JP2013093588A - Manufacturing method of reflective mask and manufacturing method of semiconductor integrated circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing technique of a semiconductor integrated circuit device utilizing a defect correction technique of a reflective mask using the extreme-ultraviolet (EUV) light having a wavelength near 13.5 nm as an exposure light source.SOLUTION: On an absorption layer 203 near an opening pattern 204 where a phase defect 211 is occurring, an auxiliary pattern 301 having an opening diameter finer than the opening pattern 204 is formed. The auxiliary pattern 301 is used for adjusting the exposure light quantity when transferring the opening pattern 204 to a photoresist film on a wafer.

Description

  The present invention relates to a manufacturing technique of a semiconductor integrated circuit device having a lithography process using a reflective mask, and in particular, a reflective mask that uses extreme ultra violet (EUV) light having a wavelength of around 13.5 nm as exposure light. The present invention relates to a technique that is effective when applied to the manufacture of a semiconductor integrated circuit device using the defect correction technique.

  A semiconductor device such as a semiconductor integrated circuit device irradiates a mask, which is an original plate on which a circuit pattern is drawn, with exposure light, and transfers the circuit pattern onto a semiconductor wafer (hereinafter simply referred to as a wafer) via a reduction optical system. It is mass-produced by repeating the optical lithography process.

  In recent years, the miniaturization of semiconductor devices has progressed, and methods for increasing the resolution by shortening the exposure wavelength of photolithography have been studied. That is, until now, ArF lithography using argon fluoride (ArF) excimer laser light with a wavelength of 193 nm has been developed, but EUV light with a wavelength of 13.5 nm, which is much shorter than that, is used. Development of EUV lithography has been underway. The EUV light is also called soft X-ray.

  In EUV lithography, a transmission mask cannot be used because of light absorption of a substance. Therefore, for example, a multilayer film reflective substrate using reflection (Bragg reflection) by a multilayer film in which a Mo (molybdenum) layer and a Si (silicon) layer are stacked is used as a mask blank for EUV lithography. This multilayer film reflection is a reflection utilizing a kind of interference.

  A reflective mask for EUV lithography includes a multilayer film blank obtained by depositing the multilayer film on a substrate made of quartz glass or low thermal expansion glass, and a circuit pattern composed of an absorption layer formed on the multilayer film blank. It consists of This reflective mask is a mask using Bragg reflection, and the wavelength of exposure light is as short as 13.5 nm, so the film thickness of the multilayer film has a slight variation of about a fraction of the wavelength. Even if it occurs, a local difference in reflectivity occurs, and a defect called a phase defect occurs during transfer. Therefore, a reflective mask for EUV lithography has a large qualitative difference in terms of defect transfer when compared with a conventional transmissive mask.

  Although the wavelength region of EUV light is 9 nm to 15 nm, when applied to lithography applications, it is necessary to ensure the reflectivity of a reflective mask or a reflective lens optical system. Are mainly used. However, it is not limited to this wavelength. For example, wavelengths such as 9.5 nm have been studied, and any wavelength within the above range (9 nm to 15 nm) can be applied to lithography applications.

  In addition, in EUV lithography, even when contamination with a slight film thickness of several nanometers adheres to the surface of the mask, the reflectance of the exposure light at that portion decreases, resulting in poor resolution, insufficient transfer accuracy, exposure surface. So-called contamination defects that cause variations in internal dimensions are also a problem.

  An example of defects in a reflective mask for EUV lithography is shown in FIG. In the figure, 201 is a reflective mask substrate, 202 is a reflective layer composed of a multilayer film, 203 is an absorbing layer, 204 is an opening pattern of the absorbing layer, 205 is a black defect remaining, 210 is a particle, 211 is a phase defect, 220 Is contamination. Here, FIG. 1A shows an example of a normal black defect, FIG. 1B shows an example of a phase defect, and FIG. 1C shows an example of a contamination defect.

  The phase defect and the contamination defect are defects in which the reflectance of the mask reflecting surface is lowered, that is, the exposure amount is reduced, and the classification belongs to the black defect. That is, when the phase defect 211 is present in the opening pattern 204 formed in the absorption layer 203 as shown in FIG. 2A, the photoresist film 231 on the semiconductor wafer 230 is shown in FIG. When the transferred image is viewed, the transfer pattern 233 in the defective portion is smaller in size or crushed than the normal transfer pattern 232 having no defect. Further, as shown in FIG. 3 (a cross-sectional view taken along line AA in FIG. 2B), in the transfer pattern 233 of the defective portion, the photoresist film 231 cannot be completely removed to the bottom.

  Conventionally, as a defect correction method when a black defect remains inside the opening pattern, scraping is performed by a method of irradiating FIB (focused ion beam) or EB (electron beam), or a mechanical method using a needle or the like. The method is used. Further, as a defect correction method when a phase defect or a contamination defect occurs inside the opening pattern, as shown in FIG. 4, the periphery of the opening pattern 204 is irradiated by FIB or EB irradiation or a mechanical method using a needle. A method of compensating for a decrease in exposure amount by removing the absorption layer 203 and enlarging the area of the opening pattern 204 is used.

  In addition, the defect correction technique of the reflective mask for EUV lithography is described in JP-T-2002-532738 (Patent Document 1).

Japanese translation of PCT publication No. 2002-532738

  A conventional defect correction method for a reflective mask has a problem that when the type and size of a defect cannot be specified, the amount of enlargement of the area of the opening pattern cannot be specified. For example, when there is a phase defect inside the opening pattern, the cause of the phase defect is the particle 210a having the size as shown in FIG. 5A or the particle 210b having the size as shown in FIG. It cannot be specified from the transfer result to the photoresist film, and the positions of the particles 210a and 210b cannot be specified.

  Therefore, in the actual defect correction process, it is necessary to transfer the pattern to the photoresist film for evaluation each time while gradually increasing the area of the opening pattern, and to repeat this operation until the desired dimensional accuracy is obtained. It was. In particular, EUV lithography is an in-vacuum exposure and the pellicle is difficult, so it is not preferable to remove the mask from the projection exposure system. For this reason, a large load is applied to the work of moving the mask between the mask correction department and the transfer exposure department many times, which is a great obstacle to the execution of the defect correction work.

  An object of the present invention is to provide a defect correction technique suitable for phase defects and contamination defects of a reflective mask for EUV lithography.

  Another object of the present invention is to provide a manufacturing technique of a semiconductor integrated circuit device using the defect correcting technique.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

A method for manufacturing a semiconductor integrated circuit device of the present invention includes:
(A) preparing a semiconductor wafer having a photoresist film formed on the main surface;
(B) placing the semiconductor wafer on a wafer stage of a projection exposure system having a reflective optical system;
(C) A first layer formed at a predetermined position of the projection exposure system by a reflective layer that reflects light of a predetermined wavelength and an absorption layer that is formed on the reflective layer and absorbs light of the predetermined wavelength. A reflective mask having a second pattern formed by one pattern and a reflective layer that reflects light of the predetermined wavelength and an absorption layer that is formed on the reflective layer and absorbs light of the predetermined wavelength Supplying, and
(D) exposing a photoresist film of the semiconductor wafer with light of the predetermined wavelength based on the first and second patterns of the reflective mask;
A method of manufacturing a semiconductor integrated circuit device comprising:
The absorbing layer forming the first pattern of the reflective mask is formed around the first opening pattern, the first opening pattern corresponding to the first pattern exposing the reflective layer, And having an auxiliary pattern different from the first opening pattern,
The absorption layer forming the second pattern of the reflective mask has a second opening pattern that exposes the reflective layer and corresponds to the second pattern, and the second opening pattern has a second opening pattern around the second opening pattern. It does not have an auxiliary pattern different from the second opening pattern.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  It is possible to provide a defect correction technique suitable for phase defects and contamination defects of a reflective mask for EUV lithography.

  Thereby, miniaturization of the semiconductor integrated circuit device can be promoted.

(A), (b), (c) is sectional drawing which shows the example of a defect of the reflective mask for EUV lithography. (A) is a top view which shows the phase defect example of the reflective mask for EUV lithography, (b) is a top view which shows the transfer image to the photoresist film of the mask pattern shown to (a). It is the sectional view on the AA line of FIG. It is sectional drawing which shows the phase defect correction method of the reflective mask for EUV lithography performed conventionally. (A), (b) is sectional drawing which shows the phase defect example of the reflective mask for EUV lithography. It is the schematic of an EUV exposure apparatus. It is a flowchart explaining the defect correction method of the reflective mask which is embodiment of this invention in order of a process. (A) is a top view which shows a board | substrate when the phase defect has arisen inside the opening pattern formed in the absorption layer of a reflective mask, (b) is the sectional view on the AA line of (a). is there. (A) is a top view which shows the defect correction method of the reflective mask which is embodiment of this invention, (b) is the BB sectional drawing of (a). (A) is a top view which shows the defect correction method of the reflective mask which is embodiment of this invention, (b) is CC sectional view taken on the line of (a). (A) is a plan view showing the substrate when the phase defect is offset with respect to the opening pattern, (b) is a plan view showing a transfer image of the mask pattern shown in (a) onto the photoresist film, (C) is a top view which shows the defect correction method of the reflective mask which is embodiment of this invention. (A) A plan view of a substrate having a groove-type opening pattern, (b) is a plan view showing a transfer image of the mask pattern shown in (a) onto a photoresist film, and (c) is a plan view of the present invention. It is a top view which shows the defect correction method of the reflective mask which is a form. (A) is a symbol diagram of the 2-input NAND gate circuit, (b) is a circuit diagram of the 2-input NAND gate circuit, and (c) is a layout plan view of the 2-input NAND gate circuit. (A)-(f) is a top view which shows the design pattern of the mask used for manufacture of the 2 input NAND gate circuit shown in FIG. (A)-(f) is a top view of the mask manufactured based on the design mask pattern shown in FIG. It is a layout plan view of a 2-input NAND gate circuit. (A)-(e) is principal part sectional drawing of the semiconductor wafer which shows the manufacturing method of a 2-input NAND gate circuit. (A)-(e) is principal part sectional drawing of the semiconductor wafer which shows the manufacturing method of the 2 input NAND gate circuit following FIG. (A)-(f) is principal part sectional drawing of the semiconductor wafer which shows the manufacturing method of the 2 input NAND gate circuit following FIG.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted. Also, in the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary. In the drawings for explaining the following embodiments, hatching may be given even in plan views for easy understanding of the configuration.

(Embodiment 1)
First, the features of EUV exposure will be described with reference to the schematic diagram of the EUV exposure apparatus shown in FIG.

  In EUV lithography, exposure is performed by an optical system called an off-telecentric optical system. An off-telecentric optical system is an optical system in which exposure to a wafer is performed by light beams that are slightly inclined rather than light beams that are perpendicular to the main surface of the wafer.

  As shown in the figure, the main part of the EUV exposure apparatus includes an EUV light 1101, a reflective optical system 1102, a reflective mask 1103, an optical system box 1104, a reflective projection optical system 1105, and a wafer stage 1106. The EUV light 1101 having a wavelength of 13.5 nm incident from an EUV light source (not shown) is changed in direction by the reflective optical system 1102 and irradiated to the reflective mask 1103. The EUV light 1101 irradiated onto the reflective mask 1103 is irradiated onto the wafer stage 1106 via a reflective projection optical system 1105 composed of a plurality of multilayer mirrors. The pattern formed on the reflective mask 1103 is imaged on the wafer 1107 disposed on the wafer stage 1106 by this EUV exposure.

  The exposure system including the reflective optical system 1102, the reflective mask 1103, and the reflective projection optical system 1105 is surrounded by an optical system box 1104, and the inside of the exposure system is evacuated so as to have a particularly high degree of vacuum compared to the surroundings. Has been. This is to protect the reflective optical system 1102 from contamination. An opening 1108 is provided on the wafer stage 1106 side of the optical system box 1104. The configuration of the reflective optical system 1102 is an optical system configuration with the central axis removed in order to prevent light from being blocked by the reflective lens. This is a contrivance for obtaining a wide exposure field, all of which have a reflection optical system configuration. Therefore, the EUV light 1101 is incident on the reflective mask 1103 with an inclination of about 5 ° to 6 ° in a certain axis, and is slightly inclined with respect to the main surface of the wafer 1107 disposed on the wafer stage 1106. An image is formed at 1112.

  Next, with reference to FIG. 7, the defect correction method for the reflective mask according to this embodiment will be described in the order of steps.

  First, a wafer having a photoresist film formed on the main surface is prepared, and the reflective mask pattern is transferred to the photoresist film using the EUV exposure apparatus shown in FIG. Next, a defective portion of the pattern transferred to the photoresist film is extracted by wafer appearance inspection or the like (step 1). The extraction of the defective transfer portion is not limited to the appearance inspection method, and may be performed using, for example, an AIMS (Aerial Image Measurement System). The target transfer defect here is a defect caused by a defect of the reflective mask, but it is a comparison of multiple shots to determine whether the defect is caused by a defect of the reflective mask or a wafer transfer such as a wafer process. Consider and classify.

  Next, it is determined whether or not the content of the transfer failure is a non-opening failure or a (opening) size minute failure (step 2). When the defect content is neither a non-opening defect nor an (opening) size minute defect, that is, a white defect, normal white defect processing is performed (step 4). As described above, the phase defect and the contamination defect are a kind of black defect, but the white defect is a defect caused by the lack of the absorption layer. Therefore, in the case of a white defect, the defect is corrected by depositing carbon, metal or the like on the lacked portion of the absorption layer by a normal method.

  On the other hand, if the content of the transfer failure is a non-opening failure or a (opening) size minute failure, the underexposure amount of the transfer pattern at the defective portion is calculated (step 3). As a method for calculating the underexposure amount, a method using a calibration curve, a table, or the like based on the difference between the size of the opening size when the transfer is performed with the appropriate exposure amount and the size of the original opening size when there is no defect. There are a method of calculating from an exposure amount at which a desired dimension can be obtained by increasing a dose during wafer transfer, or a method of calculating from an AIMS signal intensity.

  Next, the position and size of the fine auxiliary pattern (compensation pattern) formed around the opening pattern having the defective portion are determined by calculation so as to compensate for the insufficient exposure amount. Alternatively, it may be determined with reference to a table prepared in advance (step 5).

  8A is a plan view showing the substrate 201 when the phase defect 211 is generated inside the opening pattern 204 formed in the absorption layer 203 of the reflective mask, and FIG. 8B is a plan view of FIG. It is AA sectional view taken on the line of a). Here, reference numeral 202 in the figure is a reflective layer, and 210 is a particle that is a source of a phase defect 211. The opening pattern 204 is, for example, a pattern for forming a hole pattern such as a contact hole or a through hole that connects wirings of integrated circuits. The reflective layer 202 is composed of, for example, a multilayer film in which a Mo layer and a Si layer are laminated, and the absorption layer 203 includes a tantalum nitride (TaN) film or a chromium (Cr) film as a main component. The substrate 201 is made of quartz glass or low thermal expansion glass. Here, the case where the particle 210 that is the source of the phase defect 211 is attached to the surface of the substrate 201 is shown, but the particle 210 may exist in the middle of the reflective layer 202. Also, there may be pit defects on the substrate 201.

  When the phase defect 211 as described above is generated inside the opening pattern 204, in this embodiment, FIG. 9A and FIG. 9B (sectional view taken along line BB in FIG. 9A). As shown in FIG. 6, an auxiliary pattern 301 having an opening diameter smaller than that of the opening pattern 204 is formed in the absorption layer 203 in the vicinity of the opening pattern 204 in which the phase defect 211 is generated (step 6). The auxiliary pattern 301 is a pattern for adjusting the amount of exposure light when the opening pattern 204 is transferred to the photoresist film on the wafer.

  The position where the auxiliary pattern 301 is arranged varies depending on exposure conditions such as NA (Numerical Aperture) and coherency of the projection lens, characteristics of the photoresist film, and the like. Is done. Therefore, in the case of the 4x exposure system, the light is disposed on the mask at a position about 20 nm to 40 nm away from the opening pattern 204. For example, as shown in FIG. 9A, four auxiliary patterns 301 are arranged around the opening pattern 204, and the dimension of the opening pattern 204 and the distance from the opening pattern 204 to the auxiliary pattern 301 are 120 nm on the mask, respectively. In the case of 20 nm, the distance between the two auxiliary patterns 301 and 301 arranged on both sides of the opening pattern 204 is 160 nm. The phase defect 211 having such a size is detected at the blanks stage by the phase defect inspection apparatus. It can be detected relatively easily. Therefore, if such a phase defect inspection is performed at the blank stage, the phase defect 211 extends to the main part of the auxiliary pattern 301, so that there is no problem that exposure compensation cannot be performed as expected.

  In the case of EUV lithography, the main cause of the proximity effect of the transfer pattern is not optical interference as in photolithography, but so-called blur such as acid diffusion of resist. In the case of optical interference, the influence of the surrounding pattern is complicated, so the size of the opening size of the auxiliary pattern has a complicated behavior depending on the size and positional relationship of the surrounding opening pattern. In the case of EUV lithography, Due to the blur control, the size of the opening size of the auxiliary pattern 301 becomes a monotonous behavior. For this reason, when the defect correction technique of the present invention is applied to EUV lithography, the auxiliary pattern table is relatively simple.

  In order to form the auxiliary pattern 301 in the absorption layer 203, the absorption layer 203 is shaved by FIB (focused ion beam) or EB (electron beam), the absorption layer 203 is removed by a combination of EB lithography and etching, a needle or the like A method such as scraping the absorbing layer 203 by a mechanical method using the above is used.

  Through the above steps, the defect correction of the reflective mask according to the present embodiment is completed (step 7). Even if a phase defect that cannot be easily identified by mask inspection occurs due to the above-described defect correction method, the defect can be easily corrected, so that a desired transfer pattern can be formed defect-free. It becomes.

  Although the phase defect correction method has been described here, a contamination defect can also be corrected by the same method as described above. That is, even if a contamination film is attached to the surface of the absorption layer on the mask, the contamination film on the region is also removed when the auxiliary pattern is opened. Compensation is possible. In addition, even in the case of a black defect caused by a normal absorption layer remaining, the above defect correction method for forming an auxiliary pattern in the vicinity of the opening pattern can be applied. This defect correction method has a feature that defect repair and defect compensation are efficient because defect repair can be performed without the trouble of grasping the details of the remaining absorption layer.

  Further, as described above, in EUV lithography, exposure light is incident on the mask at an angle, but the absorption layer on the mask has a certain thickness, so that the exposure light is applied to the opening pattern and auxiliary pattern. When is incident, a shadow is formed at the end of the pattern. For this reason, when a plurality of auxiliary patterns are arranged around the aperture pattern, the amount of light reflected from the auxiliary pattern having the same width varies depending on the relationship between the incident light incident direction and the direction of the auxiliary pattern.

  As a countermeasure, as shown in FIG. 10, when the incident direction of the exposure light is the direction indicated by the arrow in the drawing, it is arranged so as to be orthogonal to the width of the auxiliary pattern 301a arranged in parallel to the direction. The width of the auxiliary pattern 301b may be changed. In this way, the amount of reflected light from the auxiliary pattern 301a is the same as the amount of reflected light from the auxiliary pattern 301b, so that it is possible to prevent positional deviation and shape distortion of the opening pattern transferred to the photoresist film. The difference between the width of the auxiliary pattern 301a and the width of the auxiliary pattern 301b varies depending on the size of the opening pattern, resist blur, etc., but is usually in the range of 10% to 50%.

  FIG. 11A shows a case where the phase defect 211 is offset with respect to the opening pattern 204, that is, a part of the phase defect 211 is located inside the opening pattern 204 and the remaining part is located outside the opening pattern 204. It is a top view which shows the board | substrate 201 in the case of being. In such a case, the transfer image onto the photoresist film 231 is as shown in FIG. That is, the transfer pattern 235 corresponding to the opening pattern 204 of the mask is a pattern that is smaller than the transfer pattern 234 in the normal case and offset to a position away from the position where the phase defect 211 exists.

  If the position offset as described above is detected by visual inspection of the photoresist film, etc., the position of the auxiliary pattern on the mask and the size of the opening pattern are adjusted based on the amount of positional deviation, and the center of the peak intensity is Adjust to the center position of the transfer pattern. Specifically, as shown in FIG. 11C, by arranging the auxiliary pattern 301 only in the vicinity of the phase defect 211, the deformation of the transfer pattern due to the position offset can also be corrected.

  In the present embodiment, the case where the present invention is applied to a hole pattern in which the effect of the present invention is most exhibited has been described. In the case of a hole pattern, (1) the pattern ratio is small, and defect correction can be performed efficiently. (2) Although extremely fine phase defects are also fatal transfer defects, This is because it is difficult to detect defects at the blanks stage or the mask stage. However, the integrated circuit pattern to which the present invention is applied is not limited to a hole pattern such as a contact hole or a through hole, and can be applied to general dark field fine patterns. An example thereof will be described with reference to FIG.

  FIG. 12A shows a mask pattern layout at the design stage, and reference numeral 206 in the drawing denotes a groove-shaped opening pattern. FIG. 12B shows a transfer pattern 236 when the opening pattern 206 is transferred to the photoresist film 231 on the wafer. The portion where the pattern width (opening width) indicated by reference numeral 237 in the drawing is reduced is shown in FIG. This is a transfer defect portion resulting from a black defect in the mask.

  When the transfer defect as described above is detected by visual inspection or the like of the photoresist film 231, an auxiliary pattern 302 is formed in the vicinity of the defect on the corresponding mask, as shown in FIG. By doing in this way, it becomes possible to correct the mask defect not only for the hole pattern but also for the groove-shaped opening pattern 206.

  As described above, according to the defect correction method of the present embodiment described above, not only a normal black defect due to the remaining absorption layer but also a phase defect and a contamination defect that are difficult to detect on the mask and specify the size, etc. On the other hand, since it is possible to perform defect correction with high accuracy, there is an effect that defect-free EUV lithography can be performed. In particular, in EUV lithography using a reflective mask, the fine phase defect on the mask and the contamination defect of the ultrathin film are problematic, and thus the effect of the defect correction method shown in this embodiment is great.

  In the case of a hole pattern, a phase defect having a very fine size of about 20 nm generated in the mask also becomes a transfer defect, but it is difficult to detect such a phase defect. Even if such a fine phase defect can be detected in the blank stage, in the case of a hole pattern with a small aperture ratio, the rate of becoming a fatal defect, that is, the probability that the defect touches the aperture pattern is low. Inspection is not efficient. Therefore, the present method capable of such defect correction is effective in supplying defect-free masks efficiently, reducing costs, and shortening TAT.

(Embodiment 2)
In the present embodiment, an example will be described in which the mask defect correction technique described in the first embodiment is applied to the manufacture of an actual semiconductor integrated circuit device. FIG. 13 shows a two-input NAND gate circuit ND, where (a) is a symbol diagram thereof, (b) is a circuit diagram thereof, and (c) is a layout plan view thereof. In FIG. 13 (c), a portion surrounded by an alternate long and short dash line is a unit cell 110, two nMOS transistors Qn formed on the n ⁺ type diffusion layer 111n on the surface of the p-type well region PW, and an n-type It consists of two pMOS transistors Qp formed on the p ⁺ type diffusion layer 111p on the surface of the well region NW.

  In order to fabricate the two-input NAND gate circuit ND, pattern transfer onto the wafer was repeated using masks M1 to M6 as shown in FIGS. 14 and 15 in sequence. FIG. 14 shows a designed mask pattern, and FIG. 15 shows a mask manufactured based on the designed mask pattern. Among these, the masks M4 to M6 on which a fine pattern requiring high dimensional accuracy is formed are masks for EUV lithography, and phase defects generated in a part of the pattern are corrected by the method of the first embodiment. Shows the case. On the other hand, the masks M1 to M3 on which a pattern having a relatively large size is formed are ordinary photolithography masks.

  14 and 15, reference numeral 101d attached to the mask M4 indicates a reflection layer, and reference numeral 102d indicates an absorption layer. Reference numerals 101e, 101e ', 101f, and 101f' attached to the masks M5 and M6 indicate opening patterns formed in the reflective layer, and reference numerals 102e and 102f indicate absorption layers.

  Here, the opening pattern 101e and the opening pattern 101e 'of the mask M5 are similar hole patterns, but since there is a phase defect inside the opening pattern 101e', the auxiliary pattern 103e is disposed around the opening pattern 101e '. On the other hand, no auxiliary pattern is arranged around the opening pattern 101e having no phase defect. Similarly, the opening pattern 101f and the opening pattern 101f 'of the mask M6 are similar groove patterns, but since there is a phase defect inside the opening pattern 101f', the auxiliary pattern 103f is disposed around the opening pattern 101f '. On the other hand, no auxiliary pattern is arranged around the opening pattern 101f having no phase defect.

  Hereinafter, the steps until the nMOS transistor Qn and the pMOS transistor Qp are formed will be described with reference to FIGS. 17 and 18 are cross-sectional views taken along the line DD of FIG. 16, which is the same layout plan view as FIG. 13 (c).

  First, as shown in FIG. 17A, an insulating film 115 made of, for example, silicon oxide is formed on a wafer S (W) made of p-type single crystal silicon by an oxidation method, and then nitrided on the insulating film 115. A silicon film 116 is deposited by a CVD (Chemical Vapor Deposition) method, and a photoresist film 117 is formed on the silicon nitride film 116.

  Next, as shown in FIG. 17B, the photoresist film 117 is exposed and developed using the mask M1 on which the pattern shown in FIG. Then, a resist pattern 117a is formed.

  Next, as shown in FIG. 17C, after the silicon nitride film 116 and the insulating film 115 are dry-etched using the resist pattern 117a as a mask, the resist pattern 117a is removed, and then the silicon nitride film 116 is used as a mask. The groove 118 is formed by dry etching the surface of the wafer S (W).

  Next, as shown in FIG. 17D, after an insulating film 119 made of, for example, silicon oxide is deposited on the wafer S (W) by the CVD method, the insulating film 119 is shown in FIG. 17E. Is planarized by a chemical mechanical polishing (CMP) method, and then the silicon nitride film 116 and the insulating film 115 are removed, thereby forming an element isolation groove SG on the surface of the wafer S (W). Here, element isolation is performed by the element isolation trench SG, but the present invention is not limited to this. For example, element isolation may be performed by a field insulating film formed by a LOCOS (Local Oxidization of Silicon) method.

  Next, as shown in FIG. 18A, exposure / development processing is performed using a mask M2 in which the pattern shown in FIG. 15B is formed on the photoresist film formed on the wafer S (W). By applying, a resist pattern 117b is formed. Subsequently, phosphorus or arsenic is ion-implanted into the wafer S (W) in a region not covered with the resist pattern 117b, thereby forming an n-type well region NW.

  Next, after removing the resist pattern 117b, as shown in FIG. 18B, a mask M3 in which the pattern shown in FIG. 15C is formed on the photoresist film formed on the wafer S (W). The resist pattern 117c is formed by performing exposure / development processing using. Subsequently, boron is ion-implanted into the wafer S (W) in a region not covered with the resist pattern 117c, thereby forming a p-type well region PW.

  Next, as shown in FIG. 18C, after a gate insulating film 120 made of silicon oxide or the like having a thickness of about 2 nm is formed on the surface of the wafer S (W), a polycrystalline silicon film is formed on the gate insulating film 120. A conductive film 112 made of a laminated film of tungsten and tungsten is deposited by a CVD method.

  Next, as shown in FIG. 18 (d), a mask M4 on which the pattern shown in FIG. 15 (d) is formed is prepared, and the photoresist film formed on the conductive film 112 is exposed and developed. Thus, a resist pattern 117d is formed. Subsequently, the conductive film 112 and the gate insulating film 120 are dry-etched using the resist pattern 117d as a mask, thereby forming the gate electrode 112A of the nMOS transistor Qn and the gate electrode 112A of the pMOS transistor Qp.

Next, as shown in FIG. 18E, phosphorus or arsenic is ion-implanted into the p-type well region PW to form an n ⁺ -type diffusion layer 111n that constitutes the source and drain of the nMOS transistor Qn. By ion-implanting boron into the type well region NW, the p ⁺ type diffusion layer 111p constituting the source and drain of the pMOS transistor Qp is formed. Through the steps so far, the nMOS transistor Qn and the pMOS transistor Qp are completed.

  Next, the wiring forming process will be described with reference to FIG. FIG. 19 is a cross-sectional view taken along the line DD in FIG. 16 as in FIGS. 17 and 18.

  First, as shown in FIG. 19A, an interlayer insulating film 121a made of silicon oxide or the like is deposited on top of the nMOS transistor Qn and the pMOS transistor Qp by the CVD method, and then a photoresist film (FIG. 19) is formed on the interlayer insulating film 121a. Apply (not shown).

  Next, as shown in FIG. 19B, a mask M5 is prepared, and a photoresist pattern on the interlayer insulating film 121a is exposed and developed to form a resist pattern 117e. The mask M5 used here is the one shown in FIG. 15E, and an opening pattern 101e is formed in the absorption layer 102e above the reflective layer 202.

Subsequently, by dry etching the interlayer insulating film 121a and the resist pattern 117e as a mask to form a contact hole CNT on top of the ^{n +} -type diffusion layer 111n and ^{the p +} -type diffusion layer 111p.

  Next, after removing the resist pattern 117e, as shown in FIG. 19C, a metal film of tungsten (W), tungsten alloy, copper (Cu) or the like is embedded in the contact hole CNT, and then the metal film The metal plug 113 is formed inside the contact hole CNT by planarizing the surface of the contact hole CNT by the CMP method.

  Next, as shown in FIG. 19D, after an interlayer insulating film 121b made of silicon oxide or the like is deposited on the interlayer insulating film 121a by a CVD method, a photoresist film (not shown) is formed on the interlayer insulating film 121b. Apply. Subsequently, a mask M6 is prepared, and a resist pattern 117f is formed by exposing and developing the photoresist film on the interlayer insulating film 121b. The mask M6 used here is as shown in FIG. 15F, and an opening pattern 101f is formed in the absorption layer 102f above the reflective layer 202. Next, the interlayer insulating film 121b is dry etched using the resist pattern 117f as a mask.

  Next, after removing the resist pattern 117f, as shown in FIG. 19E, a metal film such as copper is deposited by sputtering, and then the surface of the metal film is planarized by CMP. Wirings 114A, 114B, and 114C are formed.

  Next, as shown in FIG. 19F, after an interlayer insulating film 121c made of silicon oxide or the like is deposited on the wirings 114A, 114B, and 114C by the CVD method, the wiring 114C is used using an EUV lithography mask (not shown). Through holes VIA are formed in the upper interlayer insulating film 121c. Thereafter, the second-layer wiring 122 connected to the wiring 114C through the through hole VIA is formed, thereby completing the 2-input NAND gate. It goes without saying that other circuits such as NOR gate circuits can be formed by changing the shapes and positions of the opening patterns 101e and 101f formed in the masks M5 and M6.

  Of the masks M4 to M6 for EUV lithography used in the above manufacturing process, the dark field masks (M5 and M6) in which the absorption layers 102e and 102f are formed in the field portion are the same as the defect correction method of the first embodiment. It is the applied mask. On the other hand, with respect to the mask M4 which is a bright field mask, phase defect inspection is carefully performed at the blank stage, and only defect-free blanks are sent to the mask manufacturing process.

  In the mask M5 on which the contact hole opening pattern 101e is formed, a fine phase defect that cannot be detected by an actinic phase defect inspection apparatus causes a transfer defect, so that defect-free blanks selection at the blank stage cannot be performed. For example, even if a fine phase defect having a height of about 2 nm and a width of about 20 nm is generated on the mask, the contact hole formation accuracy is adversely affected, but such a size defect cannot be detected. However, by applying the defect correction method of the first embodiment, even the mask M5 in which such a fine phase defect has occurred can be repaired. Moreover, the defect can be relieved by obtaining the mask defect compensation amount by one transfer evaluation and forming the auxiliary pattern according to the guideline.

  Further, in the case of the mask M6 in which the wiring opening pattern 101f is formed, the phase defect on the mask that can become a transfer defect can be detected by careful inspection using an actinic phase defect inspection apparatus, If such careful inspection and selection are performed at the stage, a defect-free mask can be obtained, but it becomes an expensive mask that is extremely costly. Further, even if there is a phase defect, even if it is in a place where it does not lead to a transfer defect, it is discarded, so that the sorting efficiency at the blank stage is lowered. However, such a problem can be solved by using the mask M6 to which the defect correction method of the first embodiment is applied.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  The present invention can be applied to defect correction of a reflective mask for EUV lithography.

101a, 101b, 101c, 101d Reflective layer 102a, 102b, 102c, 102d, 102e, 102f Absorbing layer 101e, 101e ', 101f, 101f' Opening pattern 103e, 103f Auxiliary pattern 110 Unit cell 111n n ⁺ type diffusion layer 111p p ⁺ Type diffusion layer 112 Conductive film 112A Gate electrode 113 Metal plugs 114A, 114B, 114C Wiring 115 Insulating film 116 Silicon nitride film 117 Photoresist film 117a, 117b, 117c, 117d, 117e, 117f Resist pattern 118 Groove 119 Insulating film 120 Gate insulation Films 121a, 121b, 121c Interlayer insulating film 122 Second layer wiring 201 Substrate 202 Reflective layer 203 Absorbing layer 204 Opening pattern 205 Black defect remaining 210, 210a, 210b Particles 11 Phase defect 220 Contamination 230 Semiconductor wafer 231 Photoresist film 232, 233, 234, 235, 236 Transfer pattern 237 Transfer defect portion 301, 302 Auxiliary pattern 1101 EUV light 1102 Reflective optical system 1103 Reflective mask 1104 Optical system box 1105 Reflective projection optical system 1106 Wafer stage 1107 Semiconductor wafer 1108 Opening 1112 Beam CNT Contact holes M1 to M6 Mask NW n-type well region PW p-type well region Qn nMOS transistor Qp pMOS transistor SG Element isolation trench S (W) Semiconductor wafer VIA Through hole

Claims (13)

Manufacturing method of semiconductor integrated circuit device having the following steps:
(A) a step of preparing a semiconductor wafer on which a photoresist film is formed on the main surface;
(B) placing the semiconductor wafer on a wafer stage of a projection exposure system having a reflective optical system;
(C) Formed at a predetermined position of the projection exposure system by a reflection layer that reflects Extreme Ultra Violet light and an absorption layer that is formed on the reflection layer and absorbs the extreme ultraviolet light. Supplying a reflective mask having an opening pattern;
(D) exposing the photoresist film of the semiconductor wafer with the extreme ultraviolet light based on the opening pattern of the reflective mask;
(E) after the step (d), extracting a defective portion of the opening pattern transferred to the photoresist film;
(F) When the content of the defect extracted in the step (e) is a non-opening defect of the opening pattern or a small opening size defect, the opening pattern is formed on the absorption layer in the vicinity of the opening pattern. Forming an auxiliary pattern having an opening diameter that is finer than that and is not transferred by itself.   2. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein the wavelength of the extreme ultraviolet light is 13.5 nm.   2. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein the reflective layer of the reflective mask includes a multilayer film composed of a molybdenum (Mo) layer and a silicon (Si) layer as main components, The method of manufacturing a semiconductor integrated circuit device, wherein the absorption layer of the reflective mask contains a tantalum nitride (TaN) film or a chromium (Cr) film as a constituent element.   2. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein the defect in the opening pattern is a phase defect, a contamination defect, or a black defect.   2. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein the opening pattern is a hole pattern.   2. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein the opening pattern is a groove pattern. (A) preparing a reflective mask having an opening pattern formed by a reflective layer that reflects extreme ultraviolet light and an absorbing layer that is formed on the reflective layer and absorbs the extreme ultraviolet light;
(B) detecting a non-opening defect of the opening pattern or a minute defect of the opening dimension;
(C) forming an auxiliary pattern having an opening diameter that is finer than the opening pattern and is not transferred to the absorbing layer in the vicinity of the detected defective opening pattern;
A method for producing a reflective mask, comprising:   8. The method of manufacturing a reflective mask according to claim 7, wherein the wavelength of the extreme ultraviolet light is 13.5 nm.   8. The method of manufacturing a reflective mask according to claim 7, wherein the reflective layer of the reflective mask includes a multilayer film composed of a molybdenum layer and a silicon layer as a main component, and the absorbing layer of the reflective mask. Includes a tantalum nitride film or a chromium film as a constituent element.   8. The method of manufacturing a reflective mask according to claim 7, wherein the defect in the opening pattern is a phase defect, a contamination defect, or a black defect.   8. The method of manufacturing a reflective mask according to claim 7, wherein the opening pattern is a hole pattern.   8. The method of manufacturing a reflective mask according to claim 7, wherein the opening pattern is a groove pattern.   A method for manufacturing a semiconductor integrated circuit device, comprising: manufacturing a semiconductor integrated circuit device using the reflective mask obtained by the manufacturing method according to claim 7.

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