JP2013055099A - Temperature measuring wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature measuring wafer capable of measuring temperature of a wafer by a wireless method even in a substrate processing device in which process liquid is used.SOLUTION: On a lower surface of a base substrate 11 made of a silicon wafer, three crystal oscillators 1a, 1b, 1c, a printed circuit board 3 on which antennas 2a, 2b, 2c connected to these crystal oscillators 1a, 1b, 1c, respectively are arranged and installed, and a thin plate 21 made of a fluorine resin are laminated in this order. The base substrate 11 and the thin plate 21 made of the fluorine resin have a liquid-tight configuration at their peripheral edges by, for example, being pressed, heated and welded at a temperature of about 200°C.

Description

  The present invention relates to a temperature measuring wafer for measuring the temperature of a wafer processed in a substrate processing apparatus.

  For example, it is processed in a coater for applying a photoresist to a wafer such as a semiconductor substrate for manufacturing a semiconductor device or a glass substrate for manufacturing a liquid crystal device, or a developer for developing a photoresist. It is necessary to measure the temperature of the wafer. In some cases, it is necessary to measure the temperature of a processing solution such as a photoresist or a developer applied to the wafer via the temperature of the wafer. When performing such wafer temperature measurement, it is difficult to measure the temperature of a wafer that is actually being processed. For this reason, in general, a temperature sensor using a temperature detection member such as a platinum resistor or a thermocouple, or a temperature sensor using the resonance frequency of a crystal resonator is embedded in a temperature measurement wafer as a dummy wafer, and this temperature measurement is performed. The temperature of the wafer actually processed by the substrate processing apparatus for manufacturing the device is measured by installing the wafer for processing in the processing section of the substrate processing apparatus such as a heat processing apparatus and measuring the temperature of the temperature measuring wafer. I try to estimate.

  Patent Document 1 utilizes the fact that a crystal resonator has a natural frequency at which it stably oscillates, and that the natural frequency has a characteristic having a specific correlation with a temperature change, without using a lead wire. A method for measuring the temperature of a substrate that can measure the temperature of a wafer with high accuracy is disclosed. In this substrate temperature measuring method, a temperature measuring element formed by connecting a crystal resonator and a coil is disposed on a temperature measuring wafer, and a transmission wave having a frequency corresponding to the natural frequency of the crystal resonator is provided. Send to the temperature sensor. Then, a sensor coil that receives electromagnetic waves from the temperature measuring element is provided on the upper lid in the chamber, and after the transmission wave is stopped, the electromagnetic waves corresponding to the temperature of the temperature measuring wafer emitted by the damped vibration after the resonance of the quartz crystal are emitted. The temperature of the wafer for temperature measurement is received based on the frequency of the electromagnetic wave from the temperature measuring element.

  Patent Document 2 discloses a substrate heat treatment apparatus that can suppress an increase in the number of wirings. In this substrate heat treatment apparatus, temperature measuring elements formed by connecting a coil to a crystal resonator are installed at a plurality of locations on a temperature measuring wafer. A relay antenna is attached to the upper lid in the chamber, and a transmission / reception antenna is installed on the holding arm of the transfer robot. By transmitting a transmission wave having a frequency corresponding to the natural frequency of each crystal resonator from the transmission / reception antenna via the relay antenna, the corresponding crystal resonator is resonated, and the electromagnetic wave emitted from this crystal resonator is relayed to the relay antenna. The temperature of the wafer for temperature measurement is measured based on the frequency of the received electromagnetic wave and the frequency of the transmitted wave.

JP 2004-140167 A JP 2007-19155 A

  The temperature measurement methods described in Patent Document 1 and Patent Document 2 are excellent methods capable of measuring the temperature of a wafer in a wireless format, but are not considered for use in a substrate processing apparatus that uses a processing liquid. It was a thing. That is, the temperature measurement methods described in Patent Document 1 and Patent Document 2 can be used when used in a heat treatment apparatus that heat-treats a wafer, but when used in a substrate processing apparatus that uses a treatment liquid, When a quartz crystal unit or a coil portion using aluminum, chromium, lead or the like comes into contact with the processing liquid, they are corroded, and there is a problem that temperature measurement cannot be performed.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a temperature measuring wafer capable of measuring the temperature of a wafer by a wireless method even in a substrate processing apparatus using a processing liquid. And

  The invention according to claim 1 is a temperature measurement wafer that includes a base substrate, a crystal resonator, and an antenna connected to the crystal resonator, and transmits and receives data to and from the transmitting and receiving antenna. And the quartz resin and the antenna are surrounded in a liquid-tight state by the base substrate or the fluororesin.

  According to a second aspect of the present invention, in the first aspect of the present invention, a concave portion capable of accommodating the crystal resonator and the antenna is formed at a central portion thereof, and the base substrate is pressurized and heated at a peripheral portion thereof. It has a fluororesin thin plate to be welded.

  According to a third aspect of the present invention, in the first aspect of the present invention, the fluororesin that is heat-welded to the base substrate in a state where the crystal resonator and the antenna are accommodated between the base substrate. The sheet member is made.

  According to a fourth aspect of the present invention, in the first aspect of the invention, the crystal unit and the antenna are housed in a space formed between the first base substrate and the second base substrate. The first base substrate and the second base substrate were pressure-heat-welded with fluororesin at the peripheral portion thereof.

  According to a fifth aspect of the present invention, in the fourth aspect of the present invention, it can be recognized that the surface on the side opposite to the temperature measurement surface by the crystal unit is the surface opposite to the temperature measurement surface. An indication is formed.

  According to a sixth aspect of the present invention, in the first aspect of the present invention, a plurality of printed circuit boards on which the crystal unit and the antenna are mounted are surrounded in a liquid-tight state by the base substrate and the fluororesin. Is called.

  According to a seventh aspect of the present invention, in the invention according to any one of the first to sixth aspects, the concave portion that houses a part of the crystal resonator on the surface of the base substrate that contacts the crystal resonator. Is formed.

  The invention according to claim 8 is the invention according to any one of claims 1 to 7, wherein the base substrate is a silicon wafer, and the fluororesin is tetrafluoroethylene or trifluoroethylene chloride. is there.

  According to the first aspect of the present invention, even in a substrate processing apparatus that uses a processing solution, the temperature of the wafer can be measured by a wireless method.

  According to the second aspect of the present invention, by enclosing the crystal resonator and the antenna in the base substrate and the fluororesin thin plate, the shape of the temperature measuring wafer is similar to that of the wafer actually used in device manufacture or By using the same shape, more accurate temperature measurement is possible.

  According to the third aspect of the present invention, it is possible to ensure liquid tightness with a simple configuration.

  According to the fourth aspect of the present invention, more accurate temperature measurement is possible by making the appearance of the temperature measurement wafer similar or similar to the shape of the wafer actually used in device manufacture.

  According to the invention described in claim 5, it is possible to easily recognize the temperature measurement surface.

  According to the sixth aspect of the present invention, it is possible to reduce the manufacturing cost when the temperature measurement is performed at a plurality of locations by unitizing the crystal resonator and the antenna with the printed circuit board.

  According to the seventh aspect of the present invention, the temperature measurement accuracy can be improved by bringing the crystal resonator closer to the surface of the base substrate.

  According to the eighth aspect of the present invention, the base substrate and the fluororesin can be easily and reliably welded.

1 is a perspective view of a substrate processing apparatus using a temperature measuring wafer W according to the present invention. 2 is a block diagram showing a main control system of a substrate processing apparatus and a temperature measuring wafer W. FIG. 1 is a schematic diagram of a temperature measuring wafer W according to a first embodiment of the present invention. It is explanatory drawing which shows typically the relationship between the crystal oscillator 1a and the antenna 2a. It is a schematic diagram of temperature measuring wafer W according to a second embodiment of the present invention. It is a schematic diagram of the wafer W for temperature measurement which concerns on 3rd Embodiment of this invention. It is a schematic diagram of the wafer W for temperature measurement which concerns on 4th Embodiment of this invention. It is an external view of the wafer W for temperature measurement which concerns on 4th Embodiment of this invention. It is a schematic diagram of the wafer W for temperature measurement which concerns on 5th Embodiment of this invention. It is a schematic diagram of the wafer W for temperature measurement which concerns on 6th Embodiment of this invention. It is a schematic diagram of the wafer W for temperature measurement which concerns on 7th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, the configuration of a substrate processing apparatus using the temperature measuring wafer W according to the present invention will be described. FIG. 1 is a perspective view of a substrate processing apparatus using a temperature measuring wafer W according to the present invention.

  This substrate processing apparatus performs processing by applying or supplying a processing liquid to a semiconductor wafer such as a silicon wafer, and a spin chuck 61 on which a temperature measuring wafer W according to the present invention is placed and rotated. And a nozzle 64 for discharging the processing liquid to the temperature measurement wafer W rotated by the spin chuck 61, a scattering prevention cup 62, and a transmission / reception antenna 63. In this substrate processing apparatus, data relating to vibrations of the crystal resonators 1 a, 1 b, 1 c in the temperature measurement wafer W is transmitted and received between the antenna disposed in the temperature measurement wafer W and the transmission / reception antenna 63. Thus, the temperature of the temperature measuring wafer W is measured by a wireless method. In FIG. 1, the crystal resonators 1 a, 1 b, and 1 c originally disposed inside the temperature measurement wafer W are illustrated on the surface of the temperature measurement wafer W. A specific substrate processing apparatus is a coater for applying a resist solution to a semiconductor wafer, a developer for processing with a developer, a cleaning apparatus for processing with a cleaning liquid, or a stripping liquid for stripping the remaining resist. For example, a peeling device to be processed.

  FIG. 2 is a block diagram showing a main control system of the substrate processing apparatus and the temperature measuring wafer W described above.

  The temperature measurement wafer W is circular and includes three crystal resonators 1a, 1b, and 1c and antennas 2a, 2b, and 2c connected to the crystal resonators 1a, 1b, and 1c, respectively. . Quartz crystals used for the crystal resonators 1a, 1b, and 1c have different natural frequencies depending on the angle cut out from the crystals and have various temperature characteristics, and the so-called Ys cut one of them is a transmission / reception frequency with respect to temperature. The rate of change is large. Therefore, if a transmission wave having a frequency corresponding to the natural frequency is transmitted to the crystal resonators 1a, 1b, and 1c and the frequency of the electromagnetic wave received from the crystal resonator 1 is measured after the transmission is stopped, the transmission / reception frequency measured in advance. The temperature of the temperature measuring wafer W can be calculated based on the correlation between the change rate and the temperature. In addition, as these three crystal oscillators 1a, 1b, and 1c, those having different natural frequencies are used.

  On the other hand, the substrate processing apparatus includes a transmitter 71 for transmitting a transmission wave having a frequency corresponding to the natural frequency of each of the crystal resonators 1a, 1b, and 1c to the antennas 2a, 2b, and 2c via the transmission / reception antenna 63; A receiver 73 for receiving electrical signals corresponding to the damped vibrations of the crystal resonators 1a, 1b, 1c from the antennas 2a, 2b, 2c via the transmission / reception antenna 63; a frequency separator 72; a frequency counter 74; A temperature measuring device 75 and a changeover switch 76 are provided.

  In this substrate processing apparatus, first, the changeover switch 76 is switched to the transmitter 71 side, and the frequencies (f1, f2, f3) corresponding to the natural frequencies of the three crystal resonators 1a, 1b, 1c are transmitted from the transmitter 71. ) Are transmitted sequentially. This transmission wave is transmitted from the transmitting / receiving antenna 63 to the three crystal resonators 1a, 1b, 1c via the antennas 2a, 2b, 2c. Thereby, each crystal oscillator 1a, 1b, 1c resonates at each natural frequency.

  Subsequently, the transmission of the transmission wave from the transmitter 71 is stopped, and the changeover switch 76 is switched to the frequency classifier 72 side. After the transmission wave stops, each crystal resonator 1a, 1b, 1c oscillates at a frequency corresponding to the temperature of the temperature measuring wafer W. An electric signal corresponding to the damped vibration is transmitted from the antennas 2a, 2b, and 2c to the transmission / reception antenna 63. Then, the electrical signal corresponding to the damped vibration is sent from the transmitting / receiving antenna 63 to the frequency separator 72. The frequency discriminator 72 and the receiver 73 sequentially receive signals in a predetermined band centered on the frequency corresponding to the damped vibration. Then, the frequency counter 74 counts the frequency of this signal for each crystal resonator 1a, 1b, 1c. On the other hand, in the temperature measuring device 75, the frequency counted by the frequency counter is compared with the frequency versus temperature characteristic of each crystal resonator that has been measured in advance, so that each crystal resonator 1a in the temperature measuring wafer W is measured. The temperature of the position corresponding to 1b and 1c is obtained.

  Next, the configuration of the temperature measuring wafer W according to the present invention will be described. FIG. 3 is a schematic view of the temperature measuring wafer W according to the first embodiment of the present invention. FIG. 3A is a schematic view showing a plane of the temperature measuring wafer W, but also includes crystal resonators 1a, 1b, 1c and antennas 2a, 2b, 2c arranged on the lower surface side of the base substrate 11. It is shown. FIG. 3B is a schematic diagram showing a cross section of the temperature measuring wafer W.

  This temperature measurement wafer W is the same as a circular semiconductor wafer used for device manufacture or is thinned by polishing it, and is formed on the lower surface of a base substrate 11 made of, for example, a silicon wafer. A printed circuit board 3 on which crystal resonators 1a, 1b and 1c and antennas 2a, 2b and 2c connected to the crystal resonators 1a, 1b and 1c, respectively, and a thin plate 21 made of a fluororesin are provided. It has the structure laminated | stacked in order. The base substrate 11 and the fluororesin thin plate 21 have a melting point of the fluororesin or a temperature several to several tens of degrees higher than the melting point of the fluororesin, depending on the fluororesin used. To 350 degrees), the crystal resonators 1a, 1b, 1c and the antennas 2a, 2b, 2c are surrounded in a liquid-tight state. The crystal resonators 1a, 1b, and 1c are installed at locations where it is desired to measure the wafer temperature.

  Here, “liquid-tight” means sealing (sealing) in a state where liquid does not pass through. Surrounding the crystal resonators 1a, 1b, and 1c and the antennas 2a, 2b, and 2c in a liquid-tight state means that when the processing liquid is supplied to the temperature measuring wafer W, the processing liquid is moved to the temperature measuring wafer W. Is surrounded by the crystal resonators 1a, 1b, 1c and the antennas 2a, 2b, 2c so as not to enter.

  FIG. 4 is an explanatory diagram schematically showing the relationship between the crystal resonator 1a and the antenna 2a.

  The antenna 2a connected to the crystal unit 1a has a circular coil shape in which a conducting wire is wound several turns. Such a configuration is the same for the other antennas 2b and 2c except that the diameters of the circles are different.

  Referring to FIG. 3 again, the fluororesin thin plate 21 is a thin plate of about 0.5 mm to 3 mm made of tetrafluoroethylene (polytetrafluoroethylene) or trifluoroethylene chloride (polychlorotrifluoroethylene). On the other hand, the crystal resonators 1a, 1b, and 1c, the antennas 2a, 2b, and 2c and the concave portion that can accommodate the printed circuit board 3 are formed. For this reason, the base substrate 11 and the fluororesin thin plate 21 are welded at the periphery of the contact portion of the entire circumference thereof, thereby measuring the temperature of a shape substantially similar to that of a normal silicon wafer used for manufacturing a semiconductor device. It becomes possible to produce the wafer W for an operation. In addition, it is desirable to make the thickness of the temperature measurement wafer W on which the thin plates 21 are laminated substantially the same as the thickness of the wafer actually used for device manufacture by reducing the thickness of the base substrate 11.

  In addition, the base substrate 11 made of a silicon wafer is formed with a recess for storing a part of the crystal resonators 1a, 1b, 1c by sandblasting or the like. Therefore, the distance between the crystal resonators 1a, 1b, and 1c and the surface of the base substrate 11 can be reduced, and the temperature measurement accuracy is improved by bringing the crystal resonators 1a, 1b, and 1c closer to the surface of the base substrate 11. It becomes possible to improve.

  At this time, the silicon wafer and ethylene tetrafluoride or trifluorochloroethylene as the fluororesin have extremely good weldability by pressure heating, and a liquid-tight structure can be easily configured. In addition, fluororesin such as tetrafluoroethylene or trifluoroethylene chloride is a material with excellent chemical resistance, so it is a material that is usually used for parts that come into contact with the processing liquid in a silicon substrate processing apparatus. Since adhesion can be performed without using an adhesive, it is possible to prevent so-called contamination such as impurities adhering to a semiconductor device. For this reason, by using the base substrate 11 made of a silicon wafer and the thin plate 21 made of a fluororesin such as tetrafluoroethylene or ethylene trifluoride, it is suitable for temperature measurement even in a substrate processing apparatus using a processing liquid. The wafer W can be created.

  Next, another embodiment of the temperature measuring wafer W according to the present invention will be described. FIG. 5 is a schematic view of a temperature measuring wafer W according to the second embodiment of the present invention. FIG. 5A is a schematic view showing a plane of the temperature measuring wafer W, but also includes crystal resonators 1a, 1b, 1c and antennas 2a, 2b, 2c arranged on the lower surface side of the base substrate 11. It is shown. FIG. 5B is a schematic diagram showing a cross section of the temperature measuring wafer W.

  The temperature measurement wafer W according to the second embodiment has a configuration in which a fluororesin sheet member 22 is employed in place of the fluororesin thin plate 21 in the temperature measurement wafer W according to the first embodiment. That is, the temperature measuring wafer W is provided on the lower surface of a base substrate 11 made of a silicon wafer, with three crystal resonators 1a, 1b and 1c, and an antenna 2a connected to each of these crystal resonators 1a, 1b and 1c. The printed circuit board 3 on which 2b and 2c are disposed and the sheet member 22 made of fluororesin are stacked in this order. The base substrate 11 and the fluororesin sheet member 22 are in a liquid-tight state by being heated and welded at a temperature equal to or higher than the melting point of the fluororesin at the periphery of the contact portion of the entire circumference thereof. In this configuration, the quartz resonators 1a, 1b, and 1c and the antennas 2a, 2b, and 2c are enclosed. In addition, the code | symbol 31 in FIG.5 (b) has shown the spacer.

  In this embodiment as well, the base substrate 11 made of a silicon wafer is formed with recesses for accommodating a part of the crystal resonators 1a, 1b, 1c by sandblasting or the like. In this embodiment, a fluororesin sheet member 23 is also interposed between the crystal resonators 1 a, 1 b, 1 c and the antennas 2 a, 2 b, 2 c and the base substrate 11. As the material of the sheet members 22 and 23, tetrafluoroethylene or trifluoroethylene chloride is used.

  Next, still another embodiment of the temperature measuring wafer W according to the present invention will be described. FIG. 6 is a schematic view of a temperature measuring wafer W according to the third embodiment of the present invention. FIG. 6A is a schematic diagram showing a plane of the temperature measuring wafer W, but shows a state in which the fluororesin sheet member 24 is removed and viewed. FIG. 6B is a schematic diagram showing a cross section of the wafer W for temperature measurement.

  The temperature measurement wafer W according to the third embodiment is provided with crystal resonators 1a, 1b, and 1c and antennas 2a, 2b, and 2c with respect to the temperature measurement wafer W according to the second embodiment. The arrangement of the printed circuit board 3 is upside down. That is, the temperature measuring wafer W is formed on the upper surface of the base substrate 11 made of a silicon wafer, and the three crystal resonators 1a, 1b, and 1c and the antenna 2a connected to the crystal resonators 1a, 1b, and 1c, respectively. The printed circuit board 3 on which 2b and 2c are disposed and the sheet member 24 made of fluororesin are stacked in this order. The base substrate 11 and the fluororesin sheet member 24 are in a liquid-tight state by being heated and welded at a temperature equal to or higher than the melting point of the fluororesin at the periphery of the contact portion of the entire circumference thereof. In this configuration, the quartz resonators 1a, 1b, and 1c and the antennas 2a, 2b, and 2c are enclosed. As the material of the sheet member 24, tetrafluoroethylene or trifluoroethylene chloride is used.

  Next, still another embodiment of the temperature measuring wafer W according to the present invention will be described. FIG. 7 is a schematic view of a temperature measuring wafer W according to the fourth embodiment of the present invention. FIG. 7A is a schematic diagram showing a plane of the temperature measuring wafer W, but shows a state in which the first base substrate 12 is removed. FIG. 7B is a schematic diagram showing a cross section of the wafer W for temperature measurement.

  The temperature measuring wafer W according to the fourth embodiment has a first base substrate 12 and a second base substrate 13 each made of a silicon wafer. A recess is formed in the second base substrate 13 by sandblasting or the like, and there are three in the space formed between the first base substrate 12 and the second base substrate 13 by the recess. And the printed circuit board 3 on which the antennas 2a, 2b, and 2c connected to the crystal resonators 1a, 1b, and 1c, respectively, are disposed. And the 1st base substrate 12 and the 2nd base substrate 13 are the same as or higher than the melting | fusing point of a fluororesin using the sheet | seat member 25 which consists of a fluororesin in the peripheral part of the perimeter. By welding under pressure and heat, the crystal resonators 1a, 1b, 1c and the antennas 2a, 2b, 2c are surrounded in a liquid-tight state. As the material of the sheet member 25, tetrafluoroethylene or trifluoroethylene chloride is used. In addition, the code | symbol 32 in FIG. 7 has shown the spacer.

  FIG. 8 is an external view of a temperature measuring wafer W according to the fourth embodiment of the present invention. Here, FIG. 8A is a perspective view of the temperature measuring wafer W, and FIG. 8B is a rear view thereof.

  The entire surface of the temperature measuring wafer W according to the fourth embodiment is covered with a first base substrate 12 and a second base substrate 13 made of a silicon wafer. For this reason, it is impossible to recognize the front and back from the appearance. On the other hand, in the temperature measurement wafer W, one of its main surfaces is a temperature measurement surface for measuring temperature according to the orientation of the crystal resonators 1a, 1b, and 1c, and is opposite to the temperature measurement surface. On the other hand, accurate temperature measurement cannot be performed. In the case of this embodiment, the surface of the first base substrate 12 is a temperature measurement surface, and the surface of the second base substrate 13 on the side where the printed circuit board 3 is arranged is a temperature measurement surface. Not.

  For this reason, in the temperature measurement wafer W according to the fourth embodiment, the surface is opposite to the temperature measurement surface by the crystal resonators 1a, 1b, and 1c, and is opposite to the temperature measurement surface. The indication “BACK” 10 can be recognized by engraving. With this display 10, it is possible to effectively prevent wrong installation of the front and back when performing temperature measurement using the temperature measurement wafer W.

  At this time, it is possible to form a display on the temperature measurement surface side so that the temperature measurement surface can be recognized, but in order not to reduce the measurement accuracy on the temperature measurement surface, It is preferable to form a display capable of recognizing that it is a surface opposite to the temperature measurement surface on a surface opposite to the temperature measurement surface, rather than forming a display capable of recognizing that.

  Next, still another embodiment of the temperature measuring wafer W according to the present invention will be described. FIG. 9 is a schematic view of a temperature measuring wafer W according to the fifth embodiment of the present invention. FIG. 9A is a schematic diagram showing a plane of the temperature measuring wafer W, and shows a state viewed with the first base substrate 12 removed. FIG. 9B is a schematic diagram showing a cross section of the wafer W for temperature measurement.

  In each of the above-described embodiments, the antennas 2a, 2b, and 2c connected to the crystal resonators 1a, 1b, and 1c are arranged concentrically, so that the three crystal resonators 1a, 1b, and 1c and the three antennas are arranged. 2a, 2b and 2c are arranged on a single printed circuit board 3. On the other hand, in the temperature measurement wafer W according to the fifth embodiment, first, a temperature measurement unit 41a in which the crystal resonator 1a and the antenna 2a are arranged on the printed circuit board 3 one by one. Similarly, the crystal resonator 1b and the antenna 2b, or the crystal resonator 1c and the antenna 2c, respectively, produce temperature measuring units 41b and 41c arranged on separate printed boards 3, respectively.

  These three temperature measuring units 41a, 41b, 41c are arranged in a recess formed by sandblasting or the like on the second base substrate 13 made of a silicon wafer. On the other hand, the first base substrate 12 made of a silicon wafer is formed with a recess for storing a part of the crystal resonators 1a, 1b, 1c by sandblasting or the like. For this reason, the first base substrate 12 and the second base substrate 13 are pressure-heat-welded, for example, at a temperature of about 200 degrees Celsius by using a sheet member 25 made of a fluororesin, so that the first As in the case of the fifth embodiment, a liquid-tight temperature measuring wafer W having a shape similar or similar to that of a normal silicon wafer can be configured. In addition, manufacturing cost can be reduced by unitizing a temperature measurement part.

  The sheet member 25 is also made of tetrafluoroethylene or trifluoroethylene chloride. Also in the temperature measurement wafer W according to the fifth embodiment, as in the case of the fourth embodiment, as shown in FIG. 8, the temperature measurement surface of the quartz resonators 1a, 1b, and 1c is opposite to the temperature measurement surface. On the surface, a display 10 “BACK” is formed so that the surface can be recognized as the surface opposite to the temperature measurement surface.

  Next, still another embodiment of the temperature measuring wafer W according to the present invention will be described. FIG. 10 is a schematic view of a temperature measuring wafer W according to the sixth embodiment of the present invention. FIG. 10A is a schematic view showing a plane of the temperature measuring wafer W, but shows a state when the sheet member 26 is removed. FIG. 10B is a schematic diagram showing a cross section of the wafer W for temperature measurement.

  In the sixth embodiment, the temperature measurement units 42a, 42b, and 42c are formed by covering the entire outer periphery of the temperature measurement unit unitized in the fifth embodiment with a sheet member 26 made of fluororesin. The three temperature measuring units 42a, 42b, and 42c covered by the sheet member 26 are disposed in a recess formed by sandblasting or the like on the base substrate 14 made of a silicon wafer, and in the recess, for example, 200 degrees Celsius. It is heat-welded under pressure at a certain temperature. The sheet member 26 is also made of tetrafluoroethylene or trifluoroethylene chloride.

  Next, still another embodiment of the temperature measuring wafer W according to the present invention will be described. FIG. 11 is a schematic view of a temperature measuring wafer W according to the seventh embodiment of the present invention. FIG. 11A is a schematic view showing a plane of the temperature measuring wafer W, but also includes crystal resonators 1a, 1b, 1c and antennas 2a, 2b, 2c arranged on the lower surface side of the base substrate 15. It is shown. FIG. 11B is a schematic diagram showing a cross section of the wafer W for temperature measurement.

  In the seventh embodiment, the same three temperature measuring units 41a, 41b, 41c as those in the fifth embodiment are arranged on the lower surface side of the base substrate 15 made of a silicon wafer, and the outer peripheral portion is made of a fluororesin. The structure is covered with a sheet member 27. The base substrate 15 and the sheet member 27 are pressure-heat-welded at a temperature equal to or higher than the melting point of the fluororesin.

  In this embodiment as well, the base substrate 15 made of a silicon wafer is formed with recesses for accommodating a part of the crystal resonators 1a, 1b, 1c by sandblasting or the like. Also in this embodiment, a fluororesin sheet member 28 is interposed between the crystal resonators 1 a, 1 b, 1 c and the antennas 2 a, 2 b, 2 c and the base substrate 15. Also in this embodiment, the material of the sheet members 27 and 28 is tetrafluoroethylene or trifluoroethylene chloride.

  In any of the embodiments described above, it is desirable that the temperature measurement wafer be as similar as possible to the substrate (wafer) used for manufacturing the semiconductor device in terms of shape, thickness, and material. For example, in the embodiment described above, a silicon wafer is used as the base substrate 11, 12, 13, 14, 15. However, a wafer or substrate used for manufacturing a semiconductor device or a liquid crystal device is used. It is desirable to use the same material. In the above-described embodiments, the three crystal resonators 1a, 1b, and 1c and the three antennas 2a, 2b, and 2c are used. One may be sufficient and three or more may be sufficient. The heating temperature at which the fluororesin is pressure-welded to the base substrate is about 210 to 220 degrees in the case of the trifluoride resin PTCFE (polychlorofluoroethylene) because the melting point is 210 to 220 degrees. A temperature of 240 degrees is appropriate, and in the case of a tetrafluororesin PTFE (polytetrafluoroethylene), a melting point of 327 degrees is appropriate, and about 327 degrees to 347 degrees is appropriate. As for the pressing force, 1 to 20 g per square centimeter is appropriate. In addition, these heating temperature is adjusted with a pressurizing force and pressurization heating time. The thickness of the sheet members 22 to 27 is 0.1 mm to 1 mm.

DESCRIPTION OF SYMBOLS 1a Crystal oscillator 1b Crystal oscillator 1c Crystal oscillator 2a Antenna 2b Antenna 2c Antenna 3 Printed circuit board 10 Display 11 Base board 12 1st base board 13 2nd base board 14 Base board 15 Base board 21 Thin plate 22 Sheet member 23 Sheet member 24 Sheet member 25 Sheet member 26 Sheet member 27 Sheet member 31 Spacer 32 Spacer 63 Transmission / reception antenna

Claims (8)

In a temperature measurement wafer comprising a base substrate, a crystal resonator, and an antenna connected to the crystal resonator, and transmitting and receiving data to and from the transmitting and receiving antenna,
A temperature measurement wafer characterized in that the crystal substrate and the antenna are surrounded in a liquid-tight state by the base substrate or the fluororesin by pressurizing and heating the base substrate and fluororesin. The temperature measurement wafer according to claim 1,
A temperature measuring wafer having a concave portion capable of accommodating the crystal resonator and the antenna at a central portion thereof, and having a fluororesin thin plate pressurized and heated to the base substrate at a peripheral portion thereof. The temperature measurement wafer according to claim 1,
A temperature measurement wafer having a fluororesin sheet member that is heat-welded to the base substrate in a state where the crystal resonator and the antenna are housed between the base substrate and the base substrate. The temperature measurement wafer according to claim 1,
The quartz crystal unit and the antenna are housed in a space formed between the first base substrate and the second base substrate, and the first base substrate and the second base substrate are placed between them. A temperature measuring wafer welded under pressure and heat with a fluororesin at the periphery. The temperature measurement wafer according to claim 4,
A temperature measurement wafer in which a display capable of recognizing the surface opposite to the temperature measurement surface is formed on a surface opposite to the temperature measurement surface by the crystal resonator. The temperature measurement wafer according to claim 1,
A temperature measurement wafer in which a plurality of printed circuit boards on which the crystal resonator and the antenna are mounted are surrounded in a liquid-tight state by the base substrate and the fluororesin. In the temperature measurement wafer according to any one of claims 1 to 6,
A temperature measurement wafer in which a concave portion for accommodating a part of the crystal resonator is formed on a surface of the base substrate that contacts the crystal resonator. In the temperature measurement wafer according to any one of claims 1 to 7,
The base substrate is a silicon wafer;
The temperature measurement wafer, wherein the fluororesin is tetrafluoroethylene or trifluoroethylene chloride.

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