JP2013065773A - Semiconductor light-emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high efficiency.SOLUTION: A semiconductor light-emitting element includes a substrate, a stack, a first electrode, a second electrode, and a reflective layer. The substrate has a primary surface. The stack includes a first semiconductor layer, a light-emitting part, and a second semiconductor layer. The first semiconductor layer is provided on the primary surface, has a first portion and a second portion in juxtaposition with the first portion, and is a first conductivity type. The light-emitting part is provided on the second portion. The second semiconductor layer is provided on the light-emitting part and is a second conductivity type. The first electrode is provided on the first portion of the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers the side surfaces of the substrate and the side surfaces of the stack, and has reflectiveness to emission light emitted from the light-emitting part.

Description

  Embodiments described herein relate generally to a semiconductor light emitting device.

  For example, a semiconductor light emitting device such as an LED (Light Emitting Diode) using a nitride semiconductor has been developed. In addition, for example, a semiconductor light emitting element that emits white light by combining an LED that emits blue light and a phosphor that absorbs blue light and emits yellow light has been developed.

  In such a semiconductor light emitting device, it is desired to increase the light emission efficiency and increase the extraction efficiency of light emitted from the light emitting layer.

International Publication No. 2005 / 050748A1 Pamphlet

  Embodiments of the present invention provide a highly efficient semiconductor light emitting device.

  According to the embodiment of the present invention, a semiconductor light emitting device including a substrate, a stacked body, a first electrode, a second electrode, and a reflective layer is provided. The substrate has a main surface. The stacked body includes a first semiconductor layer, a light emitting unit, and a second semiconductor layer. The first semiconductor layer is provided on the main surface, has a first portion and a second portion juxtaposed with the first portion, and has a first conductivity type. The light emitting unit is provided on the second portion. The second semiconductor layer is provided on the light emitting unit and has a second conductivity type. The first electrode is provided on the first portion of the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers the side surface of the substrate and the side surface of the stacked body, and is reflective to the emitted light emitted from the light emitting unit.

1 is a schematic cross-sectional view illustrating the configuration of a semiconductor light emitting element according to a first embodiment. 1 is a schematic plan view illustrating the configuration of a semiconductor light emitting element according to a first embodiment. 1 is a schematic view illustrating the configuration of a part of a semiconductor light emitting element according to a first embodiment. 4A and 4B are schematic cross-sectional views illustrating the configuration of part of the semiconductor light emitting element according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment. FIG. 6A and FIG. 6B are schematic cross-sectional views illustrating the operation of the semiconductor light emitting element according to the first embodiment. FIG. 7A to FIG. 7C are schematic cross-sectional views showing the configuration of a semiconductor light emitting device of a reference example. FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment. FIG. 13A and FIG. 13B are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting element according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment. FIG. 6 is a schematic cross-sectional view illustrating the configuration of a semiconductor light emitting element according to a second embodiment. FIG. 6 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the second embodiment. FIG. 17A and FIG. 17B are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting element according to the second embodiment. FIG. 6 is a schematic cross-sectional view illustrating the configuration of a semiconductor light emitting element according to a third embodiment. FIG. 6 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the third embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic cross-sectional view illustrating the configuration of the semiconductor light emitting element according to the first embodiment. FIG. 2 is a schematic plan view illustrating the configuration of the semiconductor light emitting element according to the first embodiment. 1 is a cross-sectional view taken along line A1-A2 of FIG.

As illustrated in FIGS. 1 and 2, the semiconductor light emitting device 110 according to the present embodiment includes a substrate 5, a stacked body 15, a first electrode 40, a second electrode 50, and a reflective layer 60. .
The substrate 5 has a main surface 5a. The substrate 5 further has a substrate back surface 5b. The substrate back surface 5b is a surface opposite to the main surface 5a.

  The stacked body 15 includes a first semiconductor layer 10, a light emitting unit 30, and a second semiconductor layer 20. The first semiconductor layer 10 is provided on the main surface 5a. The first semiconductor layer 10 includes a first portion 11 and a second portion 12. The second portion 12 is juxtaposed with the first portion 11 in a plane parallel to the main surface 5a. The first semiconductor layer 10 is the first conductivity type.

  The light emitting unit 30 is provided on the second portion 12 of the first semiconductor layer 10. The second semiconductor layer 20 is provided on the light emitting unit 30. That is, the light emitting unit 30 is provided between the second portion 12 and the second semiconductor layer 20. The second semiconductor layer 20 is of the second conductivity type.

  The first electrode 40 is provided on the first portion 11 of the first semiconductor layer 10. The second electrode 50 is provided on the second semiconductor layer 20.

  The stacked body 15 has a first surface 15a and a second surface 15b. The second surface 15b is a surface on the opposite side to the first surface 15a. The first surface 15a is a surface of the stacked body 15 on the first semiconductor layer 10 side. The second surface 15b is a surface of the stacked body 15 on the second semiconductor layer 20 side.

  Here, a direction from the first semiconductor layer 10 toward the second semiconductor layer 20 is defined as a Z-axis direction (first direction). One axis perpendicular to the Z axis is defined as an X axis (second axis). An axis perpendicular to the Z axis and the X axis is taken as a Y axis (third axis). The Z axis (first axis) is perpendicular to the first surface 15a and perpendicular to the second surface 15b.

  The second conductivity type is a conductivity type different from the first conductivity type. For example, the first conductivity type is n-type and the second conductivity type is p-type. The embodiment is not limited to this, and the first conductivity type may be p-type and the second conductivity type may be n-type. In the following description, it is assumed that the first conductivity type is n-type and the second conductivity type is p-type.

  The first semiconductor layer 10, the second semiconductor layer 20, and the light emitting unit 30 include, for example, a nitride semiconductor. The first semiconductor layer 10 includes, for example, an n-type cladding layer. The second semiconductor layer 20 includes, for example, a p-type cladding layer. An example of the light emitting unit 30 will be described later.

  For example, the first semiconductor layer 10 is crystal-grown on the main surface 5 a of the substrate 5. The light emitting unit 30 is crystal-grown on the first semiconductor layer 10. The second semiconductor layer 20 is crystal-grown on the light emitting unit 30.

  That is, the first semiconductor layer 10, the light emitting unit 30, and the second semiconductor layer 20 are crystal-grown in this order on the substrate 5 to form a stacked crystal film that becomes the stacked body 15. A part of the stacked crystal film is removed from the second surface 15 b side until it reaches the first semiconductor layer 10. Thereby, a part (first portion 11) of the first semiconductor layer 10 is exposed. Then, the light emitting unit 30 and the second semiconductor layer 20 on the second portion 12 remain. Thereby, the laminated body 15 is formed. The second portion 12 is juxtaposed with the first portion 11 in the XY plane.

  The first electrode 40 is provided on the surface on the second surface 15 b side of the first portion 11 of the first semiconductor layer 10. That is, the first electrode 40 is provided on the exposed part (part of the first semiconductor layer 10).

  The second electrode 50 is provided on the surface of the second semiconductor layer 20 on the second surface 15b side. In this example, the second electrode 50 includes a p-side electrode 51 and a p-side conductive layer 52. The p-side conductive layer 52 is provided on the surface of the second semiconductor layer 20 on the second surface 15b side. A part of the p-side conductive layer 52 is provided between the p-side electrode 51 and the second semiconductor layer 20.

  However, the embodiment is not limited to this, and the p-side conductive layer 52 may not be provided in the second electrode 50. In this case, the p-side electrode 51 is in contact with the second semiconductor layer 20.

The reflective layer 60 covers the side surface 15 s of the stacked body 15.
The side surface 15s of the stacked body 15 includes an outer edge side surface 15r and a boundary side surface 15t. The outer edge side surface 15r is a side surface of the outer edge of the stacked body 15 when the stacked body 15 is viewed in the Z-axis direction. The boundary side surface 15 t is a side surface located between the first portion 11 and the second portion 12 in the stacked body 15.

  In the semiconductor light emitting device 110 according to the present embodiment, the reflective layer 60 covers the side surface 5s of the substrate 5 and the side surface 15s (the outer edge side surface 15r and the boundary side surface 15t) of the stacked body 15. The reflective layer 60 is reflective to the emitted light emitted from the light emitting unit 30. The reflective layer 60 is, for example, electrically insulating.

  In the embodiment, the emitted light emitted from the light emitting unit 30 is efficiently reflected by the reflective layer 60 and efficiently emitted to the outside from the substrate back surface 5b. That is, the light extraction efficiency can be improved. Thereby, high efficiency is obtained.

  In this example, the semiconductor light emitting device 110 further includes a base insulating layer 70. At least a part of the base insulating layer 70 is provided between the side surface 15 s of the stacked body 15 and the reflective layer 60. The base insulating layer 70 may be further provided between the side surface 5 s of the substrate 5 and the reflective layer 60. For example, the base insulating layer 70 is transmissive to emitted light. For example, the reflectance of the base insulating layer 70 with respect to the emitted light is lower than the reflectance of the reflective layer 60 with respect to the emitted light. The base insulating layer 70 is insulative. The base insulating layer 70 is provided as necessary, and may be omitted in some cases.

  As illustrated in FIG. 2, the length l4 along the X axis of the semiconductor light emitting device 110 is, for example, about 623 micrometers (μm). The length along the Y axis of the semiconductor light emitting device 110 is, for example, the same as the length l4. However, the embodiment is not limited thereto, and the size of the semiconductor light emitting device 110 is arbitrary.

  In the semiconductor light emitting device 110, the first electrode 40 and the second electrode 50 are provided on the second surface 15b side, and the emitted light is emitted from the first surface 15a. The semiconductor light emitting device 110 is, for example, a flip chip type semiconductor light emitting device.

  In this example, the second electrode 50 includes three p-side electrodes 51 (p-side electrodes 51a, 51b and 51c) and one p-side conductive layer 52. The p-side electrodes 51a, 51b and 51c are electrically connected to the p-side conductive layer 52.

  In this example, the outer edge of the stacked body 15 when viewed in the Z-axis direction is a rectangle (for example, a square). The outer edge side surface 15r of the side surface 15s of the laminated body 15 is a side surface of the rectangular outer edge. The boundary side surface 15t among the side surfaces 15s of the stacked body 15 is a side surface located between the first electrode 40 and the second electrode 50 when viewed in the Z-axis direction, for example.

  The reflective layer 60 covers at least a part of the outer edge side surface 15r and at least a part of the boundary side surface 15t.

  The base insulating layer 70 is provided between at least a part of the outer side surface 15 r and the reflective layer 60. Furthermore, the base insulating layer 70 is provided between at least a part of the boundary side surface 15 t and the reflective layer 60.

  In this example, the base insulating layer 70 covers all of the boundary side surface 15t. Thereby, in the laminated body 15, the insulation of the part between the 1st electrode 40 and the 2nd electrode 50 with especially high current density improves, for example, can improve especially reliability.

  In this example, the length l3 along the X axis of the substrate 5 is, for example, about 620 μm. The length of the substrate 5 along the Y axis is, for example, the same as the length l3.

  In this example, the length 12 along the X axis of the stacked body 15 is, for example, about 580 μm. The length along the Y axis of the stacked body 15 is, for example, the same as the length l2. In this example, the size of the substrate 5 is different from the size of the stacked body 15. However, as described later, the size of the substrate 5 may be the same as the size of the stacked body 15.

  A distance l1 between the center along the X axis of the first electrode 40 and the center along the X axis of the p-side electrode 51a is, for example, about 380 μm. The distance between the center along the Y axis of the first electrode 40 and the center along the Y axis of the p-side electrode 51c is, for example, the same as the distance l1.

  In this example, the first portion 11 is provided at one corner of the stacked body 15 when viewed in the Z-axis direction. At the side connected to this corner, the distance d1 between the outer edge of the second semiconductor layer 20 and the outer edge of the first semiconductor layer 10 is, for example, about 25 μm. A distance d2 between the center along the Y axis of the first electrode 40 and the outer edge along the Y axis direction of the first semiconductor layer 10 is, for example, about 100 μm. The length d3 along the Y-axis direction of the first portion 11 is, for example, about 200 μm. The length along the X-axis direction of the first portion 11 is, for example, the same as the length d3.

  In this example, the p-side electrode 51 has a circular shape when viewed in the Z-axis direction. The diameter d4 (the length along the X-axis direction and the length along the Y-axis direction) of the p-side electrode 51 when viewed in the Z-axis direction is, for example, 100 μm. The diameter d5 (the length along the X-axis direction and the length along the Y-axis direction) of the opening of the base insulating layer 70 provided on the p-side electrode 51 when viewed in the Z-axis direction. ) Is, for example, 90 μm. The diameter d6 (length along the X-axis direction and length along the Y-axis direction) of the opening of the reflective layer 60 provided on the p-side electrode 51 when viewed in the Z-axis direction. Is, for example, 80 μm.

  In the embodiment, the shape of the p-side electrode 51 as viewed in the Z-axis direction, the shape of the opening of the base insulating layer 70 on the p-side electrode 51 as viewed in the Z-axis direction, and the p-side electrode The shape of the opening of the reflective layer 60 on 51 when viewed in the Z-axis direction is arbitrary.

  Further, the shape of the first electrode 40 when viewed in the Z-axis direction is a circle. The diameter of the first electrode 40 when viewed in the Z-axis direction is the same as the diameter d4. In addition, the diameter of the opening of the base insulating layer 70 provided on the first electrode 40 when viewed in the Z-axis direction is the same as the diameter d5. The diameter of the opening of the reflective layer 60 provided on the first electrode 40 when viewed in the Z-axis direction is the same as the diameter d6.

  In the embodiment, the shape of the first electrode 40 when viewed in the Z-axis direction, the shape of the opening of the base insulating layer 70 on the first electrode 40 when viewed in the Z-axis direction, and the first electrode The shape of the opening of the reflective layer 60 on 40 when viewed in the Z-axis direction is arbitrary.

  The base insulating layer 70 covers a part of the first electrode 40 and a part of the second electrode 50.

  In this specific example, the reflective layer 60 covers the edge and side surfaces of the first electrode 40 and covers the edge and side surfaces of the second electrode 50.

  In the semiconductor light emitting device 110 according to the present embodiment, part of the emitted light emitted from the light emitting unit 30 is emitted to the outside from the substrate back surface 5b. Then, another part of the emitted light is reflected by, for example, the first electrode 40 and the second electrode 50, changes the traveling direction, and is emitted from the substrate back surface 5b. Further, another part of the emitted light is reflected by the reflective layer 60 provided on the side surface 5s of the substrate 5 and the side surface 15s (the outer edge side surface 15r and the boundary side surface 15t) of the stacked body 15, and the traveling direction is changed to change the back surface of the substrate. The light is emitted from 5b.

  That is, in the semiconductor light emitting device 110, the emitted light emitted from the light emitting unit 30 is emitted from the substrate back surface 5b. Thus, emission from other surfaces is suppressed, and light extraction efficiency is high. Thereby, high efficiency is obtained. That is, the emitted light is not substantially emitted to the outside from the side surface 5s of the substrate 5 or the side surface 15s (the outer edge side surface 15r and the boundary side surface 15t) of the stacked body 15.

  For example, the reflective layer 60 covers the entire side surface 5 s of the substrate 5. The reflective layer 60 covers the entire laminate 15 except for the opening on the first electrode 40 for electrical connection and the opening on the second electrode 50 for electrical connection. Specifically, the outer edges of the p-side electrode 51 of the second electrode 50 and the first electrode 40 are covered with the base insulating layer 70. The upper surface and side surfaces of the base insulating layer 70 are further covered with the reflective layer 60. Thereby, in the semiconductor light emitting device 110, light is emitted only from the substrate back surface 5b. Thereby, high light extraction efficiency is obtained.

  Note that the p-side conductive layer 52 has a function of expanding the current flowing between the first semiconductor layer 10 and the second semiconductor layer 20 more than the area of the p-side electrode 51. Thereby, an electric current can be sent through the wide area | region of the laminated body 15, and luminous efficiency can be improved. The p-side conductive layer 52 can be reflective or transmissive with respect to the emitted light emitted from the light emitting unit 30.

  When a light reflective conductive layer is used as the p-side conductive layer 52, for example, the reflectance of the p-side conductive layer 52 is higher than the reflectance of the p-side electrode 51. At this time, part of the emitted light is reflected by the p-side conductive layer 52 and travels toward the substrate back surface 5b. Thereby, high light extraction efficiency is obtained.

  When a light-transmitting conductive layer is used as the p-side conductive layer 52, for example, the transmittance of the p-side conductive layer 52 is higher than the transmittance of the p-side electrode 51. Further, the transmittance of the p-side conductive layer 52 is higher than the transmittance of the reflective layer 60, for example. At this time, part of the emitted light passes through the p-side conductive layer 52, is reflected by the reflective layer 60, and travels toward the substrate back surface 5b. Thereby, high light extraction efficiency is obtained.

  The thickness of the first semiconductor layer 10 is, for example, not less than 1 μm and not more than 10 μm. In this specific example, the thickness of the first semiconductor layer 10 is about 5 μm. The thickness of the light emitting unit 30 is, for example, 5 nanometers (nm) or more and 100 nm or less. In this specific example, the thickness of the light emitting unit 30 is about 10 nm. The thickness of the second semiconductor layer 20 is, for example, not less than 5 nm and not more than 300 nm. In this specific example, the thickness of the second semiconductor layer 20 is about 100 nm.

  As illustrated in FIG. 1, in this specific example, the thickness of the outer edge portion of the first semiconductor layer 10 is thinner than the thickness of the central portion (for example, the second portion 12). That is, the first semiconductor layer 10 further includes a third portion 13 juxtaposed with the second portion 12. The second portion 12 has a portion between the first portion 11 and the third portion 13. The thickness along the Z-axis direction of the first portion 11 and the thickness along the Z-axis direction of the third portion 13 are thinner than the thickness along the Z-axis direction of the second portion 12. As will be described later, the third portion 13 is provided as necessary and may be omitted.

FIG. 3 is a schematic view illustrating the configuration of a part of the semiconductor light emitting element according to the first embodiment. That is, the drawing shows an example of the configuration of the light emitting unit 30.
As illustrated in FIG. 3, the light emitting unit 30 includes a plurality of well layers 32 and a barrier layer 31 provided between the plurality of well layers 32. That is, the plurality of well layers 32 and the plurality of barrier layers 31 are alternately stacked along the Z axis.

  The well layer 32 has a band gap energy smaller than the band gap energy of the plurality of barrier layers 31. For example, holes and electrons are recombined in the well layer 32. Thereby, light is emitted from the light emitting unit 30.

The well layer 32 includes, for example, In _x1 Ga _1-x1 N (0 <x1 <1). The barrier layer 31 includes, for example, GaN. That is, the barrier layer 31 does not substantially contain In. Further, when the barrier layer 31 contains In, the In composition ratio in the barrier layer 31 is lower than the In composition ratio in the well layer 32.

  The light emitting unit 30 may have a multiple quantum well (MQW) configuration. At this time, the light emitting unit 30 includes three or more barrier layers 31 and a well layer 32 provided between the barrier layers 31.

  The light emitting unit 30 includes, for example, (n + 1) barrier layers 31 and n well layers 32 (n is an integer of 2 or more). The first barrier layer BL1 to the (n + 1) th barrier layer BL (n + 1) are arranged in this order from the first semiconductor layer 10 to the second semiconductor layer 20. The i-th well layer WLi (i is an integer of 1 to n) is provided between the i-th barrier layer BLi and the (i + 1) -th barrier layer BL (i + 1).

  The peak wavelength of light (emitted light) emitted from the light emitting unit 30 is, for example, not less than 350 nm and not more than 700 nm.

The light emitting unit 30 can have a single quantum well (SQW) configuration. At this time, the light emitting unit 30 includes two barrier layers 31 and a well layer 32 provided between the barrier layers 31.
In the embodiment, the configuration of the light emitting unit 30 is arbitrary.

4A and 4B are schematic cross-sectional views illustrating the configuration of part of the semiconductor light emitting element according to the first embodiment.
That is, these drawings show two examples of the configuration of the reflective layer 60.

  As shown in FIG. 4A, a multilayer dielectric film 61 (for example, DBR: Distributed Bragg Reflector) can be used as the reflective layer 60. In other words, the reflective layer 60 may include a plurality of first dielectric layers 61a and a plurality of second dielectric layers 61b that are alternately stacked and have different refractive indexes. When the refractive index of the first dielectric layer 61a is n1, and the wavelength (for example, peak wavelength) of emitted light emitted from the light emitting unit 30 is λ, for example, the thickness t61a of the first dielectric layer 61a is substantially Λ / (4n1). Further, when the refractive index of the second dielectric layer 61b is n2, for example, the thickness t61b of the second dielectric layer 61b is substantially set to λ / (4n2). Thereby, emitted light can be reflected efficiently. Thereby, the emitted light can be efficiently emitted from the first surface 15a to the outside.

  For example, silicon oxide is used for the first dielectric layer 61a, and for example, silicon nitride is used for the second dielectric layer 61b. However, the embodiment is not limited thereto, and any insulating material can be used for the first dielectric layer 61a and the second dielectric layer 61b.

  The number of each of the first dielectric layer 61a and the second dielectric layer 61b is two or more, and the number is arbitrary. For example, sputtering or CVD (Chemical Vapor Deposition) is used to form the first dielectric layer 61a and the second dielectric layer 61b.

Further, as illustrated in FIG. 4B, a reflective insulating film 62 can be used as the reflective layer 60. For example, the reflective layer 60 (the reflective insulating film 62) includes zinc oxide (ZnO), titanium dioxide (TiO ₂ ), zirconia oxide (ZrO ₂ ), aluminum oxide (Al ₂ O ₃ ), magnesium oxide (MgO), titanic acid. It can contain at least one selected from the group consisting of calcium (CaTiO ₂ ), barium sulfate (BaSO ₄ ), zinc sulfide (ZnS), and calcium carbonate (CaCO ₃ ). These materials reflect emitted light and are electrically insulating. A material that is substantially white can be used for the reflective layer 60. For the reflective layer 60, any insulating material (for example, a metal oxide and a compound containing a metal) having a high reflectance with respect to emitted light can be used, and the reflective layer 60 is not necessarily white.

  For example, sputtering, vapor deposition, or CVD is used to form the reflective insulating film 62.

  However, in the embodiment, the formation method of the reflective layer 60 (the first dielectric layer 61a and the second dielectric layer 61b or the reflective insulating film 62) is arbitrary.

  The thickness of the reflective layer 60 is, for example, not less than 10 nm and not more than 10,000 nm. The thickness of the reflective layer 60 is appropriately set from the viewpoints of optical characteristics (for example, reflectance), electrical characteristics (for example, insulation), and productivity.

When the reflective insulating film 62 of TiO ₂ film is used as the reflective layer 60, the thickness of the reflective layer 60 is set to about 1000 nm, for example.

The base insulating layer 70 can include at least one of silicon oxide and silicon nitride. For example, the base insulating layer 70 can be made of an inorganic material such as SiO ₂ , SiN, phosphorus silicate glass (PSG), and boron phosphorus silicate glass (BPSG). The base insulating layer 70 is formed by, for example, CVD. In this case, the thickness of the base insulating layer 70 is, for example, not less than 10 nm and not more than 10,000 nm. Specifically, the thickness of the base insulating layer 70 is about 400 nm. For forming the base insulating layer 70, vapor deposition or sputtering may be used in addition to CVD.

  Further, a glass material such as organic SOG (Spin on Glass) or inorganic SOG may be used as the base insulating layer 70. As the organic SOG film, for example, a methylsilsesquioxane film can be used. A hydrogenated silsesquioxane film can be used as the inorganic SOG film. As the inorganic SOG film, for example, a film in which an alcohol solution of silanol is applied and heat-treated can be used.

  Further, as the base insulating layer 70, a low dielectric constant interlayer insulating film (Low-k film) or the like can be used. Further, as the base insulating layer 70, a resin material such as polyimide, polybenzoxazole (PBO), and a silicone material may be used. In this case, the thickness of the base insulating layer 70 is set to 1000 nm or more and 20000 nm or less, for example.

  The reflectance of the base insulating layer 70 with respect to the emitted light is lower than the reflectance of the reflective layer 60 with respect to the emitted light, and a light-transmitting material can be used for the base insulating layer 70, for example.

  Any conductive material can be used for the p-side conductive layer 52. The p-side conductive layer 52 can function as a contact electrode for the second semiconductor layer 20.

  As the p-side conductive layer 52, for example, a film containing at least one of Ni, Au, Ag, Al, and Pd can be used. As the p-side conductive layer 52, a laminated film including at least two selected from a Ni film, an Au film, an Ag film, an Al film, and a Pd film can be used.

  In particular, as the p-side conductive layer 52, any of an Ag film, an Al film, and a Pd film, or a stacked film including at least two of an Ag film, an Al film, and a Pd film can be used. Thereby, in particular, a high reflectance for short wavelength light (ultraviolet light to blue light) can be obtained. Thereby, high light extraction efficiency can be obtained.

Further, a translucent metal oxide can be used for the p-side conductive layer 52. For example, at least one of ITO (Indium Tin Oxide), SnO ₂ , In ₂ O _3, and ZnO can be used as the p-side conductive layer 52.

  For example, sputtering and vapor deposition can be used to form the p-side conductive layer 52. When the p-side conductive layer 52 is a single layer, the thickness of the p-side conductive layer 52 is, for example, 0.2 μm.

  For the p-side electrode 51 and the first electrode 40, for example, a laminated film of a Ni film and an Au film can be used. At this time, the thickness of the Ni film is about 100 nm, for example, and the thickness of the Au film is about 100 nm, for example. Alternatively, for the p-side electrode 51 and the first electrode 40, for example, a laminated film of a Ti film, a Ni film, and an Au film can be used. At this time, the thickness of the Ti film is, for example, 50 nm, the thickness of the Ni film is, for example, about 100 nm, and the thickness of the Au film is, for example, about 100 nm.

  The material, thickness, and configuration of the p-side electrode 51 are preferably the same as the material, thickness, and configuration of the first electrode 40. For example, sputtering and vapor deposition can be used to form the p-side electrode 51 and the first electrode 40.

An example of a method for manufacturing the semiconductor light emitting device 110 will be briefly described.
For example, a stacked crystal film of the first semiconductor layer 10, the light emitting unit 30, and the second semiconductor layer 20 is sequentially epitaxially grown on the substrate 5. The stacked crystal film becomes the stacked body 15.

For example, sapphire (Al ₂ O ₃ ), silicon carbide (SiC), spinel (MgAl ₂ O ₄ ), silicon (Si), or the like can be used for the substrate 5. For example, the substrate 5 may be made of substantially the same material as the stacked body 15. For the substrate 5, for example, a material having a lattice constant and a thermal expansion coefficient close to those of the laminate 15 is preferably used. However, in the embodiment, any material can be used for the substrate 5. The thickness of the substrate 5 is, for example, 30 μm or more and 5000 μm or less.

  The epitaxial growth of the stacked crystal film on the substrate 5 includes, for example, metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam. An epitaxy method (MBE: Molecular Beam Epitaxy) or the like can be used. If necessary, a buffer layer (not shown) may be formed on the substrate 5, and a laminated crystal film may be epitaxially grown on the buffer layer.

  Further, after the growth of the stacked crystal film, a part of the stacked crystal film is removed. Thereby, the some laminated body 15 is formed. Further, the second electrode 50 (p-side conductive layer 52 and p-side electrode 51) is formed on the second semiconductor layer 20, and the first electrode 40 is formed on the first semiconductor layer 10.

  Further, the base insulating layer 70 is formed on the side surfaces (outer edge side surface 15r and boundary side surface 15t) of the stacked body 15. The base insulating layer 70 is provided with an opening exposing a part of the first electrode 40 and an opening exposing a part of the second electrode 50.

  Thereafter, the first semiconductor layer 10 is divided to obtain a plurality of stacked bodies 15. Further, the substrate 5 is divided. Further, the reflective layer 60 is formed on the side surface 5 s of the substrate 5 and the base insulating layer 70. The reflective layer 60 covers the side surface 5s of the substrate 5 and covers the side surface 15s (the outer edge side surface 15r and the boundary side surface 15t) of the stacked body 15.

FIG. 5 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 5, the semiconductor light emitting device 110 a according to the present embodiment further includes a wavelength conversion layer 90. Other than this, it is the same as the semiconductor light emitting device 110, and the description is omitted.

  The substrate 5 is disposed between the wavelength conversion layer 90 and the stacked body 15. The wavelength conversion layer 90 absorbs part of the emitted light and emits light having a wavelength different from the wavelength of the emitted light. For example, for the wavelength conversion layer 90, for example, a phosphor layer can be used. The phosphor layer includes a phosphor. For example, the phosphor layer includes a phosphor and a translucent material in which the phosphor is dispersed. For the translucent material, for example, resin, glass, and other arbitrary materials can be used. The phosphor layer may include a plurality of phosphors that emit light having different wavelengths. As the wavelength conversion layer 90, a laminated film of a plurality of phosphor layers that emit light having different wavelengths may be used. For example, the light emitted from the light emitting unit 30 is ultraviolet light, violet light, or blue light, and the light emitted from the wavelength conversion layer 90 is yellow light or red light. The combined light of the light (converted light) emitted from the wavelength conversion layer 90 and the emitted light is, for example, substantially white light.

  In this example, the wavelength conversion layer 90 covers the entire substrate back surface 5b. The embodiment is not limited thereto, and a part of the substrate back surface 5b may not be covered with the wavelength conversion layer 90.

  In this example, the size (width) parallel to the XY plane of the wavelength conversion layer 90 is larger than the size (width) parallel to the XY plane of the substrate 5. The wavelength conversion layer 90 has an outer portion (peripheral portion) of the substrate 5. The reflective layer 60 may be further provided on the peripheral portion of the wavelength conversion layer 90 (the surface on the substrate 5 side of the peripheral portion of the wavelength conversion layer 90). The embodiment is not limited to this, and the reflective layer 60 may not be in contact with the wavelength conversion layer 90. Furthermore, in the embodiment, the size of the wavelength conversion layer 90 may be equal to or smaller than the size of the substrate 5.

FIG. 6A and FIG. 6B are schematic cross-sectional views illustrating the operation of the semiconductor light emitting element according to the first embodiment.
As illustrated in FIG. 6A, the semiconductor light emitting element 110 a is mounted on the mounting component 95. That is, the light emitting device 510 includes the semiconductor light emitting element 110a and the mounting component 95. The mounting component 95 includes a base 96, an n-side wiring 46e, a p-side wiring 56e, and an insulating layer 97. An n-side wiring 46e and a p-side wiring 56e are provided on the base 96. The insulating layer 97 exposes a part of the n-side wiring 46e and is provided on the n-side wiring 46e. The insulating layer 97 exposes a part of the p-side wiring 56e and is provided on the p-side wiring 56e. A portion of the n-side wiring 46e exposed from the insulating layer 97 faces the first electrode 40 of the semiconductor light emitting device 110a. A portion of the p-side wiring 56 e exposed from the insulating layer 97 faces the second electrode 50. An n-side connection member 47 b is provided between the n-side wiring 46 e and the first electrode 40. A p-side connection member 57 b is provided between the p-side wiring 56 e and the second electrode 50.

  As shown in FIG. 6B, the emitted light L <b> 1 emitted from the light emitting unit 30 (not shown in the drawing) of the stacked body 15 is emitted from the substrate back surface 5 b of the substrate 5. A part of the emitted light L1 is converted into the converted light L2 after the wavelength is converted.

  At this time, the ratio of the emitted light L1 and the converted light L2 is substantially the same on the Z axis and in the direction inclined from the Z axis. That is, in the semiconductor light emitting device 110a and the light emitting device 510 according to the present embodiment, uniform color light can be obtained regardless of the emission angle.

  In this example, the wavelength conversion layer 90 is provided in the semiconductor light emitting device 110a, but the embodiment is not limited thereto. After the semiconductor light emitting device 110 is mounted on the mounting component 95, the wavelength conversion layer 90 may be formed on at least a part of the first surface 15a of the semiconductor light emitting device 110.

FIG. 7A to FIG. 7C are schematic cross-sectional views showing the configuration of a semiconductor light emitting device of a reference example.
As shown in FIG. 7A, in the semiconductor light emitting device 119a of the first reference example, the reflective layer 60 covers the side surface 15s of the stacked body 15, but does not cover the side surface 5s of the substrate 5.

  As shown in FIG. 7B, in the semiconductor light emitting device 119 b of the second reference example, a reflective film 53 is provided between the p-side conductive layer 52 and the p-side electrode 51. The reflective layer 60 covers the side surface 5s of the substrate 5 and the outer edge side surface 15r of the stacked body 15, but does not cover the boundary side surface 15t.

  As shown in FIG. 7C, in the semiconductor light emitting device 119 c of the third reference example, a reflective film 53 is provided between the p-side conductive layer 52 and the p-side electrode 51. In this example, the reflective layer 60 is provided between the insulating layer 71 and the stacked body 15. The reflective layer 60 covers the side surface 5s of the substrate 5 and the outer edge side surface 15r of the stacked body 15, but does not cover the boundary side surface 15t.

  Thus, in the semiconductor light emitting devices 119a to 119c of the first to third reference examples, the reflective layer 60 includes the side surface 5s of the substrate 5, the side surface 15s of the stacked body 15 (the outer edge side surface 15r and the boundary side surface 15t), Does not cover both. For this reason, the emitted light emitted from the light emitting unit 30 is emitted to the outside from the side surface 5s and the boundary side surface 15t of the substrate 5. The light emitted to the outside is absorbed and lost by a mounting component disposed around the semiconductor light emitting element. Therefore, in these reference examples, the efficiency is low.

  Further, when a phosphor layer is provided around the semiconductor light emitting devices of these reference examples, the emitted light is emitted from the substrate back surface 5 b and also from the side surface 5 s of the substrate 5 and the boundary side surface 15 t of the laminate 15. . At this time, in these reference examples, the ratio of the emitted light L1 and the converted light L2 is different between the direction along the Z axis and the direction inclined with respect to the Z axis. That is, the optical path length of the emitted light L1 propagating in the phosphor resin in the direction inclined with respect to the Z axis is longer than the optical path length of the emitted light L1 propagating in the phosphor resin in the direction along the Z axis. . For this reason, the ratio of the converted light L2 in the direction inclined with respect to the Z axis is higher than the ratio of the converted light L2 in the direction along the Z axis. For this reason, the wavelength characteristics of the emitted light (the emitted light L1, the converted light L2, and the combined light) differ between the direction along the Z axis and the direction inclined with respect to the Z axis.

  For example, the emitted light L1 is blue, and the converted light L2 is yellow. In the first reference example, light emitted in an oblique direction has a higher yellow intensity than the front direction (a direction parallel to the Z axis). For example, when white light is obtained in the front direction, the color becomes yellowish in the oblique direction. For this reason, light of the same color cannot be obtained in all directions. That is, in the semiconductor light emitting element of the reference example and the light emitting device using the semiconductor light emitting element, the color of the emitted light changes depending on the angle. That is, the color unevenness of the emitted light is large.

  On the other hand, in the semiconductor light emitting device 110a and the light emitting device 510 according to the present embodiment, light is emitted substantially only from the substrate back surface 5b, and therefore the ratio of the emitted light L1 and the converted light L2 is Z axis. The above is substantially the same in the direction inclined from the Z axis. Thereby, light of a uniform color can be obtained regardless of the emission angle.

  That is, in the embodiment, light is not substantially emitted from the surface other than the substrate back surface 5b, so that light loss is suppressed. Thereby, high light extraction efficiency is obtained. Furthermore, uniform color light can be obtained.

FIG. 8 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 8, in the semiconductor light emitting device 110b according to this embodiment, the side surface 15s of the stacked body 15 is inclined with respect to the Z axis. That is, the side surface 15s of the stacked body 15 is a tapered surface. For example, the width of the second semiconductor layer 20 along the X-axis direction (second direction perpendicular to the first direction) is larger than the width of the light emitting unit 30 along the X-axis direction. Is also inclined with respect to the Z-axis direction so as to be shorter. That is, the side surface 15s of the stacked body 15 has a forward tapered portion.

  By covering the side surface 15s of the stacked body 15 (inclining with a forward taper), the coverage on the side surface 15s of the base insulating layer 70 and the reflective layer 60 is improved. Thereby, the protection characteristic of the base insulating layer 70 is easily improved, and the reflection characteristic of the reflective layer 60 is easily improved.

  The taper angle θ (the angle between the side surface 15s and the first surface 15a) of the side surface 15s of the stacked body 15 is, for example, not less than 45 degrees and less than 90 degrees.

  In this example, the outer side surface 15r of the stacked body 15 is inclined with respect to the Z-axis direction, but the boundary side surface 15t of the stacked body 15 may be inclined with respect to the Z-axis direction. For example, all or part of the boundary side surface 15s may have a forward tapered inclined surface. Furthermore, the side surface 5s of the substrate 5 may be inclined with respect to the Z-axis direction. For example, all or part of the side surface 5s of the substrate 5 may have a forward tapered inclined surface.

FIG. 9 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 9, the semiconductor light emitting device 110 c according to the present embodiment further includes a light transmission layer 91. The substrate 5 is disposed between the light transmission layer 91 and the stacked body 15. That is, the light transmission layer 91 is provided on the substrate back surface 5b. The light transmission layer 91 is transmissive to the emitted light.

  The light transmission layer 91 protects the substrate back surface 5b of the substrate 5, for example. Further, a material having a refractive index lower than that of the substrate 5 can be used for the light transmission layer 91. Thereby, the light emitted from the light emitting unit 30 can be efficiently emitted from the substrate back surface 5b. Thereby, a further highly efficient semiconductor light emitting element can be provided.

FIG. 10 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 10, in another semiconductor light emitting device 111 according to the present embodiment, the base insulating layer 70 is a portion of the outer edge of the first semiconductor layer 10 (for example, the first portion 11 and the third portion 13). The side surface and the entire side surface 5s of the substrate 5 are covered. Thereby, more stable characteristics can be obtained.

FIG. 11 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 11, in the semiconductor light emitting device 112 according to the present embodiment, the base insulating layer 70 has the side surfaces of the outer edge portions (for example, the first portion 11 and the third portion 13) of the first semiconductor layer 10. Covering.

FIG. 12 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 12, in the semiconductor light emitting device 113 according to the present embodiment, the base insulating layer 70 includes the side surfaces of the outer edge portions (for example, the first portion 11 and the third portion 13) of the first semiconductor layer 10. The main surface 5a of the substrate 5 is covered.

FIG. 13A and FIG. 13B are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIGS. 13A and 13B, in another semiconductor light emitting device 114 and 115 according to this embodiment, a reflective film 53 is interposed between the p-side conductive layer 52 and the p-side electrode 51. Is provided. In the semiconductor light emitting device 114, the base insulating layer 70 does not extend between the reflective layer 60 and the substrate 5. In the semiconductor light emitting device 115, the base insulating layer 70 extends between the reflective layer 60 and the substrate 5, and the base insulating layer 70 is a portion of the outer edge of the first semiconductor layer 10 (for example, the first portion 11). And the side surface of the third portion 13) and the entire side surface 5s of the substrate 5 are covered. Thereby, more stable characteristics can be obtained.

FIG. 14 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the first embodiment.
As shown in FIG. 14, the third portion 13 is not provided in another semiconductor light emitting device 116 according to this embodiment. Other than this, it is the same as the semiconductor light emitting device 110, and the description is omitted. Also in the semiconductor light emitting device 116, the reflective layer 60 covers the side surface 5s of the substrate 5 and the side surface 15s (the outer edge side surface 15r and the boundary side surface 15t) of the stacked body 15. Thereby, high efficiency is obtained. Even in the configuration in which the third portion 13 is not provided, the base insulating layer 70 can have various configurations as described with reference to FIGS. 10 to 12, 13 (a), and 13 (b).

(Second Embodiment)
FIG. 15 is a schematic cross-sectional view illustrating the configuration of the semiconductor light emitting element according to the second embodiment.
As shown in FIG. 15, in the semiconductor light emitting device 120 according to this embodiment, the size of the substrate 5 is the same as the size of the first semiconductor layer 10. Other configurations of the semiconductor light emitting device 120 are the same as those of the semiconductor light emitting device 110. Also in this case, the reflective layer 60 covers the side surface 5s of the substrate 5 and the side surface 15s (the outer edge side surface 15r and the boundary side surface 15t) of the stacked body 15. Also in the semiconductor light emitting device 120, a highly efficient semiconductor light emitting device can be provided.

FIG. 16 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the second embodiment.
As shown in FIG. 16, in the semiconductor light emitting device 121 according to the present embodiment, the base insulating layer 70 is a side surface of the outer edge portion of the first semiconductor layer 10 (for example, the first portion 11 and the third portion 13). And the whole side surface 5s of the substrate 5 is covered.

FIG. 17A and FIG. 17B are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting element according to the second embodiment.
As shown in FIGS. 17A and 17B, in the semiconductor light emitting devices 122 and 123 according to this embodiment, a reflective film 53 is provided between the p-side conductive layer 52 and the p-side electrode 51. It has been. In the semiconductor light emitting device 122, the base insulating layer 70 does not extend between the reflective layer 60 and the substrate 5. In the semiconductor light emitting device 123, the base insulating layer 70 covers the side surface of the outer edge portion (for example, the first portion 11 and the third portion 13) of the first semiconductor layer 10 and the entire side surface 5 s of the substrate 5. . Thereby, more stable characteristics can be obtained.

  Also in the semiconductor light emitting devices 121 to 123, the reflective layer 60 covers the side surface 5s of the substrate 5 and the side surface 15s (the outer edge side surface 15r and the boundary side surface 15t) of the stacked body 15. Also in these semiconductor light emitting elements, a highly efficient semiconductor light emitting element can be provided.

  Also in the second embodiment, the base insulating layer 70 is provided as necessary, and may be omitted in some cases.

(Third embodiment)
FIG. 18 is a schematic cross-sectional view illustrating the configuration of the semiconductor light emitting element according to the third embodiment.
As shown in FIG. 18, the semiconductor light emitting device 130 according to this embodiment further includes a coating layer 75. The covering layer 75 covers the reflective layer 60. The semiconductor light emitting element 130 is an element in which the coating layer 75 is further provided in the semiconductor light emitting element 110.

  The covering layer 75 protects the reflective layer 60, for example. The optical characteristics of the coating layer 75 are arbitrary. For example, the coating layer 75 is transmissive, reflective, or absorptive with respect to the emitted light. In the case where the covering layer 75 is transmissive, the materials described for the base insulating layer 70 can be used for the covering layer 75. In addition, when the covering layer 75 is reflective, the materials described for the reflecting layer 60 can be used for the covering layer 75.

  The covering layer 75 includes, for example, an organic resin. For the coating layer 75, for example, polyimide or the like can be used. However, the embodiment is not limited to this, and an inorganic material may be used for the covering layer 75. The covering layer 75 is insulative, for example. By providing the covering layer 75, for example, reliability is improved.

FIG. 19 is a schematic cross-sectional view illustrating the configuration of another semiconductor light emitting element according to the third embodiment.
As shown in FIG. 19, the semiconductor light emitting device 131 according to this embodiment further includes a coating layer 75 that covers the reflective layer 60. That is, the semiconductor light emitting element 131 is an element in which the coating layer 75 is further provided in the semiconductor light emitting element 120.

  Also in the semiconductor light emitting devices 130 and 131, the reflective layer 60 covers the side surface 5s of the substrate 5 and the side surface 15s (the outer edge side surface 15r and the boundary side surface 15t) of the stacked body 15. Also in the semiconductor light emitting device 120, a highly efficient semiconductor light emitting device can be provided.

  The covering layer 75 can be provided in any of the semiconductor light-emitting elements described in connection with the first and second embodiments and the modified semiconductor light-emitting elements.

  When the covering layer 75 is provided, the base insulating layer 70 is provided as necessary and may be omitted. According to this embodiment, a semiconductor light emitting device with high efficiency and high reliability can be provided.

  In the semiconductor light emitting device described in regard to the second and third embodiments, the third portion 13 is provided as necessary and may be omitted.

  At least one of the wavelength conversion layer 90 and the light transmission layer 91 can be provided in any of the semiconductor light-emitting elements described in connection with the first to third embodiments and the modified semiconductor light-emitting elements.

The semiconductor light emitting element according to the embodiment can be used as a light source for, for example, a lighting device or a display device.
According to the embodiment, a highly efficient semiconductor light emitting device is provided.

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added for controlling various physical properties such as conductivity type, and unintentionally Those further including various elements included are also included in the “nitride semiconductor”.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. is good.

  The embodiments of the present invention have been described above with reference to specific examples. However, embodiments of the present invention are not limited to these specific examples. For example, regarding a specific configuration of each element such as a substrate, a semiconductor layer, a light emitting unit, a laminate, an electrode, a base insulating layer, a reflective layer, a coating layer, a wavelength conversion layer, and a light transmission layer included in the semiconductor light emitting element It is included in the scope of the present invention as long as a person skilled in the art can carry out the present invention by selecting appropriately from the known ranges and obtain the same effect.

  Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all semiconductor light-emitting elements that can be implemented by those skilled in the art based on the semiconductor light-emitting elements described above as embodiments of the present invention are included in the scope of the present invention as long as they include the gist of the present invention. Belonging to.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 5 ... Board | substrate, 5a ... Main surface, 5b ... Substrate back surface, 5s ... Side surface, 10 ... 1st semiconductor layer, 11 ... 1st part, 12 ... 2nd part, 13 ... 3rd part, 15 ... Laminated body, 15a ... 1st surface, 15b ... 2nd surface, 15r ... outer edge side surface, 15s ... side surface, 15t ... boundary side surface, 20 ... 2nd semiconductor layer, 30 ... light emitting part, 31 ... barrier layer, 32 ... well layer, 40 ... 1st surface Electrode, 46e ... n-side wiring, 47b ... n-side connection member, 50 ... second electrode, 51, 51a, 51b, 51c ... p-side electrode, 52 ... p-side conductive layer, 53 ... reflection film, 56e ... p-side wiring 57b ... p-side connection member 60 ... reflection layer 61 ... multilayer dielectric film 61a ... first dielectric layer 61b ... second dielectric layer 62 ... reflection insulation film 70 ... underlying insulation layer 71 ... insulation Layer, 75 ... coating layer, 90 ... wavelength conversion layer, DESCRIPTION OF SYMBOLS 1 ... Light transmission layer, 95 ... Mounting component, 96 ... Base | substrate, 97 ... Insulating layer, (theta) ... Taper angle, 110, 110a-110c, 111-116, 119a-119c, 120-123, 130, 131 ... Semiconductor light-emitting device 510, light emitting device, BL, BLi, barrier layer, L1, emitted light, L2, converted light, WL, WLi, well layer, d1, d2, distance, d3, length, d4 to d6, diameter, l1, distance L2, l3 ... length, t61a, t61b ... length

Claims (5)

A substrate having a main surface;
A first semiconductor layer of a first conductivity type provided on the main surface, having a first portion and a second portion juxtaposed with the first portion;
A light emitting portion provided on the second portion;
A second semiconductor layer of a second conductivity type provided on the light emitting unit;
A laminate comprising:
A first electrode provided on the first portion of the first semiconductor layer;
A second electrode provided on the second semiconductor layer;
A reflective layer that covers the side surface of the substrate and the side surface of the laminate, and is reflective to the emitted light emitted from the light emitting unit;
A semiconductor light emitting device comprising: The stacked body includes an outer edge side surface of an outer edge when viewed in a first direction from the first semiconductor layer toward the second semiconductor layer, a boundary side surface positioned between the first portion and the second portion, Have
The semiconductor light emitting element according to claim 1, wherein the reflective layer covers at least a part of the outer edge side surface and at least a part of the boundary side surface.   The semiconductor light emitting element according to claim 2, wherein the reflective layer is insulative.   4. The semiconductor light emitting element according to claim 3, wherein the reflective layer covers an edge portion and a side surface of the first electrode and covers an edge portion and a side surface of the second electrode. Further comprising a base insulating layer;
The at least part of the base insulating layer is provided between the at least part of the outer edge side surface and the reflective layer, and between the at least part of the boundary side surface and the reflective layer. The semiconductor light emitting element as described in any one of 2-4.

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