JP2013077855A - Adhesive used for manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an adhesive capable of easily manufacturing a void-less semiconductor device, which does not rely on substrate design.SOLUTION: In the ase of manufacturing a semiconductor device which is manufactured by die-bonding a chip and a wiring substrate through an unsolidified adhesive, heating the wiring substrate to which the chip is die-bonded, and settling the unsolidified adhesive, an adhesive is used for the manufacturing method of the semiconductor device including a static pressurizing process in which, before the settling is completed, the wiring substrate to which the chip is die-bonded is static-pressurized and heated under such condition as an embedding index α of 75 Kor less as represented by a formula (1): α=[G/(P×T)]×10. (In the formula (1), P is pressure (Pa) wit respect to a normal pressure, and T is heating temperature (K).) The adhesive is characterized by having an elastic modulus G at 120°C of 30000 Pa or less.

Description

  The present invention relates to an adhesive used in a method for manufacturing a semiconductor device. More specifically, the present invention relates to a semiconductor device in which a chip and a wiring substrate are die-bonded via an uncured adhesive, the wiring substrate on which the chip is die-bonded is heated, and the uncured adhesive is cured. The present invention relates to the adhesive used in production.

  Conventionally, a semiconductor device is manufactured through a die bonding process in which a chip and a wiring board are die-bonded with a liquid or film-like thermosetting adhesive, followed by a heating process for curing the adhesive, a wire bonding process, and a molding process. (FIG. 5, V-VII). Here, when die-bonding the chip 2 and the wiring board 4 through the uncured adhesive 3, the void 5 is present in the adhesive, or the void is present at the interface of the adhesive on the chip side or the wiring board side. 6 may exist (FIG. 5). In particular, when a liquid adhesive is used, voids are often found in the adhesive, and when a film-like adhesive is used, the adhesive force is insufficient and the adherence to the unevenness of the adherend surface is insufficient. Therefore, voids often exist at the interface. These voids exist without disappearing even after the heating process in which the uncured adhesive 3 is cured adhesive 42, the wire bonding process for connecting the wires 43, and the molding process with the sealing resin 45 (FIG. 5). ).

Such voids have to be eliminated because they become the starting point of package cracks in the manufactured semiconductor device 44.
On the other hand, by reducing the viscosity at the time of application if it is a liquid adhesive, and by reducing the elastic modulus at the time of die bonding if it is a film adhesive, by optimizing the die bonding conditions, Attempts have been made to reduce voids by following the unevenness of the wiring board (Patent Document 1).

International Publication No. 2005/004216 Pamphlet

  However, when a liquid or film-like adhesive is used, voids can be reduced by the above-described method. However, when the viscosity is lowered or the elastic modulus is lowered, the adhesive sometimes protrudes from the chip end surface during die bonding. In particular, in a thin chip in recent years, there is a problem that the protruding adhesive rolls up on the chip circuit surface, contaminates the wire pad, and lowers the wire bonding strength.

  In addition, when a film adhesive is used, the generation of voids existing at the interface also depends on the substrate design. For this reason, it is necessary to change the composition and lower the elastic modulus every time the substrate design is changed. Furthermore, it is complicated because the die bonding conditions must be reviewed and optimized. In recent high-density wiring boards, the uneven step is large, and it is quite difficult to perform die bonding to fill the step.

Therefore, an object of the present invention is to provide an adhesive that can easily manufacture a semiconductor device having no voids without depending on the substrate design.
When manufacturing a multi-stack type semiconductor device in the present invention, it is possible to regard an upper chip as a chip and a lower chip as a wiring board among relatively positioned chips.

As a result of intensive studies, the present inventors have found that the above problems can be solved by a specific adhesive, and have completed the present invention.
That is, first, the adhesive according to the present invention is
When die-bonding the chip and the wiring substrate through an uncured adhesive, heating the wiring substrate on which the chip is die-bonded, and curing the uncured adhesive to manufacture a semiconductor device,
Before the curing is completed, a static pressure is applied to the wiring board on which the chip is die-bonded by applying a static pressure and heating under a condition that an embedding index α represented by the following formula (1) is 75 K ⁻¹ or less. The adhesive used in the method for manufacturing a semiconductor device including a pressing step,
The elastic modulus G at 120 ° C. is 30000 Pa or less.

α = [G / (P × T)] × 10 ⁶ (1)
(In the formula, P represents a pressure difference (Pa) from normal pressure, and T represents a heating temperature (K).)
In addition, the adhesive includes an acrylic copolymer and a thermosetting resin.

2ndly, the die-bonding sheet | seat which concerns on this invention has a base material and the adhesive agent of Claim 1 on this base material, It is characterized by the above-mentioned.
Third, a method for manufacturing a semiconductor device according to the present invention includes:
A method of manufacturing a semiconductor device by die bonding a chip and a wiring substrate through an uncured adhesive, heating the wiring substrate on which the chip is die-bonded, and curing the uncured adhesive,
As the uncured adhesive, a die bonding step of die-bonding through an uncured adhesive having an elastic modulus G at 120 ° C. of 30000 Pa or less,
Before the curing is completed, a static pressure is applied to the wiring board on which the chip is die-bonded by applying a static pressure and heating under a condition that an embedding index α represented by the following formula (1) is 75 K ⁻¹ or less. And a pressurizing step.

α = [G / (P × T)] × 10 ⁶ (1)
(In the formula, P represents a pressure difference (Pa) from normal pressure, and T represents a heating temperature (K).)
In addition, the method for manufacturing a semiconductor device according to the present invention includes a heating method in which the wiring board that is pressed and heated in the static pressure pressing step is heated without pressing until the curing is completed. It is preferable to further include a step.

  According to the adhesive according to the present invention, the void can be easily eliminated without depending on the substrate design, by the hydrostatic pressing process after die-bonding the chip and the wiring board with the uncured adhesive.

FIG. 1-1 is a view for explaining the method for manufacturing a semiconductor device of the present invention. FIG. 1-2 is a view for explaining the method for manufacturing a semiconductor device of the present invention, and is a view of the wiring substrate 4 of FIG. 1-1 viewed from the chip 2 side. FIG. 2 shows an example of a wiring board in which a chip used in the present invention and an uncured adhesive are laminated. FIG. 3 shows an example of a wiring board in which a chip used in the present invention and an uncured adhesive are laminated. FIG. 4 is a view for explaining an index β representing the adhesion of the outer periphery of the chip, and is a view of the chip as viewed from above. FIG. 5 is a diagram for explaining a conventional method of manufacturing a semiconductor device.

Hereinafter, the present invention will be specifically described.
<Adhesive>
The adhesive according to the present invention is a method in which a chip and a wiring substrate are laminated via an uncured adhesive and die bonded, and the wiring substrate on which the chip is die bonded is heated to cure the uncured adhesive. When manufacturing semiconductor devices,
Before the curing is completed, a static pressure is applied to the wiring board on which the chip is die-bonded by applying a static pressure and heating under a condition that an embedding index α represented by the following formula (1) is 75 K ⁻¹ or less. The adhesive used in the method for manufacturing a semiconductor device including a pressing step,
The elastic modulus G at 120 ° C. is 30000 Pa or less.

α = [G / (P × T)] × 10 ⁶ (1)
(In the formula, P represents a pressure difference (Pa) from normal pressure, and T represents a heating temperature (K).)
The shape of the adhesive may be liquid, paste, or film. In the case of a film-like adhesive, it is usually laminated on a substrate until it is used in a method for manufacturing a semiconductor device. Moreover, you may laminate | stack a peeling film on a film-form adhesive until it uses for the manufacturing method of a semiconductor device.

  As the uncured adhesive, an adhesive having an elastic modulus G at 120 ° C. of 30000 Pa or less, preferably 50 to 28000, more preferably 100 to 25000 is used. When the elastic modulus G is in the above range, the outer periphery of the chip can be in close contact with the substrate during die bonding. When the outer peripheral portion is in close contact, voids existing between the uncured adhesive and the wiring board or between the uncured adhesive and the chip are eliminated by a static pressure heating process [2] described later. it can. In particular, even when a wiring board with large irregularities is used, high adhesion between the chip outer peripheral portion and the board can be obtained at the time of die bonding, so that the uncured adhesive and the wiring board can be separated by the subsequent hydrostatic heating step [2]. You can eliminate voids that exist between them.

In this specification, the elastic modulus G is measured as follows when the adhesive contains an energy ray polymerizable compound (F) described later. First, an adhesive is formed to a thickness of about 200 μm. For example, in the case of a film adhesive having a thickness of 30 μm, it is laminated so as to be six sheets, that is, 180 μm. At this time, the base material is laminated on both outer sides of the laminated adhesive. Then, (manufactured by Lintec (Inc.), Adwill RAD2000 m / 8) UV irradiation apparatus from both of the substrate surface by UV (illuminance: 120 mW / cm ² or more, for example 320 mW / cm ^2, light quantity: 70~200mJ / cm ² , For example, 180 mJ / cm ² ). After the ultraviolet irradiation, both base materials are peeled off, the adhesive is further laminated so as to have a thickness of about 1.0 mm, and the obtained laminate is cut into a circle of 8 mmφ. Three of the 8 mmφ circles are stacked to obtain a sample for measuring the elastic modulus G. Using this sample, the elastic modulus G at 120 ° C. is measured at a frequency of 1 Hz by a dynamic viscoelasticity measuring device (RDA-II, manufactured by Rheometrics). In addition, when an adhesive agent does not contain the energy-beam polymeric compound (F) mentioned later, it measures similarly to the above except not irradiating an ultraviolet-ray.

  The adhesive having an elastic modulus G at 120 ° C. of 30000 Pa or less is specifically formed from an adhesive containing a thermosetting resin (A). Examples of the thermosetting resin (A) include epoxy, phenoxy, phenol, resorcinol, urea, melamine, furan, unsaturated polyester, silicone, and the like. From the viewpoint of reliability, versatility, and economy, epoxy resin is used. preferable.

More specifically, examples of the epoxy resin include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; glycidyl ethers of alcohols such as butanediol, polyethylene glycol, and polypropylene glycol; phthalic acid Glycidyl ether of carboxylic acids such as isophthalic acid and tetrahydrophthalic acid; dicyclopentadiene type epoxy resin;
Glycidyl type or alkyl glycidyl type epoxy resins in which active hydrogen bonded to a nitrogen atom such as aniline isocyanurate is substituted with a glycidyl group; vinylcyclohexane diepoxide, 3,4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, Epoxy is introduced by, for example, oxidizing a carbon-carbon double bond in the molecule, such as 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3,4-epoxy) cyclohexane-m-dioxane. So-called alicyclic epoxides.

  Among these, bisphenol A type, o-cresol novolak type, phenol novolak type, and dicyclopentadiene type epoxy resins are preferable from the viewpoints of reliability and versatility.

A thermosetting resin (A) is used individually or in combination of 2 or more types.
Moreover, you may use a thermosetting resin (A) in combination with a suitable heat activation type | mold latent hardener (B). That is, the adhesive may further contain a heat activated latent curing agent (B). The thermoactive latent curing agent (B) is a curing agent that does not react with the thermosetting resin (A) at room temperature but is activated when heated to a certain temperature or more and reacts with the thermosetting resin (A). .

Specific examples of the thermally activated latent curing agent (B) include Adeka Opton (registered trademark) CP-66 (manufactured by ADEKA Corporation), Sun-Aid (registered trademark) SI-60, 80 and 100 (Sanshin Chemical Industry ( Various onium salts such as manufactured by
As dibasic acid dihydrazide compounds, ADH (manufactured by Nippon Hydrazine Industry Co., Ltd.), SDH (manufactured by Nippon Hydrazine Industry Co., Ltd.), IDH (manufactured by Nippon Hydrazine Industry Co., Ltd.), N-12 (Nihon Hydrazine Industry Co., Ltd.) ), LDH (manufactured by Ajinomoto Co., Inc.), UDH (manufactured by Ajinomoto Co., Inc.), dicyandiamide, AH-150 (manufactured by Ajinomoto Co., Inc.), Adeka Hardener (registered trademark) 3636AS (manufactured by ADEKA Corporation), As an amine adduct type curing agent, Amicure (registered trademark) PN-23, MY-23, PN-H, MY-H (manufactured by Ajinomoto Co., Inc.), and as an imidazole compound, Curazole (registered trademark) 2PHZ, 2EZ-CY, High melting point active hydrogen compounds such as 2MZ-AZINE, 2MZ-A, 2MZ-OK, 2P4MHZ (manufactured by Shikoku Chemicals Co., Ltd.) That.

Among these, dicyandiamide, an imidazole compound, or a mixture thereof is preferable for use in combination with an epoxy resin.
A heat activation type latent hardening agent (B) is used individually or in combination of 2 or more types.

  The thermoactive latent curing agent (B) is usually 0.1 to 20 parts by weight, preferably 0.5 to 15 parts by weight, more preferably 1 to 10 parts per 100 parts by weight of the thermosetting resin (A). Used in parts by weight.

  Moreover, it is preferable that the said adhesive agent contains the acrylic copolymer (C) which has pressure-sensitive adhesiveness at normal temperature. In this case, the adhesive becomes an adhesive having tackiness at room temperature. An adhesive agent refers to an adhesive that exhibits tackiness at normal temperature in the initial state and is cured by a trigger such as heating to exhibit strong adhesiveness.

Examples of the acrylic copolymer (C) include a polymer obtained by polymerizing an alkyl ester of (meth) acrylic acid as a main component and a polar monomer copolymerizable therewith.
As the alkyl ester of (meth) acrylic acid, an alkyl ester of (meth) acrylic acid having an alkyl group having 1 to 20 carbon atoms is preferably used. Specifically, methyl acrylate, methyl methacrylate, Ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, n-butyl acrylate, n-butyl methacrylate, isobutyl acrylate, isobutyl methacrylate, pentyl acrylate, pentyl methacrylate, hexyl acrylate, methacrylic acid Examples include hexyl, octyl acrylate, octyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, lauryl acrylate, and lauryl methacrylate. Examples of the polar monomer include acrylic acid, methacrylic acid, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, and the like.

  The weight average molecular weight of the acrylic copolymer (C) is preferably 100,000 or more, particularly preferably 150,000 to 1,000,000. Moreover, the glass transition temperature of an acrylic copolymer (C) is 20 degrees C or less normally, Preferably it is about -70 to 0 degreeC, and has adhesiveness in normal temperature (23 degreeC).

An acrylic copolymer (C) is used individually or in combination of 2 or more types.
The acrylic copolymer (C) is usually 0.5 to 50 parts by weight, preferably 1 to 40 parts by weight, more preferably 5 to 30 parts by weight, based on 100 parts by weight of the thermosetting resin (A). Used.

  Moreover, a coupling agent (D) is added to an adhesive agent as needed in order to improve the adhesiveness and adhesiveness with respect to the adherend of an adhesive agent. As the coupling agent (D), a compound having a group that reacts with a functional group of the thermosetting resin (A), the acrylic copolymer (C) or the like is preferable, and a silane coupling agent is suitably used.

  Examples of the silane coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and γ- (methacrylopropyl). ) Trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-6- (aminoethyl) -γ-aminopropylmethyldiethoxysilane, N- Phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfane, methyltrimethoxy Silane, methyl Examples include triethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazolesilane.

A coupling agent (D) is used individually or in combination of 2 or more types.
The coupling agent (D) is usually 0.1 to 20 parts by weight, preferably 0.3 to 15 parts by weight, more preferably 0.5 to 10 parts by weight with respect to 100 parts by weight of the thermosetting resin (A). Used in the amount of.

  When the acrylic copolymer (C) is used, the crosslinking agent (E) may be added to the adhesive as necessary in order to adjust the initial adhesive force and cohesive force of the adhesive. Examples of the crosslinking agent (E) include organic polyvalent isocyanate compounds and organic polyvalent imine compounds.

  Specific examples of the organic polyvalent isocyanate compound include aromatic polyvalent isocyanate compounds and aliphatic polyvalent isocyanate compounds. More specific examples of the organic polyvalent isocyanate compound include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, and 1,4-xylene diisocyanate. Narate, diphenylmethane-4,4′-diisocyanate, diphenylmethane-2,4′-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4 ′ -Diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, lysine isocyanate and the like are preferably used. Also included are trimers of these polyvalent isocyanate compounds, and terminal isocyanate urethane prepolymers obtained by reacting these polyvalent isocyanate compounds with polyol compounds.

  Specific examples of the organic polyvalent imine compound include N, N′-diphenylmethane-4,4′-bis (1-aziridinecarboxamide), trimethylolpropane-tri-β-aziridinylpropionate, tetramethylol. And methane-tri-β-aziridinylpropionate, N, N′-toluene-2,4-bis (1-aziridinecarboxamide) triethylenemelamine, and the like.

A crosslinking agent (E) is used individually or in combination of 2 or more types.
A crosslinking agent (E) is 0.1-20 weight part normally with respect to 100 weight part of thermosetting resins (A), Preferably it is used in 0.2-10 weight part.

  Furthermore, an energy ray polymerizable compound (F) having at least one polymerizable double bond in the molecule may be added to the adhesive as necessary. When laminating the chip 2 and the wiring board 4 using the adhesive of the dicing die bonding sheet as the uncured adhesive 3, energy ray polymerization is performed on the adhesive forming the adhesive as described later. It is preferable to add a functional compound (F).

  Examples of the energy ray polymerizable compound (F) include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate. Polyfunctional monomers such as 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, and acrylate having a dicyclopentadiene skeleton (for example, R684 manufactured by Nippon Kayaku Co., Ltd.) are used.

  Besides these, energy ray-polymerizable oligomers such as urethane acrylate, epoxy-modified acrylate, polyester acrylate, polyether acrylate and itaconic acid oligomer may be used.

The weight average molecular weight of the energy beam polymerizable compound (F) is usually 100 to 30000, preferably 300 to 10000.
An energy beam polymeric compound (F) is used individually or in combination of 2 or more types.

  The energy ray polymerizable compound (F) is usually 0 to 50 parts by weight, preferably 1 to 30 parts by weight, more preferably 100 parts by weight in total of the acrylic copolymer (C) and the thermosetting resin (A). Is used in an amount of 2 to 20 parts by weight.

  In addition, when ultraviolet rays are used as an energy ray for polymerizing the energy ray polymerizable compound (F), the addition of the photopolymerization initiator (G) to the adhesive can reduce the polymerization curing time and the energy ray irradiation amount. .

  As photopolymerization initiator (G), benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2,4-diethyl Thioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, 2-chloranthraquinone, 2,4,6-trimethylbenzoyldiphenylphos Examples include fin oxide.

A photoinitiator (G) is used individually or in combination of 2 or more types.
The photopolymerization initiator (G) is usually used in an amount of 0.0.01 to 20 parts by weight, preferably 0.1 to 15 parts by weight, based on 100 parts by weight of the energy beam polymerizable compound (F).

  In addition, the adhesive may further contain a thermoplastic resin (H) in order to improve adhesiveness and embedding at the time of die bonding. Examples of the thermoplastic resin (H) include polyester resin, polyvinyl ether, urethane resin, and polyamide.

A thermoplastic resin (H) is used individually or in combination of 2 or more types.
The thermoplastic resin (H) is usually used in an amount of 0 to 80 parts by weight, preferably 3 to 70 parts by weight, more preferably 5 to 60 parts by weight with respect to 100 parts by weight of the thermosetting resin (A).

The adhesive may further include an inorganic filler (I) in order to improve the reliability of the finally manufactured semiconductor device.
Examples of the inorganic filler (I) include powders of silica, alumina, talc, calcium carbonate, titanium white, bengara, silicon carbide, boron nitride, and the like, beads formed by spheroidizing these, single crystal fibers, and glass fibers.

Inorganic filler (I) is used individually or in combination of 2 or more types.
The inorganic filler (I) is usually used in an amount of 0 to 400 parts by weight, preferably 5 to 200 parts by weight, and more preferably 10 to 100 parts by weight with respect to 100 parts by weight of the adhesive component excluding the inorganic filler.

  Examples of the method for preparing the adhesive include a method in which the above-described components are appropriately mixed. Under the present circumstances, when a solvent is contained in the obtained adhesive agent, each component diluted with the solvent previously may be mixed, and a solvent may be added when mixing each component.

  The elastic modulus G of the adhesive formed from the adhesive containing the components as described above can be adjusted as follows. For example, when the acrylic copolymer (C) is used, the elastic modulus G increases as the glass transition temperature of the acrylic copolymer (C) is increased or the molecular weight is increased. Further, the elastic modulus G increases as the amount of the acrylic copolymer (C) added increases. Furthermore, the elastic modulus G can be increased by using the energy beam polymerizable compound (F).

  Moreover, when using a thermoplastic resin (H), the elasticity modulus G at the time of a heating can be made small if the addition amount is increased. The thermosetting resin (A) has a low molecular weight and does not change depending on the energy ray polymerizable compound (F).

  In addition, by using the above-mentioned adhesive in the present invention, the index β representing the adhesion of the outer periphery of the chip obtained by the method described later in Examples can be usually 80 to 100%, preferably 95 to 100. .

  Examples of the method of die-bonding the chip and the wiring substrate through an uncured adhesive include a method using a liquid, paste, or film adhesive as the uncured adhesive. Examples of the film-like adhesive include the following method using an adhesive formed on a dicing die bonding sheet as an uncured adhesive.

  First, a dicing die bonding sheet provided with an adhesive is prepared. The dicing die bonding sheet has a configuration in which a layer formed from the above-described adhesive is laminated on a base material in a peelable manner.

  The substrate is not particularly limited, but polyethylene, polypropylene, polyvinyl chloride, ethylene vinyl acetate copolymer, ethylene (meth) acrylic acid copolymer, ethylene (meth) acrylic acid ester copolymer, polyethylene terephthalate, A resin film such as polyurethane can be used.

  The manufacturing method of a dicing die-bonding sheet is not specifically limited, For example, after apply | coating an adhesive agent on a base material, you may manufacture this by drying. As a method for applying the adhesive, a method using a known coating apparatus such as a roll coater, a knife coater, a roll knife coater, a die coater, or a curtain coater is used. Alternatively, an adhesive may be provided on the release film and transferred to the substrate to produce the adhesive. In addition, in order to protect an adhesive agent before using a dicing die-bonding sheet, you may laminate | stack a peeling film on the upper surface of an adhesive agent.

  A ring frame fixing pressure-sensitive adhesive sheet may be separately provided on the outer peripheral portion of the surface of the adhesive so that no adhesive remains on a jig such as a ring frame for fixing the wafer from the dicing process to the die bonding process.

Although the thickness of the adhesive of a dicing die-bonding sheet changes with the uneven | corrugated height shape etc. of the wiring board to adhere | attach, it is 3-150 micrometers normally, Preferably it is 5-100 micrometers.
Next, a dicing die bonding sheet is attached to a wafer made of silicon or the like, and the wafer and the adhesive are diced together (dicing step). By this step, a chip having an uncured adhesive on one side is obtained.

  In addition, when the energy beam polymerizable compound (F) is blended in the adhesive of the dicing die bonding sheet, if the energy beam is irradiated before the dicing process or after the dicing process, the adhesion with the substrate can be lowered. . That is, the adhesive is easily peeled off from the base material after energy beam irradiation, and pickup described later is facilitated. Therefore, it is preferable to blend the energy beam polymerizable compound (F) into the adhesive forming the adhesive. .

<Method for Manufacturing Semiconductor Device>
[Embodiment 1]
In the method for manufacturing a semiconductor device according to the present invention (Embodiment 1), the chip 2 and the wiring board 4 are die-bonded through an uncured adhesive 3, and the wiring board 4 to which the chip 2 is die-bonded is heated. A method of manufacturing the semiconductor device 10 by curing the uncured adhesive 3, which includes a die bonding step [1] and a static pressure heating step [2] described below, and if necessary, further A heating process [3] and an assembly process [4] are included (FIGS. 1-1 and 1-2).

[1] Die Bonding Process In the die bonding process, the uncured adhesive as described above is used as the uncured adhesive 3.

  Prior to the die bonding step, as described above, a wafer is attached to the dicing die bonding sheet, and the wafer and the adhesive are diced to form chips (dicing step). Here, depending on the conditions for attaching the dicing die bonding sheet, a void (not shown) may be generated at the interface between the chip 2 and the uncured adhesive 3.

  Subsequently, peeling (pickup) is performed at the interface between the base material and the adhesive of the dicing die bonding sheet, and the separated chip 2 having the uncured adhesive 3 is placed on the chip mounting portion of the wiring board 4. Die bond (die bonding process).

  As the wiring substrate 4, for example, a lead frame made of metal, a substrate made of an organic material or an inorganic material, a laminated substrate made of metal and an organic material or an inorganic material, or the like is used.

As conditions for die bonding, a pressure of 0.01 to 10 MPa, a temperature of 100 to 150 ° C., and a time of 0.1 to 3 seconds are usually used.
As described above, the wiring substrate 4 on which the chip 2 is die-bonded is obtained.

  Here, depending on the conditions of stacking and die bonding (pressure, temperature, time, etc.), it is an interface between the uncured adhesive 3 and the wiring board 4, and when the wiring board 4 is viewed from the chip 2 side, A void 6 may be formed in a portion corresponding to the peripheral portion 101 (FIGS. 1-1 and 1-2). In other words, in the present invention, although the void 6 may be formed, die bonding is performed using an adhesive having an elastic modulus G in a specific range. The wiring board 4 and the chip 2 and the uncured adhesive 3 are in close contact with each other. It should be noted that even after die bonding, voids that may occur when the above-described dicing die bonding sheet is adhered (the interface between the uncured adhesive 3 and the wiring substrate 4, as seen from the chip 2 side). Sometimes, a void (not shown) formed in a portion corresponding to the chip inner peripheral portion 101 remains (FIGS. 1-1 and 1-2).

[2] Static pressure heating process In the static pressure heating process, before the curing is completed, the embedding index α represented by the following formula (1) is 75K ⁻¹ or less for the wiring board 4 on which the chip 2 is die-bonded. The pressure is preferably increased by static pressure and heated under the conditions of 0.5 to 70 K ⁻¹ (FIG. 1, I). That is, the uncured adhesive 3 is pressurized and heated by static pressure under the above conditions so that the adhesive 7 is cured halfway. In addition, the state hardened | cured to the middle means the state in which hardening is not completed, and the state in which hardening was completed means that reaction progresses and an adhesive agent cannot be deform | transformed.

α = [G / (P × T)] × 10 ⁶ (1)
(In the formula, P represents a pressure difference (Pa) from normal pressure, and T represents a heating temperature (K).)
In this step, since only the adhesive is not pressurized by pressurizing with static pressure, the adhesive does not roll up.

  Further, if the circuit board 4 die-bonded with the outer periphery of the chip in close contact is pressed and heated under static pressure under the above conditions, the uncured adhesive 3 becomes a cured adhesive 7 and is bonded. The voids (not shown) generated between the agent 3 and the chip 2 and the voids 6 generated between the adhesive 3 and the wiring board 4 can disappear (FIGS. 1-1 and 1-2). . In particular, even if the circuit board 4 is fine and the circuit design has a large height difference, the void 6 can be eliminated if the above conditions are adopted for the circuit board 4 die-bonded with the outer periphery of the chip in close contact. Therefore, as in the present invention, when an adhesive having an elastic modulus G in a specific range is adopted and the embedding index α is adjusted to the above range, the voids can be eliminated, so that generation of package cracks can be suppressed. The reliability of the manufactured semiconductor device can be improved. That is, according to the present invention, a highly reliable semiconductor device can be easily manufactured without depending on the substrate design.

  If an adhesive having the same elastic modulus G is used, the embedding index α decreases if the pressure P and the heating temperature T are increased, and the elastic modulus G decreases if the pressure P and the heating temperature T are the same. If an adhesive is used, the embedding index α becomes small. In this way, the embedding index α can be adjusted as appropriate.

  In the static pressure application step, P preferably has a pressure difference of 0.05 MPa or more from normal pressure, and more preferably has a pressure difference of 0.1 to 1.0 MPa from normal pressure. That is, a pressure larger than the normal pressure by 0.05 MPa or more, more preferably a pressure larger by 0.1 to 1.0 MPa is applied. T is appropriately set depending on the composition of the adhesive forming the adhesive 3, but is usually 100 to 200 ° C., preferably 120 to 180 ° C.

Moreover, time to heat while applying pressure becomes like this. Preferably it is 5-120 minutes, More preferably, it is 5-90 minutes.
The static pressure device is not particularly limited as long as a static pressure can be applied to the wiring substrate 4 to which the chip 2 is die-bonded and heated at the same time, but it is preferably performed by an autoclave (pressure vessel with a compressor) or the like.

[3] Heating step The heating step is performed by pressing the heated and heated wiring substrate (the wiring substrate 4 having the adhesive 7 cured halfway) in the hydrostatic pressing step [2] until the curing is completed. This is a step of heating without applying pressure. That is, the adhesive 7 that has been hydrostatically pressurized and heated and cured halfway is further heated to a sufficiently cured state (FIG. 1, II). More specifically, the adhesive that has been cured halfway by releasing the wiring board 4 from which the voids have disappeared in the static pressure application step [2] from the pressurizing device, and placing it in the heating device under atmospheric pressure. 7 is a step of setting the adhesive 8 to be cured. As a result, the adhesion performance required as an adhesive for die bonding of a semiconductor device is given. In addition, the wiring board 4 that has undergone the heating process [3] maintains the state after the static pressure application process [2], and between the adhesive 8 and the chip 2 and between the adhesive 8 and the wiring board 4. The void does not exist at the interface between them, and the chip 2 and the wiring board 4 are firmly bonded.

The heating temperature and the heating time are not particularly limited as long as the adhesive can be sufficiently cured, and depend on the composition of the adhesive forming the adhesive 3. The heating temperature is preferably 100 to 200 ° C, more preferably 120 to 180 ° C, and the heating time is preferably 15 to 300 minutes, more preferably 30 to 180 minutes.
There is no restriction | limiting in particular as a heating apparatus for performing thermosetting, The thermosetting apparatus (oven) used conventionally can be used.

[4] Assembling process The assembling process is a process for assembling a wiring board (wiring board 4 having adhesive 8 that has been cured) into a semiconductor device heated in the heating process. For example, a wire bonding process for connecting the wires 9 as shown in FIG. 1 and a molding process using the sealing resin 11 are performed (FIGS. 1, III, and IV). In this way, the semiconductor device 10 is manufactured. In the semiconductor device 10 obtained by the manufacturing method of the present invention, since the void does not exist at the interface between the adhesive 8 and the chip 2 and between the adhesive 8 and the wiring substrate 4, package cracks may occur. And has high reliability.

[Embodiment 2]
As described above, in the method for manufacturing the semiconductor device according to the present invention, the uncured adhesive 3 is cured halfway in the static pressure step [2], and is cured halfway in the heating step [3]. Although the embodiment (Embodiment 1) of heating until the cured adhesive 7 is sufficiently cured has been described, the uncured adhesive 3 is left in an uncured state in the static pressure application step [2] and heated. In step [3], pressurize and heat the heated and heated wiring board (wiring board 4 having uncured adhesive 3) in static pressure pressing process [2] until curing is completed. It may be a mode (Embodiment 2) in which heating is performed without performing this. That is, in the heating step [3] of the second embodiment, the uncured adhesive 3 is sufficiently cured to be the cured adhesive 8. Note that the state of being in an uncured state means that the curing reaction of the adhesive is not progressing.

  In this case, in the static pressure application step [2], P preferably has a pressure difference of 0.05 MPa or more from normal pressure, more preferably 0.1 to 1 .. 0 MPa. T is appropriately set depending on the composition of the adhesive forming the adhesive 3, but is usually 50 to 120 ° C., preferably 80 to 120 ° C.

Moreover, the time for applying pressure and heating is preferably 1 to 60 minutes, more preferably 5 to 30 minutes.
The heating step [3] and the assembling step [4] are performed in the same manner as in the first embodiment, and the semiconductor device finally obtained does not have the above-mentioned void at the interface, and the adhesive is sufficiently cured, and the chip And the wiring board are firmly bonded.

[Embodiment 3]
Further, the method for manufacturing a semiconductor device according to the present invention may be an embodiment (Embodiment 3) in which the uncured adhesive 3 is heated until it is sufficiently cured in the static pressure step [2]. That is, in the static pressure application step [2] of the third embodiment, the uncured adhesive 3 is sufficiently cured to be the cured adhesive 8.

  In this case, in the static pressure application step [2], P preferably has a pressure difference of 0.05 MPa or more from normal pressure, more preferably 0.1 to 1 .. 0 MPa. T is appropriately set depending on the composition of the adhesive forming the adhesive 3, but is usually 100 to 200 ° C., preferably 120 to 180 ° C.

Moreover, time to heat while applying pressure becomes like this. Preferably it is 15 to 300 minutes, More preferably, it is 30 to 180 minutes.
In the third embodiment, the semiconductor device can be manufactured by performing the assembly process [4] without performing the heating process [3]. In the finally obtained semiconductor device, the above-mentioned void does not exist at the interface, the adhesive is sufficiently cured, and the chip and the wiring board are firmly bonded.

[Embodiment 4]
Further, the manufacturing method of the present invention is not limited to the configuration of the semiconductor device obtained by the above-described aspect, and can be applied to the manufacture of semiconductor devices having various configurations.

  For example, the manufacturing method of the present invention may be applied to the manufacture of a multi-stack type semiconductor device (Embodiment 4). That is, you may use for the die-bonding process of the chip | tip which laminates | stacks the chip | tip 22 which comprises relatively upper part, and the chip | tip 25 which comprises relatively lower part via the unhardened adhesive agent 23 (FIG. 2). . Note that a wire may be connected to the chip 25. The chip 25 has an adhesive 26 and a chip mounting wiring board 27 in the lower part, and the chip 25 corresponds to the wiring board 4.

The semiconductor device obtained here may be a same size stack type semiconductor device having the same upper and lower sizes as shown in FIG. 2, or may be a stepped multi-stack type semiconductor device having different sizes. Further, the same size stack type semiconductor device may be used in which the adhesive 23 is laminated so as to embed the connected wires. In this case, voids generated around the wires can be eliminated, which is more preferable.
Such a multi-stack type semiconductor device manufacturing method may be performed using the chip 25 instead of the wiring substrate 4 in the above-described embodiment.

[Embodiment 5]
Further, the manufacturing method of the present invention may be used for a flip chip type semiconductor device as shown in FIG. 3 (Embodiment 5). In this case, an underfill material that is used for flip chip bonding and has an underfill layer and a substrate is used. In this case, the underfill layer corresponds to the uncured adhesive 3. As the thermosetting sheet-like underfill material, for example, the underfill material described in Japanese Patent Application Laid-Open No. 2006-261529 by the present applicants can be used.

  A manufacturing method using the underfill material is as follows. First, a semiconductor wafer having a bump formed on a circuit surface is prepared. An underfill material is attached to the circuit surface of the semiconductor wafer so that the underfill layer penetrates the bumps. Next, a normal dicing tape is attached to the back surface of the semiconductor wafer, fixed to the ring frame through this, and the semiconductor wafer is cut and separated using a dicing apparatus to obtain a chip. Subsequently, only the base material of the underfill material is peeled off to expose the bump tops. Thereby, the chip 32 in which the circuit surface is covered with the uncured adhesive 33 and the top of the bump 35 protrudes from the adhesive 33 is obtained. Next, the bumps 35 are aligned so as to face the electrode portions of the wiring board 34, and the chip 32 is placed on the wiring board 34 so as to ensure conduction between the chip 32 and the wiring board 34. In this way, a wiring board in which the chip and the uncured adhesive 33 (underfill layer) are laminated (flip chip bond) is obtained.

In this embodiment, using the flip-chip bonded wiring board obtained as described above, the same static pressure and pressurization step [2], heating step [3] and assembly step [4] as those described above are performed. This is done to manufacture a semiconductor device. In this embodiment, since the wire bonding process in the assembly process [4] is not required, a semiconductor device can be manufactured through a molding process after curing the uncured adhesive 33 (underfill material).
EXAMPLES Hereinafter, although this invention is demonstrated further more concretely based on an Example, this invention is not limited to these Examples.

[Example]
<Evaluation method>
1. Method of Measuring Elastic Modulus G The elastic modulus G is measured as follows because the adhesive contains an energy beam polymerizable compound (F) and a photopolymerization initiator (G) described later. First, an adhesive is laminated so as to be about 200 μm. At this time, a base material is laminated on both outer sides of the laminated adhesive. Next, ultraviolet rays (illuminance: 320 mW / cm ² , light amount: 180 mJ / cm ² ) are irradiated from both substrate surfaces by an ultraviolet irradiation device (manufactured by Lintec Corporation, Adwill RAD2000 m / 8). After ultraviolet irradiation, the base materials on both sides are peeled off, a plurality of adhesives are laminated so as to have a thickness of 1.0 mm, and this laminate is cut into 8 mmφ circles. Three of these are laminated to obtain a sample for measuring the elastic modulus G. Using this sample, the elastic modulus G at 120 ° C. was measured at a frequency of 1 Hz using a dynamic viscoelasticity measuring apparatus (RDA-II, manufactured by Rheometrics).

2. Calculation Method of Embedding Index α The embedding index α was determined by the following formula (1).
α = [G / (P × T)] × 10 ⁶ (1)
(In the formula, G represents the elastic modulus obtained in 1 above, P represents the pressure difference (Pa) from normal pressure, and T represents the heating temperature (K).)

3. Evaluation method of presence / absence of voids In Examples and Comparative Examples, transparent disc glass (manufactured by NSG Precision, diameter 8 inches, thickness 100 μm) instead of mirror-finished silicon wafer (diameter 8 inches, thickness 100 μm) The same operation was performed using. The wiring board on which the glass chip was die-bonded was able to see through the adhesive from the glass chip side, and the presence or absence of voids present on the inner periphery of the chip was observed with a digital microscope.
This evaluation was performed for each sample after the die bonding step, after the static pressure application step, and after the heating step.

4). Peripheral adhesion evaluation method The index β representing the adhesion of the outer periphery of the chip is the sum of the lengths of the portions where the uncured adhesive 3 is in close contact with the length of the outer periphery of the chip as shown in the following formula (2). Evaluate at the rate of.
β = total length of the portion where the adhesive is in close contact (II) / length of the outer periphery of the chip (I)
× 100 (%) (2)
For example, first, when the chip 2 is viewed from above (FIG. 4), the length (I) of the outer periphery of the chip (the total length of a, b, c, d) is obtained, and then the bonding is performed within the outer periphery of the chip. After determining the total length (II) (the total length of e, f, g, h, c, d) of the portion where the adhesive is in contact, excluding the portion 103 where the agent is not in close contact, It calculated | required by calculating by said Formula (2) ((beta) = (e + f + g + h + c + d) / (a + b + c + d) * 100 (%)).

  Specifically, the length (I) of the outer periphery of the chip was 32 mm because the glass chip was diced into 8 mm × 8 mm in a dicing process described later. The total length (II) of the portion where the adhesive is in close contact was measured by observing the wiring board after the die bonding step from the glass chip side with a digital microscope.

5. Method for evaluating reliability of semiconductor package In Examples and Comparative Examples, the semiconductor device (semiconductor package) after the assembly process (4) (sealing process) is left to stand for 168 hours at 85 ° C. and 60% RH to absorb moisture. Then, IR reflow (reflow furnace: WL-15-20DNX type, manufactured by Sagami Riko Co., Ltd.) with a maximum temperature of 260 ° C. for 1 minute was performed three times. Thereafter, the presence / absence of floating / peeling of the joint between the chip and the wiring substrate and the occurrence of package cracking were evaluated by cross-sectional observation using a scanning ultrasonic flaw detector (Hy-Focus manufactured by Hitachi Construction Machinery Finetech Co., Ltd.). . The case where peeling of 0.5 mm or more was observed at the joint was judged as “peeling occurred”. The above test was performed on 25 semiconductor packages, and the number of “no peeling occurred” was counted.

[Preparation of adhesive]
Adhesives 1 to 4 used in Examples and Comparative Examples were prepared using the components shown below in the ratios shown in Table 1. The number of blending parts in Table 1 indicates the solid content.

(A) Thermosetting resin (A1) Bisphenol A type flexible liquid epoxy resin (Dainippon Ink & Chemicals, EXA-4850-150) dissolved in organic solvent (methyl ethyl ketone) (solid content concentration: 80%)
(A2) A solution (solid content concentration: 65%) in which a solid bisphenol A type epoxy resin (Japan Epoxy Resin Co., Ltd., Epicoat 1055) is dissolved in an organic solvent (methyl ethyl ketone)
(A3) A solution in which bisphenol A type liquid epoxy resin (manufactured by Nippon Shokubai, BPA328) is dissolved in an organic solvent (methyl ethyl ketone) (solid content concentration: 80%)
(A4) Dicyclopentadiene skeleton-containing solid epoxy resin (manufactured by Dainippon Ink and Chemicals, EXA7200HH) dissolved in an organic solvent (methyl ethyl ketone) (solid content concentration: 80%)
(A5) Solution (solid content concentration: 80%) of dicyclopentadiene type epoxy resin (Nippon Kayaku, 1000-L) dissolved in organic solvent (methyl ethyl ketone)
(A6) Liquid bisphenol A type skeleton epoxy resin (Japan Epoxy Resin Co., Ltd., Epicoat 828)
(A7) o-cresol novolak type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., EOCN-104S).

(B) Thermally active latent curing agent
(B1) A solution in which dicyanamide (Adeka Hardener 3636AS, manufactured by Asahi Denka) is dispersed in an organic solvent (methyl ethyl ketone) (solid content concentration: 15%)
(B2) A solution (solid content concentration: 15%) in which an imidazole compound (manufactured by Shikoku Kasei Kogyo Co., Ltd., CureZole 2PHZ) is dispersed in an organic solvent (methyl ethyl ketone).

(C) acrylic copolymer 55 parts by weight of butyl acrylate, 10 parts by weight of methacrylic acid, 20 parts by weight of 2-hydroxyethyl acrylate, and 20 parts by weight of glycidyl methacrylate, and a weight average molecular weight of 800,000, glass A copolymer having a transition temperature of -28 ° C.

(D) Coupling agent Silane coupling agent (manufactured by Mitsubishi Chemical, MKC silicate MSEP2).
(E) Crosslinker aromatic polyvalent isocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd., Coronate L).

(F) Energy beam polymerizable compound
(F1) Dicyclopentadiene skeleton-containing acrylate (manufactured by Nippon Kayaku Co., Ltd., R684)
(F2) Dipentaerythritol hexaacrylate (manufactured by Nippon Kayaku Co., Ltd., Karayad DPHA).

(G) A solution (solid content concentration: 30%) of a photopolymerization initiator Irgacure 184 (manufactured by Ciba Specialty Chemicals) dissolved in an organic solvent (toluene).

(H) Thermoplastic resin A solution in which a polyester-based thermoplastic resin (byron 220, manufactured by Toyobo Co., Ltd.) is dissolved in an organic solvent (methyl ethyl ketone) (solid content concentration: 80%).

(I) Inorganic filler silica (manufactured by Admatechs, Admafine SC2050).

[Example 1]
(1) Die bonding process [Manufacturing of dicing die bonding sheet]
Adhesive 1 was applied to the release-treated surface of a release film (Lintec Co., Ltd., SP-PET 3811, thickness 38 μm) using a roll knife coater so that the dry film thickness was 30 μm. The release film coated with was dried at 100 ° C. for 2 minutes to obtain a film-like adhesive formed from the adhesive 1. Thereafter, an adhesive (adhesive) was laminated on a 100 μm-thick base material (polyethylene film, surface tension 31 mN / m) to prepare a die bonding sheet.

  On the other hand, as a pressure-sensitive adhesive sheet for fixing a ring frame, a pressure-sensitive adhesive sheet (a shape in which a circle having an inner diameter of 220 mm is cut and removed) formed by forming a re-peelable acrylic pressure-sensitive adhesive (thickness 10 μm) on a polyvinyl chloride film (thickness 80 μm) Prepared.

  Next, the release film of the die bonding sheet was peeled off, and the polyvinyl chloride surface of the ring frame fixing pressure-sensitive adhesive sheet was laminated on the adhesive surface. Subsequently, the pressure-sensitive adhesive sheet on which the ring-frame fixing pressure-sensitive adhesive sheet was laminated was cut into a circle having an outer shape of 270 mm so as to be concentric with the circle from which the ring-frame fixing pressure-sensitive adhesive sheet was cut and removed. In this manner, a dicing die bonding sheet having a donut-shaped ring frame fixing adhesive sheet on the outer peripheral portion was obtained.

[Dicing process (manufacture of chip with adhesive)]
The above-mentioned dicing die bonding sheet was attached to a mirror-finished silicon wafer (diameter 8 inches, thickness 100 μm) using a tape mounter (manufactured by Lintec, Adwill RAD 2500 m / 8), and simultaneously fixed to the ring frame. Then, the ultraviolet-ray was irradiated from the base-material surface with the ultraviolet irradiation device (the Lintec company make, Adwill RAD2000 m / 8). The conditions of ultraviolet irradiation were illuminance: 320 mW / cm ² and light amount: 180 mJ / cm ² .

  Next, the silicon wafer was diced into a size of 8 mm × 8 mm using a dicing apparatus (DFD 651 manufactured by DISCO Corporation) to obtain a chip with an adhesive. In addition, the cutting amount at the time of dicing was set so that it cut | disconnects 20 micrometers with respect to a base material.

[Lamination and die bonding process]
A circuit pattern is formed on a copper foil of a copper foil-clad laminate (CCL-HL830 manufactured by Mitsubishi Gas Chemical Co., Ltd.) as a wiring board for die-bonding the chip, and a solder resist (made by Taiyo Ink, PSR-4000 AUS5) is provided on the pattern. The substrate used is made by Chino Giken Co., Ltd. The diced chip was picked up together with an adhesive (uncured adhesive), and placed (laminated) on the wiring board via the adhesive. Next, pressure bonding (die bonding) was performed under the conditions of 100 ° C., 300 gf, and 1 second.

(2) Static pressure heating step The wiring board on which the chip is die-bonded is placed in a pressure drying furnace (manufactured by Sanyu Rec Co., Ltd.), and heated and bonded at 120 ° C. for 10 minutes under a static pressure 0.5 MPa higher than normal pressure. The voids existing between the adhesive and the chip and between the adhesive and the wiring substrate were removed, and the adhesive was cured halfway.

(3) Heating step After the wiring board was taken out from the pressure drying furnace, it was heated in an oven at normal pressure at 120 ° C. for 1 hour, and subsequently at 140 ° C. for 1 hour to complete the curing of the adhesive.

(4) Assembly process Wiring that has undergone a heating process so as to have a sealing thickness of 400 μm with a molding resin (Kyocera Chemical Co., Ltd., KE-1100AS3) using a sealing device (manufactured by Apic Yamada Co., Ltd., MPC-06M Trial Press) The substrate was sealed. Next, the sealing resin was cured at 175 ° C. for 5 hours. Furthermore, the sealed wiring board is affixed to a dicing tape (manufactured by Lintec, Adwill D-510T), and is diced to a size of 12 mm × 12 mm by a dicing apparatus (manufactured by Disco, DFD651), and is simulated without a wire using a chip. Obtained a semiconductor device.
The evaluation results are shown in Table 3-1.

[Example 2]
In Example 1, except that (2) the processing conditions in the static pressure heating step were changed to the conditions in Table 2, and (2) the adhesive remained uncured in the static pressure heating step A semiconductor device was obtained in the same manner as in Example 1.
The evaluation results are shown in Table 3-1.

[Example 3]
In Example 1, (2) the treatment conditions in the static pressure heating step were changed to the conditions shown in Table 2, and (2) the curing of the adhesive was completed in the static pressure heating step, and (3) the heating step was not performed. A semiconductor device was obtained in the same manner as in Example 1 except that.
The evaluation results are shown in Table 3-1.

[Examples 4 and 5]
(2) A semiconductor device was obtained in the same manner as in Example 3 except that the processing conditions in the static pressure heating step were changed to the conditions shown in Table 2.
The evaluation results are shown in Table 3-1.

[Example 6]
A semiconductor device was obtained in the same manner as in Example 3 except that the adhesive 1 was changed to the adhesive 2.
The evaluation results are shown in Table 3-1.

[Examples 7 and 8]
(2) A semiconductor device was obtained in the same manner as in Example 6 except that the processing conditions in the static pressure heating step were changed to the conditions shown in Table 2.
The evaluation results are shown in Table 3-1.

[Example 9]
A semiconductor device was obtained in the same manner as in Example 3 except that the adhesive 1 was changed to the adhesive 3 and (2) the processing conditions in the static pressure heating step were changed to the conditions shown in Table 2.
The evaluation results are shown in Table 3-1.

[Examples 10 and 11]
(2) A semiconductor device was obtained in the same manner as in Example 9 except that the processing conditions in the static pressure heating step were changed to the conditions shown in Table 2.
The evaluation results are shown in Table 3-1.

[Example 12]
First, as in Example 1, (1) Die bonding step [Lamination and die bonding step] was performed to obtain a wiring substrate on which the chip was die-bonded. Next, a chip with an adhesive obtained in the same manner as in Example 1 except that the silicon wafer was diced into a size of 5 mm × 5 mm was die-bonded onto the wiring substrate via the adhesive (adhesive). A multi-stack type in which chips are stacked by performing (2) a static pressure heating process, (3) a heating process, and (4) an assembling process, except that the chip is placed (stacked) on the chip. A semiconductor device was obtained.

[Comparative Example 1]
A semiconductor device was obtained in the same manner as in Example 3 except that the adhesive 1 was changed to the adhesive 4 and (2) the processing conditions in the static pressure heating step were changed to the conditions shown in Table 2.
The evaluation results are shown in Table 3-2.

[Comparative Examples 2 and 3]
(2) A semiconductor device was obtained in the same manner as in Comparative Example 1 except that the processing conditions in the static pressure heating step were changed to those in Table 2.
The evaluation results are shown in Table 3-2.

[Comparative Example 4]
(2) A semiconductor device was obtained in the same manner as in Example 9 except that the processing conditions in the static pressure heating step were changed to the conditions shown in Table 2.
The evaluation results are shown in Table 3-2.

2: Chip 3: Uncured adhesive 4: Wiring substrate 5: Void present in the adhesive 6: Void present at the interface between the wiring substrate and the adhesive 8: Cured adhesive 9: Wire 10: Semiconductor device 11: Sealing resin 101: Chip inner peripheral part 102: Chip outer peripheral part 103: Part where the adhesive is not in close contact I: Static pressure application step
II: Heating process
III: Wire bonding process
IV: Molding process 22: Chip 23 relatively constituting upper part (second layer): Uncured adhesive 25: Chip relatively constituting lower part (first layer) (wiring substrate)
26: Adhesive 27: Chip mounting wiring board 32: Chip 33: Uncured adhesive 34: Wiring board 35: Bump 42: Cured adhesive 43: Wire 44: Semiconductor device 45: Sealing resin V: Die bonding Process
VI: Wire bonding process
VII: Molding process

Claims (3)

When die-bonding the chip and the wiring substrate through an uncured adhesive, heating the wiring substrate on which the chip is die-bonded, and curing the uncured adhesive to manufacture a semiconductor device,
Before the curing is completed, the wiring substrate on which the chip is die-bonded is pressurized and heated by static pressure under the condition that the embedding index α represented by the following formula (1) is 75 K ⁻¹ or less. An adhesive used in a method for manufacturing a semiconductor device including a pressing step,
An adhesive having an elastic modulus G at 120 ° C. of 30000 Pa or less.
α = [G / (P × T)] × 10 ⁶ (1)
(In the formula, P represents a pressure difference (Pa) from normal pressure, and T represents a heating temperature (K).)   The adhesive according to claim 1, wherein the adhesive contains a thermosetting resin and an acrylic copolymer.   The die-bonding sheet which has a base material and the adhesive agent of Claim 1 on this base material.

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