JP2013105895A - Thin film transistor device, manufacturing method of the same, organic el display element and organic el display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film transistor device which achieves high quality by inhibiting formation of an organic semiconductor layer in an unintended region in formation of the organic semiconductor layer, and by inhibiting mixture of inks between neighboring openings; provide a manufacturing method of the thin film transistor device; and provide an organic EL display element and an organic EL display device.SOLUTION: A thin film transistor device comprises: a barrier 1016 in which three openings 1016a, 1016b, 1016c are opened; and source electrodes 1014a, 1014b and drain electrodes 1014c, 1014d which are exposed on respective bottoms of the openings 1016b, 1016c, and which function as channel parts, respectively. Lateral faces 1016d, 1016e among lateral faces facing the opening 1016b are relatively steeper inclined planes compared with a lateral face 1016i. A lateral face 1016f among lateral faces facing the opening 1016c is a relatively steeper inclined plane compared with a lateral face 1016j.

Description

  The present invention relates to a thin film transistor device and a manufacturing method thereof, an organic EL display element, and an organic EL display device.

In a liquid crystal display panel and an organic EL display panel, a thin film transistor device in which a thin film transistor (TFT) element is formed for each subpixel is employed in order to control light emission in units of subpixels. In particular, development of a thin film transistor device using an organic semiconductor material as a semiconductor layer is underway.
As shown in FIG. 18A, an organic TFT device according to the prior art includes, for example, a gate electrode 9012a, 9012b, an insulating layer 9013, source electrodes 9014a, 9014b, and a drain electrode (not shown) on a substrate 9011. Organic semiconductor layers 9017a and 9017b are sequentially stacked. The organic semiconductor layers 9017a and 9017b are formed on the insulating layer 9013 by applying and drying an organic semiconductor ink so as to fill the space between the source electrodes 9014a and 9014b and the drain electrode and to cover them. Is formed.

  As shown in FIG. 18A, a partition wall 9016 is provided on the insulating layer 9013 to partition between the organic semiconductor layers 9017a and 9017b in the adjacent thin film transistor elements. A plurality of openings 9016a to 9016c are opened in the partition wall 9016. A connection wiring 9015 connected to the drain electrode is exposed at the bottom of the opening 9016a, and an organic semiconductor layer is formed. Absent. The connection wiring 9015 is an electrode for connecting an electrode of a light emitting element formed above the organic TFT device. In addition, organic semiconductor layers 9017 a and 9017 b partitioned from each other are formed in the openings 9016 b and 9016 c of the partition wall 9016.

  A TFT element used in a liquid crystal display panel or an organic EL display panel performs light emission control of a light emitting element portion by inputting a signal to the gate electrodes 9012a and 9012b.

JP 2009-76791 A

  However, in the TFT device according to the related art, the organic semiconductor layer is formed up to a portion where the organic semiconductor layer is not desired (in FIG. 18A, inside the opening 9016a), and other elements (for example, There is a problem in that poor electrical connection with the light emitting element portion occurs. Specifically, as shown in FIG. 18B, when the organic semiconductor inks 90170a and 90170b are applied (dropped) into the openings 9016b and 9016c opened in the partition wall 9016, the organic semiconductor links 90170a and 90170b It may overflow and enter the inside of the opening 9016a (arrow F91 in FIG. 18B). In this case, the connection wiring 9015 provided for electrical connection is covered with the organic semiconductor layer.

In particular, in liquid crystal display panels and organic EL display panels, downsizing of each subpixel is also requested due to the demand for refinement. As each subpixel is downsized, the distance between the openings is shortened and overflows from the openings. It is considered that the above problems are likely to occur because the ink easily enters other openings.
Further, as shown in FIG. 18B, the organic semiconductor ink 90170a and 90170b are applied to the inside of the openings 9016b and 9016c so as to rise from the top surface of the partition wall 9016. There is a possibility that the semiconductor ink 90170a and the organic semiconductor ink 90170b are mixed. In this case, the organic semiconductor layers 9017a and 9017b have an undesired thickness, and when semiconductor layers having different components are to be formed, mixing of the ink causes a decrease in transistor performance. .

In particular, in liquid crystal display panels and organic EL display panels, downsizing of each subpixel is also required due to the demand for refinement, and the distance between the opening 9016b and the opening 9016c is shortened as each subpixel is downsized. Therefore, it is considered that the ink 90170a and the ink 90170b are easily mixed, and the above problem is likely to occur.
The present invention has been made to solve the above-described problems. In forming the organic semiconductor layer, the formation of the organic semiconductor layer in an undesired region is suppressed, and the ink between adjacent openings is formed. An object of the present invention is to provide a thin film transistor device having high quality, a manufacturing method thereof, an organic EL display element, and an organic EL display device by suppressing mixing.

Thus, a thin film transistor device according to one embodiment of the present invention has the following characteristics.
A thin film transistor device according to one embodiment of the present invention includes first and second thin film transistor elements arranged adjacent to each other with a space therebetween, and each thin film transistor element is insulated from a gate electrode, a source electrode, and a drain electrode. A layer and an organic semiconductor layer.
The source electrode and the drain electrode are stacked above the gate electrode, and are arranged in parallel with each other in a direction intersecting the stacking direction. The insulating layer is interposed between the gate electrode, the source electrode, and the drain electrode. The organic semiconductor layer is formed on the gap between the source electrode and the drain electrode and on the source electrode and the drain electrode, and is in close contact with the source electrode and the drain electrode.

  In the thin film transistor device according to one embodiment of the present invention, a partition wall is formed between the organic semiconductor layer in the first thin film transistor element and the organic semiconductor layer in the second thin film transistor element. The partition wall separately surrounds at least a part of each of the source electrode and the drain electrode in the first thin film transistor element and at least a part of each of the source electrode and the drain electrode in the second thin film transistor element, and has a surface. Has liquid repellency.

  Here, an opening formed by surrounding at least a part of each of the source electrode and the drain electrode in the first thin film transistor element is defined as a first opening, and each of the source electrode and the drain electrode in the second thin film transistor element is formed. When the opening formed by surrounding at least a part of the second opening is used as the second opening, the partition wall is adjacent to the first opening with a space therebetween, and the second opening is provided. A third opening is provided on a side different from the adjacent side, and the third opening does not have an organic semiconductor layer formed therein, and does not function as a channel part.

  In the thin film transistor device according to one embodiment of the present invention, each side surface facing the first opening and the second opening in the partition wall includes a slope with a steep slope and a slope with a gentle slope. Of the side surface facing the opening, the portion on the side adjacent to the third opening, and on the side surface facing the first opening or one of the second openings, the portion on the side adjacent to the other opening Is a slope with a relatively steep slope.

  In the thin film transistor device according to one embodiment of the present invention, the portion of the side surface facing the first opening in the partition that is adjacent to the third opening is a slope with a relatively steep slope. Therefore, when the organic semiconductor ink for forming the organic semiconductor layer is applied to the inside of the first opening during the manufacture of the thin film transistor device, the surface of the ink on the side different from the side on which the third opening is adjacent. The surface profile is such that the height is higher than the surface height of the ink on the side where the third opening is adjacent. Conversely, when organic semiconductor ink is applied (dropped) inside the first opening, the surface height of the ink on the side where the third opening is adjacent is unevenly distributed between the source electrode and the drain electrode. It can be made lower than the surface height of the ink on the coated side.

  Therefore, in the thin film transistor device according to one embodiment of the present invention, the organic semiconductor ink can be prevented from overflowing with respect to the third opening at the time of manufacture, and the organic semiconductor layer can be applied to a portion that does not function as a channel. Formation can be prevented. The layer thickness of the organic semiconductor layer formed inside the first opening can also be controlled with high accuracy by suppressing ink overflow.

  In the thin film transistor device according to one embodiment of the present invention, the portion of the side surface facing the first opening or the second opening that is adjacent to the other opening is relatively steep. It is a gentle slope. Therefore, when the organic semiconductor ink for forming the organic semiconductor layer is applied (dropped) inside each of the first opening and the second opening at the time of manufacturing the thin film transistor device, the inside of the one opening is inside. The applied organic semiconductor ink has a surface profile that the other opening is relatively high on the side opposite to the adjacent side.

  Therefore, in the thin film transistor device according to one embodiment of the present invention, it is possible to suppress an undesired mixing of the organic semiconductor inks applied to the insides of the first opening and the second opening at the time of manufacture. can do. Therefore, the first thin film transistor element and the second thin film transistor element can be formed with high accuracy from the viewpoint of the constituent material of the organic semiconductor layer and the thickness of the layer.

  Therefore, the thin film transistor device according to one embodiment of the present invention suppresses the formation of the organic semiconductor layer in an undesired region and the mixing of ink between adjacent openings when forming the organic semiconductor layer. By providing high quality.

1 is a schematic block diagram showing a schematic configuration of an organic EL display device 1 according to Embodiment 1 of the present invention. 3 is a schematic cross-sectional view showing a part of the configuration of the organic EL display panel 10. FIG. 2 is a schematic plan view showing a partial configuration of a TFT substrate 101. FIG. (A) is a schematic cross section which shows the structure of the AA 'cross section in the TFT substrate 101 shown in FIG. 3, (b) is a schematic cross section which shows the structure of a BB' cross section, (c ) Is a schematic cross-sectional view showing the configuration of the CC ′ cross-section. (A) is a process flow diagram which shows the outline of the manufacturing method of the organic electroluminescent display panel 10, (b) is a process flowchart which shows the outline of the formation method of the TFT substrate 101. (A) is a schematic top view which shows the state which apply | coated organic-semiconductor ink 10170a, 10170b to each of opening part 1016b, 1016c among the manufacturing processes of TFT substrate 101, (b) is the DD '. It is a schematic cross section which shows the structure of a cross section, (c) is a schematic cross section which shows the structure of an EE 'cross section. (A), (c), (e) is a schematic process diagram which shows a part process concerning manufacture of the part corresponded in the cross section shown in FIG.4 (b) among the manufacturing processes of TFT substrate 101, ( b), (d), and (f) are schematic process diagrams showing a partial process relating to the manufacture of a portion corresponding to the cross section shown in FIG. (A), (c) is a schematic process diagram which shows the one part process which concerns on manufacture of the part corresponded in the cross section shown in FIG.4 (b) among the manufacturing processes of TFT substrate 101, (b), ( FIG. 4D is a schematic process diagram showing a partial process relating to the manufacture of a portion corresponding to the cross section shown in FIG. (A) is a schematic process drawing which shows a part process of the part corresponded to the cross section shown in FIG.4 (b) among the manufacturing processes of TFT substrate 101 which concerns on Embodiment 2 of this invention, (b) FIG. 5 is a schematic process diagram showing a partial process for manufacturing a portion corresponding to the cross section shown in FIG. (A), (c) is a schematic process diagram which shows a part process of the part corresponded to the cross section shown in FIG.4 (b) among the manufacturing processes of TFT substrate 101 which concerns on Embodiment 3 of this invention. , (B), (d) are schematic process diagrams showing a part of the process corresponding to the cross section shown in FIG. (A), (c) is a schematic process diagram which shows a part process of the part corresponded to the cross section shown in FIG.4 (b) among the manufacturing processes of TFT substrate 101 which concerns on Embodiment 3 of this invention. , (B), (d) are schematic process diagrams showing a part of the process corresponding to the cross section shown in FIG. (A) is a schematic top view which shows a partial structure of a TFT substrate among the structures of the organic electroluminescence display panel which concerns on Embodiment 4 of this invention, (b) is Embodiment 5 of this invention. It is a schematic plan view which shows a part structure of a TFT substrate among the structures of the organic EL display panel which concerns, (c) is a TFT substrate among the structures of the organic EL display panel which concerns on Embodiment 6 of this invention. It is a schematic plan view which shows a partial structure. (A) is a schematic top view which shows a partial structure of a TFT substrate among the structures of the organic electroluminescence display panel which concerns on Embodiment 7 of this invention, (b) is Embodiment 8 of this invention. It is a schematic plan view which shows a partial structure of a TFT substrate among the structures of the organic EL display panel. (A) is a schematic top view which shows a partial structure of a TFT substrate among the structures of the organic electroluminescence display panel which concerns on Embodiment 9 of this invention, (b) is Embodiment 10 of this invention. It is a schematic top view which shows a part structure of a TFT substrate among the structures of the organic EL display panel which concerns, (c) is a structure of a TFT substrate among the structures of the organic EL display panel which concerns on Embodiment 11 of this invention. It is a schematic plan view which shows a partial structure. (A) is a schematic top view which shows a partial structure of a TFT substrate among the structures of the organic electroluminescence display panel which concerns on Embodiment 12 of this invention, (b) is Embodiment 13 of this invention. It is a schematic plan view which shows a part structure of a TFT substrate among the structures of the organic EL display panel which concerns, (c) is a TFT substrate among the structures of the organic EL display panel which concerns on Embodiment 14 of this invention. It is a schematic plan view which shows a partial structure. (A) And (b) is a schematic diagram which shows how to define the inclination-angle of the side part which faces the opening part of the partition in a TFT substrate. (A) is a schematic top view which shows the opening shape of the opening part prescribed | regulated by the partition in the TFT substrate which concerns on the modification 1, (b) is prescribed | regulated by the partition in the TFT substrate which concerns on the modification 2. FIG. FIG. 6C is a schematic plan view showing the opening shape of the opening defined by the partition wall in the TFT substrate according to Modification 3. FIG. (A) is sectional drawing which shows a part of structure of a TFT substrate among the structures of the organic electroluminescent display apparatus which concerns on a prior art, (b) is organic in the manufacturing process of the TFT substrate which concerns on a prior art. It is sectional drawing which shows the process which concerns on application | coating of a semiconductor ink.

[Outline of Embodiments of the Present Invention]
A thin film transistor device according to one embodiment of the present invention includes first and second thin film transistor elements arranged adjacent to each other with a space therebetween, and each thin film transistor element is insulated from a gate electrode, a source electrode, and a drain electrode. A layer and an organic semiconductor layer.
The source electrode and the drain electrode are stacked above the gate electrode, and are arranged in parallel with each other in a direction intersecting the stacking direction. The insulating layer is interposed between the gate electrode, the source electrode, and the drain electrode. The organic semiconductor layer is formed on the gap between the source electrode and the drain electrode and on the source electrode and the drain electrode, and is in close contact with the source electrode and the drain electrode.

  In the thin film transistor device according to one embodiment of the present invention, a partition wall is formed between the organic semiconductor layer in the first thin film transistor element and the organic semiconductor layer in the second thin film transistor element. The partition wall separately surrounds at least a part of each of the source electrode and the drain electrode in the first thin film transistor element and at least a part of each of the source electrode and the drain electrode in the second thin film transistor element, and has a surface. Has liquid repellency.

  Here, an opening formed by surrounding at least a part of each of the source electrode and the drain electrode in the first thin film transistor element is defined as a first opening, and each of the source electrode and the drain electrode in the second thin film transistor element is formed. When the opening formed by surrounding at least a part of the second opening is used as the second opening, the partition wall is adjacent to the first opening with a space therebetween, and the second opening is provided. A third opening is provided on a side different from the adjacent side, and the third opening does not have an organic semiconductor layer formed therein, and does not function as a channel part.

  In the thin film transistor device according to one embodiment of the present invention, each side surface facing the first opening and the second opening in the partition wall includes a slope with a steep slope and a slope with a gentle slope. Of the side surface facing the opening, the portion on the side adjacent to the third opening, and on the side surface facing the first opening or one of the second openings, the portion on the side adjacent to the other opening Is a slope with a relatively steep slope.

  In the thin film transistor device according to one embodiment of the present invention, the portion of the side surface facing the first opening in the partition that is adjacent to the third opening is a slope with a relatively steep slope. Therefore, when the organic semiconductor ink for forming the organic semiconductor layer is applied to the inside of the first opening during the manufacture of the thin film transistor device, the surface of the ink on the side different from the side on which the third opening is adjacent. The surface profile is such that the height is higher than the surface height of the ink on the side where the third opening is adjacent. Conversely, when organic semiconductor ink is applied (dropped) inside the first opening, the surface height of the ink on the side where the third opening is adjacent is unevenly distributed between the source electrode and the drain electrode. It can be made lower than the surface height of the ink on the coated side.

  Therefore, in the thin film transistor device according to one embodiment of the present invention, the organic semiconductor ink can be prevented from overflowing with respect to the third opening at the time of manufacture, and the organic semiconductor layer can be applied to a portion that does not function as a channel. Formation can be prevented. The layer thickness of the organic semiconductor layer formed inside the first opening can also be controlled with high accuracy by suppressing ink overflow.

  In the thin film transistor device according to one embodiment of the present invention, the portion of the side surface facing the first opening or the second opening that is adjacent to the other opening is relatively steep. It is a gentle slope. Therefore, when the organic semiconductor ink for forming the organic semiconductor layer is applied (dropped) inside each of the first opening and the second opening at the time of manufacturing the thin film transistor device, the inside of the one opening is inside. The applied organic semiconductor ink has a surface profile that the other opening is relatively high on the side opposite to the adjacent side.

  Therefore, in the thin film transistor device according to one embodiment of the present invention, it is possible to suppress an undesired mixing of the organic semiconductor inks applied to the insides of the first opening and the second opening at the time of manufacture. can do. Therefore, the first thin film transistor element and the second thin film transistor element can be formed with high accuracy from the viewpoint of the constituent material of the organic semiconductor layer and the thickness of the layer.

Therefore, the thin film transistor device according to one embodiment of the present invention suppresses the formation of the organic semiconductor layer in an undesired region and the mixing of ink between adjacent openings when forming the organic semiconductor layer. By providing high quality.
In the thin film transistor device according to one embodiment of the present invention, in addition to the above structure, the other of the side surface portion facing the first opening and the side surface facing the second opening in the partition wall is on the side where the one opening portion is adjacent. The portion is a slope having a relatively steep slope. When such a configuration is further adopted, the mixing of the organic semiconductor ink applied to the inside of the first opening and the organic semiconductor ink applied to the inside of the second opening can be more reliably suppressed. it can.

Therefore, the thin film transistor device according to one embodiment of the present invention suppresses the formation of the organic semiconductor layer in an undesired region and the mixing of ink between adjacent openings when forming the organic semiconductor layer. By providing high quality.
In the thin film transistor device according to one embodiment of the present invention, in addition to the above structure, the third opening, the first opening, and the second opening are arranged in series in this order in a plan view, and the first opening in the partition wall Among the side faces facing the part, at least a part of the part existing in the direction intersecting the arrangement direction of the three openings (first opening, second opening, and third opening) is relatively inclined. It is characterized by a gentle slope. By adopting such a configuration, the organic semiconductor ink applied to the inside of the first opening has a low height at least on the side adjacent to the third opening, and the inclination is relatively gentle. It has a surface profile that the height is high on the side of the sloped portion. Therefore, by setting the surface profile of the organic semiconductor ink applied to the inside of the first opening in a biased state as described above, the overflow of the organic semiconductor ink to the third opening is further effectively suppressed. be able to.

Therefore, the thin film transistor device according to one embodiment of the present invention suppresses the formation of the organic semiconductor layer in an undesired region and the mixing of ink between adjacent openings when forming the organic semiconductor layer. By providing high quality.
In the thin film transistor device according to one embodiment of the present invention, in addition to the above structure, three opening portions (first opening portion, second opening portion, and third opening portion) among the side surface portions facing the second opening portion in the partition wall are provided. It is characterized in that at least a part of the part existing in the direction intersecting the arrangement direction is a slope having a relatively gentle slope. By adopting such a configuration, the organic semiconductor ink applied to the inside of the second opening has a slope with a relatively gentle slope in a portion that exists in a direction intersecting the arrangement direction. It will have a surface profile that is high on the part side. Therefore, by setting the surface profile of the organic semiconductor ink applied inside the second opening to a biased state as described above, the organic semiconductor ink applied inside the first opening and the second opening Mixing with the organic semiconductor ink applied inside can be more effectively suppressed.

Therefore, the thin film transistor device according to one embodiment of the present invention suppresses the formation of the organic semiconductor layer in an undesired region and the mixing of ink between adjacent openings when forming the organic semiconductor layer. By providing high quality.
In the thin film transistor device according to one embodiment of the present invention, in addition to the above structure, of the side surfaces facing the first opening in the partition, the portion having a relatively gentle slope and the second opening in the partition face Of the side surface portions, a portion having a relatively gentle slope is mutually sandwiched across an imaginary axis related to the arrangement of three openings (first opening, second opening, and third opening). It exists in the other side, It is characterized by the above-mentioned. As described above, each surface profile of the organic semiconductor ink applied to the inside of the first opening and the inside of the second opening has a height on the side of the slope where the slope is relatively gentle. Therefore, the first opening is provided by providing slopes with relatively gentle slopes between the side face facing the first opening and the side face facing the second opening on opposite sides of the virtual axis. Mixing of the organic semiconductor ink applied to the inside of the portion and the organic semiconductor ink applied to the inside of the second opening can be further reliably suppressed.

Therefore, the thin film transistor device according to one embodiment of the present invention suppresses the formation of the organic semiconductor layer in an undesired region and the mixing of ink between adjacent openings when forming the organic semiconductor layer. By providing high quality.
In the thin film transistor device according to one embodiment of the present invention, in addition to the above structure, a portion on the side where the one opening is adjacent to the other of the side surface facing the first opening or the side surface facing the second opening in the partition wall Is a slope having a relatively gentle slope. Even in the case of adopting such a configuration, the one of the above-mentioned ones is controlled by controlling the surface profile of the organic semiconductor ink applied to the inside of the other opening (the first opening or the second opening). Mixing with the organic semiconductor ink applied to the inside of the opening can be effectively suppressed.

The thin film transistor device according to one embodiment of the present invention is characterized in that the inclination is defined by the size of an angle formed between the side surface of the partition wall and the upper surface of the base layer on which the partition wall is provided.
In the thin film transistor device according to one embodiment of the present invention, among the side surfaces facing the first opening in the partition, the portion on the side adjacent to the second opening which is a relatively steep slope is relatively inclined. The inclination angle is 5 [deg. ] Larger than that.

In the above, it is preferable that the inclination angle of the “slope having a relatively gentle inclination” is, for example, in the range of 25 ° to 30 °. In the above description, it is preferable that the inclination angle of the “slope having a relatively steep inclination” is in the range of 35 ° to 40 °.
An organic EL display element according to one embodiment of the present invention includes a thin film transistor device according to any one of the above embodiments, a planarization film provided over the thin film transistor device, in which a contact hole is formed, a planarization film, and a planarization film. A lower electrode electrically connected to the drain electrode or the source electrode, an upper electrode formed above the lower electrode, and between the lower electrode and the upper electrode. And an organic light emitting layer interposed, and the contact hole communicates with the third opening.

As described above, the organic EL display element according to one aspect of the present invention includes the thin film transistor device according to any one aspect of the present invention. Therefore, the organic EL display element has high quality and secures a high yield during manufacturing. can do.
An organic EL display device according to one embodiment of the present invention includes the organic EL display element according to one embodiment of the present invention. Accordingly, the organic EL display device according to one embodiment of the present invention can also have high quality and a high yield at the time of manufacturing.

A manufacturing method of a thin film transistor device according to one embodiment of the present invention includes the following steps.
(I) First step: forming first and second gate electrodes adjacent to each other in a state of being spaced apart from each other on the substrate.
(Ii) Second step; an insulating layer is formed so as to cover the first and second gate electrodes.

  (Iii) Third step: On the insulating layer, in correspondence with the first gate electrode, the first source electrode and the first source electrode are spaced apart from each other in a direction intersecting the layer thickness direction of the insulating layer. The first source electrode and the second source electrode are arranged in parallel with each other in the direction intersecting the layer thickness direction of the insulating layer corresponding to the second gate electrode. The drain electrodes are arranged side by side.

(Iv) Fourth step: A photosensitive resist material is laminated on the insulating layer so as to cover the first and second source electrodes, the first and second drain electrodes, and the peripheral region thereof.
(V) Fifth step; by patterning the laminated photosensitive resist material by mask exposure, at least a part of each of the first source electrode and the first drain electrode, the second source electrode, and the second source electrode At least a part of each of the two drain electrodes is separately surrounded, and a partition wall having liquid repellency is formed.

  (Vi) Sixth step: the inside of the first opening formed by surrounding at least a part of each of the first source electrode and the first drain electrode, and the second source electrode and the second drain An organic semiconductor material is applied to each of the inside of the second opening formed by surrounding at least a part of each of the electrodes and dried, and the first source electrode and the first drain electrode are then dried. Forming a first organic semiconductor layer in close contact with the second source electrode and a second organic semiconductor layer in close contact with the second source electrode and the second drain electrode.

  In the method for manufacturing a thin film transistor device according to one aspect of the present invention, in the fifth step, the first opening is adjacent to the first opening and spaced apart from the second opening. In addition to providing three openings, each side face facing the first opening and the second opening in the partition wall is composed of a slope having a steep slope and a slope having a gentle slope. And in the said 5th process, among the side parts which face the 1st opening part in a partition, the part of the side which the 3rd opening part adjoins, and the side part which faces one of a 1st opening part or a 2nd opening part Among them, the partition wall is formed so that the portion on the side where the other opening is adjacent becomes a relatively steep slope.

  In the method of manufacturing a thin film transistor device according to one aspect of the present invention, in the fifth step, the side surfaces facing the first opening and the second opening are configured with slopes that are gradually steep as described above. Therefore, when the organic semiconductor ink for forming the organic semiconductor layer is applied to the inside of the first opening, the surface height of the ink on the side different from the side adjacent to the third opening is the third opening. Has a surface profile that is higher than the surface height of the ink on the adjacent side. Conversely, when ink is applied (dropped) inside the first opening, the surface height of the ink on the side adjacent to the third opening is determined by the first source electrode and the first drain electrode. Can be made lower than the surface height of the ink on the side where is unevenly arranged.

  In addition, the organic semiconductor ink applied to the inside of the first opening by configuring each side surface facing the first opening and the second opening with a slanted surface for each part as described above, The organic semiconductor ink applied to the inside of the second opening can be prevented from mixing with each other. As described above, this is because the surface profile of each organic semiconductor ink can be controlled by making the slopes of the side surfaces of the first opening and the second opening gentle.

  Therefore, if the method for manufacturing a thin film transistor device according to one embodiment of the present invention is used, the organic semiconductor ink can be prevented from overflowing with respect to the third opening, and the organic semiconductor layer can be applied to a portion that does not function as a channel. The formation can be prevented, and the first thin film transistor element and the second thin film transistor element can be formed with high accuracy from the viewpoint of the constituent material of the organic semiconductor layer and the thickness of the layer.

Therefore, in the method for manufacturing a thin film transistor device according to one embodiment of the present invention, when forming the organic semiconductor layer, the formation of the organic semiconductor layer in an undesired region is suppressed, and ink mixing between adjacent openings is performed. By suppressing, a thin film transistor device having high quality can be manufactured.
In the method for manufacturing a thin film transistor device according to one embodiment of the present invention, in the fifth step, the side portion facing the other of the first opening or the second opening in the partition is the portion on the side where the one opening is adjacent. However, the partition wall is formed so as to have a relatively steep slope. When such a configuration is further adopted, the mixing of the organic semiconductor ink applied to the inside of the first opening and the organic semiconductor ink applied to the inside of the second opening can be more reliably suppressed. it can.

Therefore, in the method for manufacturing a thin film transistor device according to one embodiment of the present invention, when forming the organic semiconductor layer, the formation of the organic semiconductor layer in an undesired region is suppressed, and ink mixing between adjacent openings is performed. By suppressing, a thin film transistor device having high quality can be manufactured.
The following method is adopted as a specific method for forming a slope with a relatively steep slope and a slope with a relatively gentle slope on each side face facing the first opening and the second opening. can do.

(1) In the method for manufacturing a thin film transistor device according to one aspect of the present invention, in the fifth step, a slope with a relatively steep slope among the side faces facing the first opening and the second opening in the partition. The exposure amount for the portion to be adjusted is set larger than the exposure amount for the portion to be inclined with a relatively gentle slope.
(2) In the method of manufacturing the thin film transistor device according to one aspect of the present invention, in the fifth step, the portion of the partition wall where the first opening and the side opening facing the second opening are to be formed is photosensitive. After exposing the photosensitive resist material, an exposure process is additionally performed on a portion that is intended to have a relatively steep slope.

(3) In the manufacturing method of the thin film transistor device according to one aspect of the present invention, in the fifth step, the slope having a relatively steep slope among the side surfaces facing the first opening and the second opening in the partition wall The exposure is performed using a mask in which the light transmittance of the portion to be made is larger than the light transmittance of the portion to be made a relatively gentle slope.
Even when any of the above methods (1) to (3) is adopted, a slope having a steep slope and a slope having a gentle slope can be reliably formed on the side surface.

In the above description, the term “upward” does not indicate the upward direction (vertically upward) in absolute space recognition, but is defined based on the stacking order in the stacking configuration. Further, the term “upward” is applied not only when there is a gap between them but also when they are in close contact with each other.
Below, the characteristics of the aspect which concerns on this invention, an effect | action and an effect are demonstrated using some specific examples. The present invention is not limited to the following embodiments except for essential characteristic components.

[Embodiment 1]
1. Overall Configuration of Organic EL Display Device 1 Hereinafter, the configuration of the organic EL display device 1 according to Embodiment 1 of the present invention will be described with reference to FIG.
As shown in FIG. 1, the organic EL display device 1 includes an organic EL display panel 10 and a drive control circuit unit 20 connected thereto.

The organic EL display panel 10 is a panel using an electroluminescence phenomenon of an organic material, and a plurality of organic EL elements are arranged in a matrix, for example. The drive control circuit unit 20 includes four drive circuits 21 to 24 and a control circuit 25.
In the organic EL display device 1 according to the present embodiment, the arrangement of the drive control circuit unit 20 with respect to the organic EL display panel 10 is not limited to this.

2. Configuration of Organic EL Display Panel 10 The configuration of the organic EL display panel 10 will be described with reference to the schematic cross-sectional view of FIG. 2 and FIG.
As shown in FIG. 2, the organic EL display panel 10 includes a TFT (thin film transistor) substrate 101. The TFT substrate 101 is laminated on a substrate 1011 with gate electrodes 1012a and 1012b spaced from each other, and an insulating layer 1013 is laminated so as to cover the gate electrodes 1012a and 1012b. On the insulating layer 1013, a source electrode 1014a and a drain electrode 1014c are provided corresponding to the gate electrode 1012a, and similarly, a source electrode 1014b and a drain electrode 1014d are provided corresponding to the gate electrode 1012b. . As shown in FIG. 3, the source electrode 1014a and the drain electrode 1014c, and the source electrode 1014b and the drain electrode 1014d are arranged facing each other in the Y-axis direction.

  As shown in FIGS. 2 and 3, a connection wiring 1015 is formed on the insulating layer 1013 with a space leftward in the X-axis direction with respect to the source electrode 1014a and the drain electrode 1014c. Note that the connection wiring 1015 extends from either the source electrode 1014a or the drain electrode 1014c, or the source electrode 1014b or the drain electrode 1014d, or is electrically connected to any of these.

  As shown in FIGS. 2 and 3, a partition 1016 is formed on the insulating layer 1013 so as to surround the connection wiring 1015, the source electrode 1014a and the drain electrode 1014c, and the source electrode 1014b and the drain electrode 1014d separately. Yes. In other words, as shown in FIG. 3, among the three openings 1016a, 1016b, and 1016c opened in the partition wall 1016, the opening 1016a on the left side in the X-axis direction where the connection wiring 1015 is exposed at the bottom functions as a channel part. It functions as a contact portion with the anode 103, not as a portion to perform.

On the other hand, an opening 1016b where the source electrode 1014a and the drain electrode 1014c are exposed at the bottom and an opening 1016c where the source electrode 1014b and the drain electrode 1014d are exposed at the bottom are portions that function as channel portions.
As shown in FIG. 2, in each region surrounded by the partition wall 1016, a region corresponding to the source electrode 1014a and the drain electrode 1014c and a region corresponding to the source electrode 1014b and the drain electrode 1014d are respectively Organic semiconductor layers 1017a and 1017b are stacked. The organic semiconductor layer 1017a is formed so as to fill the gap between the source electrode 1014a and the drain electrode 1014c and the source electrode 1014a and the drain electrode 1014c, and is in close contact with the electrodes 1014a and 1014c. Similarly, the organic semiconductor layer 1017b is formed in close contact with the electrodes 1014b and 1014d. The organic semiconductor layers 1017a and 1017b are partitioned from each other by a partition wall 1016.

As shown in FIG. 3, in each of the openings 1016b and 1016c, part of the insulating layer 1013 is not covered with the source electrodes 1014a and 1014b and the drain electrodes 1014c and 1014d, and the organic semiconductor layer 1017a , 1017b are in direct contact with each other.
As shown in FIG. 2, a passivation film 1018 is laminated so as to cover the organic semiconductor layers 1017 a and 1017 b and the insulating layer 1013. However, the portion corresponding to the connection wiring 1015 is opened.

The TFT substrate 101 of the organic EL display panel 10 according to the present embodiment has the above configuration.
Next, the TFT substrate 101 is covered with a planarizing film 102. However, a contact hole 102 a is opened on the connection wiring 1015. The contact hole 102a communicates with the opening 1016a in the TFT substrate 101.

  On the main surface of the planarizing film 102, an anode 103, a transparent conductive film 104, and a hole injection layer 105 are sequentially stacked. The anode 103, the transparent conductive film 104, and the hole injection layer 105 are also formed along the side surface of the planarization film 102 facing the contact hole 102a. The anode 103 is in contact with the connection wiring 1015 and is electrically It is connected to the.

A bank 106 is formed on the hole injection layer 105 so as to surround a portion corresponding to a light emitting portion (subpixel). In the opening formed by surrounding the bank 106, a hole transport layer 107, an organic light emitting layer 108, and an electron transport layer 109 are sequentially stacked.
Further, a cathode 110 and a sealing layer 111 are sequentially stacked so as to cover the electron transport layer 109 and the exposed surface of the bank 106, and a CF (color filter) substrate 113 is disposed so as to face the sealing layer 111. The adhesive layer 112 is filled in between and bonded to each other. The CF substrate 113 is configured by forming a color filter 1132 and a black matrix 1133 on the lower main surface in the Z-axis direction of the substrate 1131.

3. Components of Organic EL Display Panel 10 In the organic EL display panel 10, for example, each part can be formed using the following materials.
(I) Substrate 1011
The substrate 1011 is, for example, a glass substrate, a quartz substrate, a silicon substrate, molybdenum sulfide, copper, zinc, aluminum, stainless steel, magnesium, iron, nickel, gold, silver or other metal substrate, a gallium arsenide based semiconductor substrate, A plastic substrate or the like can be used.

  As the plastic substrate, either a thermoplastic resin or a thermosetting resin may be used. For example, polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide (PI), Polyamideimide, polycarbonate, poly- (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer (AS resin), butadiene-styrene copolymer, polio copolymer (EVOH) ), Polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate (PEN), precyclohexane terephthalate (PCT), polyethers, polyether ketones Polyethersulfone (PES), polyetherimide, polyacetal, polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin Various types of thermoplastic elastomers such as polyvinyl chloride, polyurethane, fluororubber, chlorinated polyethylene, epoxy resin, phenol resin, urea resin, melamine resin, unsaturated polyester, silicone resin, polyurethane, etc. Copolymers, blends, polymer alloys and the like are mentioned, and a laminate obtained by laminating one or more of these can be used.

(Ii) Gate electrodes 1012a and 1012b
The gate electrodes 1012a and 1012b are not particularly limited as long as they are conductive materials, for example.
Specific materials include, for example, chromium, aluminum, tantalum, molybdenum, niobium, copper, silver, gold, platinum, platinum, palladium, indium, nickel, neodymium, or an alloy thereof, or zinc oxide or tin oxide. , Conductive metal oxides such as indium oxide and gallium oxide or indium tin complex oxide (hereinafter abbreviated as “ITO”), indium zinc complex oxide (hereinafter abbreviated as “IZO”), aluminum zinc complex oxide (AZO), conductive metal composite oxides such as gallium zinc composite oxide (GZO), or conductive polymers such as polyaniline, polypyrrole, polythiophene, polyacetylene, and acids such as hydrochloric acid, sulfuric acid, sulfonic acid, etc. Lewis acid such as phosphorus hexafluoride, arsenic pentafluoride, iron chloride, iodine Halogen atoms, such as, sodium, obtained by adding a dopant such as a metal atom such as potassium or, and a composite material of the conductive dispersed carbon black or metal particles. Alternatively, a polymer mixture containing fine metal particles and conductive particles such as graphite may be used. These may be used alone or in combination of two or more.

(Iii) Insulating layer 1013
The insulating layer 1013 functions as a gate insulating layer and is not particularly limited as long as it is an insulating material, for example, and any known organic material or inorganic material can be used.
As the organic material, for example, an acrylic resin, a phenol resin, a fluorine resin, an epoxy resin, an imide resin, a novolac resin, or the like can be used.

  Examples of inorganic materials include silicon oxide, aluminum oxide, tantalum oxide, zirconium oxide, cerium oxide, zinc oxide, cobalt oxide and other metal oxides, silicon nitride, aluminum nitride, zirconium nitride, cerium nitride, zinc nitride, Examples thereof include metal nitrides such as cobalt nitride, titanium nitride, and tantalum nitride, and metal composite oxides such as barium strontium titanate and lead zirconium titanate. These can be used alone or in combination of two or more.

Furthermore, the surface treatment agent (ODTS OTS HMDS βPTS) and the like are also included.
(Iv) Source electrodes 1014a and 1014b and drain electrodes 1014c and 1014d
The source electrodes 1014a and 1014b and the drain electrodes 1014c and 1014d can be formed using the above materials for forming the gate electrodes 1012a and 1012b.

(V) Organic semiconductor layers 1017a and 1017b
The organic semiconductor layers 1017a and 1017b are not particularly limited as long as they have, for example, semiconductor characteristics and are soluble in a solvent. For example, poly (3-alkylthiophene), poly (3-hexylthiophene) (P3HT), poly (3-octylthiophene), poly (2,5-thienylenevinylene) (PTV) or quarterthiophene (4T), Α-oligothiophenes such as cithiophene (6T) and octathiophene or 2,5-bis (5′-biphenyl-2′-thienyl) -thiophene (BPT3), 2,5- [2,2 ′-(5 , 5'-diphenyl) dithienyl] -thiophene, thiophene derivatives such as poly (para-phenylenevinylene) (PPV), fluorene derivatives such as poly (9,9-dioctylfluorene) (PFO), triallylamine Polymers, anthracene, tetracene, pentacene, hexacene, etc. Acene compounds, 1,3,5-tris [(3-phenyl-6-tri-fluoromethyl) quinoxalin-2-yl] benzene (TPQ1) and 1,3,5-tris [{3- (4-t- Butyl derivatives such as butylphenyl) -6-trisfluoromethyl} quinoxalin-2-yl] benzene (TPQ2), phthalocyanine derivatives such as phthalocyanine, copper phthalocyanine (CuPc) and iron phthalocyanine, tris (8-hydroxyquinolinolate) Organometallic compounds such as aluminum (Alq3) and factory (2-phenylpyridine) iridium (Ir (ppy) 3), C60, oxadiazole polymers, triazole polymers, carbazole polymers and fluorenes Polymeric compounds such as polymers and poly ( , 9-Dioctylfluorene-co-bis-N, N ′-(4-methoxyphenyl) -bis-N, N′-phenyl-1,4-phenylenediamine) (PFMO), poly (9,9-dioctylfluorene) -Co-benzothiadiazole) (BT), fluorene-triallylamine copolymers and copolymers with fluorenes such as poly (9,9-dioctylfluorene-co-dithiophene) (F8T2). These can be used alone or in combination of two or more.

It is also possible to use an inorganic material soluble in a solvent.
(Vi) Passivation film 1018
The passivation film 1018 can be formed using, for example, a water-soluble resin such as polyvinyl alcohol (PVA), a fluorine resin, or the like.
(Vii) Planarizing film 102
The planarization film 102 is formed using an organic compound such as polyimide, polyamide, or acrylic resin material.

(Viii) Anode 103
The anode 103 is made of a metal material containing silver (Ag) or aluminum (Al). In the case of the organic EL display panel 10 according to this embodiment of the top emission type, it is preferable that the surface portion has high reflectivity.
(Ix) Transparent conductive film 104
The transparent conductive film 104 is formed using, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

(X) Hole injection layer 105
The hole injection layer 105 may be formed of, for example, an oxide such as silver (Ag), molybdenum (Mo), chromium (Cr), vanadium (V), tungsten (W), nickel (Ni), iridium (Ir), or PEDOT. It is a layer made of a conductive polymer material such as (mixture of polythiophene and polystyrene sulfonic acid). In the organic EL display panel 10 according to the present embodiment shown in FIG. 2, it is assumed that the hole injection layer 105 made of a metal oxide is formed. In this case, a conductive polymer such as PEDOT is used. Compared to the case where a material is used, the hole has a function of injecting holes into the organic light emitting layer 108 stably or by assisting the generation of holes, and has a large work function.

  Here, when the hole injection layer 105 is composed of an oxide of a transition metal, a plurality of levels can be obtained by taking a plurality of oxidation numbers. As a result, hole injection is facilitated and the drive voltage is increased. Can be reduced. In particular, it is desirable to use tungsten oxide (WOX) from the viewpoint of stably injecting holes and assisting the generation of holes.

(Xi) Bank 106
The bank 106 is formed using an organic material such as resin and has an insulating property. Examples of the organic material used for forming the bank 106 include acrylic resin, polyimide resin, and novolac type phenol resin. The bank 106 preferably has organic solvent resistance. Furthermore, since the bank 106 may be subjected to an etching process, a baking process, or the like during the manufacturing process, the bank 106 should be formed of a highly resistant material that does not excessively deform or alter the process. Is preferred. Moreover, in order to give the surface water repellency, the surface can be treated with fluorine.

When the bank 106 is formed using a lyophilic material, the difference in lyophilicity / liquid repellency between the surface of the bank 106 and the surface of the light emitting layer 108 is reduced, and the organic light emitting layer 108 is formed. For this reason, it is difficult to selectively hold the ink containing the organic substance in the opening defined by the bank 106.
Furthermore, as for the structure of the bank 106, not only a single layer structure as shown in FIG. 2, but also a multilayer structure of two or more layers can be adopted. In this case, the above materials can be combined for each layer, and an inorganic material and an organic material can be used for each layer.

(Xii) hole transport layer 107
The hole transport layer 107 is formed using a polymer compound having no hydrophilic group. For example, polyfluorene or a derivative thereof, or a polymer compound such as polyarylamine or a derivative thereof that does not have a hydrophilic group can be used.
(Xiii) Organic light emitting layer 108
As described above, the light-emitting layer 108 has a function of emitting light by generating an excited state when holes and electrons are injected and recombined. As a material used for forming the organic light emitting layer 108, it is necessary to use a light emitting organic material that can be formed by a wet printing method.

  Specifically, for example, an oxinoid compound, a perylene compound, a coumarin compound, an azacoumarin compound, an oxazole compound, an oxadiazole compound, a perinone compound, and pyrrolopyrrole described in Japanese Patent Publication (JP-A-5-163488). Compound, naphthalene compound, anthracene compound, fluorene compound, fluoranthene compound, tetracene compound, pyrene compound, coronene compound, quinolone compound and azaquinolone compound, pyrazoline derivative and pyrazolone derivative, rhodamine compound, chrysene compound, phenanthrene compound, cyclopentadiene compound, stilbene compound , Diphenylquinone compound, styryl compound, butadiene compound, dicyanomethylenepyran compound, dicyanomethylenethiopyran compound, fluorene In compounds, pyrylium compounds, thiapyrylium compounds, serenapyrylium compounds, telluropyrylium compounds, aromatic ardadiene compounds, oligophenylene compounds, thioxanthene compounds, anthracene compounds, cyanine compounds, acridine compounds, 8-hydroxyquinoline compound metal complexes, 2- It is preferably formed of a fluorescent substance such as a metal complex of a bipyridine compound, a Schiff salt and a group III metal complex, an oxine metal complex, or a rare earth complex.

(Xiv) Electron transport layer 109
The electron transport layer 109 has a function of transporting electrons injected from the cathode 110 to the light emitting layer 108. For example, an oxadiazole derivative (OXD), a triazole derivative (TAZ), a phenanthroline derivative (BCP, Bphen) Etc. are formed.
(Xv) Cathode 110
The cathode 110 is formed using, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). As in this embodiment, in the case of the organic EL display panel 10 according to this embodiment of the top emission type, it is necessary to be formed of a light transmissive material. About light transmittance, it is preferable that the transmittance | permeability shall be 80 [%] or more.

  In addition to the above, the material used for forming the cathode 110 includes, for example, a layer structure containing an alkali metal, an alkaline earth metal, or a halide thereof, or a layer containing silver in any one of the above layers. A structure in which the layers are stacked in this order can also be used. In the above, the layer containing silver may be formed of silver alone, or may be formed of a silver alloy. In order to improve the light extraction efficiency, a highly transparent refractive index adjusting layer can be provided on the silver-containing layer.

(Xvi) Sealing layer 111
The sealing layer 111 has a function of suppressing exposure of an organic layer such as the light emitting layer 108 to moisture or exposure to air. For example, SiN (silicon nitride), SiON (silicon oxynitride), or the like. It is formed using the material. Further, a sealing resin layer made of a resin material such as an acrylic resin or a silicone resin may be provided on a layer formed using a material such as SiN (silicon nitride) or SiON (silicon oxynitride).

In the case of the organic EL display panel 10 according to the present embodiment which is a top emission type, the sealing layer 111 needs to be formed of a light transmissive material.
4). Configuration of Partition 1016 on TFT Substrate 101 The configuration of the partition 1016 on the TFT substrate 101 will be described with reference to FIG. 4A shows an AA ′ section of the TFT substrate 101 of FIG. 3, FIG. 4B shows a BB ′ section of the TFT substrate 101 of FIG. 3, and FIG. FIG. 4 shows a CC ′ cross section of the TFT substrate 101 of FIG.

As described above, the partition 1016 has three openings 1016a, 1016b, and 1016c. In FIG. 4 and the like, the configuration in the portion corresponding to the other subpixels in the TFT substrate 101 is not shown, but the configuration is the same.
As shown in FIG. 4A to FIG. 4C, in the TFT substrate 101 according to the present embodiment, each side portion facing the openings 1016b and 1016c in the partition wall 1016 is formed of a slope, Some of them are slopes with a relatively steep slope, and others are slopes with a relatively gentle slope. Specifically, as shown in FIGS. 4 (a) and 4 (b), among the side faces facing the opening 1016b, the side face 1016d on the side adjacent to the opening 1016a and the opening 1016c are adjacent. The inclination of the side surface portion 1016e and the inclination of the side surface portion 1016h existing in the Y-axis direction perpendicular to the X-axis direction in which the openings 1016a, 1016b, and 1016c are arranged are open to the side surface portion 1016h. It is steeper than the slope of the side surface portion 1016i that faces the portion 1016b.

  Similarly, as shown in FIGS. 4 (a) and 4 (c), of the side surfaces facing the opening 1016c, the side surface portion 1016f adjacent to the opening portion 1016b and the opening portion with respect to the side surface portion 1016f. The inclination of the side surface portion 1016g facing each other across 1016c and the inclination of the side surface portion 1016k existing in the Y-axis direction orthogonal to the X-axis direction in which the openings 1016a, 1016b, and 1016c are arranged are the side surface portion 1016k. On the other hand, it is steeper than the inclination of the side surface portion 1016j opposed to the opening portion 1016c.

Here, in the present embodiment, when the inclination angles of the side surface portions 1016d to 1016k with respect to the surface of the insulating layer 1013 which is the base layer are angles θd to θk, the following relationship is satisfied.
[Formula 1] θd> θi
[Equation 2] θe> θi
[Equation 3] θh> θi
[Formula 4] θf> θj
[Formula 5] θg> θj
[Equation 6] θk> θj
Here, the side portions (steeply inclined side portions) 1016d, 1016e, 1016f, 1016g, 1016h, and 1016k having a steep inclination are inclined to the side portions (slowly inclined) θd, θe, θf, θg, θh, and θk. (Inclined side surface portion) 10 [deg. It is preferable that it is larger.

  In addition, the inclination angles θd, θe, θf, θg, θh, and θk of the side portions (steeply inclined side portions) 1016d, 1016e, 1016f, 1016g, 1016h, and 1016k having a steep inclination are, for example, 35 [°] or more and 40 [ °] is preferably within the following range, and the inclination angles θi and θj of the gently inclined side surface portions 1016i and 1016j having a gentle inclination are set within the range of 25 [°] to 30 [°], for example. preferable.

  As described above, in the partition wall 106, the slopes of the side surface portions 1016d to 1016k facing the openings 1016a, 1016b, and 1016c are set as described above when the organic semiconductor layers 1017a and 1017b are formed. The organic semiconductor ink applied to the inside of the opening 1016b is prevented from overflowing into the opening 1016a, and the organic semiconductor ink applied to the inside of the opening 1016b is mixed with the organic semiconductor ink applied to the inside of the opening 1016c. It is for suppressing. In other words, when the organic semiconductor ink is applied to the inside of the opening 1016b and the inside of the 1016c, the portion where the height of the organic semiconductor ink is high is biased to the side portions 1016i and 1016j that are gently inclined. It controls the surface profile of each organic semiconductor ink. This will be described later.

5. Manufacturing Method of Organic EL Display Device 1 A manufacturing method of the organic EL display device 1, particularly a manufacturing method of the organic EL display panel 10, will be described with reference to FIG. 2 and FIG.
As shown in FIGS. 2 and 5A, first, a substrate 1011 serving as a base of the TFT substrate 101 is prepared (step S1 in FIG. 5A). Then, a TFT (Thin Film Transistor) element is formed on the substrate 1011 to form the TFT substrate 101 (Step S2 in FIG. 5A).

Next, as shown in FIGS. 2 and 5A, a planarizing film 102 made of an insulating material is formed on the TFT substrate 101 (step S3 in FIG. 5A). As shown in FIG. 2, in the planarization film 102, a contact hole 102 a is formed in a portion corresponding to the upper side of the connection wiring 1015 in the TFT substrate 101, and the other portion in the Z-axis direction upper surface is substantially planarized.
Next, the anode 103 is formed on the planarizing film 102 (step S4). Here, as shown in FIG. 2, the anode 103 is divided and formed by light emitting units (subpixels), and a part thereof is connected to the connection wiring 1015 of the TFT substrate 101 along the side wall of the contact hole 102a. .

The anode 103 can be formed by, for example, forming a metal film by a sputtering method, a vacuum deposition method, or the like, and then etching in units of subpixels.
Next, a transparent conductive film 104 is formed so as to cover the upper surface of the anode 103 (step S5 in FIG. 5A). As shown in FIG. 2, the transparent conductive film 104 covers not only the upper surface of the anode 103 but also the side end surface, and also covers the upper surface of the anode 103 in the contact hole 102a. Note that, as described above, the transparent conductive film 104 is formed by forming a film using a sputtering method, a vacuum evaporation method, or the like, and then partitioning into sub-pixel units by etching.

Next, the hole injection layer 105 is formed on the transparent conductive film 104 (step S6 in FIG. 5A). As shown in FIG. 2, the hole injection layer 105 is formed so as to cover the entire surface of the transparent conductive film 104. However, the hole injection layer 105 may be formed in a state of being divided for each subpixel.
When the hole injection layer 105 is formed from a metal oxide (for example, tungsten oxide), the metal oxide film is formed using, for example, a gas composed of argon gas and oxygen gas as a gas in the chamber of the sputtering apparatus. The total pressure of the gas exceeds 2.7 [Pa] and is 7.0 [Pa] or less, and the ratio of the oxygen gas partial pressure to the total pressure is 50 [%] or more and 70 [%] or less. Furthermore, it is possible to employ film forming conditions in which the input power density per target unit area is 1 [W / cm 2] or more and 2.8 [W / cm 2] or less.

Next, a bank 106 that defines each subpixel is formed (step S7 in FIG. 5A). As shown in FIG. 2, the bank 106 is stacked on the hole injection layer 105.
The bank 106 is formed by first laminating the material layer of the bank 106 on the hole injection layer 105. This material layer is formed by a spin coating method or the like using a material including a photosensitive resin component and a fluorine component, such as an acrylic resin, a polyimide resin, and a novolac type phenol resin. In the present embodiment, as an example of the photosensitive resin material, a negative photosensitive material (product number: ZPN1168) manufactured by Nippon Zeon can be used. Next, the material layer is patterned to form openings corresponding to the respective subpixels. The opening can be formed by arranging a mask on the surface of the material layer, performing exposure, and then developing.

Next, a hole transport layer 107, an organic light emitting layer 108, and an electron transport layer 109 are sequentially stacked in each recess defined by the bank 106 on the hole injection layer 105 (step S8 in FIG. 5A). ~ S10).
The hole transport layer 107 is formed by forming a film made of an organic compound as a constituent material of the hole transport layer 107 by a printing method and baking the film. Similarly, the organic light emitting layer 108 is formed by baking after being formed by a printing method.

Next, the cathode 110 and the sealing layer 111 are sequentially stacked on the electron transport layer 109 (steps S11 and S12 in FIG. 5A). As shown in FIG. 2, the cathode 110 and the sealing layer 111 are formed so as to cover the top surface of the bank 106, and are formed on the entire surface.
Next, an adhesive resin material is applied on the sealing layer 111, and a previously prepared CF (color filter) panel is joined (step S13 in FIG. 5A). As shown in FIG. 2, the CF panel 113 bonded by the adhesive layer 112 has a color filter 1132 and a black matrix 1133 formed on the lower surface of the substrate 1031 in the Z-axis direction.

As described above, the organic EL display panel 10 as an organic EL display element is completed.
Although not shown, after the drive control unit 20 is attached to the organic EL display panel 10 to form the organic EL display device 1 (see FIG. 1), the organic EL display is subjected to an aging process. The display device 1 is completed. The aging process is performed, for example, by energizing the hole injectability before the process until the hole mobility becomes 1/10 or less. Specifically, the aging process is more than the luminance in actual use. In addition, the energization process is executed for a predetermined time so that the luminance is three times or less.

Next, a method for forming the TFT substrate 101 will be described with reference to FIGS. FIG. 6A is a schematic plan view in one step in the manufacturing process of the TFT substrate 101, and FIG. 6B is a schematic cross-sectional view showing a DD ′ cross section, and FIG. These are schematic sectional drawings which show an EE 'cross section.
As shown in FIGS. 6B and 6C, gate electrodes 1012a and 1012b are formed on the main surface of the substrate 1011 (step S21 in FIG. 5B). Regarding the formation of the gate electrodes 1012a and 1012b, a method similar to the method of forming the anode 103 can be used.

  Next, as shown in FIGS. 6B and 6C, an insulating layer 1013 is formed so as to cover the gate electrodes 1012a and 1012b and the substrate 1011 (step S22 in FIG. 5B). ). Then, as shown in FIGS. 6A to 6C, source electrodes 1014a and 1014b, drain electrodes 1014c and 1014d, and a connection wiring 1015 are formed on the main surface of the insulating layer 1013 (FIG. 5). (B) Step S23).

  Next, a photosensitive resist material film for forming a partition wall 1016 is deposited so as to cover the source electrodes 1014a and 1014b, the drain electrodes 1014c and 1014d, the connection wiring 1015, and the exposed portions 1013a and 1013b of the insulating layer 1013. Then, mask exposure and patterning are performed on the deposited photosensitive resist material film (step S25 in FIG. 5B). Thereby, the partition 1016 of the form as shown to Fig.6 (a)-FIG.6 (c) can be formed (step S26 of FIG.5 (b)). A more specific method for forming the partition wall 1016 will be described later.

Next, as shown in FIGS. 6A to 6C, an organic semiconductor ink for forming organic semiconductor layers 1017 a and 1017 b in the openings 1016 b and 1016 c defined by the partition wall 1016. 10170a and 10170b are applied (step S27 in FIG. 5B).
Next, by drying the organic semiconductor inks 10170a and 10170b (step S28 in FIG. 5B), as shown in FIG. 2, organic semiconductor layers 1017a and 1017b are formed in the openings 1016b and 1016c, respectively. (Step S29 in FIG. 5B).

Finally, as shown in FIG. 2, a passivation film 1018 is formed so as to cover the whole except for the contact region such as the opening 1016a (step S30 in FIG. 5B), and the TFT substrate 101 is completed.
6). Surface Profile When Applying Organic Semiconductor Inks 10170a and 10170b As shown in FIG. 6B, the organic semiconductor ink 10170a applied to the inside of the opening 1016b does not have a symmetric surface profile in the Y-axis direction. , Having a surface profile biased to one side (each side of arrow F3).

On the other hand, as shown in FIG. 6C, the organic semiconductor ink 10170b applied to the inside of the opening 1016c does not have a surface profile that is symmetrical in the Y-axis direction. Side surface).
Here, as shown in FIG. 6A, the bias direction (arrow F1) of the surface profile of the organic semiconductor ink 10170a applied inside the opening 1016b and the organic semiconductor ink applied inside the opening 1016c. The surface profile bias direction (arrow F2) of 10170b is vertically opposite to the imaginary axis (virtual axis parallel to the X axis) related to the arrangement of the openings 1016a, 1016b, and 1016c.

In this way, by controlling the surface profiles of the organic semiconductor inks 10170a and 10170b, the organic semiconductor inks 10170a and 10170b do not overflow to undesired locations including the opening 1016a and are mixed with each other. Is suppressed.
7). Effects that can be achieved In the organic EL display panel 10 according to the present embodiment, in the TFT substrate 101, of the side portions facing the openings 1016b and 1016c of the partition wall 1016, of the side portions facing the opening 1016b, the openings are open. Y-axis direction orthogonal to the respective inclinations of the side surface portion 1016d adjacent to the portion 1016a and the side surface portion 1016e adjacent to the opening portion 1016c and the X-axis direction in which the opening portions 1016a, 1016b, and 1016c are arranged The slope of the side surface portion 1016h existing in the side wall 1016h is steeper than the slope of the side surface portion 1016i facing the side surface portion 1016h across the opening 1016b (FIGS. 4A and 4B), and the opening 1016c. Side surface portion 1016f adjacent to the opening portion 1016b, and the opening portion with respect to the side surface portion 1016f. The slopes of the side surface portions 1016g that face each other across 1016c and the slopes of the side surface portions 1016k that exist in the Y-axis direction perpendicular to the X-axis direction in which the openings 1016a, 1016b, and 1016c are arranged are On the other hand, it is steeper than the inclination of the side surface portion 1016j facing the opening portion 1016c (FIGS. 4A and 4C). Therefore, as shown in FIGS. 6A to 6C, when the organic semiconductor inks 10170a and 10170b are applied to the insides of the openings 1016b and 1016c, the organic semiconductor inks 10170a, 10170b has a surface profile that is biased toward the side portions 1016i and 1016j, which are slopes with relatively gentle slopes.

In the present embodiment, as described above, the surface profile of the organic semiconductor inks 10170a and 10170b is controlled to a form as shown in FIGS. 6A to 6C, whereby the organic semiconductor to the opening 1016a is controlled. The overflow of the ink 10170a can be suppressed, and the mixing of the organic semiconductor ink 10170a and the organic semiconductor ink 10170b can be suppressed.
Therefore, in the TFT substrate 101 according to the present embodiment, the organic semiconductor ink 10170a is prevented from overflowing into the opening 1016a that is not the channel portion when the organic semiconductor layers 1017a and 1017b are formed at the time of manufacture. Mixing of the ink 10170a and the organic semiconductor ink 10170b can be suppressed and has high quality. And the organic EL display panel 10 provided with the TFT substrate 101 which has such an effect as a component, and also the organic EL display device 1 provided with the same have high quality.

8). Method for Forming Partition Wall 1016 in TFT Substrate 101 A method for forming the partition wall 1016 in the TFT substrate 101 will be described with reference to FIGS. 7A, 7 </ b> C, and 7 </ b> E are schematic process diagrams showing a part of processes for manufacturing a portion corresponding to the cross section shown in FIG. 4B in the manufacturing process of the TFT substrate 101. (B), (d), (f) is a schematic process diagram showing a partial process relating to the manufacture of the part corresponding to the cross section shown in FIG. 4 (c). Similarly, FIGS. 8A and 8C are schematic process diagrams showing a part of processes for manufacturing a portion corresponding to the cross section shown in FIG. 4B in the manufacturing process of the TFT substrate 101. (B), (d) is a schematic process drawing which shows the partial process which concerns on manufacture of the part corresponded to the cross section shown in FIG.4 (c).

First, as shown in FIGS. 7A and 7B, gate electrodes 1012a and 1012b, an insulating layer 1013, source electrodes 1014a and 1014b, drain electrodes 1014c and 1014d, and connection wiring 1015 are formed on a substrate 1011. Prepare an intermediate. 6 and 7, the drain electrode 1014c. Illustration of 1014d is omitted.
Next, as shown in FIGS. 7C and 7D, a photosensitive resist material film 10160 is formed so as to cover the insulating layer 1013 and the electrodes 1014a to 1014d and 1015 by using, for example, a spin coating method. accumulate.

Next, as shown in FIGS. 7E and 7F, a mask 501 having openings 501a to 501d is provided above the photosensitive resist material film 10160 at locations where the partition wall 1016 is to be formed. In this state, exposure is performed through the openings 501a to 501d of the mask 501.
Next, as shown in FIGS. 8A and 8B, at a position where a slope with a relatively steep slope is formed above the photosensitive resist material film 10161 subjected to the first exposure. A mask 502 having openings 502a and 502b is provided. In this state, the second exposure is executed through the openings 502a and 502b of the mask 502. Here, the slopes with relatively steep slopes are the side surface portions 1016d, 1016e, 1016f, 1016g, 1016h, and 1016k shown in FIGS. 4 (a) to 4 (c).

  Next, by performing development and baking, as shown in FIGS. 8C and 8D, side portions 1016d, 1016e, 1016f, 1016g, 1016h, 1016k, which are relatively steep slopes, A partition wall 1016 having side surfaces 1016i and 1016j that are relatively gentle slopes can be formed. In FIGS. 8C and 8D, the side portions 1016d, 1016e, 1016f, and 1016g are not shown for the sake of illustration.

As described above, the formation of the partition wall 1016 is completed.
[Embodiment 2]
A method for manufacturing an organic EL display panel according to Embodiment 2 will be described with reference to FIG. The structure of the organic EL display panel according to the present embodiment is the same as that of the first embodiment, and the organic EL display panel manufacturing method excluding the method of forming the partition 1016 in the TFT substrate 101 is also applicable. This is the same as in the first embodiment.

  As shown in FIGS. 9A and 9B, a mask 503 that is a halftone mask is disposed above the deposited photosensitive resist material film 10160. The mask 503 is provided with light transmitting portions 503a to 503f. Among these, the light transmission parts 503a, 503c, 503d, and 503f and the light transmission parts 503b and 503e have different light transmittances. Specifically, the light transmitting portions at locations corresponding to the side surface portions 1016d, 1016e, 1016f, 1016g, 1016h, and 1016k, which are relatively steep slopes (in FIG. 9A and FIG. 9B, the light transmitting portion is used). The light transmittance of only the portions 503b and 503e is higher than the light transmittance of the other light transmitting portions 503a, 503c, 503d, and 503f.

  In a state where the mask 503 having the above-described configuration is arranged, exposure / development is performed, and then baking is performed to form a partition wall 1016 as shown in FIGS. 4A to 4C. Can do. That is, in the places exposed through the light transmitting portions 503b, 503e,... Where the light transmittance is set to be large, the above [several numbers] than in the places exposed through the other light transmitting portions 503a, 503c, 503d, 503f. 1] to [Equation 6], the slope is steep (side portions 1016d, 1016e, 1016f, 1016g, 1016h, and 1016k in FIGS. 4A to 4C).

The subsequent steps are the same as those in the first embodiment.
The organic EL display device 1 according to the first embodiment can also be manufactured by the manufacturing method as described above.
Even using such a manufacturing method, of the side parts facing the openings 1016b and 1016c, the side parts 1016d, 1016e, 1016f, 1016g, 1016h, and 1016k are inclined with relatively steep slopes, and the side parts 1016i, 1016j can be a slope with a relatively gentle slope, and the above effect can be obtained.

[Embodiment 3]
Next, another embodiment of the method for manufacturing the organic EL display device 1 will be described with reference to FIGS. 10 and 11. FIGS. 10 and 11 show processes corresponding to the processes shown in FIGS. 7B and 7C and FIGS. 8A, 8B, 8C, and 8D.
As shown in FIGS. 10A and 10B, after a photosensitive resist material film 10160 is deposited, a mask 504 is disposed thereon. In the mask 504, openings 504a to 504d are formed corresponding to each part where the partition wall 106 is to be formed.

  Then, by performing the first exposure and development through the openings 504a to 504d of the mask 504, as shown in FIGS. 10C and 10D, a photosensitive resist material is formed at locations corresponding to the openings 504a to 504d. The film 10162 remains. Here, the side portions 10162h, 10162i, 10162j, 10162k,... Of the photosensitive resist material film 10162 all have the same inclination angle, and the side portions 1016i, 1016j in FIGS. It is the same as the tilt angle.

In the manufacturing method according to the present embodiment, baking is not performed at this point.
Next, as shown in FIGS. 11A and 11B, a mask 505 is disposed above the photosensitive resist material film 10162. The mask 505 has openings 505a, 505b,... Corresponding to locations where the side portions 1016d, 1016e, 1016f, 1016g, 1016h, 1016k, which are relatively steep slopes, are to be formed. 11 (a) and 11 (b), only the openings corresponding to the side surface portions 10161016h and 1016k are shown.

Then, the second exposure and development are performed through the openings 505a, 505b,. Thereafter, by baking, a partition wall 1016 as shown in FIGS. 11C and 11D can be formed.
Thereafter, the organic EL display device 1 can be manufactured by executing the same processes as those in the first and second embodiments.

Even using such a manufacturing method, of the side parts facing the openings 1016b and 1016c, the side parts 1016d, 1016e, 1016f, 1016g, 1016h, and 1016k are inclined with relatively steep slopes, and the side parts 1016i, 1016j can be a slope with a relatively gentle slope, and the above effect can be obtained.
[Embodiment 4]
The configuration of the TFT substrate according to Embodiment 4 of the present invention will be described with reference to FIG. FIG. 12A is a diagram corresponding to FIG. 3 in the first embodiment, and the other configurations are the same as those in the first embodiment, and thus illustration and description thereof are omitted.

As shown in FIG. 12A, in the TFT substrate according to this embodiment, four openings 2016a, 2016b, 2016c, and 2016d are defined by the partition wall 2016. Among these, connection openings 2015a and 2015d are arranged at the bottoms of the openings 2016a and 2016d, respectively, and do not function as channel parts.
In the embodiment of the present invention, as shown in FIG. 12A, the opening 2016a and the opening 2016d are not portions that function as channel portions, but one opening, for example, an opening, is used. The portion 2016d belongs to a TFT device corresponding to an adjacent subpixel, which is different from the subpixel to which the openings 2016a to 2016c correspond.

A source electrode 2014a and a drain electrode 2014c are disposed on the bottom of the opening 2016b, and a source electrode 2014b and a drain electrode 2014d are disposed on the bottom of the opening 2016c.
The source electrode 2014a and the drain electrode 2014c inside the opening 2016b, and the source electrode 2014b and the drain electrode 2014d inside the opening 2016c are both rectangular in the X-axis direction. The long sides of the source electrode 2014a and the drain electrode 2014c are opposed to each other, and the long sides of the source electrode 2014b and the drain electrode 2014d are opposed to each other.

Also, as shown in FIG. 12A, among the side surface portions 2016e, 2016f, 2016g, 2016h facing the opening portion 2016b in the partition wall 2016, the side surface portion 2016e on the opening portion 2016a side and the upper and lower side surface portions 2016g, 2016h is a slope whose slope is relatively steeper than the remaining side surface portion 2016j.
Similarly, among the side surface portions 2016i, 2016j, 2016k, and 2016m facing the opening portion 2016c in the partition wall 2016, the side surface portion 2016i on the opening portion 2016b side and the side surface portion 2016j on the opening portion 2016d side are upper and lower side surface portions. The slope is relatively steeper than 2016k and 2016m.

In the TFT substrate according to the present embodiment having the above-described configuration, when organic semiconductor ink is applied to the inside of each of the openings 2016b and 2016c, the organic semiconductor ink in the direction of the arrow F5 is formed in the opening 2016b. The surface profile is biased, and the surface profile of the organic semiconductor ink is biased in both directions of arrows F6 and F7 in the opening portion 2016c.
Therefore, also in the configuration of the present embodiment, the same effect as in the first embodiment can be obtained, and the same as in the organic EL display panel and the organic EL display device including the TFT substrate according to the present embodiment. Furthermore, it is possible to realize a high quality and a high yield in the production.

[Embodiment 5]
The configuration of the TFT substrate according to Embodiment 5 of the present invention will be described with reference to FIG. FIG. 12B is a diagram corresponding to FIG. 3 in the first embodiment, and the other configurations are the same as those in the first embodiment, and thus illustration and description thereof are omitted.
As shown in FIG. 12B, in the TFT substrate according to this embodiment, four openings 2116 a, 2116 b, 2116 c, and 2116 d are defined by the partition wall 2116. Of these, the opening portions 2116a and 2116d are each provided with connection wiring at the bottom thereof, and are not portions that function as channel portions.

  Also in the embodiment of the present invention, as shown in FIG. 12B, the opening 2116a and the opening 2116d are not portions that function as channel portions. The portion 2116d belongs to a TFT device corresponding to an adjacent subpixel, which is different from the subpixel to which the openings 2116a to 2116c correspond.

  A source electrode and a drain electrode are disposed on the bottoms of the opening 2116b and the opening 2116c. The source electrode and the drain electrode inside each of the opening 2116b and the opening 2116c have a rectangular shape that is long in the X-axis direction. In each opening 2116b and 2116c, the long sides of the source electrode and the drain electrode face each other.

As shown in FIG. 12B, of the four side surface portions 2116g, 2116h,... Facing the opening portion 2116b in the partition wall 2116, the side surface portion on the opening portion 2116a side and the side surface portion on the opening portion 2116c side are The slopes are relatively steeper than the remaining side portions 2116g and 2116h.
Similarly, of the four side surfaces 2116i,... Facing the opening 2116c in the partition wall 2116, the slope is relatively steep except for the side surface 2116i on the opening 2116b side. In other words, of the four side surface portions 2116i facing the opening portion 2116c, only the side surface portion 2116i on the side adjacent to the opening portion 2116c has a relatively gentle slope relative to the other three side surface portions. It has become.

In the TFT substrate according to the present embodiment having the above-described configuration, when organic semiconductor ink is applied to the inside of each of the openings 2116b and 2116c, the openings 2116b are oriented in both directions of arrows F8 and F9. The surface profile of the organic semiconductor ink is biased, and the surface profile of the organic semiconductor ink is biased in both directions of the arrow F10 at the opening 2116c.
Therefore, also in the configuration of the present embodiment, the same effect as in the first embodiment can be obtained, and the same as in the organic EL display panel and the organic EL display device including the TFT substrate according to the present embodiment. Furthermore, it is possible to realize a high quality and a high yield in the production.
[Embodiment 6]
The configuration of the TFT substrate according to Embodiment 4 of the present invention will be described with reference to FIG. FIG. 12C is a diagram corresponding to FIG. 3 in the first embodiment, and the other configurations are the same as those in the first embodiment, and thus illustration and description thereof are omitted.

As shown in FIG. 12C, in the TFT substrate according to this embodiment mode, four openings 2216a, 2216b, 2216c, and 2216d are defined by the partition 2216. Of these, the openings 2216a and 2216d are each provided with connection wiring at the bottom thereof, and are not portions that function as channel portions.
Also in the embodiment of the present invention, as shown in FIG. 12C, the opening 2216a and the opening 2216d are not portions that function as channel portions, but one opening, for example, an opening, is used. The portion 2216d belongs to a TFT device corresponding to an adjacent subpixel, which is different from the subpixel to which the openings 2216a to 2216c correspond.

  In addition, a source electrode and a drain electrode are disposed on the bottoms of the opening 2216b and the opening 2216c. The source electrode and the drain electrode inside each of the opening 2216b and the opening 2216c have a rectangular shape that is long in the X-axis direction. And inside each opening part 2216b, 2216c, the long side has opposed the source electrode and the drain electrode.

As shown in FIG. 12C, among the four side surfaces 2216g, 2216h,... Facing the opening 2216b in the partition wall 2216, the upper and lower side surfaces 2216g, 2216h are the other two side surfaces. The slope is relatively gentle with respect to the part.
Similarly, of the four side surface portions 2216k, 2216m,... Facing the opening 2216c in the partition wall 2216, the upper and lower side surface portions 2216k, 2216m are relatively inclined with respect to the other two side surface portions. The slope is gentle.

In the TFT substrate according to this embodiment having the above-described configuration, when the organic semiconductor ink is applied to the inside of each of the openings 2216b and 2216c, the organic semiconductor in the directions of arrows F11 and F12 is formed in the openings 2216b. The surface profile of the ink is biased, and the surface profile of the organic semiconductor ink is biased in the directions of arrows F13 and F14 at the opening 2216c.
Therefore, also in the configuration of the present embodiment, the same effect as in the first embodiment can be obtained, and the same as in the organic EL display panel and the organic EL display device including the TFT substrate according to the present embodiment. Furthermore, it is possible to realize a high quality and a high yield in the production.

[Embodiment 7]
The configuration of the TFT substrate according to Embodiment 7 of the present invention will be described with reference to FIG. FIG. 13A is a diagram corresponding to FIG. 3 in the first embodiment, and the other configurations are the same as those in the first embodiment, and thus illustration and description thereof are omitted.
As shown in FIG. 13A, the shape of the openings 3016a to 3016d of the partition wall 3016 of the TFT substrate according to this embodiment is different from that of the first embodiment. Specifically, in the first embodiment, the opening shapes of the opening portions 1016a to 1016c are rectangular, whereas in this embodiment, the opening shapes of the opening portions 3016a to 3016d are curved at each corner portion. It is configured with. For this reason, the side part facing the openings 3016a to 3016d cannot be clearly divided into a plurality of side parts.

  As in the first embodiment, connection wirings 3015a and 3015d are disposed at the bottoms of the openings 3016a and 3016d, and do not function as channel portions. Source electrodes 3014a and 3014b and drain electrodes 3014c and 3014d are disposed at the bottoms of the openings 3016b and 3016c. Similarly to the above, the insides of the openings 3016b and 3016c are portions that function as channel portions by forming an organic semiconductor layer.

  Also in the embodiment of the present invention, as shown in FIG. 13A, both the opening 3016a and the opening 3016d are not portions that function as channel portions. The portion 3016d belongs to a TFT device corresponding to an adjacent subpixel, which is different from the subpixel to which the openings 3016a to 3016c correspond.

As shown in FIG. 13A, among the side surfaces facing the opening 3016 b in the partition wall 3016, the region 3016 h is an inclined surface having a relatively gentle slope compared to other regions.
Similarly, in the side surface portion facing the opening 3016c in the partition wall 3016, the region 3016k is a slope whose slope is relatively gentle compared to other regions.
By adopting the configuration as described above, in the manufacture of the TFT substrate according to the present embodiment, when the organic semiconductor ink is applied to the insides of the openings 3016b and 3016c, the organic semiconductor applied to the inside of the openings 3016b. The ink has a surface profile that is biased downward in the Y-axis direction, and the organic semiconductor ink applied to the inside of the opening 3016c has a surface profile that is biased upward in the Y-axis direction.

Therefore, also in the configuration of the present embodiment, the same effect as in the first embodiment can be obtained, and the same as in the organic EL display panel and the organic EL display device including the TFT substrate according to the present embodiment. Furthermore, it is possible to realize a high quality and a high yield in the production.
[Embodiment 8]
The configuration of the TFT substrate according to Embodiment 8 of the present invention will be described with reference to FIG. FIG. 13B is a diagram corresponding to FIG. 3 in the first embodiment, and the other configurations are the same as those in the first embodiment, and thus illustration and description thereof are omitted.

  As shown in FIG. 13B, in the partition 3116 of the TFT substrate according to this embodiment, four openings 3116a to 3116d are opened. Although the TFT substrate as a whole has a larger number of openings, the illustration is omitted. The partition 3116 of the TFT substrate according to this embodiment is different from the first embodiment in the shapes of the openings 3116a to 3116d. Specifically, in the first embodiment, the opening shapes of the opening portions 1016a to 1016c are rectangular, whereas in the present embodiment, the opening shapes of the opening portions 3116a to 3116d are octagonal. ing.

  As in the first embodiment, connection wirings 3115a and 3115d are disposed at the bottoms of the openings 3116a and 3116d, and are portions that do not function as channel portions. Source electrodes 3114a and 3114b and drain electrodes 3114c and 3114d are disposed at the bottoms of the openings 3116b and 3116c, respectively. Similarly to the above, the openings 3116b and 3116c are portions that function as channel portions by forming the organic semiconductor layer.

  In the embodiment of the present invention as well, as shown in FIG. 13B, the opening 3116a and the opening 3116d are not portions that function as channel portions, but one opening, for example, an opening The portion 3116d belongs to a TFT device corresponding to an adjacent subpixel, which is different from the subpixel to which the openings 3116a to 3116c correspond.

As shown in FIG. 13B, of the eight side surface portions 3116h facing the opening 3116b in the partition wall 3116, the side surface portion 3116h is a slope whose inclination is relatively gentle compared to the other side surface portions. It has become.
Similarly, of the eight side surface portions 3116k facing the opening 3116c in the partition wall 3116, the side surface portion 3116k is a slope whose inclination is relatively gentle compared to the other side surface portions.

  By adopting the configuration as described above, in the manufacture of the TFT substrate according to the present embodiment, the organic semiconductor applied to the inside of the opening 3116b when applying the organic semiconductor ink to the inside of each of the openings 3116b and 3116c. The ink has a surface profile biased downward in the Y-axis direction, and the organic semiconductor ink applied inside the opening 3116c has a surface profile biased upward in the Y-axis direction.

Therefore, also in the configuration of the present embodiment, the same effect as in the first embodiment can be obtained, and the same as in the organic EL display panel and the organic EL display device including the TFT substrate according to the present embodiment. Furthermore, it is possible to realize a high quality and a high yield in the production.
In addition, about the opening shape of an opening part, it is not limited to a square or an octagon, A various shape is employable. Moreover, it is not always necessary that the opening shapes and the opening sizes are the same between the adjacent openings, and the opening shapes can be different from each other, the opening sizes can be different from each other.

[Embodiment 9]
The configuration of the TFT substrate according to the ninth embodiment of the present invention will be described with reference to FIG. FIG. 14A corresponds to a part of the TFT substrate 101 in the first embodiment.
As shown in FIG. 14A, in the TFT substrate according to this embodiment, a source electrode 4014a and a drain electrode 4014c are arranged on the bottom of an opening 4016b defined by a partition wall 4016. The source electrode 4014a and the drain electrode 4014c each have a T-shaped planar shape, and portions extending in the X-axis direction face each other.

  As shown in FIG. 14 (a), of the four side surface portions 4016h,... Facing the opening 4016b in the partition wall 4016, the side surface portion 4016h is an inclined surface having a relatively gentle inclination with respect to the other side surface portions. It has become. In FIG. 14A, only one opening 4016b is extracted and shown, but the opening arrangement and the slope setting can be performed in the same manner as in the first embodiment.

By appropriately combining the configuration of the opening 4016b as described above, the same effects as those of the first embodiment can be obtained in the configuration of the present embodiment, and the organic EL device including the TFT substrate according to the present embodiment can be obtained. Also in the EL display panel and the organic EL display device, similarly to the above, high quality and high yield in manufacturing can be realized.
[Embodiment 10]
The configuration of the TFT substrate according to the tenth embodiment of the present invention will be described with reference to FIG. FIG. 14B corresponds to a part of the TFT substrate 101 in the first embodiment.

As shown in FIG. 14B, in the TFT substrate according to this embodiment, a source electrode 4114a and a drain electrode 4114c are arranged on the bottom of the opening 4116b defined by the partition wall 4116. Both the source electrode 4114a and the drain electrode 4114c have a comb-like planar shape, and the comb-tooth portions are opposed to each other.
As shown in FIG. 14B, of the four side surface portions 4116h facing the opening 4116b in the partition wall 4116, the side surface portion 4116h is an inclined surface having a relatively gentle inclination with respect to the other side surface portions. It has become. In FIG. 14B, only one opening 4116b is extracted and shown, but the opening arrangement and the slope setting thereof can be performed in the same manner as in the first embodiment.

By appropriately combining the structure of the opening 4116b as described above, the same effect as that of the first embodiment can be obtained in the structure of the present embodiment, and the organic EL device including the TFT substrate according to the present embodiment can be obtained. Also in the EL display panel and the organic EL display device, similarly to the above, high quality and high yield in manufacturing can be realized.
[Embodiment 11]
The configuration of the TFT substrate according to Embodiment 11 of the present invention will be described with reference to FIG. FIG. 14C is a diagram corresponding to a part of the TFT substrate 101 in the first embodiment.

As shown in FIG. 14C, in the TFT substrate according to the present embodiment, the opening shape and bottom shape of the opening 4216b defined by the partition wall 4216 are both circular. The outer side shape of the source electrode 4214a and the drain electrode 4214c arranged at the bottom of the opening 4216b is circular or arcuate.
As shown in FIG. 14C, the region 4216h of the side surface facing the opening 4216b in the partition wall 4216 is an inclined surface having a relatively gentle inclination with respect to the other regions. In FIG. 14C, only one opening 4216b is extracted and represented, but the opening arrangement and the slope setting thereof can be performed in the same manner as in the first embodiment.

By appropriately combining the structure of the opening 4216b as described above, the same effect as in the first embodiment can be obtained in the structure of the present embodiment, and the organic EL device including the TFT substrate according to the present embodiment can be obtained. Also in the EL display panel and the organic EL display device, similarly to the above, high quality and high yield in manufacturing can be realized.
Further, in this embodiment mode, the planar shape of the source electrode 4214a and the drain electrode 4214c is circular or arcuate, so that “wraparound current” can be reduced.

[Embodiment 12]
The configuration of the TFT substrate according to Embodiment 12 will be described with reference to FIG. FIG. 15A corresponds to a part of the TFT substrate 101 in the first embodiment.
As shown in FIG. 15A, in the TFT substrate according to this embodiment, five openings 5016a to 5016e defined by the partition 5016 are opened. Connection wirings are provided at the bottoms of the openings 5016a and 5016e, and these openings 5016a and 5016e are portions that do not function as channel portions.

  In the present embodiment, three openings 5016b, 5016c, and 5016d spaced from each other are provided between the opening 5016a and the opening 5016e, and a source electrode and a drain electrode are provided at the bottom of each. It is arranged. The openings 5016b, 5016c, and 5016d are portions that function as channel portions by forming organic semiconductor layers (not shown).

  Also in the embodiment of the present invention, as shown in FIG. 15A, the opening 5016a and the opening 5016e are not portions that function as channel portions. The portion 5016e belongs to a TFT device corresponding to an adjacent subpixel, which is different from the subpixel to which the openings 5016a to 5016d correspond.

  Of the four side surface portions 5016f,... Facing the opening 5016b in the partition wall 5016, the side surface portion 5016f is an inclined surface having a relatively gentle inclination with respect to the other side surface portions. Similarly, of the four side surface portions 5016g,... Facing the opening 5016c in the partition wall 5016, the side surface portion 5016g has a relatively gentle slope with respect to the other side surface portions. Of the four side surface portions 5016h facing the opening 5016d, the side surface portion 5016h is an inclined surface having a relatively gentle inclination with respect to the other side surface portions.

  By adopting the configuration as described above, in the manufacture of the TFT substrate according to the present embodiment, when the organic semiconductor ink is applied inside each of the openings 5016b, 5016c, and 5016d, the inside of the opening 5016b is applied. The organic semiconductor ink has a surface profile biased upward in the Y-axis direction (arrow F15), and the organic semiconductor ink applied inside the opening 5016c has a surface profile biased downward in the Y-axis direction (arrow F16). And the organic semiconductor ink applied to the inside of the opening 5016d has a surface profile that is biased upward in the Y-axis direction (arrow F17).

Therefore, also in the configuration of the present embodiment, the same effect as in the first embodiment can be obtained, and the same as in the organic EL display panel and the organic EL display device including the TFT substrate according to the present embodiment. Furthermore, it is possible to realize a high quality and a high yield in the production.
[Embodiment 13]
The structure of the TFT substrate according to Embodiment 13 will be described with reference to FIG. FIG. 15B is a diagram corresponding to a part of the TFT substrate 101 in the first embodiment.

As shown in FIG. 15B, the TFT substrate according to this embodiment is provided with six openings 5116a to 5116f defined by the partition 5116. Connection wirings are provided at the bottoms of the openings 5116a and 5116f, and these openings 5116a and 5116f are portions that do not function as channel portions.
Also in the embodiment of the present invention, as shown in FIG. 15B, the opening 5116a and the opening 5116f are not portions that function as channel portions. The portion 5116f belongs to a TFT device corresponding to an adjacent subpixel, which is different from the subpixel to which the openings 5116a to 5116e correspond.

  In this embodiment, four openings 5116b, 5116c, 5116d, and 5116e are provided between the opening 5116a and the opening 5116f so as to be spaced from each other and arranged in a matrix. In addition, a source electrode and a drain electrode are provided. These openings 5116b, 5116c, 5116d, and 5116e are portions that function as channel portions by forming organic semiconductor layers (not shown).

  Of the four side surface portions 5116g,... Facing the opening 5116b in the partition wall 5116, the side surface portion 5116g is an inclined surface having a relatively gentle inclination with respect to the other side surface portions. Similarly, of the four side surface portions 5116h,... Facing the opening 5116c in the partition wall 5116, the side surface portion 5116h is an inclined surface having a relatively gentle slope with respect to the other side surface portions. Of the four side surface portions 5116i facing the opening portion 5116d, the side surface portion 5116i is an inclined surface having a relatively gentle inclination with respect to the other side surface portions, and faces the opening portion 5116e in the partition wall 5116. Of the two side surface portions 5116j,..., The side surface portion 5116j is an inclined surface having a relatively gentle inclination with respect to the other side surface portions.

  By adopting the above configuration, in the manufacture of the TFT substrate according to the present embodiment, when the organic semiconductor ink is applied to each of the openings 5116b, 5116c, 5116d, and 5116e, the inside of the opening 5116b is obtained. The applied organic semiconductor ink has a surface profile biased upward in the Y-axis direction (arrow F18), and the organic semiconductor ink applied inside the opening 5116c is a surface biased downward in the Y-axis direction (arrow F20). The organic semiconductor ink having a profile and applied to the inside of the opening 5116d has a surface profile biased upward in the Y-axis direction (arrow F19), and the organic semiconductor ink applied to the inside of the opening 5116e is It has a surface profile biased downward in the direction (arrow F21).

Therefore, also in the configuration of the present embodiment, the same effect as in the first embodiment can be obtained, and the same as in the organic EL display panel and the organic EL display device including the TFT substrate according to the present embodiment. Furthermore, it is possible to realize a high quality and a high yield in the production.
[Embodiment 14]
The configuration of the TFT substrate according to Embodiment 14 will be described with reference to FIG. FIG. 15C is a diagram corresponding to a part of the TFT substrate 101 in the first embodiment.

As shown in FIG. 15C, the TFT substrate according to this embodiment is provided with seven openings 5216a to 5216g defined by the partition wall 5216. Connection wirings are provided at the bottoms of the openings 5216a and 5216g. These openings 5216a and 5216g are portions that do not function as channel portions.
In the present embodiment, five openings 5216b, 5216c, 5216d, 5216e, and 5216f are provided between the opening 5216a and the opening 5216g in a state of being spaced apart from each other. A source electrode and a drain electrode are provided. These openings 5216b, 5216c, 5216d, 5214e, and 5214f are portions that function as channel portions by forming organic semiconductor layers (not shown).

  Also in the embodiment of the present invention, as shown in FIG. 15C, the opening 5216a and the opening 5216g are not parts that function as a channel part, but one opening, for example, an opening, is used. The portion 5216g belongs to a TFT device corresponding to an adjacent subpixel, which is different from the subpixel to which the openings 5216a to 5216f correspond.

  Of the four side surface portions 5216h,... Facing the opening 5216b in the partition wall 5216, the side surface portion 5216h is an inclined surface having a relatively gentle inclination with respect to the other side surface portions. Similarly, of the four side surface portions 5216i,... Facing the opening 5216c in the partition wall 5216, the side surface portion 5216i has a relatively gentle slope with respect to the other side surface portions. Among the four side surface portions 5216j, 5216k,... Facing the opening 5216d, the side surface portions 5216j, 5216k are inclined surfaces having a relatively gentle inclination with respect to the other side surface portions. Among the four side surface parts 5216m facing the 5216e, the side surface part 5216m is an inclined surface having a relatively gentle inclination with respect to the other side surface parts, and the four side surfaces facing the opening 5116f in the partition wall 5216. Of the portions 5216n,..., The side surface portion 5216n is an inclined surface having a relatively gentle inclination with respect to the other side surface portions.

  By adopting the configuration as described above, in the manufacture of the TFT substrate according to the present embodiment, when the organic semiconductor ink is applied inside each of the openings 5216b, 5216c, 5216d, 5216e, and 5216f, The organic semiconductor ink applied to the inside has a surface profile biased upward in the Y-axis direction (arrow F22), and the organic semiconductor ink applied to the inside of the opening 5216c is biased downward in the Y-axis direction (arrow F25). The organic semiconductor ink applied to the inside of the opening 5216d has a surface profile biased vertically in the Y-axis direction (arrows F23 and F26) and applied to the inside of the opening 5216e. Has a surface profile biased upward in the Y-axis direction (arrow F24) and applied to the inside of the opening 5216f. Machine semiconductor ink has a surface profile that is biased in the Y-axis direction lower side (arrow F 27).

Therefore, also in the configuration of the present embodiment, the same effect as in the first embodiment can be obtained, and the same as in the organic EL display panel and the organic EL display device including the TFT substrate according to the present embodiment. Furthermore, it is possible to realize a high quality and a high yield in the production.
[Other matters]
In the said Embodiment 1, 4-14, although the TFT substrate used for the organic electroluminescence display panel 10 was made into an example, the application object is not limited to this. For example, it can be applied to a liquid crystal display panel, a field emission display panel, or the like. Furthermore, the present invention can be applied to electronic paper.

Moreover, each constituent material of the said Embodiment 1, 4-14 was shown as an example, Comprising: It can change suitably.
Further, as shown in FIG. 2, in the organic EL display panel 10 according to the first embodiment, a top emission type configuration is taken as an example, but a bottom emission type can also be adopted. In that case, appropriate changes can be made to each material used and layout design.

  In the above description, the definition of the inclination angle of the side surface facing the opening in the TFT substrate 101 or the like has not been described, but the side surface with respect to the main surface of the underlayer is formed as shown in FIG. The angle θ can be set. In addition, as shown in FIG. 16B, when “sag” occurs in a portion near the bottom of the opening on the side surface (portion surrounded by a two-dot chain line), the “sag” is excluded. In this case, the inclination angle can be obtained.

  In the above description, four shapes are shown as an example of the opening shape of the opening defined by the partition wall. However, other shapes having various opening shapes can be employed. For example, as shown in FIG. 17 (a), a square opening shape, as shown in FIG. 17 (b), a shape in which one side is arcuate and the remaining three sides are straight lines, As shown in 17 (c), it may be circular or oval.

  Further, the present invention is not only for suppressing the mixing of the organic semiconductor ink between the adjacent openings, but for example, when it is not desired to overflow the organic semiconductor ink applied to the adjacent openings. Also, the above configuration can be adopted.

  The present invention is used for a display device including a panel such as an organic EL display panel, and is useful for realizing a high-quality TFT device even with high definition.

1. Organic EL display device 10. Organic EL display panel 20. Drive control circuit unit 21-24. Drive circuit 25. Control circuit 101. TFT substrate 102. Planarization film 102a. Contact hole 103. Anode 104. Transparent conductive film 105. Hole injection layer 106. Bank 107. Hole transport layer 108. Organic light emitting layer 109. Electron transport layer 110. Cathode 111. Sealing layer 112. Adhesive layer 113. CF substrate 501,502,503,504,505. Mask 1011, 1131. Substrate 1012a, 1012b. Gate electrode 1013. Insulating layers 1014a, 1014b, 2014a, 2014b, 3014a, 3014b, 3114a, 3114b, 4014a, 4114a, 4214a. Source electrodes 1014c, 1014d, 2014c, 2014d, 3014c, 3014d, 3114c, 3114d, 4014c, 4114c, 4214c. Drain electrodes 1015, 2015a, 2015d, 3015a, 3015d, 3115a, 3115d. Connection wiring 1016, 2016, 2116, 2216, 3016, 3116, 4016, 4116, 4216, 5016, 5116, 5216. Partitions 1016a, 1016b, 1016c, 2016a, 2016b, 2016c, 2016d, 2116a, 2116b, 2116c, 2116d, 2216a, 2216b, 2216c, 2216d, 3016a, 3016b, 3016c, 3016d, 3116a, 3116b, 3116c, 3116d, 4016 , 4216b, 5016a, 5016b, 5016c, 5016d, 5016e, 5116a, 5116b, 5116c, 5116d, 5116e, 5116f, 5216a, 5216b, 5216c, 5216d, 5216e, 5216f, 5216g. Openings 1017a, 1017b. Organic semiconductor layer 1018. Passivation film 1132. Color filter 1133. Black matrix 10160, 10161, 10162. Photosensitive resist material films 10170a, 10170b. Organic semiconductor ink

Claims (16)

Comprising first and second thin film transistor elements arranged adjacent to each other at a distance from each other;
Each thin film transistor element
A gate electrode;
A source electrode and a drain electrode, which are stacked above the gate electrode, and are arranged in parallel with each other in a direction crossing the stacking direction;
An insulating layer interposed between the gate electrode and the source and drain electrodes;
A gap between the source electrode and the drain electrode, and an organic semiconductor layer formed on the source electrode and the drain electrode and in close contact with the source electrode and the drain electrode;
With
A partition partitioning each other is formed between the organic semiconductor layer in the first thin film transistor element and the organic semiconductor layer in the second thin film transistor element,
The partition separately surrounds at least a part of each of the source electrode and the drain electrode in the first thin film transistor element and at least a part of each of the source electrode and the drain electrode in the second thin film transistor element. And the surface has liquid repellency,
An opening formed by surrounding at least a part of each of the source electrode and the drain electrode in the first thin film transistor element is defined as a first opening, and the source electrode and the drain in the second thin film transistor element When an opening configured by surrounding at least a part of each of the electrodes is a second opening,
The partition is provided with a third opening on a side different from the side adjacent to the first opening and adjacent to the first opening,
The third opening has no organic semiconductor layer formed therein and is not a part functioning as a channel part.
Each side surface facing the first opening and the second opening in the partition wall is composed of a slope with a steep slope and a slope with a gentle slope,
Of the side part facing the first opening in the partition wall, the part of the side adjacent to the third opening, and the other of the side part facing the first opening or one of the second openings. The thin film transistor device, wherein the portion on the side adjacent to the opening is a slope having a relatively steep slope. Regarding the other of the side part facing the first opening and the side part facing the second opening in the partition wall, the part adjacent to the one opening is an inclined surface having a relatively steep slope. The thin film transistor device according to claim 1, wherein: The third opening, the first opening, and the second opening are arranged in series in this order in plan view,
Of the side surface facing the first opening in the partition wall, at least a part of a portion existing in a direction intersecting the arrangement direction of the three openings is a slope having a relatively gentle slope. The thin film transistor device according to claim 1, wherein the thin film transistor device is provided. Of the side surface facing the second opening in the partition wall, at least a part of a portion existing in a direction intersecting with the arrangement direction of the three openings is a relatively gentle slope. The thin film transistor device according to claim 3. Of the side surface facing the first opening in the partition wall, the inclination is relatively out of the portion where the slope is a relatively gentle slope and the side surface facing the second opening in the partition wall. 5. The thin film transistor device according to claim 4, wherein the portion having a gentle slope exists on opposite sides of the virtual axis related to the arrangement of the three openings. Regarding the other of the side part facing the first opening or the side part facing the second opening in the partition wall, the part adjacent to the one opening is an inclined surface with a relatively gentle slope. The thin film transistor device according to claim 1, wherein: The slope of the slope is defined by the size of an angle formed between a side surface portion of the partition wall and an upper surface of an underlayer on which the partition wall is provided. A thin film transistor device according to claim 1. 8. The thin film transistor according to claim 1, wherein the slope having a relatively steep slope has a slope angle of 5 degrees or more larger than that of the slope having a relatively slow slope. 9. apparatus. The bottom of the third opening is electrically connected to one of the source electrode or the drain electrode in the first thin film transistor element or one of the source electrode or the drain electrode in the second thin film transistor element. The thin film transistor device according to any one of claims 1 to 8, wherein a wiring to be connected is formed. A thin film transistor device according to any one of claims 1 to 9,
A planarizing film provided above the thin film transistor device and having a contact hole;
A lower electrode formed on the planarizing film and on a side surface of the planarizing film facing the contact hole and electrically connected to the drain electrode or the source electrode;
An upper electrode formed above the lower electrode;
An organic light emitting layer interposed between the lower electrode and the upper electrode;
With
The organic EL display element, wherein the contact hole communicates with the third opening. An organic EL display device comprising the organic EL display element according to claim 10. Forming a first step and a second gate electrode adjacent to each other in a state of being spaced apart from each other on the substrate;
A second step of forming an insulating layer so as to cover the top of the first and second gate electrodes;
On the insulating layer, a first source electrode and a first drain electrode corresponding to the first gate electrode and spaced apart from each other in a direction intersecting the layer thickness direction of the insulating layer And a second source electrode and a second drain corresponding to the second gate electrode and spaced apart from each other in a direction intersecting the layer thickness direction of the insulating layer. A third step of arranging electrodes side by side;
A fourth step of laminating a photosensitive resist material on the insulating layer so as to cover the first and second source electrodes, the first and second drain electrodes, and a peripheral region thereof;
By patterning the laminated photosensitive resist material by mask exposure, at least a part of each of the first source electrode and the first drain electrode, the second source electrode, and the second source electrode are patterned. A fifth step of separately forming at least a part of each of the drain electrodes and forming a partition wall having liquid repellency on the surface;
An interior of a first opening configured to surround at least a portion of each of the first source electrode and the first drain electrode; and each of the second source electrode and the second drain electrode An organic semiconductor material is applied to each of the inside of the second opening formed by surrounding at least a part of the first opening and dried, and the first source electrode and the first drain electrode are then dried. A sixth step of forming a first organic semiconductor layer in close contact with the second organic semiconductor layer, and a second organic semiconductor layer in close contact with the second source electrode and the second drain electrode;
With
In the fifth step,
A third opening is also provided on the side adjacent to the first opening and spaced apart from the second opening, and on the side different from the second opening.
Each side face facing the first opening and the second opening in the partition wall is configured with a slope having a steep slope and a slope having a gentle slope,
Of the side portions facing the first opening in the partition wall, the portion of the side adjacent to the third opening and the side portion facing one of the first opening or the second opening. In order that the portion on the side where the opening is adjacent becomes a relatively steep slope,
A method of manufacturing a thin film transistor device, wherein the partition wall is formed. In the fifth step,
As for the side portion facing the other of the first opening or the second opening in the partition wall, the portion on the side adjacent to the one opening is a slope having a relatively steep slope.
The method for manufacturing a thin film transistor device according to claim 12, wherein the partition wall is formed. In the fifth step,
Of each side surface facing the first opening and the second opening in the partition wall, the exposure amount for a portion that is intended to be a slope with a relatively steep slope is defined as a slope with a relatively gentle slope. 14. The method of manufacturing a thin film transistor device according to claim 12, wherein the exposure amount is larger than an exposure amount for a portion to be formed. In the fifth step,
After exposing the photosensitive resist material to a portion where each side portion facing the first opening and the second opening in the partition wall is to be formed,
Of the side surfaces facing the first opening and the second opening in the partition wall, an exposure process is additionally performed on a portion that tends to have a relatively steep slope. 14. A method of manufacturing a thin film transistor device according to claim 12 or 13. In the fifth step,
Of the side surfaces facing the first opening and the second opening in the partition wall, the light transmittance to the portion where the slope is intended to be a relatively steep slope is relatively gentle. 14. The method of manufacturing a thin film transistor device according to claim 12, wherein the exposure is performed using a mask having a light transmittance larger than that of a portion intended to be a slope.

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