To adjust the opening of the control valve 80 (steps M and N). In this way, it is determined whether or not the process mode has ended (step O). If the process mode has ended, the opening adjustment of the control valve 80 is ended.
If the process has not been completed, the process mode is checked again (step A), and then the above procedure is repeated to adjust the opening of the control valve 80.

Therefore, the supply line 72
A PID constant (control constant) stored in advance is selected according to the state of whether gas has been supplied into the processing chamber 71 via a to 72c or the state of generation of plasma. By adjusting the opening of the control valve 80, the processing pressure in the processing chamber 71 can be optimized.

Other Embodiments In the first embodiment, the case where the gas control device according to the present invention is applied to a semiconductor wafer cleaning processing system has been described. Of course, it can be applied to LCD glass substrates other than semiconductor wafers.

In the second embodiment, the case where the gas control device according to the present invention is applied to a plasma etching apparatus has been described. However, the etching apparatus other than the plasma processing or the processing chamber is controlled to a predetermined pressure. Of course, the present invention can also be applied to an apparatus for supplying and processing various gases such as a CVD apparatus and a sputtering apparatus.

[0084]

As described above, according to the present invention, the following excellent effects can be obtained.

1) According to the first, second, or nineteenth aspect of the present invention, a control constant corresponding to a flow rate load depending on the presence or absence of a predetermined gas flow is stored in advance in the control means, and the control constant is stored in the control means. The flow load is detected by the gas load detection means, and the detection signal is transmitted to the control means, and the control means selects the control constant based on the detection signal from the control means to control the heating means. The temperature can be controlled to an optimum state.

2) According to the fourth or twentieth aspect of the present invention, the control constant corresponding to the flow load depending on the presence or absence of the flow of at least one fluid mixed with the gas is stored in advance, and the gas and the fluid are stored. Controlling the temperature of the mixed fluid by selecting a control constant based on the detection signal of the flow load based on the presence or absence of the flow of the mixed fluid including the above, controlling the temperature of the single gas in each state and the temperature of the mixed fluid to the optimum state Can be.

3) According to the fifth aspect of the present invention, when it is determined that there is no gas flow, a control constant stored in advance is selected to control the heating of the gas heating means in advance. The flowing gas can be immediately controlled to the optimum temperature, and the processing efficiency can be improved. Further, when it is determined that there is no fluid flow, by controlling the temperature of the gas heating means by selecting a control constant stored in advance, it is possible to realize temperature control corresponding to each state. Item 6). When it is determined that there is a gas flow and a fluid flow, a temperature control corresponding to each state is performed by selecting a control constant stored in advance and controlling the heating means of the mixed fluid. (Claim 7). Further, when it is determined that there is a gas flow, a control constant is selected in accordance with the magnitude of the detected flow load to control the gas heating means, so that the temperature of the gas system is raised to an optimum state. It is possible to control the accuracy (claim 8). Also, when it is determined that there is a gas flow and a fluid flow, the magnitude of the gas flow load and
By selecting a control constant according to the magnitude of the flow load of the fluid and controlling the heating means of the mixed fluid, a highly accurate control constant can be selected in multiple stages, and the temperature of the gas system can be optimized. The control can be performed with high accuracy (claim 9).

4) According to the present invention, a control constant corresponding to a flow load depending on the presence or absence of a predetermined gas flow is stored in the control means in advance, and the gas load detecting means is stored in the control means. The flow rate load is detected by the presence or absence of gas flow, and the detection signal is transmitted to the control means.The control constant is selected based on the detection signal from the control means to control the pressure adjusting means. The gas pressure can be controlled to an optimum state.

5) According to the invention of claims 14 to 18 or 23, the control constant is selected and processed based on the detection result of the flow rate load of the gas supplied to the processing chamber and the detection result of the presence or absence of plasma generation. The pressure in the chamber can be controlled to an optimum state.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a first embodiment of a gas control device according to the present invention.

FIG. 2A is a cross-sectional view of a carrier gas heater according to the first embodiment, and FIG.

FIG. 3 is a cross-sectional view illustrating an example of a steam generator according to the first embodiment.

FIG. 4 is a cross-sectional view illustrating an example of a flow rate control unit and a control valve thereof according to the first embodiment.

FIG. 5 is a schematic sectional view showing a processing chamber in the first embodiment.

FIG. 6 is a flowchart illustrating a temperature control method of the carrier gas heater according to the first embodiment.

FIG. 7 is a flowchart illustrating a temperature control method of the steam generator according to the first embodiment.

FIG. 8 is a flowchart illustrating temperature control of a dry gas supply unit according to the first embodiment.

FIG. 9 is a schematic configuration diagram showing a second embodiment of the gas control device according to the present invention.

FIG. 10 is a flowchart illustrating a pressure control method according to the second embodiment.

11 is a schematic configuration diagram illustrating another example of the gas-based control device illustrated in FIG. 1. FIG.

12A is a sectional view showing another example of the heater of the steam generator according to the present invention, and FIG.

[Explanation of symbols]

W Semiconductor wafers 2a to 2d Supply pipeline 3 N2 gas heater 5 Steam generator (mixed gas generating means) 6 Dry processing chamber 14 Cartridge heater (heating means) 25 Inner cylinder heater (mixed gas heating means) 26 Outer cylinder heater ( Mixed gas heating means) 40, 40A CPU (control means) 41, 42 Flow rate sensor (gas load detecting means) 43 IPA supply pump (fluid load detecting means) 62 Heat retaining heater (heating means) 71 Processing chambers 72a to 72c Gas supply pipe Road 73 Exhaust line 78a-78c Mass flow controller (gas load detecting means) 80 Control valve (pressure adjusting means) 146 Cartridge heater (heating means)

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI H01L 21/205 H01L 21/205 21/304 645 21/304 645B 651 651H // H01L 21/3065 21/302 A (72) Invention Person Osamu Uchizawa 1-12-1 Tsutsumicho, Aoba-ku, Sendai City, Miyagi Prefecture Inside Motoyama Manufacturing Co., Ltd. (72) Inventor Yasuhiro Chiba 1-12-1 Tsutsumicho, Aoba-ku, Sendai City, Miyagi Prefecture Motomoto Manufacturing Co., Ltd.

Claims (23)

[Claims] 1. A control constant corresponding to a flow load depending on the presence or absence of a predetermined gas flow is stored in advance, and the control constant is selected based on a detection signal of the flow load based on the presence or absence of the gas flow. A method for controlling a gas system, comprising controlling the temperature of the gas. 2. The control method of a gas system according to claim 1, wherein a control constant stored in advance is selected when it is determined that there is no gas flow based on the detection signal of the gas flow load. Controlling the gas heating means in advance by heating. 3. The control method for a gas system according to claim 1, wherein a control constant stored in advance is selected when it is determined that there is a flow of the gas based on the detection signal of the flow rate load of the gas. Controlling the gas heating means by heating. 4. A control constant according to a flow load depending on the presence / absence of a flow of a fluid in which at least one gas mixed with each other is stored in advance, and the flow rate based on the presence / absence of a flow of a mixed fluid containing the gas and the fluid. A method for controlling a gas system, comprising selecting the control constant and controlling the temperature of the mixed fluid based on a load detection signal. 5. The control method for a gas system according to claim 4, wherein when it is determined that there is no gas flow based on the detection signal of the gas flow load, a control constant stored in advance is selected. Controlling the gas heating means in advance by heating. 6. The method of controlling a gas system according to claim 4, wherein the flow of the gas is based on the detection signal of the flow load of the gas and the detection signal of the flow load of the mixed fluid. A gas control method comprising: selecting a control constant stored in advance and controlling the gas heating means when it is determined that there is no control constant. 7. The gas control method according to claim 4, wherein the gas flow is present and the fluid flow is present based on the detection signal of the flow load of the gas and the detection signal of the flow load of the mixed fluid. A control method for controlling the heating of the mixed fluid by selecting a control constant stored in advance when the determination is made. 8. The control method for a gas system according to claim 4, wherein when it is determined that there is a flow of the gas based on a detection signal of the flow load of the gas, the magnitude of the detected flow load is determined. Controlling the gas heating means by selecting a control constant according to the control method. 9. The method of controlling a gas system according to claim 4, wherein the flow of the gas is based on the detection signal of the flow load of the gas and the detection signal of the flow load of the mixed fluid. When it is determined that there is, controlling the heating means of the mixed fluid by selecting a control constant according to the magnitude of the flow load of the detected gas and the magnitude of the flow load of the fluid. A method for controlling a gas system, comprising: 10. A control constant corresponding to a flow rate load depending on the presence or absence of a predetermined gas flow is stored in advance, and based on the detection signal of the flow rate load based on the presence or absence of the flow of the gas supplied to the processing chamber. A method for controlling a gas system, comprising: controlling a pressure adjusting means for adjusting a pressure of the processing chamber by selecting a control constant. 11. The method according to claim 10, wherein the gas includes a plurality of gases of different flow rates or different types. 12. The method of controlling a gas system according to claim 10, wherein when the flow of the gas is determined to be present based on the detection signal of the flow load of the gas, the magnitude of the detected flow load is determined. A method for controlling a gas system, comprising selecting a control constant in accordance with the control and controlling the pressure adjusting means. 13. The control method for a gas system according to claim 10, wherein a control constant stored in advance is selected when it is determined that there is no gas flow based on the detection signal of the flow rate load of the gas. And controlling the processing chamber to reach a predetermined degree of vacuum. 14. A control constant corresponding to a flow rate load depending on the presence or absence of a predetermined gas flow and a control constant corresponding to presence / absence of plasma generation of plasma generated in a processing chamber by a plasma generation means are stored in advance. Controlling the pressure adjusting means for selecting the control constant and adjusting the pressure of the processing chamber based on the detection signal of the flow rate load of the gas, and detecting the detection signal of the flow rate load of the gas; And controlling the pressure of the processing chamber by selecting the control constant based on the detection signal. 15. The method according to claim 14, wherein the gas includes a plurality of gases of different types. 16. The method of controlling a gas system according to claim 14, wherein when it is determined that there is a flow of the gas based on a detection signal of the flow load of the gas, the magnitude of the detected flow load is increased. A method for controlling a gas system, comprising selecting a control constant in accordance with the control and controlling the pressure adjusting means. 17. The method of controlling a gas system according to claim 14, wherein the flow of the gas is based on the detection signal of the flow rate load of the gas and the detection signal of the presence or absence of plasma generation.
A method for controlling a gas system, comprising: selecting a control constant stored in advance and adjusting a pressure of a processing chamber when it is determined that there is no plasma generation. 18. The gas control method according to claim 14, wherein the flow of the gas is based on the detection signal of the flow rate load of the gas and the detection signal of the presence or absence of the plasma.
A method for controlling a gas system, comprising: selecting a control constant stored in advance and adjusting a pressure in a processing chamber when it is determined that the plasma is generated. 19. A supply pipe for supplying a predetermined gas into the processing chamber, heating means provided in the supply pipe for heating the gas, and presence or absence of a gas flow provided in the supply pipe. Gas load detecting means for detecting a flow load according to the flow rate, and control means for storing a control constant corresponding to the flow rate load depending on the presence or absence of the gas flow in advance. A gas-based control device which detects a load, transmits a detection signal to the control means, and controls the heating means based on a control signal from the control means. 20. A supply pipe for supplying a predetermined gas into the processing chamber, heating means interposed in the supply pipe for heating the gas, and mixed gas generating means provided in the supply pipe. A mixed gas heating means provided in the mixed gas generating means, a fluid supply pipe connecting the mixed gas generating means and a fluid supply source, and a gas flow interposed in the supply pipe depending on whether or not gas flows. A gas load detecting means for detecting a flow load, a fluid load detecting means interposed in the fluid supply pipe for detecting a flow load depending on the presence or absence of a fluid flow, A control means for storing a control constant in advance, wherein the gas load detection means and / or the fluid load detection means detect a flow load due to the presence or absence of the flow of gas and / or fluid, and transmit a detection signal to the control means. Together, based on the control signal from the control means of the gas system and controlling said heating means and or a mixed gas heating means control unit. 21. The gas control apparatus according to claim 20, wherein the gas is a carrier gas composed of an inert gas, and the fluid is a volatile organic solvent. apparatus. 22. A supply pipe for supplying a predetermined gas into the processing chamber, a discharge pipe connected to the processing chamber, and a pressure adjustment interposed between the discharge pipe and adjusting the pressure in the processing chamber. Means, a gas load detecting means interposed in the supply pipe and detecting a flow load depending on the presence or absence of a gas flow, and a control means storing in advance a control constant corresponding to the flow load depending on the presence or absence of the gas flow. The gas load detecting means detects a flow load based on the presence or absence of gas flow, transmits a detection signal to the control means, and controls the pressure adjusting means based on a control signal from the control means. And a gas-based control device. 23. A supply pipe for supplying gas into the processing chamber, a discharge pipe connected to the processing chamber, and a pressure adjusting means interposed in the discharge pipe and adjusting pressure in the processing chamber. A gas load detecting means interposed in the supply pipe line for detecting a flow load of the gas; a plasma generation presence / absence detecting means for detecting presence / absence of plasma of plasma generated in the processing chamber by plasma generation means; Control means for storing in advance the control constant according to the presence or absence of the gas flow and the presence or absence of plasma generation of the plasma generated in the processing chamber, wherein the gas load detection means controls the flow rate load of the gas. At the same time, the presence / absence of plasma generated in the processing chamber is detected by the plasma generation presence / absence detection means, and these detection signals are transmitted to the control means. Controlling the pressure adjusting means so that the processing chamber has a predetermined pressure based on a control signal from the control means,
A gas-based control device, characterized in that: