JP2013128047A5 - Method of regenerating semiconductor substrate, and method of manufacturing SOI substrate - Google Patents
Method of regenerating semiconductor substrate, and method of manufacturing SOI substrate Download PDFInfo
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- JP2013128047A5 JP2013128047A5 JP2011277012A JP2011277012A JP2013128047A5 JP 2013128047 A5 JP2013128047 A5 JP 2013128047A5 JP 2011277012 A JP2011277012 A JP 2011277012A JP 2011277012 A JP2011277012 A JP 2011277012A JP 2013128047 A5 JP2013128047 A5 JP 2013128047A5
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- semiconductor substrate
- substrate
- semiconductor
- substance
- regenerating
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Claims (4)
前記第１の工程は、
前記半導体基板を構成する半導体材料を酸化する物質と、酸化された前記半導体材料を溶解する物質と、前記半導体材料の酸化速度及び前記酸化された半導体材料の溶解速度を制御する物質とを含む混合液を用いたエッチングにより、前記損傷領域を選択的に除去する工程を有し、
前記第２の工程は、
アルカリ性の溶液を用いて、前記第１の工程で除去されなかった前記損傷領域を除去する工程を有し、
前記第３の工程は、
研磨処理を有することを特徴とする半導体基板の再生方法。 To the semiconductor substrate having a damaged area, the first step, a second step and the third step the semiconductor substrate playback method for performing,
The first step is
A mixture containing a substance that oxidizes a semiconductor material that constitutes the semiconductor substrate, a substance that dissolves the oxidized semiconductor material, and a substance that controls the oxidation rate of the semiconductor material and the dissolution rate of the oxidized semiconductor material by etching using a liquid, comprising the step of selectively removing the prior destruction wound area,
The second step is
Using an alkaline solution, and a step of removing the damaged wound area before that were not removed in the first step,
The third step is
What is claimed is: 1. A method of reclaiming a semiconductor substrate comprising polishing treatment.
前記研磨処理は、高い研磨レートの処理と、低い研磨レートの処理とを、順に行うことを特徴とする半導体基板の再生方法。The method for regenerating a semiconductor substrate according to claim 1, wherein the polishing process is performed in order of a process of high polishing rate and a process of low polishing rate.
前記混合液が、さらに亜硝酸を含むことを特徴とする半導体基板の再生方法。 In claim 1 or claim 2,
The method for regenerating a semiconductor substrate, wherein the mixed solution further contains nitrous acid .
絶縁層を介して、前記半導体基板とベース基板とを貼り合わせ、
熱処理によって、前記半導体基板を分離して、前記ベース基板上に半導体層を形成するＳＯＩ基板の作製方法。 In the semiconductor substrate which is reproduced through a reproducing method of a semiconductor substrate according to claims 1 to 3, to form an embrittled region by adding ions,
Via an insulating layer, bonding the said semi-conductor substrate and the base substrate,
By heat treatment, the separated semi conductor substrate, the method for manufacturing an SOI substrate forming the semiconductor layer on the base substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011277012A JP5865057B2 (en) | 2011-12-19 | 2011-12-19 | Semiconductor substrate recycling method and SOI substrate manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011277012A JP5865057B2 (en) | 2011-12-19 | 2011-12-19 | Semiconductor substrate recycling method and SOI substrate manufacturing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013128047A JP2013128047A (en) | 2013-06-27 |
| JP2013128047A5 true JP2013128047A5 (en) | 2014-11-06 |
| JP5865057B2 JP5865057B2 (en) | 2016-02-17 |
Family
ID=48778421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011277012A Expired - Fee Related JP5865057B2 (en) | 2011-12-19 | 2011-12-19 | Semiconductor substrate recycling method and SOI substrate manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5865057B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6471650B2 (en) * | 2015-08-27 | 2019-02-20 | 株式会社Sumco | Manufacturing method of SOI wafer and SOI wafer |
| JP6524862B2 (en) | 2015-08-27 | 2019-06-05 | 株式会社Sumco | SOI wafer manufacturing method and SOI wafer |
| JP7345966B2 (en) * | 2019-06-24 | 2023-09-19 | 株式会社ディスコ | How to reclaim wafers |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4772258B2 (en) * | 2002-08-23 | 2011-09-14 | シャープ株式会社 | Manufacturing method of SOI substrate |
| JP2005340643A (en) * | 2004-05-28 | 2005-12-08 | Sharp Corp | Manufacturing method of semiconductor substrate for solar cell |
| US20100022070A1 (en) * | 2008-07-22 | 2010-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
| WO2010150671A1 (en) * | 2009-06-24 | 2010-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate and method for manufacturing soi substrate |
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2011
- 2011-12-19 JP JP2011277012A patent/JP5865057B2/en not_active Expired - Fee Related
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