JP2013057660A - 独立光源を用いたウェハ温度測定のための方法及び装置 - Google Patents
独立光源を用いたウェハ温度測定のための方法及び装置 Download PDFInfo
- Publication number
- JP2013057660A JP2013057660A JP2012161877A JP2012161877A JP2013057660A JP 2013057660 A JP2013057660 A JP 2013057660A JP 2012161877 A JP2012161877 A JP 2012161877A JP 2012161877 A JP2012161877 A JP 2012161877A JP 2013057660 A JP2013057660 A JP 2013057660A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- light
- signal
- transmittance
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161531327P | 2011-09-06 | 2011-09-06 | |
| US61/531,327 | 2011-09-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013057660A true JP2013057660A (ja) | 2013-03-28 |
| JP2013057660A5 JP2013057660A5 (https=) | 2015-08-27 |
Family
ID=47753466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012161877A Withdrawn JP2013057660A (ja) | 2011-09-06 | 2012-07-20 | 独立光源を用いたウェハ温度測定のための方法及び装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20130059403A1 (https=) |
| JP (1) | JP2013057660A (https=) |
| KR (1) | KR101464477B1 (https=) |
| CN (1) | CN102980663A (https=) |
| TW (1) | TW201312673A (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11022877B2 (en) | 2017-03-13 | 2021-06-01 | Applied Materials, Inc. | Etch processing system having reflective endpoint detection |
| CN109724712B (zh) * | 2017-10-31 | 2021-04-30 | 上海微电子装备（集团）股份有限公司 | 温度检测装置及其制造方法和激光表面退火设备 |
| KR102421732B1 (ko) | 2018-04-20 | 2022-07-18 | 삼성전자주식회사 | 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치 |
| CN114127524B (zh) | 2019-06-03 | 2024-04-09 | 应用材料公司 | 非接触式的低基板温度测量方法 |
| WO2021173682A1 (en) * | 2020-02-28 | 2021-09-02 | Mattson Technology, Inc. | Transmission-based temperature measurement of a workpiece in a thermal processing system |
| US11688616B2 (en) * | 2020-07-22 | 2023-06-27 | Applied Materials, Inc. | Integrated substrate measurement system to improve manufacturing process performance |
| US12283503B2 (en) | 2020-07-22 | 2025-04-22 | Applied Materials, Inc. | Substrate measurement subsystem |
| US11359972B2 (en) * | 2020-09-15 | 2022-06-14 | Applied Materials, Inc. | Temperature calibration with band gap absorption method |
| TWI765571B (zh) * | 2021-02-09 | 2022-05-21 | 華邦電子股份有限公司 | 熱板冷卻系統 |
| US12235624B2 (en) | 2021-12-21 | 2025-02-25 | Applied Materials, Inc. | Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing |
| US12148647B2 (en) | 2022-01-25 | 2024-11-19 | Applied Materials, Inc. | Integrated substrate measurement system |
| US12339645B2 (en) | 2022-01-25 | 2025-06-24 | Applied Materials, Inc. | Estimation of chamber component conditions using substrate measurements |
| US12216455B2 (en) | 2022-01-25 | 2025-02-04 | Applied Materials, Inc. | Chamber component condition estimation using substrate measurements |
| KR102703004B1 (ko) * | 2022-04-01 | 2024-09-04 | 한국기계연구원 | 플라즈마 장치용 공정 모니터링 시스템 |
| CN120981904A (zh) * | 2023-04-25 | 2025-11-18 | 应用材料公司 | 包括能带间隙材料的测量系统、处理系统以及相关设备与方法 |
| KR102784412B1 (ko) * | 2024-08-14 | 2025-03-21 | (주)디바이스이엔지 | 가열 유닛이 장착된 기판 처리 장치 |
| CN119310065A (zh) * | 2024-11-01 | 2025-01-14 | 山东大学 | 基于libs的非接触式瞬态高温测量系统 |
| CN121204628B (zh) * | 2025-11-28 | 2026-03-17 | 浙江晟霖益嘉科技有限公司 | 一种pvd加热室的温度控制方法 |
| CN121346983B (zh) * | 2025-12-03 | 2026-03-20 | 盛吉盛半导体科技(北京)有限公司 | 一种基于透射与辐射的晶圆测温方法、装置、设备及介质 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100255961B1 (ko) | 1994-03-11 | 2000-05-01 | 아끼구사 나오유끼 | 물리량 측정방법 및 장치, 반도체 장치의 제조방법과 파장측정방법 및 장치 |
| AU3084101A (en) * | 2000-01-05 | 2001-07-16 | Tokyo Electron Limited | A method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer |
| KR100636016B1 (ko) * | 2000-11-06 | 2006-10-18 | 삼성전자주식회사 | 반도체 제조를 위한 기판의 온도를 측정하는 방법 및 장치 |
| US20090316749A1 (en) * | 2008-06-23 | 2009-12-24 | Matthew Fenton Davis | Substrate temperature measurement by infrared transmission in an etch process |
-
2012
- 2012-06-30 US US13/539,340 patent/US20130059403A1/en not_active Abandoned
- 2012-07-04 TW TW101124043A patent/TW201312673A/zh unknown
- 2012-07-18 KR KR1020120078164A patent/KR101464477B1/ko not_active Expired - Fee Related
- 2012-07-20 JP JP2012161877A patent/JP2013057660A/ja not_active Withdrawn
- 2012-07-20 CN CN2012102599761A patent/CN102980663A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130027076A (ko) | 2013-03-14 |
| KR101464477B1 (ko) | 2014-11-24 |
| US20130059403A1 (en) | 2013-03-07 |
| CN102980663A (zh) | 2013-03-20 |
| TW201312673A (zh) | 2013-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150702 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150702 |
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| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20150917 |