JP2013115387A5 - Piezoelectric element, liquid ejecting head, liquid ejecting apparatus, ultrasonic device and sensor - Google Patents
Piezoelectric element, liquid ejecting head, liquid ejecting apparatus, ultrasonic device and sensor Download PDFInfo
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- JP2013115387A5 JP2013115387A5 JP2011263084A JP2011263084A JP2013115387A5 JP 2013115387 A5 JP2013115387 A5 JP 2013115387A5 JP 2011263084 A JP2011263084 A JP 2011263084A JP 2011263084 A JP2011263084 A JP 2011263084A JP 2013115387 A5 JP2013115387 A5 JP 2013115387A5
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- liquid ejecting
- piezoelectric element
- monoclinic
- sensor
- piezoelectric layer
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- 239000007788 liquid Substances 0.000 title claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium(0) Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
Description
上記課題を解決する本発明の態様は、少なくともビスマス、バリウム、鉄、及びチタンを含むペロブスカイト型構造の複合酸化物からなる圧電体層と、前記圧電体層に電圧を印加する電極と、を具備する圧電素子であって、 前記圧電体層は、引張り応力により菱面晶から単斜晶へ変化しており、 駆動時において、電圧を印加することにより前記圧電体層が単斜晶から菱面晶へ変化することを特徴とする圧電素子にある。
かかる態様では、鉛の含有量が少なく、且つ従来とは異なる組成で電界誘起相転移による駆動を行うことができ、また、比較的低電圧で比較的大きな歪を得ることができる圧電素子を実現することができる。
An aspect of the present invention that solves the above problems includes a piezoelectric layer made of a composite oxide having a perovskite structure including at least bismuth, barium, iron, and titanium, and an electrode that applies a voltage to the piezoelectric layer. The piezoelectric layer is changed from rhombohedral to monoclinic due to tensile stress, and the piezoelectric layer is changed from monoclinic to rhomboid by applying voltage during driving. The piezoelectric element is characterized by changing to a crystal.
In this embodiment, a piezoelectric element that has a low lead content, can be driven by an electric field induced phase transition with a composition different from the conventional one, and can obtain a relatively large strain at a relatively low voltage is realized. can do.
本発明の他の態様は、上記圧電素子を具備することを特徴とする液体噴射ヘッド、当該液体噴射ヘッドを具備することを特徴とする液体噴射装置、上記圧電素子を具備することを特徴とする超音波デバイス、あるいは、上記圧電素子を具備することを特徴とするセンサーにある。
かかる態様では、鉛の含有量が少なく、且つ従来とは異なる組成で電界誘起相転移による駆動を行うことができ、また、比較的低電圧で比較的大きな歪を得ることができるため、環境への負荷を低減し且つ信頼性に優れた液体噴射ヘッド、液体噴射装置、超音波デバイス、あるいはセンサーを実現することができる。
According to another aspect of the invention, a liquid ejecting head including the piezoelectric element, a liquid ejecting apparatus including the liquid ejecting head, and the piezoelectric element are provided. An ultrasonic device or a sensor including the piezoelectric element is provided .
In such an embodiment, the lead content is low, and driving by electric field induced phase transition can be performed with a composition different from the conventional one, and a relatively large strain can be obtained at a relatively low voltage. It is possible to realize a liquid ejecting head, a liquid ejecting apparatus , an ultrasonic device, or a sensor that reduces the load on the surface and is excellent in reliability.
本実施形態の圧電体層７０は、詳細は後述するが、引張り応力により菱面晶から単斜晶へ変化しており、駆動時において、電圧を印加することにより単斜晶から菱面晶へ変化する。すなわち、圧電体層７０は、本来、菱面晶になる組成であるが、基板から引張り応力（外部歪）を受けて単斜晶となっている。そして、かかる圧電体層７０は、例えば、２０Ｖの駆動電圧で駆動することにより、駆動の際に単斜晶から菱面晶へ相転移が生じる。すなわち、圧電体層７０を含む圧電素子３００は、通常では菱面晶になる組成であるが、引駆動状態において基板からの引張り応力を与えることにより単斜晶とし、駆動により電界誘起歪が生じるようにしたものであり、結果的に大きな歪が得られる。 Although details will be described later, the piezoelectric layer 70 of the present embodiment changes from rhombohedral to monoclinic due to tensile stress, and from driving to monoclinic by applying voltage during driving. Change. That is, the piezoelectric layer 70 originally has a rhombohedral composition, but is monoclinic due to tensile stress (external strain) from the substrate. The piezoelectric layer 70 is driven with a driving voltage of 20 V, for example, so that phase transition from monoclinic to rhombohedral occurs during driving. That is, the piezoelectric element 300 including the piezoelectric layer 70 has a composition that is usually rhombohedral, but is monoclinic by applying tensile stress from the substrate in the pulling driving state, and electric field induced strain is generated by driving. As a result, a large distortion is obtained.
したがって、例えばｘ＝０．８３９、膜厚５００ｎｍ、無電界状態での応力がゼロのＢＦＯ−ＢＴにおいて２０Ｖの電圧印加で単斜晶から菱面晶への相転移が起こる。同様に、ｘ＝０．９３７、膜厚５００ｎｍ、基板応力による外部歪が０．０１であるＢＦＯ−ＢＴでは、２０Ｖの電圧印加で単斜晶から菱面晶への相転移が起こる。 Therefore, for example, in BFO-BT where x = 0.839, film thickness of 500 nm, and no stress in an electric field state, a phase transition from monoclinic to rhombohedral occurs when a voltage of 20 V is applied. Similarly, in BFO-BT where x = 0.937, film thickness 500 nm, and external strain due to substrate stress is 0.01, a phase transition from monoclinic to rhombohedral occurs when a voltage of 20 V is applied.
この結果、ｘ＝０．９３７、膜厚５００ｎｍ、外部応力（引張り応力）０．０１の圧電体層においては、２０Ｖの電圧印加で単斜晶から菱面晶への相転移が起こることが確認され、上述した計算結果と非常に良い一致を示すことがあきらかとなった。
As a result, it was confirmed that in the piezoelectric layer with x = 0.937, film thickness 500 nm, and external stress (tensile stress) 0.01, a phase transition from monoclinic to rhombohedral occurs when a voltage of 20 V is applied. It has become clear that the calculation results described above agree very well.
Claims (6)
前記圧電体層は、引張り応力により菱面晶から単斜晶へ変化しており、
駆動時において、電圧を印加することにより前記圧電体層が単斜晶から菱面晶へ変化することを特徴とする圧電素子。 A piezoelectric element comprising: a piezoelectric layer made of a composite oxide having a perovskite structure including at least bismuth, barium, iron, and titanium; and an electrode for applying a voltage to the piezoelectric layer,
The piezoelectric layer is changed from rhombohedral to monoclinic due to tensile stress,
During driving, a piezoelectric element, wherein the piezoelectric layer by applying a voltage changes from monoclinic to rhombohedral.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011263084A JP5950076B2 (en) | 2011-11-30 | 2011-11-30 | Piezoelectric element, liquid ejecting head, liquid ejecting apparatus, ultrasonic device and sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011263084A JP5950076B2 (en) | 2011-11-30 | 2011-11-30 | Piezoelectric element, liquid ejecting head, liquid ejecting apparatus, ultrasonic device and sensor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013115387A JP2013115387A (en) | 2013-06-10 |
| JP2013115387A5 true JP2013115387A5 (en) | 2015-01-22 |
| JP5950076B2 JP5950076B2 (en) | 2016-07-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2011263084A Expired - Fee Related JP5950076B2 (en) | 2011-11-30 | 2011-11-30 | Piezoelectric element, liquid ejecting head, liquid ejecting apparatus, ultrasonic device and sensor |
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Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008311634A (en) * | 2007-05-14 | 2008-12-25 | Fujifilm Corp | Piezoelectric element, method for driving the same, piezoelectric device, and liquid discharge device |
| JP5561463B2 (en) * | 2009-02-24 | 2014-07-30 | セイコーエプソン株式会社 | Liquid ejecting head manufacturing method, liquid ejecting head, and liquid ejecting apparatus |
| JP5681398B2 (en) * | 2009-07-09 | 2015-03-04 | 富士フイルム株式会社 | Perovskite oxide, ferroelectric composition, piezoelectric body, piezoelectric element, and liquid ejection device |
| JP5839157B2 (en) * | 2010-03-02 | 2016-01-06 | セイコーエプソン株式会社 | Liquid ejecting head, liquid ejecting apparatus, piezoelectric element, ultrasonic sensor and infrared sensor |
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