JP2013044047A - Vacuum film formation device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve productivity by performing film formation uniformly at a time to a number of substrates even when film formation conditions are different.SOLUTION: An AIP apparatus 101 includes: an evacuation unit for evacuating the inside of a vacuum chamber; four rotating holders 4 each holding, in a rotating state, a substrate on which a film is to be formed; a revolving table 5 for allowing the rotating holders 4 to revolve around the revolution axis Q that is parallel to the axial center of the rotation axis of each holder 4; an arc evaporation source 6; and a power supply unit 10B provided with four bias power supplies 10B1 to 10B4. Each of the rotating holders 4 is connected to a different bias power supply through a slip ring 151, and thereby, different film formation conditions are constituted by the difference of the bias potential.

Description

  The present invention relates to a vacuum film formation method (ion plating (including AIP method), sputtering method, plasma CVD method, and the like for forming a thin film on the surface of a substrate by applying a voltage to a large number of substrates in a vacuum state. The vacuum film-forming apparatus which implement | achieves the combination of these is included.

  Since the 1980s, for the purpose of improving the life of cutting tools, a hard film such as TiN or TiAlN has been formed on a substrate by a vacuum film-forming method such as AIP (Arc Ion Plating) method or sputtering method. . Also, in recent years, CrN and DLC (Diamond-Like-Carbon), etc. have been applied to metal mechanical parts such as piston rings and automobile engine parts in order to improve the surface wear resistance and seizure resistance. Mass production of wear-resistant coatings is actively performed.

As such a vacuum film-forming apparatus, on the table which revolves the base material for the purpose of processing a large amount of base material (parts) with high uniformity at once (using a jig or the like if necessary). A device that is mounted and forms a film while applying a voltage to the substrate for the purpose of generating plasma or adjusting the film quality is known.
For example, in Japanese Patent Application Laid-Open No. 2004-323883 (Patent Document 1), in a vacuum chamber, a planetary holder (table) that holds a plurality of substrates and a position that faces the substrate holder are provided. Disclosed is a physical vapor deposition apparatus comprising an arranged sputter evaporation source and a bias power source connected to the substrate holder and capable of applying a negative pulsed bias voltage to the substrate holder. Patent document 1 discloses disposing an arc evaporation source at a position facing the substrate holder. There is one bias power source applied to the substrate holder, and the same voltage is applied to each axis rotating on the planet.

  Japanese Laid-Open Patent Publication No. 6-340968 (Patent Document 2) discloses that a cylindrical arc evaporation source of the AIP method is placed at the center of a chamber, and a base material mounted on a rotation table surrounds the cylindrical arc evaporation source. Disclosed is an AIP apparatus configured to deposit vapor evaporated from a source from the inside toward the outside. The arc evaporation source is connected to the negative pole of the arc power source. In this AIP apparatus, an arc spot is generated on the surface of the cylindrical evaporation source to evaporate the film source material. The arc evaporation source requires an anode that operates as a pair. However, since the substrate mounted on the revolution table surrounds the evaporation source, in this AIP apparatus, the periphery of the evaporation source is an anode that operates effectively. In addition, a plurality of rod-like anodes or ring-like anodes are arranged near both ends of the cylindrical evaporation source.

  Furthermore, Japanese Patent Application Laid-Open No. 2007-308758 (Patent Document 3) discloses a plasma generating means for generating plasma in a vacuum chamber in which a base material to be deposited is placed, and a plasma generated by the plasma generating means as a base material. A film forming apparatus having a multicusp magnetic field generating means for forming a multicusp magnetic field confined in a confined space around the substrate and a holding rotating means for holding the substrate and rotating around the center of the confined space as a central axis is disclosed. In this film forming apparatus, a base material is placed on a table that revolves and revolves, a bias voltage is applied from a power source through the table, and plasma is generated around the base material to form a film. The multicusp magnetic field generating means improves the confinement of the generated plasma.

JP 2004-323883 A JP-A-6-340968 JP 2007-308758 A

However, the techniques disclosed in the above-described patent documents have the following problems.
In the physical vapor deposition apparatus disclosed in Patent Document 1, film formation is performed by applying the same voltage to all the substrates on the revolution table. For this reason, in one process, the base material on the self-revolving table is coated in principle under the same conditions. When the same film quality is required for all the substrates to be processed, and when the same amount of substrates is mounted on all table shafts, there is no problem in such operations. . However, in recent years, as the need for production of various types of small lots has increased, the number of coating treatments under the same conditions has decreased, and the opportunity for film formation processing with the substrate fully loaded in the film formation apparatus has decreased. , Causing a decline in productivity.

  Further, in the AIP apparatus disclosed in Patent Document 2, a cylindrical arc evaporation source of the AIP method is placed at the center of the chamber, and a base material mounted on a self-revolving table is arranged so as to surround it. Film formation is performed by applying the same negative voltage to all the substrates. A negative pole of an arc power source is connected to the arc evaporation source, an arc spot is generated on the surface of the cylindrical arc evaporation source, and the film raw material is evaporated. An arc evaporation source requires a pair of anodes to operate. However, since the substrate mounted on the revolution table surrounds the cylindrical arc evaporation source, (1) a cylindrical shape as an effective anode A plurality of rod-like anodes are arranged around the arc evaporation source, or (2) ring-like anodes are arranged near both ends of the cylindrical arc evaporation source. The anode of (1) captures vapor evaporated from the cylindrical arc evaporation source and prevents it from traveling toward the substrate, thereby causing a decrease in film formation rate, that is, a decrease in productivity. Further, the trapped vapor is deposited on the anode and eventually peels off and causes a film defect. Therefore, it is necessary to frequently clean the anode, resulting in a decrease in productivity. The anode of (2) does not capture vapor like the anode of (1), but when the length of the cylindrical arc evaporation source is long, the arc discharge spot is near the center of the cylindrical arc evaporation source. It is not easy to control and is not practical. For this reason, the actual apparatus has the configuration (1), causing a reduction in productivity.

  Further, when a film such as DLC is coated by the film forming apparatus disclosed in Patent Document 3, the coating film adheres to the inner wall of the chamber other than the film formation target substrate (including the substrate holder), the plasma generation mechanism, and the like. Since the DLC film is an insulating film, the plasma generation state fluctuates by this, and long-term stable operation is impaired. That is, in this film forming apparatus, plasma is generated by applying a bias voltage to the substrate with respect to the chamber. The film is deposited on the substrate and at the same time, it is deposited in various places in the vacuum chamber. When the film is an insulating film such as DLC, the conductivity of the substrate surface is gradually lost due to the film deposited on the surface of the substrate as the film formation progresses and the film thickness increases. However, since the base material is replaced with a new one having a conductive surface when the film forming process is completed, the film does not continue to be deposited and the conductivity of the base material surface is not completely lost. However, the coating also adheres to portions other than the substrate to be deposited, for example, the inner wall of the vacuum chamber. Since the inner wall of the vacuum chamber is not changed every time unlike the base material, the insulating film deposited on the vacuum chamber side is deposited thicker as the film formation is continued many times. As the film thickness of the deposited film increases, the electrical resistance of the chamber inner wall increases, the generation of plasma generated using the inner wall as one electrode becomes unstable, and the operating conditions are optimal. There is a possibility of deviation from the conditions. For this reason, an unstable behavior appears during long-time operation for forming a thick film on the substrate side. Further, even if the process is not affected by one batch of processing, a phenomenon that the plasma becomes unstable as the operation is repeated occurs, so that cleaning of the inside of the chamber or the like is frequently required. For this reason, productivity is reduced.

  The present invention has been made in view of the above-described problems, and improves productivity by performing film formation on a large number of substrates at once and uniformly even when the film formation conditions are different. It is an object of the present invention to provide a vacuum film forming apparatus capable of performing the above.

In order to solve the above problems, the vacuum film forming apparatus of the present invention employs the following technical means.
That is, the vacuum film forming apparatus of the present invention includes a vacuum chamber, a vacuum exhaust means for evacuating the inside of the vacuum chamber, a plurality of rotation holding units that hold the substrate to be formed in a rotating state, A revolving mechanism for revolving a plurality of rotation holding portions around a rotation axis parallel to the rotation axis of the rotation holding portion, and coating the base material held by the rotation holding portion in the vacuum chamber Form. In this vacuum film forming apparatus, the plurality of rotation holding units are divided into a plurality of groups, and different potentials are supplied to the respective groups. Here, different potentials are a generic term for different applied voltages and different applied voltage waveforms (whether or not pulsed, shape, frequency).

In the first aspect of the present invention, a different potential is preferably supplied from a bias power source for each group. Preferably, it is preferable to be able to supply the substrate with plasma irradiation for substrate processing, or vapor of a film from an AIP evaporation source, a sputter evaporation source, or another evaporation source.
In the second aspect of the present invention, it is preferable that the vacuum film forming apparatus further includes an evaporation source, and the evaporation source power supply supplies power to the evaporation source so that the evaporation source becomes a cathode. A bias power source for supplying a bias voltage to the substrate, wherein the plurality of rotation holding units are divided into at least two groups, each group being connected to the positive electrode of the evaporation source power source, and a bias power source It is preferable to repeat the state of being connected to each other in time and to maintain at least one group operating as the anode of the evaporation source. As an example, the plurality of rotation holding units are divided into a first group and a second group, and the plurality of rotation holding units supply power from the positive electrode of the evaporation source power source to the first group. And a first state in which a negative bias voltage is supplied from the bias power source to the second group, and a bias voltage is supplied from the bias power source to the first group and to the second group. It is preferable that the second state in which power is supplied from the positive electrode of the evaporation source power supply be alternately and temporally repeated to supply power.

Preferably, when the time required to form a 100 nm film on the substrate during the film forming process is t (sec), the switching period T (sec) between the first state and the second state. ) Preferably satisfies t>T> 1 msec.
Preferably, when there is only one group connected to the positive electrode of the evaporation source power source, before switching the group connection, another group is connected to the positive electrode of the evaporation source power source, It is preferable to provide a state in which power is supplied from the positive electrode of the power source.

Preferably, the bias voltage is changed with time.
According to a third aspect of the present invention, plasma is generated in the gas supplied into the vacuum chamber by a voltage applied to the rotation holding unit, and each group of the rotation holding unit has a negative potential and glow discharge. It is preferable that the state that operates as the working electrode that plays a main role in plasma generation and the state that operates as the counter electrode are alternately repeated in time. In particular, it comprises a plasma generation power source for generating plasma in the source gas supplied into the vacuum chamber, and the plurality of rotation holding parts are connected to one electrode of the plasma generation power source, It may be divided into any one of the second group connected to the other electrode of the plasma generating power source.
Preferably, the revolution mechanism includes a revolution table that is capable of revolution about the revolution axis, and each of the plurality of rotation holding portions has an equal radius from the revolution axis of the revolution table and around the revolution axis. It is good to be deployed so that they are equally spaced.

Preferably, the rotation holding portions belonging to the first group and the rotation holding portions belonging to the second group are the same number, and are arranged in an alternating manner around the revolution axis one by one. good.
Preferably, the number of rotation holding parts belonging to the first group and the number of rotation holding parts belonging to the second group are the same, and two are arranged in an alternating manner around the revolution axis. good.

  By using the vacuum film formation apparatus of the present invention, productivity can be improved by performing film formation on a large number of substrates at once and uniformly.

It is a perspective view of the vacuum film-forming apparatus (AIP apparatus carrying an arc evaporation source) concerning a 1st embodiment of the present invention. It is the figure which showed the example of installation of the base material to a rotation holding | maintenance part. It is a schematic diagram of the cross section of the rotation drive part vicinity in the vacuum film-forming apparatus of FIG. It is a figure which shows the example of a power supply connection of the vacuum film-forming apparatus of FIG. It is a figure which shows the power connection example of the vacuum film-forming apparatus (AIP apparatus carrying a cylindrical arc evaporation source) which concerns on 2nd Embodiment of this invention. 6 is a timing chart of power connection in the vacuum film forming apparatus of FIG. 5. It is a perspective view of the vacuum film-forming apparatus (plasma CVD apparatus) which concerns on 3rd Embodiment of this invention. It is a figure which shows the example of a power supply connection of the vacuum film-forming apparatus of FIG.

Hereinafter, embodiments of a vacuum film forming apparatus according to the present invention will be described in detail with reference to the drawings. In the following description, the same parts are denoted by the same reference numerals even in different embodiments. Their names and functions are also the same. Therefore, detailed description thereof will not be repeated.
<First Embodiment>
[overall structure]
FIG. 1 shows an overall configuration of an AIP apparatus (arc ion plating apparatus) 101 which is an example of a vacuum film forming apparatus of the present invention.

  The AIP apparatus 101 includes a vacuum chamber 2, vacuum evacuation means 3 for evacuating the inside of the vacuum chamber 2, and a plurality of rotation holding units 4 for holding the substrate W that is a film formation target in a rotating state. doing. The plurality of rotation holding units 4 are arranged on a revolution table 5, and the revolution table 5 provided with a plurality of rotation holding units 4 in this AIP device 101 is connected to the rotation axis (spinning axis P) of the rotation holding unit 4. A revolution mechanism 8 that revolves around a revolution axis Q parallel to the axis is provided.

In the present invention, “the substrate W rotates” means that the substrate W rotates (spins) around an axis P that penetrates the substrate W. Further, “the substrate W revolves” means that the substrate W rotates around the axis Q away from itself, in other words, the substrate W rotates around the axis Q.
The AIP device 101 described above includes an evaporation source 6 (here, an arc evaporation source), which will be described later, in the vacuum chamber 2, and a power supply unit 10A that supplies bias voltages having different potentials to the rotation holding unit 4. A film is formed on the base material W held by the rotation holding unit 4 using the AIP method.

The configuration of the AIP device 101 described above will be described in more detail.
The vacuum chamber 2 is a housing whose inside can be hermetically sealed with respect to the outside. A vacuum pump 3 (vacuum exhausting means) for exhausting the gas in the vacuum chamber 2 to the outside and bringing the inside of the chamber into a low pressure state (vacuum state) is provided on the side of the vacuum chamber 2. 3, the inside of the vacuum chamber 2 can be depressurized to a vacuum state. A plurality of base materials W are accommodated in the vacuum chamber 2 in a state where they are respectively held by a rotation holding portion 4 described later.

The base material W formed by the AIP apparatus 101 of the first embodiment may be disposed in a vertically long cylindrical space in order to enable uniform film formation.
For example, when the base material W is a piston ring as shown in FIG. 2 (a), the base material W is preferably installed so as to be stacked in a substantially cylindrical shape as shown in FIG. 2 (a). Preferably, even if stacked, a part that does not become a complete cylinder due to lack of a part in the circumferential direction is covered with the cover 11 as necessary, so that uniform film formation is possible.

  When the base material W to be formed is a small member (for example, a small piston pin) as shown in FIG. 2B, an installation jig 13 in which the disks 12 are stacked in multiple stages in the vertical direction is prepared. The base material W may be provided on each disk 12. And this installation jig | tool 13 should just be settled in cylindrical space. The substrate mounting form as shown in FIG. 2B is also applicable to a shaft tool such as a drill or an end mill. More preferably, the jig can be configured such that each base member rotates individually in a mounted state.

Furthermore, even when the base material W is a shape other than the above, a fixing jig may be appropriately manufactured so that the jig and the base material can be accommodated in the cylindrical space.
The rotation holding unit 4 is, for example, a circular mounting table whose upper surface is horizontal. The rotation holding portion 4 is rotatable about a rotation axis that faces in the vertical direction, and can hold the base material W disposed on the upper surface or above while rotating about the rotation axis. The rotation holding unit 4 can be supplied with power, and the supplied voltage is also applied to the substrate W.

In the case of the AIP device 101 shown in FIG. 1, four rotation holding units 4 are provided in total. These four rotation holding portions 4 are arranged in an upright state on the upper surface of the revolution table 5 so as to be arranged on one circle in a plan view.
The center axis (revolution axis Q) of the revolution table 5 faces in the vertical direction, and the revolution table 5 rotates around this axis. As described above, a plurality (four) of rotation holding portions 4 are provided on the upper surface of the revolution table 5 so as to have an equal distance (radius) from the revolution axis Q of the revolution table 5 and around the revolution axis Q (circumferential direction). It is deployed at regular intervals. A revolution mechanism 8 that rotates the revolution table 5 about the revolution axis Q is provided below the revolution table 5.

  The revolution mechanism 8 has a shaft portion 14 that extends downward along the revolution axis Q from the lower surface of the revolution table 5, and a rotation drive portion 15 that drives and rotates the shaft portion 14. When the revolution table 5 is rotated around the revolution axis Q using the revolution mechanism 8 in this way, the rotation holding portion 4 holding the base material W revolves around the revolution axis Q. At the same time, since the rotation holding unit 4 is configured to rotate around its axis, the base material W held by the rotation holding unit 4 rotates.

With such a mechanism, it is possible to form a film on the base material W while revolving the whole rotation holding part 4 in the vacuum chamber 2 (while revolving).
Adjacent substrates are properly installed so as not to interfere with each other during self-revolution by taking into account the rotational phase or adjusting the size of adjacent substrates.
By the way, in the AIP device 101 of the present invention, bias voltages having different potentials are supplied to the plurality of rotation holding units 4. For this reason, the film forming conditions can be changed by changing the bias voltage for each rotation holding unit 4.

Specifically, in a state where a total of four rotation holding portions 4 are provided on the revolution table 5, each rotation holding portion 4 indicated by “A”, “B”, “C”, “D” in FIG. Are connected to one electrode of the power supply unit 10A for supplying bias voltages of different potentials.
In order to supply bias voltages having different potentials to the rotation holding units 4, it is preferable to provide brush mechanisms on the rotation axis P and apply the voltages through the brush mechanisms. The rotating shaft P is freely held during rotation through a bearing mechanism, but a voltage may be applied through this bearing mechanism.

Hereinafter, the rotation mechanism and the power feeding mechanism will be described.
[Rotating mechanism and feeding mechanism]
FIG. 3 is a schematic diagram of a cross section in the vicinity of the rotation drive unit 15 of the AIP device 101. As shown in FIG. 3, the AIP device 101 is configured to be able to apply different potentials to the rotation holding units 4. “Individually different potentials” means that different potentials are applied to each rotation holding unit 4 and, if necessary, the rotation holding units 4 are divided into several groups (for example, two groups and three groups). Including applying a potential. As described above, when the rotation holding unit 4 indicated by “A”, “B”, “C”, and “D” in FIG. 1 is connected to a power supply unit that supplies bias voltages of four different potentials, rotation holding is performed. A different potential is applied to each part 4. The rotation holding parts 4 indicated by “A”, “B”, “C”, and “D” in FIG. 1 are grouped as “B” and “D” as a first group of “A” and “C”. Are connected to one electrode of the power supply unit 10A that supplies bias voltages having different potentials in the first group and the second group as one second group, and the rotation holding unit 4 is divided into two groups. A potential is applied separately. As will be described later, the number of the rotation holding units 4 on the revolution table 5 may be 6 or 8, and the rotation holding units 4 may be divided into three or more groups. A different bias potential may be applied to each rotation holding unit 4.

The potential supplied from the bias power supply is often a negative DC voltage, but the value may change over time, may be an alternating current, or may be a pulsed waveform that includes a positive voltage intermittently. May be.
The revolving table 5 of the AIP device 101 is attached to the bottom surface side of the vacuum chamber 2 and can revolve with respect to the vacuum chamber 2 via a revolving bearing 155 and a rotating shaft seal 156. The chamber 2 is attached so as to be able to hold the vacuum, and revolves around the Q axis as a rotation axis by a mechanism such as a drive gear 153 (or pulley). The revolution table 5 is formed integrally with the shaft portion 152 (14).

  A rotation shaft 164 that supports a plurality of (four in this case) rotation holding portions 4 so as to be able to rotate about the P axis as a rotation axis is attached to the revolution table 5 via a rotation rotation bearing 161 and is attached to the rotation shaft 164. When the gear 160 meshes with the fixed gear 154 and the rotation shaft 164 revolves due to the revolution of the revolving table 5, the rotation shaft 164 rotates due to the engagement between the fixed gear 154 and the gear 160. Due to the rotation of the rotation shaft 164, the rotation holding portion 4 rotates with the P-axis as the rotation axis. In FIG. 3, the fixed gear 154 is installed on the inner side (Q axis side) of the rotation shaft 164, but may be installed on the outer side.

  In addition, a rotation table 162 (disk shape in the figure) for directly mounting the substrate W is provided on the rotation shaft 164 via an insulator 163. The rotation table 162 is configured to be able to supply a bias voltage via a brush 158. The revolution table 5 and the brush 158 are insulated by an insulating member 159. The rotation table 162 is not electrically connected via the revolution table 5, and a bias voltage having a different potential can be applied to each rotation table 162.

  There is a voltage feedthrough 157 at the center of the revolving table 5, and the bias voltage supplied from below the revolving table 5 maintains a vacuum and also maintains electrical insulation, and above the revolving table 5. Supplied. The supplied bias voltage is connected to the brush 158 by wiring, and the bias voltage is applied to the substrate W through a path from the brush 158 to the rotation table 162 and from the rotation table 162 to the substrate W.

  There are as many brushes 158 that apply a bias voltage to the rotation tables 162 as the rotation holding units 4 provided on the revolution table 5. As described above, the bias voltage is supplied for each rotation holding unit 4 or divided into several groups. Therefore, the voltage feedthrough 157 is provided with electrodes corresponding to the number of rotation axes or the number of groups. A bias voltage is applied to the voltage feedthrough 157 in a rotatable state from the power supply unit 10 </ b> A via the slip ring 151.

  The configuration of the power supply unit 10A has various aspects. In the present embodiment, bias power sources corresponding to the number of rotation holding units 4 or the number of groups are provided, and one pole of each bias power source is connected to each of the rotation holding units 4. For example, as illustrated in FIG. 4, the power supply unit 10 </ b> B includes bias power supplies 10 </ b> B <b> 1 to 10 </ b> B <b> 4 equal to the number (four) of the rotation holding units 4 mounted on the revolution table 5. One poles of the bias power supplies 10B1 to 10B4 are connected to fixed side brush holders (A) to (D) of a four-pole slip ring 151, respectively.

  As a result, the bias voltage of the bias power source 10B1 is held on the base material W mounted on the rotation holding unit 4 marked with "A" in FIGS. 1 and 4, and the rotation voltage holding of the bias power source 10B2 is marked with "B". The bias voltage of the bias power source 10B1 is added to the base material W mounted on the rotation holding unit 4 in which the bias voltage of the bias power source 10B1 is appended with "C" to the base material W mounted on the unit 4. Each is applied to the base material W mounted on the rotation holding unit 4. Here, the power supply unit 10 </ b> B is not limited to the one having the bias power supply equal to the number of groups when the number of the rotation holding units 4 mounted on the revolution table 5 or the rotation holding units 4 are divided into two or more groups. . Even if one bias power source is used, one power source may be used as long as electric power having a plurality of potentials can be supplied to the base material W of the rotation holding unit 4.

  FIG. 4 shows an arc evaporation source 6 as a film supply source. Furthermore, the structure which enables the heating by a heater and process gas introduction is also preferable. Further, as the film supply source, a sputtering evaporation source or a crucible evaporation source may be used instead of the arc evaporation source 6. In the rotation and revolution mechanism, the rotation axis is oriented in the vertical direction, but the direction of the rotation axis is not limited. For example, the rotation axis may be in the horizontal direction.

[Film formation]
In the AIP device 101, bias voltages having different potentials can be individually applied to the rotation holding units 4. For this reason, in the film forming process, the processing can be performed by applying different bias potentials by the rotation holding unit 4. Since different bias voltages can be applied in the film forming process, different film qualities can be formed for each rotation holding unit 4 having a different bias voltage. For example, in the formation of hard coatings such as TiN and TiAlN by the AIP method, a high negative bias voltage (as an example, −150 V to −300 V) and a low negative bias voltage (as an example, −10 V to −100V), it is possible to form a film having different stress levels in a single process.

  Further, since different bias voltages can be applied in the film forming process, different heat input conditions can be obtained for each rotation holding unit 4. For example, in the formation of a hard film such as TiN or TiAlN by the AIP method, the rotation holding unit 4 on which the base material W having a relatively large heat capacity is mounted has a high negative bias voltage and a relatively high heat capacity. Even if the base material W having different heat capacities is mixedly mounted by applying a low negative bias voltage to the rotation holding unit 4 on which the base material W having a small size is mounted, the process of uniform temperature is the same. This is possible with one process.

  Furthermore, a different bias voltage can be applied to each rotation holding unit 4 in the ion bombarding process (a process of cleaning the surface by applying a negative high voltage while irradiating metal ions from an arc evaporation source) prior to film formation. Therefore, it is possible to obtain a heat input condition at the time of bombardment different for each rotation holding unit 4 having a different bias voltage. For example, when forming a hard film such as TiN or TiAlN by the AIP method, a high negative bias voltage is applied to the rotation holding unit 4 on which the base material W that does not easily rise in temperature is applied, and the base material softens due to the temperature rise. By applying a low negative bias voltage to the rotation holding unit 4 equipped with a small-diameter high-speed drill that is easy to perform, it is possible to prevent overheating of the base material that is likely to be overheated, and for a tool with a large diameter to have a sufficient bombard effect. This is possible with the same single process.

As described above, in any case, in the apparatus of the prior art, the process needs to be performed in a plurality of times. However, in the AIP apparatus 101 according to the present embodiment, the same process is performed once. It becomes possible.
[Vacuum deposition method]
The overall process including the film forming process using the AIP apparatus 101 having the above configuration is as follows. As described above, the AIP apparatus 101 includes the arc evaporation source 6 as a film supply source.

(1) Substrate W set to vacuum evacuation First, as shown in FIGS. 1 and 4, the rotation holding portion 4 is arranged on the revolution table 5 arranged in the vacuum chamber 2 in four directions every 90 ° about the revolution axis Q. Consider a case where a film is actually formed by the AIP method using the deployed AIP apparatus 101.
First, the base material W is installed in the rotation holding unit 4. The substrate W may be placed and fixed on the rotation holding unit 4, or the substrate W may be placed on the rotation holding unit 4 using the installation jig 13.

When the substrate W is thus prepared, the inside of the vacuum chamber 2 is evacuated to a high vacuum state using the vacuum pump 3 (evacuation means 3).
(2) Heating (optional process)
The substrate W is preheated by a radiation heating mechanism (heater) in the vacuum chamber 2 as necessary. At this time, the axis Q is revolved as a rotation axis, and the axis P is rotated as a rotation axis.

(3) Ion bombardment treatment Since the film supply source on which the AIP device 101 is mounted is the arc evaporation source 6, an arc discharge is generated by the arc evaporation source 6, and the substrate W is negatively charged with several hundreds V to 1500V. The surface is cleaned by applying a bias voltage. At this time, the axis Q is revolved as a rotation axis, and the axis P is rotated as a rotation axis.

In this ion bombardment process, the AIP device 101 can apply a bias voltage having a different potential for each rotation holding unit 4, and can adjust the degree of cleaning and the degree of temperature rise for each rotation holding unit 4. For this reason, even when base materials W that require different processing conditions for the ion bombardment processing are mixedly mounted, this processing can be performed under conditions suitable for each.
(4) Film formation Arc discharge is generated at the arc evaporation source 6 and a reactive gas (nitrogen or the like) is introduced, and a film is formed while a negative bias voltage in the range of several tens to 300 V is applied to the substrate W. . At this time, the axis Q is revolved as a rotation axis, and the axis P is rotated as a rotation axis.

  In this film formation process, the AIP device 101 can apply a bias voltage having a different potential for each rotation holding unit 4, and by changing the application condition of the bias voltage, the film quality formed on the substrate W, The temperature of the base material W can be adjusted for each rotation holding unit 4. For this reason, even when substrates that require different processing conditions are mixedly mounted, processing can be performed under conditions suitable for each. Further, in the process of searching for processing conditions, since a film having various conditions can be formed in one process, the time required for searching for conditions can be shortened.

[effect]
As described above, according to the AIP device 101 according to the present embodiment, the rotation holding unit 4 can be divided for each rotation holding unit 4 or two or more groups, and the bias voltage applied to each group can be made different. For this reason, it is possible to form films having different stress levels by the same single treatment. In addition, even when base materials W having different heat capacities are mixed and processed, processing at a uniform temperature can be performed by the same single processing. Moreover, the process which has sufficient bombard effect for the base material W which is hard to rise in temperature while preventing overheating of the base material W which is easily overheated can be performed by the same single process. In the apparatus of the prior art, the efficiency is greatly improved as compared with the necessity of performing the processing in a plurality of times.

Second Embodiment
Hereinafter, the AIP apparatus 102 which is an example of the vacuum film-forming apparatus of the present invention will be described. Note that the description using FIGS. 2 and 3 is the same as that in the first embodiment, and thus will not be repeated here. The overall configuration of the AIP device 102 is the same as that in FIG. 1 except for the number of the rotation holding units 4.
[overall structure]
FIG. 5 is a power connection example of the AIP device 102 corresponding to FIG. 4 of the first embodiment. The AIP device 102 includes a cylindrical arc evaporation source 61. Further, eight rotation holding parts 4 are mounted on the revolution table 5, and the eight rotation holding parts 4 are divided into A group and B group. The cylindrical arc evaporation source 61 is provided at the center of the vacuum chamber 2 so that the eight rotation holding portions 4 surround the cylindrical arc evaporation source 61.

The inside of the vacuum chamber 2 can be evacuated by a vacuum evacuation means (vacuum pump) 3, and a cylindrical arc evaporation source 61 is provided at the center of the vacuum chamber 2. Further, depending on the process for forming a film, heating by a heater and introduction of a process gas (not shown) are possible.
In the AIP device 102, power is supplied to the substrate W by the power supply unit 10C. The power supply unit 10C includes an arc power supply 10C1, a bias power supply 10C2, and a changeover switch 10C3. “A” shown in FIG. 5B indicates the four rotation holding parts 4 to which “A” shown in FIG. 5A is attached, and “B” shown in FIG. The four rotation holding | maintenance parts 4 to which "B" shown to a) was attached | subjected are shown.

In the AIP device 102, the A group and the B group of the rotation holding unit 4 are connected to the positive electrode of the arc power supply 10C1 or the negative electrode of the bias power supply 10C2 by the changeover switch 10C3. The power supply unit 10C and the changeover switch 10C3 will be described.
By operating the changeover switch 10C3, the two groups are
a) A period of time connected to the positive electrode of the arc power source 10C1 in order to obtain a potential that operates as the anode of the arc evaporation source 6.
b) The period of connection to the negative electrode of the bias power supply is alternately repeated in order to obtain the potential of the bias voltage 10C2 for controlling the energy of ions incident on the substrate W.

[Film formation]
A film forming process different from that of the first embodiment in the entire process of the film forming method using the AIP apparatus 102 having the above configuration will be described with reference to FIG. FIG. 6 is a timing chart showing the operation of the changeover switch 10C3 in the film forming process.
At time t (0), the changeover switch 10C3 connects the switch A (1) and the switch B (2). At this time, the switch B (1) and the switch A (2) are cut off. The period from time t (0) to time t (1) is set to the first state. Generally, the period from time t (4N-4) to time t (4N-3) is the first state where N = 1, 2, 3,.

  In the first state, the group A base material W is connected to the positive electrode of the arc power supply 10C1. When arc discharge is generated by the cylindrical arc evaporation source 61, the base member W of the A group functions as an anode for arc discharge. The base material W of the B group is connected to the negative electrode of the bias power source 10C2. A bias voltage is applied to the base material W of group B. At this time, the base material W is rotated and revolved so that both the group A base material W and the group B base material W are covered with the vapor from the cylindrical arc evaporation source 61. At this time, a film without bias application is formed on the base material W of the A group, and a film is formed on the base material W of the B group with a bias applied.

At time t (1), the changeover switch 10C3 cuts off the switch B (2) and connects the switch B (1). Thereby, the base material W of the B group is connected to the positive electrode of the arc power supply 10C1. Thereafter, at time t (2), the changeover switch 10C3 cuts off the switch A (1) and connects the switch A (2).
At this time, from the viewpoint of arc discharge stability, the period in which both the switch A (1) and the switch B (1) are connected (the period from the time t (1) to the time t (2)) slightly overlaps. Good.

The period from time t (2) to time t (3) is set to the second state. Generally, the period from time t (4N-2) to time t (4N-1) is the second state, where N = 1, 2, 3,.
In the second state, the group B base materials W are connected to the positive electrode of the arc power supply 10C1. When arc discharge is generated by the cylindrical arc evaporation source 61, the group B base materials W function as anodes for arc discharge. The group A base material W is connected to the negative electrode of the bias power source 10C2. A bias voltage is applied to the base material W of the A group. At this time, the base material W is rotated and revolved so that both the group A base material W and the group B base material W are covered with the vapor from the cylindrical arc evaporation source 61. At this time, a film without bias application is formed on the base material W of the B group, and the film is formed on the base material W of the A group with a bias applied.

  At time t (3), the changeover switch 10C3 cuts off the switch A (2) and connects the switch A (1). Thereby, the base material W of A group is connected to the positive electrode of the arc power supply 10C1. Thereafter, at time t (4), the changeover switch 10C3 cuts off the switch B (1) and connects the switch B (2). From the viewpoint of the stability of arc discharge, the period in which both the switch A (1) and the switch B (1) are connected (the period from the time t (3) to the time t (4)) should be slightly overlapped. Is as described above.

  As described above, at least one of the A group of base materials W and the B group of base materials W on the revolution table 5 is at a potential operable as an anode for arc discharge. Since the base material W is used as an anode electrode, arc discharge can be stably maintained without a special anode. Then, during that period, a film can be formed on the other substrate W at the potential of the bias voltage in a state where the bias voltage is applied and the film quality is controlled.

  By the way, a film to which no bias is applied is formed on the substrate W that is at the potential of the anode during operation as an anode, but a bias is applied in a predetermined cycle, and the film quality due to the bias is in the meantime. Can be controlled. Then, the condition of the bias voltage to be applied is set to a level that takes into account that there is a period in which the substrate W moves at the potential of the anode, so that a desired film quality is formed.

  From the viewpoint of film quality, film formation exceeding 100 nm in a state where no bias voltage is applied is problematic because the fragility of the layer is considered to significantly affect the overall film quality. Preferably, when the thickness at which the film continuously grows during the anodic potential is 10 nm or less, the concern about the film quality is reduced. From the viewpoint of film quality, the faster the switching time, the better. However, from the viewpoint of easy switching of a large current output from the arc power source, there is a problem at a switching frequency exceeding 1 kHz, and from a practical viewpoint. 100 Hz or less is preferable.

From the above, when t is the time (sec) required to form a 100 nm film on the substrate during the film formation process, the switching cycle T (sec) may satisfy t>T> 1 msec. preferable.
Such a cycle is repeated. By doing in this way, that is, by repeating the above-mentioned two time intervals alternately, it becomes possible to perform film formation by the AIP method on both the A-group substrate W and the B-group substrate W. .

In the above description, the film formation by the AIP method has been described as an example, but a sputter evaporation source can also be used as the evaporation source.
[effect]
In the apparatus of the prior art, since the rotation holding unit 4 is at the same potential, an anode disposed around the cylindrical arc evaporation source 61 is essential when a bias voltage is applied for film quality control. When such an anode is present, vapor adheres to the anode, thereby reducing the film formation rate and impairing productivity, and the film deposited on the anode may be peeled off to cause defects in the film. In the AIP device 102, such a problem does not occur.

In addition, the electric potential of each rotation holding part 4 does not necessarily change rapidly between the anode electric potential and the bias electric potential of the arc discharge, and if necessary, via the floating state or the ground state as described above. Also good.
In addition, the bias voltage during the period in which the bias voltage is applied does not necessarily have to be constant. Particularly, when the switching cycle is relatively long, the pulse voltage has a cycle sufficiently faster than the switching cycle. It is preferable to apply a voltage to.

In the present embodiment, the rotation holding unit 4 has been described as being divided into two groups, but may be divided into more groups. At this time, at least one group (or one rotation holding unit 4) needs to act as an anode for arc discharge at any timing.
<Third Embodiment>
Hereinafter, the plasma CVD apparatus 103 which is an example of the vacuum film-forming apparatus of the present invention will be described. Note that the description using FIGS. 2 and 3 is the same as that in the first embodiment, and thus will not be repeated here. In addition, the description using FIG. 1 will not be repeated here for the portion where the AIP apparatus 101 of the first embodiment may be replaced with the plasma CVD apparatus 103.

[overall structure]
FIG. 7 shows the overall configuration of the plasma CVD apparatus 103 corresponding to FIG. 1 of the first embodiment, and FIG. 8 shows the plasma CVD corresponding to FIG. 4 of the first embodiment and FIG. 5 of the second embodiment. 3 is a power connection example of the device 103. FIG. In this plasma CVD apparatus 103, six rotation holding parts 4 are mounted on the revolution table 5, and the six rotation holding parts 4 are divided into A group and B group.

As shown in FIG. 8, the above-described plasma CVD apparatus 103 generates a plasma in a gas supply unit 9 that supplies a process gas including a source gas into the vacuum chamber 2 and the process gas supplied in the vacuum chamber 2. A plasma generation power source 10 is provided, and a film is formed on the base material W held by the rotation holding unit 4 using a plasma CVD method.
The gas supply unit 9 is configured to supply a predetermined amount of a source gas necessary for forming the CVD film and an assist gas for assisting the film formation from the cylinder 16 into the vacuum chamber 2.

  Specifically, as a process gas, when forming a carbon-based CVD film such as DLC (diamond-like carbon, amorphous carbon film), hydrocarbons (acetylene, ethylene, methane, ethane, benzene, A material gas containing an inert gas (such as argon or helium) as an assist gas to a source gas containing toluene or the like is used. In the case of forming a silicon compound-based CVD film (SiOx film, SiOC film, SiNx film, SiCN film), a silicon-based organic compound (monosilane, TMS, TEOS, HMDSO, etc.) or a source gas containing silicon such as silane In addition, a reaction gas such as oxygen and an inert gas such as argon added as an assist gas can be used. In addition to the above-described CVD film, a TiOx film, an AlOx film, an AlN film, or the like can be formed as the CVD film.

  In addition, a small amount of additive source gas may be mixed with the main source gas. For example, when a DLC film is formed, a film containing Si in DLC can be formed by adding a small amount of a silicon-based organic compound gas using hydrocarbon as a main source gas. Alternatively, when a DLC film is formed, by adding a small amount of metal-containing source gas (for example, TiPP (titanium isopropoxide) or TDMAT (tetradimethylaminotitanium)) as a main source gas of hydrocarbon A film containing a metal (titanium in the example) can be formed in DLC.

In addition, these source gas, reaction gas, and assist gas can be used combining suitably the kind of gas to be used.
Further, as shown in FIG. 8, another film supply source 6 (sputtering source, arc evaporation source, etc.) may be provided in the vacuum chamber 2.
On the other hand, the plasma generation power source 10 provided in the plasma CVD apparatus 103 is used to generate a glow discharge in the process gas supplied into the vacuum chamber 2 to generate plasma, and supplies AC power. . As the AC power supplied from the plasma generating power source 10, not only an AC whose current and voltage change positively and negatively according to a sine wave waveform, but also a rectangular wave AC that switches between positive and negative according to a pulsed waveform may be used. In addition, for this alternating current, a continuous pulse group having the same polarity or an alternating sine wave alternating with a rectangular wave can be used. The voltage waveform during actual plasma generation may be distorted due to the influence of plasma generation. Further, when the plasma is generated, the zero level of the AC voltage shifts, and when the potential of each electrode is measured with respect to the ground potential, 80-95% of the applied voltage is applied to the minus side electrode and 5% of the applied voltage is applied to the plus side electrode. It is observed that 20% is added. The negative electrode at the time of plasma generation attracts positive ions in the plasma, emits electrons by impact of the positive ions, supplies electrons to the plasma, and serves as a working electrode that plays a main role in generating glow discharge plasma. . The positive electrode is in a state of drawing electrons in the plasma and serves as a counter electrode for glow discharge plasma generation.

The frequency of the alternating current supplied from the plasma generating power supply 10 is preferably 1 kHz to 1 MHz. This is because if the frequency is less than 1 kHz, the coating is likely to be charged up, and a mechanism for transmitting electric power having a frequency exceeding 1 MHz to the base material that rotates and revolves is difficult. Furthermore, considering the availability of the power source, etc., the range of 10 kHz to 400 kHz is more preferable. The AC voltage supplied from the plasma generating power supply 10 is preferably 300 to 3000 V, which is a peak value and is necessary for maintaining glow discharge. Furthermore, the AC power supplied from the plasma generating power supply 10 varies depending on the surface area of the substrate W, but it is preferable that the power density per unit area is about 0.05 to 5 W / cm ² .

  When an alternating current of such frequency, voltage, and power (power density) is applied between a pair of electrodes arranged in the vacuum chamber 2, a glow discharge is generated between the electrodes, and the generated glow discharge causes a vacuum chamber. The process gas supplied into 2 is decomposed to generate plasma. Then, these gas components decomposed by the plasma are deposited on the electrode surface, whereby a CVD film is formed. That is, if the substrate W is used for either of the pair of electrodes, a CVD film can be formed on the surface of the substrate W.

In the vacuum chamber 2, a heater 17 for adjusting the film quality by controlling the temperature of the substrate may be provided as appropriate.
Incidentally, as shown in FIG. 8, in the plasma CVD apparatus 103 of the present invention, half of the plurality of rotation holding units 4 are the first group 18 connected to one pole of the plasma generation power source 10. In addition, the remaining half of the plurality of rotation holding units 4 is a second group 19 connected to the other electrode of the plasma generation power source 10. Plasma can be generated between the substrate W held by the rotation holding unit 4 of the first group 18 and the substrate W held by the rotation holding unit 4 of the second group 19 having different polarities. .

Specifically, in a state where a total of six rotation holding portions 4 are arranged on the revolution table 5, there are a total of three rotation holding portions 4 of the first group 18 indicated by “A” in FIG. There are also a total of three rotation holding parts 4 of the second group 19 indicated by “B” in FIG. 8, and the number of rotation holding parts 4 belonging to the first group 18 and the second group 19 The number is the same as the number of the rotation holding parts 4.
As for these rotation holding parts 4, the rotation holding parts 4 of the second group 19 are provided on both sides of the rotation holding parts 4 belonging to the first group 18, and the rotation holding parts 4 of these second groups 19 are provided. Further, a certain rotation holding portion 4 belonging to another first group 18 is provided next to the rotation holding portion 4. That is, the rotation holding unit 4 belonging to the first group 18 and the rotation holding unit 4 belonging to the second group 19 are arranged so as to be alternately (alternately) arranged one by one around the revolution axis Q of the revolution table 5. Has been.

  All of the three rotation holding units 4 belonging to the first group 18 are connected to one electrode of the plasma generation power source 10. Further, all of the three rotation holding portions 4 belonging to the second group 19 are connected to the other electrode of the plasma generation power source 10. That is, during voltage application, the rotation holding unit 4 belonging to the first group 18 and the rotation holding unit 4 belonging to the second group 19 always have opposite polarities.

In addition, in order to make each rotation holding | maintenance part 4 into the above-mentioned polarity, it is good to provide a brush mechanism (not shown) to the revolution axis Q and the rotation axis P, respectively, and to apply the voltage of each polarity through this brush mechanism. The revolution shaft Q and the rotation shaft P are held freely during rotation through a bearing mechanism, but a voltage may be applied through this bearing mechanism.
[Film formation method]
A film forming process different from that of the first embodiment in the entire process of the film forming method using the plasma CVD apparatus 103 having the above-described configuration will be described.

The base material W is set, and the vacuum chamber 2 is brought into a high vacuum state. Next, if necessary, an inert gas such as Ar or a gas such as H ₂ or O ₂ is supplied into the vacuum chamber 2 using the gas supply unit 9, and electric power is supplied from the plasma generation power source 10. Glow discharge for surface cleaning may be generated between the materials W (ion bombardment treatment). Moreover, you may pre-heat with respect to the base material W which self-revolves using the heater 17 mentioned above. When another film supply source 6 (sputter source, arc evaporation source, etc.) is provided in the vacuum chamber 2, these film supply sources are used to insert between the film formed by plasma CVD and the substrate. An intermediate layer may be formed.

Thereafter, the process gas is supplied into the vacuum chamber 2 using the gas supply unit 9, and the inside of the vacuum chamber 2 is maintained at a pressure of 0.1 to 1000 Pa suitable for film formation.
In film formation, AC power is supplied from the plasma generation power source 10, and the substrate W of the rotation holding unit 4 belonging to the first group 18 and the substrate W of the rotation holding unit 4 belonging to the second group 19 During this period, glow discharge is generated, and plasma necessary for film formation is generated between the substrates W.

  The pressure during film formation varies depending on the type of CVD film (process gas or reactive gas) to be formed, but a pressure of about 0.1 Pa to 1000 Pa is preferable. As described above, by setting the pressure to about 0.1 Pa to 1000 Pa, it is possible to generate a stable glow discharge, and it is possible to perform film formation at a good film formation rate. In addition, the pressure at the time of film-forming is further preferable to be 100 Pa or less from the viewpoint of suppressing the generation of powder accompanying the reaction in the gas.

The AC voltage supplied from the plasma generating power supply 10 is between 300 V and 3000 V (the peak value of the voltage between both electrodes) necessary for maintaining glow discharge. Furthermore, the AC output power supplied from the plasma generation power source 10 is preferably about 0.05 to 5 W / cm ² in terms of power per unit area.
After adjusting the alternating voltage and power supplied from the plasma generation power source 10 in this way and rotating the base material W together with the rotation holding part 4, the base material W adjacent to the circumferential direction (the adjacent base material) A stable glow discharge occurs during (W), and a CVD film having a uniform film thickness can be formed on the surface of the substrate W.

When the film formation process is completed, the output of the plasma generation power source 10 and the introduction of the process gas are stopped, and the film formation is completed. When the temperature of the base material W is high, the temperature is lowered as necessary, the inside of the vacuum chamber 2 is opened to the atmosphere, and the base material W is removed. If it does in this way, it will become possible to obtain the base material W in which the CVD film was formed in the surface.
As described above, if the rotation holding parts 4 of the first group 18 and the rotation holding parts 4 of the second group 19 that are opposite in polarity are arranged alternately (alternately) in the circumferential direction, A potential difference always occurs between the base materials W held by the adjacent rotation holding portions 4, and a glow discharge is surely generated between the two. And if the positive and negative of the plasma generation power supply 10 are switched, the polarities of the rotation holding portions 4 adjacent to each other in the circumferential direction are also switched, and glow discharge is continuously generated between the two. Therefore, it is possible to perform film formation on a large number of substrates W at once and uniformly.

  That is, when the base material W of the rotation holding unit 4 belonging to the first group 18 works as a working electrode and a CVD film is formed on the side of the base material W, the rotation holding unit 4 belonging to the second group 19 The base material W becomes a counter electrode (opposite electrode). If the positive and negative of the plasma generating power source 10 are switched, the base material W of the rotation holding unit 4 belonging to the second group 19 becomes the working electrode, and the base material W of the rotation holding unit 4 belonging to the first group 18 is the counter electrode. It becomes.

[effect]
As described above, according to the plasma CVD apparatus 103 according to the present embodiment, even if the substrate W is a counter electrode, the revolution table 5 and the housing of the vacuum chamber 2 do not become a counter electrode. Therefore, these members do not act as an electrode for generating a glow discharge for plasma generation, and even if the insulating film is deposited thickly over a long period of operation, plasma instability does not occur, film quality and It is also possible to stably produce a CVD film having no variation in thickness. In addition, since these members do not act as discharge generating electrodes, they are not directly exposed to plasma that decomposes the source gas, and therefore, a film is less likely to be deposited on these members than in the prior art. For this reason, scattering of flakes caused by thick deposition of the film hardly occurs, and film defects are hardly generated. In addition, although the coating itself represented by metal-containing DLC is somewhat conductive, in this case as well, it is difficult for the coating to deposit on the housing of the vacuum chamber 2, etc., flakes are unlikely to scatter, and coating defects occur. The effect that it is difficult to do remains. In addition, even when a certain conductive film such as metal-containing DLC is formed on the base material, a film with poor insulating properties may be formed in the chamber portion where the plasma is weak. In such a case, the effect of preventing plasma destabilization also appears.

  In addition, regarding the third embodiment, the most preferred embodiment has been described as an example, but the essential elements of the technology are to divide the base material W arranged on the revolution table into groups, and The point is that when the group generates glow discharge plasma, the period of acting as a working electrode at a negative potential that mainly functions for plasma generation and the period of acting as its counter electrode are alternately repeated in time. In this way, members such as a vacuum chamber are released from the role related to plasma generation, and even if they are covered with an insulating film, they do not have adverse effects such as plasma becoming unstable.

  From such a viewpoint, the range of the third embodiment is not limited to the above-described example having two groups of rotation holding portions connected to both poles of one plasma generating power source. For example, the rotation holding unit is divided into three groups, and has a negative potential and serves as a working electrode for glow discharge plasma generation, a period acting as a counter electrode thereof, and is separated from the plasma generation power supply circuit and does not play a particular role in plasma generation. It is also included in the technical scope of the present invention to repeat the period in time by shifting the phase of the roles. Alternatively, for example, the rotation holding unit is divided into three groups, each group is at a negative potential, and the time ratio of operating as a working electrode for glow discharge plasma generation is 2/3, and the time ratio of operating as the counter electrode is 1/3. As described above, it is also an embodiment of the present invention that each group repeats each time with the phase shifted. Further, for example, it is also an embodiment of the present invention that the rotation holding unit is divided into three groups and three-phase AC power is applied thereto.

  Further, the present invention is not limited to the above-described embodiments, and further, combinations of the embodiments are possible, and the shape, structure, material, combination, etc. of each member are appropriately changed without departing from the essence of the invention. Is possible. Further, in the embodiment disclosed this time, matters that are not explicitly disclosed, for example, operating conditions and operating conditions, various parameters, dimensions, weights, volumes, etc. of components deviate from a range that is normally implemented by those skilled in the art. However, matters that can be easily assumed by those skilled in the art are employed.

101 Vacuum deposition apparatus (AIP apparatus of the first embodiment)
102 Vacuum deposition apparatus (AIP apparatus of the second embodiment)
103 Vacuum deposition apparatus (plasma CVD apparatus of the third embodiment)
2 Vacuum chamber 3 Vacuum exhaust means (vacuum pump)
DESCRIPTION OF SYMBOLS 4 Rotation holding | maintenance part 5 Revolving table 6 Film supply source 8 Revolution mechanism 9 Gas supply part 10 Plasma generating power supply 10A Power supply unit (1st Embodiment)
10B power supply unit (second embodiment)
10C power supply unit (third embodiment)
DESCRIPTION OF SYMBOLS 11 Cover member 12 Disk 13 Installation jig 14 Shaft part 15 Rotation drive part 16 Cylinder 17 Heater 18 1st group 19 2nd group P Rotating shaft Q Revolving shaft W Base material

Claims (9)

A vacuum chamber, vacuum evacuation means for evacuating the inside of the vacuum chamber, a plurality of rotation holding portions for holding the substrate to be film-formed in a rotating state, and the plurality of rotation holding portions of the rotation holding portion. A revolving mechanism that revolves around a revolving axis that is parallel to the axis of rotation, and a vacuum film forming apparatus that forms a film on the substrate held by the rotation holding unit in the vacuum chamber,
The vacuum film forming apparatus, wherein the plurality of rotation holding units are divided into a plurality of groups, and different potentials are supplied to the respective groups.   The vacuum film forming apparatus according to claim 1, wherein electric power having a different potential for each group is supplied from a bias power source. The vacuum film forming apparatus further includes an evaporation source,
An evaporation source power source for supplying power to the evaporation source so that the evaporation source becomes a cathode, and a bias power source for supplying a bias voltage to the substrate,
The plurality of rotation holding portions are divided into at least two groups,
Each group repeats the state connected to the positive electrode of the evaporation source power supply and the state connected to the bias power supply alternately in time, and at least one group operates as the anode of the evaporation source. The vacuum film-forming apparatus according to claim 1, wherein the state is maintained.   Before switching the connection of only one group that is connected to the positive electrode of the evaporation source power source, connect another group to the positive electrode of the evaporation source power source, The vacuum film-forming apparatus according to claim 3, further comprising a state in which is supplied.   The vacuum film forming apparatus generates plasma in the gas supplied into the vacuum chamber by a voltage applied to the rotation holding unit, and each group of the rotation holding unit becomes a negative potential to generate glow discharge plasma. 2. The vacuum film forming apparatus according to claim 1, wherein a state operating as a working electrode that plays a main role and a state operating as a counter electrode thereof are alternately repeated in time.   The vacuum film forming apparatus includes a plasma generation power source that generates plasma in the source gas supplied into the vacuum chamber, and the plurality of rotation holding portions are configured in two groups, and are provided at one electrode of the plasma generation power source. The vacuum film forming apparatus according to claim 5, wherein the vacuum film forming apparatus is divided into one of a first group connected and a second group connected to the other electrode of the plasma generation power source. The revolving mechanism has a revolving table that can revolve around the revolving axis,
The vacuum film forming apparatus according to claim 6, wherein each of the plurality of rotation holding portions is arranged to have an equal radius from the revolution axis of the revolution table and at equal intervals around the revolution axis. .   The rotation holding portions belonging to the first group and the rotation holding portions belonging to the second group are the same in number, and are arranged side by side in an alternating manner around the revolution axis. The vacuum film-forming apparatus according to claim 6 or 7.   The rotation holding portions belonging to the first group and the rotation holding portions belonging to the second group are the same in number, and two rotation holding portions are arranged side by side around the revolution axis. The vacuum film-forming apparatus according to claim 6 or 7.

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