JP2013089642A - Semiconductor device manufacturing method and semiconductor device manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus, which can remove air bubbles without damaging a semiconductor wafer when the air bubbles are entrapped in an adhesive after a covering material is attached to one surface of the semiconductor wafer via the adhesive.SOLUTION: A semiconductor device manufacturing method includes: performing an air bubble movement step of moving air bubbles 4 to a covering material 2 side by application of energy to an adhesive 3 such as expansion/contraction of the adhesive 3, application of oscillation to the adhesive 3 and application of heat to the adhesive 3 in the case where the air bubbles 4 are entrapped in the adhesive 3 after a film 2 is attached to one surface 1a of a semiconductor wafer 1 via the adhesive 3; and subsequently performing a defoaming step of causing the air bubbles 4 in the adhesive 3 to be exposed to an atmospheric air and removing the air bubbles 4 by detaching the film 2 or by forming an opening 2a on the film 2.

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus used therefor.

  Patent Document 1 discloses an ultrasonic defoaming method in which after a coating solution such as a photographic photosensitive material is coated on a support, bubbles contained in the coating solution are defoamed and removed. In this ultrasonic defoaming method, the coating solution applied to the support is heated to lower the viscosity of the coating solution, and the coating solution is irradiated with ultrasonic waves to float bubbles in the coating solution to the gas-liquid interface. This is a method of discharging.

  Further, in Patent Document 2, after two glass substrates are bonded together with an adhesive, the bonded glass substrates are passed between a pair of upper and lower rolls to discharge bubbles between the glass substrates to the outside. A bonding apparatus for bonding a single glass substrate is disclosed.

JP 2010-179234 A JP 2007-84740 A

  By the way, when manufacturing a semiconductor device, the process of sticking the coating | covering material which covers one surface of a semiconductor wafer on one surface of a semiconductor wafer is performed. This covering material is temporarily affixed to the semiconductor wafer, and is peeled off from the semiconductor wafer after the purpose is achieved. As this process, for example, for the purpose of protecting the back surface of the semiconductor wafer when plating on the surface of the semiconductor wafer, a process of attaching a protective material to the back surface of the semiconductor wafer, or for performing a back grinding process of the semiconductor wafer The process etc. which affix a support body to the surface of a semiconductor wafer are mentioned.

  In the step of attaching the covering material to one surface of the semiconductor wafer, for example, after applying an adhesive to one surface of the semiconductor wafer, the covering material is attached to the one surface of the semiconductor wafer via the adhesive, and then the adhesive is cured. However, there is a problem that bubbles are likely to be mixed into the adhesive between the semiconductor wafer and the covering material when the covering material is attached to one surface of the semiconductor wafer via the adhesive.

  If air bubbles are mixed in the adhesive between the semiconductor wafer and the coating material, an unbonded part is formed, or when the coating material is peeled off from the semiconductor wafer, the adhesive remains based on the air bubbles. There arises a problem that it is necessary to remove the adhesive. Furthermore, there is a problem that the semiconductor wafer is broken during the removal operation of the remaining adhesive or the semiconductor wafer is soiled because it is difficult to completely remove the remaining adhesive.

  For this reason, when performing the process of affixing a coating material on one surface of a semiconductor wafer, it is necessary to remove (degas) air bubbles in the adhesive before the adhesive is cured.

  Then, in the manufacturing method of the semiconductor device which has the process of affixing a covering material on one surface of a semiconductor wafer via an adhesive, the following two methods are used as a method of removing bubbles mixed in when the covering material is affixed: Conceivable.

  That is, as a first method, after applying an adhesive on one surface of a semiconductor wafer, the ultrasonic defoaming method described in Patent Document 1 is used to lift and remove bubbles in the adhesive at the gas-liquid interface. Then, it is conceivable to apply a covering material to one surface of the semiconductor wafer.

  However, even if the bubbles in the adhesive are removed, the coating material is subsequently attached to one surface of the semiconductor wafer, and thus the bubbles are mixed into the adhesive when the coating material is applied. For this reason, the first method is not preferable.

  Further, as a second method, it is considered that after the adhesive is attached to one surface of the semiconductor wafer via an adhesive, bubbles in the adhesive are removed using the adhesive device described in Patent Document 2. It is done.

  However, since the semiconductor wafer is fragile and the semiconductor wafer is warped, when the semiconductor wafer is passed between a pair of upper and lower rolls, stress that stretches the warped semiconductor wafer flatly is applied to the semiconductor wafer. The wafer may be destroyed. For this reason, the second method is not preferable.

  In view of the above points, the present invention removes air bubbles without destroying the semiconductor wafer when air bubbles are mixed in the adhesive after applying a coating material on one surface of the semiconductor wafer via an adhesive. An object of the present invention is to provide a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus.

In order to achieve the above object, in the invention described in claim 1,
After applying the adhesive (3) to one surface (1a) of the semiconductor wafer (1), the step of attaching the covering material (2) to the one surface (1a) of the semiconductor wafer (1) via the adhesive (3). In a manufacturing method of a semiconductor device having
Bonding is performed when bubbles (4) are mixed in the adhesive (3) after the covering material (2) is pasted on the one surface (1a) of the semiconductor wafer (1) via the adhesive (3). A bubble moving step of applying energy to the agent (3) to move the bubbles (4) to the coating material (2) side;
After the bubble moving step, the bubble (4) in the adhesive (3) is exposed to the atmosphere by peeling off the coating (2) or by forming the opening (2a) in the coating (2). And a defoaming step for removing it.

  According to this method, since the above-described bubble moving step and defoaming step are performed after the covering material is attached to one surface of the semiconductor wafer, the bubbles in the adhesive generated when the covering material is attached are removed. be able to.

  Further, according to this method, energy for moving bubbles is added in the bubble moving step, and in the defoaming step, the covering material is peeled off or an opening is formed in the covering material. It is possible to suppress the stress that stretches flatly on the semiconductor wafer as much as possible, and bubbles in the adhesive can be removed without destroying the semiconductor wafer.

  In invention of Claim 1, after forming an opening part (2a) in covering material (2) by a defoaming process like invention of Claim 2, for example, from opening part (2a) It is preferable to suck the bubbles (4).

  In order to apply energy to the adhesive (3) in the bubble moving step in the invention described in claim 1, as described in claim 3, the covering material (2) is peeled off or returned to the original position. Extending or contracting the adhesive (3), applying vibration to the adhesive (3), applying heat to the adhesive (3), the semiconductor with the coating material (2) side of the semiconductor wafer (1) as the center Examples include at least one selected from revolving the wafer (1) and applying a centrifugal force to the adhesive (3).

  In the invention described in claim 1, as in the invention described in claim 4, before the defoaming step, the semiconductor wafer (1) is centered on the central portion of one surface (1a) of the semiconductor wafer (1). It is preferable to collect a plurality of bubbles (4) in the adhesive (3) at the center by rotating and applying a centrifugal force to the adhesive (3). In addition, before and after the bubble moving step and before the bubble moving step are included before the defoaming step.

  According to this, since the bubbles are collected in the central portion of the semiconductor wafer, the removal position of the bubbles can always be fixed to the central portion of the semiconductor wafer. For this reason, when the defoaming step is performed, it is not necessary to detect the position of the bubble and move the removal position of the bubble, so that the defoaming step can be automated.

  Since the semiconductor wafer made of SiC is fragile as described in claim 5, the invention described in claim 1 can be applied particularly to a method of manufacturing a semiconductor device using a semiconductor wafer made of SiC. preferable.

In the invention according to claim 6, after the covering material (2) is attached to one surface (1a) of the semiconductor wafer (1) via the adhesive (3), the bubbles (4) in the adhesive (3) An apparatus for manufacturing a semiconductor device for removing
An energy addition mechanism (12, 13, 14) for applying energy to the adhesive (3) in order to move the bubbles (4) in the adhesive (3) to the coating material (2) side;
In order to remove the bubble (4) moved to the coating material (2) side by contacting with the atmosphere, the device is characterized by including a mechanism (14) for peeling the coating material (2).

In addition, the invention according to claim 7 is a method in which after the covering material (2) is attached to the one surface (1a) of the semiconductor wafer (1) via the adhesive (3), the bubbles ( 4) A semiconductor device manufacturing apparatus for removing
An energy addition mechanism (12, 13, 14) for applying energy to the adhesive (3) in order to move the bubbles (4) in the adhesive (3) to the coating material (2) side;
A mechanism (20) for forming an opening (2a) in the covering material (2) in order to remove the bubbles (4) in the adhesive (3) moved to the covering material (2) side by contacting with the atmosphere. It is characterized by comprising.

  Since the apparatus described in claims 6 and 7 is used when the method described in claim 1 is performed, the same effect as that of the invention described in claim 1 can be obtained.

  According to an eighth aspect of the present invention, in the apparatus of the seventh aspect, the mechanism (20) for forming the opening (2a) in the covering material (2) further includes a bubble (4) from the opening (2a). It has the function to suck. By using this apparatus, the method according to claim 2 can be carried out.

  The invention according to claim 9 is the apparatus according to any one of claims 6 to 8, wherein the energy adding mechanism is a mechanism for extending or contracting the adhesive (3) by peeling off the covering material (2) or returning it to the original position. (14), a mechanism (12) for imparting vibration to the adhesive (3), a mechanism (13) for applying heat to the adhesive (3), and a semiconductor with the coating material (2) side of the semiconductor wafer (1) directed toward the center. It is at least one selected from a mechanism for revolving the wafer (1) and applying a centrifugal force to the adhesive (3). By using this apparatus, the method described in claim 3 can be performed.

  A tenth aspect of the present invention is the apparatus according to any one of the sixth to ninth aspects, wherein the plurality of bubbles (4) in the adhesive (3) are collected at the center of one surface (1a) of the semiconductor wafer (1). And a mechanism for rotating the semiconductor wafer (1) around the center and applying a centrifugal force to the adhesive (3). By using this apparatus, the method described in claim 4 can be performed.

  In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

It is a figure which shows schematic structure of the manufacturing apparatus of the semiconductor device in 1st Embodiment. It is sectional drawing of the semiconductor wafer which shows the bubble movement process in 1st Embodiment. It is sectional drawing of the semiconductor wafer which shows the defoaming process in 1st Embodiment. It is a figure which shows schematic structure of the manufacturing apparatus of the semiconductor device in 2nd Embodiment. It is sectional drawing of the semiconductor wafer which shows the defoaming process in 2nd Embodiment. It is a top view of the semiconductor wafer which shows the bubble movement process in 3rd Embodiment. It is sectional drawing of the semiconductor wafer which shows the defoaming process in 3rd Embodiment. It is a figure which shows schematic structure of the manufacturing apparatus of the semiconductor device in 4th Embodiment. It is sectional drawing of the semiconductor wafer which shows the bubble movement process in 4th Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

(First embodiment)
In FIG. 1, the schematic block diagram of the defoaming apparatus 10 in this embodiment is shown. This defoaming apparatus 10 corresponds to a semiconductor device manufacturing apparatus of the present invention.

  As shown in FIG. 1, the defoaming device 10 includes a stage 11, a vibration generator 12 and a heater 13 attached to the stage 11.

  On the surface of the stage 11, a semiconductor wafer 1 on which an organic resin film 2 is attached is mounted. The film 2 is a covering material that covers the one surface 1 a of the semiconductor wafer 1, and is attached to the one surface 1 a of the semiconductor wafer 1 via an adhesive 3. The semiconductor wafer 1 is fixed on the surface of the stage 11 with the one surface 1a facing up and the other surface 1b on the opposite side facing down.

  The vibration generator 12 is a mechanism that applies vibration to the adhesive 3 applied to the semiconductor wafer 1 on the stage 11. As the vibration generator 12, for example, an ultrasonic generator can be adopted. In this case, the adhesive 3 is vibrated by irradiating the adhesive 3 with ultrasonic waves generated by the ultrasonic generator.

  The heater 13 is a mechanism for applying heat to the adhesive 3 applied to the semiconductor wafer 1 on the stage 11.

  The defoaming device 10 further includes a film moving arm 14, a film pressing arm 15, a light source 16, a camera 17, an image processing unit 18, and a control unit 19.

  The film moving arm 14 is a mechanism for peeling the film 2 from the semiconductor wafer 1 or returning it to the original position by moving while holding the end of the film 2. The film moving arm 14 in FIG. 1 grips and holds the film 2 at its tip, but it may also be configured to suck and hold the film 2 at its tip. The moving direction of the film moving arm 14 is the direction of the arrow in FIG. 1, that is, the direction inclined by a predetermined angle with respect to the vertical direction of the one surface 1a of the semiconductor wafer 1.

  The vibration generator 12, the heater 13, and the film moving arm 14 correspond to an energy application mechanism that applies energy to the adhesive 3 in order to move the bubbles 4 in the adhesive 3 to the coating material 2 side.

  The film pressing arm 15 presses and fixes the film 2 so that the film 2 attached to the one surface 1a of the semiconductor wafer 1 is not displaced.

  The light source 16 irradiates light to the semiconductor wafer 1 to which the film 2 on the stage 11 is attached in order to find bubbles in the adhesive 3.

  The camera 17 is a detection unit that detects the number and position of bubbles in the adhesive 3. The camera 17 acquires an image of the adhesive 3 through the film 2, and the acquired image is processed by the image processing unit 18 to identify the number and position of bubbles. Note that the number and position of bubbles may be specified by human eyes instead of the camera 17. Information on the number and position of bubbles identified by the image processing unit 18 is input to the control unit 19.

  The control unit 19 controls the vibration generator 12, the heater 13, the film moving arm 14, and the film pressing arm 15. The control unit 19 operates the vibration generator 12 and the heater 13 in order to move the bubbles in the adhesive 3 to the film 2 side, and uses the information on the number and position of bubbles input from the image processing unit 18. Based on this, the film moving arm 14 is operated so that the moved bubbles are removed by touching the atmosphere.

  Next, in the semiconductor device manufacturing method including the step of attaching the film 2 to the one surface 1a of the semiconductor wafer 1 via the adhesive 3, the bubbles in the adhesive 3 mixed when the film 2 is attached are removed. A method will be described. The removal of the bubbles is performed in the atmosphere using the defoaming apparatus 10 described above.

  First, the semiconductor wafer 1 is mounted on the stage 11 of the defoaming apparatus 10, the adhesive 3 is applied to the one surface 1 a of the semiconductor wafer 1, and then the film 2 is attached to the one surface 1 a of the semiconductor wafer 1 through the adhesive 3. wear. As the semiconductor wafer 1, for example, one made of SiC is used, and as the adhesive 3, for example, an ultraviolet curable resin is used. Note that the film 2 may be attached at a place other than the defoaming device 10. In this case, the semiconductor wafer 1 after the film 2 is attached is mounted on the stage 11 of the defoaming device 10.

  Then, after the film 2 is attached to the one surface 1a of the semiconductor wafer 1 via the adhesive 3, when bubbles are mixed in the adhesive 3, the energy is artificially applied to the adhesive 3 to A bubble moving step for moving the film to the film 2 side is performed. The schematic diagram of a bubble moving process is shown to Fig.2 (a)-(c). In the present embodiment, all three of FIGS. 2A to 2C are performed.

  Specifically, as shown in FIG. 2A, the film 2 is peeled off from the semiconductor wafer 1 or returned to the original position by using the film moving arm 14. When the film 2 is peeled off, the adhesive 3 is pulled in a state of sticking to the film 2, and when the film 2 is peeled off from the adhesive 3, the adhesive 3 contracts. In this way, by expanding and contracting the adhesive 3, the bubbles 4 in the adhesive 3 are floated to the film 2 side.

  Further, as shown in FIG. 2 (b), by applying vibration 5 from the vibration generator 12 to the adhesive 3, the bubbles 4 are floated to the film 2 side.

  Furthermore, as shown in FIG.2 (c), the heat | fever 6 is added to the adhesive agent 3 from the heater 13, the viscosity of the adhesive agent 3 is lowered | hung, and the bubble 4 floats to the film 2 side.

  Subsequently, after the bubble moving step, a defoaming step is performed in which bubbles located on the film 2 side in the adhesive 3 are removed by being exposed to the atmosphere. The schematic diagram of a defoaming process is shown to Fig.3 (a), (b).

  Specifically, as shown in FIG. 3A, the film 4 is peeled off from the adhesive 3 by using the film moving arm 14, thereby opening the bubbles 4 to the atmosphere and removing them. At this time, based on the number and position information of the bubbles 4 acquired by the camera 17 and the image processing unit 18, the film moving arm 14 is controlled by the control unit 19, and the portion of the film 2 that faces the bubbles 4 is a semiconductor wafer. Remove from 1 (Adhesive 3).

  Subsequently, as shown in FIG. 3B, the film 2 is returned and attached to the semiconductor wafer 1 while being bent using the film moving arm 14. At this time, as shown by an arrow in FIG. 3B, a downflow is applied between the adhesive 3 and the film 2, thereby preventing re-mixing of bubbles into the adhesive 3.

  Thereafter, although not shown, the adhesive 3 is cured by irradiating the adhesive 3 with ultraviolet rays. Then, a plating process, a back grinding process, and the like are performed on the semiconductor wafer 1.

  As described above, according to the bubble removal method of the present embodiment, since the above-described bubble moving step and defoaming step are performed after the film 2 is attached to the one surface 1a of the semiconductor wafer 1, the film 2 is attached. The bubbles 4 in the adhesive 3 generated when applying can be surely removed.

  Moreover, according to the bubble removal method of this embodiment, it is a grade which peels off the film 2 in a bubble moving process, or gives vibration and heat to the adhesive agent 3, and is a grade which peels off the film 2 in a defoaming process. Therefore, the stress that stretches the warped semiconductor wafer flatly can be suppressed as much as possible, and the bubbles 4 in the adhesive 3 can be removed without destroying the semiconductor wafer 1.

  In addition, it is conceivable that after the film 2 is pasted on the one surface 1a of the semiconductor wafer 1, simply leaving the film 2 to allow the bubbles to rise, but according to the present embodiment, the energy is artificially applied to the adhesive 3. Is added to promote the rising of the bubbles, so that the productivity can be improved as compared with the case where the bubbles are left alone.

  In the present embodiment, in the bubble moving step, the adhesive 3 is expanded and contracted, the adhesive 3 is vibrated, and the adhesive 3 is heated. Even if not implemented, at least one of these three may be implemented.

  By the way, in the case of expanding / contracting the adhesive 3 in the bubble moving process and in the defoaming process, the film 2 is peeled off from the adhesive 3 so that the adhesive 3 is dried and mixed with dust, and the adhesive strength of the adhesive 3 is reduced. However, if at least two of applying vibration to the adhesive 3 and applying heat to the adhesive 3 are carried out in the bubble moving process, drying of the adhesive and dust contamination can be minimized. It is done.

(Second Embodiment)
In the present embodiment, the specific content of the defoaming step is changed with respect to the first embodiment. Hereinafter, changes to the first embodiment will be mainly described.

  In FIG. 4, the schematic block diagram of the defoaming apparatus 10 in this embodiment is shown. The defoaming device 10 of this embodiment is obtained by adding a suction nozzle 20 and a vacuum pump 21 to the defoaming device 10 of FIG. 1 described in the first embodiment.

  The suction nozzle 20 pierces one end side of the film 2 to form an opening, sucks bubbles in the adhesive from the one end side while being pierced into the opening, and a vacuum is applied to the other end of the suction nozzle 20. A pump 21 is connected. Thus, in the present embodiment, the suction nozzle 20 corresponds to a mechanism for forming the opening 2a in the film 2, and the mechanism has a function of sucking bubbles from the opening 2a. The suction nozzle 20 is movable, and the controller 19 controls the movement of the suction nozzle 20 and the operation / stop of the vacuum pump.

  Next, the bubble removal method of this embodiment will be described.

  In the present embodiment, at least one or more of the three operations of expanding / contracting the adhesive 3 described in the first embodiment, applying vibration to the adhesive 3, and applying heat to the adhesive 3 in the bubble moving step. And the following defoaming step is performed. The schematic diagram of the defoaming process in this embodiment is shown to Fig.5 (a), (b).

  In the present embodiment, as shown in FIG. 5A, the control unit 19 can suck the bubbles 4 through the suction nozzle 20 based on the number and position information of the bubbles 4 acquired by the camera 17 and the image processing unit 18. Move to position. Then, after the opening 2a is formed in the film 2 by piercing the suction nozzle 20 into the film 2, the vacuum pump 21 is operated, and the bubbles 4 are removed by sucking the bubbles 4 from one end side of the suction nozzle 20. To do.

  In this case, as shown in FIG. 5B, as a result, the opening 2a of the film 2 is closed by the adhesive 3 itself.

  In the present embodiment, the bubble 4 is sucked after the opening 2a is formed. However, if the opening 2a is formed, the bubble 4 can be removed by contacting the air with the atmosphere. Alternatively, the opening 2a may be simply formed. In this case, it is preferable to press the periphery of the opening 2a from the outside.

  However, if the bubbles 4 are sucked as in this embodiment, the time required for the defoaming step can be shortened, and the productivity can be improved.

  Further, in the present embodiment, in the defoaming step, since the opening 2a is only partially formed with respect to the film 2, as compared with the case where the film 2 is peeled off from the adhesive 3 as in the first embodiment, Drying of the adhesive 3 and mixing of dust in the defoaming step can be reduced.

(Third embodiment)
The present embodiment is obtained by further adding a plurality of bubbles to the bubble removing method of the second embodiment. Hereinafter, changes to the second embodiment will be described.

  The defoaming apparatus 10 used in the present embodiment is the same as the defoaming apparatus 10 in FIG. 4 described in the second embodiment, except that the stage 11 is changed to a rotary stage. Same as device 10. The rotary stage 11 is a mechanism that applies a centrifugal force to the adhesive 3 by rotating the semiconductor wafer 1 around the center of the one surface 1 a of the semiconductor wafer 1.

  6A and 6B are top views of the semiconductor wafer 1 in the bubble moving process of the present embodiment. In the present embodiment, in the bubble moving step, as shown in FIG. 6A, while the rotary stage 11 is rotated, the vibration generator 12 vibrates the adhesive 3 and the heater 13 applies the adhesive 3. Give heat to.

  At this time, by rotating the rotary stage 11, the semiconductor wafer 1 is rotated about the central portion of the one surface 1 a of the semiconductor wafer 1. Thereby, as shown in FIG.6 (b), the centrifugal force can be given to the adhesive agent 3 and the bubble 4 lighter than the adhesive agent 3 can be collected in the center part.

  Thereafter, as in the second embodiment, a defoaming step using the suction nozzle 20 is performed. In FIG. 7, sectional drawing of the semiconductor wafer 1 in the defoaming process of this embodiment is shown. In the defoaming step of the present embodiment, since the bubbles 4 are gathered at the center of the semiconductor wafer 1, the suction nozzle 20 may be stabbed into a portion of the film 2 that faces the center of the semiconductor wafer 1.

  Thus, according to the present embodiment, the bubbles 4 are collected at the center of the semiconductor wafer 1, so that the removal position of the bubbles 4 can always be fixed to the center of the semiconductor wafer 1. For this reason, since it is not necessary to detect the position of the bubbles for performing the defoaming step and to change the bubble removal position based on the detection result, it is easy to automate the defoaming step.

  In this embodiment, the semiconductor wafer 1 is rotated and the bubbles 4 are collected in the center portion at the time of the bubble moving step. However, the bubble moving step may be performed at any time before the defoaming step. You may carry out before and after. For example, as in the first embodiment, the semiconductor wafer 1 is rotated after all three of expanding / contracting the adhesive 3, applying vibration to the adhesive 3, and applying heat to the adhesive 3 are simultaneously performed. The bubbles 4 may be collected at the center.

(Fourth embodiment)
In the present embodiment, the specific contents of the bubble moving step are changed with respect to the first embodiment. Hereinafter, changes to the first embodiment will be mainly described.

  FIG. 8 shows a schematic configuration diagram of the defoaming apparatus 10 in the present embodiment. The defoaming apparatus 10 used in the present embodiment includes a stage 11, a vibration generator 12, and a heater 13, similarly to the defoaming apparatus 10 of FIG. 1, and the stage 11 is at a position away from the stage 11. The stage 11 is connected to the rotary shaft 30 and includes a mechanism for rotating (revolving) the stage 11 around the rotary shaft 30. When the stage 11 revolves, the semiconductor wafer 1 revolves with the film 2 side of the semiconductor wafer 1 directed toward the center, and a centrifugal force can be applied to the adhesive 3.

  In the defoaming device 10 of this embodiment, the mechanism in which the stage 11 rotates (revolves) around the rotation shaft 30 moves the bubbles 4 in the adhesive 3 to the covering material 2 side, so that the adhesive 3 This corresponds to an energy addition mechanism for adding energy to the.

  In addition, the defoaming device 10 used in the present embodiment is provided with a film moving arm 14 or a suction nozzle 20 similarly to the defoaming device 10 of FIG.

  In the present embodiment, in the bubble moving process, as shown in FIG. 8, while revolving the stage 11, vibration is applied from the vibration generator 12 to the adhesive 3 and heat is applied from the heater 13 to the adhesive 3. give.

  Here, FIG. 9 shows a cross-sectional view of the semiconductor wafer 1 when the stage 11 is revolving. As shown in FIG. 9, the air bubbles 4 that are lighter than the adhesive 3 can be moved to the film 2 side by revolving the stage 11 and applying a centrifugal force to the adhesive 3.

  In this way, the semiconductor wafer 1 is revolved around the film 2 side of the semiconductor wafer 1 to give a centrifugal force to the adhesive 3, to give vibration to the adhesive 3, and to give heat to the adhesive 3. The bubble 4 is moved to the film 2 side by these three.

  At this time, as in the third embodiment, the semiconductor wafer 1 may be rotated by the rotary stage 11 to collect the bubbles 4 at the center.

  Then, a defoaming process is implemented similarly to 1st Embodiment or 2nd Embodiment. For example, after the bubble moving step, the stage 11 on which the semiconductor wafer 1 is mounted is moved, and the bubbles 4 are removed using the film moving arm 14 or the suction nozzle 20.

  In the present embodiment, in the bubble moving step, the centrifugal force is applied to the adhesive 3, the vibration is applied to the adhesive 3, and the heat is applied to the adhesive 3. One or both of applying vibration to the adhesive and applying heat to the adhesive 3 may be omitted.

(Other embodiments)
(1) In each of the above-described embodiments, as an example of the bubble moving step, the adhesive 3 is expanded and contracted, the adhesive 3 is vibrated, the adhesive 3 is heated, and the adhesive 3 is subjected to centrifugal force. However, it is also possible to implement these four items one by one or a plurality of items in order. In short, in the bubble moving step, these four can be performed, and at least one selected from these four may be performed.

  (2) In each of the embodiments described above, the defoaming step is performed after applying vibration and heat to the adhesive 3 in the bubble moving step. However, in the defoaming step, the vibration and heat are continuously applied to the adhesive 3. May be.

  (3) In each above-mentioned embodiment, although the film 2 made from organic resin was used as a coating | covering material, a glass plate etc. may be used. Even when a plate-like coating material that does not bend like a glass plate is used, it is possible to peel the coating material or to form an opening in the coating material.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1a One side of semiconductor wafer 2 Film (coating material)
3 Adhesive 10 Defoaming equipment (Semiconductor equipment manufacturing equipment)
11 stages, rotary stage 12 vibration generator (energy addition mechanism)
13 Heater (energy addition mechanism)
14 Film transfer arm (energy addition mechanism)
20 Suction nozzle

Claims (10)

After applying the adhesive (3) to one surface (1a) of the semiconductor wafer (1), the covering material (2) is pasted to the one surface (1a) of the semiconductor wafer (1) via the adhesive (3). In a method for manufacturing a semiconductor device having a process,
A case where air bubbles (4) are mixed in the adhesive (3) after the covering material (2) is pasted on the one surface (1a) of the semiconductor wafer (1) via the adhesive (3). And a bubble moving step of applying energy to the adhesive (3) to move the bubbles (4) to the covering material (2) side,
After the bubble moving step, the bubbles (4) in the adhesive (3) are removed by peeling off the covering material (2) or by forming an opening (2a) in the covering material (2). And a defoaming step for removing the substrate by exposure to the atmosphere.   The said defoaming process WHEREIN: After forming the said opening part (2a) in the said coating | covering material (2), the said bubble (4) is attracted | sucked from the said opening part (2a). A method for manufacturing a semiconductor device.   Applying energy to the adhesive (3) in the bubble moving step is to extend or contract the adhesive (3) by peeling the covering material (2) or returning it to the original position. 3) giving vibration to the adhesive (3), revolving the semiconductor wafer (1) around the covering material (2) side of the semiconductor wafer (1), and 3. The method of manufacturing a semiconductor device according to claim 1, wherein the method is at least one selected from applying a centrifugal force to the adhesive (3).   Before the defoaming step, by rotating the semiconductor wafer (1) around the central portion of the one surface (1a) of the semiconductor wafer (1) and applying a centrifugal force to the adhesive (3) 4. The method of manufacturing a semiconductor device according to claim 1, wherein a plurality of the bubbles (4) in the adhesive (3) are collected in the central portion. 5.   The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor wafer is made of SiC. A semiconductor device for removing bubbles (4) in an adhesive (3) after a covering material (2) is attached to one surface (1a) of a semiconductor wafer (1) via an adhesive (3) Manufacturing equipment,
An energy application mechanism (12, 13, 14) for applying energy to the adhesive (3) in order to move the bubbles (4) in the adhesive (3) toward the covering material (2);
A mechanism (14) for peeling off the covering material (2) in order to remove the bubbles (4) moved to the covering material (2) side by contacting with the atmosphere. manufacturing device. A semiconductor device for removing bubbles (4) in an adhesive (3) after a covering material (2) is attached to one surface (1a) of a semiconductor wafer (1) via an adhesive (3) Manufacturing equipment,
An energy application mechanism (12, 13, 14) for applying energy to the adhesive (3) in order to move the bubbles (4) in the adhesive (3) toward the covering material (2);
An opening (2a) is formed in the covering material (2) in order to remove the bubbles (4) in the adhesive (3) moved to the covering material (2) side by exposure to the atmosphere. A semiconductor device manufacturing apparatus comprising: a mechanism (20).   The mechanism (20) for forming the opening (2a) in the covering material (2) further has a function of sucking the bubbles (4) from the opening (2a). The manufacturing apparatus of the semiconductor device of description.   The energy application mechanism includes a mechanism (14) for extending or contracting the adhesive (3) by peeling the covering material (2) or returning it to the original position, and a mechanism (12) for applying vibration to the adhesive (3). ), A mechanism (13) for applying heat to the adhesive (3), the semiconductor wafer (1) is revolved around the coating material (2) side of the semiconductor wafer (1), and the adhesive ( 9. The apparatus for manufacturing a semiconductor device according to claim 6, wherein the apparatus is at least one selected from a mechanism that applies centrifugal force to 3). In order to collect the plurality of bubbles (4) in the adhesive (3) at the center of the one surface (1a) of the semiconductor wafer (1), the semiconductor wafer (1) is rotated around the center. The apparatus for manufacturing a semiconductor device according to claim 6, further comprising a mechanism for applying a centrifugal force to the adhesive (3).

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