JP2013056785A - Seeding method in tgg single crystal growth - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a seeding method in TGG single crystal growth capable of producing easily, by the Czochralski method, a paramagnetic garnet crystal (with a composition formula: TbGaO) containing, as a main component, terbium-gallium-garnet (TGG) used as a Faraday rotator for an optical isolator.SOLUTION: In this seeding method in terbium-gallium-garnet (TGG) single crystal growth for bringing a seed crystal into contact with a raw material melt and pulling up a grown crystal by the Cz method (rotating pulling up method), a crystal which is a single crystal having the same garnet structure as TGG, whose melting point is ≥1,750°C, and whose lattice constant difference from TGG is ≤±3% is used as the seed crystal. Since a seed crystal having a specific melting point and a specific lattice constant difference with TGG is used, a problem of dissolution of the seed crystal is not generated when pulling up a crystal by the Cz method, and therefore the success rate of seeding is heightened and a high-quality TGG crystal can be grown.

Description

The present invention relates to a seeding method in TGG single crystal growth, and more specifically, a paramagnetic garnet crystal (compositional formula Tb ₃ Ga) mainly composed of terbium gallium garnet (TGG) used as a Faraday rotator for an optical isolator. _{The present} invention relates to a seeding method in TGG single crystal growth in which ₅ O ₁₂ ) can be easily produced by the Czochralski method.

  For optical isolators and high-temperature superconducting cables, rare earth / gallium / garnet crystals such as neodymium / gallium / garnet (NGG) crystals, samarium / gallium / garnet (SGG) crystals, gadolinium / gallium / garnet (GGG) crystals, etc. It is used.

As a general method for producing a rare earth / gallium / garnet crystal, a Czochralski method (CZ method: rotational pulling method) is known in which a seed crystal is attached to a raw material melted in a crucible and pulled while rotating. By this CZ method, neodymium gallium garnet (NGG) crystal, samarium gallium garnet (SGG) crystal, gadolinium gallium garnet (GGG) crystal and the like are produced. And the method of manufacturing a lanthanum ytterbium gallium garnet (LYGG) crystal | crystallization by CZ method is proposed (patent document 1).
On the other hand, regarding the growth of a gadolinium gallium garnet (GGG) crystal, the present applicant suppresses the occurrence of cracks in the shoulder portion, particularly in a large single crystal, and cuts the shoulder portion from the straight body portion. The growth method which can prevent the crack propagation to a part is proposed, and it has confirmed that a garnet single crystal with few distortions is obtained by pulling up using a GGG crystal as a seed crystal (patent documents 2). Thus, conventionally, the same type of crystal as the crystal to be grown is used as the seed crystal.

By the way, the rare earth / gallium / garnet crystal includes a terbium / gallium / garnet crystal (hereinafter sometimes abbreviated as TGG crystal) using terbium as a rare earth. This TGG crystal is known as a crystal with low optical loss, high thermal conductivity, high damage threshold, and high Verde constant, and is mainly used for rotators and optical isolators for 400 nm to 1100 nm (excluding 470 nm to 500 nm). ing.
In the case of the GGG crystal growth, since the GGG seed crystal does not melt easily even when it comes into contact with the GGG melt, it was possible to grow the crystal.

However, when both the seed crystal and the grown crystal are TGG, if the TGG crystal is manufactured by the CZ method using the TGG crystal as the seed crystal, the seed crystal melts and the seeding success rate is low and stable. I couldn't train.
Therefore, a TGG single that can be easily manufactured by the Czochralski method using a paramagnetic garnet crystal (composition formula Tb ₃ Ga ₅ O ₁₂ ) mainly composed of terbium gallium garnet (TGG) used as a Faraday rotator for an optical isolator. There was a need for a seeding method for crystal growth.

JP-A-10-001397 (Example 1) JP 2005-29400 A

  An object of the present invention is to grow an oxide single crystal that can easily produce a terbium gallium garnet (TGG) crystal by the Czochralski method without causing twisting or distortion in the crystal. It is to provide a method.

  In order to solve the above-mentioned conventional problems, the present inventors have conducted intensive research, and in growing a terbium gallium garnet (TGG) single crystal by the Cz method (rotary pulling method), different compositions as seed crystals. By adopting a material having a higher melting point than TGG and a specific difference in lattice constant from TGG, the seed crystal does not dissolve during seeding, the seeding success rate is increased, and high quality is easily achieved. The present inventors have found that a TGG crystal can be produced and have completed the present invention.

  That is, according to the first invention of the present invention, seeding in terbium gallium garnet (TGG) single crystal growth in which a seed crystal is brought into contact with a raw material melt to pull up a grown crystal by the Cz method (rotary pulling method). In the method, TGG single crystal growth characterized in that a single crystal having the same garnet structure as TGG, a crystal having a melting point of 1750 ° C. or higher and a lattice constant difference of ± 3% or less from TGG is used as a seed crystal. A seeding method is provided.

According to the second invention of the present invention, in the first invention, a TGG single crystal growth characterized in that any one selected from a YAG single crystal, a GGG single crystal, or a GSGG single crystal is used as a seed crystal. A seeding method is provided.
According to the third invention of the present invention, in the first or second invention, as a seed crystal, the tip diameter is a tapered shape of 3 mm or more and 5 mm or less, and the surface within 5 mm from the tip is expressed by arithmetic mean roughness Ra. There is provided a seeding method for growing a TGG single crystal characterized by using a single crystal finished to 10 μm or less.
Furthermore, according to the fourth invention of the present invention, in any one of the first to third inventions, the inside of the furnace is an inert gas atmosphere containing 4% by volume or less of oxygen, and the gas flow rate is 1 to 5 L / min. A seeding method for TGG single crystal growth is provided.

According to the present invention, when pulling up a crystal by the Cz method, since the melting point is higher than TGG and a specific lattice constant difference from TGG is used as the seed crystal, there is no problem of dissolution of the seed crystal. The success rate of seeding is increased and high quality TGG crystals can be grown. Although the success rate of seeding was about 40% in the conventional breeding method, a success rate close to 100% can be obtained.
In addition, if a TGG single crystal is grown using a seed crystal whose tip shape and surface roughness have specific physical properties, the occurrence of cracks is greatly reduced. Crystals can be easily grown by a general production method.
And since the TGG crystal obtained by this is high quality, the TGG single crystal which is excellent in an optical characteristic as a rotor of a visible light wavelength region optical isolator is obtained comparatively easily, and the optical isolator for visible light wavelength regions is obtained. Can be put into practical use.

It is a perspective view which shows the tip shape of the seed crystal used for the method of this invention. It is a schematic diagram which shows the state which has pulled up the single crystal by this invention.

  Hereinafter, the seeding method in the TGG single crystal growth of the present invention will be described in detail with reference to the drawings.

  The seeding method for TGG single crystal growth according to the present invention is a seeding for terbium gallium garnet (TGG) single crystal growth in which a seed crystal is brought into contact with a raw material melt and pulled up by a Cz method (rotary pulling method). In the method, the seed crystal is a single crystal having the same garnet structure as TGG, having a melting point of 1750 ° C. or higher and a lattice constant difference with TGG of ± 3% or less.

1. Seed Crystal In the TGG growth in the present invention, the seed crystal is a single crystal having the same garnet structure as the TGG to be grown, but is a crystal having a different composition from the TGG single crystal to be grown and has a melting point of 1750 ° C. or higher. A crystal having a lattice constant difference with TGG of ± 3% or less is used.

In the present invention, it is an essential requirement that the melting point of the seed crystal is 1750 ° C. or higher. When the temperature gradient in the pulling axis direction must be made gentle to avoid crystal defects during TGG growth, the seed crystal in contact with the TGG melt must not be functionally melted. If a seed crystal having a melting point suitable for this is selected, the temperature becomes 1750 ° C. or higher. If a seed crystal having a lower melting point is selected, the seed crystal melts after coming into contact with the TGG melt, so that the grown crystal (TGG) cannot be pulled up.
Even if the seed crystal does not dissolve in the TGG melt, if the lattice constant difference with TGG exceeds ± 3%, defects such as cracks occur in the grown crystal. Accordingly, a crystal having a melting point of 1750 to 2000 ° C. and a difference in lattice constant from TGG of ± 2.8% or less is suitable.

  As such a preferred seed crystal, for example, a YAG single crystal (melting point 1970 ° C., lattice constant difference 2.753% with TGG; 12.01 ° / 12.35 °), GGG single crystal (melting point 2098 ° C., lattice with TGG) A constant difference of 0.24%) or a GSGG single crystal (melting point: 1750 to 1850 ° C., lattice constant difference of 1.70% with TGG; 12.56 参照 /12.35Å) (see Table 1).

In addition, it is desirable that the crystal to be grown has no crystal defects, but one of the defects, “dislocation”, may occur. A dislocation is not a type of defect in which a single atom is deficient or excessive, but a defect in which the positions of atoms arranged on a line are shifted together. Such dislocations are difficult to deal with because they grow by extending or branching due to temperature changes. When trying to grow a large crystal by the CZ method, the temperature difference between the central portion and the outside increases, and the crystal is distorted, which causes dislocation.
In order to eliminate this dislocation, the crystal near the seed crystal is thinned as shown in FIG. Thus, when the crystal is thinned, the temperature difference is reduced, the dislocation is reduced, and it can be completely eliminated. In TGG, once there is no dislocation, no dislocation is newly generated even if a considerable temperature difference is applied to the crystal.
Therefore, in the present invention, it is preferable to use the tip of the seed crystal having a tapered shape with a tip diameter of 3 mm or more and 5 mm or less, and finishing the surface within 5 mm from the tip to an arithmetic average roughness Ra of 10 μm or less.

2. Crystal Growth Device In the seeding method of the present invention, a known single crystal growth device used for TGG growth can be used.

  That is, seeding is performed using a manufacturing apparatus as shown in FIG. The manufacturing apparatus a includes a crucible d whose outside is covered with a heat insulating material b and a raw material c is charged therein, a high-frequency heating coil e which is disposed outside the heat insulating material b and heats the raw material in the crucible d, The crucible d is provided on the upper side of the crucible d so that it can be moved up and down, the seed crystal f is held at the tip of the crucible d, and the main part is composed of a pulling shaft g that rotates in the direction of the arrow. Embedded in an outer sealed pressure vessel.

3. Crystal Growth In order to manufacture a single crystal, first, the raw material c is charged in the crucible d of the above manufacturing apparatus, and then the high frequency heating coil e is energized to cause the crucible d to generate heat by a high frequency induction heating method. The raw material c in the crucible d is heated to a temperature equal to or higher than its melting point and melted.
Next, a single crystal piece such as LN to be the seed crystal f is brought into contact with the center portion of the raw material melt melted by lowering the pulling shaft g. Then, by adjusting the high frequency power supplied to the crucible d to gradually solidify the raw material melt around the seed crystal f, and continuously raising the seed crystal f while rotating it, A substantially cylindrical single crystal h is manufactured.

(Raw material for single crystals)
In the present invention, as the single crystal raw material, an oxide powder containing Tb oxide selected from Tb ₂ O ₃ or Tb ₄ O ₇ and Ga ₂ O ₃ of Ga oxide is used. Their purity is preferably 4N or higher. The amount of Tb oxide and Ga oxide that are basically in the ratio of Tb: Ga: O = 3: 5: 12 is used.

(Heat melting)
Next, the raw material powder in the crucible is heated and melted. At that time, the furnace atmosphere is preferably a mixed gas atmosphere of an inert gas such as oxygen and nitrogen. The component composition and gas flow rate of the mixed gas atmosphere are not particularly limited, but oxygen is 4% by volume or less, more preferably 2% by volume or less, and the gas flow rate is 1 to 5 L / min, more preferably 2 to 2%. 3 L / min is preferable in terms of sublimation of gallium oxide and suppression of oxidation of the crucible. When the amount of oxygen is excessive, the crucible is oxidized, and iridium oxide is floated when the seed touch is performed, and solidification of crystals may occur from the iridium oxide, which may hinder the seed touch.
In the present invention, since the composition of the seed crystal is different from that of the grown crystal, the range of the prior art can be adopted for the heating temperature and the heating time.

(Seeding)
When the raw material is melted, the seed crystal axis is lowered while rotating at an appropriate rotation speed, and a seed crystal is attached to the melt. Seeding means that the seed crystal comes into contact with the melt surface melted in the crucible, and is an operation for starting the pulling of the grown crystal. This is also called touch. The touch temperature is the temperature at the bottom of the crucible when the seed crystal is in contact with the melt, and is indicated by the electromotive force of the thermocouple.

As a conventional method, the present applicant tried a method of growing a TGG single crystal by using a TGG single crystal as a seed crystal and changing the touch temperature in various ways. First, a terbium oxide (Tb ₄ O ₇ ) raw material having a purity of 99.99% and a gallium oxide (Ga ₂ O ₃ ) having a purity of 99.99% were prepared. This preparation was mixed, put into an iridium crucible, melted using a normal high-frequency heating furnace, and crystals were grown by the CZ method.
A TGG crystal (Tb ₃ Ga ₅ O ₁₂ crystal, melting point 1725 ° C.) cut into a 7 mm square was used as a seed crystal. The growth atmosphere was an atmosphere in which the oxygen concentration was 2% and the rest was nitrogen gas, and the gas flow rate was 2.5 liters / minute. Thereafter, the seed crystal was brought into contact with the melt, and the grown crystal was pulled at a seed crystal rotation speed of 0.5 to 13 rpm and a pulling speed of 1 mm / h.

First, when the touch temperature was set to 10.775 mV and the TGG seed crystal was lowered toward the melt, solidification of the melt started before touching. Therefore, the touch temperature was gradually increased to 10.890 mV and lowered again, but solidification occurred in the same manner. Therefore, when the touch temperature was increased to 11.000 mV and lowered again, the seed crystal began to melt before touching. Therefore, when the touch temperature was lowered to 10.847 mV and lowered again, solidification of the melt started. This time, when the touch temperature was gradually increased to 10.960 mV and lowered again, the seed crystal began to melt before touching. Again, the touch temperature was lowered to 10.910 mV and lowered, but the seed crystal began to melt before touch. This time, when the touch temperature was lowered to 10.860 mV and lowered again, the seed crystal started to melt before the touch, and finally the pulling could not be successfully performed (see Comparative Example 2).
One of the factors that cause the reversal of the temperature is that the melting of the seed crystal starts at a touch temperature of 10.860 mV, and the solidification of the melt starts at a higher touch temperature of 10.890 mV. There is a situation where solidification starts with the floating substance oxidized. It is actually difficult to eliminate such factors.

  Considering the above state, when the TGG crystal is pulled up, the seed crystal and the grown crystal are the same, so the melting point and the seed crystal have the same melting point. It seems that the result was divided. In such a situation, since stable seeding cannot be expected, a seed crystal that does not melt is adopted. A melting point of the crystal that is not soluble in the TGG melt is 1750 ° C. or higher. However, when using a seed crystal of a different type from the grown crystal, if the difference between the lattice constants of both crystals is large, problems such as cracks occur in the grown crystal. Therefore, it is necessary to employ a crystal having a difference in lattice constant of ± 3% or less as a seed crystal.

That is, in the present invention, as a seed crystal, a single crystal having the same garnet structure as TGG, a melting point of 1750 ° C. or higher, and a lattice constant difference with TGG of ± 3% or less, specifically, YAG By using a single crystal, a GGG single crystal, or a GSGG single crystal, the above-described problems are to be solved. As the seed crystal, it is preferable to use a single crystal having a tapered shape with a tip diameter of 3 mm or more and 5 mm or less and a surface within 5 mm from the tip finished with an arithmetic average roughness Ra of 10 μm or less.
This made it possible to greatly increase the success rate of seeding.

(Single crystal pulling)
In the growth of the single crystal, the inside of the chamber is maintained in a mixed gas atmosphere, the number of rotations and the pulling speed are adjusted, the neck portion and the shoulder portion are formed, and the straight body portion is subsequently formed. The crystal shape is adjusted by measuring the crystal weight during growth, deriving the diameter, growth rate, and the like by calculation, and adjusting the rotation speed and pulling speed. Further, the melt temperature is controlled by feeding back the change in crystal weight to the electric power supplied to the heater.

With a TGG crystal, shape control is relatively easy when the crystal diameter is as small as about 1 inch. However, when the crystal diameter of the straight body part greatly exceeds 1 inch, for example, when the crystal diameter is expanded to about 50 mm, as described above, twist and distortion in the crystal are produced, and a high-quality TGG crystal is manufactured. You will not be able to.
In the case of TGG, the temperature gradient in the growth axis direction is generally about several tens to 100 ° C./cm, and is one or more orders of magnitude sharper than those other than garnet crystals. One of the reasons why the temperature gradient is different is due to the difference in the viscosity of the melt. Since the viscosity of the raw material melt of TGG crystal is relatively low, the convection in the melt tends to be disturbed under a low temperature gradient. This is because growth is difficult.

Therefore, a flat plate-shaped zirconium-made diaphragm having an inner diameter (D) of 1.3 times or less of the straight body diameter (d) at the upper part of the crucible while the crystal spreading angle θ is not less than a specific angle. It is preferable that the radial temperature gradient on the melt surface is strengthened by passing the.
The spread angle θ of the crystal shoulder is 45 ° or more, preferably 60 ° or more. If the divergence angle θ is less than 45 °, the crystal is twisted and cracks are not preferable. Even if the inner diameter of the diaphragm exceeds 1.3 times the diameter of the straight body of the crystal, the crystal is twisted and cracked. In a crystal in which twist is generated, even if a sample is cut out, the extinction ratio is less than the lower limit of 30 dB that can be used as an optical isolator.
The pulling speed is not particularly limited, but is preferably 1 to 5 mm / hr, and preferably 1 to 3 mm / hr. The rotation speed is not particularly limited, but is preferably 5 to 20 rpm, for example, and preferably 8 to 15 rpm.

  After the single crystal is grown in the crucible in this way and pulled up, and then grown to a preset crystal length, the process proceeds to a step of separating the crystal from the melt, and then the temperature is lowered by the sequence pattern of the control device. .

  Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples. The seeding results were evaluated by observing the surface of the seed crystal and the interface with the grown crystal, and Δ: rapid growth / solidification, X: melting, ○: good.

(Comparative Examples 1-10)
First, a terbium oxide (Tb ₄ O ₇ ) raw material having a purity of 99.99% and a gallium oxide (Ga ₂ O ₃ ) having a purity of 99.99% were prepared. This raw material powder was mixed, put into an iridium crucible, melted using a normal high-frequency heating furnace, and a crystal was grown by the CZ method. The iridium crucible had a diameter of about 160 mm and a height of about 160 mm, and a TGG crystal (Tb ₃ Ga ₅ O ₁₂ crystal, melting point 1725 ° C.) cut into a 7 mm square was used as a seed crystal. The diameter of the crystal to be grown was 60 mm and the total length was 120 mm. The growth atmosphere was an atmosphere in which the oxygen concentration was 2% and the rest was nitrogen gas, and the gas flow rate was 2.5 liters / minute. Thereafter, the seed crystal was brought into contact with the melt, and the grown crystal was pulled at a seed crystal rotation speed of 0.5 to 13 rpm and a pulling speed of 1.0 mm / h.
In the case of Comparative Example 1 (TG-047), when the touch temperature was set to 10.470 mV and the TGG seed crystal was lowered toward the melt, solidification of the melt started before touching. Therefore, when the touch temperature was gradually increased to 10.860 mV and lowered again, the seed crystal began to melt before touching. Therefore, when the touch temperature was lowered to 10.700 mV and lowered again, solidification of the melt started. This time, when the touch temperature was gradually increased to 10.760 mV and then lowered again, the pulling could be successful.
Also, in the case of Comparative Example 2 (TG-048), it was performed seven times in the same manner, but the pulling could not be successful, and when the touch temperature was set to 10.855 mV again, the pulling was finally successful. (Comparative Example 3 (TG-048 re)).
. In Comparative Examples 4 to 10, the growth was performed in the same manner. As a result, as shown in Table 2, the success rate was low.

(Examples 1-4)
First, a terbium oxide (Tb ₄ O ₇ ) raw material having a purity of 99.99% and a gallium oxide (Ga ₂ O ₃ ) having a purity of 99.99% were prepared. This raw material powder was mixed, put into an iridium crucible, melted using a normal high-frequency heating furnace, and a crystal was grown by the CZ method. The iridium crucible has a diameter of about 160 mm and a height of about 160 mm. As a seed crystal, a GSGG crystal (Gd ₃ Sc ₂ Ga) cut into a 7 mm square (tip length 8 mm, tip diameter 3 mm) as shown in FIG. ₃ O ₁₂ crystal, melting point 1750-1850 ° C., lattice constant difference with TGG 1.7%) was used. The diameter of the crystal to be grown was 60 mm and the total length was 120 mm. The growth atmosphere was an atmosphere in which the oxygen concentration was 2% and the rest was nitrogen gas, and the gas flow rate was 2.5 liters / minute. Thereafter, the seed crystal was brought into contact with the melt, and the grown crystal was pulled at a seed crystal rotation speed of 5.0 to 15.0 rpm and a pulling speed of 1.0 to 1.5 mm / h. As shown in Table 3, the results of the breeding were all good as seeding succeeded once.

(Examples 5 to 26)
In the same manner as in Examples 1 to 4, raw material powders were mixed, put into an iridium crucible, melted using a normal high-frequency heating furnace, and crystals were grown by the CZ method. The shape of the iridium crucible has a diameter of about 160 mm and a height of about 160 mm. As a seed crystal, a YAG crystal cut into a 7 mm square (Y ₃ Al ₅ O ₁₂ crystal, melting point 1970 ° C., difference in lattice constant from TGG is 2.753%. ) Was used. The diameter of the crystal to be grown was 60 mm and the total length was 120 mm. The growth atmosphere was an atmosphere in which the oxygen concentration was 2% and the rest was nitrogen gas, and the gas flow rate was 2.5 liters / minute. Thereafter, the seed crystal was brought into contact with the melt, and the grown crystal was pulled at a seed crystal rotation speed of 0.5 to 13.0 rpm and a pulling speed of 0.5 to 13.0 mm / h. As shown in Table 3, the results of the breeding were all good as seeding succeeded once.

  Then, five crystals having a diameter of 4.2 mm and a length of 12.6 mm were hollowed out from the garnet crystal of Example 9, and both ends were mirror-finished. As a result, no bubbles and inclusions were found. As a result of measuring the quenching performance of this hollowed crystal, it was confirmed that 42, 42.5, 43, 44.5, and 45 dB were very good values, and that it could be used without problems for optical isolator applications.

(Example 27)
Using a GGG crystal (Gd ₃ Ga ₅ O ₁₂ ) cut to a tip of 5 mm as a seed crystal and having a tip roughness of 3 to 5 mm polished to a surface roughness Ra of 10 μm or less, an experiment was conducted in the same manner as in Example 1. went. Like GSGG seed crystal and YAG seed crystal, seeding succeeded at once.

"Evaluation"
As can be seen from the results in Table 3, in Examples 1 to 26, as seed crystals, the difference in lattice constant between GSGG and YAG (TGG) of 1750 ° C. or higher as the melting point of crystals that are not soluble in the TGG melt is ± 3% or less), the seeding succeeded at once and a high quality TGG crystal was obtained. In Example 27, as the seed crystal, a single crystal having a tapered shape and a surface within 5 mm from the tip finished to an arithmetic average roughness Ra of a specific value or less is used. In the lattice constant, the GGG seed crystal is a TGG single crystal. Since it is closest to the crystal, in the pulling step after seeding, the occurrence frequency of cracks due to lattice constant mismatch in the TGG single crystal can be further reduced.
On the other hand, in Comparative Examples 1 to 10, as is clear from the results of Table 2, since the same TGG as the crystal to be grown was used as the seed crystal, the seeding success rate was low, and the high-quality TGG crystal Could not get.

  According to the present invention, since a high-quality TGG crystal can be obtained, the present invention can be applied to the production of single crystals for optical use such as a small rotator and an optical isolator Faraday rotator having excellent characteristics.

a Production equipment b Insulating material c Raw material d Crucible e High-frequency heating coil f Seed crystal g Pulling shaft h Single crystal

Claims (4)

In a seeding method for growing a terbium gallium garnet (TGG) single crystal by bringing a seed crystal into contact with a raw material melt and pulling a grown crystal by the Cz method (rotary pulling method),
Seeding in TGG single crystal growth, characterized in that a single crystal having the same garnet structure as TGG, a melting point of 1750 ° C. or more and a difference in lattice constant from TGG of ± 3% or less is used as a seed crystal. Method.   The seeding method for growing a TGG single crystal according to claim 1, wherein any one selected from a YAG single crystal, a GGG single crystal, or a GSGG single crystal is used as a seed crystal.   3. The single crystal according to claim 1, wherein a single crystal having a tapered shape with a tip diameter of 3 mm or more and 5 mm or less as a seed crystal and having a surface within 5 mm from the tip finished with an arithmetic average roughness Ra of 10 μm or less is used. Seeding method for growing TGG single crystals.   2. The seeding method for TGG single crystal growth according to claim 1, wherein the inside of the furnace is an inert gas atmosphere containing 4% by volume or less of oxygen, and the gas flow rate is 1 to 5 L / min.

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