JP2013069875A - Substrate transfer jig - Google Patents

Abstract

PROBLEM TO BE SOLVED: To house a substrate holder holding a substrate in a transfer apparatus with high accuracy.SOLUTION: The jig used when housing a wafer held by a wafer holder in a pod (hoop) capable of housing a plurality of wafers has a pedestal 91, a positioning block 92 and a grip 93. A recessed counterbore surface 91b is formed in the pedestal 91, three protrusions 91f for positioning the direction of rotation of the wafer holder are provided on the counterbore surface 91b, and the wafer holder is housed in the pod by performing the positioning by means of the protrusion 92a of the positioning block 92 and the pod.

Description

  The present invention relates to a substrate transport jig, and more particularly to a technique that is effective when applied to an increase in positional accuracy when a substrate is transferred and placed.

  Regarding a substrate processing apparatus provided with a transfer machine for transferring a substrate, there are provided three support parts in contact with the substrate on the arm part of the transfer machine, and a technology for supporting the substrate at three points by these three support parts, For example, it describes in patent document 1 (Unexamined-Japanese-Patent No. 2009-88395).

JP 2009-88395 A

  Silicon carbide (SiC, silicon carbide) is particularly attracting attention as an element material for power devices because it has a larger energy band gap and higher withstand voltage than silicon (Si, silicon).

  On the other hand, SiC has a higher melting point than Si, does not have a liquid phase under normal pressure, and has a low impurity diffusion coefficient, making it difficult to form substrates and devices compared to Si. Yes. For example, the SiC epitaxial film forming apparatus has a Si epitaxial film forming temperature of 900 ° C. to 1200 ° C., whereas SiC is as high as about 1500 ° C. to 1800 ° C. Technical ingenuity is necessary. Further, since the film formation proceeds by the reaction of two elements of Si and C 2, it is necessary to devise a technique that is not available in a silicon-based film formation apparatus for ensuring the film thickness and composition uniformity and for controlling the doping level.

As a mass-produced SiC epitaxial growth apparatus, apparatuses of a form called “pancake type” or “planetary type” are mainly used. Film formation is performed by arranging several to tens of SiC substrates in a plane on a susceptor heated to a film formation temperature by high frequency or the like and supplying a source gas or a carrier gas. C ₃ H ₈ (propane) and C ₂ H ₄ (ethylene) are often used as the C raw material, SiH ₄ (monosilane) is used as the Si raw material, and H ₂ (hydrogen) is used as the carrier. Add hydrogen chloride (HCl) to suppress silicon nucleation and improve crystal quality in the gas phase, or contain trichlorsilane (SiHCL ₃ ), tetrachlorosilane (SiCL ₄ ) containing chlorine (CL) in the structure. In some cases, raw materials such as silicon tetrachloride) are used. These SiC epitaxial film forming apparatuses have the following problems.

  18 to 20 are schematic diagrams of a pancake type film forming apparatus and a planetary type film forming apparatus. In such a structure of the reaction chamber 350, a silicon film forming material and a carbon film forming material are supplied from a gas supply unit 310 installed in the center to a planarly arranged SiC wafer (semiconductor wafer) 300 and exhausted. Is generally performed from the periphery, and the concentration distribution of the gas greatly changes from the supply port 320 to the exhaust port 330. In general, the film thickness non-uniformity caused by this may be avoided by rotating the SiC wafer 300 held by the SiC wafer 300 or the wafer holder 370 and the susceptor 340 provided with the induction coil 360 during film formation. (In the film forming apparatus shown in FIG. 19, the susceptor 340 is covered with a heat insulating material 380).

  In order to increase the number of substrates that can be processed at a time, the diameter of the susceptor 340 may be increased. However, when the diameter of the susceptor 340 is increased, there is a problem that the size of the apparatus increases and the cost increases. This problem becomes more serious as the wafer diameter increases. In addition, if two or more sheets are arranged from the gas supply direction to the gas exhaust port direction (radial direction), a difference in film thickness occurs between the processed wafers due to the above-mentioned gas concentration difference problem. There was a limited problem.

  On the other hand, a vertical film forming apparatus used in a silicon film forming apparatus stacks a plurality of (for example, 25 to 100) wafers in a vertical direction at a time with a footprint corresponding to one sheet and processes them in a batch. Having a structure that can be used is very advantageous for mass production.

  In such a vertical film forming apparatus capable of batch processing, the SiC wafer 300 can be automatically transferred. However, if it is transferred as it is, there is a concern that particles adhere to the SiC wafer 300.

  In addition, it takes a lot of time to carry out the batch-processed SiC wafers 300 from the apparatus one by one.

  For this reason, by mounting a tool capable of storing the SiC wafer 300 together in a FOUP (FOUP, transfer device), it is possible to carry out the batch operation and block the outside air.

  However, it is important in the film forming process to accurately carry the wafer holder (substrate holder) holding the SiC wafer 300 into the above-described tool disposed in the hoop.

  As described above, the SiC wafer 300 (hereinafter also simply referred to as a wafer) formed by the semiconductor film forming apparatus uses a transfer device called a hoop, and is transferred by loading a plurality of wafers in the hoop. Then, the wafer in the hoop is moved by the wafer transfer device or the like in the semiconductor film forming apparatus.

  In the wafer transfer apparatus used in such a semiconductor film forming apparatus, the position on which the wafer is placed is very important, and the wafer placement position in the hoop only slightly shifts. The stage of loading on a hoop not only causes particles to adhere to the top but also shifts the holding position when holding in the semiconductor film forming apparatus, affecting the uniformity of film formation on the wafer. It is necessary to install with high accuracy.

  The wafer is loaded into the hoop by the operator and is loaded through the operator's hand, but the work space in the hoop is narrow and difficult to perform. There is a problem that the installation position in the hoop varies between workers and the installation cannot be performed with high accuracy.

  Furthermore, it is a problem that manual work by an operator takes time and there is a possibility of contact with other wafers.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a technique capable of storing a substrate holder holding a substrate in a transfer apparatus with high accuracy.

  Another object of the present invention is to provide a technique capable of shortening the work time for storing the substrate holder holding the substrate in the transfer device.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

  A substrate transport jig according to the present invention is used when a substrate held by a substrate holder is stored in a transport device, and positioning of a base portion that supports the substrate holder and an outer peripheral portion of the substrate holder is performed. A first positioning unit that performs positioning, a second positioning unit that performs positioning in a rotational direction along the surface of the substrate holder, and a third positioning unit that performs positioning with respect to a rail unit that supports the substrate holder in the transport apparatus. And have.

  Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  The substrate can be stored in the transfer apparatus with high accuracy, and can be stored in a non-contact manner. Thereby, the adhesion of particles to the substrate can be reduced, and the quality of the film formed on the substrate can be improved.

  In addition, the work time for storing the substrate in the transfer apparatus can be shortened.

It is a conceptual diagram which shows an example of the structure of the reaction chamber of the film-forming apparatus used by the film-forming process of the board | substrate of embodiment of this invention in a partial cross section. It is a perspective view which permeate | transmits an example of the whole structure of the film-forming apparatus provided with the reaction chamber shown in FIG. It is a perspective view which shows an example of the structure of the board | substrate conveyance jig | tool of embodiment of this invention. It is a top view which shows an example of the structure of the board | substrate conveyance jig shown in FIG. It is a top view which shows an example of the structure which mounted the wafer holder in the board | substrate conveyance jig shown in FIG. It is a perspective view which shows an example of the installation state to the conveying apparatus of the substrate holder using the substrate conveying jig of embodiment of this invention. It is a top view which partially fractures and shows an example of the positioning state at the time of installation to the conveying apparatus of the substrate holder using the substrate conveying jig of embodiment of this invention. It is a perspective view which shows an example of the structure of the board | substrate holder hold | maintained by the board | substrate conveyance jig of embodiment of this invention. It is a conceptual diagram which shows an example of the consumption part of the reactive gas in the substrate holder shown in FIG. It is a perspective view which shows the structure of the board | substrate holder of the modification of embodiment of this invention. It is a conceptual diagram which shows the consumption part of the reactive gas in the substrate holder shown in FIG. It is a front view which shows an example of the structure of the bridge tool installed in the hoop of embodiment of this invention. It is a front view which shows an example of the state which accommodated the wafer holder in the hoop in which the bridge tool shown in FIG. 12 was installed. It is a top view which permeate | transmits and shows an example of the state at the time of lid | cover opening of the structure shown in FIG. It is a top view which permeate | transmits an example and shows an example of the state at the time of lid closing of the structure shown in FIG. It is a front view which shows an example of the state which accommodated the wafer holder in the hoop by which the bridge tool shown in FIG. 12 was eccentrically arranged. It is a top view which permeate | transmits an example and shows an example of the state at the time of lid closing of the structure shown in FIG. It is a conceptual diagram which shows the structure of the reaction chamber of the film-forming apparatus of a comparative example. It is a conceptual diagram which shows the structure of the reaction chamber of the film-forming apparatus of another comparative example. It is sectional drawing which shows the structure cut | disconnected along the AA of FIG.

  In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

  Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.

  Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps) are not necessarily indispensable unless otherwise specified and clearly considered essential in principle. Needless to say.

  Further, in the following embodiments, regarding constituent elements and the like, when “consisting of A”, “consisting of A”, “having A”, and “including A” are specifically indicated that only those elements are included. It goes without saying that other elements are not excluded except in the case of such cases. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

(Embodiment)
FIG. 1 is a conceptual diagram showing, in partial cross section, an example of the structure of a reaction chamber of a film forming apparatus used in a film forming process of a substrate according to an embodiment of the present invention. FIG. 2 is provided with the reaction chamber shown in FIG. 1 is a perspective view showing an example of the overall structure of a film forming apparatus that is transparent to the inside.

  First, the structure of the reaction chamber 44 shown in FIG. 1 and the whole film forming apparatus shown in FIG. 2 used in the film forming process of this embodiment will be described.

  First, FIG. 1 illustrates the configuration of the reaction chamber of the vertical SiC film forming apparatus and its surroundings. In the reaction chamber 44 and its surroundings, a reaction tube 42 mainly made of quartz forming a reaction space, and an induction coil 50 for heating the wafer (semiconductor wafer) 14 shown in FIG. , A support 51 made of an insulating material (for example, a ceramic material such as alumina) for supporting the induction coil 50, and a heated object 48 made of carbon graphite whose surface is coated with SiC that generates heat due to eddy current generated by the induction coil 50; A heat insulating material 54 mainly composed of carbon fiber (carbon felt) for preventing the temperature of the wall of the reaction tube 42 from rising due to the radiant heat radiated from the heated object 48 heated to the temperature is provided. A housing cover 58 for preventing leakage of electromagnetic waves and heat to the outside is provided on the outside of the reaction tube 42. A water cooling plate 55 provided with water cooled pulp 55a is installed in the heater chamber 58a between the housing covers 58.

  In the reaction chamber 44, a wafer holder 100 made of SiC-coated carbon graphite for preventing the film formation on the back surface of the wafer 14, and a plurality of wafer holders 100 on which the wafer 14 is set are held in a laminated state, and the surface is coated with SiC. Boat 30 made of carbon graphite, raw material tanks 70a, 70b, 70c, 70d for supplying a raw material gas to the wafer 14, valves 74a, 74b, 74c, 74d, flow controllers (also referred to as mass flow controllers) 72a, 72b. , 72c, 72d, gas nozzles 62, 65 connected to each other, an exhaust nozzle 66 connected to the pump 80 via a pressure regulating valve 79 for forming a uniform gas flow between the wafers 14, and the reaction chamber 44. Lower heat insulating means 34 for preventing temperature rise of the lower sealing member, A rotating shaft 104 for rotating the wafer 14 during processing so that the film thickness on the substrate 14 is uniform, and a vertical movement means (not shown) for loading and unloading the laminated wafer 14 to and from the reaction chamber 44 are connected. A seal body 102 or the like for sealing the opening at the bottom of the reaction chamber 44 is provided.

  The gas nozzle 62 supplies a carbon-based material and is made of quartz, and a supply nozzle 62a made of graphite is attached to the tip side of the gas nozzle 62. The gas nozzle 65 supplies Si-based material and is made of quartz.

  On the other hand, the exhaust nozzle 66 is made of quartz, and an exhaust nozzle 66a made of graphite is attached to the front end side thereof.

  Next, the operation of the vertical SiC film forming apparatus shown in FIG. 1 will be described.

  A boat 30 mounted with a plurality of wafer holders 100 fixed on the seal body 102 and having wafers 14 set thereon is loaded into the reaction chamber 44 by means of vertical movement means (not shown), and the space of the reaction chamber 44 is reduced. Seal. Then, while introducing an inert gas (for example, Ar) into the furnace, the space in the reaction chamber 44 is brought to a desired pressure by the pump 80 connected through the exhaust pipe 76 and the pressure regulating valve 79. High frequency power (for example, 10 to 100 KHz, 10 to 200 KW) is applied to the induction coil 50 provided on the outer periphery of the reaction chamber 44 to generate an eddy current in the heated body 48, and a desired processing temperature (by Joule heat) ( 1500-1800 ° C). As a result, the wafer 14, the wafer holder 100, and the boat 30 disposed inside the heated body 48 are heated to a temperature equivalent to the temperature of the heated body 48 by the radiant heat radiated from the heated body 48.

On the other hand, in the vicinity of the opening at the bottom of the reaction chamber 44, the temperature is kept low (about 200 ° C.) by the lower heat insulating means 34 due to the heat resistance of the seal member (O-ring or the like). Si-based materials (SiCL ₄ , other SiH ₄ , TCS, DCS, etc. in the figure) in which a carrier gas is mixed from the gas nozzle 65, the gas nozzle 62, and the supply nozzle 62 a to the wafer 14 maintained at the processing temperature (1500 to 1800 ° C.). And carbon-based material (C ₃ H ₈ , other C ₂ H _4, etc. in the figure) are supplied, and SiC epitaxial film formation is performed while controlling the inside of the reaction chamber 44 to a desired pressure by a valve (pressure regulating valve) 74d. . During film formation, the rotating shaft 104 rotates in order to ensure uniformity within the wafer 14 surface.

A liner tube (quartz tube) 45 is installed outside the reaction tube 42 in order to prevent explosion due to leakage of the carrier gas (H ₂ ). Further, in order to prevent explosion due to leakage from the inlet adapter 59 provided with a port for supplying gas or starting exhaust, a scavenger 46 is installed in the vicinity thereof. Further, the space between the reaction tube 42 and the liner tube 45 and the scavenger 46 are made the same atmosphere with the heater base 47 as a boundary.

Here, the liner tube 45 has an upper opening nozzle 49 welded to the inside thereof. By supplying N ₂ from the connection port, the atmosphere is gradually pushed out from the upper part of the liner tube 45 toward the lower scavenger 46 side. N ₂ atmosphere will be developed. Extruded air is connected to the duct 43 through a hole opened in the heater base 47 and is exhausted from here. The scavenger 46 has a structure that can be sealed with the inlet adapter 59. The duct 43 is connected to the gas detector 39 so that O ₂ and H ₂ can be detected. With such a structure, when H ₂ leaks out of the reaction tube 42, it is possible to prevent an explosion due to air mixing and to detect the leak.

  Next, the configuration of a heat treatment apparatus (substrate processing apparatus) 10 that is an entire configuration including a vertical SiC film forming apparatus will be described with reference to FIG.

  The heat treatment apparatus 10 shown in FIG. 2 is a batch type vertical heat treatment apparatus, and has a casing 12 in which a main part for substrate heat treatment is arranged. In the heat treatment apparatus 10, for example, a hoop (hereinafter also referred to as a pod) 16 as a substrate container for accommodating the wafer 14 of FIG. 8 which is a substrate made of SiC is used as a wafer carrier. The pod 16 is a container (conveying device) capable of storing a plurality of wafers 14 or wafer holders 100 stacked in the height direction at predetermined intervals.

  A pod stage 18 is disposed on the front side of the housing 12, and the pod 16 is conveyed to the pod stage 18. For example, 25 wafers 14 or wafer holders 100 are accommodated in the pod 16 and set on the pod stage 18 with the lid closed.

  A pod transfer device 20 is disposed on the front side in the housing 12 and at a position facing the pod stage 18. Further, a pod shelf 22, a pod opener 24, and a substrate number detector 26 are disposed in the vicinity of the pod transfer device 20. The pod shelf 22 is disposed above the pod opener 24 and configured to hold a plurality of pods 16 mounted thereon. The substrate number detector 26 is disposed adjacent to the pod opener 24. The pod carrying device 20 carries the pod 16 among the pod stage 18, the pod shelf 22, and the pod opener 24. The pod opener 24 opens the lid of the pod 16, and the substrate number detector 26 detects the number of wafers 14 in the pod 16 with the lid opened.

  In addition, a substrate transfer machine 28 and a boat 30 as a substrate support are disposed in the housing 12. The substrate transfer machine 28 has an arm (tweezer) 32 and has a structure that can be rotated up and down by a driving means (not shown). The arm 32 can take out, for example, five wafers 14 and the wafer holder 100. By moving the arm 32, the wafer 14 and the wafer holder 100 are interposed between the pod 16 and the boat 30 placed at the position of the pod opener 24. Transport.

  The boat 30 is made of a heat-resistant material such as carbon graphite or silicon carbide, for example, and holds a plurality of wafers 14 and the wafer holder 100 in a horizontal posture and in a state where the centers are aligned with each other in multiple stages in the vertical direction. It is configured as follows. In addition, a boat heat insulating portion 35 as a disk-shaped heat insulating member made of a heat resistant material such as quartz or silicon carbide is disposed at the lower portion of the boat 30, and a heated body 48 (a susceptor) ( The heat from the processing furnace 40 is not easily transmitted to the lower side of the processing furnace 40 (see FIG. 1).

  In the heat treatment apparatus 10 shown in FIG. 2, a processing furnace 40 is disposed in the upper part on the back side in the housing 12, and the boat 30 loaded with a plurality of wafers 14 or the wafer holder 100 is carried into the processing furnace 40. Heat treatment is performed.

  In the heat treatment apparatus 10, a bridge tool 88 as shown in FIG. 6 described later may be provided in a pod (hoop) 16 used as a wafer carrier. The bridge tool 88 is provided in a shape (size) corresponding to the outer peripheral portion of the small-diameter wafer 14 so that the small-diameter wafer 14 can be accommodated even if it is the pod 16 for the large-diameter wafer. The wafer support part (rail part) 88d is provided in a plurality of stages, and the bridge tool 88 is arranged so that the wafer 14 or the wafer holder 100 having a small diameter can be used even for the pod 16 for a large diameter wafer. can do.

  That is, the small-diameter wafer 14 of the present embodiment is first held by the wafer holder 100 and stored in the pod (hoop) 16 while being held by the wafer holder 100.

  Therefore, in the heat treatment (film formation process) of the SiC wafer 14 using the heat treatment apparatus 10, the wafer holder 100 holding the wafer 14 can be stored in the bridge tool 88 in the pod 16 with high accuracy. This leads to the accuracy of the posture of the wafer holder 100 on the boat 30 when the wafer holder 100 is transferred to the boat 30 of the apparatus 10.

  That is, the posture accuracy of the wafer holder 100 when the wafer holder 100 holding the wafer 14 is accommodated in the pod 16 is very important in the film forming process.

  In the present embodiment, when the wafer holder 100 holding the wafer 14 is stored in the pod 16, the wafer holder 100 is stored in the pod 16 using a jig (substrate transfer jig).

  Next, the structure of the substrate transfer jig according to the present embodiment and the method of storing the wafer holder 100 in the pod (hoop) 16 using the substrate transfer jig will be described with reference to FIGS.

  3 is a perspective view showing an example of the structure of the substrate transfer jig according to the embodiment of the present invention, FIG. 4 is a plan view showing an example of the structure of the substrate transfer jig shown in FIG. 3, and FIG. 5 is shown in FIG. FIG. 6 is a perspective view showing an example of a state in which the substrate holder is installed in the transfer device using the substrate transfer jig according to the embodiment of the present invention. FIG. 7 is a partially cutaway plan view showing an example of a positioning state when the substrate holder is installed in the transfer apparatus using the substrate transfer jig according to the embodiment of the present invention.

  A wafer transfer jig 90, which is a substrate transfer jig shown in FIG. 3, is held by a wafer holder 100, which is a substrate holder, on a pod (hoop: transfer apparatus for wafer 14) 16 used in the heat treatment apparatus 10 shown in FIG. It is a jig used when the wafer 14 is stored.

  The structure of the wafer transfer jig 90 will be described with reference to FIGS. 3 to 5. The plate-shaped pedestal portion 91 that supports the disk-shaped wafer holder 100 holding the wafer 14 as shown in FIG. The grip portion 93 is a portion that is held (gripped) by an operator when handling the 90. The grip portion 93 is fixed to the pedestal portion 91 with screws, for example.

  Here, the base portion 91 is formed with a counterbore surface 91b that is one step lower than the upper surface (front surface) 91a, and the wafer holder 100 is mounted on the counterbore surface 91b. Further, portions where the upper surface 91a is lowered to the counterbore surface 91b are portions for positioning the outer peripheral portion of the wafer holder 100 as dropping portions 91c, 91d, 91e. That is, the drop portions 91c, 91d, 91e, which are the first positioning portions, have a shape along the outer peripheral shape corresponding to the outer peripheral shape of the wafer holder 100. Therefore, in the present embodiment, the drop portions 91c, 91d. , 91e are formed in an arc shape along the outer peripheral shape of the wafer holder 100, respectively.

  Thus, when the wafer holder 100 is mounted on the counterbore surface 91b, the outer peripheral portion of the wafer holder 100 is positioned by the arc-shaped drop portions 91c, 91d, 91e as shown in FIG.

  As shown in FIGS. 3 and 4, the counterbore surface 91 b is provided with three top-like protrusions 91 f that are second positioning portions protruding upward. The protrusion 91f is used for positioning in the rotational direction along the surface of the wafer holder 100 when the wafer holder 100 is mounted on the counterbore surface 91b, and is formed by three holes formed in the wafer holder 100 as shown in FIG. One protrusion 91f enters (arranges) one each into a certain first communication hole 112a, second communication hole 112b, and third communication hole 112c, so that the rotation direction of the wafer holder 100 on the counterbore surface 91b is positioned. Is done.

  With the above structure, the wafer holder 100 is positioned with respect to the wafer transfer jig 90.

  Next, positioning of the wafer transfer jig 90 and the pod (hoop) 16 will be described.

  Positioning blocks 92 that are third positioning portions are attached to the left and right sides of the base portion 91 of the wafer transfer jig 90. That is, the positioning block 92 is attached to the side portions on both sides of the pedestal portion 91 by, for example, screw fixing, and includes protruding portions 92 a that protrude outward from the side portions of the pedestal portion 91.

  As a result, when the wafer holder 100 is housed in the pod 16, as shown in part A of FIG. 7, a rail part for supporting the wafer holder 100 in the pod 16 (here, the wafer support part of the bridge tool 88 shown in FIG. 6). The protruding portion 92a of the positioning block 92 is abutted against the end portion 88e) of the (rail portion) 88d to position the wafer transfer jig 90 and the pod 16.

  Further, as shown in FIGS. 3 and 4, a notch 91 g is formed at the tip of the pedestal 91 of the wafer transfer jig 90. When the wafer holder 100 is housed in the pod 16, the notch 91g abuts the notch 91g of the pedestal 91 against the positioning column 88f of the bridge tool 88 as shown in FIG. The jig 90 is prevented from rotating in the horizontal direction (positioning of the wafer transfer jig 90 in the rotational direction).

  Further, the maximum width M of the counterbore surface 91b of the base 91 of the wafer transfer jig 90 shown in FIG. 4 is slightly smaller than the distance L between the wafer support portions 88d of the bridge tool 88 in the pod 16 shown in FIG. ing.

  Next, the storing operation of the wafer holder 100 in the pod 16 using the wafer transfer jig 90 will be described.

  First, as shown in FIG. 5, the wafer holder 100 holding the wafer 14 of FIG. 8 is mounted on the counterbore surface 91b of the base 91 of the wafer transfer jig 90 shown in FIGS. At that time, the outer peripheral portion of the wafer holder 100 is positioned by the arc-shaped drop portions 91 c, 91 d, 91 e formed in the pedestal portion 91.

  Further, the three protrusions 91f formed on the counterbore surface 91b of the wafer transfer jig 90 are arranged one by one in the first communication hole 112a, the second communication hole 112b, and the third communication hole 112c of the wafer holder 100, respectively. Then, the rotation direction of the wafer holder 100 mounted on the counterbore surface 91b is positioned.

  In this state, as shown in FIGS. 6 and 7, the operator holds the grip portion 93 and stores the wafer holder 100 in the pod 16 using the wafer transfer jig 90.

  With the front cover 16a (see FIG. 15) opened as shown in FIG. 6, the wafer holder 100 mounted on the wafer transfer jig 90 is stored in the pod 16 as shown in FIG.

  First, as shown in part B of FIG. 7, the notch 91g at the tip of the pedestal 91 is abutted against the positioning column 88f of the bridge tool 88 to position the wafer transfer jig 90 in the rotational direction. As shown in part A, the wafer transfer jig 90 and the pod 16 are positioned by abutting the protrusion 92a of the positioning block 92 against the end 88e of the wafer support 88d of the bridge tool 88 in the hoop 16.

  At this time, the maximum width M of the counterbore surface 91b of the base portion 91 of the wafer transfer jig 90 shown in FIG. 4 is slightly smaller than the distance L between the left and right wafer support portions 88d in the bridge tool 88 shown in FIG. The wafer transfer jig 90 is guided by the left and right wafer support portions 88d in the bridge tool 88, whereby the wafer transfer jig 90 is positioned in the horizontal direction and the rotation direction.

  Thereafter, the wafer transfer jig 90 is slightly lowered, and each of the three projections 91f of the counterbore surface 91b is removed from the first communication hole 112a, the second communication hole 112b, and the third communication hole 112c of the wafer holder 100 to remove the wafer. Only the conveying jig 90 is unloaded from the pod 16 (taken out).

  Thereby, the wafer holder 100 is accommodated in the pod 16 with high accuracy.

  Next, wafer holder 100 that is a substrate holder used in the present embodiment will be described.

  FIG. 8 is a perspective view showing an example of the structure of the substrate holder held by the substrate transport jig according to the embodiment of the present invention, and FIG. 9 is a conceptual diagram showing an example of the reactive gas consumption portion in the substrate holder shown in FIG. It is.

  The wafer holder 100 on which the wafer 14 is mounted is formed in a disk shape as shown in FIGS. 8 and 9, and the wafer holder 100 includes an annular holder base 110 and a disk-shaped holder cover 120. Here, both the holder base 110 and the holder cover 120 are each formed of a heat-resistant material such as SiC. The holder base 110 constitutes the wafer holder in the present embodiment, and the holder cover 120 constitutes the lid member in the present embodiment. As described above, the holder cover 120 covers the upper surface 14 b of the wafer 14, so that the wafer 14 can be protected from particles (fine dust) falling from the upper side of the wafer 14.

  The outer diameter of the holder base 110 constituting the wafer holder 100 is set to be larger than the outer diameter of the wafer 14. A through hole 110a that penetrates the holder base 110 in the axial direction is provided at the center portion of the holder base 110, and an annular stepped portion 111 is formed at the inner periphery of the through hole 110a. The annular step 111 holds the wafer 14.

  Thus, by holding the wafer 14 on the annular stepped portion 111 of the holder base 110, the wafer 14 can be accurately positioned (mounted) on the center portion of the holder base 110, and each boat column 31a to 31c and the wafer can be positioned. 14 can be kept away. Further, by holding the wafer 14 on the annular stepped portion 111, the lower surface 14 a serving as the film formation surface of the wafer 14 can be exposed to the atmosphere in the reaction chamber 44.

  The holder base 110 includes a main body part 112 and a thin part 113, and the thin part 113 is formed thinner than other parts of the holder base 110, that is, the main body part 112. The main body portion 112 and the thin portion 113 are arranged to face each other along the radial direction of the holder base 110. In a state where the wafer holder 100 is transferred to the boat 30 of FIG. 2, portions corresponding to the boat pillars 31 a to 31 c of the main body portion 112 are along the thickness direction of the main body portion 112, that is, the axial direction of the wafer holder 100. A first communication hole 112a, a second communication hole 112b, and a third communication hole 112c penetrating in this manner are provided.

  Each of the communication holes 112 a to 112 c is formed in the same shape, and is formed in a long hole shape along the circumferential direction of the holder base 110. The length dimension of each communication hole 112a to 112c along the circumferential direction of the holder base 110 is set larger than the width dimension of each boat column 31a to 31c, while the radial direction of the holder base 110 of each communication hole 112a to 112c. Is set to a large dimension that can secure at least the minimum strength of the holder base 110. That is, the width dimension of the portion corresponding to each of the boat pillars 31 a to 31 c along the radial direction of the main body 112 is set to a small dimension (narrow) that can secure at least the minimum strength of the holder base 110.

  Between the first communication hole 112a (first boat column 31a) and the second communication hole 112b (second boat column 31b) along the circumferential direction of the main body 112, and the first communication hole 112a (first boat column 31a). A pair of cutout portions 112d that reduce the width dimension along the radial direction of the main body portion 112 is formed between the first communication hole 112c and the third communication hole 112c (third boat column 31c). Each notch 112d is formed in the same shape. The length dimension along the circumferential direction of the main body part 112 of each notch part 112d is set to a length dimension that extends to positions where both end sides thereof face the communication holes 112a to 112c. Here, each of the communication holes 112a to 112c and the notches 112d are provided in consideration of consumption of the reaction gas by the boat columns 31a to 31c, and these functions will be described later.

  The thin portion 113 is disposed between the second boat column 31b and the third boat column 31c, and for example, cuts the upper surface 14b side of the holder base 110 opposite to the lower surface 14a side of the wafer 14 (cutting). It is formed by. The thin portion 113 does not include a communication hole or a notch like the main body portion 112. In addition, the thickness dimension of the thin portion 113 is set to be approximately half the thickness dimension of the main body portion 112. In the present embodiment, for example, the thickness dimension of the main body 112 is set to 4 mm, and the thickness dimension of the thin portion 113 is set to 2 mm. The thickness dimension of the wafer 14 is set to 1 mm, for example.

  Here, by providing the thin portion 113, the weight balance of the holder base 110 is improved between the main body portion 112 side and the thin portion 113 side sandwiching the center of the holder base 110. That is, corresponding to the weight reduction of the main body part 112 by providing each communication hole 112a-112c and each notch part 112d provided in the main body part 112, the opposite side is made into the thin part 113, and both are made into substantially the same weight. . As a result, the wafer holder 100 on which the wafers 14 are mounted is prevented from being tilted or rattling on the boat 30 during transfer.

  The holder cover 120 includes a large-diameter main body 121 and a small-diameter fitting portion 122, and the small-diameter fitting portion 122 enters and is attached to the annular step portion 111 of the holder base 110. Thereby, rattling of the holder cover 120 with respect to the holder base 110 is suppressed. The small-diameter fitting portion 122 sandwiches the wafer 14 between the annular stepped portion 111 and is in contact with the upper surface (non-deposition surface) 14 b opposite to the lower surface 14 a that is the film formation surface of the wafer 14. In this way, by configuring the holder cover 120 so as to be in contact with the upper surface 14b, it is possible to prevent the reaction gas (film forming gas) from entering the upper surface 14b and prevent the upper surface 14b from being formed.

  FIG. 9 is a view seen from above with the holder cover 120 of the wafer holder 100 omitted, and the wafer 14 is hatched. The wafer holder 100 on which the wafers 14 are mounted is rotated in the direction of the broken line arrow R in the reaction chamber 44 by the rotation of the boat 30 accompanying the rotational drive of the rotating shaft 104 shown in FIG. In FIG. 9, in order to explain the consumption of the reaction gas by the holder base 110 that forms the wafer holder 100, the first virtual rectangle VR <b> 1 and the second virtual rectangle VR <b> 2 that extend from the radially outer side of the wafer holder 100 to the center O of the wafer holder 100. And a third virtual rectangle VR3 (two-dot chain line in the figure). Here, the width dimension along the short direction of each virtual rectangle VR1 to VR3 is the width dimension (diameter dimension) of each boat column 31a to 31c.

  The first virtual rectangle VR1 is provided in a portion corresponding to the first boat column 31a, and the surface area of the wafer holder 100 (holder base 110) in the portion of the first virtual rectangle VR1 is S1 (shaded portion in the figure) in total. Is set. The surface area S1 of the holder base 110 (main body portion 112) is set to a small value depending on the size of the first communication hole 112a.

  Here, in FIG. 9, the first virtual rectangle VR1 is shown only in the part corresponding to the first boat column 31a, but the first virtual rectangle VR1 is also shown in the part corresponding to the second boat column 31b and the third boat column 31c. The same virtual rectangle as the virtual rectangle VR1 can be described. That is, the surface area of the holder base 110 in the virtual rectangle (not shown) corresponding to the second boat column 31b and the third boat column 31c is also set to S1 in the same manner as described above.

  The second virtual rectangle VR2 is a position where the first virtual rectangle VR1 is tilted 45 degrees to the left in the drawing with the center O of the wafer holder 100 as the center, that is, an intermediate position between the first boat column 31a and the second boat column 31b. It is provided at a position rotated up to. The surface area of the holder base 110 in the portion of the second virtual rectangle VR2 is set to a surface area S2 (shaded portion in the drawing) larger than the surface area S1 of the portion of the first virtual rectangle VR1, that is, the surface area S1 of the portion of the first virtual rectangle VR1. Is smaller than the surface area S2 of the portion of the second virtual rectangle VR2 (S1 <S2). The main body 112 in the second virtual rectangle VR2 is provided with a notch 112d. However, the notch 112d has a width dimension along the radial direction of the wafer holder 100 in the notch 112d. Since the width dimension along the radial direction of the wafer holder 100 of the corresponding first communication hole 112a is larger, the surface area S2> surface area S1.

  Here, in FIG. 9, the second virtual rectangle VR2 is shown only between the first boat column 31a and the second boat column 31b, but between the first boat column 31a and the third boat column 31c. Also, the same virtual rectangle as the second virtual rectangle VR2 can be described. That is, the surface area of the holder base 110 is also set to S2 in the virtual rectangle (not shown) at the intermediate position between the first boat column 31a and the third boat column 31c as described above.

  The third virtual rectangle VR3 is centered on the center O of the wafer holder 100, and the first virtual rectangle VR1 is inclined 180 degrees to either the left or right side in the drawing, that is, the second boat column 31b and the third boat column 31c. In between, it is provided in the position rotated to the intermediate position of the thin part 113 in the other side of the 1st boat pillar 31a on both sides of the center O. The surface area of the holder base 110 in the portion of the third virtual rectangle VR3 is set to a surface area S3 (shaded portion in the figure) larger than the surface area S2 of the portion of the second virtual rectangle VR2, that is, the surface area S2 of the portion of the second virtual rectangle VR2. Is smaller than the surface area S3 of the third virtual rectangle VR3 by the amount of the notch 112d (S2 <S3).

  Thus, the surface area of the holder base 110 corresponding to each of the boat pillars 31a to 31c is S1, and between the first boat pillar 31a and the second boat pillar 31b and between the first boat pillar 31a and the third boat pillar 31c. The surface area of the holder base 110 between the second boat column 31b and the third boat column 31c is S3, and the surface area of the holder base 110 between the second boat column 31b and 31c is S3, and the magnitude relationship between these is S1 <S2 <S3. As a result, as indicated by the arrows in the figure, the reaction gas supplied from the first gas supply ports 60 of the first gas supply nozzle 61 passes through the boat columns 31a to 31c in portions corresponding to the boat columns 31a to 31c. It is consumed in the portion (consumption position A) of 31c and surface area S1. In addition, between the first boat column 31a and the second boat column 31b and between the first boat column 31a and the third boat column 31c, the reactive gas is consumed at the surface area S2 (consumption position B). Further, between the second boat column 31b and the third boat column 31c, the reaction gas is consumed at the surface area S3 (consumption position C).

  Here, the consumption amount of the reactive gas at each of the consumption positions A to C is balanced so as to be substantially the same consumption amount in any part. For example, at the consumption position C, the consumption is 20% at the surface area S3 of the holder base 110, at the consumption position A, the consumption is 18% at each boat column 31a to 31c, and the consumption is 2% at the surface area S1 of the holder base 110. It becomes. The consumption position B is closer to the boat pillars 31a to 31c than the consumption position C, and this influences the consumption (consumption amount 5%) in the boat pillars 31a to 31c. For this reason, at the consumption position B, the notch 112d is provided to finely adjust the consumption amount of the reaction gas (adjustment so that the consumption amount is 15%).

  In this way, the amount of reaction gas consumed at each of the consumption positions A to C is balanced, that is, the amount of reaction gas consumed until reaching the wafer 14 in all the portions of each of the consumption positions A to C is substantially reduced. The concentration of the reaction gas until reaching the wafer 14 can be made substantially uniform. That is, the size of each of the communication holes 112a to 112c and the size of the notch 112d in the present embodiment may be set in consideration of the reaction gas consumption as described above.

  Next, a wafer holder (substrate holder) 200 according to a modification of the present embodiment will be described. FIG. 10 is a perspective view showing a structure of a substrate holder according to a modification of the embodiment of the present invention, and FIG. 11 is a conceptual diagram showing a consumption part of the reactive gas in the substrate holder shown in FIG.

  In the substrate holder of the modified example, only the shape of the holder base 210 that forms the wafer holder 200 is different from that of the wafer holder 100 described above. That is, in the wafer holder 100, the holder base 110 is provided with a pair of notches 112d (see FIG. 8) and the outer peripheral side thereof is non-circular, whereas in the modified example, the holder base 210 is not provided with each notch 112d. The outer peripheral side is circular. The holder base 210 includes a pair of cutout holes 211 instead of the cutout portions 112d, and the cutout holes 211 have the same functions as the cutout portions 112d. Each punched hole 211 is provided between the first boat column 31a and the second boat column 31b, and between the first boat column 31a and the third boat column 31c, and is a holder that extends along the axial direction of the wafer holder 200. The main body part 212 of the base 210 is provided through.

  Since each punched hole 211 (wafer holder 200) is disposed radially inward relative to each notch 112d (wafer holder 100), the surface area S20 of the portion of the second virtual rectangle VR2 of the holder base 210 (see FIG. 11). ) And the surface area S2 shown in FIG. 9 are made substantially the same surface area, the width dimension along the radial direction of each punched hole 211 is made larger than the width dimension along the radial direction of each notch 112d. . Thus, the weight of the holder base 210 on the main body 212 side is lighter than the weight of the holder base 110 on the main body 112 side shown in FIG. Therefore, in order to balance the weight on the main body 212 side with respect to the center O of the holder base 210 and the weight on the thin part 213 side, the thin part 213 is provided with an arc hole 213a. The arc hole 213 a is provided through the thin portion 213 of the holder base 210 along the axial direction of the wafer holder 200.

  Here, the surface area S30 of the third virtual rectangle VR3 of the holder base 210 is slightly smaller than the surface area S3 shown in FIG. 9, and accordingly, the first and second virtual rectangles VR1 and VR2 The surface areas S10 and S20 of the portions are also set slightly smaller than the surface areas S1 and S2 shown in FIG. Thereby, like the wafer holder 100, the concentration of the reaction gas reaching each wafer 14 is made substantially uniform over the entire circumference. Note that the film thickness state of the wafer 14 by the modified wafer holder 200 is substantially the same as that of the wafer holder 100.

  As described above, the wafer holder 200 according to the modified example can achieve the same effects as those of the wafer holder 100 described above. In addition, in the modified wafer holder 200, the wafer holder 200 (holder base 210) is provided between the first boat column 31a and the second boat column 31b and between the first boat column 31a and the third boat column 31c. Since the respective perforations 211 along the axial direction are provided, the outer peripheral side of the holder base 210 can be made circular. Therefore, it is possible to suppress the disturbance of the flow direction of the reaction gas supplied from the first gas supply port 60 of the first gas supply nozzle 61 and to stabilize the supply of the reaction gas to each wafer 14.

  Next, the bridge tool 88 used in this embodiment will be described.

  12 is a front view showing an example of the structure of a bridge tool installed in the hoop according to the embodiment of the present invention. FIG. 13 is an example of a state in which the wafer holder is housed in the hoop in which the bridge tool shown in FIG. 12 is installed. 14 is a plan view showing an example of the state of the structure shown in FIG. 13 when the lid is opened, and FIG. 15 is an example of the state of the structure shown in FIG. 14 when the lid is closed. FIG. 16 is a front view showing an example of a state in which the wafer holder is housed in a hoop in which the bridge tool shown in FIG. 12 is arranged eccentrically, and FIG. 17 shows an example of the state of the structure shown in FIG. It is a top view which permeate | transmits and shows.

  A bridge tool 88 shown in FIG. 12 is a conversion tool for making it possible to use the large-diameter wafer pod 16 as a storage container (transfer device) for the small-diameter wafer 14. A wafer 14 having a small diameter can be accommodated by being attached to the inside of 16. That is, it is a conversion tool for accommodating a plurality of types of semiconductor wafers having different diameters with one pod 16.

  The bridge tool 88 has a structure in which a bottom plate 88a and a top plate 88b, a column portion 88c that is arranged between the bottom plate 88a and the top plate 88b and joined to the both, a small-diameter wafer 14 and a wafer holder 100 are arranged in a predetermined manner. A plurality of wafer support portions (rail portions) 88d provided in the column portion 88c so as to be able to be stored in a plurality of stages at intervals, and a positioning column 88f serving as a positioning for preventing the wafer holder 100 from rotating in the horizontal direction. It has. The wafer support portion 88d is provided in a plurality of stages on the three pillar portions 88c at the left and right sides and the center back, and has a step shape 88g corresponding to the outer peripheral portion of the wafer 14 and the wafer holder 100.

  As shown in FIG. 13, the bridge tool 88 is installed on the two fixing rods 16 f in the pod (hoop) 16, and the top plate 88 b and the bottom plate 88 a each support a wafer for a large-diameter wafer of the pod 16. It is supported by the part 16b. FIG. 13 shows a case where the bridge tool 88 is installed at the center of the pod 16.

  14 is a view showing a state where the lid portion 16a of the pod 16 is opened, and FIG. 15 is a view showing a state where the lid portion 16a of the pod 16 is closed.

  As shown in FIG. 14, when the lid portion 16a is opened, the moving plate 16d supported by the first support bar 16c moves to the front side (moves along the direction P), and is further moved by the second support bar 16e. The retainer 16g supported and holding the wafer 14 and the wafer holder 100 moves along the Q direction and is separated from the wafer 14 and the wafer holder 100.

  On the other hand, as shown in FIG. 15, when the lid portion 16a of the pod 16 is closed, the moving plate 16d moves to the back side, so that the retainer 16g also comes into contact with the wafer 14 and the wafer holder 100, thereby causing the wafer 14 and the wafer holder 100 to move. In this state, the pod 16 is transported.

  16 and 17 show a case where the bridge tool 88 is installed eccentrically in the pod 16. For example, when the wafer 15 having a diameter larger than the wafer 14 or the wafer holder 100 (different diameter) is stored in the bridge tool 88 installed in the pod 16, the bridge tool 88 is installed eccentrically in the pod 16. Also in this case, when the lid portion 16a is closed, the wafer 15 is held by the retainer 16g.

  As described above, according to the technical idea described in the present embodiment, at least one of the effects described below can be realized.

  (1) The substrate holder holding the substrate is supported by the substrate transfer jig, and the substrate holder is installed in the transfer apparatus in a state where the substrate transfer jig is positioned between the transfer apparatus and the substrate is held. The substrate holder can be stored in the transfer device with high accuracy. That is, the substrate can be stored in the transfer device with high accuracy without the storage position of the substrate being varied among operators.

  (2) According to the above (1), the adhesion of particles to the substrate during substrate processing can be reduced, and the quality of the film can be improved when a film is formed on the substrate.

  (3) Since the operator can store the substrate in the transfer device through a substrate transfer jig instead of a direct manual operation, the operation time for storing the substrate can be shortened. it can.

  (4) Since the substrate is stored in a non-contact manner through the substrate transport jig without touching the substrate, the possibility of contact with other substrates can be reduced, and particles adhere to the substrate. Can be reduced.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

  For example, in the above-described embodiment, a bridge tool is installed in a pod (hoop), and a substrate holder holding a substrate (wafer) is stored in a wafer support portion of the bridge tool using a substrate transfer jig. As an example, the substrate transport jig has a substrate holder that holds a substrate (wafer) with respect to the original wafer support provided in the pod without installing a bridge tool in the pod. It may be used when storing. In other words, the maximum width of the base 91 of the substrate transfer jig is made to correspond to the distance between the wafer support portions provided in the pod, so that it can be applied even when the bridge tool is not used.

Finally, preferred main embodiments of the present invention are described below.
(1) A pedestal portion that supports a substrate holder that holds a substrate, a first positioning portion that positions an outer peripheral portion of the substrate holder, and a second positioning portion that positions in a rotational direction along the surface of the substrate holder And a third positioning portion that positions the rail portion that supports the substrate holder in the transfer apparatus capable of storing a plurality of substrates.
(2) A positioning unit that has a shape adapted to the outer peripheral shape of the substrate holder, is provided with a counterbore part and a top part that perform positioning with respect to the substrate holder, and is further brought into contact with a conversion tool in the transfer device. A substrate transport jig provided with
(3) A substrate transport jig having a plurality of pedestal portions capable of supporting the substrate holder in the height direction corresponding to the installation pitch of the substrate support portions of the conversion tool in the transport device.

  The present invention is suitable for a technique for transferring a substrate.

  DESCRIPTION OF SYMBOLS 10 ... Heat processing apparatus, 12 ... Housing | casing, 14 ... Wafer (substrate), 14a ... Lower surface, 14b ... Upper surface, 15 ... Wafer (substrate), 16 ... Pod (hoop), 16a ... Lid part, 16b ... Wafer support part, 16c ... 1st support bar, 16d ... Moving plate, 16e ... 2nd support bar, 16f ... Fixed bar, 16g ... Retainer, 18 ... Pod stage, 20 ... Pod conveyor, 22 ... Pod shelf, 24 ... Pod opener, 26 ... Number of substrates detector, 28 ... Substrate transfer device, 30 ... Boat, 31a ... First boat column, 31b ... Second boat column, 31c ... Third boat column, 32 ... Arm, 34 ... Lower heat insulating means, 35 ... Boat heat insulating part, 39 ... gas detector, 40 ... processing furnace, 42 ... reaction tube, 43 ... duct, 44 ... reaction chamber, 45 ... liner tube, 46 ... scavenger, 47 ... heater base, 48 ... heated object, DESCRIPTION OF SYMBOLS 9 ... Top opening nozzle, 50 ... Induction coil, 51 ... Support body, 54 ... Heat insulating material, 55 ... Water-cooled plate, 55a ... Water-cooled pulp, 58 ... Housing cover, 58a ... Heater chamber, 59 ... Inlet adapter, 60 ... No. 1 gas supply port, 61: first gas supply nozzle, 62: gas nozzle, 62a ... supply nozzle, 65 ... gas nozzle, 66 ... exhaust nozzle, 66a ... exhaust nozzle, 70a, 70b, 70c, 70d ... raw material tank, 72a, 72b 72c, 72d ... flow rate regulator, 74a, 74b, 74c, 74d ... valve, 76 ... exhaust pipe, 79 ... pressure regulating valve, 80 ... pump, 88 ... bridge tool, 88a ... bottom plate, 88b ... top plate, 88c ... Column, 88d ... Wafer support (rail), 88e ... End, 88f ... Positioning column, 88g ... Step shape, 90 ... Wafer transfer jig (substrate transfer jig) 91: Pedestal part, 91a ... Upper surface, 91b ... Counterbore surface, 91c, 91d, 91e ... Dropping part (first positioning part), 91f ... Projection part (second positioning part), 91g ... Notch part, 92 ... Positioning block (Third positioning portion), 92a ... projecting portion, 93 ... grip portion, 100 ... wafer holder (substrate holder), 102 ... seal body, 104 ... rotating shaft, 110 ... holder base, 110a ... through hole, 111 ... annular stepped portion 112 ... Main body part, 112a ... First communication hole, 112b ... Second communication hole, 112c ... Third communication hole, 112d ... Notch part, 113 ... Thin wall part, 120 ... Holder cover, 121 ... Large diameter main body part, DESCRIPTION OF SYMBOLS 122 ... Small diameter fitting part, 200 ... Wafer holder (substrate holder), 210 ... Holder base, 211 ... Punching hole, 212 ... Main part, 213 ... Thin part, 213a ... Arc hole , 300 ... SiC wafer, 310 ... gas supply unit, 320 ... supply port, 330 ... exhaust port, 340 ... susceptor, 350 ... reaction chamber, 360 ... induction coil, 370 ... wafer holder, 380 ... heat insulating material

Claims (1)

A substrate transfer jig used when storing the substrate held by a substrate holder in a transfer device capable of storing a plurality of substrates,
A pedestal for supporting the substrate holder;
A first positioning portion for positioning an outer peripheral portion of the substrate holder;
A second positioning portion for positioning in the rotational direction along the surface of the substrate holder;
A third positioning portion for positioning with respect to a rail portion that supports the substrate holder in the transfer device;
A substrate carrying jig characterized by comprising:

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