JP2013106007A - Stage device, exposure equipment and device manufacturing method - Google Patents

Stage device, exposure equipment and device manufacturing method Download PDF

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JP2013106007A
JP2013106007A JP2011251019A JP2011251019A JP2013106007A JP 2013106007 A JP2013106007 A JP 2013106007A JP 2011251019 A JP2011251019 A JP 2011251019A JP 2011251019 A JP2011251019 A JP 2011251019A JP 2013106007 A JP2013106007 A JP 2013106007A
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substrate
adjustment
substrate holding
unit
state
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JP5932305B2 (en
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Masahito Shigihara
雅人 鴫原
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Canon Inc
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Canon Inc
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Abstract

PROBLEM TO BE SOLVED: To provide a stage device which is advantageous for reduction of a residual stress in accordance with height adjustment of a substrate holding part.SOLUTION: A stage device includes: a substrate; a substrate holding part which holds the substrate; and at least one support part which is installed on the substrate to support the substrate holding part so that a position of the substrate holding part can be changed. Each of the at least one support part includes: one first adjustment part; a plurality of second adjustment parts; and a control part. The first adjustment part has: one end fixed on the substrate; and the other end fixed to the substrate holding part, and can adjust a position of the other end. The second adjustment parts have: one ends fixed on the substrate; and the other ends which can be switched to a first state of being connected to the substrate holding part and a second state without being connected to the substrate holding part, and can independently adjust the positions of the other ends. The control part performs control so that all the connection states of the other ends of the plurality of second adjustment parts become the second state while the position of at least one of the other ends of the plurality of second adjustment parts and the first adjustment part is adjusted.

Description

本発明は、ステージ装置、露光装置及びデバイス製造方法に関する。   The present invention relates to a stage apparatus, an exposure apparatus, and a device manufacturing method.

液晶表示素子、半導体素子は、マスク上に形成されたパターンをガラスプレートやウエハといった基板上に転写するフォトリソグラフィの手法により製造される。このフォトリソグラフィ工程で使用される露光装置は、基板を載置して移動する基板ステージとパターンを有するマスクを載置して移動するマスクステージとを有する。この露光装置は、マスクステージ及び基板ステージを逐次移動しながら投影光学系を介してマスク上に形成されたパターンを基板に投影して転写する。転写精度を保つために、基板の上面の平面度を小さくする必要があり、そのために、構成部品単品の高精度加工や組み立て時の高さ調整が実施されている。
構成部品単品の加工に関しては、実使用時と同じ応力条件を再現した状態で加工することで、目標とする平面度を実現する。また高さ調整に関しては、露光装置内に微調整可能な調整機構を設けてミクロンオーダーで高さを調整して所定の平面度を実現する。調整機構は、基板を保持する基板保持部と基板保持部を支持する支持部との間に構成されている。基板保持部の上面全面は、その調整機構をZ方向に駆動させることで、理想の平面度になる。
基板保持部上面の平面度を調整する従来技術について説明する。特許文献1には、高さを調整できる機構を備えた基板ステージ装置が開示されている。この基板ステージ装置は、基板保持部の下に高さ調整機構を水平方向に複数配置し、基板保持部上面の平面度を計測系と電気制御部を連動させて調整する。しかし、特許文献1は、基板保持部と高さ調整機構との固定に関して言及していない。したがって、特許文献1記載の基板ステージ装置では、基板保持部の高さを調整したときに基板ステージ装置の一部に残留応力が発生して基板保持部の平面度が経時変化を発生する懸念がある。また、特許文献2では、基板保持部と高さ調整機構との間に板バネを使用して応力を水平方向に逃がす方法が提案されているが、応力が残留することには変わり無く、経時変化の懸念が残る。
Liquid crystal display elements and semiconductor elements are manufactured by a photolithography technique in which a pattern formed on a mask is transferred onto a substrate such as a glass plate or a wafer. An exposure apparatus used in this photolithography process includes a substrate stage on which a substrate is moved and a mask stage on which a mask having a pattern is mounted and moved. This exposure apparatus projects and transfers a pattern formed on a mask onto a substrate via a projection optical system while sequentially moving the mask stage and the substrate stage. In order to maintain the transfer accuracy, it is necessary to reduce the flatness of the upper surface of the substrate. For this purpose, high-precision processing of individual component parts and height adjustment during assembly are performed.
Regarding the processing of individual component parts, the target flatness is realized by processing in the state where the same stress conditions as in actual use are reproduced. Regarding the height adjustment, an adjustment mechanism capable of fine adjustment is provided in the exposure apparatus to adjust the height on the micron order to achieve a predetermined flatness. The adjustment mechanism is configured between a substrate holding unit that holds the substrate and a support unit that supports the substrate holding unit. The entire upper surface of the substrate holding portion has an ideal flatness by driving the adjusting mechanism in the Z direction.
A conventional technique for adjusting the flatness of the upper surface of the substrate holder will be described. Patent Document 1 discloses a substrate stage apparatus having a mechanism capable of adjusting the height. In this substrate stage apparatus, a plurality of height adjusting mechanisms are arranged in the horizontal direction under the substrate holding unit, and the flatness of the upper surface of the substrate holding unit is adjusted in conjunction with the measurement system and the electric control unit. However, Patent Document 1 does not mention fixing the substrate holding unit and the height adjusting mechanism. Therefore, in the substrate stage apparatus described in Patent Document 1, there is a concern that when the height of the substrate holding part is adjusted, residual stress is generated in a part of the substrate stage apparatus, and the flatness of the substrate holding part changes over time. is there. Patent Document 2 proposes a method of releasing stress in the horizontal direction by using a leaf spring between the substrate holding portion and the height adjusting mechanism. There remains concern about change.

特開2009-218372号公報JP 2009-218372 A 特開2004-165582号公報JP 2004-165582 A

以上のように、これまでの基板保持部上面の平面度を調整可能なステージ装置では、基板保持部と高さ調整機構との間に残留応力が発生してしまう構造となっており、基板上面の平面度が経時的変化を起こしてしまう。その結果、基板不良に伴う損失を招く。   As described above, the conventional stage apparatus that can adjust the flatness of the upper surface of the substrate holding unit has a structure in which residual stress is generated between the substrate holding unit and the height adjustment mechanism. The flatness of the film will change over time. As a result, a loss due to a substrate defect is caused.

本発明は、上述した問題を解決するためになされたものであって、基板保持部の高さ調整に伴う残留応力の低減に有利なステージ装置を提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a stage apparatus that is advantageous in reducing the residual stress accompanying the height adjustment of the substrate holder.

上記目的を達成するために、本発明は、基板を保持して前記基板の表面に直交する方向に移動可能なステージ装置であって、基盤と、前記基板を保持する基板保持部と、前記基盤上に設置され前記基板保持部の前記方向における位置を変更可能に前記基板保持部を支持する少なくとも1つの支持部と、を備え、前記少なくとも1つの支持部のそれぞれは、前記基盤上に固定された一端部と前記基板保持部に固定された他端部とを有し、該他端部の前記方向における位置を調整可能な1つの第1調整部と、前記基盤上に固定された一端部と、前記基板保持部と結合している第1状態と前記基板保持部と結合していない第2状態とに切り替え可能な他端部とをそれぞれ有し、該他端部の前記方向における位置を個別に調整可能な複数の第2調整部と、前記複数の第2調整部及び前記第1調整部の少なくとも1つの他端部の前記方向における位置を調整する間、前記複数の第2調整部の他端部のすべての結合状態が前記第2状態となるように、前記第1調整部及び前記複数の第2調整部を制御する制御部と、を含むことを特徴とする。   In order to achieve the above object, the present invention provides a stage device that holds a substrate and is movable in a direction orthogonal to the surface of the substrate, the substrate, a substrate holding unit that holds the substrate, and the substrate And at least one support portion that supports the substrate holding portion so that the position of the substrate holding portion in the direction can be changed, and each of the at least one support portion is fixed on the base. A first adjusting portion that can adjust the position of the other end portion in the direction, and one end portion fixed on the base. And a second state that can be switched between a first state that is coupled to the substrate holding unit and a second state that is not coupled to the substrate holding unit, and the position of the other end in the direction Multiple second adjusters that can be adjusted individually While the positions of at least one other end of the plurality of second adjustment units and the first adjustment unit in the direction are adjusted, all the coupling states of the other end portions of the plurality of second adjustment units are the first A control unit that controls the first adjustment unit and the plurality of second adjustment units so as to be in two states.

本発明によれば、基板保持部の高さ調整に伴う残留応力の低減に有利なステージ装置を提供することを目的とする。   An object of the present invention is to provide a stage apparatus that is advantageous in reducing residual stress associated with height adjustment of a substrate holding portion.

露光装置を示す図Diagram showing exposure equipment 基板ステージを示す図Diagram showing substrate stage 基板ステージの駆動シーケンスを示す図Diagram showing substrate stage drive sequence 真空チャック機構を複数配置した例を示す図Diagram showing an example of multiple vacuum chuck mechanisms 真空チャック機構を示す図Diagram showing vacuum chuck mechanism 静電チャック機構を示す図Diagram showing electrostatic chuck mechanism 高さ調整機構を示す図Diagram showing the height adjustment mechanism

次に、本発明の実施形態について図を参照しながら説明する。   Next, embodiments of the present invention will be described with reference to the drawings.

まず、本発明のステージ装置を適用できる露光装置の説明をする。図1は、露光装置の全体構成を示す概念図である。投影光学系10を挟んで垂直方向の上側にマスクステージ20が配置され、下側に基板ステージ(ステージ装置)30が配置されている。これらマスクステージ20と基板ステージ30はそれぞれ個別に移動可能であり、これらの移動位置はともにレーザ干渉測長器50により計測制御可能である。   First, an exposure apparatus to which the stage apparatus of the present invention can be applied will be described. FIG. 1 is a conceptual diagram showing the overall configuration of the exposure apparatus. A mask stage 20 is disposed above the projection optical system 10 in the vertical direction, and a substrate stage (stage apparatus) 30 is disposed below. The mask stage 20 and the substrate stage 30 can be individually moved, and the movement positions of both the mask stage 20 and the substrate stage 30 can be measured and controlled by the laser interference length measuring device 50.

基板ステージ30は本体ベース31上に直交方向に配置されたYステージ32およびXステージ33を有する。Xステージ33上に個別に垂直方向に可変可能な支持足150を介してθZステージ34が搭載され、この上にXY面内でのθ回転機構120を配置し、さらにその上に基板保持部の基盤37および基板保持部35が基板サイズに合わせて各々1つ以上搭載される。基板保持部35は露光されるべき基板36を保持する。   The substrate stage 30 has a Y stage 32 and an X stage 33 arranged on the main body base 31 in the orthogonal direction. A θZ stage 34 is mounted on the X stage 33 via support legs 150 that can be individually varied in the vertical direction, and a θ rotation mechanism 120 in the XY plane is disposed thereon, and further a substrate holding unit is disposed thereon. One or more substrates 37 and substrate holders 35 are mounted in accordance with the substrate size. The substrate holding unit 35 holds the substrate 36 to be exposed.

基板36の保持方法について説明する。図1では図示しないが、基板保持部35にエア配管が構成されている。基板保持部35は、基板36の裏面を基板保持部35の上面に設けられた図示していない真空チャック機構により基板36を吸着保持したり脱着解放したりすることが可能である。基板保持部35が基板36を真空チャックすることによって、基板36は基板ステージ30によりX、YおよびZ方向に移動可能であると共にXY面内でも回転可能に支持されることになる。θZステージ34は、露光時、基板36の表面を投影光学系10の基板側焦点面に一致させる。なお、基板36もしくは基板保持部35の上面の平面度は、基盤上に設置され基板36の表面に直交する方向(鉛直方向)における基板保持部35の位置を変更可能に支持する少なくとも1つの支持部60により調整される。   A method for holding the substrate 36 will be described. Although not shown in FIG. 1, an air pipe is configured in the substrate holding portion 35. The substrate holding unit 35 can suck and hold the substrate 36 by a vacuum chuck mechanism (not shown) provided on the upper surface of the substrate holding unit 35 on the back surface of the substrate 36 and can be detached and released. When the substrate holding unit 35 vacuum chucks the substrate 36, the substrate 36 can be moved in the X, Y, and Z directions by the substrate stage 30, and is also rotatably supported in the XY plane. The θZ stage 34 causes the surface of the substrate 36 to coincide with the substrate-side focal plane of the projection optical system 10 during exposure. The flatness of the upper surface of the substrate 36 or the substrate holding unit 35 is at least one support that is installed on the base and supports the position of the substrate holding unit 35 in a direction orthogonal to the surface of the substrate 36 (vertical direction). It is adjusted by the unit 60.

マスクステージ20は、マスクステージ定盤21と、その上に配置されたXYθステージ22とを備え、この上に投影されるべきパタ−ンを有するマスク23が配置される。従って、マスク23はXおよびY方向に移動可能であると共にXY面内で回転可能に支持されることになる。マスクステージ20の上方には、マスク23と基板36の像を投影光学系10を介して観察できる観察光学系40が配置され、さらにその上方に照明光学系41が配置されている。   The mask stage 20 includes a mask stage surface plate 21 and an XYθ stage 22 disposed thereon, and a mask 23 having a pattern to be projected thereon is disposed. Therefore, the mask 23 can be moved in the X and Y directions and is supported rotatably in the XY plane. Above the mask stage 20, an observation optical system 40 capable of observing images of the mask 23 and the substrate 36 via the projection optical system 10 is disposed, and an illumination optical system 41 is disposed further above.

マスクステージ20および基板ステージ30は、共にレーザ干渉測長器50により位置計測される。レーザ干渉測長器50は、レ−ザヘッド51と、干渉ミラ−52,53と、θZステージ34に取り付けられた第1の反射ミラ−54と、マスクステージ定盤21に取り付けられた第2の反射ミラ−55とを有する。ここで、レーザ干渉測長器50のレーザビーム位置は、マスクステージ20については上下方向(投影光学系10の光軸方向)ではほぼ投影光学系10のマスク側焦点面に、水平面内ではほぼ投影光学系10の光軸位置に設定される。レーザ干渉測長器50のレーザビーム位置は、基板ステージ30についても水平面内ではほぼ投影光学系10の光軸位置に設定されて、上下方向で投影光学系10の基板側焦点面を通るように設定されている。   Both the mask stage 20 and the substrate stage 30 are position-measured by a laser interference length measuring device 50. The laser interference length measuring device 50 includes a laser head 51, interference mirrors 52 and 53, a first reflection mirror 54 attached to the θZ stage 34, and a second attachment attached to the mask stage surface plate 21. A reflection mirror 55. Here, the laser beam position of the laser interference length measuring device 50 is projected substantially on the mask-side focal plane of the projection optical system 10 in the vertical direction (in the optical axis direction of the projection optical system 10) with respect to the mask stage 20, and in the horizontal plane. The optical axis position of the optical system 10 is set. The laser beam position of the laser interferometer 50 is also set to the optical axis position of the projection optical system 10 in the horizontal plane for the substrate stage 30 and passes through the substrate-side focal plane of the projection optical system 10 in the vertical direction. Is set.

図2は本発明を適用した基板ステージ30の概略図を示す。なお、本実施形態は、1つの基板保持部35に対して1つの支持部60が構成されている状態を示す。支持部60は、複数の第2調整部63aと1つの第1調整部63b、第1調整部63b、第2調整部63aを制御する制御部とを含んでいる。制御部は、後述する演算制御部99とエア制御部64とを含んでいる。第1調整部63bは、その一端部が基盤37上に固定され、他端部62が基板保持部35の下面に固定され、他端部62の鉛直方向における位置を調整可能である。第1調整部63bは、基板保持部35の高さを調整するときに、基板保持部35が水平方向に変位することを抑制するために構成されており、基板保持部35と他端部62でボルトにより締結固定されている。第2調整部63aは、その一端部が基盤37上に固定され、他端部61が基板保持部35と結合する第1状態と結合していない第2状態とに切り替え可能で、しかも、他端部61の鉛直方向における位置を調整可能である。第2調整部63aは、図7に示すように、ピストン部121のピストン107を駆動させることで充鎮された非圧縮性流体がピストン部空間105からチューブ108をとおり本体部120の内部空間102に移動する。ピストン107の駆動によって内部空間102の非圧縮性流体の体積が変動した分だけダイヤフラム103が変形することで駆動部(他端部)101が上下に変位する。この第2調整部63aの「ピストン107の送り量に対する駆動部101の変位量」や「ストローク」といった仕様は以下のように決まる。   FIG. 2 is a schematic view of a substrate stage 30 to which the present invention is applied. This embodiment shows a state where one support portion 60 is configured for one substrate holding portion 35. The support unit 60 includes a plurality of second adjustment units 63a, a first adjustment unit 63b, a first adjustment unit 63b, and a control unit that controls the second adjustment unit 63a. The control unit includes an arithmetic control unit 99 and an air control unit 64 which will be described later. One end of the first adjustment unit 63b is fixed on the base 37, the other end 62 is fixed to the lower surface of the substrate holding unit 35, and the position of the other end 62 in the vertical direction can be adjusted. The first adjustment unit 63 b is configured to prevent the substrate holding unit 35 from being displaced in the horizontal direction when adjusting the height of the substrate holding unit 35, and includes the substrate holding unit 35 and the other end 62. It is fastened and fixed with bolts. The second adjusting portion 63a can be switched between a first state where one end portion is fixed on the base 37 and the other end portion 61 is coupled to the substrate holding portion 35 and a second state where the other end portion 61a is not coupled. The position of the end 61 in the vertical direction can be adjusted. As shown in FIG. 7, the second adjusting portion 63 a is configured so that the incompressible fluid filled by driving the piston 107 of the piston portion 121 passes from the piston portion space 105 through the tube 108 to the inner space 102 of the main body portion 120. Move to. As the volume of the incompressible fluid in the internal space 102 is changed by the drive of the piston 107, the diaphragm 103 is deformed, so that the drive unit (the other end) 101 is displaced vertically. Specifications such as “displacement amount of the drive unit 101 with respect to the feed amount of the piston 107” and “stroke” of the second adjustment unit 63a are determined as follows.

まず、ピストン107の送り量に対する駆動部101の変位量は、ダイヤフラム部102と駆動部101の断面積(紙面上方向にみた面)の和とピストン107の断面積(紙面左方向にみた面)の比で決まる。また、駆動部101のストロークは、ピストン107のストロークとピストン107の送り量に対する駆動部101の変位量との積となる。そのため、駆動部101を高精度に位置決めしようとするとピストン107の断面積が小さくなる。ダイヤフラム103の面積とピストン部121の面積の比率を変えることで第1〜第2調整部63a,63bの位置決め精度を決定することが可能である。また、第2調整部63a,63bの他端部の上面は、ダイヤフラム103により自由に傾く構造となっている。例えば、他端部61に配置されている真空チャック機構が斜めに傾いた場合、第2調整部63bの上面はその角度分だけ傾き、下面は基盤37の上面に倣うことになる。   First, the displacement amount of the drive unit 101 with respect to the feed amount of the piston 107 is the sum of the cross-sectional areas of the diaphragm unit 102 and the drive unit 101 (surface viewed from the top of the paper) and the cross-sectional area of the piston 107 (surface viewed from the left of the paper). It is determined by the ratio. The stroke of the drive unit 101 is the product of the stroke of the piston 107 and the displacement amount of the drive unit 101 with respect to the feed amount of the piston 107. Therefore, when the drive unit 101 is positioned with high accuracy, the cross-sectional area of the piston 107 is reduced. By changing the ratio of the area of the diaphragm 103 and the area of the piston part 121, it is possible to determine the positioning accuracy of the first to second adjusting parts 63a and 63b. Further, the upper surfaces of the other end portions of the second adjusting portions 63 a and 63 b are structured to be freely inclined by the diaphragm 103. For example, when the vacuum chuck mechanism disposed at the other end portion 61 is inclined, the upper surface of the second adjustment portion 63 b is inclined by the angle, and the lower surface follows the upper surface of the base 37.

本実施の形態はこれに限らず基板保持部35および基盤37の大きさ、形状、各構成部品の員数により任意にそれぞれの機構を任意の数だけ配置することが可能である。
第2調整部63bの他端部61に設置され第2調整部63bを基板保持部35と結合可能とする真空チャック機構は、エア配管65を介してエア制御部64に接続されている。また同様に、基板保持部35は別系統のエア配管66を介してエア制御部64に接続されている。第1〜第2調整部63a,63bの高さ調整機構63は、駆動部67と接続されている。更に基板36もしくは基板保持部35の上面の高さ位置を計測する計測器68は、基板保持部35の上方に配置されている。エア制御部64、駆動部67、計測器68は、演算制御部99と接続されており、計測器68の計測結果に基づいて高さ調整機構の調整量の制御を行うことが出来る。なお、図示した計測器68は、支持部60によって支持される箇所のそれぞれにおける、基板保持部35もしくは基板36上面の位置計測出来るものであれば良く、調整に要求される精度に合わせて、員数、配置ピッチを自由に変えることが出来る。
The present embodiment is not limited to this, and any number of mechanisms can be arranged arbitrarily according to the size and shape of the substrate holding part 35 and the base 37 and the number of components.
A vacuum chuck mechanism installed at the other end portion 61 of the second adjustment portion 63 b and capable of coupling the second adjustment portion 63 b to the substrate holding portion 35 is connected to the air control portion 64 via the air pipe 65. Similarly, the substrate holding unit 35 is connected to the air control unit 64 via an air pipe 66 of another system. The height adjustment mechanism 63 of the first to second adjustment units 63 a and 63 b is connected to the drive unit 67. Further, a measuring instrument 68 that measures the height position of the upper surface of the substrate 36 or the substrate holding unit 35 is disposed above the substrate holding unit 35. The air control unit 64, the drive unit 67, and the measuring device 68 are connected to the calculation control unit 99 and can control the adjustment amount of the height adjustment mechanism based on the measurement result of the measuring device 68. The measuring instrument 68 shown in the figure is only required to be able to measure the position of the upper surface of the substrate holding unit 35 or the substrate 36 at each of the locations supported by the support unit 60. The arrangement pitch can be changed freely.

図3は、基板36上面の高さ調整を行う場合の、計測から高さ調整までの流れを示す。なお、基板保持部35、第2調整部63aの他端部61の真空チャック機構、第1〜第2調整部63a,63bの高さ調整機構に接続されるそれぞれの配管やケーブルは図示していない。まず、装置の組立時もしくはメンテナンス時を想定して、初期状態は基板36が傾いた状態とする(状態a)。この状態aでは、第2調整部63bの真空チャック機構は基板保持部35の裏面を吸着状態(第1状態)で固定している。計測器68は、基板保持部35に載置された基板36の上面を複数点計測し、得られた高さ位置情報は、図示していない演算制御部99へ取り込まれる。   FIG. 3 shows a flow from measurement to height adjustment when the height of the upper surface of the substrate 36 is adjusted. In addition, each piping and cable connected to the substrate holding part 35, the vacuum chuck mechanism of the other end part 61 of the second adjustment part 63a, and the height adjustment mechanism of the first to second adjustment parts 63a and 63b are illustrated. Absent. First, assuming that the apparatus is being assembled or maintained, the initial state is that the substrate 36 is tilted (state a). In this state a, the vacuum chuck mechanism of the second adjustment unit 63b fixes the back surface of the substrate holding unit 35 in the suction state (first state). The measuring device 68 measures a plurality of points on the upper surface of the substrate 36 placed on the substrate holding unit 35, and the obtained height position information is taken into the calculation control unit 99 (not shown).

次に、調整前の工程として、演算制御部99からの指令により第2調整部63aの真空チャック機構を大気開放状態(第2状態)に切り替える(状態b)。すなわち、基板保持部35は第1調整部63bの他端部62の1点のみで水平方向および垂直方向を固定した状態となる。なお、第1調整部63bの他端部62を支点に基板保持部35は傾くことができる。   Next, as a step before adjustment, the vacuum chuck mechanism of the second adjustment unit 63a is switched to the atmospheric release state (second state) according to a command from the arithmetic control unit 99 (state b). That is, the substrate holding unit 35 is in a state where the horizontal direction and the vertical direction are fixed only at one point of the other end 62 of the first adjustment unit 63b. In addition, the board | substrate holding | maintenance part 35 can incline on the other end part 62 of the 1st adjustment part 63b as a fulcrum.

続いて、指令値は演算制御部99から駆動部67に送られ、第2調整部63aの他端部61を基板保持部35と結合しない状態に維持しながら第1〜第2調整部63a,63bの高さ調整機構を連動して駆動させることができる。よって目的の位置へ基板保持部35をZ変位させることになる(状態c)。ここで、基板保持部35と第2調整部63aの他端部61の真空チャック機構との間は結合状態ではないため、基板保持部35にはZ変位するためだけの力が加わることとなる。すなわち、基板保持部35には、過度な応力が負荷されない。   Subsequently, the command value is sent from the calculation control unit 99 to the driving unit 67, and the first to second adjustment units 63a, 63a, The height adjusting mechanism 63b can be driven in conjunction. Therefore, the substrate holding part 35 is Z-displaced to the target position (state c). Here, since the substrate holding portion 35 and the vacuum chuck mechanism at the other end portion 61 of the second adjustment portion 63a are not in a coupled state, the substrate holding portion 35 is applied with a force only for Z displacement. . That is, excessive stress is not applied to the substrate holding part 35.

第1〜第2調整部63a,63bによる高さ調整の終了後に、第2調整部63aの真空チャック機構を結合状態に切り替えて、基板保持部35を固定する(状態d)。なお、真空チャックによる固定の瞬間に基板保持部35がずれても、繰り返し動作を実施することで修正することが出来る。以上のように、計測から高さ調整までを繰り返し実施することで、基板36の上面の位置を目標とする位置まで変位させることが可能である。例えば図4に示すように、基板保持部35に対して1つの支持部60の5点の第1〜第2調整部63a,63bにより支持し、その基板保持部35を水平方向に12個配置するなどして、大型基板36の平面度を追い込むことも可能である。   After the height adjustment by the first to second adjustment units 63a and 63b is completed, the vacuum chuck mechanism of the second adjustment unit 63a is switched to the coupled state, and the substrate holding unit 35 is fixed (state d). Even if the substrate holding portion 35 is displaced at the moment of fixing by the vacuum chuck, it can be corrected by repeatedly performing the operation. As described above, by repeatedly performing from measurement to height adjustment, the position of the upper surface of the substrate 36 can be displaced to a target position. For example, as shown in FIG. 4, the substrate holding portion 35 is supported by five first to second adjustment portions 63a and 63b of one supporting portion 60, and 12 substrate holding portions 35 are arranged in the horizontal direction. For example, the flatness of the large substrate 36 can be driven.

図5には、第2調整部63aの真空チャック機構の機能を適用できる形態を示す。真空チャック機構におけるエア吸着領域は、円形に一段掘られた吸着溝70の領域である。この吸着溝への吸着エア供給は、図示しない配管系統からエア吸着穴71に接続され、吸着溝面穴71aから吸着溝70へ実施される。四隅のザグリ穴72は下部に構成される高さ調整機構との締結に使用するために用意されている。 あくまで一例を挙げたが、装置拡大により大幅な吸着力確保が必要となれば吸着溝の面積を広くする方法もしくは磁石を利用した方法がある。   FIG. 5 shows a form to which the function of the vacuum chuck mechanism of the second adjustment unit 63a can be applied. The air suction area in the vacuum chuck mechanism is an area of the suction groove 70 dug in a circular shape. The suction air supply to the suction groove is connected to the air suction hole 71 from a piping system (not shown), and is performed from the suction groove surface hole 71a to the suction groove 70. The counterbored holes 72 at the four corners are prepared for use in fastening with a height adjusting mechanism formed in the lower part. An example has been given to the last, but there is a method of widening the area of the suction groove or a method using a magnet if it is necessary to secure a large suction force by expanding the apparatus.

図6には、基板ステージ30の駆動加速度が増大した場合などに対して、基板保持部35の保持力をさらに多く確保するための態様を示す。図6の態様では、高さ調整機構の上面に2つのマグネット80と真空チャック機構を有する他端部61とを構成し、上部に位置する基板保持部35下面にマグネット受け81を2つ構成したマグネット受けベース82がそれぞれ締結固定されている。マグネット受け81の材料は、マグネット80と互いに吸引し合う軟磁性材料もしくは硬磁性材料である。マグネット80とマグネット受け81とで静電チャック機構を構成している。   FIG. 6 shows a mode for securing a larger holding force of the substrate holding unit 35 when the driving acceleration of the substrate stage 30 is increased. In the embodiment of FIG. 6, two magnets 80 and the other end 61 having a vacuum chuck mechanism are configured on the upper surface of the height adjusting mechanism, and two magnet receivers 81 are configured on the lower surface of the substrate holding unit 35 positioned at the upper part. Magnet receiving bases 82 are fastened and fixed respectively. The material of the magnet receiver 81 is a soft magnetic material or a hard magnetic material that attracts the magnet 80 to each other. The magnet 80 and the magnet receiver 81 constitute an electrostatic chuck mechanism.

真空チャック状態では、真空チャック機構の上面とマグネット受けベース82の下面が接触面83として接触することとなる。このとき、両側に構成されたマグネット80と、それぞれの上下で向かい合うマグネット受け81との間で吸引力が働き、基板保持部35の保持力となる。吸引力は、マグネット80とマグネット受け81との間隙を調整することで任意で変化させることが出来る。そのため、基板ステージ30の駆動条件に合わせて最適な吸引力を得ることが可能となる。また、高さ調整時には、真空チャック機構に繋がれたエア配管系統からエアブローする。そのため、接触面83の領域が非接触状態となり、基板保持部35の高さ調整による残留応力発生を抑えることが可能となる。   In the vacuum chuck state, the upper surface of the vacuum chuck mechanism and the lower surface of the magnet receiving base 82 come into contact as the contact surface 83. At this time, an attractive force acts between the magnets 80 formed on both sides and the magnet receivers 81 facing each other at the top and bottom, and becomes a holding force of the substrate holding part 35. The attractive force can be arbitrarily changed by adjusting the gap between the magnet 80 and the magnet receiver 81. Therefore, it is possible to obtain an optimum suction force according to the driving conditions of the substrate stage 30. When adjusting the height, air is blown from an air piping system connected to a vacuum chuck mechanism. Therefore, the region of the contact surface 83 is in a non-contact state, and it is possible to suppress the occurrence of residual stress due to the height adjustment of the substrate holding part 35.

[デバイス製造方法]
次に、デバイス(半導体デバイス、液晶表示デバイス等)の製造方法について説明する。半導体デバイスは、ウエハに集積回路を作る前工程と、前工程で作られたウエハ上の集積回路チップを製品として完成させる後工程を経ることにより製造される。前工程は、前述の露光装置を使用して感光剤が塗布されたウエハを露光する工程と、ウエハを現像する工程を含む。後工程は、アッセンブリ工程(ダイシング、ボンディング)と、パッケージング工程(封入)を含む。液晶表示デバイスは、透明電極を形成する工程を経ることにより製造される。透明電極を形成する工程は、透明導電膜が蒸着されたガラス基板に感光剤を塗布する工程と、前述の露光装置を使用して感光剤が塗布されたガラス基板を露光する工程と、ガラス基板を現像する工程を含む。本実施形態のデバイス製造方法によれば、従来よりも高品位のデバイスを製造することができる。以上、本発明の好ましい実施形態について説明したが、本発明はこれらの実施形態に限定されず、その要旨の範囲内で種々の変形および変更が可能である。
[Device manufacturing method]
Next, a method for manufacturing a device (semiconductor device, liquid crystal display device, etc.) will be described. A semiconductor device is manufactured through a pre-process for producing an integrated circuit on a wafer and a post-process for completing an integrated circuit chip on the wafer produced in the pre-process as a product. The pre-process includes a step of exposing the wafer coated with the photosensitive agent using the above-described exposure apparatus, and a step of developing the wafer. The post-process includes an assembly process (dicing and bonding) and a packaging process (encapsulation). A liquid crystal display device is manufactured through a process of forming a transparent electrode. The step of forming the transparent electrode includes a step of applying a photosensitive agent to a glass substrate on which a transparent conductive film is deposited, a step of exposing the glass substrate on which the photosensitive agent is applied using the above-described exposure apparatus, and a glass substrate. The process of developing is included. According to the device manufacturing method of the present embodiment, it is possible to manufacture a higher quality device than before. As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

以上、本発明の好ましい実施形態について説明したが、本発明はこれらの実施形態に限定されず、その要旨の範囲内で種々の変形および変更が可能である。   As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

Claims (5)

基板を保持して前記基板の表面に直交する方向に移動可能なステージ装置であって、
基盤と、
前記基板を保持する基板保持部と、
前記基盤上に設置され前記基板保持部の前記方向における位置を変更可能に前記基板保持部を支持する少なくとも1つの支持部と、
を備え、
前記少なくとも1つの支持部のそれぞれは、
前記基盤上に固定された一端部と前記基板保持部に固定された他端部とを有し、該他端部の前記方向における位置を調整可能な1つの第1調整部と、
前記基盤上に固定された一端部と、前記基板保持部と結合している第1状態と前記基板保持部と結合していない第2状態とに切り替え可能な他端部とをそれぞれ有し、該他端部の前記方向における位置を個別に調整可能な複数の第2調整部と、
前記複数の第2調整部及び前記第1調整部の少なくとも1つの他端部の前記方向における位置を調整する間、前記複数の第2調整部の他端部のすべての結合状態が前記第2状態となるように、前記第1調整部及び前記複数の第2調整部を制御する制御部と、
を含むことを特徴とするステージ装置。
A stage device that holds a substrate and is movable in a direction perpendicular to the surface of the substrate,
The foundation,
A substrate holder for holding the substrate;
At least one support unit that is installed on the base and supports the substrate holding unit so that the position of the substrate holding unit in the direction can be changed;
With
Each of the at least one support is
One first adjustment portion having one end portion fixed on the base and the other end portion fixed to the substrate holding portion, the position of the other end portion being adjustable in the direction;
One end fixed on the base, and the other end that can be switched between a first state coupled to the substrate holder and a second state not coupled to the substrate holder, A plurality of second adjustment units capable of individually adjusting the position of the other end in the direction;
While adjusting the position in the direction of at least one other end of the plurality of second adjustment units and the first adjustment unit, all the coupling states of the other end portions of the plurality of second adjustment units are the second. A control unit for controlling the first adjustment unit and the plurality of second adjustment units so as to be in a state;
The stage apparatus characterized by including.
各第2調整部は、その他端部を前記基板保持部と結合可能にする真空チャック機構及び静電チャック機構の少なくともいずれかを含むことを特徴とする請求項1に記載のステージ装置。   2. The stage apparatus according to claim 1, wherein each second adjustment unit includes at least one of a vacuum chuck mechanism and an electrostatic chuck mechanism that allow other end portions to be coupled to the substrate holding unit. 前記基板保持部が前記少なくとも1つの支持部によって支持される箇所のそれぞれにおいて、前記基板保持部の上面又は該基板保持部によって保持される基板の上面の前記方向における位置を計測する計測器をさらに備え、
前記制御部は、前記計測器の計測結果に基づいて前記第1調整部及び前記各第2調整部の他端部それぞれの前記方向における位置の調整量を決定し、前記複数の第2調整部の他端部の結合状態を前記第2状態に維持しながら前記第1調整部及び前記複数の第2調整部の他端部それぞれの前記方向における位置を前記決定された調整量だけ調整し、当該調整の終了後に前記複数の第2調整部の他端部すべての結合状態を前記第1状態に切り替えることを特徴とする請求項1又は請求項2に記載のステージ装置。
A measuring instrument that measures the position of the upper surface of the substrate holding unit or the upper surface of the substrate held by the substrate holding unit in each of the locations where the substrate holding unit is supported by the at least one supporting unit in the direction; Prepared,
The control unit determines an adjustment amount of a position in the direction of each of the other ends of the first adjustment unit and the second adjustment units based on a measurement result of the measuring instrument, and the plurality of second adjustment units Adjusting the position in the direction of each of the other ends of the first adjustment unit and the plurality of second adjustment units by the determined adjustment amount while maintaining the coupling state of the other end of the second adjustment unit in the second state, 3. The stage apparatus according to claim 1, wherein after completion of the adjustment, the coupling state of all the other end portions of the plurality of second adjustment units is switched to the first state.
基板を露光する露光装置であって、
前記基板は請求項1乃至請求項3のいずれか1項に記載のステージ装置により保持されることを特徴とする露光装置。
An exposure apparatus for exposing a substrate,
An exposure apparatus, wherein the substrate is held by the stage apparatus according to any one of claims 1 to 3.
デバイスを製造する方法であって、
請求項4に記載の露光装置を用いて基板を露光する工程と、
前記工程で露光された基板を現像する工程と、
を含むことを特徴とする方法。
A method of manufacturing a device comprising:
A step of exposing the substrate using the exposure apparatus according to claim 4;
Developing the substrate exposed in the step;
A method comprising the steps of:
JP2011251019A 2011-11-16 2011-11-16 Stage apparatus, exposure apparatus, and device manufacturing method Expired - Fee Related JP5932305B2 (en)

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