JP2013100452A - Thermal delamination type sheet - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermal delamination type sheet which does not delaminate under such a condition that oxygen concentration is low, even if exposed at relatively high temperatures, and which exhibits delamination behavior under such a condition that oxygen concentration is nearly equal to the atmosphere, at lower temperature than a temperature under the condition of low oxygen concentration.SOLUTION: This thermal delamination type sheet is configured such that: the shear bond strength to a silicon wafer after held for 0.1-60 minutes at any temperature within a temperature zone of 200-400°C, under a condition of ≤100 ppm oxygen concentration is 0.25 kg/5×5 mm or more; and the shear bond strength to a silicon wafer after held for 1-30 min at any temperature within a temperature zone of 50-300°C, under the atmospheric condition of 18-25 vol.% oxygen concentration is less than 0.25 kg/5×5 mm.

Description

  The present invention relates to a heat-peelable sheet.

  Conventionally, in the manufacturing and processing processes of electronic parts, etc., temporary fixing of various materials, surface protection of metal plates, etc. has been performed, and sheet members used for such applications are covered after the purpose of use is finished. It is required that it can be easily peeled and removed from the adherend. Conventionally, a heat-sensitive adhesive that can be peeled off by heat treatment has been disclosed as such a sheet member (see, for example, Patent Document 1). Patent Document 1 describes that the heat-sensitive adhesive can be used at a temperature up to 180 ° C.

US Pat. No. 7,202,107

  In recent years, when the oxygen concentration is low, it does not peel even when exposed to a relatively high temperature, and when the oxygen concentration is the same as the atmosphere, it peels at a lower temperature than the low oxygen concentration. Longed for. The present invention has been made in view of the above-described problems, and the object thereof is the condition that the oxygen concentration does not peel even when exposed to a relatively high temperature under the condition where the oxygen concentration is low, and the oxygen concentration is similar to that of the atmosphere. Is to provide a heat-peelable sheet that exhibits releasability at a low temperature as compared with a low oxygen concentration condition.

  The present inventors have found that the above problems can be solved by adopting the following configuration, and have completed the present invention.

That is, the heat-peelable sheet according to the present invention is
Shear adhesion to the silicon wafer after holding for 0.1-60 minutes at any temperature in the temperature range of greater than 200 ° C. and less than or equal to 400 ° C. under a condition where the oxygen concentration is 100 ppm or less is 0.25 kg / 5 × 5 mm or more,
Shear adhesive strength to silicon wafer after holding for 1-30 minutes at atmospheric temperature with oxygen concentration of 18-25% and at any temperature in the temperature range of 50 ° C. to 300 ° C. is 0.25 kg / 5 It is characterized by being less than 5 mm.

  According to the heat-peelable sheet according to the present invention, the silicon wafer is sheared after being held for 0.1 to 60 minutes at any temperature in a temperature range of 200 ° C. or more and 400 ° C. or less under an oxygen concentration of 100 ppm or less. Since the adhesive strength is 0.25 kg / 5 × 5 mm or more, it does not peel even when exposed to a relatively high temperature. On the other hand, the shear adhesive strength to the silicon wafer after being held for 1-30 minutes at any temperature in the temperature range of 50 ° C. or higher and 300 ° C. or lower under an atmospheric pressure condition where the oxygen concentration is 18-25% is 0.25 kg. Since it is less than / 5 × 5 mm, it peels at a lower temperature under the condition where the oxygen concentration is the same as that of the atmosphere, compared with the condition where the oxygen concentration is low.

  According to the present invention, when the oxygen concentration is low, the film does not peel even when exposed to a relatively high temperature, and when the oxygen concentration is the same as that of the atmosphere, the oxygen concentration is lower than the low oxygen concentration. A heat-peelable sheet that exhibits releasability can be provided.

The heat-peelable sheet of the present invention has a shear adhesive strength to a silicon wafer after being held for 0.1-60 minutes at any temperature in a temperature range of 200 ° C. or more and 400 ° C. or less under an oxygen concentration of 100 ppm or less. Is 0.25 kg / 5 × 5 mm or more, preferably 0.30 kg / 5 × 5 mm or more, and more preferably 0.50 kg / 5 × 5 mm or more. The “any temperature in the temperature range from 200 ° C. to 400 ° C.” is not particularly limited as long as it is greater than 200 ° C. and not more than 400 ° C., for example, any temperature in the temperature range from 200 to 350 ° C. , Any temperature in the temperature range of 200 to 300 ° C., and any temperature in the temperature range of 200 to 260 ° C.
The above-mentioned “conditions where the oxygen concentration is 100 ppm or less” may be any conditions as long as the oxygen concentration is 100 ppm or less, for example, 50 ppm. As long as the oxygen concentration is 100 ppm or less, for example, the entire pressure may be lower than atmospheric pressure (depressurized state) or may be about atmospheric pressure. Examples of a method for setting the pressure to about atmospheric pressure include a method in which an atmosphere of an inert gas (for example, a rare gas element such as helium, neon, or argon, or nitrogen) is used. The present inventors presume that the reason why the high shear adhesive force can be maintained even when heated to a high temperature under a condition where the oxygen concentration is low is that the heat-peelable sheet is less susceptible to oxidative degradation under a low oxygen concentration condition. doing.

  The heat-peelable sheet has an oxygen concentration of 18-25 vol% (volume%) under an atmospheric pressure condition and at any temperature in the temperature range of 50 ° C. to 300 ° C. for 0.1-60 minutes. The shear adhesive force to the silicon wafer after being held is less than 0.25 kg / 5 × 5 mm, preferably less than 0.10 kg / 5 × 5 mm, and more preferably less than 0.05 kg / 5 × 5 mm. . Under the atmospheric pressure condition where the oxygen concentration is 18-25 vol% (volume%), the shear adhesive strength of the heat-peelable sheet to the silicon wafer is less than 0.25 kg / 5 × 5 mm (preferably, 0.10 kg / 5 × 5 mm) The temperature that is less than 0.05 kg / 5 × 5 mm is not particularly limited as long as it is any temperature in the temperature range of 50 ° C. to 300 ° C., but preferably 60 ° C. More than 280 degreeC, More preferably, it exceeds 70 degreeC and is 270 degreeC or less. In this specification, the atmospheric pressure means 101325 Pa.

Shear adhesive strength to silicon wafer after holding for 0.1-60 minutes at any temperature in the temperature range of greater than 200 ° C. and less than or equal to 400 ° C. under conditions where the oxygen concentration is 100 ppm or less is 0.25 kg / 5 × 5 mm or more Therefore, even if exposed to a relatively high temperature, it does not peel off. On the other hand, the shear adhesive strength to the silicon wafer after being held for 1-30 minutes at any temperature in the temperature range of 50 ° C. to 300 ° C. under the atmospheric pressure condition where the oxygen concentration is 18-25 vol% is 0.25 kg. Since it is less than / 5 × 5 mm, it peels at a lower temperature under the condition where the oxygen concentration is the same as that of the atmosphere, compared with the condition where the oxygen concentration is low. As described above, according to the present invention, even when the oxygen concentration is low, the film does not peel even when exposed to a relatively high temperature, and in a condition where the oxygen concentration is similar to the atmosphere, the oxygen concentration is low. Thus, a heat-peelable sheet that exhibits releasability at a low temperature can be provided.
Such a heat-peelable sheet is particularly useful when it is not desired to peel the sheet under low oxygen concentration and high temperature conditions. For example, it is useful when it is desired to form a vapor deposition film (for example, sputtering or the like) on the sheet without peeling the two sheets bonded through the heat-peelable sheet.

  The heat peelable sheet preferably has a dynamic hardness of 10 or less, more preferably 9 or less, and even more preferably 8 or less. Moreover, although the said dynamic hardness is so preferable that it is small, it is 0.001 or more, for example. When the dynamic hardness is 10 or less, the adhesive force of the heat-peelable sheet to the adherend can be made sufficient.

  The heat-peelable sheet preferably has a weight reduction rate of less than 1% by weight after being immersed in a 3% by weight tetramethylammonium hydroxide aqueous solution for 5 minutes, more preferably less than 0.9% by weight. More preferably, it is less than 0.8% by weight. Moreover, although the said weight decreasing rate is so preferable that it is small, it is 0 weight% or more and 0.001 weight% or more, for example. If the weight loss after immersion in a 3% tetramethylammonium hydroxide aqueous solution for 5 minutes is less than 1% by weight, the dissolution into the 3% by weight tetramethylammonium hydroxide aqueous solution is small. In particular, the solvent resistance against tetramethylammonium hydroxide aqueous solution can be improved. The weight reduction rate of the heat-peelable sheet can be controlled by, for example, the composition of the diamine used (solubility of the diamine in tetramethylammonium hydroxide aqueous solution).

    When the heat-peelable sheet is peeled off after being bonded to the silicon wafer, the increase amount of particles of 0.2 μm or more on the surface of the silicon wafer is 10000/6 inches before being bonded to the silicon wafer. It is preferably less than a wafer, more preferably less than 9000/6 inch wafers, and even more preferably less than 8000/6 inch wafers. The increase amount of the particles is particularly preferably less than 1000/6 inch wafer, less than 900/6 inch wafer, and less than 800/6 inch wafer, as compared with before being bonded to the silicon wafer. When the amount of particles of 0.2 μm or more on the silicon wafer surface when peeled after being bonded to the silicon wafer is less than 10,000 / 6 inch wafers before being bonded to the silicon wafer, Later adhesive residue can be suppressed.

  The heat-peelable sheet of the present invention is sheared against a silicon wafer after being held for 0.1-60 minutes at any temperature in a temperature range of 200 ° C. or more and 400 ° C. or less under an oxygen concentration of 100 ppm or less. The adhesive strength was 0.25 kg / 5 × 5 mm or more, the oxygen concentration was maintained at atmospheric pressure of 18-25 vol%, and at any temperature in the temperature range of 50 ° C. to 300 ° C. for 1-30 minutes. As long as the shearing adhesive force to the subsequent silicon wafer is less than 0.25 kg / 5 × 5 mm, the forming material is not particularly limited, but polyimide resin, silicone resin, acrylic resin, fluororesin, epoxy resin, urethane resin, rubber Examples thereof include resins.

  The polyimide resin can be generally obtained by imidizing (dehydrating and condensing) a polyamic acid that is a precursor thereof. As a method for imidizing the polyamic acid, for example, a conventionally known heat imidization method, azeotropic dehydration method, chemical imidization method and the like can be employed. Of these, the heating imidization method is preferable. When the heat imidization method is employed, it is preferable to perform heat treatment under a nitrogen atmosphere or an inert atmosphere such as a vacuum in order to prevent deterioration of the polyimide resin due to oxidation.

  The polyamic acid can be obtained by charging and reacting an acid anhydride and a diamine so as to have a substantially equimolar ratio in an appropriately selected solvent.

The polyimide resin preferably has a structural unit derived from a diamine having an ether structure. The diamine having an ether structure is not particularly limited as long as it is a compound having an ether structure and having at least two terminals having an amine structure. Among the diamines having an ether structure, a diamine having a glycol skeleton is preferable. When the polyimide resin has a structural unit derived from a diamine having an ether structure, particularly a structural unit derived from a diamine having a glycol skeleton, heating the heat-peelable sheet reduces the shear adhesive strength. Can do. With respect to this phenomenon, the present inventors, when heated to a high temperature, cause the ether structure or the glycol skeleton to desorb from the resin constituting the heat-peelable sheet, and this debonding reduces the shear adhesive force. I guess that.
Note that the ether structure or the glycol skeleton is detached from the resin constituting the heat-peelable sheet, for example, FT-IR (Fourier Transform Infrared Spectroscopy) before and after heating at 300 ° C. for 30 minutes. The spectra can be confirmed by comparing the spectra of 2800 to 3000 cm ⁻¹ before and after heating.

  Examples of the diamine having a glycol skeleton include a polypropylene glycol structure and a diamine having one amino group at each end, a polyethylene glycol structure, and one amino group at each end. Examples thereof include a diamine having a polytetramethylene glycol structure and a diamine having an alkylene glycol such as a diamine having one amino group at each end. Moreover, the diamine which has two or more of these glycol structures and has one amino group in both the ends can be mentioned.

  The molecular weight of the diamine having an ether structure is preferably in the range of 100 to 5000, and more preferably 150 to 4800. When the molecular weight of the diamine having an ether structure is in the range of 100 to 5000, it is easy to obtain the release layer 5 having high adhesive strength at low temperatures and exhibiting peelability at high temperatures.

  In forming the polyimide resin, in addition to a diamine having an ether structure, another diamine having no ether structure may be used in combination. Examples of other diamines having no ether structure include aliphatic diamines and aromatic diamines. By using in combination with other diamine having no ether structure, the adhesion with the adherend can be controlled. The ratio of the diamine having an ether structure is preferably 15 to 80 parts by weight, more preferably 20 to 70 parts by weight. Here, the compounding part number of the diamine having an ether structure is the compounding part number of the diamine having an ether structure when the total compounding weight excluding the solvent is 100 parts by weight.

  Examples of the aliphatic diamine include ethylenediamine, hexamethylenediamine, 1,8-diaminooctane, 1,10-diaminodecane, 1,12-diaminododecane, 4,9-dioxa-1,12-diaminododecane, , 3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane (α, ω-bisaminopropyltetramethyldisiloxane) and the like. The molecular weight of the aliphatic diamine is usually 50 to 1,000,000, preferably 100 to 30,000.

  Examples of the aromatic diamine include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, p-phenylenediamine, and 4,4′-diaminodiphenylpropane. 3,3′-diaminodiphenylmethane, 4,4′-diaminodiphenyl sulfide, 3,3′-diaminodiphenyl sulfide, 4,4′-diaminodiphenyl sulfone, 3,3′-diaminodiphenyl sulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) -2,2- Dimethylpropane, 4,4'-diaminobenzophenone, etc. It is. The molecular weight of the aromatic diamine is usually 50 to 1000, preferably 100 to 500. In addition, in this specification, molecular weight means the value (weight average molecular weight) measured by GPC (gel permeation chromatography) and computed by polystyrene conversion.

  Examples of the acid anhydride include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride, 2,2-bis (2, 3-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) methane dianhydride Bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxyphenyl) sulfone Anhydride, pyromellitic dianhydride, ethylene glycol bis trimellitic dianhydride and the like. These may be used alone or in combination of two or more.

  Examples of the solvent for reacting the acid anhydride with the diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, N, N-dimethylformamide, and cyclopentanone. These may be used alone or in combination. Further, in order to adjust the solubility of raw materials and resins, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.

(Manufacture of heat-peelable sheet)
The heat-peelable sheet according to the present embodiment is produced as follows, for example. First, a solution containing the polyamic acid is prepared. The polyamic acid may appropriately contain an additive. Next, the solution is applied on a substrate to a predetermined thickness to form a coating film, and then the coating film is dried under a predetermined condition. Examples of the base material include metal foil such as SUS304, 6-4 alloy, aluminum foil, copper foil, Ni foil, polyethylene terephthalate (PET), polyethylene, polypropylene, fluorine-based release agent, and long-chain alkyl acrylate release agent. A plastic film, paper, or the like whose surface is coated with a release agent such as, can be used. Moreover, it does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, a spin coat etc. are mentioned. As drying conditions, for example, the drying temperature is 50 to 150 ° C. and the drying time is 3 to 30 minutes. Thereby, the heat exfoliation type sheet concerning this embodiment is obtained.

  The heat-peelable sheet can be used after being peeled from the substrate. Moreover, a heat peelable sheet | seat is good also as a heat peelable sheet | seat with a support body transferred to a support body. The heat-peelable sheet may be produced by directly applying a solution containing polyamic acid to a support to form a coating film, and then drying the coating film under predetermined conditions. When used as a heat-peelable sheet with a support, the rigidity is stronger than when the heat-peelable sheet is used alone, which is preferable in terms of reinforcing the adherend.

  The support is not particularly limited, and examples thereof include compound wafers such as silicon wafers, SiC wafers, and GaAs wafers, glass wafers, metal foils such as SUS, 6-4 Alloy, Ni foil, and Al foil. In the case of adopting a round shape in plan view, a silicon wafer or a glass wafer is preferable. Moreover, when it is a rectangle by planar view, a SUS board or a glass plate is preferable. The support in the heat-peelable sheet with support can be used as it is for manufacturing various semiconductor devices.

  The said support body may be used individually and may be used in combination of 2 or more type. The thickness of the support is usually about 100 μm to 20 mm.

  The application of the heat-peelable sheet is not particularly limited, but can be used, for example, in the manufacturing process of a semiconductor device. More specifically, for example, it can be used in a step of encapsulating a semiconductor chip with a resin or a step of forming a conductive through hole (TSV) penetrating a silicon chip. In addition, when sealing with resin, it can be attached to the back side of the lead frame and used for the purpose of preventing resin leakage. It can also be used for processing glass members (for example, lenses), color filters, touch panels, and power modules.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in this example are not intended to limit the gist of the present invention only to those unless otherwise limited.

Example 1
In an atmosphere under a nitrogen stream, aromatic diamine oligomer (Ihara Chemical Co., Elastomer 1000, molecular weight: 1229.7) 12.89 g, 4,4 ′ in 68.33 g of N, N-dimethylacetamide (DMAc). -Polyamino acid solution A was obtained by mixing 7.08 g of diaminodiphenyl ether (DDE, molecular weight: 200.2) and 10.0 g of pyromellitic dianhydride (PMDA) and mixing them at 70 ° C. After cooling to room temperature (23 ° C.), the polyamic acid solution A was applied onto the mirror surface of an 8-inch silicon wafer with a spin coater and dried at 90 ° C. for 20 minutes to obtain a support A with polyamic acid. The support A with a polyamic acid was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a polyimide film (thermally peelable sheet) having a thickness of 30 μm, thereby obtaining a support A with a thermally peelable sheet.

(Example 2)
In an atmosphere under a nitrogen stream, 16.29 g of polyetherdiamine (manufactured by Heinzmann, D-400, molecular weight: 422.6), 16,4′- in 138.6 g of N, N-dimethylacetamide (DMAc). Diaminodiphenyl ether (DDE, molecular weight: 200.2) 8.37 g and pyromellitic dianhydride (PMDA) 10.0 g were mixed and reacted at 70 ° C. to obtain a polyamic acid solution B. After cooling to room temperature (23 ° C.), the polyamic acid solution B was applied onto the mirror surface of an 8-inch silicon wafer with a spin coater and dried at 120 ° C. for 10 minutes to obtain a support B with polyamic acid. The support B with a polyamic acid was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a 10 μm-thick polyimide film (thermally peelable sheet) to obtain a support B with a thermally peelable sheet.

(Example 3)
In an atmosphere under a nitrogen stream, polyether diamine (manufactured by Heinzmann, D-2000, molecular weight: 1990.8) 18.07 g, 4,4 ′ in 141.7 g of N-methyl-2-pyrrolidone (NMP) -Polyamino acid solution C was obtained by mixing 7.36 g of diaminodiphenyl ether (DDE, molecular weight: 200.2) and 10.0 g of pyromellitic dianhydride (PMDA) at 70 ° C. and reacting them. After cooling to room temperature (23 ° C.), the polyamic acid solution C was applied onto the mirror surface of an 8-inch silicon wafer with a spin coater and dried at 100 ° C. for 12 minutes to obtain a support C with polyamic acid. The support C with a polyamic acid was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a polyimide film (thermally peelable sheet) having a thickness of 15 μm, thereby obtaining a support C with a thermally peelable sheet.

(Comparative Example 1)
In an atmosphere under a nitrogen stream, 9.18 g of 4,4′-diaminodiphenyl ether (DDE, molecular weight: 200.2) and pyromellitic dianhydride in 364.4 g of N, N-dimethylacetamide (DMAc) A product (PMDA) 10.0 g was mixed and reacted at 70 ° C. to obtain a polyamic acid solution D. After cooling to room temperature (23 ° C.), the polyamic acid solution D was applied onto the mirror surface of an 8-inch silicon wafer with a spin coater and dried at 150 ° C. for 10 minutes to obtain a support D with polyamic acid. The support D with a polyamic acid was heat-treated at 400 ° C. for 2 hours in a nitrogen atmosphere to form a 10 μm-thick polyimide film (thermally peelable sheet) to obtain a support D with a thermothermally peelable sheet.

(Measurement of shear adhesion to silicon wafer)
A silicon wafer chip of 5 mm square (thickness 500 μm) is placed on a heat-peelable sheet formed on a support (silicon wafer) and laminated under conditions of 60 ° C. and 10 mm / s, and then a shear tester (Dage The shear adhesive strength between the heat-peelable sheet and the silicon wafer chip was measured using a Dage 4000). The conditions for the shear test were as follows. The results are shown in Table 1. In addition, in order to control oxygen concentration, the shear tester was put in the glove box and evaluated.
<Condition 1 of shear test>
Oxygen concentration: 55ppm
Total pressure in atmosphere: 1 atm (101325 Pa)
Stage temperature: 240 ° C
Time from holding on stage to starting shearing adhesive strength measurement: 5 minutes Measurement speed: 500 μm / s
Measurement gap: 100 μm
<Condition 2 of shear test>
Oxygen concentration: 95ppm
Total pressure in atmosphere: 10 torr (133.22 Pa) (N ₂ substitution)
Stage temperature: 300 ° C
Time from holding on stage to starting shearing adhesive strength measurement: 1 minute Measurement speed: 500 μm / s
Measurement gap: 100 μm
<Condition 3 of shear test>
Oxygen concentration: 21 vol%
Total pressure in atmosphere: 1 atm (101325 Pa)
Stage temperature: 200 ° C
Time from holding on stage to starting shearing adhesive strength measurement: 30 minutes Measurement speed: 500 μm / s
Measurement gap: 100 μm

(Measurement of weight loss when immersed in tetramethylammonium hydroxide aqueous solution)
First, the support body was peeled from the support body with a heat peelable sheet which concerns on an Example and a comparative example. Next, the peeled heat-peelable sheet was cut into a 100 mm square and its weight was measured. Next, it was immersed for 5 minutes in 3 weight% tetramethylammonium hydroxide aqueous solution (TMAH) of 23 degreeC. After sufficiently washing with water, drying was performed at 150 ° C. for 30 minutes. Then, the weight was measured and set as the weight after immersion.
The weight reduction rate was determined by the following formula. The results are shown in Table 1.
(Weight reduction rate (% by weight)) = [1-((weight after immersion) / (weight before immersion))] × 100

(Adhesive residue evaluation)
First, the support body was peeled from the support body with a heat peelable sheet which concerns on an Example and a comparative example. Next, the heat-peelable sheets of Examples and Comparative Examples were processed into a size of 6 inches in diameter, and laminated on a wafer of 8 inches in diameter at 60 ° C. and 10 mm / s. Then, it was left for 1 minute and peeled off. Using a particle counter (SFS6200, manufactured by KLA), the number of particles of 0.2 μm or more on the surface of an 8-inch diameter wafer was measured. Further, in comparison with the case before lamination, the case where the amount of increase in particles after peeling was less than 1000/6 inch wafer was evaluated as ◯, and the case where it was 1000 particles / 6 inch or more was evaluated as x. The results are shown in Table 1.

(Peeling temperature)
About the heat-peelable sheet | seat which concerns on an Example and a comparative example, it was set as the size of 30 mm square, and 10 mm square (thickness: 2 mm) glass was affixed on the heat-peelable sheet | seat using the laminator. Using this sample, the glass was heated with a high temperature observation device (product name: SK-5000) manufactured by Sanyo Seiko under the conditions of a heating rate of 4 ° C./min and a measurement temperature of 20 to 350 ° C. Was confirmed to peel off from the heat-peelable sheet. The results are shown in Table 1.

(Gas visual temperature)
About the heat-peelable sheet | seat which concerns on an Example and a comparative example, it was set as the size of 30 mm square, and 10 mm square (thickness: 2 mm) glass was affixed on the heat-peelable sheet | seat using the laminator. Using this sample, it was heated with a high-temperature observation device (product name: SK-5000) manufactured by Sanyo Seiko under the conditions of a heating rate of 4 ° C./minute and a measurement temperature of 20 to 350 ° C. The temperature at which smoke was generated was confirmed. The results are shown in Table 1.

(Dynamic hardness)
About the heat-peelable sheet according to the example, using a hardness meter (product name: DUH-210) manufactured by Shimadzu Corporation and an indenter (trade name: Triangular115, manufactured by Shimadzu Corporation), the load is removed at a load of 0.5 mN. A load test was performed and dynamic hardness was measured. The results are shown in Table 1.

Claims (1)

The shear adhesive strength to the silicon wafer after being held for 0.1-60 minutes at any temperature in the temperature range of greater than 200 ° C. and less than or equal to 400 ° C. under a condition where the oxygen concentration is 100 ppm or less is 0.25 kg / 5 × 5 mm or more,
Shear adhesive strength to a silicon wafer after holding for 1-30 minutes at atmospheric temperature with an oxygen concentration of 18-25 vol% and at any temperature in a temperature range of 50 ° C. or higher and 300 ° C. or lower is 0.25 kg / 5 A heat-peelable sheet characterized by being less than 5 mm.