JP2013044023A - 多元系合金の絶縁破壊電圧の評価方法 - Google Patents
多元系合金の絶縁破壊電圧の評価方法 Download PDFInfo
- Publication number
- JP2013044023A JP2013044023A JP2011182834A JP2011182834A JP2013044023A JP 2013044023 A JP2013044023 A JP 2013044023A JP 2011182834 A JP2011182834 A JP 2011182834A JP 2011182834 A JP2011182834 A JP 2011182834A JP 2013044023 A JP2013044023 A JP 2013044023A
- Authority
- JP
- Japan
- Prior art keywords
- breakdown voltage
- dielectric breakdown
- thin film
- component alloy
- needle electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Physical Vapour Deposition (AREA)
- High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
Abstract
【解決手段】接点材料に用いられるCu、Cr、Agなどの複数の金属系物質を加熱して蒸気化し、それを基板5に蒸着させ、成分が順次変化した薄膜6を形成し、この薄膜6を平板電極として接地し、薄膜6と所定のギャップを持って針電極11を対向配置し、薄膜6を針電極11の軸方向と直交する方向に所定間隔で移動させながら、針電極11と薄膜6間の絶縁破壊電圧を測定する。変化した成分量と絶縁破壊電圧の関係を求める評価方法である。
【選択図】 図3
Description
2 第2の蒸発源
3 蒸気通過孔
4 制御板
5 基板
6 薄膜
10 真空容器
11 針電極
14 移動装置
Claims (5)
- 複数の金属系物質の成分を順次変化させた薄膜を準備し、
前記薄膜を平板電極として接地し、
前記薄膜と所定のギャップを持って針電極を対向配置し、
前記薄膜を前記針電極の軸方向と直交する方向に所定間隔で移動させながら、
前記針電極と前記薄膜間の絶縁破壊電圧を測定することを特徴とする多元系合金の絶縁破壊電圧の評価方法。 - 前記薄膜は、金属系物質の蒸気を発生させる複数の蒸発源と、
前記金属系物質の蒸気の拡散角度を制御する制御板と、
前記制御板を通過した蒸気を蒸着させる基板とで構成される蒸着装置で形成されることを特徴とする請求項1に記載の多元系合金の絶縁破壊電圧の評価方法。 - 前記金属系物質は、CrとCuとであることを特徴とする請求項1または請求項2に記載の多元系合金の絶縁破壊電圧の評価方法。
- 前記絶縁破壊電圧を真空中で測定することを特徴とする請求項1乃至請求項3のいずれか1項に記載の多元系合金の絶縁破壊電圧の評価方法。
- 前記絶縁破壊電圧の測定時に、放電によって蒸発、放出される成分を分析することを特徴とする請求項1乃至請求項4のいずれか1項に記載の多元系合金の絶縁破壊電圧の評価方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011182834A JP5764011B2 (ja) | 2011-08-24 | 2011-08-24 | 多元系合金の絶縁破壊電圧の評価方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011182834A JP5764011B2 (ja) | 2011-08-24 | 2011-08-24 | 多元系合金の絶縁破壊電圧の評価方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013044023A true JP2013044023A (ja) | 2013-03-04 |
JP5764011B2 JP5764011B2 (ja) | 2015-08-12 |
Family
ID=48008164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011182834A Expired - Fee Related JP5764011B2 (ja) | 2011-08-24 | 2011-08-24 | 多元系合金の絶縁破壊電圧の評価方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5764011B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022016923A1 (zh) * | 2020-07-21 | 2022-01-27 | 上海恩捷新材料科技有限公司 | 一种薄膜连续耐电压的测试方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5979864A (ja) * | 1982-10-29 | 1984-05-09 | Hitachi Ltd | フリツテイング電圧測定装置 |
JPH10185878A (ja) * | 1996-12-26 | 1998-07-14 | Mitsubishi Electric Corp | 絶縁破壊測定方法 |
US20030062919A1 (en) * | 2001-09-28 | 2003-04-03 | Vargas Leroy C. | Method and apparatus for detecting pinhole defects in a dielectric layer |
JP2006236847A (ja) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | 接点材料および真空バルブ |
JP4263964B2 (ja) * | 2003-08-26 | 2009-05-13 | 株式会社東芝 | 傾斜組成膜製造装置 |
-
2011
- 2011-08-24 JP JP2011182834A patent/JP5764011B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5979864A (ja) * | 1982-10-29 | 1984-05-09 | Hitachi Ltd | フリツテイング電圧測定装置 |
JPH10185878A (ja) * | 1996-12-26 | 1998-07-14 | Mitsubishi Electric Corp | 絶縁破壊測定方法 |
US20030062919A1 (en) * | 2001-09-28 | 2003-04-03 | Vargas Leroy C. | Method and apparatus for detecting pinhole defects in a dielectric layer |
JP4263964B2 (ja) * | 2003-08-26 | 2009-05-13 | 株式会社東芝 | 傾斜組成膜製造装置 |
JP2006236847A (ja) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | 接点材料および真空バルブ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022016923A1 (zh) * | 2020-07-21 | 2022-01-27 | 上海恩捷新材料科技有限公司 | 一种薄膜连续耐电压的测试方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5764011B2 (ja) | 2015-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Even | The Even-Lavie valve as a source for high intensity supersonic beam | |
Salter et al. | Ambient surface mass spectrometry using plasma-assisted desorption ionization: effects and optimization of analytical parameters for signal intensities of molecules and polymers | |
Feder et al. | Ion beam sputtering of Ag–Angular and energetic distributions of sputtered and scattered particles | |
DE102015104240A1 (de) | Durch Aufheizen zu reinigender QCM-Sensor und dessen Verwendung in einem OVPD-Beschichtungssystem | |
JP5764011B2 (ja) | 多元系合金の絶縁破壊電圧の評価方法 | |
Venkattraman et al. | Direct simulation Monte Carlo modeling of metal vapor flows in application to thin film deposition | |
KR20140098693A (ko) | 진공증착장치 및 진공증착방법 | |
An et al. | Characterization of high-current electron beam interaction with metal targets | |
Han et al. | Electrical explosions of Al, Ti, Fe, Ni, Cu, Nb, Mo, Ag, Ta, W, W-Re, Pt, and Au wires in water: A comparison study | |
Bobzin et al. | Numerical study on plasma jet and particle behavior in multi-arc plasma spraying | |
Irimiciuc et al. | Investigation of laser‐produced plasma multistructuring by floating probe measurements and optical emission spectroscopy | |
Bouazza et al. | Understanding the contribution of energy and angular distribution in the morphology of thin films using Monte Carlo simulation | |
US11501959B2 (en) | Sputtering apparatus including gas distribution system | |
Abdelkader | 3D Visualization of the Effect of Plasma Temperature on Thin-Film Morphology | |
Pielsticker et al. | Inelastic electron scattering by the gas phase in near ambient pressure XPS measurements | |
Gamba et al. | Multi‐Material Aerosol Jet Printing of Al/Cuo Nanothermites for Versatile Fabrication of Energetic Antennas | |
Hassan et al. | Monte Carlo simulation model for magnetron sputtering deposition | |
Borrajo-Pelaez et al. | The effect of the molecular mass on the sputtering of Si, SiC, Ge, and GaAs by electrosprayed nanodroplets at impact velocities up to 17 km/s | |
Klusoň et al. | Measurement of the plasma and neutral gas flow velocities in a low-pressure hollow-cathode plasma jet sputtering system | |
Xu et al. | Researches on uniformity of diamond-like carbon films deposited on inner surface of long and slender quartz glass tube by enhanced glow discharge plasma immersion ion implantation and deposition | |
Melnyk et al. | Modeling of electron sources for high voltage glow discharge forming profiled electron beams | |
Yasumatsu et al. | Ultrahigh-sensitive detection of molecules produced in catalytic reactions by uni-atomic-composition bi-element clusters supported on solid substrate | |
JP2008111756A (ja) | 微細粒子成分分析装置 | |
Zöhrer et al. | Influence of Ar gas pressure on ion energy and charge state distributions in pulsed cathodic arc plasmas from Nb–Al cathodes studied with high time resolution | |
CN110656314A (zh) | 一种磁控溅射制备合金纳米薄膜的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140808 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20150218 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150427 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150515 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150612 |
|
LAPS | Cancellation because of no payment of annual fees |