JP2013118411A5 - - Google Patents

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Publication number
JP2013118411A5
JP2013118411A5 JP2013046951A JP2013046951A JP2013118411A5 JP 2013118411 A5 JP2013118411 A5 JP 2013118411A5 JP 2013046951 A JP2013046951 A JP 2013046951A JP 2013046951 A JP2013046951 A JP 2013046951A JP 2013118411 A5 JP2013118411 A5 JP 2013118411A5
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Japan
Prior art keywords
gas
processing
substrate
separation
activated
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JP2013046951A
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English (en)
Japanese (ja)
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JP5549754B2 (ja
JP2013118411A (ja
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Publication of JP2013118411A5 publication Critical patent/JP2013118411A5/ja
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JP2013046951A 2008-08-29 2013-03-08 成膜装置 Active JP5549754B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013046951A JP5549754B2 (ja) 2008-08-29 2013-03-08 成膜装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008222740 2008-08-29
JP2008222740 2008-08-29
JP2009061605 2009-03-13
JP2009061605 2009-03-13
JP2013046951A JP5549754B2 (ja) 2008-08-29 2013-03-08 成膜装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009172948A Division JP5423205B2 (ja) 2008-08-29 2009-07-24 成膜装置

Publications (3)

Publication Number Publication Date
JP2013118411A JP2013118411A (ja) 2013-06-13
JP2013118411A5 true JP2013118411A5 (enrdf_load_stackoverflow) 2013-08-08
JP5549754B2 JP5549754B2 (ja) 2014-07-16

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ID=48712714

Family Applications (1)

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JP2013046951A Active JP5549754B2 (ja) 2008-08-29 2013-03-08 成膜装置

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JP (1) JP5549754B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6146160B2 (ja) * 2013-06-26 2017-06-14 東京エレクトロン株式会社 成膜方法、記憶媒体及び成膜装置
JP6307316B2 (ja) * 2014-03-19 2018-04-04 株式会社日立国際電気 基板処理装置、及び半導体装置の製造方法
JP6426999B2 (ja) * 2014-12-18 2018-11-21 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6407762B2 (ja) 2015-02-23 2018-10-17 東京エレクトロン株式会社 成膜装置
JP7170598B2 (ja) * 2019-07-17 2022-11-14 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7209598B2 (ja) * 2019-07-26 2023-01-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60008241T2 (de) * 1999-05-13 2004-07-01 Emf Ireland Ltd., Riverstown Verfahren und vorrichtung zum epitaktischem wachsen eines materials auf einem substrat
JP3957549B2 (ja) * 2002-04-05 2007-08-15 株式会社日立国際電気 基板処埋装置
US7645630B2 (en) * 2003-02-18 2010-01-12 Konica Minolta Holdings, Inc. Manufacturing method for thin-film transistor
DE102004056170A1 (de) * 2004-08-06 2006-03-16 Aixtron Ag Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
US20070218702A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor

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