JP2013112846A - Plating processing apparatus, plating processing method and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plating processing apparatus capable of efficiently and uniformly heating a substrate, and preventing an exhausted plating liquid from mixing with temperature control water, etc. so that the plating liquid can be recycled easily.SOLUTION: The plating processing apparatus 20 includes a substrate holding mechanism 110 for holding and rotating the substrate W, a discharging mechanism 21 for discharging the plating liquid 35 toward the substrate W held by the substrate holding mechanism 110, and a gas sending mechanism 190 for sending high-temperature gas G for heating composed of gas whose specific heat capacity is higher than air toward the substrate W held by the substrate holding mechanism 110. The gas sending mechanism 190 is configured so as to send more gas G for heating to the peripheral region Aof the substrate W than to a central region Aof the substrate W.

Description

  The present invention relates to a plating apparatus, a plating method, and a storage medium that perform plating by supplying a plating solution to the surface of a substrate.

  In general, a substrate such as a semiconductor wafer or a liquid crystal substrate is provided with wiring for forming a circuit on its surface. For this wiring, instead of an aluminum material, a copper material having a low electrical resistance and a high reliability has come to be used. However, since copper is more easily oxidized than aluminum, it is desirable to perform plating with a metal having high electromigration resistance in order to prevent oxidation of the copper wiring surface.

  The plating process is performed, for example, by supplying an electroless plating solution to the surface of the substrate on which the copper wiring is formed. For example, Patent Document 1 proposes a plating apparatus including a substrate holding mechanism that rotatably holds a substrate and a nozzle that discharges a plating solution onto the rotating substrate.

JP 2009-249679 A

  By the way, it is necessary to control the temperature of the substrate during the plating process. Thus, when performing temperature control of a board | substrate, in addition to supplying the plating solution heated at high temperature with respect to a board | substrate, supplying back surface temperature control water to the back surface of a board | substrate and heating is performed. However, when using the back surface temperature-controlled water, both the plating solution and the back surface temperature-controlled water are mixed in the waste liquid generated during and after the plating process. In general, since the plating solution is expensive, it is desired to separate and reuse the plating solution from the waste solution. However, if both the plating solution and the back surface temperature-adjusted water are mixed in the waste solution, it may be difficult to separate the plating solution from the waste solution and reuse the plating solution.

  Moreover, when supplying a plating solution onto a rotating substrate as in the plating apparatus described in Patent Document 1, the plating solution flows from the center side of the substrate toward the peripheral side by centrifugal force. In this case, it is considered that the temperature of the plating solution on the substrate decreases as it goes toward the peripheral edge of the substrate. For this reason, it is conceivable that the reaction condition of the plating solution varies depending on the position on the substrate.

  The present invention has been made in consideration of such points, and can efficiently and uniformly heat the substrate, prevent temperature-controlled water from being mixed with the discharged plating solution, and perform plating. A plating apparatus, a plating method, and a storage medium capable of easily reusing a liquid are provided.

  According to an embodiment of the present invention, a plating apparatus for supplying a plating solution to a substrate to perform plating processing includes: a substrate holding mechanism that holds and rotates the substrate; and the substrate held by the substrate holding mechanism. A discharge mechanism that discharges the plating solution toward the substrate, and a gas delivery mechanism that sends out a high-temperature heating gas made of a gas having a higher specific heat capacity than air toward the substrate held by the substrate holding mechanism, The gas delivery mechanism is configured to deliver more heating gas toward a peripheral region of the substrate than a central region of the substrate.

  According to an embodiment of the present invention, a plating method for supplying a plating solution to a substrate and performing a plating process includes a holding step of holding the substrate by a substrate holding mechanism, a step of rotating the substrate, And a plating step of discharging the plating solution from the discharge mechanism toward the substrate held by the substrate holding mechanism with a high-temperature heating gas composed of a gas having a higher specific heat capacity than air. The heating gas is sent out more toward the peripheral region of the substrate than the central region of the substrate in the gas delivery step.

  According to an embodiment of the present invention, a storage medium storing a computer program for causing a plating apparatus to execute a plating method includes a holding step in which the plating method holds the substrate by a substrate holding mechanism; A step of rotating the substrate, and a plating step of discharging the plating solution from the discharge mechanism toward the substrate, wherein the plating step uses a high-temperature heating gas composed of a gas having a higher specific heat capacity than air. A gas delivery step of sending out toward the substrate held by a holding mechanism, wherein in the gas delivery step, the heating gas is sent out more toward the peripheral region of the substrate than in the central region of the substrate. It is characterized by comprising.

  According to the present invention, a high-temperature heating gas made of a gas having a specific heat capacity higher than that of air is sent out toward the substrate held by the substrate holding mechanism. For this reason, while being able to heat a board | substrate efficiently, temperature control water etc. are prevented from mixing with the plating solution discharged | emitted, and a plating solution can be reused easily. Further, the heating gas is sent out more toward the peripheral region of the substrate than in the central region of the substrate. For this reason, the peripheral area | region of a board | substrate can be heated more significantly rather than the center area | region of a board | substrate. Therefore, it is possible to suppress the heat of the plating solution from being taken away by the substrate and the surrounding atmosphere in the peripheral region of the substrate, and thereby, the temperature of the plating solution in the peripheral region of the substrate and the temperature of the plating solution in the central region of the substrate. It can suppress that a difference arises between.

FIG. 1 is a plan view showing the overall configuration of a plating system according to an embodiment of the present invention. FIG. 2A is a side view showing a plating apparatus according to an embodiment of the present invention. FIG. 2B is a diagram showing an example of a lower delivery port provided in the back plate shown in FIG. 2A. FIG. 2C is a diagram showing an example of a lower delivery port provided in the back plate shown in FIG. 2A. FIG. 2D is a diagram showing an example of a lower delivery port provided in the back plate shown in FIG. 2A. FIG. 3 is a plan view of the plating apparatus shown in FIG. 2A. FIG. 4 is a schematic view showing the flow of a plating solution and a heating gas in the plating apparatus according to one embodiment of the present invention. FIG. 5 is a flowchart showing a plating method according to an embodiment of the present invention. FIG. 6 is a schematic view showing a modification of the plating apparatus. FIG. 7 is a schematic view showing a modification of the plating apparatus. FIG. 8A is a schematic diagram illustrating a modification of the plating apparatus. FIG. 8B is a diagram showing an example of an upper delivery port provided in the top plate shown in FIG. 8A. FIG. 8C is a diagram showing an example of an upper delivery port provided in the top plate shown in FIG. 8A. FIG. 8D is a diagram showing an example of an upper delivery port provided in the top plate shown in FIG. 8A. FIG. 9A is a diagram showing the measurement results of the temperature distribution on the substrate in Examples and Comparative Examples, and FIG. 9B is the thickness of the plating layer formed on the substrate in Examples and Comparative Examples. FIG.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS. First, referring to FIG. 1, the overall configuration of the plating system 90 in the present embodiment will be described.

Plating Processing System As shown in FIG. 1, the plating processing system 90 places a carrier 91 that accommodates a plurality (for example, 25) of substrates W (here, semiconductor wafers), and carries a predetermined number of substrates W. And a substrate loading / unloading chamber 92 for unloading and a substrate processing chamber 93 for performing various processes such as plating and cleaning of the substrate W. The substrate carry-in / out chamber 92 and the substrate processing chamber 93 are provided adjacent to each other.

(Board loading / unloading room)
The substrate carry-in / out chamber 92 includes a carrier placement portion 94, a transfer chamber 96 that stores a transfer device 95, and a substrate transfer chamber 98 that stores a substrate transfer table 97. In the substrate loading / unloading chamber 92, the transfer chamber 96 and the substrate delivery chamber 98 are connected in communication via a delivery port 99. A plurality of carriers 91 that accommodate a plurality of substrates W in a horizontal state are placed on the carrier placing portion 94. In the transfer chamber 96, the substrate W is transferred, and in the substrate transfer chamber 98, the substrate W is transferred to and from the substrate processing chamber 93.

  In such a substrate loading / unloading chamber 92, a predetermined number of substrates W are transported by the transport device 95 between any one carrier 91 placed on the carrier placing portion 94 and the substrate delivery table 97. The

(Substrate processing room)
In addition, the substrate processing chamber 93 is arranged in the front and back (right and left in FIG. 1) in the center, and arranged side by side on one side and the other side of the substrate transport unit 87, and supplies the plating solution to the substrate W. And a plurality of plating processing apparatuses 20 that perform the plating process.

  Of these, the substrate transport unit 87 includes a substrate transport device 88 configured to be movable in the front-rear direction. The substrate transfer unit 87 communicates with the substrate transfer table 97 in the substrate transfer chamber 98 via the substrate transfer port 89.

  In such a substrate processing chamber 93, the substrates W are transported to the respective plating processing apparatuses 20 while being held horizontally one by one by the substrate transport device 88 of the substrate transport unit 87. In each plating apparatus 20, the substrate W is subjected to cleaning processing and plating processing one by one.

  Each plating apparatus 20 differs only in the plating solution used, and the other points have substantially the same configuration. Therefore, in the following description, the configuration of one plating processing apparatus 20 among the plurality of plating processing apparatuses 20 will be described.

Plating apparatus Next, with reference to FIGS. 2A and 3, it will be described plating apparatus 20. FIG. 2A is a side view showing the plating apparatus 20, and FIG. 3 is a plan view showing the plating apparatus 20.

  2A and 3, the plating apparatus 20 holds the substrate W inside the casing 101 and rotates the substrate W, and faces the surface of the substrate W held by the substrate holding mechanism 110. A discharge mechanism 21 that discharges the plating solution and a plating solution supply mechanism 30 that is connected to the discharge mechanism 21 and supplies the plating solution to the discharge mechanism 21 are provided.

  Among these, around the substrate holding mechanism 110, a liquid discharge mechanism 140 that discharges the plating solution scattered from the substrate W is disposed. Further, below the substrate W (on the back side of the substrate W), a gas that sends out a high-temperature heating gas G made of a gas having a higher specific heat capacity than air toward the back surface of the substrate W held by the substrate holding mechanism 110. A delivery mechanism 190 is provided. The gas delivery mechanism 190 is connected to a gas supply mechanism 170 that heats the heating gas G and supplies it to the gas delivery mechanism 190. Further, a control mechanism 160 that controls the substrate holding mechanism 110, the discharge mechanism 21, the plating solution supply mechanism 30, the solution discharge mechanism 140, the gas supply mechanism 170, and the gas delivery mechanism 190 is provided. The “high temperature heating gas” means a heating gas heated to a temperature that can prevent the temperature of the plating solution discharged onto the substrate W from being lowered. For example, the temperature of the heating gas is set to a temperature substantially equal to the temperature of the plating solution discharged onto the substrate W or a temperature slightly higher than the temperature of the plating solution.

(Substrate holding mechanism)
As shown in FIGS. 2A and 3, the substrate holding mechanism 110 includes a hollow cylindrical rotary shaft member 111 extending vertically in the casing 101, a turntable 112 attached to the upper end portion of the rotary shaft member 111, A wafer chuck 113 that is provided on the outer peripheral portion of the upper surface of the turntable 112 and supports the substrate W, and a rotating mechanism 162 that is connected to the rotating shaft member 111 and rotates the rotating shaft member 111.

  Among these, the rotation mechanism 162 is controlled by the control mechanism 160 and rotates the rotation shaft member 111, whereby the substrate W supported by the wafer chuck 113 is rotated. In this case, the control mechanism 160 can rotate or stop the rotation shaft member 111 and the wafer chuck 113 by controlling the rotation mechanism 162. Further, the control mechanism 160 can control the rotational speed of the rotating shaft member 111 and the wafer chuck 113 to be increased, decreased, or maintained at a constant value.

  Further, a back plate 171 is disposed on the back side of the substrate W and above the turntable 112 with a gap S from the substrate W. The back plate 171 faces the back surface of the substrate W held on the wafer chuck 113 and is disposed between the substrate W held on the wafer chuck 113 and the turntable 112. The back plate 171 is connected and fixed to a shaft 172 that passes through the axis of the rotary shaft member 111. The back plate 171 may incorporate a heater. Further, an elevating mechanism 179 such as an air cylinder is connected to the lower end portion of the shaft 172. That is, the back plate 171 is configured to move up and down between the substrate W held by the wafer chuck 113 and the turntable 112 by the lifting mechanism 179 and the shaft 172.

  A first flow path 174 that communicates with a plurality of openings 173 provided on the surface is formed in the back plate 171, and passes through the first flow path 174 and the shaft center of the shaft 172. A fluid supply path 175 communicates with the fluid supply path 175. The fluid supply path 175 is connected to a back surface processing liquid supply mechanism 145 that supplies a processing liquid to the back surface of the substrate W via a valve 146.

  Further, the back plate 171 has an opening (lower outlet) 191 provided on the surface thereof, and a second flow path 192 formed inside the back plate 171. Among these, the second flow path 192 communicates with the lower delivery port 191 and also communicates with the gas supply path 193 penetrating the shaft 172 up and down. This gas supply path 193 is connected to a gas supply mechanism 170 described later via a valve 188. That is, the lower outlet 191 provided in the back plate 171 has an action of supplying the high-temperature heating gas G heated by the gas supply mechanism 170 toward the back surface of the substrate W. The lower delivery port 191, the second flow path 192, and the gas supply path 193 function as components of the gas delivery mechanism 190 that sends out the high-temperature heating gas G toward the back surface of the substrate W. Details of the gas delivery mechanism 190 will be described later.

(Discharge mechanism)
Next, the discharge mechanism 21 that discharges a plating solution or the like toward the substrate W will be described. The discharge mechanism 21 includes a first discharge nozzle 45 that discharges a chemical reduction type plating solution such as a CoP plating solution toward the substrate W. The chemical reduction type plating solution is supplied from the plating solution supply mechanism 30 to the first discharge nozzle 45. Although only one first discharge nozzle 45 is shown in FIG. 2A, in addition to the first discharge nozzle 45, another chemical discharge type plating solution such as a CoP plating solution is discharged toward the substrate W. A discharge nozzle (additional discharge nozzle) may be provided.

  The discharge mechanism 21 may further include a second discharge nozzle 70 including a discharge port 71 and a discharge port 72, as shown in FIG. 2A. As shown in FIGS. 2A and 3, the second discharge nozzle 70 is attached to the distal end portion of the arm 74, and this arm 74 can be extended in the vertical direction and is supported by being rotated by the rotation mechanism 165. It is fixed to the shaft 73.

  In the second discharge nozzle 70, the discharge port 71 is connected via a valve 76a to a plating solution supply mechanism 76 that supplies a replacement type plating solution, for example, a Pd plating solution. The discharge port 72 is connected to a cleaning process liquid supply mechanism 77 that supplies a cleaning process liquid via a valve 77a. By providing the second discharge nozzle 70 as described above, not only the plating process using the chemical reduction type plating solution but also the plating process using the replacement type plating solution and the cleaning process are performed in one plating processing apparatus 20. It becomes possible.

  Further, as shown in FIG. 2A, a rinsing liquid for supplying a pretreatment liquid for a pretreatment performed prior to the plating process, for example, a rinsing liquid such as pure water, to the discharge port 72 of the second discharge nozzle 70. The supply mechanism 78 may be further connected via a valve 78a. In this case, either the cleaning process liquid or the rinse process liquid is selectively discharged from the second discharge nozzle 70 onto the substrate W by appropriately controlling the opening and closing of the valve 77a and the valve 78a.

  Next, the first discharge nozzle 45 will be described. As shown in FIGS. 2A and 3, the first discharge nozzle 45 includes a discharge port 46. The first discharge nozzle 45 is attached to the tip of an arm 49, and the arm 49 is configured to be movable back and forth in the radial direction of the substrate W (the direction indicated by the arrow D in FIGS. 2A and 3). May be. In this case, the first discharge nozzle 45 is movable between a central position close to the central portion of the substrate W and a peripheral position closer to the peripheral side than the central position.

(Plating solution supply mechanism)
Next, the plating solution supply mechanism 30 for supplying a chemical reduction type plating solution such as a CoP plating solution to the first discharge nozzle 45 of the discharge mechanism 21 will be described. FIG. 4 is a schematic diagram showing the flow of the plating solution and the heating gas G in the plating apparatus 20.

  As shown in FIG. 4, the plating solution supply mechanism 30 supplies a plating solution supply tank 31 that stores the plating solution 35, and supplies the plating solution 35 in the plating solution supply tank 31 to the first discharge nozzle 45 of the discharge mechanism 21. Tube 33.

  Further, as shown in FIG. 4, tank heating means 50 for heating the plating solution 35 to the storage temperature is attached to the plating solution supply tank 31. Further, between the tank heating means 50 and the first discharge nozzle 45, the temperature of the plating solution 35 toward the first discharge nozzle 45 of the discharge mechanism 21 is adjusted to a supply pipe 33 by heating to a discharge temperature higher than the storage temperature. A heating means 60 is attached.

Various chemical solutions are supplied to the plating solution supply tank 31 from a plurality of chemical solution supply sources (not shown) in which various components of the plating solution 35 are stored. For example, chemical solutions such as CoSO ₄ metal salts containing Co ions, reducing agents (for example, hypophosphorous acid, etc.), ammonia, and additives are supplied. At this time, the flow rates of various chemical solutions are adjusted so that the components of the plating solution 35 stored in the plating solution supply tank 31 are appropriately adjusted.

  As shown in FIG. 4, the heating means 60 is for heating the plating solution 35 heated to the storage temperature by the tank heating means 50 to the discharge temperature. The heating means 60 is attached to the supply medium 33 and the temperature medium supply means 61 for heating the heat transfer medium 66 such as temperature-controlled water to a discharge temperature or a temperature higher than the discharge temperature. It has a temperature control pipe 65 that controls the temperature by conducting the heat of the heat medium 66 to the plating solution 35 in the supply pipe 33.

  By the way, when the plating solution heated by the plating solution supply mechanism 30 is discharged toward the central region of the rotating substrate W by using the discharge mechanism 21, the plating solution is on the center side of the substrate W by centrifugal force. It flows from the edge toward the periphery. At this time, if the temperature of the substrate W or the temperature of the atmosphere around the substrate W is lower than the temperature of the plating solution, the heat of the plating solution is taken away by the atmosphere of the substrate W or the periphery of the substrate W. The temperature of the plating solution becomes lower as it flows toward the peripheral side of the plate. For this reason, it is conceivable that the reaction condition of the plating solution varies depending on the position on the substrate. As one method for solving such a problem, it is conceivable to uniformly increase the temperature of the atmosphere around the substrate W, thereby preventing the temperature of the plating solution from decreasing. However, in this case, if the temperature of the atmosphere is too high, the temperature of the plating solution increases as it flows toward the peripheral side of the substrate W, and eventually the reaction conditions of the plating solution vary depending on the position on the substrate. Become. It is also conceivable that the plating solution and other members are deteriorated by heat by uniformly increasing the temperature of the atmosphere.

  Here, according to the gas delivery mechanism 190 in the present embodiment, the temperature of the atmosphere around the substrate W is not increased uniformly, but the temperature of the atmosphere corresponding to the peripheral region of the substrate W is increased mainly. Can do. For this reason, the temperature distribution of the plating solution on the substrate W can be made substantially uniform regardless of the position easily and efficiently. Hereinafter, the gas delivery mechanism 190 will be described in detail.

The gas delivery mechanism 190 according to the present embodiment is configured to send more heating gas G toward the peripheral region of the substrate W than the central region of the substrate W. For example, the lower delivery port 191 described above has a larger amount of the heating gas G sprayed per unit area in the peripheral region of the substrate W than the amount of the heating gas G sprayed per unit area in the central region of the substrate W. The back plate 171 is formed so as to be larger. Accordingly, the temperature of the atmosphere corresponding to the peripheral region of the substrate W can be made higher than the temperature of the atmosphere corresponding to the central region of the substrate W. 2A, when the substrate W is partitioned by drawing a circle W ′ having a radius ½ of the radius of the substrate W concentrically with the substrate W, as indicated by reference signs A ₁ and A ₂ , region of the center side is defined as a central region a _1, the area of the peripheral side is defined as the peripheral region a _2.

The specific configuration of the lower delivery port 191 is not particularly limited, and it is said that “the peripheral region A ₂ has a larger amount of the heating gas G sprayed per unit area than the central region A ₁ ”. Various configurations can be adopted as long as the conditions are satisfied. Hereinafter, an example of the lower delivery port 191 formed in the back plate 171 will be described with reference to FIGS. 2B to 2D. 2B to 2D are each a plan view showing an example of a back plate 171 in which a lower delivery port 191 is formed. 2B to 2D, the substrate W is indicated by a dotted line in order to show the correspondence with the substrate W disposed above the back plate 171.

For example, as shown in FIG. 2B, a plurality of circular lower delivery ports 191 may be formed in the back plate 171 in a line along the radial direction of the substrate W. Further, as shown in FIG. 2C, a large number of circular lower delivery ports 191 arranged on concentric circles of the substrate W may be formed in the back plate 171. Alternatively, as shown in FIG. 2D, a slit-like lower delivery port 191 that extends along the circumferential direction of the substrate W may be formed in the back plate 171. When the temperature and pressure of the heating gas G delivered from each lower delivery port 191 are the same, the above-mentioned condition is that “the back plate 171 is formed in a region corresponding to the peripheral region A ₂ of the substrate W. towards the area of the lower outlet 191, than the area of the lower outlet 191 which is formed in a region corresponding to the central region a ₁ of the substrate W, becomes large when compared per unit area of the substrate W Is equal to

In FIG. 2B through 2D, in a back plate 171, the lower delivery port 191 is formed also in a region corresponding to the central region A ₁ of the substrate W not only a region corresponding to the peripheral area A ₂ of the substrate W An example is shown. However, it is not limited thereto, the lower outlet 191 may only be formed in a region corresponding to the peripheral area A ₂ of the substrate W out of the back plate 171.

(Gas supply mechanism)
As described above, the gas supply mechanism 170 heats the heating gas G having a specific heat capacity higher than that of air and supplies it to the gas delivery mechanism 190. As shown in FIG. 4, such a gas supply mechanism 170 includes a gas supply tank 181 that stores the heating gas G, and a gas that supplies the heating gas G stored in the gas supply tank 181 to the gas supply path 193. And a supply pipe 182. The gas supply tank 181 is connected to a gas temperature adjustment unit 183 for adjusting the heating temperature of the heating gas G, whereby the heating gas G is heated to a predetermined temperature.

  Such a heating gas G has a specific heat capacity higher than that of air (specific heat capacity 1.0 (J / g · K)). Specifically, for example, water vapor (specific heat capacity 2.1 (J / g) K)) and helium (specific heat capacity 5.2 (J / g · K)). Among these, it is preferable to use water vapor from the viewpoint of cost and the like.

  When water vapor is used as the heating gas G, the heating gas G supplied to the gas supply path 193 of the gas delivery mechanism 190 is not necessarily limited to that supplied from the gas supply tank 181. As shown in FIG. 4, the gas supply path 193 and the temperature medium supply means 61 of the heating means 60 are connected via a gas supply pipe 185, and water vapor present in the gas phase of the temperature medium supply means 61 is supplied to the gas supply path 193. You may supply to. Further, the gas supply path 193 and the plating solution supply tank 31 of the plating solution supply mechanism 30 are connected via the gas supply pipe 184, and water vapor existing in the gas phase of the plating solution supply tank 31 is heated in the gas supply passage 193. The gas G may be supplied. In this case, any one or two of the water vapor from the temperature medium supply means 61, the water vapor from the plating solution supply tank 31, and the water vapor from the gas supply tank 181 may be used. good.

  Further, as shown in FIG. 4, an additional gas supply unit 187 may be provided, and the gas supply path 193 of the gas delivery mechanism 190 and the additional gas supply unit 187 may be connected via a gas supply pipe 186. In this case, the additional gas supply unit 187 supplies at least one of the components (for example, ammonia) contained in the plating solution 35 to the heating gas G in the gas supply path 193, and supplies these mixed gases. It may be supplied to the substrate W. Further, a component (for example, ammonia) of the plating solution 35 existing in the vapor phase of the plating solution supply tank 31 is supplied to the heating gas G in the gas supply path 193 through the gas supply pipe 184, and these mixed gases are supplied. It may be supplied to the substrate W. In this case, the component from the additional gas supply unit 187 may be used alone, the component from the plating solution supply tank 31 may be used alone, or the component from the additional gas supply unit 187 and the plating solution may be used. A component from the supply tank 31 may be used in combination. Thus, by supplying the component of the plating solution 35 toward the substrate W, the component is prevented from volatilizing from the plating solution 35 during the plating process, or volatilized from the plating solution 35 during the plating process. The component can be supplemented to the plating solution 35.

(Liquid discharge mechanism)
Next, a liquid discharge mechanism 140 that discharges the plating solution, the cleaning solution, and the like scattered from the substrate W will be described with reference to FIG. 2A.

  The liquid discharge mechanism 140 is provided around the substrate holding mechanism 110, and includes a cup 105 having discharge ports 124, 129, and 134, an elevating mechanism 164 that is connected to the cup 105 and drives the cup 105 to move up and down, and a cup. 105, liquid discharge paths 120, 125, and 130 for collecting and discharging the plating solution and the like scattered from the substrate W to the discharge ports 124, 129, and 134, respectively. As shown in FIG. 2A, an opening 105 a is formed in the upper part of the cup 105.

  In this case, the processing liquid scattered from the substrate W is discharged through the liquid discharge paths 120, 125, and 130 via the discharge ports 124, 129, and 134 for each type of liquid. For example, the CoP plating solution scattered from the substrate W is discharged from the plating solution discharge passage 120, and the Pd plating solution scattered from the substrate W is discharged from the plating solution discharge passage 125 and scattered from the substrate W and the rinse treatment solution. Is discharged from the processing liquid discharge path 130. The CoP plating solution and the Pd plating solution thus discharged may be collected and then reused.

  The plating system 90 including a plurality of the plating apparatuses 20 configured as described above is driven and controlled by the control mechanism 160 according to various programs recorded in the storage medium 161 provided in the control mechanism 160, thereby Various processes are performed. Here, the storage medium 161 stores various programs such as various setting data and a plating processing program described later. As the storage medium 161, known media such as a computer-readable memory such as ROM and RAM, and a disk-shaped storage medium such as a hard disk, CD-ROM, DVD-ROM, and flexible disk can be used.

In the present embodiment, the plating system 90 and the plating apparatus 20 are driven and controlled to perform the plating process on the substrate W according to the plating process program recorded in the storage medium 161. In the following description, first, a method in which the Pd plating process is performed on the substrate W by displacement plating in one plating apparatus 20 and then the Co plating process is performed by chemical reduction plating will be described with reference to FIG.

(Substrate holding process)
First, using the substrate transfer device 88 of the substrate transfer unit 87, a single substrate W is transferred from the substrate delivery chamber 98 to the one plating apparatus 20.

  In the plating apparatus 20, first, the cup 105 is lowered to a predetermined position, and then the loaded substrate W is held by the wafer chuck 113 of the substrate holding mechanism 110 (substrate holding step S300). Thereafter, the cup 105 is raised by the elevating mechanism 164 to a position where the discharge port 134 of the liquid discharge mechanism 140 and the outer peripheral edge of the substrate W face each other.

(Washing process)
Next, a cleaning process including a rinse process, a pre-clean process, and a subsequent rinse process is executed (S301). First, the valve 78a of the rinse treatment liquid supply mechanism 78 is opened, whereby the rinse treatment liquid is supplied to the surface of the substrate W through the discharge port 72 of the second discharge nozzle 70.

  Next, a pre-cleaning process is performed. First, the valve 77a of the cleaning processing liquid supply mechanism 77 is opened, whereby the cleaning processing liquid is supplied to the surface of the substrate W through the discharge port 72 of the second discharge nozzle 70. For example, malic acid can be used as the cleaning treatment liquid, and pure water can be used as the rinse treatment liquid. Thereafter, in the same manner as described above, the rinse treatment liquid is supplied to the surface of the substrate W through the discharge port 72 of the second discharge nozzle 70. The rinse treatment liquid and the cleaning treatment liquid after the treatment are discarded through the discharge port 134 of the cup 105 and the treatment liquid discharge path 130. In both the cleaning step S301 and each of the following steps, the substrate W is rotated in the first rotation direction R1 (FIG. 3) by the substrate holding mechanism 110 unless otherwise specified.

(Pd plating process)
Next, a Pd plating process is performed (S302). This Pd plating step S302 is executed as a displacement plating process step while the substrate W after the pre-cleaning step is not dried. In this way, by performing the displacement plating process step in a state where the substrate W is not dried, it is possible to prevent the copper on the surface to be plated of the substrate W from being oxidized and being unable to perform the displacement plating process satisfactorily. it can.

  In the Pd plating process, first, the cup 105 is lowered by the elevating mechanism 164 to a position where the discharge port 129 of the liquid discharge mechanism 140 and the outer peripheral edge of the substrate W face each other. Next, the valve 76 a of the plating solution supply mechanism 76 is opened, whereby the plating solution containing Pd is discharged onto the surface of the substrate W at a desired flow rate through the discharge port 71 of the second discharge nozzle 70. In this way, the surface of the substrate W is subjected to Pd plating. The treated plating solution is discharged from the discharge port 129 of the cup 105. The plating solution discharged from the discharge port 129 is collected and reused or discarded via the solution discharge path 125.

(Rinsing process)
Next, for example, a rinsing process is performed as a pre-process performed prior to the Co plating process (S303). In the rinse treatment step S303, for example, a rinse treatment liquid is supplied to the surface of the substrate W as a pretreatment liquid. Note that after the rinsing process, the substrate W may be cleaned by a chemical process, and then a rinsing process may be performed using the rinse process liquid in order to clean the chemical liquid.

(Co plating process)
Thereafter, a Co plating step is performed in the same plating apparatus 20 as that in which the above-described steps S301 to S303 are performed (S304). This Co plating step S304 is performed as a chemical reduction plating treatment step.

  In the Co plating step S304, first, the control mechanism 160 controls the substrate holding mechanism 110 to rotate the substrate W held by the substrate holding mechanism 110. In this state, the plating solution 35 heated to the discharge temperature by the heating unit 60 is discharged from the discharge port 46 of the first discharge nozzle 45 toward the surface of the substrate W.

  A Co plating layer is formed on the Pd plating layer formed on the substrate W by discharging the plating solution 35 toward the substrate W using the first discharge nozzle 45. When the Co plating layer reaches a predetermined thickness, for example, 1 μm, the discharge of the plating solution 35 from the first discharge nozzle 45 is stopped, and the Co plating step S304 is completed. The time required for the Co plating step S304 can be, for example, about 20 minutes to 40 minutes.

  In the Co plating step S304, it is not necessary to always rotate the substrate W at a constant rotation number, and the rotation number may be temporarily increased or decreased, or the rotation may be temporarily stopped. Further, in the Co plating step S <b> 304, the first discharge nozzle 45 may be moved horizontally (scanned) from the center side of the substrate W toward the peripheral side of the substrate W.

  Further, in the Co plating step S304, the cup 105 is lowered by the elevating mechanism 164 to a position where the discharge port 124 and the outer peripheral edge of the substrate W face each other. For this reason, the treated plating solution 35 is discharged from the discharge port 124 of the cup 105. The treated plating solution 35 that has been discharged can be recovered and reused via the solution discharge path 120.

  By the way, in the present embodiment, in the Co plating step S304, the control mechanism 160 controls the gas delivery mechanism 190 almost simultaneously with the discharge of the plating solution 35 from the discharge port 46 of the first discharge nozzle 45, so A heating gas G (for example, water vapor) is sent out toward the back surface of the substrate W. That is, the gas delivery mechanism 190 converts the heating gas G stored in the gas supply tank 181 of the gas supply mechanism 170 and heated by the gas temperature control unit 183 into the gas supply pipe 182, the gas supply path 193, and the second flow. The material is sent out from the lower delivery port 191 of the back plate 171 toward the back surface of the substrate W through the path 192 sequentially. Alternatively, the gas delivery mechanism 190 sends the heating gas G supplied from the plating solution supply tank 31 or the temperature medium supply means 61 from the lower delivery port 191 of the back plate 171 toward the back surface of the substrate W.

The heating gas G is sent out by the gas delivery mechanism 190 continuously while the plating solution 35 is being discharged from the first discharge nozzle 45. During this time, the heating gas G exists in the gap S between the substrate W and the back plate 171 and continuously heats the substrate W. Further, the plating solution 35 is also heated by the heating gas G through the substrate W. In the present embodiment, a gas having a specific heat capacity higher than that of air, for example, water vapor, is used as the heating gas G, so that the substrate W can be efficiently heated. Further, as described above, the gas delivery mechanism 190 is configured to send more heating gas G toward the peripheral area A ₂ of the substrate W than the central area A _{1 of the} substrate W. For this reason, on the back surface side of the substrate W, the temperature of the atmosphere around the peripheral region A ₂ of the substrate W is higher than the temperature of the atmosphere around the central region A ₁ of the substrate W. As a result, it is possible to suppress the temperature of the plating solution 35 on the substrate W from becoming lower toward the peripheral side of the substrate W, and thereby the temperature distribution of the plating solution 35 on the substrate W is positioned. Regardless, it can be made substantially uniform. Accordingly, the growth of the plating layer can be made uniform in the plane of the substrate W. Thus, by intensively raising the temperature of the atmosphere corresponding to the peripheral area A ₂ of the substrate W, without excessively heating the plating solution 35 and other members, the plating solution 35 flows through a substrate W It is possible to compensate for the decrease in the temperature of the plating solution 35 caused by the above. For this reason, the uniform temperature distribution of the plating solution 35 on the substrate W can be efficiently realized.

  Thereafter, when the discharge of the plating solution 35 from the first discharge nozzle 45 is stopped, the supply of the heating gas G to the gas delivery mechanism 190 by the gas supply mechanism 170 is stopped, and thereby the heating by the gas delivery mechanism 190 is performed. The delivery of the gas G is stopped. Alternatively, the supply of the heating gas G by the gas supply mechanism 170 may be stopped before or after the discharge of the plating solution 35 from the first discharge nozzle 45 is stopped.

  In this manner, by sending the heated heating gas G from the lower delivery port 191 of the back plate 171 toward the back surface of the substrate W, the ambient temperature around the substrate W can be controlled. This can prevent the temperature of the plating solution from decreasing as the plating solution flows toward the peripheral edge of the substrate W. Thereby, the plating process can be performed in a state where the temperature is maintained at a constant temperature (for example, 60 to 90 ° C.), and the growth of the Co plating layer can be made uniform in the plane of the substrate W. Moreover, since the heating gas G supplied toward the substrate W is made of a gas, it is prevented that heating water or the like is mixed with the plating solution 35 discharged from the discharge port 124 of the cup 105 and discharged. The plating solution 35 after processing can be easily reused. In particular, in the Co plating step S304, the time required for the plating process may be as long as, for example, 20 minutes to 40 minutes. Therefore, by reusing the plating solution 35, the amount of waste liquid can be reduced more efficiently. .

  As described above, the heating gas G may contain at least one of the components contained in the plating solution 35 (for example, ammonia). In this case, it is possible to prevent the component from volatilizing from the plating solution 35 during the plating process, or to supplement the plating solution 35 with the component volatilized from the plating solution 35 during the plating process.

(Washing process)
Next, a cleaning step S305 including a rinsing process, a post-cleaning process, and a subsequent rinsing process is performed on the surface of the substrate W that has been subjected to the Co plating process. Since this cleaning step S305 is substantially the same as the above-described cleaning step S301, detailed description thereof is omitted.

(Drying process)
Thereafter, a drying process for drying the substrate W is executed (S306). For example, when the turntable 112 is rotated, the liquid adhering to the substrate W is blown outward by centrifugal force, thereby drying the substrate W. That is, the turntable 112 may have a function as a drying mechanism that dries the surface of the substrate W.

  In this way, in one plating apparatus 20, the surface of the substrate W is first subjected to Pd plating by displacement plating, and then subjected to Co plating by chemical reduction plating.

  Thereafter, the substrate W may be transported to another plating apparatus 20 for Au plating processing. In this case, in another plating apparatus 20, the surface of the substrate W is subjected to Au plating processing by displacement plating. The Au plating treatment method is substantially the same as the above-described method for Pd plating treatment except that the plating solution and the cleaning solution are different, and thus detailed description thereof is omitted.

(Operational effect of the present embodiment)
Thus, according to the present embodiment, as described above, the high-temperature heating gas G (for example, water vapor) having a higher specific heat capacity than air is sent toward the substrate W held by the substrate holding mechanism 110. The substrate W can be efficiently heated, and the growth of the plating layer by the plating solution 35 can be made uniform in the plane of the substrate W. Further, it is possible to prevent water and the like from being mixed with the plating solution discharged from the liquid discharge mechanism 140, and to easily reuse the plating solution.

Further, according to the present embodiment, the gas delivery mechanism 190 is configured to send more heating gas G toward the peripheral area A ₂ of the substrate W than the central area A _{1 of the} substrate W. Therefore, the temperature of the atmosphere around the peripheral area A ₂ of the substrate W can be intensively increased, Thus, without excessively heating the plating solution 35 and other members, the plating solution 35 is a substrate It is possible to compensate for a decrease in temperature caused by flowing at W. For this reason, the uniform temperature distribution of the plating solution 35 can be efficiently realized.

Modified Examples Hereinafter, modified examples of the present embodiment will be described.

  In the above embodiment, in the Co plating step S304, substantially simultaneously with the discharge of the plating solution 35 from the discharge port 46 of the first discharge nozzle 45, the heated heating gas G (for example, water vapor) is applied to the back surface of the substrate W. The aspect which starts sending out toward was demonstrated. However, the present invention is not limited to this. In the Co plating step S304, before the plating solution 35 is discharged from the discharge port 46 of the first discharge nozzle 45, the heating gas G (for example, water vapor) is applied to the back surface of the substrate W. You may start sending out.

  In this case, the additional gas supply unit 187 (FIG. 4) may supply an inert gas (for example, nitrogen) to the heating gas G in the gas supply path 193. In this manner, the inert gas (for example, nitrogen) is mixed with the heating gas G and sent toward the substrate W, whereby the substrate W before the plating solution 35 is supplied is oxidized by the heating gas G. This can be prevented.

Further, in the above embodiment, as shown by a one-dot chain line in FIGS. 2A to 2D, the heating that is located closer to the center of the substrate W than the lower delivery port 191 and delivered from the lower delivery port 191. A lower suction port 194 for sucking the working gas G may be formed in the back plate 171. By providing such a lower suction port 194, such that the code G 'is indicated by arrows labeled in FIG. 2A, the heating gas G after heating the peripheral area A ₂ of the substrate W, The liquid flows along the substrate W toward the center of the substrate W and is discharged from the lower suction port 194. In this case, the temperature of the heating gas G reaching the central region of the substrate W is lower than the temperature when it is sent out toward the peripheral region A ₂ of the substrate W. Thus, by providing the lower suction port 194, stably generate a temperature distribution that is higher than the temperature of the atmosphere around the temperature of the atmosphere around the peripheral area A ₂ of the substrate W in the central region A ₁ of the substrate W be able to.

  The heating gas G sucked by the lower suction port 194 is recovered, for example, via a gas suction path 195 that vertically penetrates the shaft 172. The recovered heating gas G may be discharged to the outside, or may be returned to the gas supply mechanism 170 for reuse.

In the above-described embodiment, the mode in which the heating gas G is sent out toward the back surface of the substrate W has been described. However, the present invention is not limited to this, and the heating gas G is further sent out toward the surface of the substrate W. Also good. For example, as shown in FIG. 6, a gas nozzle 196 is provided on the front surface side of the substrate W and on the side of the first discharge nozzle 45, and the heating gas G is sent not only to the back surface of the substrate W but also to the front surface of the substrate W. May be. In this case, the gas nozzle 196 is connected to the gas supply mechanism 170, and the control mechanism 160 controls the gas supply mechanism 170 so that the gas nozzle 196 sends out the high-temperature heating gas G toward the surface of the substrate W. It has become. The gas nozzle 196, as in the case of the lower outlet 191 provided in the back plate 171, the peripheral region of the substrate W than the amount of the heating gas G blown per unit area in the central region A ₁ of the substrate W The amount of the heating gas G sprayed per unit area in A ₂ is configured to be larger. Thereby, the temperature of the atmosphere around the peripheral region A ₂ of the substrate W can be made higher than the temperature of the atmosphere around the central region A ₁ of the substrate W on the front surface side of the substrate W. As a result, it is possible to suppress the temperature of the plating solution 35 on the substrate W from becoming lower toward the peripheral side of the substrate W, and thereby the temperature distribution of the plating solution 35 on the substrate W is positioned. Regardless, it can be made substantially uniform. Accordingly, the growth of the plating layer can be made uniform in the plane of the substrate W.

  Alternatively, as shown in FIG. 7, by using the gas nozzle 196, the heating gas G is sent out only from the front surface side of the substrate W toward the surface of the substrate W, and the heating gas G is not sent out to the back surface of the substrate W. May be. Even in this case, the temperature of the plating solution 35 on the surface of the substrate W can be controlled, and the growth of the plating layer can be made uniform in the plane of the substrate W.

Further, as shown in FIG. 8A, a top plate 151 may be disposed above the substrate W so as to be separated from the substrate W. In this case, the top plate 151 is disposed on the cup 105 so as to cover the opening 105 a of the cup 105, and covers almost the entire surface of the substrate W. Further, the top plate 151 corresponds to the upper delivery port 197 that sends the heating gas G toward the surface of the substrate W, and the ejection port 46 of the first ejection nozzle 45 and the ejection port 71 of the second ejection nozzle 70. An opening 152 formed at the position is provided. Here, the upper outlet 197, the amount of the heating gas G blown per unit area in the peripheral area A ₂ of the substrate W than the amount of the heating gas G blown per unit area in the central region of the substrate W It is formed on the top plate 151 so as to be larger. Thus, the atmosphere corresponding to the peripheral area A ₂ of the surface of the substrate W, can be intensively heated in comparison with an atmosphere corresponding to the center region of the surface of the substrate W.

Never specific configuration of the upper outlet 197 is particularly limited, provided that "compared to the central region A ₁ towards the peripheral area A _2, the larger amount of the heating gas G blown per unit area" As long as is satisfied, various shapes can be adopted. Hereinafter, an example of the upper delivery port 197 formed in the top plate 151 will be described with reference to FIGS. 8B to 8D. 8B to 8D are each a plan view showing an example of a top plate 151 in which an upper delivery port 197 is formed. 8B to 8D, the substrate W is indicated by a dotted line in order to show the correspondence with the substrate W arranged above the top plate 151.

For example, as shown in FIG. 8B, a plurality of circular upper delivery ports 197 may be formed on the top plate 151 in a line along the radial direction of the substrate W. Further, as shown in FIG. 8C, a large number of circular upper delivery ports 197 arranged on concentric circles of the substrate W may be formed in the top plate 151. Alternatively, as shown in FIG. 8D, a slit-like upper delivery port 197 extending along the circumferential direction of the substrate W may be formed in the top plate 151. A heating gas G is supplied from each gas supply mechanism 170 to each upper delivery port 197 via a gas supply path 198. In addition, when the temperature and pressure of the heating gas G sent out from each 197 are equal, the above-mentioned condition is “the upper delivery port 197 formed in the region corresponding to the peripheral region A ₂ of the substrate W in the top plate 151. towards area, than the area of the upper outlet 197 formed in a region corresponding to the central region a ₁ of the substrate W, is equal to the condition that increases going on "when compared per unit area of the substrate W .

In FIG. 8B-8D, in the top plate 151, upper delivery port 197 in a region corresponding to the central region A ₁ of the substrate W not only a region corresponding to the peripheral area A ₂ of the substrate W is formed Example showed that. However, it is not limited thereto, the upper delivery port 197 may be formed only in a region corresponding to the peripheral area A ₂ of the substrate W of the top plate 151.

  Further, the top plate 151 is connected to the elevating mechanism 154 and can be moved up and down together with the cup 105 by being controlled by the control mechanism 160. Further, the top plate 151 can be moved up and down independently of the cup 105 by the lifting mechanism 154. Thereby, the substrate W can be carried into and out of the substrate holding mechanism 110 in the above-described substrate holding step S300.

  As described above, by providing the top plate 151 that covers substantially the entire region on the surface side of the substrate W above the substrate W, the substrate W is sent out from the lower outlet 191 of the back plate 171 and the upper outlet 197 of the top plate 151. A gas G (for example, water vapor) generated from the heating gas G or the plating solution 35 exists in a space between the substrate W and the top plate 151. As a result, the substrate W and the plating solution 35 can be heated more efficiently, and the growth of the plating layer can be made more uniform in the plane of the substrate W.

8A to 8D, as indicated by the alternate long and short dash line, as in the case of the embodiment shown in FIGS. 2A to 2D, the upper delivery port 197 is located closer to the center of the substrate W than the upper delivery port 197. An upper suction port 199 that sucks the heating gas G sent from the top plate 151 may be formed in the top plate 151. By providing such an upper suction port 199, the heating gas G after heating the peripheral region A ₂ of the substrate W as shown by the arrow labeled G ′ in FIG. It flows toward the center side of the substrate W along W and is discharged from the upper suction port 199. In this case, the temperature of the heating gas G reaching the central region A ₁ of the substrate W is lower than the temperature when fed toward the peripheral area A ₂ of the substrate W. Thus, by providing the upper suction port 199, the temperature around the atmosphere of the peripheral area A ₂ of the substrate W generates a stable temperature distribution that is higher than the temperature of the atmosphere around the central area A ₁ of the substrate W Can do.

  In the form shown in FIG. 8A, the heating gas G may be further sent out from the lower outlet 191 of the back plate 171 toward the back surface of the substrate W, as in the case shown in FIG.

  Further, in FIGS. 6 to 8D, the plating solution 35 is added to the heating gas G delivered from the gas nozzle 196 or the upper delivery port 197 by using the additional gas supply unit 187 (FIG. 4) as in the above embodiment. A component (for example, ammonia) and / or an inert gas (for example, nitrogen) may be mixed.

  Furthermore, in the form shown in FIGS. 6 to 8D, the timing at which the heating gas G is sent from the gas nozzle 196 or the upper delivery port 197 to the surface side of the substrate W in the Co plating step S304 is not necessarily the ejection of the first ejection nozzle 45. The timing at which the plating solution 35 is discharged from the outlet 46 is not necessarily substantially the same as the timing. If it is sufficient to compensate for the temperature drop of the plating solution 35 on the surface of the substrate W, the heating gas G is supplied to the gas nozzle 196 after the plating solution 35 is discharged from the discharge port 46 of the first discharge nozzle 45. Alternatively, it may be sent out from the upper delivery port 197 toward the surface of the substrate W.

  6 to 8D, the same parts as those in the embodiment shown in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof is omitted.

Further, in each of the above-described embodiments, the example in which the heating gas G is sprayed from the gas delivery mechanism 190 toward the substrate W along the vertical direction is shown, but the present invention is not limited to this. For example, the gas delivery mechanism 190 may send the heating gas G toward the substrate W from the peripheral side to the center side of the substrate W along the horizontal direction. Again, the temperature of the atmosphere corresponding to the peripheral area A ₂ of the substrate W can be intensively increased, thereby, easily and efficiently, regardless of the temperature distribution of the plating liquid on the substrate W in position It can be made substantially uniform.

  Further, in each of the above embodiments, an example in which the heating gas G heated to a predetermined temperature is sent toward the substrate W has been shown, but the present invention is not limited to this. For example, the temperature of the heating gas G may be changed to an arbitrary temperature during the plating process. In this case, the temperature may be changed every specified time during the plating process, or the temperature of the heating gas G may be changed according to the number of rotations of the substrate W. As an example, the temperature of the plating process in the process of forming the initial plating layer thinly on the substrate W, the temperature of the plating process in the process of stacking the additional plating layer on the initial plating layer, It is conceivable that the temperature of the heating gas G is changed to an arbitrary temperature so that each becomes an optimum temperature. Regarding the change in the temperature of the heating gas G, for example, a new heating means (not shown) may be provided in the gas delivery mechanism 190 to change the temperature, or the heating gas G heated to a predetermined temperature. The temperature of the heating gas G may be changed by increasing or decreasing the distance between the gas delivery mechanism 190 and the substrate W (e.g., the distance between the gas nozzle 196 and the substrate) when delivering the gas toward the substrate W. . As a result, the temperature of the plating solution 35 on the substrate W can be controlled more finely. For this reason, the reaction of the plating solution 35 can be allowed to proceed under more appropriate conditions. It can be made substantially uniform in the plane of the substrate W.

  Furthermore, in the above embodiment, the CoP plating solution is used as the chemical reduction type plating solution 35 discharged from the first discharge nozzle 45 toward the substrate W. However, the plating solution 35 used is not limited to the CoP plating solution, and various plating solutions 35 can be used. For example, as the chemical reduction type plating solution 35, various plating solutions 35 such as a CoWB plating solution, a CoWP plating solution, a CoB plating solution, or a NiP plating solution may be used.

Example 1
While rotating the substrate W having a diameter of 300 mm, and the NiP plating solution is heated to about 80 degrees discharged toward the central region A ₁ on the surface of the substrate W. As a result, the substrate W was plated for about 10 minutes. At this time, the top plate 151 was disposed so as to cover the substrate W from above. Further, the heating gas G made of water vapor heated to about 90 degrees was sent out toward the peripheral area A ₂ on the surface of the substrate W using the upper outlet 197 provided in the top plate 151.

  The temperature distribution on the substrate W during the plating process was measured. A result is shown to Fig.9 (a). Moreover, distribution of the thickness of the NiP plating layer obtained after the plating treatment was measured. The result is shown in FIG. 9A and 9B, the horizontal axis indicates the position from the center point of the substrate W. Specifically, on the horizontal axis of FIGS. 9A and 9B, “0” corresponds to the center point of the substrate W, and “± 150” corresponds to the periphery of the substrate W.

(Comparative Example 1)
The plating process for the substrate W was performed in the same manner as in Example 1 except that the heating gas G was not sent toward the substrate W. The measurement result of the temperature distribution on the substrate W and the measurement result of the thickness distribution of the obtained plating layer in this case are shown in FIG. 9A and FIG. 9B together with the result of Example 1. .

As shown in FIG. 9 (a), by feeding the heating gas G toward the peripheral area A ₂ of the surface of the substrate W, the temperature of the substrate W in the temperature and the peripheral area A ₂ of the substrate W in the central region A ₁ It was possible to reduce the difference. As a result, as shown in FIG. 9B, the growth of the plating layer could be made substantially uniform in the plane of the substrate W.

20 Plating Processing Device 21 Discharge Mechanism 110 Substrate Holding Mechanism 190 Gas Delivery Mechanism

Claims (13)

In a plating apparatus that performs plating by supplying a plating solution to a substrate,
A substrate holding mechanism for holding and rotating the substrate;
A discharge mechanism that discharges the plating solution toward the substrate held by the substrate holding mechanism;
A gas delivery mechanism for delivering a high-temperature heating gas composed of a gas having a higher specific heat capacity than air toward the substrate held by the substrate holding mechanism;
The said gas delivery mechanism is comprised so that many said gas for a heating may be sent toward the peripheral area | region of the said board | substrate rather than the center area | region of the said board | substrate.   The plating apparatus according to claim 1, wherein the heating gas is water vapor.   The plating apparatus according to claim 1, wherein the gas delivery mechanism sends out the heating gas from the back side of the substrate. A back plate disposed on the back side of the substrate with a gap from the substrate;
The said gas delivery mechanism sends out the said gas for a heating toward the back surface of the said board | substrate from the lower side delivery port provided in the said backplate, The plating processing apparatus of Claim 3 characterized by the above-mentioned.   The back plate is formed with a lower suction port that is located closer to the center of the substrate than the lower delivery port and sucks the heating gas delivered from the lower delivery port. The plating apparatus according to claim 4.   The plating apparatus according to claim 1, wherein the gas delivery mechanism sends out the heating gas from a surface side of the substrate. A top plate disposed on the surface side of the substrate with a gap from the substrate;
The plating apparatus according to claim 6, wherein the gas delivery mechanism feeds the heating gas from an upper delivery port provided in the top plate toward a surface of the substrate.   The upper suction port for sucking the heating gas sent from the upper delivery port is formed in the top plate, which is located closer to the center of the substrate than the upper delivery port. 7. The plating apparatus according to 7. It is arranged around the substrate holding mechanism, has an opening at the top, and further comprises a liquid discharge mechanism for discharging the plating solution scattered from the substrate,
9. The plating apparatus according to claim 7, wherein the top plate is disposed so as to cover the opening of the liquid discharge mechanism from above when the plating liquid is supplied to the substrate. In a plating method for performing plating by supplying a plating solution to a substrate,
A holding step of holding the substrate by a substrate holding mechanism;
Rotating the substrate;
A plating step of discharging the plating solution from a discharge mechanism toward the substrate,
The plating step includes a gas delivery step of sending a high-temperature heating gas composed of a gas having a higher specific heat capacity than air toward the substrate held by the substrate holding mechanism,
In the gas delivery step, the heating gas is sent out more toward the peripheral region of the substrate than in the central region of the substrate.   The plating method according to claim 10, wherein the heating gas is water vapor.   The plating process according to claim 10 or 11, wherein the heating gas sent out toward the peripheral region of the substrate is sucked by a suction port provided at a position corresponding to a central region of the substrate. Method. In a storage medium storing a computer program for causing a plating apparatus to execute a plating method,
The plating method is:
A holding step of holding the substrate by a substrate holding mechanism;
Rotating the substrate;
A plating step of discharging the plating solution from a discharge mechanism toward the substrate,
The plating step includes a gas delivery step of sending a high-temperature heating gas composed of a gas having a higher specific heat capacity than air toward the substrate held by the substrate holding mechanism,
The storage medium according to claim 1, wherein in the gas delivery step, the heating gas is sent out more toward the peripheral area of the substrate than in the central area of the substrate.

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