JP2013110353A - Light emitting package, light emitting package array, and manufacturing method of light emitting package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting package which forms a good quality wavelength conversion layer on a light emitting chip such as an LED chip, and to provide a light emitting package array and a manufacturing method of the light emitting package.SOLUTION: A light emitting package comprises: a substrate including a main surface 20 and a main surface 21 which are arranged in the thickness direction; an LED chip 15 which includes an anode and a cathode, is provided on the main surface 20, and emits light of a first wavelength region; a wavelength conversion layer 17 which is formed so as to cover the LED chip 15, is excited by the light of the first wavelength region, and emits light of the second wavelength region; a sealing layer 18 formed so as to cover the wavelength conversion layer 17; an electrode 12 connected with the anode and provided on the main surface 20; an electrode 13 connected with the cathode and provided on the main surface 20; and an electrode 14 which is not electrically connected with the electrode 12 and the electrode 13. At least a part of the electrode 12, at least a part of the electrode 13, at least a part of the electrode 14, and the LED chip 15 are covered by the sealing layer 18.

Description

  The present invention relates to a light emitting package, a light emitting package array, and a method for manufacturing a light emitting package.

  In recent years, development of a white LED capable of obtaining white light by a color mixture of blue light emitted from a blue LED chip and emitted light emitted from a phosphor excited by blue light has been advanced.

  Thus, as a light-emitting device provided with the wavelength conversion layer containing the fluorescent substance excited by blue light, the light-emitting device described in Unexamined-Japanese-Patent No. 2011-151268, etc. are mentioned.

  Such a light emitting device is manufactured, for example, by the following process. First, the blue LED chip is die-bonded at a predetermined position on the package substrate, and then the anode and cathode electrodes formed on the package substrate and the electrode of the blue LED chip are wire-bonded. Next, a phosphor resin obtained by kneading the phosphor with a transparent resin at a high concentration is applied to the blue LED chip to form a wavelength conversion layer. Finally, the transparent resin layer is formed by sealing the blue LED chip and the wavelength conversion layer with a transparent body.

Here, as a method of manufacturing the wavelength conversion layer by applying the phosphor resin, in addition to the method of applying the phosphor resin in which the high-concentration phosphor is kneaded in the transparent resin described above to the LED chip, There is a method of simultaneously forming a wavelength conversion layer and a transparent resin layer by applying a phosphor resin to an LED chip and then allowing the phosphor to naturally settle.
However, if the phosphor concentration is too high, the viscosity of the phosphor resin becomes too high, and the phosphor resin is clogged by the nozzle of the coating device, and the phosphor resin does not wet and spread over the entire LED chip after application to the LED chip. Or production becomes difficult. In the case of a low concentration, since it is necessary to naturally precipitate the phosphor, the viscosity of the phosphor resin has to be reduced, and if the tact of the coating process is long or the number of one lot of LED packages is large, 1 The time until the lot of the phosphor resin is used up becomes long, during which time the phosphor settles in the phosphor resin container of the coating apparatus, and the phosphor concentration distribution is created in the container. If the phosphor resin is applied in such a state, the color unevenness between the LED package at the beginning and the end of the production becomes large.

  Moreover, as a manufacturing method of wavelength conversion layers other than application | coating of fluorescent resin, there exists a manufacturing method as described in Unexamined-Japanese-Patent No. 2007-134378.

  First, the LED chip mounted package connected to the first electrode and the second electrode are immersed in a container filled with a volatile solvent such as IPA (isopropanol) and a phosphor resin. Next, an electric field is generated between the electrodes by applying a voltage between the first electrode and the second electrode. At this time, the force due to the charge and electric field of the phosphor acts on the phosphor and moves in the solvent toward either the positive or negative electrode depending on the charge of the phosphor (this phenomenon is called electrophoresis). ) Here, the fluorescent material can be collected around the LED chip by setting the electrode on which the fluorescent material is sucked as the first electrode. Finally, the wavelength conversion layer can be formed by removing the LED package from the solvent and volatilizing the solvent.

JP 2011-151268 A JP 2007-134378 A

  However, a manufacturing method such as Japanese Patent Application Laid-Open No. 2007-134378 requires a step of collecting phosphors on an LED chip using electrophoresis and a step of volatilizing a solvent. Become more. In addition, a large container is required to immerse a large number of LED packages, and it is difficult to make the phosphor concentration distribution in such a container uniform, so that the color unevenness of each LED package tends to increase. There is.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a light emitting package, a light emitting package array, and a method for manufacturing a light emitting package that can satisfactorily form a wavelength conversion layer of an LED package. Is to provide.

  A light emitting package according to the present invention includes a substrate including a first main surface and a second main surface arranged in a thickness direction, an anode and a cathode, and is provided on the first main surface, and also has light in a first wavelength region. A light emitting element that emits light, a wavelength conversion layer that is excited by light in the first wavelength region and emits light in the second wavelength region, and is formed to cover the wavelength conversion layer The sealing layer, the first electrode connected to the anode and provided on the first main surface, the second electrode connected to the cathode and provided on the first main surface, and the first electrode and the second electrode A third electrode that is not electrically connected.

  At least a part of the first electrode, at least a part of the second electrode, at least a part of the third electrode, and the light emitting element are covered with a sealing layer. Preferably, the light emitting element is mounted on at least one of the first electrode, the second electrode, and the third electrode.

  Preferably, of the first electrode, the second electrode, and the third electrode, the electrode on which the light emitting element is not mounted is disposed so as to surround the periphery of the light emitting element. Preferably, the light emitting element is mounted on the third electrode and is provided so as to surround the light emitting element with the first electrode and the second electrode.

  Preferably, the third electrode includes a mounting portion on which the light emitting element is mounted, and a connecting portion connected to the mounting portion and reaching the second main surface from the first main surface. Preferably, the light emitting element is mounted so as to straddle the first electrode and the second electrode, and the third electrode is provided so as to surround the periphery of the light emitting element in an annular shape. Preferably, the light emitting element includes a reflection portion provided on the mounting surface.

  Preferably, the light emitting element is mounted on at least one of the first electrode, the second electrode, and the third electrode, and the electrode on which the light emitting element is mounted is formed of a high reflectance metal. The reflectance of the light in the first wavelength region of the high reflectance metal is higher than the reflectance of reflecting the light in the first wavelength region of gold. Preferably, the light emitting element is an LED chip.

  Preferably, the wavelength conversion layer is formed in a hemispherical shape centering on the light emitting element, and the sealing layer is formed in a hemispherical shape centering on the light emitting element. A light emitting package according to the present invention includes a substrate including a plurality of first main surfaces and second main surfaces arranged in the thickness direction, an anode and a cathode, and is provided on the first main surface and has a first wavelength range. The light emitting element that emits the light, the first electrode connected to the anode, the second electrode connected to the cathode, and the light emitting element mounted without being electrically connected to the first electrode and the second electrode The third electrode, the first electrode, the second electrode, the fourth electrode that is not electrically connected to the third electrode, and the light emitting element are formed so as to cover the second wavelength by absorbing light in the first wavelength region. A wavelength conversion layer that emits light in a wavelength region; and a sealing layer that is formed to cover at least a part of the third electrode and at least a part of the fourth electrode. Preferably, the third electrode includes a mounting portion on which the light emitting element is mounted. In the light emitting package array according to the present invention, a plurality of the light emitting packages are connected. The first electrodes provided in each of the light emitting packages are connected to each other. The second electrodes provided in the light emitting package are connected to each other. The third electrodes provided in each of the light emitting packages are connected to each other.

  Preferably, the third electrode includes a mounting portion on which the light emitting element is mounted. In addition to connecting the first electrodes to each other, a plurality of first connection wirings for connecting the second electrodes to each other and a plurality of second connection wirings for connecting the mounting parts to each other are further provided. The first connection wiring and the second connection wiring are alternately arranged.

  A manufacturing method of a light emitting package according to the present invention includes a first main surface and a second main surface arranged in the thickness direction, and a first electrode, a second electrode, and a third electrode are provided on the first main surface. And a step of preparing a substrate and a step of mounting a light emitting element on the first main surface. A method of manufacturing a light emitting package includes mixing a phosphor in a transparent resin so as to cover at least a part of the first electrode, at least a part of the second electrode, at least a part of the third electrode, and the light emitting element. The phosphor is applied by an electric field formed by applying a voltage between at least one of the first electrode and the second electrode and the third electrode after forming the phosphor resin and forming the phosphor resin. And a step of electrically moving. Preferably, the light emitting element is mounted on the third electrode. Preferably, the light emitting element is mounted across the first electrode and the second electrode.

  Preferably, the method for manufacturing a light emitting package further includes a step of forming a liquid repellent film on the first main surface, wherein the liquid repellent film includes at least a part of the first electrode and at least a part of the second electrode. The third electrode is formed so as to expose at least a portion of the third electrode and a portion of the first main surface on which the light emitting element is mounted. Preferably, the phosphor resin is formed of a phosphor, silica, and a transparent resin. An optical package according to the present invention includes a first main surface and a second main surface arranged in a thickness direction, and a first electrode, a second electrode, a third electrode, and a fourth electrode are provided on the first main surface. Preparing a substrate, mounting the light emitting element on the fourth electrode, connecting the first electrode and the light emitting element, mounting the second electrode and the light emitting element, and at least part of the third electrode Forming a phosphor resin in which a phosphor is mixed with a transparent resin so as to cover at least a part of the fourth electrode and the light emitting element; and after forming the phosphor resin, the third electrode and the fourth electrode And a step of causing the phosphor to be electrically driven by an electric field formed by applying a voltage.

  According to the light emitting package, the light emitting package array, and the light emitting package manufacturing method according to the present invention, the wavelength conversion layer can be favorably formed around the light emitting chip.

It is sectional drawing of the LED package 10 which concerns on this Embodiment. It is a top view which shows typically the LED package 10 shown in FIG. 2 is an enlarged cross-sectional view showing the periphery of an LED chip 15. FIG. 2 is a cross-sectional view showing an LED package 10. FIG. 2 is a cross-sectional view showing an LED chip 15, a wavelength conversion layer 17, and a sealing layer 18. FIG. It is sectional drawing which shows the 1st process of the manufacturing method of the LED package 10 which concerns on this Embodiment. It is sectional drawing which shows the process after the manufacturing process shown in FIG. It is sectional drawing in the VIII-VIII line shown in FIG. It is sectional drawing which shows the process after the manufacturing process shown in FIG. It is sectional drawing in the XX line shown in FIG. It is sectional drawing which shows the process after the manufacturing process shown in FIG. It is sectional drawing in the XII-XII line | wire shown in FIG. It is sectional drawing which shows the process after the manufacturing process shown in FIG. It is sectional drawing in the XIV-XIV line | wire shown in FIG. It is sectional drawing which shows the process after the manufacturing process shown in FIG. It is a top view in the manufacturing process shown in FIG. It is a schematic diagram which shows typically the mounting part 14a, the circular arc part 13a, and fluorescent substance resin 62. FIG. It is a top view which shows the state which the electric idle was completed. It is sectional drawing in the XIX-XIX line | wire shown in FIG. FIG. 20 is a plan view showing a step after the manufacturing step shown in FIGS. 18 and 19. It is sectional drawing in the XXI-XXI line shown in FIG. It is sectional drawing of the LED package 10 which concerns on this Embodiment 2. FIG. It is a top view of the LED package 10 shown in FIG. 5 is a plan view showing a manufacturing process of the LED package 10. FIG. FIG. 5 is a plan view showing an LED package array 50. It is sectional drawing which shows the LED package 10 which concerns on this Embodiment. FIG. 27 is a plan view of the LED package 10 shown in FIG. 26. 5 is a plan view showing a first step in a manufacturing process of the LED package 10. FIG. FIG. 29 is a plan view showing a step after the manufacturing step shown in FIG. 28. FIG. 30 is a plan view showing a step after the manufacturing step shown in FIG. 29. 6 is a plan view showing an LED package array according to Embodiment 2. FIG. It is sectional drawing which shows the LED package 10 which concerns on this Embodiment 3. FIG. It is a top view of the LED package 10 shown in FIG. It is a top view which shows the 1st process of the manufacturing process of the LED package 10 which concerns on this Embodiment 4. FIG. FIG. 35 is a plan view showing a step after the manufacturing step shown in FIG. 34. FIG. 36 is a plan view showing a step after the manufacturing step shown in FIG. 35. FIG. 37 is a plan view showing a step after the manufacturing step shown in FIG. 36. FIG. 38 is a plan view showing a step after the manufacturing step shown in FIG. 37. FIG. 3 is a plan view for explaining Example 1; FIG. 3 is a plan view for explaining Example 1;

  A light emitting package, a light emitting package array, and a method for manufacturing the light emitting package according to the present embodiment will be described with reference to FIGS.

(Embodiment 1)
FIG. 1 is a cross-sectional view of an LED package 10 according to the present embodiment. As shown in FIG. 1, the LED package 10 includes a substrate 11 having a main surface 20 and a main surface 21, a first electrode 12 formed on the main surface 20, and a second electrode formed on the main surface 20. The electrode 13 includes a third electrode 14 formed on the main surface 20, and an LED chip 15 including an anode and a cathode and mounted on the third electrode 14.

  Further, the LED package 10 covers the LED chip 15 so that the gold wire 16a connecting the anode of the LED chip 15 to the first electrode 12, the gold wire 16b connecting the cathode of the LED chip 15 to the second electrode 13, and the LED chip 15. The formed wavelength conversion layer 17, the sealing layer 18 formed so as to cover the wavelength conversion layer 17, and the liquid repellent film formed on the main surface 20 so as to surround the periphery of the sealing layer 18 31.

  The substrate 11 is preferably made of a non-insulating material and a material having high reflectivity. For example, alumina ceramics are used. The substrate 11 is formed in a plate shape and includes main surfaces 20 and 21 arranged in the thickness direction.

  The first electrode 12, the second electrode 13, and the third electrode 14 are formed so as to be electrically independent from each other.

  The first electrode 12 is formed so as to reach the main surface 21 from the main surface 20 through the peripheral surface of the substrate 11. The second electrode 13 is also formed so as to reach the main surface 21 from the main surface 20 through the peripheral surface of the substrate 11. Second electrode 13 is formed on main surface 20.

  FIG. 2 is a plan view schematically showing the LED package 10 shown in FIG. As shown in FIG. 2, the substrate 11 is formed to have a square shape when seen in a plan view, and the outer peripheral edge portion of the substrate 11 includes side portions 22 to 25. Various shapes can be adopted as the shape of the substrate 11.

  The third electrode 14 includes a mounting portion 14 a on which the LED chip 15 is mounted, and a lead-out portion 14 b that is drawn from the mounting portion 14 a toward the outer peripheral edge of the substrate 11. The lead portion 14 b is formed to extend toward the side portion 22 and the side portion 23. In the example shown in FIG. 2, the mounting portion 14a is formed in a circular shape, but various shapes such as a square shape, a rectangular shape, and an elliptical shape can be adopted as the shape of the mounting portion 14a. That is, it is designed according to the shape of the wavelength conversion layer to be formed.

  The first electrode 12 includes an arc portion 12 a extending so as to surround the mounting portion 14 a and a lead portion 12 b drawn from the arc portion 12 a toward the outer peripheral edge portion of the substrate 11. In the example shown in FIG. 2, the arc portion 12 a is formed in a semicircular shape, but the arc portion 12 a may be formed in a semi-rectangular shape or a semi-polygonal shape.

  The lead portion 12b is formed so as to extend from the arc portion 12a toward the side portion 24, and is formed so as to extend on the main surface 21 through the peripheral surface of the substrate 11, as shown in FIG.

  The second electrode 13 includes an arc portion 13 a formed so as to surround the mounting portion 14 a, and a lead portion 13 b formed so as to extend from the arc portion 13 a toward the outer peripheral edge portion of the substrate 11. The lead portion 13 b extends from the arc portion 13 a toward the side portion 25 and is formed so as to pass through the peripheral surface of the substrate 11 and reach the main surface 21.

  Gold plating is applied to the surfaces of the first electrode 12, the second electrode 13, and the third electrode 14 formed as described above to suppress the corrosion of the surface.

  FIG. 3 is an enlarged cross-sectional view showing the periphery of the LED chip 15. As shown in FIG. 3, the LED chip 15 is mounted on the upper surface of the third electrode 14 by a die bonding agent 30 such as a silicone resin.

  The LED chip 15 includes an LED main body 26, a reflection portion 27 provided on the mounting surface of the LED main body 26, an anode 28, and a cathode 29. The reflecting portion 27 is formed by evaporating aluminum on the lower surface of the LED main body 26.

  The LED body 26 includes a light emitting layer 26 a and emits light when a predetermined voltage is applied to the anode 28 and the cathode 29. For example, blue light (for example, light having a wavelength range of 390 nm to 510 nm) is emitted from the light emitting layer 26a.

  A gold wire 16 a is connected to the anode 28, and the anode 28 is connected to the first electrode 12. A gold wire 16 b is connected to the cathode 29, and the cathode 29 is connected to the second electrode 13.

  Here, the surfaces of the first electrode 12 and the second electrode 13 are plated with gold, so that the wire bondability between the gold wires 16a and 16b and the first electrode 12 and the second electrode 13 is improved. Yes.

  1 and 2, the wavelength conversion layer 17 is formed on the third electrode 14 so as to cover the LED chip 15. In FIG. 2, the wavelength conversion layer 17 is formed in the hatched region, and is formed on the mounting portion 14 a and the extraction portion 14 b of the third electrode 14.

  Here, as shown in FIG. 1, the part located on the mounting part 14a among the wavelength conversion layers 17 is formed so that it may become hemispherical shape.

  In FIG. 1, the LED chip 15 is shown large for the sake of explanation, but actually, the LED chip 15 is sufficiently smaller than the size of the wavelength conversion layer 17 and the LED chip 15 can be regarded as a point light source.

  For this reason, the distance between the LED chip 15 and the outer surface of the wavelength conversion layer 17 is substantially uniform over substantially the entire outer surface of the wavelength conversion layer 17 located on the mounting portion 14a. The wavelength conversion layer 17 is formed by applying a phosphor resin obtained by stirring and mixing a phosphor, silica, and a transparent resin onto a substrate, then electrophoresis the phosphor and collecting the phosphor around the LED chip 15. The phosphor is not particularly limited in material and the like, and it is desirable that the emission wavelength of the LED chip 15 is equal to the excitation wavelength of the phosphor, and a phosphor having a predetermined chromaticity may be used.

  As shown in FIG. 2, the sealing layer 18 is formed on the main surface 20 so as to cover the mounting portion 14a, the LED chip 15, the arc portion 12a, and the arc portion 13a. The transparent resin is not particularly limited as long as the material is used, and may satisfy the characteristics desired for a general LED package such as high transmittance, refractive index, and high light resistance. Silicone resins are well known as such transparent resins. Depending on the case, an epoxy resin which is inferior in light resistance but advantageous in cost is also used. The liquid repellent film 31 shown in FIG. 1 is not an essential configuration.

  The operation of the LED package 10 formed as described above will be described. In FIG. 3, when a predetermined voltage is applied to the anode 28 and the cathode 29, the light emitting layer 26a emits light.

  Blue light L is emitted radially from the light emitting layer 26a. When the blue light L enters the wavelength conversion layer 17, the wavelength conversion layer 17 is excited and emitted light L <b> 3 is emitted from the wavelength conversion layer 17. The emitted light L3 is emitted radially.

  For this reason, a part of the emitted light L3 is incident on the third electrode 14. Here, the reflectance of gold with respect to the emission wavelength of each general phosphor is 80% for light from the green phosphor (wavelength: about 550 nm: wavelength range of about 530 nm to about 690 nm), and light from the red phosphor ( About 600 nm: The wavelength range is as high as 92% at a wavelength range of about 460 nm or more and about 580 nm or less, and 90% at the light from the yellow phosphor (about 580 nm: the wavelength range of about 570 nm or more and about 590 nm). For this reason, the light after being wavelength-converted by the wavelength conversion layer 17 has a small absorption even in the gold plating of the third electrode 14 and the like, and can suppress a decrease in luminance.

  The blue light L1, which is a part of the light emitted from the light emitting layer 26a, is emitted toward the mounting surface of the LED chip 15.

  Since the reflection part 27 is provided on the mounting surface of the LED chip 15, the blue light L <b> 1 is reflected by the reflection part 27. As a result, the reflected light of the blue light L1 is incident on the wavelength conversion layer 17 satisfactorily.

  Here, if the reflecting portion 27 is not formed, the blue light L1 is incident on the surface of the third electrode 14. The surface of the third electrode 14 is gold plated. Here, the wavelength of the blue light L1 is about 450 nm, and the reflectance at this time is as low as about 40%. For this reason, when the blue light L1 hits gold plating, a remarkable brightness | luminance fall will occur.

  According to the LED package 10 according to the first embodiment, such a decrease in luminance can be suppressed.

  As described above, since the reflective portion 27 is formed by attaching a highly reflective member such as aluminum or silver to the substrate mounting surface of the LED chip 15, blue light that is going to be emitted from the substrate mounting surface of the LED chip 15 is reflected. It can be prevented from being reflected by the portion 27 and absorbed by the third electrode 14.

  In addition, the reflection part 27 is not an essential structure, and the 3rd electrode 14 which mounts the LED chip 15 is good also as high reflectivity metals, such as silver and aluminum. In this case, the blue light L <b> 1 is reflected on the surface of the third electrode 14.

  FIG. 4 is a cross-sectional view showing the LED package 10. As shown in FIG. 4, part of the emitted light L <b> 3 emitted from the wavelength conversion layer 17 may enter the second electrode 13.

  At this time, the reflectance of green light of the reflectance of gold is about 80%, and the reflectance of red light of the reflectance of gold (about 600 nm: wavelength region is about 460 nm or more and 580 nm or less) is 92%. The reflectance of gold yellow light (about 580 nm: wavelength range of about 570 nm to about 590 nm) is about 90%.

  For this reason, the second electrode 13 and the first electrode 12 are formed of a highly reflective metal such as silver or aluminum, so that the emitted light L3 converted by the wavelength conversion layer 17 is the second electrode 13 or the first electrode 12. Even if it is incident on the electrode, it can be prevented from being absorbed by the electrode.

  FIG. 5 is a cross-sectional view showing the LED chip 15, the wavelength conversion layer 17, and the sealing layer 18. As shown in FIG. 5, the size of the LED chip 15 is very small compared to the wavelength conversion layer 17 and the sealing layer 18, and the LED chip 15 can be regarded as a point light source.

  The blue light LL emitted from the LED chip 15 is converted into emitted light L3 in the wavelength conversion layer 17.

  Here, since the wavelength conversion layer 17 is formed in a hemispherical shape, the distance between the LED chip 15 and the outer surface of the wavelength conversion layer 17 is substantially equal over substantially the entire outer surface of the wavelength conversion layer 17. It is.

  For this reason, by making the diameter of the wavelength conversion layer 17 larger than a predetermined size, the blue light LL from the LED chip 15 can be prevented from entering the sealing layer 18 without being absorbed in the wavelength conversion layer 17. it can. Thereby, it can suppress that the blue light LL is radiate | emitted directly outside.

  Further, the main component of the blue light LL is incident on the outer surface of the wavelength conversion layer 17 at a right angle, as shown in FIG. For this reason, the main component of the blue light LL is prevented from being refracted at the interface between the wavelength conversion layer 17 and the sealing layer 18.

  Further, the main component of the emitted light L3 is perpendicularly incident on the outer surface of the sealing layer 18. For this reason, it can suppress that the emitted light L3 bends in the interface of the outer surface of the sealing layer 18, and an air layer.

  As a result, it is possible to suppress variations in the luminance distribution of light emitted from the sealing layer 18.

A method for manufacturing the LED package 10 configured as described above will be described.
FIG. 6 is a cross-sectional view showing a first step of the method of manufacturing LED package 10 according to the present embodiment. In FIG. 6, a mother substrate 60 having two main surfaces arranged in the thickness direction is prepared. The mother substrate 60 is formed in a rectangular shape, and the outer peripheral edge portion of the mother substrate 60 includes two long side portions facing each other and two short side portions facing each other. Then, slits are formed on the other long side portion at intervals. The slit is formed so as to extend from the other long side portion toward the one long side portion.

  A plurality of formation regions 61a to 61f are defined on the main surface of the mother substrate 60, and the LED package 10 is formed in each of the formation regions 61a to 61f.

  FIG. 7 is a cross-sectional view showing a process after the manufacturing process shown in FIG. 6. As shown in FIG. 7, the connection part 51, the connection part 52, and the mounting part formed in each of the formation regions 61 a to 61 f. 14a, the first electrode 12, and the second electrode 13 are formed.

  Each mounting portion 14a is formed at a substantially central portion of each of the formation regions 61a to 61f. The connection portion 51 includes a base portion 43 formed on one long side portion of the mother substrate 60 and connection wirings 40, 41, 42 formed so as to extend from the base portion 43 toward the other long side portion. . The connection wiring 40, the connection wiring 41, and the connection wiring 42 are provided with a space therebetween.

  The connection wiring 40 connects the mounting portion 14a formed in the formation region 61a and the mounting portion 14a formed in the formation region 61d. The connection wiring 41 connects the mounting portion 14a formed in the formation region 61b and the mounting portion 14a formed in the formation region 61e. The connection wiring 42 connects the mounting portion 14a formed in the formation region 61c and the mounting portion 14a formed in the formation region 61f.

  The connecting portion 52 includes a base portion 48 formed on the other long side portion of the mother substrate 60 and a plurality of base portions 48 extending from the base portion 48 toward the one long side portion and spaced apart from each other. Connection wirings 44, 45, 46 and 47.

  The connection wiring 44 connects the lead portion 12b formed in the formation region 61a and the lead portion 12b formed in the formation region 61d. The connection wiring 44 is formed on one short side portion of the mother substrate 60.

  The connection wiring 45 includes a lead portion 13b formed in the formation region 61a, a lead portion 12b formed in the formation region 61b, a lead portion 13b formed in the formation region 61d, and a lead portion formed in the formation region 61e. 13b is connected.

  The connection wiring 46 includes a lead portion 13b formed in the formation region 61b, a lead portion 12b formed in the formation region 61c, a lead portion 13b formed in the formation region 61e, and a lead portion formed in the formation region 61f. 12b is connected.

  The connection wiring 47 is formed on the other short side portion of the mother substrate 60. The connection wiring 47 connects the lead portion 13b formed in the formation region 61c and the lead portion 13b formed in the formation region 61f.

  Thus, the connection wirings 40, 41, and 42 of the connection part 51 are formed in a comb-tooth shape, and the connection wirings 44, 45, 46, and 47 are also formed in a comb-tooth shape. The connection wirings 40, 41, and 42 of the connection part 51 and the connection wirings 44, 45, 46, and 47 of the connection part 52 are formed so as to alternate with each other. Thus, after forming the 1st electrode 12, the 2nd electrode 13, and 14, the doughnut-shaped liquid repellent film was formed. The mounting portion 14a, the arc portion 12a, and the arc portion 13a are exposed from the annular liquid-repellent film.

  8 is a cross-sectional view taken along line VIII-VIII shown in FIG. 7. As shown in FIG. 8, the mounting portion 14a is formed at the center of the formation region 61a.

  9 is a cross-sectional view showing a step after the manufacturing step shown in FIG. 7, and FIG. 10 is a cross-sectional view taken along line XX shown in FIG.

  As shown in FIGS. 9 and 10, the LED chip 15 is mounted on the mounting portion 14a formed in each of the formation regions 61a to 61f.

  Specifically, the die bond agent 30 is applied on the upper surface of the mounting portion 14 a and the LED chip 15 is placed on the die bond agent 30.

  11 is a cross-sectional view showing a step after the manufacturing step shown in FIG. 9, and FIG. 12 is a cross-sectional view taken along line XII-XII shown in FIG.

  As shown in FIGS. 11 and 12, the gold wire 16a that connects the anode 28 and the first electrode 12 of the LED chip 15 provided in each of the formation regions 61a to 61f, the cathode 29, and the second electrode 13 are connected. A gold wire 16b to be connected is formed.

  13 is a cross-sectional view showing a step after the manufacturing step shown in FIG. 11, and FIG. 14 is a cross-sectional view taken along line XIV-XIV shown in FIG.

  First, the liquid repellent agent formed on the main surface is formed in an annular shape, and the LED chip 15, the mounting portion 14a, the arc portion 12a, and the arc portion 13a provided in each of the formation regions 61a to 61f are repellent. It is exposed from the liquid.

  Therefore, the phosphor resin 62 is applied to a portion of the main surface 20 exposed from the liquid repellent using an application device such as an ink jet device. As a result, the LED chip 15, the mounting portion 14a, the arc portion 12a, and the arc portion 13a provided in each of the formation regions 61a to 61f are covered with the phosphor resin 62.

  At this time, the wettability of the liquid repellent film 31 to the phosphor resin 62 is smaller than the wettability of the mother substrate 60 to the phosphor resin 62.

  For this reason, when the phosphor resin 62 is applied, the phosphor resin 62 can be prevented from being wet and spread over the upper surface of the liquid repellent film 31, and the phosphor resin 62 can be formed uniformly.

  Furthermore, since the wettability of the liquid repellent film 31 is low, the applied phosphor resin 62 has a hemispherical shape. The phosphor resin 62 includes a phosphor obtained by stirring and mixing phosphor, transparent resin, and silica.

  Then, a positive voltage is applied to the connection part 51, and a negative voltage is applied to the connection part 52. At this time, it is not necessary to apply a voltage to each LED package, and an electric field is formed around the mounting portion 14a mounted in each of the formation regions 61a to 61f by applying a voltage to the connecting portion 51 and the connecting portion 52. be able to.

  15 and FIG. 16, an electric field is formed between the arc portion 12a and the mounting portion 14a and between the lead portion 12b and the mounting portion 14a.

  Here, the behavior of the phosphor contained in the phosphor resin 62 will be described with reference to FIG. FIG. 17 is a schematic diagram schematically showing the mounting portion 14a, the arc portion 13a, and the phosphor resin 62.

  As shown in FIG. 17, a positive voltage is applied to the mounting portion 14a, and a negative voltage is applied to the arc portion 13a.

  The phosphor resin 62 includes a transparent resin such as a silicone resin, a plurality of phosphors diffused in the transparent resin, and silica.

  Here, the transparent resin is not particularly limited to materials and the like, and it is only necessary to satisfy characteristics desired for a general LED package such as high transmittance, refractive index, and light resistance. Silicone resins are well known as such transparent resins. Depending on the case, an epoxy resin which is inferior in light resistance but advantageous in cost is also used.

  However, since the charged particle concentration in the transparent resin greatly affects the migration speed of electrophoresis, it should be as large as possible. For example, the pH value may be considered as an index of the charged particle concentration. However, depending on the pH value, the direction of the force acting on the phosphor during electrophoresis changes, so the target pH value is determined according to the electric field to be generated, or the polarity of the applied voltage is determined according to the pH value of the transparent resin. It is necessary to.

  As described above, it is desirable to add silica to the phosphor resin 62 in addition to the phosphor and the transparent resin. By adding silica, the viscosity of the phosphor resin 62 increases, so that the natural sedimentation of the phosphor can be suppressed in the phosphor resin coating apparatus or in the phosphor resin 62 after being applied to the substrate. Thereby, the dispersion | variation in the density | concentration of phosphor and distribution over time can be suppressed. However, if the silica is added too much, the viscosity becomes too high, so that the phosphor resin 62 cannot be applied itself. Furthermore, if the viscous resistance becomes higher than the force acting on the phosphor due to the electric field, there is a risk that electrophoresis will not occur. For this reason, it is desirable to keep the addition amount of silica to such an extent that the phosphor does not settle naturally.

  By adjusting the viscosity of the phosphor resin 62 to such an extent that the phosphor does not spontaneously settle, it is possible to prevent the phosphor resin 62 from clogging the coating nozzle when the phosphor resin 62 is sprayed onto the substrate with an inkjet device. . Further, the phosphor concentration distribution in the coating container of the ink jet apparatus can be maintained in a uniform state for a long time, and in the process of applying the phosphor resin 62, the concentration of the phosphor at the beginning of the application and the phosphor concentration at the end of the application. It is possible to suppress variation in density. Thereby, the color nonuniformity for every LED package 10 produced can be made small.

  In a transparent resin such as a silicone resin, charged particles having positive and negative charges are uniformly dispersed. For example, when phosphor particles charged to a positive charge are mixed, charged particles having a negative charge in the transparent resin are attracted to the phosphor as shown in FIG. 17, and the periphery of the phosphor particles is negative. It is coated with charged particles of charge to form a so-called electric double layer. The phosphor in such a state can be considered as one particle having a negative charge.

  That is, as shown in FIG. 17, when a phosphor resin 62 is applied to a space between positive and negative electrodes and a voltage is applied to generate an electric field, a force due to the electric field is generated in each charged particle, Electrophoresis occurs. At this time, since the phosphor having the electric double layer has a negative charge, it moves toward the positive electrode as a result.

  Here, as a method for generating an electric field in the phosphor resin 62, for example, a method in which the LED chip 15 is mounted on the first electrode 12 and a voltage is applied between the first electrode 12 and the second electrode 13. Can be considered. In this method, since the LED chip 15 is already electrically connected to the first electrode 12 and the second electrode 13, only about 3.5 V is applied between the first electrode 12 and the second electrode 13. Can not do it. With such a potential difference, the intensity of the generated electric field is weak, and the force generated in the phosphor by the electric field is also small. In this case, when the viscosity of the phosphor resin 62 is high, the phosphor does not move. When the viscosity is low, the influence of gravity increases, and the phosphor only settles naturally. Even if the viscosity is adjusted, the moving speed of the phosphor by electrophoresis is low, the tact is long, and the productivity is poor. Therefore, as in the LED package manufacturing method according to the present embodiment, the electrodes to which a voltage is applied in order to generate an electric field may be made independent without being connected by an element such as an LED chip or an electrode pattern. It is not good.

  18 is a plan view showing a state in which the electric movement is completed, and FIG. 19 is a cross-sectional view taken along line XIX-XIX shown in FIG.

  As shown in FIG. 18, the wavelength conversion layer 17 is formed on the upper surface of the connection portion 51. Here, as shown in FIGS. 15 and 16, the arc portion 12a and the arc portion 13a are formed so as to surround the periphery of the LED chip 15 and the mounting portion 14a. It becomes uniform. Since the phosphor is electromoved in a state where the electric field distribution around the LED chip 15 is uniform, as shown in FIG. 19, the phosphor is uniformly gathered around the mounting portion 14a, and the hemispherical wavelength conversion layer 17 is formed. It is formed.

  On the other hand, the phosphor in the phosphor resin 62 gathers around the mounting portion 14a, so that the transparent resin layer 63 is formed around the wavelength conversion layer 17. Since the phosphor resin 62 is formed in a hemispherical shape, the surface of the transparent resin layer 63 is also formed in a hemispherical shape. Thus, after covering the LED chip 15 with the phosphor resin 62 and collecting the phosphor around the LED chip 15 by electrophoresis, the phosphor resin 62 and the transparent resin layer 63 can be simultaneously formed. Has been reduced. Further, when electrophoresis is used, the moving speed of the phosphor can be increased by the applied voltage as compared with the case where the phosphor is naturally precipitated, so that the process time for forming the wavelength conversion layer 17 can be shortened. it can.

  In addition, by adjusting the viscosity of the phosphor resin so that the phosphor is not boring and does not spontaneously settle, it can be applied with a uniform phosphor concentration distribution in the coating container. The color unevenness of each LED package can be reduced.

  Here, as a method of forming the wavelength conversion layer 17, the following method can be considered. First, a container filled with a mixed solution of a volatile solvent and a phosphor is prepared. Then, the substrate on which the first electrode 12, the LED chip 15 connected to the first electrode 12, and the second electrode 13 are formed is immersed in the solution. In a state where the substrate is immersed in the solution, a voltage is applied to each electrode, and the phosphor is collected around the LED chip 15 by electrophoresis. In such a method, a large container is required to immerse a large number of LED packages. Furthermore, since it is difficult to make the phosphor concentration distribution in the container uniform, the amount of phosphor that surrounds each LED package varies due to variations in the phosphor concentration distribution. On the other hand, in the manufacturing method of the LED package 10 according to the present embodiment, a predetermined amount of phosphor resin is applied to each LED package, and the wavelength conversion layer is formed in a system closed with the phosphor resin. . For this reason, the dispersion | variation in the amount of fluorescent substance can be suppressed, and as a result, the color nonuniformity for every LED package 10 can be made small.

  20 is a plan view showing a step after the manufacturing step shown in FIG. 18 and FIG. 19, and FIG. 21 is a cross-sectional view taken along line XXI-XXI shown in FIG.

  As shown in FIG. 20, the mother substrate 60 is placed in an oven and baked to form a part of the wavelength conversion layer 17 and the LED chip 15 in each of the formation regions 61 a to 61 f. A sealing layer 18 is formed. Thereby, the LED package array 50 in which the LED package 10 is formed in the formation regions 61a to 61f is formed.

  As described above, the LED package array 50 is formed by connecting a plurality of LED packages 10.

  As shown in FIG. 20, the LED package array 50 includes a plurality of first electrodes 12, a plurality of second electrodes 13, and a plurality of third electrodes 14. The first electrodes 12 and the second electrodes 13 are connected to each other by the connection wirings 44 to 47, and the first electrode 12 and the second electrode 13 are connected to each other.

  Further, the mounting portions 14 a are connected by the connection wirings 40 to 42 of the connection portion 51 and the base portion 43.

  Then, by cutting the LED package array 50 at the groove portion CL shown in FIG. 20, a plurality of LED packages 10 shown in FIG. 1 can be obtained.

(Embodiment 2)
The LED package 10 according to the second embodiment will be described with reference to FIGS. Of the configurations shown in FIGS. 22 to 25, the configurations shown in FIGS. 1 to 21 may be given the same reference numerals and explanation thereof may be omitted.

  FIG. 22 is a cross-sectional view of the LED package 10 according to the second embodiment. As shown in FIG. 22, the LED package 10 includes a substrate 11, a first electrode 12, a second electrode 13, a third electrode 14, an LED chip 15 mounted on the third electrode 14, and an LED. A wavelength conversion layer 17 formed so as to cover the chip 15 and a sealing layer 18 formed on the main surface 20 so as to cover the wavelength conversion layer 17 are provided.

  FIG. 23 is a plan view of the LED package 10 shown in FIG. As shown in FIGS. 23 and 22, third electrode 14 includes a mounting portion 14 a and a connection portion 14 c connected to the lower surface of mounting portion 14 a and reaching main surface 21 from main surface 20.

  In the LED package 10 according to the second embodiment, the wavelength conversion layer 17 is formed on the mounting portion 14 a and is formed so as to cover the LED chip 15. The wavelength conversion layer 17 is formed in a substantially hemispherical shape.

A method for manufacturing the LED package 10 thus formed will be described.
FIG. 24 is a plan view showing the manufacturing process of the LED package 10. In the process shown in FIG. 24, the first electrode 12, the second electrode 13, the third electrode 14, and the connection portion 52 are formed on the main surface of the mother substrate 60, and are formed on the upper surface of the mounting portion 14a. An LED chip 15 is mounted. The first electrode 12 and the second electrode 13 are connected by connection wirings 44 to 46 of the connection part 52. In the second embodiment, the connecting portion 51 described in the first embodiment is not formed.

  After the phosphor resin 62 is applied to each of the formation regions 61a to 61f, a + voltage is applied to the mounting portion 14a, and a-voltage is applied to the connection portion 52. In addition, when applying a voltage to the mounting part 14a, a voltage is applied to the connection part 14c provided in the back surface of the mother board | substrate 60. FIG.

  In this way, by applying a voltage, an electric field is generated between the mounting portion 14a and the arc portion 12a and between the mounting portion 14a and the arc portion 13a.

  Thereby, the fluorescent substance contained in the transparent resin layer 63 is gathered on the upper surface of the mounting portion 14a by the electric movement. Thereby, the hemispherical wavelength conversion layer 17 is formed on the upper surface of the mounting portion 14a.

  Here, the mounting portion 14 a is formed in a circular shape, and the wiring connected to the mounting portion 14 a is not formed on the main surface of the mother substrate 60. Further, also in the second embodiment, the periphery of the mounting portion 14a is surrounded by the arc portion 12a and the arc portion 13a. For this reason, the phosphor is concentrated on the upper surface of the mounting portion 14a, and the substantially hemispherical wavelength conversion layer 17 is favorably formed on the upper surface of the mounting portion 14a.

  In this manner, the mother substrate 60 on which the wavelength conversion layer 17 is formed is baked. Thereby, as shown in FIG. 25, the LED package array 50 is formed. Then, by cutting the LED package array 50, the LED package 10 according to the second embodiment can be manufactured.

  In addition, although the LED package 10 according to the first and second embodiments is a face-up method, the method may be a face-down method.

(Embodiment 3)
The LED package 10 according to the third embodiment will be described with reference to FIGS. Of the configurations shown in FIGS. 26 to 31, configurations that are the same as or correspond to the configurations shown in FIGS. 1 to 25 may be given the same reference numerals and explanation thereof may be omitted.

  FIG. 26 is a cross-sectional view showing the LED package 10 according to the present embodiment, and FIG. 27 is a plan view of the LED package 10 shown in FIG.

  In FIG. 26, the LED package 10 includes a substrate 11 including a main surface 20 and a main surface 21, a third electrode 14 formed on the main surface 20, and a first electrode 12 partially formed on the main surface 20. And a second electrode 13. The LED package 10 includes an LED chip 15, a wavelength conversion layer 17 formed so as to cover the LED chip 15, and a sealing layer 18 formed so as to cover the wavelength conversion layer 17.

  The first electrode 12 is connected to the mounting portion 12c formed on the main surface 20, the connecting portion 12d connected to the mounting portion 12c, reaching the main surface 21 from the main surface 20, and the connecting portion 12d. And a back surface portion 12e formed on the surface 21.

  The second electrode 13 is connected to the mounting portion 13c formed on the main surface 20, the connecting portion 13d connected to the mounting portion 13c, reaching the main surface 21 from the main surface 20, and the connecting portion 13d. And a back surface portion 13e formed on the surface 21.

  As shown in FIG. 27, both the mounting portion 12c and the mounting portion 13c are formed in a semicircular shape. The outer peripheral edge portion of the mounting portion 12c includes a semicircular edge portion and a straight portion connecting both ends of the semicircular edge portion. The outer peripheral edge portion of the mounting portion 13c includes a semicircular edge portion and a straight portion connecting both ends of the semicircular edge portion.

  The mounting portion 12c and the mounting portion 13c are arranged at a distance from each other, and the mounting portion 12c and the mounting portion are arranged such that the linear portion of the mounting portion 12c and the linear portion of the mounting portion 13c face each other. 13c is arranged. The LED chip 15 is mounted so as to straddle the mounting portion 13c from the mounting portion 12c.

  As shown in FIG. 26, the LED chip 15 includes an anode 28 and a cathode 29, and the anode 28 is electrically connected to the mounting portion 12c. The cathode 29 is electrically connected to the mounting portion 13c.

  Third electrode 14 is formed on main surface 20. The third electrode 14 includes a mounting portion 12c, a mounting portion 13c, an annular annular portion 14d formed so as to surround the LED chip 15, and an extraction portion 14e and an extraction portion 14f connected to the annular portion 14d. Including.

  In FIG. 27, the wavelength conversion layer 17 is omitted, but the wavelength conversion layer 17 is formed in a hemispherical shape with the LED chip 15 as the center.

  A method for manufacturing the LED package 10 thus formed will be described. FIG. 28 is a plan view showing a first step in the manufacturing process of the LED package 10. As shown in FIG. 28, a mother substrate 60 is prepared. A through hole 70 and a through hole 71 are formed in each of the formation regions 61 a to 61 f of the mother substrate 60.

  Each of the through hole 70 and the through hole 71 is formed so as to reach the other main surface from one main surface of the mother substrate 60.

  FIG. 29 is a plan view showing a step after the manufacturing step shown in FIG. In FIG. 29, first, sputtering is performed on the mother substrate 60 to form a metal film on the surface of the mother substrate 60. Thereafter, the mother substrate 60 is attached to the solution to grow a metal film, and the through holes 70 and 71 shown in FIG. 28 are filled with the metal film.

  Thereafter, photolithography is applied to the metal film to form the first electrode 12, the second electrode 13, and the third electrode 14 in the formation regions 61a to 61f. At this time, connection portions 72 that connect the third electrodes 14 formed in the formation regions 61a to 61f are also formed.

  The connection portion 72 includes a base portion 73 formed on one long side portion of the mother substrate 60 and a plurality of connection wirings 74 to 77 extending from the base portion 73 toward the other long side portion.

  30 is a plan view showing a step after the manufacturing step shown in FIG. In FIG. 30, the LED chip 15 is mounted on the mounting portion 12c and the mounting portion 13c, and the LED chip 15 is electrically connected to the mounting portion 12c and the mounting portion 13c.

  Then, a positive voltage is applied to the first electrode 12 and the second electrode 13, and a negative voltage is applied to the connection portion 72.

  Thereby, an electric field is formed between the mounting part 12c and the mounting part 13c, and the annular part 14d. Here, since the annular portion 14d is formed so as to surround the periphery of the mounting portion 12c and the mounting portion 13c, the strength portion of the electric field formed between the mounting portion 12c and the mounting portion 13c and the annular portion 14d. Is substantially uniform.

  For this reason, the phosphors in the phosphor resin 62 gather evenly around the LED chip 15. Thereby, the wavelength conversion layer 17 is formed in a hemispherical shape. Accordingly, as shown in FIG. 31, a transparent resin layer 63 covering the wavelength conversion layer 17 is formed.

  Then, by baking the mother substrate 60 on which the wavelength conversion layer 17 and the like are formed, the transparent resin layer 63 becomes the sealing layer 18 and the LED package array 50 is formed. The LED package array 50 according to the third embodiment is also in a state where a plurality of LED packages 10 are connected.

  A plurality of LED packages 10 can be created by dividing the LED package array 50.

(Embodiment 4)
The LED package 10 and the LED package array 50 according to the fourth embodiment and a method for manufacturing the LED package 10 will be described with reference to FIGS. Of the configurations shown in FIGS. 32 to 38, the same or corresponding components as those shown in FIGS. 1 to 31 may be denoted by the same reference numerals and description thereof may be omitted.

  FIG. 32 is a cross-sectional view showing the LED package 10 according to the third embodiment. FIG. 33 is a plan view of the LED package 10 shown in FIG.

  As shown in FIGS. 32 and 33, the LED package 10 is formed on the substrate 11 including the main surface 20 and the main surface 21, the first electrode 12 formed on the surface of the substrate 11, and the surface of the substrate 11. The second electrode 13, the third electrode 14 formed on the main surface 20 of the substrate 11, the fourth electrode 82 formed on the main surface 20 of the substrate 11, and the fifth electrode 83 formed on the main surface 20. With.

  The LED package 10 is formed so as to cover the LED chip 15 mounted on the upper surface of the third electrode 14, the wavelength conversion layer 17 formed so as to cover the LED chip 15, and the wavelength conversion layer 17. And a sealing layer 18.

  None of the first electrode 12, the second electrode 13, the third electrode 14, the fourth electrode 82, and the fifth electrode 83 are electrically connected. The first electrode 12 and the anode of the LED chip 15 are connected by a gold wire 16a, and the second electrode 13 and the cathode of the LED chip 15 are connected by a gold wire 16b.

  The third electrode 14 includes a mounting portion 14a on which the LED chip 15 is mounted and a lead-out portion 14b connected to the mounting portion 14a. The mounting portion 14 a is formed in a circular shape, and the lead-out portion 14 b is formed from one side portion 22 to the side portion 23 of the substrate 11.

  The fourth electrode 82 is disposed adjacent to the third electrode 14, and the fourth electrode 82 includes an arcuate arc portion 84 formed so as to surround the periphery of the mounting portion 14 a, and an arc portion 84. And a connected drawer portion 85.

  The fifth electrode 83 is disposed on the opposite side to the fourth electrode 82 with respect to the third electrode 14. The fifth electrode 83 includes an arc portion 87 formed so as to surround the periphery of the mounting portion 14 a and a lead-out portion 86 connected to the arc portion 87. Here, the arc portion 84 of the fourth electrode 82 and the arc portion 87 of the fifth electrode 83 are formed so as to surround substantially the entire circumference of the mounting portion 14a.

  The first electrode 12 is disposed on the opposite side of the third electrode 14 with respect to the fourth electrode 82, and the second electrode 13 is disposed on the opposite side of the third electrode 14 with respect to the fifth electrode 83. Yes. The sealing layer 18 covers the LED chip 15, the mounting part 14 a, the arc part 84, and the arc part 87, and covers at least a part of the lead part 14 b and at least a part of the lead part 85. Is formed.

  The wavelength conversion layer 17 is formed on a portion of the upper surface of the third electrode 14 that is covered with the sealing layer 18. A portion of the wavelength conversion layer 17 formed on the mounting portion 14a is formed in a substantially hemispherical shape.

  Thus, also in the LED package 10 according to the fourth embodiment, the portion of the wavelength conversion layer 17 that covers the LED chip 15 is formed in a hemispherical shape, and thus the LED package 10 according to the first embodiment. The same effect can be obtained.

A method for manufacturing the LED package 10 formed as described above will be described.
FIG. 34 is a plan view showing a first step in the manufacturing process of LED package 10 according to the fourth embodiment. As shown in FIG. 34, a mother substrate 60 in which a plurality of holes 90 and holes 91 are formed is prepared.

  FIG. 35 is a plan view showing a step after the manufacturing step shown in FIG. In FIG. 35, a metal film is formed on the surface of the mother substrate 60 by sputtering. Thereafter, the mother substrate 60 on which the sputtering has been performed is attached to the solution to grow a metal film. Thereby, the hole 90 and the hole 91 shown in FIG. 34 are filled with the metal film.

  Thereafter, the mother substrate 60 is etched, and the 92 first electrode 12, the second electrode 13, the third electrode 14, the fourth electrode 82, and the fifth electrode 83 are formed on the main surface of the mother substrate 60. The connection part 92 and the connection part 93 are formed.

  The main surface of the mother substrate 60 includes a plurality of forming regions 61a, forming regions 61b, forming regions 61d, and forming regions 61e. In each forming region, the first electrode 12, the second electrode 13, and the third electrode 14, the fourth electrode 82, and the fifth electrode 83 are formed.

  Here, the third electrode 14, the fourth electrode 82, and the fifth electrode 83 formed in the formation region 61a are the third electrode 14, the fourth electrode 82, and the fifth electrode 83 that are formed in the formation region 61b. Each is connected to the electrode 83.

  Further, the third electrode 14, the fourth electrode 82 and the fifth electrode 83 formed in the formation region 61b are respectively connected to the third electrode 14, the fourth electrode 82 and the fifth electrode 83 formed in the formation region 61e. It is connected. The third electrode 14 formed in each formation region is connected to the connection portion 92, and the extraction portion 85 and the extraction portion 86 are connected to the connection portion 93.

  Note that the second electrode 13 formed in the formation region 61a and the first electrode 12 formed in the formation region 61b are connected, and the second electrode 13 formed in the formation region 61d and the formation region 61e are connected to each other. The formed first electrode 12 is integrally connected.

  FIG. 36 is a plan view showing a step after the manufacturing step shown in FIG. As shown in FIG. 36, the LED chip 15 is mounted on the mounting portion 14a formed in each formation region.

  Thereafter, the gold wire 16 a and the gold wire 16 b are connected to the LED chip 15. Then, the anode of the LED chip 15 and the first electrode 12 are connected, and the cathode of the LED chip 15 and the second electrode 13 are connected.

  FIG. 37 is a plan view showing a manufacturing step after the manufacturing step shown in FIG. As shown in FIG. 37, the phosphor resin 62 is applied so as to cover the mounting portion 14a, the arc portion 84, and the arc portion 87.

  At this time, at least a part of the lead part 14 b, at least a part of the lead part 85, and at least a part of the lead part 86 are covered with the phosphor resin 62. Note that a liquid repellent film may be formed on the main surface of the mother substrate 60 before the phosphor resin 62 is applied. Specifically, a liquid repellent film is formed on the main surface of the mother substrate 60, and the liquid repellent film is patterned.

  As a result, a region of the mother substrate 60 to which the phosphor resin 62 is applied is exposed from the liquid repellent film. After forming such a liquid repellent film, the phosphor resin 62 may be applied.

  FIG. 38 is a plan view showing a step after the manufacturing step shown in FIG. In FIG. 38, a positive voltage is applied to the third electrode 14, and a negative voltage is applied to the fourth electrode 82 and the fifth electrode 83. At this time, the third electrode 14, the fourth electrode 82, and the fifth electrode 83 are not electrically connected to the LED chip 15. For this reason, even if a voltage is applied to the fourth electrode 82 and the fifth electrode 83, no voltage is applied to the LED chip 15.

  Therefore, even if a large voltage is applied to the fourth electrode 82 and the fifth electrode 83, the possibility of damaging the LED chip 15 can be suppressed. For this reason, the phosphor in the phosphor resin 62 can be formed around the LED chip 15 in a short time by applying a large voltage to the fourth electrode 82 and the fifth electrode 83.

  At this time, the LED chip 15 is mounted on the mounting portion 14a, and the arc portion 84 and the arc portion 87 are formed so as to surround the LED chip 15a. In particular, in the example according to the fourth embodiment, each of the arc portion 84 and the arc portion 87 is formed in an arc shape with the mounting portion 14a as the center.

  For this reason, the electric field strength formed between the mounting portion 14a and the arc portion 84 and between the mounting portion 14a and the arc portion 87 is distributed substantially uniformly. For this reason, the phosphor contained in the phosphor resin 62 is evenly formed on the upper surface of the mounting portion 14a. Accordingly, a hemispherical wavelength conversion layer 17 is formed so as to cover the LED chip 15. At this time, the wavelength conversion layer 17 is formed not only on the upper surface of the mounting portion 14a but also on the upper surface of the lead portion 14b.

  Further, the phosphor in the phosphor resin 62 gathers on the mounting portion 14 a or the like, so that the transparent resin layer 63 is formed so as to cover the wavelength conversion layer 17.

  Then, the mother substrate 60 on which the transparent resin layer 63 is formed is heated in an oven, whereby the transparent resin layer 63 is baked and the sealing layer 18 is formed.

  Thereby, the LED package array 50 in which the LED package 10 is formed in each formation region can be obtained.

  The LED package array 50 includes a connection portion 93 and a connection portion 92, and the fourth electrode 82 and the fifth electrode 83 are connected to the connection portion 93, and the third electrode 14 is connected to the connection portion 92. Is connected.

  The fourth electrode 82 and the fifth electrode 83 are formed in a comb shape, and the third electrode 14 is also formed in a comb shape. The third electrode 14 is inserted between the fourth electrode 82 and the fifth electrode 83, and the fourth electrode 82, the third electrode 14, and the fifth electrode 83 are alternately arranged.

  Thus, the LED package 10 according to the fourth embodiment can be obtained by dividing the mother substrate 60 on which the transparent resin layer 63 is formed for each formation region.

  In the examples of the first to fourth embodiments, the LED chip 15 is mounted on the electrode, and the wavelength conversion layer 17 is formed so as to cover the LED chip 15 by applying a voltage to the electrode. However, it is not essential that the LED chip 15 be disposed on the electrode when the wavelength conversion layer 17 is formed.

  For example, you may make it arrange | position LED chip 15 so that the electrode used in order to make a fluorescent substance electrically move may be adjacent. Even in this case, the phosphors gather around the electrodes due to the electric migration. At this time, the wavelength conversion layer 17 is formed so as to cover the LED chip 15 by collecting the phosphors so as to cover the LED chip 15.

  That is, in the present invention, an electrode for collecting phosphors is prepared, and a wavelength conversion layer is formed by applying a voltage to the electrode.

  A first embodiment of the present invention will be described with reference to FIGS. 39 and 40. FIG. As shown in FIG. 39, a comb-tooth pattern of copper wiring 81 (copper foil thickness 35um, wiring pitch 1.5mm, wiring width 0.55mm) is created on the wiring sheet 80. Then, after applying a phosphor resin on the pattern and sandwiching it with a glass plate, as shown in FIG. 40, when a voltage of 1000 V was applied so that the copper wiring 81 alternately became a positive electrode and a negative electrode, The phosphors gathered. From this result, it can be confirmed that the phosphor particles used in this verification experiment are negatively charged.

  A method for manufacturing the LED package 10 according to the second embodiment will be described with reference to FIGS. As shown in FIG. 6, the mother substrate 60 prepares alumina ceramic molded into a flat plate shape. Further, by forming a groove at the position of the alternate long and short dash line shown in FIG. 6 when the substrate is molded, it is possible to easily perform division in a subsequent process.

  Here, the thickness of the alumina ceramic was 1 mm, and the grooves were formed to have a square of 5 mm per package.

  Next, as shown in FIG. 7, an electrode pattern was formed on the first electrode 12, the second electrode 13, the third electrode 14 and the like by Au thick film printing. The Au thick film was 35 um. Further, the electrode pattern of the LED package was formed such that the arc portion 12a of the first electrode 12 and the arc portion 13a of the second electrode 13 had an inner diameter of 3 mm, a width of 25 um, and an arc shape centered on the center of the substrate. Further, the mounting portion 14a of the third electrode 14 was formed to have a circular shape with a diameter of 2 mm and centering on the center of the substrate. Further, the first electrode 12 and the second electrode 13 are connected to each other so that the connection portion comes to the upper end portion of the LED package array, the third electrodes 14 are connected to each other, and the connection portion comes to the lower end portion of the LED package array. I am doing so.

  A donut-shaped liquid repellent film having an inner diameter of 4 mm and a width of 0.1 mm was formed. The mounting portion 14a, the arc portion 12a, and the arc portion 13a are exposed from the annular liquid-repellent film.

  Next, a die-bonding agent of silicone resin was applied onto the mounting portion 14a formed with φ2 mm, and the LED chip 15 was die-bonded as shown in FIG. 9 (step 1). Here, the LED chip 15 used has an emission wavelength of 450 nm, a size of 1 mm in length, 1 mm in width, and 0.1 mm in height, and a reflective surface is formed on the substrate mounting surface by depositing 100 nm of aluminum. Yes.

  Next, as shown in FIG. 11, wire bonding was performed to the first electrode 12 and the second electrode 13, and the anode and cathode electrodes of the LED chip using a gold wire having a diameter of 25 μm, and they were electrically connected. (Step2).

  Next, as shown in FIG. 13, the phosphor resin 62 obtained by stirring and mixing the phosphor, the transparent resin and the silica is formed in the center of the formation regions 61a to 61f so that the phosphor resin 62 becomes a hemisphere having a diameter of 4 mm and a height of 2 mm. It was applied to. Here, YAG phosphor was used as the phosphor, and the concentration was 3%. Moreover, silicone resin was used for transparent resin. Furthermore, the viscosity was adjusted by adding silica at a concentration of 2% so that the phosphor in the transparent resin would not spontaneously settle. Here, even if the transparent resin tries to go outside the circular region having a diameter of 4 mm, the transparent resin is repelled by the squirting agent applied to the substrate, so that it becomes a good hemisphere (Step 3).

  Next, as shown in FIG. 18, the phosphor is electrophoresed by applying a voltage so that the first electrode 12 and the second electrode 13 are positive, and the third electrode 14 is negative. Thus, the wavelength conversion layer 17 was formed with a uniform thickness around the LED chip 15 (Step 4). Here, the applied voltage was 1000 V, and the application time was 5 minutes. In addition, two voltage application points are the connection portions of the electrodes formed on the upper and lower ends of the LED package array. In this example, the wavelength conversion layer 17 having a thickness of 0.5 mm could be formed along the outer periphery of the LED chip 15.

Next, as shown in FIG. 20, the LED package array was put into an oven, and the transparent resin layer 63 was heated and cured. Here, the oven was set to a temperature of 150 degrees and a heating time of 5 hours.
As described above, the manufactured LED package array 50 was divided into pieces by dividing along the grooves CL on the substrate, and the LED package 10 was obtained.

  As a result of measuring the chromaticity variation of these LED packages 10, good results were obtained with a chromaticity X of the CIE color system of ± 2/1000 and a chromaticity Y of ± 5/1000.

Comparative example

Below, the comparative example of this invention is demonstrated in detail.
As a difference from the second embodiment, in Step 3, the phosphor resin 62, which is a mixture of only the phosphor and the transparent resin with stirring, is added to the center of the LED package without adding silica, and the phosphor resin 62 is 4mm in diameter and 2mm in height. It applied so that it might become a hemisphere.

  In the next Step 4, the wavelength conversion layer 17 was formed by leaving the phosphors to settle naturally without applying a voltage between the first electrode 12, the second electrode 13, and the third electrode 14. Here, the standing time was 2 hours. In this comparative example, the wavelength conversion layer 17 having a thickness of 0.2 mm could be formed along the substrate surface and the outer periphery of the LED chip 15.

  In Step 5, the LED package array was put into an oven, and the transparent resin layer 63 was cured by heating. Here, the oven was set to a temperature of 150 degrees and a heating time of 5 hours.

  As described above, the manufactured LED package array 50 was divided into pieces by dividing along the grooves CL on the substrate, and the LED package 10 was obtained.

  As a result of measuring the chromaticity variation of these LED packages 10, the chromaticity variation was larger than that of Example 1 as ± 4/1000 in chromaticity X and ± 15/1000 in chromaticity Y of the CIE color system. . Furthermore, when comparing the average chromaticity, the chromaticity Y of the comparative example 1 was about 20/1000 lower than that of the example 1, and the color was bluish. This is because in the comparative example, the wavelength conversion layer formed around the LED chip is thinner than the example because the wavelength conversion layer is also formed on the substrate surface. In order to achieve the same chromaticity as 2, it is necessary to increase the phosphor concentration in the phosphor resin. However, when the phosphor concentration is increased, the viscosity of the phosphor resin increases, and the natural sedimentation time in Step 4 becomes longer, resulting in poor productivity. Naturally, in order to increase the phosphor concentration, the amount of phosphor used must be increased, which increases the cost of the LED package.

  In addition, the said embodiment disclosed this time is an illustration in all the points, Comprising: It is not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and includes all modifications within the scope and meaning equivalent to the terms of the claims.

  11 Substrate, 12 First electrode, 12a, 13a Arc part, 12b, 13b, 14b, 14e, 14f Lead part, 12c, 13c, 14a Mounting part, 12d, 13d, 14c, 51, 52, 72 Connection part, 12e, 13e Back part, 13 2nd electrode, 14 3rd electrode, 14d Annular part, 15 LED chip, 16a, 16b Gold wire, 17 Wavelength conversion layer, 18 Sealing layer, 20, 21 Main surface, 22-25 Side part, 26 Main body, 26a Light emitting layer, 27 Reflector, 28 Anode, 29 Cathode, 30 Die bond agent, 31 Liquid repellent film, 35 um thickness, 40, 41, 42, 44, 45, 46, 47, 74-77 Connection wiring, 43, 48, 73 Base, 50 package array, 60 mother substrate, 61a to 61f formation region, 62 phosphor resin, 63 transparent resin layer, 70, First through hole, 80 wiring sheet, 81 copper wire.

Claims (20)

A substrate including a first main surface and a second main surface arranged in a thickness direction;
A light emitting element that includes an anode and a cathode, is provided on the first main surface, emits light in a first wavelength range, and covers the light emitting element, and is excited by the light in the first wavelength range; A wavelength conversion layer that emits light in two wavelength ranges;
A sealing layer formed to cover the wavelength conversion layer;
A first electrode connected to the anode and provided on the first main surface;
A second electrode connected to the cathode and provided on the first main surface;
A third electrode in which the first electrode and the second electrode are not electrically connected;
With
A light emitting package in which at least a part of the first electrode, at least a part of the second electrode, at least a part of the third electrode, and the light emitting element are covered with the sealing layer.   The light emitting package according to claim 1, wherein the light emitting element is mounted on at least one of the first electrode, the second electrode, and the third electrode.   3. The light emitting package according to claim 2, wherein among the first electrode, the second electrode, and the third electrode, an electrode on which the light emitting element is not mounted is disposed so as to surround the periphery of the light emitting element. . The light emitting element is mounted on the third electrode,
The light emitting package according to claim 3, wherein the first electrode and the second electrode are provided so as to surround the periphery of the light emitting element.   5. The light emitting package according to claim 4, wherein the third electrode includes a mounting portion on which the light emitting element is mounted and a connection portion connected to the mounting portion and reaching the second main surface from the first main surface. . The light emitting element is mounted so as to straddle the first electrode and the second electrode,
The light emitting package according to any one of claims 1 to 3, wherein the third electrode is provided so as to surround the light emitting element in a ring shape.   The light emitting package according to claim 1, wherein the light emitting element includes a reflective portion provided on a mounting surface. The light emitting element is mounted on at least one of the first electrode, the second electrode, and the third electrode,
The electrode on which the light emitting element is mounted is formed of a highly reflective metal,
The light emission according to any one of claims 1 to 7, wherein a reflectance of light in the first wavelength region of the high reflectance metal is higher than a reflectance of gold reflecting light in the first wavelength region. package.   The light emitting package according to claim 1, wherein the light emitting element is an LED chip.   The wavelength conversion layer is formed in a hemispherical shape with the light emitting element as a center, and the sealing layer is formed in a hemispherical shape with the light emitting element as a center. The light emitting package described. A substrate including a plurality of first main surfaces and second main surfaces arranged in the thickness direction;
A light emitting element including an anode and a cathode, provided on the first main surface, and emitting light in a first wavelength range;
A first electrode to which the anode is connected;
A second electrode to which the cathode is connected;
A third electrode on which the light emitting element is mounted without being electrically connected to the first electrode and the second electrode;
A fourth electrode not electrically connected to the first electrode, the second electrode, and the third electrode;
A wavelength conversion layer that is formed so as to cover the light emitting element and absorbs light in the first wavelength range and emits light in the second wavelength range;
A sealing layer formed to cover at least a part of the third electrode and at least a part of the fourth electrode;
A light emitting package comprising:   The light emitting package according to claim 11, wherein the third electrode includes a mounting part on which the light emitting element is mounted. A light emitting package array in which a plurality of light emitting packages according to any one of claims 1 to 12 are connected,
The first electrodes provided in each light emitting package are connected to each other,
The second electrodes provided in each light emitting package are connected to each other,
A third electrode provided in each light emitting package is a light emitting package array connected to each other. The third electrode includes a mounting portion on which the light emitting element is mounted,
A plurality of first connection wires for connecting the first electrodes and connecting the second electrodes;
A plurality of second connection wirings connecting the mounting parts;
Further comprising
The light emitting package array according to claim 13, wherein the first connection wiring and the second connection wiring are alternately arranged. Including a first main surface and a second main surface arranged in a thickness direction, wherein a first electrode, a second electrode, and a third electrode are provided on the first main surface to prepare a substrate;
Mounting a light emitting element on the first main surface;
A phosphor resin in which a phosphor is mixed with a transparent resin so as to cover at least a part of the first electrode, at least a part of the second electrode, at least a part of the third electrode, and the light emitting element. A step of applying
A step of electrically moving the phosphor by an electric field formed by applying a voltage between at least one of the first electrode and the second electrode and the third electrode after forming the phosphor resin; When,
A method for manufacturing a light emitting package, comprising:   The method of manufacturing a light emitting package according to claim 15, wherein the light emitting element is mounted on the third electrode.   The method of manufacturing a light emitting package according to claim 15, wherein the light emitting element is mounted across the first electrode and the second electrode. A step of forming a liquid repellent film on the first main surface;
The liquid repellent film is mounted with the light emitting element among at least a part of the first electrode, at least a part of the second electrode, at least a part of the third electrode, and the first main surface. The method of manufacturing a light emitting package according to claim 15, wherein the light emitting package is formed so as to expose a portion to be exposed.   The method for manufacturing a light emitting package according to any one of claims 15 to 18, wherein the phosphor resin is formed of the phosphor, silica, and a transparent resin. Including a first main surface and a second main surface arranged in a thickness direction, wherein a first electrode, a second electrode, a third electrode, and a fourth electrode are provided on the first main surface to prepare a substrate;
Mounting a light emitting element on the fourth electrode;
Connecting the first electrode and the light emitting element;
Mounting the second electrode and the light emitting element;
Forming a phosphor resin in which a phosphor is mixed with a transparent resin so as to cover at least a part of the third electrode, at least a part of the fourth electrode, and the light emitting element;
A step of electrically moving the phosphor in an electric field formed by applying a voltage to the third electrode and the fourth electrode after forming the phosphor resin;
A method for manufacturing a light emitting package, comprising: