CN102980663A - 用于使用独立光源的晶片温度测量的方法和设备 - Google Patents

用于使用独立光源的晶片温度测量的方法和设备 Download PDF

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Publication number
CN102980663A
CN102980663A CN2012102599761A CN201210259976A CN102980663A CN 102980663 A CN102980663 A CN 102980663A CN 2012102599761 A CN2012102599761 A CN 2012102599761A CN 201210259976 A CN201210259976 A CN 201210259976A CN 102980663 A CN102980663 A CN 102980663A
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CN
China
Prior art keywords
substrate
light
signal
temperature
wavelength
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Pending
Application number
CN2012102599761A
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English (en)
Chinese (zh)
Inventor
贾瑞德·艾哈迈德·李
吉萍·李
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN102980663A publication Critical patent/CN102980663A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Radiation Pyrometers (AREA)
CN2012102599761A 2011-09-06 2012-07-20 用于使用独立光源的晶片温度测量的方法和设备 Pending CN102980663A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161531327P 2011-09-06 2011-09-06
US61/531,327 2011-09-06

Publications (1)

Publication Number Publication Date
CN102980663A true CN102980663A (zh) 2013-03-20

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Family Applications (1)

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CN2012102599761A Pending CN102980663A (zh) 2011-09-06 2012-07-20 用于使用独立光源的晶片温度测量的方法和设备

Country Status (5)

Country Link
US (1) US20130059403A1 (https=)
JP (1) JP2013057660A (https=)
KR (1) KR101464477B1 (https=)
CN (1) CN102980663A (https=)
TW (1) TW201312673A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109724712A (zh) * 2017-10-31 2019-05-07 上海微电子装备（集团）股份有限公司 温度检测装置及其制造方法和激光表面退火设备
CN115516614A (zh) * 2020-09-15 2022-12-23 应用材料公司 利用带隙吸收法的温度校正
CN119310065A (zh) * 2024-11-01 2025-01-14 山东大学 基于libs的非接触式瞬态高温测量系统
CN121346983A (zh) * 2025-12-03 2026-01-16 盛吉盛半导体科技(北京)有限公司 一种基于透射与辐射的晶圆测温方法、装置、设备及介质

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11022877B2 (en) 2017-03-13 2021-06-01 Applied Materials, Inc. Etch processing system having reflective endpoint detection
KR102421732B1 (ko) 2018-04-20 2022-07-18 삼성전자주식회사 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치
CN114127524B (zh) 2019-06-03 2024-04-09 应用材料公司 非接触式的低基板温度测量方法
WO2021173682A1 (en) * 2020-02-28 2021-09-02 Mattson Technology, Inc. Transmission-based temperature measurement of a workpiece in a thermal processing system
US11688616B2 (en) * 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
US12283503B2 (en) 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
TWI765571B (zh) * 2021-02-09 2022-05-21 華邦電子股份有限公司 熱板冷卻系統
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
KR102703004B1 (ko) * 2022-04-01 2024-09-04 한국기계연구원 플라즈마 장치용 공정 모니터링 시스템
CN120981904A (zh) * 2023-04-25 2025-11-18 应用材料公司 包括能带间隙材料的测量系统、处理系统以及相关设备与方法
KR102784412B1 (ko) * 2024-08-14 2025-03-21 (주)디바이스이엔지 가열 유닛이 장착된 기판 처리 장치
CN121204628B (zh) * 2025-11-28 2026-03-17 浙江晟霖益嘉科技有限公司 一种pvd加热室的温度控制方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168310B1 (en) * 1994-03-11 2001-01-02 Fujitsu Limited Device for measuring physical quantity using pulsed laser interferometry
KR20020035333A (ko) * 2000-11-06 2002-05-11 윤종용 반도체 제조를 위한 기판의 온도를 측정하는 방법 및 장치
US20020189757A1 (en) * 2000-01-05 2002-12-19 Denton Medona B. Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
CN102066888A (zh) * 2008-06-23 2011-05-18 应用材料公司 在蚀刻制程中利用红外线传输的衬底温度测量

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168310B1 (en) * 1994-03-11 2001-01-02 Fujitsu Limited Device for measuring physical quantity using pulsed laser interferometry
US20020189757A1 (en) * 2000-01-05 2002-12-19 Denton Medona B. Method of wafer band-edge measurement using transmission spectroscopy and a process for controlling the temperature uniformity of a wafer
KR20020035333A (ko) * 2000-11-06 2002-05-11 윤종용 반도체 제조를 위한 기판의 온도를 측정하는 방법 및 장치
CN102066888A (zh) * 2008-06-23 2011-05-18 应用材料公司 在蚀刻制程中利用红外线传输的衬底温度测量

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109724712A (zh) * 2017-10-31 2019-05-07 上海微电子装备（集团）股份有限公司 温度检测装置及其制造方法和激光表面退火设备
CN109724712B (zh) * 2017-10-31 2021-04-30 上海微电子装备（集团）股份有限公司 温度检测装置及其制造方法和激光表面退火设备
CN115516614A (zh) * 2020-09-15 2022-12-23 应用材料公司 利用带隙吸收法的温度校正
CN119310065A (zh) * 2024-11-01 2025-01-14 山东大学 基于libs的非接触式瞬态高温测量系统
CN121346983A (zh) * 2025-12-03 2026-01-16 盛吉盛半导体科技(北京)有限公司 一种基于透射与辐射的晶圆测温方法、装置、设备及介质

Also Published As

Publication number Publication date
JP2013057660A (ja) 2013-03-28
KR20130027076A (ko) 2013-03-14
KR101464477B1 (ko) 2014-11-24
US20130059403A1 (en) 2013-03-07
TW201312673A (zh) 2013-03-16

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