JP2013110439A - Light-emitting diode device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting diode device in which the difference of intensity, of the light emitted from a package, due to difference of in-plane azimuth angle of a chip arrangement surface can be reduced.SOLUTION: The light-emitting diode device comprises: a light-emitting diode chip 10 including a luminous layer 12 having a principal surface 12a; and a package 20 having a chip arrangement surface 21a on which the light-emitting diode chip 10 is mounted. The light emitted from the principal surface 12a of the luminous layer 12 has a plurality of different light emission intensities depending on the in-plane azimuth angle of the principal surface 12a of the luminous layer 12. At least one of the light-emitting diode chip 10 and the package 20 has a structure for reducing the difference of intensity, of the light emitted from the package 20, due to difference of the in-plane azimuth angle of a chip arrangement surface 21a. The package 20 is formed to have a structure for reducing the difference of intensity, of the light emitted from the package 20, due to difference of the in-plane azimuth angle of a chip arrangement surface 21a.

Description

  The present invention relates to a light emitting diode device, and more particularly, to a light emitting diode device including a light emitting diode chip.

  Conventionally, in a light emitting diode device provided with a light emitting diode chip, it is known that a large piezoelectric field is generated in a direction perpendicular to the quantum well surface in a GaInN quantum well fabricated on a gallium nitride C-plane (0001) substrate. . Thus, when a piezo electric field is present in a GaInN quantum well, a quantum confined Stark effect in which the energy level shifts to a lower energy side than in the case of no electric field occurs, or electrons and holes are separated. There is a disadvantage that the light emission probability is lowered and the light emission efficiency is lowered.

In order to eliminate this inconvenience, an element structure in which the piezo effect is reduced in gallium nitride is not the C plane (0001) but the A plane {11-20}, the M plane {1-100}, or (2-1-1). 14) Light-emitting diode chips that form quantum wells on the surface and light-emitting diode chips that have the (10-1-3) surface as the main surface have been proposed (for example, see Non-Patent Document 1). In the said nonpatent literature 1, the light emitting diode chip | tip which makes the light emitting layer the InGaN / GaN multiple quantum well (MQW) which makes (10-1-3) plane a main surface is proposed. A light emitting diode chip that forms quantum wells on the A-plane {11-20}, M-plane {1-100} or (2-1-14) plane, or light emission whose principal plane is the (10-1-3) plane In the diode chip, it is possible to reduce the piezo effect by forming the quantum well on a surface other than the C-plane.
Appl. Phys. Lett. 87, 231110 (2005)

However, it has been reported that quantum wells other than the C-plane have anisotropy in which the oscillator strength of the light-emitting layer is large in the in-plane direction of the main surface of the light-emitting layer (quantum well). Specifically, in the GaInN quantum well having the C-plane as the principal surface, the c-axis forms a 6-fold rotational symmetry axis, so the vibrator strengths of <11-20> polarized light and <1-100> polarized light are equal, There is no anisotropy of oscillator strength for linearly polarized light in the quantum well plane. On the other hand, since a GaInN quantum well having a principal surface other than the C-plane has no rotational symmetry, the oscillator strength for linearly polarized light in the quantum well surface is generally anisotropic. That is, the oscillator strength for linearly polarized light has a plurality of different magnitudes depending on the direction of linearly polarized light in the quantum well plane. For this reason, in the quantum wells other than the C plane, when light emitted from the quantum well is observed in the normal direction of the well layer, the light is linearly polarized. For example, a 4 nm well layer made of Ga _0.6 In _0.4 N with a (1-10-3) plane as a main surface and a GaN barrier layer formed on the (1-100) plane of sapphire is laminated. In the light emitting diode chip having the MQW as the light emitting layer, the light emitted from the light emitting layer is strongly polarized in the [11-20] direction.

  Theoretically, the light emitted from such a light emitting diode chip whose principal surface is a quantum well other than the C-plane has a distribution in which the emission intensity increases in a direction perpendicular to the direction in which the vibrator intensity is large. is expected. For example, in the conventional light emitting diode chip, the light emitted from the light emitting diode chip is strongly polarized in the [11-20] direction, the light emitted in the [11-20] direction is weak, and is perpendicular to the [11-20] direction. Light emitted in any direction is expected to be strong. When the light emitted from the light emitting layer has anisotropy with a large light emission intensity due to the difference in the azimuth angle in the plane of the main surface of the light emitting layer, the light emitting diode device including the light emitting diode chip is used. The emitted light is also considered to have anisotropy with a large emission intensity. Specifically, the light-emitting diode device includes a light-emitting diode chip and a package having a chip arrangement surface that is parallel to the main surface (light emitting surface) of the light-emitting diode chip and on which the light-emitting diode chip is arranged. In this case, the light emitted from the light emitting diode device usually has anisotropy with a large emission intensity with respect to the azimuth angle in the plane of the chip placement surface of the package. For this reason, there is a problem that it is difficult to reduce the difference in emission intensity due to the difference in the azimuth angle in the plane of the chip arrangement surface of the light emitted from the package. In this case, there is an inconvenience that the light emitting diode device cannot be used for, for example, an illumination or a display lamp, which requires uniformity of light emission intensity with respect to an azimuth angle in the plane of the chip placement surface of the package.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to provide a difference in intensity due to a difference in azimuth angle in the plane of a chip placement surface of light emitted from a package. It is an object of the present invention to provide a light emitting diode device capable of reducing the above.

Means for Solving the Problems and Effects of the Invention

  A light-emitting diode device according to an aspect of the present invention includes a light-emitting diode chip including a light-emitting layer having a main surface, and a package having a chip arrangement surface on which the light-emitting diode chip is disposed, and is emitted from the main surface of the light-emitting layer. The light having a plurality of different emission intensities depending on the azimuth angle in the plane of the main surface of the light emitting layer, and at least one of the light emitting diode chip and the package is a surface of the chip arrangement surface of the light emitted from the package It has a structure that reduces the difference in strength due to the difference in azimuth angle.

  In the light emitting diode device according to this aspect, as described above, at least one of the light emitting diode chip and the package reduces the difference in light emission intensity due to the difference in the azimuth angle in the plane of the chip placement surface of the light emitted from the package. By providing the structure, the light emitted from the main surface of the light emitting layer is emitted from the package even when the light emitting layer has a plurality of different light emission intensities depending on the azimuth angle in the plane of the main surface of the light emitting layer. It is possible to reduce the difference in light emission intensity due to the difference in the azimuth angle in the plane of the optical chip arrangement surface. As a result, the light emitting diode device can be used for, for example, an illumination or a display lamp that requires uniformity of the light emission intensity with respect to the azimuth angle in the plane of the chip placement surface of the package.

  In the light emitting diode device according to the above aspect, the package is preferably formed in a structure that reduces a difference in intensity due to a difference in azimuth angle in a plane of a chip arrangement surface of light emitted from the package. If comprised in this way, the difference of the emitted light intensity of the light radiate | emitted from a package can be easily reduced with the structure of a package.

  In the light-emitting diode device according to the above aspect, the light-emitting diode chip has a light emission surface, and the light emission surface has an anisotropic structure with respect to the in-plane direction of the light emission surface, thereby emitting from the light emission surface. The difference in intensity due to the difference in the azimuth angle in the plane of the chip arrangement surface of the light to be generated is reduced. With this configuration, the light emitting surface of the light emitting diode chip has an anisotropic structure with respect to the in-plane direction of the light emitting surface, thereby easily reducing the difference in light emission intensity of light emitted from the package. can do.

  In this case, preferably, the anisotropic structure of the light emitting surface of the light emitting diode chip has different shapes along the first direction and the second direction intersecting the first direction in the in-plane direction of the light emitting surface. It is the structure which has. If comprised in this way, even when it has several different light emission intensity depending on the azimuth angle in the surface of the main surface of a light emitting layer, a several light emitting diode chip | tip cross | intersects a 1st direction and a 1st direction. By arranging along the two directions, the difference in the emission intensity of the light emitted from the package can be reduced by the anisotropic structure of the light emitting surface of the light emitting diode chip.

  In the light emitting diode device according to the above aspect, the light emitting diode chip preferably includes a first light emitting diode chip and a second light emitting diode chip, and the light emission intensity in the in-plane direction of the main surface of the light emitting layer of the first light emitting diode chip. The direction of the large azimuth angle and the direction of the azimuth angle of large emission intensity in the in-plane direction of the main surface of the light emitting layer of the second light emitting diode chip are oriented in different directions within the plane of the chip placement surface. By arranging the first light emitting diode chip and the second light emitting diode chip, the difference in intensity due to the difference in the azimuth angle in the plane of the chip arrangement surface of the light emitted from the package is reduced. . If comprised in this way, the difference in the intensity | strength by the difference in the azimuth angle in the surface of the chip | tip arrangement | positioning surface of the light radiate | emitted from a package can be reduced easily.

  In the light-emitting diode device according to the above aspect, the light-emitting layer is preferably made of any one of a wurtzite semiconductor and α-SiC. If comprised in this way, the emitted light intensity of the light radiate | emitted from a light emitting layer can have the anisotropy regarding the azimuth angle in the surface of the main surface of a light emitting layer.

  In the light emitting diode device according to the above aspect, the main surface of the light emitting layer preferably includes a surface other than the (0001) surface. If comprised in this way, the emitted light intensity of the light radiate | emitted from a light emitting layer can have the anisotropy regarding the azimuth angle in the surface of the main surface of a light emitting layer.

  In this case, preferably, the main surface of the light emitting layer is substantially (H, K, -HK, 0) plane (H and K are integers, and at least one of H and K is not 0). Including. If comprised in this way, the anisotropy of the emitted light intensity regarding the azimuth | direction angle in the surface of a main surface can be strengthened.

  In the light emitting diode device according to the above aspect, the oscillator strength of the light emitting layer with respect to linearly polarized light in the in-plane direction of the main surface of the light emitting layer is preferably plural depending on the azimuth angle in the surface of the main surface of the light emitting layer. Have different sizes. Here, the vibrator strength of the light emitting layer is the vibrator strength with respect to the transition between the bottom of the conduction band and the top of the valence band of the light emitting layer. If comprised in this way, the light emitting layer can have the anisotropy of the light emission intensity regarding the azimuth angle in the surface of the main surface of a light emitting layer.

  In the light-emitting diode device according to the above aspect, the appearance of the light-emitting diode chip is preferably such that the direction with the highest emission intensity and the direction with the lowest emission intensity with respect to the azimuth angle in the plane of the light-emitting diode chip can be distinguished. Is formed. If comprised in this way, when arrange | positioning a light emitting diode chip | tip on a chip | tip arrangement | positioning surface, it becomes easy to recognize the direction with the largest light emission intensity | strength of a light emitting diode chip.

  In this case, preferably, the outer shape of the upper surface of the light-emitting diode chip is formed in a substantially rectangular shape, and the long side or the short side of the substantially rectangular shape is substantially the same as the direction in which the emission intensity is highest with respect to the in-plane azimuth angle. Is consistent. With this configuration, when the light emitting diode chip is disposed on the chip placement surface, the direction in which the light emission intensity of the light emitting diode chip is the largest is recognized by the substantially rectangular long side or short side of the light emitting diode chip. It becomes easy.

  FIG. 1 is a cross-sectional view for explaining a light-emitting diode chip used in the present invention. Referring to FIG. 1, before describing a specific embodiment of the present invention, a schematic configuration of a light-emitting diode chip used in the present invention will be described.

  In the light emitting diode chip used in the present invention, a light emitting layer 2 is formed on a first semiconductor 1 as shown in FIG. A second semiconductor 3 is formed on the light emitting layer 2. A first electrode 4 is formed on the lower surface of the first semiconductor 1, and a second electrode 5 is formed on the second semiconductor 3.

  Here, in the light emitting diode chip used in the present invention, light emission is performed so that the light emission intensity of the light emitted from the light emitting layer 2 has anisotropy with respect to the azimuth angle in the plane of the main surface (upper surface) 2 a of the light emitting layer 2. The material of the diode chip and the direction of the main surface are selected. For example, in the case of a wurtzite structure semiconductor, 4H—SiC, or 6H—SiC, the main surface is selected so that the main surface is other than the (0001) plane. In this case, in particular, when (H, K, -HK, 0) planes such as the (11-20) plane and the (1-100) plane are used as the main plane, light emission related to the azimuth angle in the plane of the main plane. Strength anisotropy is strongest.

  In addition, for example, {11-24} plane, {11-22} plane, {1-101} plane, {1-102} plane, {1-103} plane, and within a predetermined angle range from these planes (H, K, -HK, L) planes (L is not 0) such as planes that are turned off at the main surface, or off from these planes within a predetermined angle range. The surface may be the main surface. Specific materials include nitride semiconductors such as wurtzite structure AlGaN, GaN and GaInN, hexagonal crystals such as 2H—SiC, 4H—SiC and 6H—SiC, rhombohedral structure α-SiC, A wurtzite MgZnO, ZnCdO, ZnS or the like is used. When using a zincblende structure semiconductor, it is necessary to use a surface other than the {001} plane and the {111} plane (for example, the {110} plane) as the main surface and the light emitting layer to have a quantum well structure. is there.

  Here, in general, a double heterostructure is formed by forming a light emitting layer 2 having a band gap smaller than that of the first semiconductor 1 and the second semiconductor 3, thereby confining carriers in the light emitting layer 2. It is possible to improve the light emission efficiency. Further, by making the light emitting layer 2 have a single quantum well structure or MQW structure, the light emission efficiency can be further improved. In the case of this quantum well structure, since the film thickness of the well layer is small, it is possible to suppress the deterioration of the crystallinity of the well layer even when the well layer has strain. In addition, even if the well layer has a compressive strain in the in-plane direction of the main surface 2a of the light emitting layer 2 or a tensile strain in the in-plane direction, the deterioration of crystallinity is suppressed. Is done. The light emitting layer 2 may be undoped or doped.

  In the present invention, the first semiconductor 1 may be composed of a substrate or a semiconductor layer, or may be composed of both a substrate and a semiconductor layer. Moreover, when the 1st semiconductor 1 is comprised by both a board | substrate and a semiconductor layer, a board | substrate is formed in the opposite side (lower side) from the side in which the 2nd semiconductor 3 of the 1st semiconductor 1 is formed. The substrate may be a growth substrate, or a support substrate that is bonded to the growth surface of the semiconductor layer after the semiconductor layer is grown to support the semiconductor layer.

  In the pn junction type light emitting diode chip, the first semiconductor 1 and the second semiconductor 3 have different conductivity. The first semiconductor 1 may be p-type and the second semiconductor 3 may be n-type, or the first semiconductor 1 may be n-type and the second semiconductor 3 may be p-type.

  The first semiconductor 1 and the second semiconductor 3 may include a cladding layer (not shown) having a band gap larger than that of the light emitting layer 2. The first semiconductor 1 and the second semiconductor 3 may include a cladding layer and a contact layer (not shown) from the light emitting layer 2 side. In this case, the contact layer preferably has a smaller band gap than the cladding layer.

When using a wurtzite nitride-based semiconductor, the substrate may be a nitride-based semiconductor substrate made of AlN, GaN, AlGaN and GaInN, or a nitride-based material such as sapphire, spinel, Si, GaAs, GaP and ZrB _2. Substrates other than semiconductors can be used. As the light emitting layer of the quantum well, GaInN can be used as the well layer, and AlGaN, GaN, and GaInN having a larger band gap than the well layer can be used as the barrier layer. As the cladding layer and the contact layer, GaN and AlGaN can be used.

  Further, the second electrode 5 may be formed on a part of the second semiconductor 3. Moreover, it is preferable that the electrode (in this case, the second electrode 5) formed on the light emission side (upper side) of the light emitting diode chip has translucency.

  Further, as will be described later, the main surface 2a of the light emitting layer 2 is arranged in parallel to the chip arrangement surface of the package (not shown).

  Next, taking as an example a light-emitting diode having a quantum well light-emitting layer with GaInN as a well layer and having a (H, K, -H-K, 0) plane as a main surface, the in-plane of the main surface of the light-emitting diode The anisotropy of the emission intensity with respect to the azimuth angle will be described. FIG. 2 is a diagram showing the relationship between the direction defined by the polar angle θ and the azimuth angle φ, the light emitting layer whose main surface is the (11-20) plane, and the crystal orientation in the plane of the light emitting layer. . FIG. 3 shows a direction inclined by a finite (not 0) angle θ with respect to the [11-20] direction from a quantum well light-emitting layer having a well layer of GaInN having a (11-20) plane as a main surface. It is the figure which showed the relationship between the azimuth angle (phi) of emitted light, and emitted light intensity. Here, φ = 0 °, 90 °, 180 °, and 270 ° respectively correspond to the [0001] direction, [1-100] direction, [000-1] direction, and [−1100] direction of the light emitting layer. As shown in FIG. 3, the light emitted in the direction inclined by the finite polar angle θ has anisotropy in emission intensity with respect to the azimuth angle in the plane of the main surface 2a of the light emitting layer 2, and the azimuth angle is φ The emission intensity is high in the direction of 0 ° or 180 °, and the emission intensity is low in the direction of the azimuth angle φ = 90 ° or 270 °. Although the light emitting diode having the (11-20) plane as the main surface has been described with reference to FIG. 3, the light emitting layer of the quantum well having GaInN as the well layer and having the (H, K, -HK, 0) plane as the main surface. In a light emitting diode having an azimuth angle, there is a direction in which the azimuth angle is in the [0001] direction, and there is a direction in which the luminescence angle is strong. There is a direction, and the direction in which the emission intensity is high differs from the direction in which the emission intensity is low by 90 degrees in azimuth. In addition, the light emission intensity exhibits two-fold rotational symmetry in the plane of the main surface of the light emitting layer 2.

(First embodiment)
FIG. 4 is a plan view showing the structure of the light emitting diode device according to the first embodiment of the present invention. FIG. 5 is a cross-sectional view showing the structure of the light emitting diode device according to the first embodiment shown in FIG. FIG. 6 is a plan view showing the structure of the support member of the light emitting diode device according to the first embodiment shown in FIG. First, the structure of the light emitting diode device according to the first embodiment will be described with reference to FIGS.

  As shown in FIGS. 4 and 5, the light emitting diode device according to the first embodiment includes four light emitting diode chips 10 and a package 20 in which the four light emitting diode chips 10 are arranged.

  The light emitting diode chip 10 is made of a nitride semiconductor having a wurtzite structure having a (11-20) plane as a main surface. As shown in FIG. 4, the outer shape of the light-emitting diode chip 10 is a square shape, a rectangular shape, a rhombus shape, a parallelogram shape, or the like when viewed from the upper surface side.

In the light-emitting diode chip 10, as shown in FIG. 5, a well layer having a thickness of about 2 nm made of Ga _0.7 In _0.3 N is formed on an n-type GaN substrate 11 having a thickness of about 100 μm (FIG. 5). A light emitting layer 12 made of MQW is formed by laminating a barrier layer (not shown) made of Ga _0.9 In _0.1 N. A p-type GaN layer 13 is formed on the light emitting layer 12. An n-side electrode 14 is formed on the lower surface of the n-type GaN substrate 11, and a light-transmitting p-side electrode 15 is formed on the p-type GaN layer 13.

  Here, in 1st Embodiment, the vibrator | oscillator intensity | strength of the light emitting layer 12 of each light emitting diode chip | tip 10 becomes larger with respect to the [1-100] polarized light than the [0001] polarized light. Accordingly, the intensity of light emitted from the light emitting layer 12 is higher for light having an azimuth angle close to parallel to the [0001] direction than for light having an azimuth angle parallel to the [1-100] direction.

  In the first embodiment, the four light emitting diode chips 10 are arranged on the chip placement surface 21a such that the main surface 12a of the light emitting layer 12 is parallel to the chip placement surface 21a of the support member 21 described later of the package 20. Is placed on top.

  In the first embodiment, as shown in FIG. 4, two of the four light emitting diode chips 10, one light emitting diode chip 10 a and two other light emitting diode chips 10 b, are one light emitting diode chip. The [0001] direction of 10a and the [1-100] direction of the other light emitting diode chip 10b are arranged so as to be substantially parallel. Therefore, there is an azimuth angle direction in which the light emission intensity is large in the in-plane direction of the light emitting layer 12 of one light emitting diode chip 10a and a direction in which the light emission intensity is large in the in-plane direction of the light emitting layer 12 of the other light emitting diode chip 10b. Since one light-emitting diode chip 10a and the other light-emitting diode chip 10b are arranged so as to be in different directions (crossing (orthogonal) directions) in the plane of the package 20, the light emitted from the package 20 The difference in strength (strength anisotropy) due to the difference in the azimuth angle in the surface of the chip placement surface 21a of the support member 21 is reduced. The light emitting diode chip 10a is an example of the “first light emitting diode chip” in the present invention, and the light emitting diode chip 10b is an example of the “second light emitting diode chip” in the present invention.

  Further, as shown in FIG. 5, the package 20 includes the above-described support member 21 and a translucent resin mold 22. The support member 21 is made of an insulating material such as resin or ceramic. In addition, the support member 21 is disposed on the outer periphery of the chip placement surface 21a described above, which is a flat surface on which the light emitting diode chip 10 is placed, and the reflective side surface is inclined with respect to the chip placement surface 21a. A recess having 21b is formed.

  As shown in FIGS. 5 and 6, on the chip arrangement surface 21a, one electrode 21c made of copper or the like arranged in the vicinity of the center portion of the chip arrangement surface 21a and the vicinity of the peripheral portion of the chip arrangement surface 21a are arranged. The other electrode 21d made of copper or the like is formed. On the one electrode 21c, the n-side electrode 14 (see FIG. 5) of the light-emitting diode chip 10 is joined. A wire 23 (see FIG. 5) connected to the p-side electrode 15 (see FIG. 5) of the light-emitting diode chip 10 is connected to the other electrode 21d. One lead electrode 21e is connected to one electrode 21c, and the other lead electrode 21f is connected to the other electrode 21d. The one lead electrode 21e and the other lead electrode 21f are arranged so as to connect the inside and the outside of the support member 21. In this way, the four light emitting diode chips 10 are wired so as to always light up simultaneously.

  A reflective material 21g made of Al or Ag is formed on the reflective side surface 21b. Further, as shown in FIG. 6, the reflection side surface 21 b is formed in a circular shape when viewed from the light emission direction (upward direction).

  FIG. 7 is a plan view showing the structure of a light emitting diode device according to a modification of the first embodiment of the present invention. As shown in FIG. 7, the light emitting diode device according to the modification of the first embodiment of the present invention differs from the first embodiment in that the outer shapes of the upper surfaces of the light emitting diode chips 10c and 10d are substantially parallel to the [0001] direction. It is formed in a rectangle having a long side. In this modification, the main surfaces of the light-emitting diode chips 10c and 10d are formed in a two-fold rotationally symmetrical rectangular shape in which the direction of the long side or the short side coincides with the direction with the highest light emission intensity. It is possible to distinguish between the direction with the highest emission intensity related to the in-plane azimuth angle of the main surfaces of the chips 10c and 10d and the direction with the lowest emission intensity. Therefore, when the light emitting diode chips 10c and 10d are arranged on the chip arrangement surface 21a, it becomes easy to recognize the direction in which the light emission intensity of the light emitting diode chips 10c and 10d is the largest. Here, the method of distinguishing the direction with the highest emission intensity with respect to the azimuth angle in the plane of the main surface from the direction with the lowest emission intensity is not limited to forming the chip in a rectangular shape, but the light emitting diode chips 10c and 10d. The light emitting diode chips 10c and 10d need only be formed so that the direction with the highest emission intensity with respect to the azimuth angle in the plane of the main surface can be distinguished from the direction with the lowest emission intensity. For example, a mark capable of recognizing the direction with the highest light emission intensity may be formed on the surface of the light-emitting diode chips 10c and 10d. When electrodes are formed on the light-emitting diode chips 10c and 10d, the shape of the electrodes Alternatively, the direction in which the light emission intensity is the highest may be made recognizable by arrangement. Alternatively, the electrodes may be formed in a two-fold rotationally symmetrical rectangular shape in which the direction of the long side or the short side coincides with the direction with the highest light emission intensity. Further, the outer shapes of the light emitting diode chips 10c and 10d may be formed so that the direction with the highest light emission intensity can be recognized.

(Second Embodiment)
FIG. 8 is a plan view illustrating a structure of a light emitting diode device according to a second embodiment of the present invention. FIG. 9 is a sectional view showing the structure of the light emitting diode device according to the second embodiment shown in FIG. Referring to FIGS. 8 and 9, in the second embodiment, unlike the first embodiment, the reflection side surface of the package is caused by the difference in the azimuth angle in the plane of the chip arrangement surface of the light emitted from the package. A case where a shape that reduces the difference in strength is formed will be described.

  As shown in FIGS. 8 and 9, the light emitting diode device according to the second embodiment includes one light emitting diode chip 30 and a package 40 in which one light emitting diode chip 30 is disposed.

  The light emitting diode chip 30 is made of a nitride semiconductor having a wurtzite structure having a (1-100) plane as a main surface. As shown in FIG. 8, the light emitting diode chip 30 is formed in a square shape having a size of about 300 μm × about 300 μm when viewed from the upper surface side.

In the light emitting diode chip 30, as shown in FIG. 9, a well layer (not shown) made of Ga _0.7 In _0.3 N and having a thickness of about 2 nm is formed on the n-type GaN layer 31, and Ga _A light emitting layer 32 made of MQW is formed by laminating a barrier layer (not shown) made of _0.9 In _0.1 N. A p-type GaN layer 33 is formed on the light emitting layer 32. Further, as in the first embodiment, an n-side electrode 14 is formed on the lower surface of the n-type GaN layer 31, and a light-transmitting p-side electrode 15 is formed on the p-type GaN layer 33. Is formed.

  Here, in the second embodiment, as in the first embodiment, the light emission intensity of the light emitted from the light emitting layer 32 is anisotropic with respect to the azimuth angle in the plane of the main surface (upper surface) 32 a of the light emitting layer 32. Have That is, the light emission intensity of the light emitted from the light emitting layer 32 is higher in the direction of the azimuth angle parallel to the [0001] direction than in the direction of the azimuth angle parallel to the [11-20] direction. growing.

  As shown in FIG. 8, the package 40 includes a support member 41 and a translucent resin mold 42. The support member 41 includes a chip arrangement surface 41a that is a flat surface on which the light emitting diode chip 30 is arranged, and a reflection side surface 41b that is arranged on the outer periphery of the chip arrangement surface 41a and is inclined with respect to the chip arrangement surface 41a. The recessed part which has is formed. The reflection side surface 41b is an example of the “reflection surface” in the present invention.

  Further, as shown in FIG. 9, on the chip placement surface 41a, one electrode 41c made of copper or the like placed near the center of the chip placement surface 41a and copper placed near the periphery of the chip placement surface 41a. The other electrode 41d is formed. One lead electrode 41e is connected to one electrode 41c, and the other lead electrode 41f is connected to the other electrode 41d.

  In the second embodiment, a reflective material 41g made of Al, Ag, or the like is formed on the reflective side surface 41b. The reflection side surface 41 b is formed by forming an uneven shape on the surface of the recess of the support member 41 and forming a reflective material 41 g on the surface of the recess of the support member 41. As shown in FIG. 8, the reflective side surface 41b is formed with a reflective material 41g having a concavo-convex shape reflecting the concavo-convex shape of the surface of the concave portion of the support member 41 when viewed from the light emitting direction (upward direction). Yes. Specifically, as shown in FIG. 9, the reflective side surface 41b has an inner diameter L1 of about 1 mm in the vicinity of the chip placement surface 41a. Further, as shown in FIG. 8, the interval W1 between the convex and concave portions formed on the reflective side surface 41b is about 20 μm, and the depth D1 of the concave portion is about 20 μm. The angle θ1 of the vertex is about 50 degrees. Thereby, the light emitted from the light emitting diode chip 30 is scattered by the reflection side surface 41b. Note that the size of the concave and convex portions of the concavo-convex shape may be approximately the same as the emission wavelength, or may be larger than the emission wavelength. For example, the interval W1 between the convex portions is preferably about 250 nm or more.

  The remaining structure of the second embodiment is the same as that of the first embodiment.

  In the second embodiment, as described above, the light emitted from the light-emitting diode chip 30 is reflected by the reflective side surface 41b by forming an uneven shape on the reflective side surface 41b as viewed from the light emission direction (upward direction). Even if the light emitted from the main surface 32a of the light emitting layer 32 has a plurality of different light emission intensities depending on the azimuth angle in the plane of the main surface 32a of the light emitting layer 32, the package can be scattered. The difference in emission intensity due to the difference in azimuth angle in the surface of the chip placement surface 41a of the support member 41 of the light emitted from 40 can be reduced.

  The remaining effects of the second embodiment are similar to those of the aforementioned first embodiment.

(Third embodiment)
FIG. 10 is a plan view illustrating a structure of a light emitting diode device according to a third embodiment of the present invention. FIG. 11 is a cross-sectional view illustrating the structure of the light emitting diode device according to the third embodiment illustrated in FIG. Referring to FIGS. 10 and 11, in the third embodiment, unlike the first embodiment, light emitted from the package (light emitting diode chip) is emitted on the light emitting surface (upper surface) of the light emitting diode chip. The case where the uneven | corrugated shape extended in a predetermined direction is formed so that the difference in intensity | strength may be reduced is demonstrated.

  As shown in FIGS. 10 and 11, the light emitting diode device according to the third embodiment includes one light emitting diode chip 50 and a package 60 in which one light emitting diode chip 50 is disposed.

The light emitting diode chip 50 is made of a nitride semiconductor having a wurtzite structure having a (11-24) plane as a main surface. In the light emitting diode chip 50, as shown in FIG. 11, a well layer (not shown) made of Ga _0.7 In _0.3 N and having a thickness of about 2 nm is formed on the n-type GaN layer 51, and Ga _A light emitting layer 52 made of MQW is formed by laminating a barrier layer (not shown) made of _0.9 In _0.1 N. A p-type GaN layer 53 is formed on the light emitting layer 52. The p-type GaN layer 53 is an example of the “semiconductor layer” in the present invention. Similarly to the first embodiment, the n-side electrode 14 is formed on the lower surface of the n-type GaN layer 51, and the light-transmitting p-side electrode 55 is formed on the p-type GaN layer 53. Is formed. The p-side electrode 55 is an example of the “electrode” in the present invention.

  Here, in the third embodiment, as in the first embodiment, the emission intensity of the light emitted from the light emitting layer 52 is anisotropic with respect to the azimuth angle in the plane of the main surface (upper surface) 52 a of the light emitting layer 52. Have That is, the light emission intensity of the light emitted from the light emitting layer 52 is more in the y direction (see FIG. 10) perpendicular to the [1-100] direction than the light in the direction of the azimuth angle parallel to the [1-100] direction. Light in the direction of near azimuth is larger. The [1-100] direction and the [-1100] direction are examples of the “first direction” in the present invention, and the y direction is an example of the “second direction” in the present invention.

  In the third embodiment, as shown in FIGS. 10 and 11, the light emitting surface (upper surface) 53 a of the p-type GaN layer 53 disposed on the light emitting surface side of the light emitting diode chip 50 has an uneven shape. Is formed. Specifically, as shown in FIG. 11, the concave and convex portions of the concavo-convex shape on the light emitting surface (upper surface) 53a of the p-type GaN layer 53 have a width W2 of about 0.5 μm and about 0.25 μm. The height H1 is formed. The concave and convex portions of the light emitting surface (upper surface) 53a of the p-type GaN layer 53 are formed to extend in the y direction. As a result, it is possible to increase the amount of light emitted from the light emitting diode chip 50 in the direction of the azimuth angle parallel to the [1-100] direction. The p-side electrode 55 is formed in a concavo-convex shape along the concavo-convex shape of the p-type GaN layer 53. Thereby, when the light emitted from the light emitting layer 52 has a small light emission intensity in the direction of the azimuth angle in the [1-100] direction, the surface of the chip placement surface 61a of the support member 61 of the light emitted from the package 60 The difference in emission intensity due to the difference in azimuth angle can be reduced.

  Further, the size of the concave and convex portions of the concavo-convex shape of the p-type GaN layer 53 may be approximately the same as the emission wavelength, or may be larger than the emission wavelength. When the emission wavelength is about 500 nm, for example, the width W2 of the recess is preferably about 250 nm or more.

  Further, when the size of the concave and convex portions of the concavo-convex shape of the p-type GaN layer 53 is several times the emission wavelength (for example, about 250 nm to about 1200 nm), the light emitting surface ( When the upper surface 53a is flat, there is an effect that light that is not emitted to the outside of the light-emitting diode chip 50 by being totally reflected is emitted to the outside by a diffraction effect.

  Further, when the size of the concave and convex portions of the concavo-convex shape of the p-type GaN layer 53 is larger than the emission wavelength (for example, about 2 μm to about 50 μm), the light emitted from the light emitting layer 52 is emitted. Since it becomes easy to enter the uneven shape of the p-type GaN layer 53 at a critical angle or less, there is an effect of increasing the light emitted to the outside of the light emitting diode chip 50.

In the third embodiment, an uneven shape is formed on the light emitting surface (upper surface) 53a of the p-type GaN layer 53, but a dielectric film such as TiO ₂ is formed on the p-type GaN layer 53 on the emitting surface side. The concave and convex shape may be formed on the dielectric film. Further, the same effect can be obtained by forming a concavo-convex shape on the lower surface of the n-type GaN layer 51 on the opposite side (lower side) to the emission surface, but it is more effective to form the concavo-convex shape on the emission surface side.

  As shown in FIG. 11, the package 60 includes a support member 61 and a translucent resin mold 62 as in the first embodiment. The support member 61 includes a chip arrangement surface 61a that is a flat surface on which the light emitting diode chip 50 is arranged, and a reflection side surface 61b that is arranged on the outer periphery of the chip arrangement surface 61a and is inclined with respect to the chip arrangement surface 61a. The recessed part which has is formed.

  Similarly to the second embodiment, on the chip arrangement surface 61a, one electrode 41c made of copper or the like arranged in the vicinity of the center portion of the chip arrangement surface 61a and the vicinity of the peripheral portion of the chip arrangement surface 61a are arranged. The other electrode 41d made of copper or the like is formed. One lead electrode 41e is connected to one electrode 41c, and the other lead electrode 41f is connected to the other electrode 41d.

  In the third embodiment, a reflective material 61g made of Al, Ag, or the like is formed on the reflective side surface 61b, as in the first embodiment.

  The remaining structure of the third embodiment is similar to that of the aforementioned first embodiment.

  The remaining effects of the third embodiment are similar to those of the aforementioned first embodiment.

  In the third embodiment, the light emitting surface of the light emitting diode chip 50 has a predetermined intensity so as to reduce the difference in intensity due to the difference in azimuth angle in the surface of the chip placement surface 61a of the light emitted from the package 60. Although the concavo-convex shape extending in the direction is formed, the present invention is not limited to this, as long as the light emitting surface of the light emitting diode chip 50 has an anisotropic structure with respect to the in-plane direction of the light emitting layer 52. For example, an elliptical convex portion or concave portion as viewed from above may be formed on the light emitting surface.

(Fourth embodiment)
FIG. 12 is a cross-sectional view illustrating a structure of a light emitting diode device according to a fourth embodiment of the present invention. In the fourth embodiment, unlike the second embodiment, the in-plane of the light-emitting layer is used as the package shape for reducing the difference in intensity due to the difference in the azimuth angle in the plane of the chip arrangement surface of the emitted light. An anisotropic shape with respect to the direction is formed on the package. Specifically, the case where the uneven | corrugated shape extended in a predetermined direction is formed in the light emission surface of the resin mold of a package is demonstrated.

  As shown in FIG. 12, the light emitting diode device according to the fourth embodiment includes one light emitting diode chip 70 and a package 80 in which one light emitting diode chip 70 is disposed.

The light-emitting diode chip 70 is made of a wurtzite nitride-based semiconductor having a (1-102) plane as a main surface. In the light emitting diode chip 70, a well layer (not shown) made of Ga _0.7 In _0.3 N and having a thickness of about 2 nm is formed on the n-type GaN layer 71, and Ga _0.9 In _0.1. A light emitting layer 72 made of MQW in which a barrier layer (not shown) made of N is stacked is formed. A p-type GaN layer 73 is formed on the light emitting layer 72. Similarly to the first embodiment, the n-side electrode 14 is formed on the lower surface of the n-type GaN layer 71, and the light-transmitting p-side electrode 15 is formed on the p-type GaN layer 73. Is formed.

  Here, in the fourth embodiment, as in the first embodiment, the light emission intensity of the light emitted from the light emitting layer 72 is anisotropic with respect to the azimuth angle in the plane of the main surface (upper surface) 72 a of the light emitting layer 72. Have That is, the emission intensity of the light emitted from the light emitting layer 72 is higher in the azimuth direction closer to the direction orthogonal to the [11-20] direction than the light in the azimuth direction parallel to the [11-20] direction. The light becomes bigger.

  Moreover, the package 80 is comprised by the supporting member 61 and the translucent resin mold 82 similarly to the said 3rd Embodiment. The resin mold 82 is an example of the “translucent member” in the present invention.

  In the fourth embodiment, an uneven shape is formed on the light emission surface of the resin mold 82. Specifically, the concave and convex portions of the concavo-convex shape on the light emission surface of the resin mold 82 are formed to have a width W3 of about 2.5 μm and a height H2 of about 2 μm. Further, the concave and convex portions of the concave and convex shape of the resin mold 82 are formed so as to extend in a direction orthogonal to the [11-20] direction and the [-1-120] direction. As a result, it is possible to increase the amount of light emitted from the light emitting diode chip 70 in the direction of the azimuth angle parallel to the [11-20] direction. Thereby, when the light emitted from the light emitting layer 72 has a small light emission intensity in the direction of the azimuth angle of the [11-20] direction, the surface of the chip placement surface 61a of the support member 61 of the light emitted from the package 80 The difference in emission intensity due to the difference in azimuth angle can be reduced.

  For the same reason as in the third embodiment, the size of the concave and convex portions of the concave and convex shapes of the resin mold 82 may be approximately the same as the emission wavelength or may be larger than the emission wavelength. When the emission wavelength is about 500 nm, for example, the width W3 of the recess is preferably about 250 nm or more.

  The remaining structure of the fourth embodiment is similar to that of the aforementioned third embodiment.

  The remaining effects of the fourth embodiment are similar to those of the aforementioned third embodiment.

  In the fourth embodiment, a predetermined direction is provided so as to reduce a difference in intensity due to a difference in azimuth angle in the plane of the chip placement surface 61a of light emitted from the package 80 on the light emission surface of the resin mold. However, the present invention is not limited to this, as long as the light emission surface of the resin mold 82 has an anisotropic structure with respect to the in-plane direction of the light emitting layer 72. That is, the anisotropic structure is a structure having different shapes along the [11-20] direction and the direction orthogonal to the [11-20] direction in the in-plane direction of the light emitting surface, for example, Alternatively, an elliptical convex portion or concave portion as viewed from above may be formed on the light emitting surface.

In the fourth embodiment, the transparent member of the exit surface of the light was made of a resin mold, the present invention is not limited to this, the transparent member, TiO ₂ and _{Nb 2 O 5, Ta 2 O} 5, and inorganic materials such as ZrO ₂ and ZnO, may be composed of organic-inorganic hybrid material of the inorganic and organic materials.

  In the fourth embodiment, as in the modification of the first embodiment, the direction in which the light emission intensity is the highest with respect to the azimuth angle in the plane of the main surface of the light-emitting diode chip 70 is distinguished from the direction in which the light emission intensity is the lowest. Thus, if the light emitting diode chip 70 is formed, the direction in which the light emission intensity of the light emitting diode chip 70 is the largest and the direction of the uneven shape of the resin mold can be easily matched.

(Fifth embodiment)
FIG. 13 is a plan view illustrating a structure of a light emitting diode device according to a fifth embodiment of the present invention. 14 is a cross-sectional view taken along line 200-200 in FIG. 15 is a cross-sectional view taken along line 300-300 in FIG. FIG. 16 is a diagram illustrating a state in which light emitted from the package according to the fifth embodiment illustrated in FIG. 13 is refracted in the [0001] direction and the [000-1] direction. Referring to FIGS. 13 to 16, in the fifth embodiment, unlike in the fourth embodiment, as the shape of the anisotropic package in the in-plane direction of the light emitting layer, the resin mold (lens portion) of the package is used. The light exit surface is configured to deflect light toward an azimuth angle with a lower emission intensity so as to reduce the difference in intensity due to the difference in azimuth angle in the plane of the chip placement surface of the light emitted from the package. doing. More specifically, a case will be described in which the shape of the light emission surface of the package is a shape in which a plurality of convex surfaces having curved surfaces are in contact with each other so as to form a concave shape.

  As shown in FIG. 13, the light emitting diode device according to the fifth embodiment includes one light emitting diode chip 90 and a package 100 in which one light emitting diode chip 90 is disposed.

As shown in FIGS. 14 and 15, the light-emitting diode chip 90 is made of a nitride-based semiconductor having a wurtzite structure having a (11-20) plane as a main surface. In the light emitting diode chip 90, a clad layer 91b made of n-type Al _0.07 Ga _0.93 N is formed on the n-type GaN layer 91a. On the cladding layer 91b, a well layer (not shown) made of Al _0.02 Ga _0.98 N having a thickness of about 2 nm and a barrier layer made of Al _0.07 Ga _0.93 N (see FIG. A light emitting layer 92 made of MQW is stacked. A contact layer 93 made of p-type Al _0.07 Ga _0.93 N is formed on the light emitting layer 92. The contact layer 93 also has a function as a cladding layer. Similarly to the first embodiment, the n-side electrode 14 is formed on the lower surface of the n-type GaN layer 91a, and the light-transmitting p-side electrode 15 is formed on the contact layer 93. Has been.

  Here, in the fifth embodiment, the emission intensity of the light emitted from the light emitting layer 92 has anisotropy related to the azimuth angle in the plane of the main surface (upper surface) 92 a of the light emitting layer 92. That is, the light emission intensity of the light emitted from the light emitting layer 92 is higher in the light in the direction of the azimuth angle parallel to the [1-100] direction than in the direction of the azimuth angle parallel to the [0001] direction. growing.

  Moreover, the package 100 is comprised by the supporting member 61 and the translucent resin mold 102 similarly to the said 4th Embodiment. The resin mold 102 is formed by a filling portion 102 a that fills the concave portion of the support member 61 and a lens portion 102 b that is disposed outside the support member 61. The filling portion 102a and the lens portion 102b are not limited to resin, and may be made of an inorganic material such as glass or an organic / inorganic hybrid material.

  In the fifth embodiment, as shown in FIGS. 13 to 15, the lens portion 102 b is composed of four convex surfaces. Here, each convex surface is in contact with adjacent convex surfaces at the azimuth angles in the [0001] direction and [000-1] direction of the light emitting diode chip 90 so as to form a convex shape. In addition, each convex surface is in contact with adjacent convex surfaces in the [1-100] direction and [-1100] direction azimuth of the light emitting diode chip 90 where the emission intensity is strong so as to form a concave shape. As a result, the light emitted from the lens unit 102b (package 100) is emitted in a state of being refracted in the azimuth directions of the [0001] direction and the [000-1] direction as shown in FIG. Thereby, when the light emitted from the light emitting layer 92 has a small light emission intensity in the azimuth directions of the [0001] direction and the [000-1] direction, the light emitted from the light emitting layer 92 has the light emission intensity. Since it is deflected in the small [0001] direction and [000-1] direction, the difference in emission intensity due to the difference in the azimuth angle in the plane of the chip placement surface 61a of the support member 61 of the light emitted from the package 100 is reduced. be able to.

  The remaining structure of the fifth embodiment is similar to that of the aforementioned fourth embodiment.

  The remaining effects of the fifth embodiment are similar to those of the aforementioned fourth embodiment.

  In the fifth embodiment, the difference in intensity due to the difference in the azimuth angle in the plane of the chip placement surface 61a of the light emitted from the package 100 on the light emission surface of the resin mold 102 (lens portion 102b) of the package 100. However, the present invention is not limited to this, and the light is emitted from the package 100 to the reflective side surface of the package 100. As in the first modification of the fifth embodiment shown in FIG. 17, the light emission intensity of the light emitting diode chip 90 is strong so as to reduce the difference in intensity due to the difference in azimuth angle in the plane of the light chip placement surface 61a. In the azimuth direction, a shape in which a plurality of concave surfaces having curved surfaces are in contact with each other so as to form a convex shape may be formed. 18 is a cross-sectional view taken along the line 400-400 in FIG. 17, and FIG. 19 is a cross-sectional view taken along the line 500-500 in FIG. Further, instead of forming a shape in which a plurality of curved surfaces having curved surfaces are in contact with each other so as to form a concave shape on the light emission surface of the resin mold 102, the second modification of the fifth embodiment shown in FIG. As described above, the resin mold 102 is formed so that the cross section parallel to the light emitting layer 92 is an ellipse, and the major axis direction of the ellipse is substantially in the direction of the azimuth angle where the emission intensity of the light emitted from the light emitting layer 92 is the smallest. The light emitting diode chip 90 may be arranged so as to match the above. In addition, instead of forming a shape in which a plurality of concave surfaces having curved surfaces are in contact with each other so as to form a convex shape on the reflective side surface of the package 100, as in the third modification of the fifth embodiment shown in FIG. The reflective side surface of the package 100 is formed so that the cross section parallel to the light emitting layer 92 is an ellipse, and the major axis direction of the ellipse is substantially in the direction of the azimuth angle where the light emission intensity of the light emitted from the light emitting layer 92 is the smallest. The light emitting diode chip 90 may be arranged so as to match the above.

  In the fifth embodiment, as in the modification of the first embodiment, the direction in which the emission intensity is the highest with respect to the azimuth angle in the plane of the main surface of the light-emitting diode chip 90 and the direction in which the emission intensity is the lowest. As can be distinguished from each other, as shown in FIGS. 17, 20, and 21, if the light emitting diode chip 90 is formed, the light emitting diode chip 90 has a direction with the highest light emission intensity and a curved surface of a resin mold. It becomes easy to match the direction of the convex shape.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the second to fifth embodiments, when there is one light emitting diode chip, the package or the light emitting diode chip is formed in a predetermined shape so that the light emitted from the package is within the surface of the chip arrangement surface. Although the example in which the difference in intensity due to the difference in azimuth angle is reduced has been described, the present invention is not limited to this, and when there is one light emitting diode chip, both the package and the light emitting diode chip are formed in a predetermined shape. Thus, the difference in intensity due to the difference in the azimuth angle in the plane of the chip placement surface of the light emitted from the package may be reduced. Further, when there are a plurality of light emitting diode chips, as in the first embodiment, while arranging the light emitting diode chips so that the direction of one light emitting diode chip and the direction of the other light emitting diode chip intersect, As in the second to fifth embodiments, at least one of the package and the light emitting diode chip may be formed in a predetermined shape.

It is sectional drawing for demonstrating the light emitting diode chip | tip used for this invention. It is the figure which showed the relationship between the direction defined by polar angle (theta) and azimuth angle (phi), the light emitting layer which makes a (11-20) plane the main surface, and the crystal orientation in the surface of a light emitting layer. Light emitted from a quantum well light-emitting layer having GaInN as a main layer with a (11-20) plane as a well layer and tilted by a finite (not 0) angle θ with respect to the [11-20] direction It is the figure which showed the relationship between azimuth angle (phi) and emitted light intensity. 1 is a plan view showing a structure of a light emitting diode device according to a first embodiment of the present invention; FIG. 5 is a cross-sectional view illustrating a structure of the light emitting diode device according to the first embodiment illustrated in FIG. 4. FIG. 5 is a plan view showing a structure of a support member of the light emitting diode device according to the first embodiment shown in FIG. 4. It is the top view which showed the structure of the light emitting diode apparatus by the modification of 1st Embodiment of this invention. FIG. 5 is a plan view illustrating a structure of a light emitting diode device according to a second embodiment of the present invention. FIG. 9 is a cross-sectional view illustrating a structure of a light emitting diode device according to the second embodiment illustrated in FIG. 8. It is the top view which showed the structure of the light emitting diode apparatus by 3rd Embodiment of this invention. FIG. 11 is a cross-sectional view illustrating a structure of a light emitting diode device according to a third embodiment illustrated in FIG. 10. FIG. 6 is a cross-sectional view illustrating a structure of a light emitting diode device according to a fourth embodiment of the present invention. FIG. 6 is a plan view illustrating a structure of a light emitting diode device according to a fifth embodiment of the present invention. It is sectional drawing along the 200-200 line | wire of FIG. It is sectional drawing along the 300-300 line of FIG. It is the figure which showed the state in which the light radiate | emitted from the package by 5th Embodiment shown in FIG. 13 is refracted in the [0001] direction and the [000-1] direction. It is the top view which showed the structure of the light emitting diode apparatus by the 1st modification of 5th Embodiment of this invention. It is sectional drawing along the 400-400 line of FIG. It is sectional drawing along the 500-500 line | wire of FIG. It is the top view which showed the structure of the light emitting diode apparatus by the 2nd modification of 5th Embodiment of this invention. It is the top view which showed the structure of the light emitting diode apparatus by the 3rd modification of 5th Embodiment of this invention.

2, 12, 32, 52, 72, 92 Light emitting layer 2a, 12a, 32a, 52a, 72a, 92a Main surface 10, 30, 50, 70, 90 Light emitting diode chip 10a Light emitting diode chip (first light emitting diode chip)
10b Light emitting diode chip (second light emitting diode chip)
20, 40, 60, 80, 100 Package 21a, 41a, 61a Chip placement surface 53a Light exit surface

Claims (7)

A light emitting diode chip including a light emitting layer having a main surface;
A package having a chip placement surface on which the light emitting diode chip is placed,
The light emitted from the main surface of the light emitting layer has a plurality of different emission intensities depending on the azimuth angle in the plane of the main surface of the light emitting layer,
The package has a concavo-convex shape for scattering light emitted from a main surface of the light emitting layer. A light emitting diode chip including a light emitting layer having a main surface;
A package having a chip placement surface on which the light emitting diode chip is placed,
The light emitted from the main surface of the light emitting layer has a plurality of different emission intensities depending on the azimuth angle in the plane of the main surface of the light emitting layer,
The light emitting diode device, wherein the light emitting surface of the light emitting diode chip has an uneven shape for scattering light emitted from the main surface of the light emitting layer.   The light-emitting diode device according to claim 1, wherein the light-emitting layer is made of any one of a wurtzite structure semiconductor and α-SiC.   The light emitting diode device according to claim 1, wherein a main surface of the light emitting layer includes a surface other than a (0001) surface.   The main surface of the light emitting layer substantially includes a (H, K, -H-K, 0) plane (H and K are integers, and at least one of H and K is not 0). The light emitting diode device according to 1.   The vibrator strength of the light emitting layer with respect to linearly polarized light in the in-plane direction of the main surface of the light emitting layer has a plurality of different magnitudes depending on an azimuth angle in the surface of the main surface of the light emitting layer. The light emitting diode device according to any one of? The appearance of the light-emitting diode chip is formed so that a direction with the highest light emission intensity with respect to an azimuth angle in a plane of the light-emitting diode chip can be distinguished from a direction with the lowest light emission intensity. The light-emitting diode device according to any one of the above.

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