JP2013038391A - Integrated circuit structure and backside illumination type image sensor device - Google Patents

Integrated circuit structure and backside illumination type image sensor device Download PDF

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Publication number
JP2013038391A
JP2013038391A JP2012126896A JP2012126896A JP2013038391A JP 2013038391 A JP2013038391 A JP 2013038391A JP 2012126896 A JP2012126896 A JP 2012126896A JP 2012126896 A JP2012126896 A JP 2012126896A JP 2013038391 A JP2013038391 A JP 2013038391A
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semiconductor substrate
layer
low
opening
dielectric layer
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JP2012126896A
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JP5543992B2 (en
Inventor
Jeng-Shyan Lin
政賢 林
Dun-Nian Yaung
敦年 楊
Jinsei Ryu
人誠 劉
Wen-De Wang
文徳 王
Shuang-Ji Tsai
雙吉 蔡
Yueh-Chiou Lin
月秋 林
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a pad structure of a backside illumination type image sensor chip.SOLUTION: An integrated circuit structure includes: a semiconductor substrate including a front surface and a rear surface; a low k dielectric layer disposed on the front surface of the semiconductor substrate; a non low k dielectric layer disposed on the low k dielectric layer; a metal pad disposed on the non low k dielectric layer; an opening, which extends from the rear surface of the semiconductor substrate, penetrates through the semiconductor substrate, a dielectric pad, and the low k dielectric layer, and exposes a surface of the metal pad; and a protection layer formed on a side wall and a bottom part of the opening and partially covering the exposed surface of the metal pad.

Description

本発明は、裏面照射（BSI）型イメージセンサチップに関し、特に、裏面照射（BSI）型イメージセンサチップのパッド構造に関するものである。   The present invention relates to a backside illumination (BSI) type image sensor chip, and more particularly to a pad structure of a backside illumination (BSI) type image sensor chip.

裏面照射（BSI）型イメージセンサチップは、光子を捕獲する高効率により、前面照射型センサチップに取って代わっている。BSI型イメージセンサチップの形成では、イメージセンサ及び論理回路は、ウエハのシリコン基板上に形成され、次いでシリコンチップの前面に相互接続構造を形成する。相互接続構造は、底部金属層M１から上層金属層Mtopを含む複数の金属層を含む。   Back-illuminated (BSI) image sensor chips are replacing front-illuminated sensor chips due to the high efficiency of capturing photons. In the formation of the BSI type image sensor chip, the image sensor and the logic circuit are formed on the silicon substrate of the wafer, and then an interconnect structure is formed on the front surface of the silicon chip. The interconnect structure includes a plurality of metal layers including a bottom metal layer M1 to an upper metal layer Mtop.

次いで、ウエハは、反転される。背面研削は、シリコン基板の背面からシリコン基板に行われる。バッファ酸化層は、残りのシリコン基板の背面上に形成されることができ、第１開口は、バッファ酸化層から延伸され、シリコン基板に形成されたシャロートレンチアイソレーション（STI）パッドでストップするように形成される。次いで第２開口が第１開口内に形成されて、STIパッド及びSTIパッドのエッチングされた部分の直下にある層間絶縁膜（ILD）を更にエッチングし、底部金属層M１の金属パッドが露出される。第２開口は第１開口より小さい。アルミニウム銅パッドは、第１及び第２開口内に形成され、金属層M１の金属パッドに電気的接続される。アルミニウム銅パッドは、BSIチップを接合するのに用いられることができる。   The wafer is then inverted. The back grinding is performed on the silicon substrate from the back surface of the silicon substrate. A buffer oxide layer may be formed on the back surface of the remaining silicon substrate, and the first opening extends from the buffer oxide layer and stops at a shallow trench isolation (STI) pad formed in the silicon substrate. Formed. A second opening is then formed in the first opening to further etch the STI pad and the interlayer dielectric (ILD) immediately below the etched portion of the STI pad, exposing the metal pad of the bottom metal layer M1. . The second opening is smaller than the first opening. The aluminum copper pad is formed in the first and second openings and is electrically connected to the metal pad of the metal layer M1. Aluminum copper pads can be used to bond BSI chips.

従来の接合構造は、ボールシェアテスト中に薄膜を剥離させる可能性があることが見つかっている。アルミニウム銅パッドに接合されている底部金属層M１の金属パッドは、下方のエッチストップ層から剥離される可能性がある。剥離は、金属パッドと、通常、炭化ケイ素で構成されたエッチストップ層との間の劣った接着性によって生じる。   Conventional joint structures have been found to have the potential to peel thin films during a ball share test. The metal pad of the bottom metal layer M1 that is bonded to the aluminum copper pad may be stripped from the underlying etch stop layer. Delamination is caused by poor adhesion between the metal pad and an etch stop layer, usually composed of silicon carbide.

米国特許第７５８２５０２号明細書US Pat. No. 7,582,502

裏面照射（BSI）型イメージセンサチップのパッド構造を提供する。   A pad structure of a backside illuminated (BSI) type image sensor chip is provided.

本実施形態に基づき、集積回路構造は、半導体基板、及び半導体基板の底面から上向きに半導体基板内に延伸した誘電パッドを含む。低k誘電体層は、半導体基板の下方に配置される。金属パッドは、第１非低k誘電体層の下方に配置される。第２非低k誘電体層は、金属パッドの下方に配置される。開口は、半導体基板の上面から下向きに延伸し、半導体基板、誘電パッド、及び低k誘電体層を貫通し、開口は、金属パッドの上面に到達する。保護層は、開口の側壁上の一部を含み、開口の底部にある保護層の一部は、除去される。   Based on this embodiment, the integrated circuit structure includes a semiconductor substrate and a dielectric pad extending into the semiconductor substrate upward from the bottom surface of the semiconductor substrate. The low k dielectric layer is disposed below the semiconductor substrate. The metal pad is disposed below the first non-low k dielectric layer. The second non-low k dielectric layer is disposed below the metal pad. The opening extends downward from the top surface of the semiconductor substrate and penetrates the semiconductor substrate, the dielectric pad, and the low-k dielectric layer, and the opening reaches the top surface of the metal pad. The protective layer includes a portion on the sidewall of the opening, and a portion of the protective layer at the bottom of the opening is removed.

他の実施形態に基づき、集積回路構造は、半導体基板を含む。シャロートレンチアイソレーション（STI）パッドは、半導体基板の底面から半導体基板内に延伸する。イメージセンサは、半導体基板の底面に配置される。複数の低k誘電体層は、半導体基板の下方に配置される。第１非低k誘電体層は、低k誘電体層の下方に配置される。金属パッドは、第１非低k誘電体層の下方に配置される。第１開口は、半導体基板の上面からSTIパッドの上面に延伸する。第２開口は、STIパッドの上面から金属パッドの上面に延伸し、第１及び第２開口は、接続されて連続した開口を形成する。保護層は、半導体基板の真上に第１部分を有し、且つ第１開口の側壁及び第２開口の側壁上に第２部分を有するように形成される。保護層は、第２開口の底部にある開口を有する。   According to another embodiment, the integrated circuit structure includes a semiconductor substrate. A shallow trench isolation (STI) pad extends from the bottom surface of the semiconductor substrate into the semiconductor substrate. The image sensor is disposed on the bottom surface of the semiconductor substrate. The plurality of low-k dielectric layers are disposed below the semiconductor substrate. The first non-low k dielectric layer is disposed below the low k dielectric layer. The metal pad is disposed below the first non-low k dielectric layer. The first opening extends from the upper surface of the semiconductor substrate to the upper surface of the STI pad. The second opening extends from the upper surface of the STI pad to the upper surface of the metal pad, and the first and second openings are connected to form a continuous opening. The protective layer is formed so as to have a first portion right above the semiconductor substrate and have a second portion on the side wall of the first opening and the side wall of the second opening. The protective layer has an opening at the bottom of the second opening.

また、他の実施形態に基づき、本方法は、半導体基板の背面から半導体基板をエッチングし、第１開口を形成するステップを含む。第１開口は、半導体基板のSTIパッドの上面でストップする。次いで、STIパッド、STIパッドの下方に配置される低k誘電体層、及び低k誘電体層の下方に配置される非低k誘電体層は、エッチングされて、第２開口を形成し、非低k誘電体層の下方に配置される金属パッドの上面は、第２開口を通過して露出される。第１及び第２開口は、連続した開口を形成する。保護層は、半導体基板の真上に形成され、保護層は、第１開口の側壁と底部及び第２開口の底部に延伸する。保護層の底部は、第２開口の底部から除去され、金属パッドを露出し、保護層の側壁は除去されない。   According to another embodiment, the method includes etching the semiconductor substrate from the back surface of the semiconductor substrate to form a first opening. The first opening stops at the upper surface of the STI pad of the semiconductor substrate. The STI pad, the low-k dielectric layer disposed below the STI pad, and the non-low-k dielectric layer disposed below the low-k dielectric layer are then etched to form a second opening; The top surface of the metal pad disposed below the non-low k dielectric layer is exposed through the second opening. The first and second openings form a continuous opening. The protective layer is formed immediately above the semiconductor substrate, and the protective layer extends to the side wall and bottom of the first opening and the bottom of the second opening. The bottom of the protective layer is removed from the bottom of the second opening, exposing the metal pad, and the sidewall of the protective layer is not removed.

本発明は、添付の図面と併せて後に続く詳細な説明と実施例を解釈することによって、より完全に理解されることができる。   The present invention can be more fully understood by interpreting the detailed description and examples that follow in conjunction with the accompanying drawings.

種々の実施形態に基づいた裏面照射イメージセンサのウエハのボンドパッド構造を製造する第１の中間段階の断面図である。FIG. 6 is a cross-sectional view of a first intermediate stage of manufacturing a wafer bond pad structure of a backside illuminated image sensor according to various embodiments. 種々の実施形態に基づいた裏面照射イメージセンサのウエハのボンドパッド構造を製造する第２の中間段階の断面図である。FIG. 7 is a cross-sectional view of a second intermediate stage of manufacturing a wafer bond pad structure for a backside illuminated image sensor according to various embodiments. 種々の実施形態に基づいた裏面照射イメージセンサのウエハのボンドパッド構造を製造する第３の中間段階の断面図である。FIG. 7 is a cross-sectional view of a third intermediate stage of manufacturing a wafer bond pad structure for a backside illuminated image sensor according to various embodiments. 種々の実施形態に基づいた裏面照射イメージセンサのウエハのボンドパッド構造を製造する第４の中間段階の断面図である。FIG. 6 is a cross-sectional view of a fourth intermediate stage of manufacturing a wafer bond pad structure for a backside illuminated image sensor according to various embodiments. 種々の実施形態に基づいた裏面照射イメージセンサのウエハのボンドパッド構造を製造する第５の中間段階の断面図である。FIG. 10 is a cross-sectional view of a fifth intermediate stage of manufacturing a wafer bond pad structure for a backside illuminated image sensor according to various embodiments. 種々の実施形態に基づいた裏面照射イメージセンサのウエハのボンドパッド構造を製造する第６の中間段階の断面図である。FIG. 10 is a cross-sectional view of a sixth intermediate stage of manufacturing a wafer bond pad structure for a backside illuminated image sensor according to various embodiments.

実施形態の製造および使用が以下に詳細に論じられる。しかしながら、本実施形態は、さまざまな特定の文脈において具現化され得る多くの適用可能な発明の概念を提供する。論じられる特定の実施形態は、単に例示するのみであり、本発明の範囲を限定するものではない。   The manufacture and use of the embodiments is discussed in detail below. However, this embodiment provides many applicable inventive concepts that can be embodied in a variety of specific contexts. The specific embodiments discussed are merely illustrative and are not intended to limit the scope of the invention.

種々の実施形態に基づいた裏面照射（BSI）イメージセンサデバイスのパッド構造及びその形成方法が提供される。BSIパッド構造を形成する中間段階が示される。実施形態の変化例が論じられる。さまざまな図及び例示的な実施形態をつうじて、同様の参照番号は同様の要素を指定するのに用いられる。   A pad structure of a backside illuminated (BSI) image sensor device and a method of forming the same are provided according to various embodiments. An intermediate stage of forming the BSI pad structure is shown. Variations of the embodiments are discussed. Throughout the various figures and exemplary embodiments, like reference numerals are used to designate like elements.

図１〜図６は、いくつかの実施形態に基づいたパッド構造の製造の中間段階の断面図を示している。図１は、ウエハ２２の一部であり得るイメージセンサチップ２０を示している。イメージセンサチップ２０は、結晶シリコン基板または他の半導体材料で形成された半導体基板であり得る半導体基板２６を含む。説明を通じて、表面２６Aは、半導体基板２６の前面として示され、表面２６Bは、半導体基板２６の背面として示される。光電性（photosensitive） MOS型トランジスタまたは光電性ダイオードでもよいイメージセンサ２４は、半導体基板２６の表面に形成される。よって、ウエハ２２は、イメージセンサのウエハであり得る。説明を通じて、イメージセンサがある側は、半導体基板２６の前面と表示され、反対側は、背面として示される。誘電パッド３６は、シャロートレンチアイソレーション（STI）パッドであることができ、半導体基板２６の上面（前面２６Aである）から半導体基板２６に延伸する。   1-6 show cross-sectional views of intermediate stages in the manufacture of a pad structure according to some embodiments. FIG. 1 shows an image sensor chip 20 that may be part of a wafer 22. The image sensor chip 20 includes a semiconductor substrate 26 which can be a crystalline silicon substrate or a semiconductor substrate formed of other semiconductor materials. Throughout the description, the surface 26 A is shown as the front surface of the semiconductor substrate 26 and the surface 26 B is shown as the back surface of the semiconductor substrate 26. An image sensor 24, which may be a photosensitive MOS transistor or a photodiode, is formed on the surface of the semiconductor substrate 26. Thus, the wafer 22 can be an image sensor wafer. Throughout the description, the side where the image sensor is located is indicated as the front side of the semiconductor substrate 26, and the opposite side is indicated as the back side. The dielectric pad 36 can be a shallow trench isolation (STI) pad and extends from the upper surface (which is the front surface 26A) of the semiconductor substrate 26 to the semiconductor substrate 26.

相互接続構造２８は、半導体基板２６上に形成され、イメージセンサチップ２０のデバイスを電気的接続するのに用いられる。相互接続構造２８は、半導体基板２６上に形成された層間絶縁層（ILD）２５を含み、コンタクトプラグ（図示されない）は、ILD２５に形成され得る。金属層は、誘電体層３０に金属線／パッド３２及びビア３４を含む。イメージセンサ２４は、金属層M１からMtopにある金属線／パッド３２及びビア３４に電気的に接続され得る。   The interconnect structure 28 is formed on the semiconductor substrate 26 and is used to electrically connect the devices of the image sensor chip 20. The interconnect structure 28 includes an interlayer dielectric layer (ILD) 25 formed on the semiconductor substrate 26, and contact plugs (not shown) can be formed in the ILD 25. The metal layer includes metal lines / pads 32 and vias 34 in the dielectric layer 30. Image sensor 24 may be electrically connected to metal lines / pads 32 and vias 34 in metal layers M1 to Mtop.

金属層は、M１、M２...及びMtopと標示され、金属層M１は、相互接続構造２８の底部金属層であり、金属層Mtopは、相互接続構造２８の上部金属層である。図示された実施形態では、４つの金属層があり、金属層Mtopは、M４である。しかしながら、ウエハ２２は、より多くの、またはより少ない金属層を含んでもよい。一実施形態では、金属層M１からMtopの金属線３２及びビア３４が形成されている誘電体層３０は、例えば、約３.０より低い、または約２.５より低い、低誘電率（low k）の値を有する低k誘電体層である。   The metal layers are labeled M1, M2 ... and Mtop, where the metal layer M1 is the bottom metal layer of the interconnect structure 28, and the metal layer Mtop is the top metal layer of the interconnect structure 28. In the illustrated embodiment, there are four metal layers, and the metal layer Mtop is M4. However, the wafer 22 may include more or fewer metal layers. In one embodiment, the dielectric layer 30 in which the metal lines M1 through Mtop of the metal lines 32 and vias 34 are formed has a low dielectric constant (low, for example, less than about 3.0 or less than about 2.5). a low-k dielectric layer having a value of k).

誘電体層３８は、上金属層Mtop上に形成される。誘電体層３８は、３.９より大きいk値を有する低k誘電体材料でない誘電体材料で形成され得る。一実施形態では、誘電体層３８は、非ドープケイ酸塩ガラス（USG）、ホウ素ドープケイ酸塩ガラス（BSG）、リンドープケイ酸塩ガラス（PSG）、ホウ素ドープリンケイ酸ガラス（BPSG）などの酸化物で形成される。誘電体層３８は、酸化ケイ素層及び酸化ケイ素層上の窒化ケイ素層でも形成されることができる。   The dielectric layer 38 is formed on the upper metal layer Mtop. Dielectric layer 38 may be formed of a dielectric material that is not a low-k dielectric material having a k value greater than 3.9. In one embodiment, the dielectric layer 38 is formed of an oxide such as undoped silicate glass (USG), boron doped silicate glass (BSG), phosphorus doped silicate glass (PSG), boron doped phosphosilicate glass (BPSG). Is done. The dielectric layer 38 can also be formed of a silicon oxide layer and a silicon nitride layer on the silicon oxide layer.

接着層４０は、誘電体層３８上に形成され、誘電体層３８の開口内に延伸し、金属層Mtopにある金属線３２に電気的接続する。一実施形態では、接着層４０は、タンタル、窒化タンタル、チタン、窒化チタンなどで形成される。接着層４０の上は、金属パッド４４A及び金属線４４Bを含む金属構造体４４で形成される。金属構造体４４は、アルミニウム、アルミニウム銅などを含むことができる。接着層４０は、誘電体層３８と金属構造体４４との間にあり、それと接触することができ、接着層４６は、タンタル、窒化タンタル、チタン、窒化チタンなどで形成される。接着層４０と４６及び金属構造体４４の形成は、第１接着層を形成する、第１接着層の上に金属層を形成する、金属層の上に第２接着層を形成する、且つ同じマスクを用いて第１接着層、金属層、及び第２接着層をパターン化することを含むことができる。よって、接着層４０と４６及び金属構造体４４は、それらのそれぞれの端部が互いに垂直に配置された端部を共有することができる。   The adhesive layer 40 is formed on the dielectric layer 38, extends into the opening of the dielectric layer 38, and is electrically connected to the metal wire 32 in the metal layer Mtop. In one embodiment, the adhesion layer 40 is formed of tantalum, tantalum nitride, titanium, titanium nitride, or the like. On the adhesive layer 40, a metal structure 44 including a metal pad 44A and a metal wire 44B is formed. The metal structure 44 can include aluminum, aluminum copper, and the like. The adhesive layer 40 is between and in contact with the dielectric layer 38 and the metal structure 44, and the adhesive layer 46 is formed of tantalum, tantalum nitride, titanium, titanium nitride, or the like. The adhesive layers 40 and 46 and the metal structure 44 are formed by forming a first adhesive layer, forming a metal layer on the first adhesive layer, forming a second adhesive layer on the metal layer, and the same. Patterning the first adhesive layer, the metal layer, and the second adhesive layer using a mask may be included. Thus, the adhesive layers 40 and 46 and the metal structure 44 can share an end portion in which their respective end portions are arranged perpendicular to each other.

保護層４７は、接着層４６と誘電体層３８上に形成される。誘電体層３８と同様に、保護層４７は、３.９より大きいk値を有する低k誘電体材料でない誘電体材料で形成され得る。一実施形態では、保護層４７は、非ドープケイ酸塩ガラス（USG）、ホウ素ドープケイ酸塩ガラス（BSG）、ホウ素ドープリンケイ酸ガラス（BPSG）などの酸化物で形成される。保護層４７は、例えば、酸化ケイ素層及び酸化ケイ素層上の窒化ケイ素層でも形成されることができる。保護層４７は、接着層４０と４６及び金属構造体４４を完全に密閉することができる。   The protective layer 47 is formed on the adhesive layer 46 and the dielectric layer 38. Similar to dielectric layer 38, protective layer 47 may be formed of a dielectric material that is not a low-k dielectric material having a k value greater than 3.9. In one embodiment, the protective layer 47 is formed of an oxide such as undoped silicate glass (USG), boron doped silicate glass (BSG), boron doped phosphosilicate glass (BPSG). The protective layer 47 can also be formed of, for example, a silicon oxide layer and a silicon nitride layer on the silicon oxide layer. The protective layer 47 can completely seal the adhesive layers 40 and 46 and the metal structure 44.

図２を参照すると、ウエハ２２は、反転され、ウエハ２２の下方にあるキャリア（図示されない）に接合される。よって、図１に表された特徴のそれぞれの上面は、底面となり、その逆もまた同様である。半導体基板２６は、図２に示されるように上向きである。背面研削は、例えば、ウエハ２２の厚さが約２０μmより小さい、または約１０μmより小さくなるまで、半導体基板２６を薄化するように行われる。その結果の半導体基板２６の背面２６Bが標示される。この厚さでは、光は、半導体基板２６の後側（その前側と反対である）から残りの半導体基板２６まで通過することができる。薄化の後、バッファ酸化層４８は、半導体基板２６の背面上に形成され得る。実施形態では、バッファ酸化層４８が異なる構造を有して、異なる材料から形成されてもよいが、バッファ酸化層４８は、酸化ケイ素層、酸化ケイ素層上の下部反射防止（BARC）層、及びBARC層上のもう１つの酸化物層を含む。フォトレジストであり得るマスクは、ウエハ２２上に形成され、次いでパターン化される。   Referring to FIG. 2, the wafer 22 is inverted and bonded to a carrier (not shown) below the wafer 22. Thus, the top surface of each of the features represented in FIG. 1 becomes the bottom surface, and vice versa. The semiconductor substrate 26 is upward as shown in FIG. The back grinding is performed, for example, so that the semiconductor substrate 26 is thinned until the thickness of the wafer 22 is smaller than about 20 μm or smaller than about 10 μm. The back surface 26B of the resulting semiconductor substrate 26 is marked. At this thickness, light can pass from the rear side of the semiconductor substrate 26 (opposite the front side) to the remaining semiconductor substrate 26. After thinning, the buffer oxide layer 48 may be formed on the back surface of the semiconductor substrate 26. In embodiments, the buffer oxide layer 48 may have a different structure and be formed from different materials, but the buffer oxide layer 48 includes a silicon oxide layer, a bottom anti-reflection (BARC) layer on the silicon oxide layer, and Includes another oxide layer on the BARC layer. A mask, which can be a photoresist, is formed on the wafer 22 and then patterned.

図３を参照すると、バッファ酸化層４８及び半導体基板２６は、エッチングされて開口５２を形成する。次いで、マスク５０が除去される。エッチングステップでは、STIパッド３６は、エッチストップ層として用いられ、エッチングは、STIパッド３６でストップする。よって、STIパッド３６の上面は、開口５２によって露出される。   Referring to FIG. 3, the buffer oxide layer 48 and the semiconductor substrate 26 are etched to form an opening 52. Next, the mask 50 is removed. In the etching step, the STI pad 36 is used as an etch stop layer, and the etching stops at the STI pad 36. Therefore, the upper surface of the STI pad 36 is exposed through the opening 52.

図４は、金属遮蔽層５５及びバッファ酸化層５６の形成を示している。実施形態では、金属遮蔽層５５の形成は、金属層の形成を含み、次いで、金属層をパターン化して、半導体基板２６の部分の上方に金属遮蔽層５５を残し、金属遮蔽層５５が金属層遮蔽層５５の直下にあるデバイス（図示されていない。例えばトランジスタ）の部分に到達する光をブロックする。金属遮蔽層５５は、アルミニウム及び／または銅を含み得る。金属遮蔽層５５の形成後、バッファ酸化層５６が形成される。バッファ酸化層５６は、バッファ酸化層４８と同様の材料で形成される。バッファ酸化層５６は、半導体基板２６の直上にある第１部分を含み、第２部分は、開口５２内に延伸する。第２部分は、半導体基板２６の側壁上の部分、及びSTI パッド３６の真上の部分を更に含む。   FIG. 4 shows the formation of the metal shielding layer 55 and the buffer oxide layer 56. In an embodiment, forming the metal shielding layer 55 includes forming a metal layer, and then patterning the metal layer to leave the metal shielding layer 55 above a portion of the semiconductor substrate 26, where the metal shielding layer 55 is a metal layer. It blocks light reaching the part of the device (not shown, eg, a transistor) that is directly under the shielding layer 55. The metal shielding layer 55 can include aluminum and / or copper. After the formation of the metal shielding layer 55, the buffer oxide layer 56 is formed. The buffer oxide layer 56 is formed of the same material as the buffer oxide layer 48. The buffer oxide layer 56 includes a first portion directly above the semiconductor substrate 26, and the second portion extends into the opening 52. The second portion further includes a portion on the sidewall of the semiconductor substrate 26 and a portion directly above the STI pad 36.

次に、図５に表されるように、フォトレジスト５８が形成されてパターン化され、STI パッド３６は、フォトレジスト５８をマスクとして用いてエッチングされる。よって、開口６０が形成される。注意するのは、金属層の詳細を図示するために、示された開口６０のアスペクト比は、物理的にウエハ上に形成される、実際の開口のアスペクト比よりも大幅に大きい。実際の開口は、開口６０の高さよりもかなり大きく、時に、何十倍も大きい水平寸法を有することがある。エッチングステップの間、低k誘電体層３０及び非低k誘電体材料３８もエッチングされ、エッチングは金属パッド４４Aでストップする。開口６０に露出された接着層４０の部分は、エッチングステップ中に除去され得る。よって、金属パッド４４Aは開口６０に露出される。次いでフォトレジスト５８は、除去される。結果として生じる構造では、開口５２及び６０は、連続した開口を形成する。   Next, as shown in FIG. 5, a photoresist 58 is formed and patterned, and the STI pad 36 is etched using the photoresist 58 as a mask. Therefore, the opening 60 is formed. Note that to illustrate the details of the metal layer, the aspect ratio of the opening 60 shown is significantly greater than the aspect ratio of the actual opening physically formed on the wafer. The actual opening is much larger than the height of opening 60 and sometimes has a horizontal dimension that is tens of times larger. During the etching step, the low-k dielectric layer 30 and the non-low-k dielectric material 38 are also etched, and the etching stops at the metal pad 44A. The portion of the adhesive layer 40 exposed in the opening 60 can be removed during the etching step. Therefore, the metal pad 44A is exposed to the opening 60. The photoresist 58 is then removed. In the resulting structure, openings 52 and 60 form a continuous opening.

図６は、酸化層（例えば酸化ケイ素層）及び酸化層上の窒化層（例えば窒化ケイ素層）で形成され得る保護層６２の形成を示している。保護層６２は、バッファ酸化層５６の上面に延伸し、開口５２及び６０内に延伸する。保護層６２は、開口６０の側壁上の部分を含むため、低k誘電体層３０が湿気から防止される。パターン化のステップが行わるため、開口６０の底部にある保護層６２の部分が除去されて金属パッド４４Aが露出される。また、保護層６２は、イメージセンサ２４の真上から除去されることができる。よって、光（曲線矢印７０で標示されている）は、バッファ酸化層４８／５６及び半導体基板２６を通過し、光を電子信号に変換するイメージセンサに到達する。   FIG. 6 illustrates the formation of a protective layer 62 that can be formed of an oxide layer (eg, a silicon oxide layer) and a nitride layer (eg, a silicon nitride layer) over the oxide layer. The protective layer 62 extends to the upper surface of the buffer oxide layer 56 and extends into the openings 52 and 60. Since the protective layer 62 includes a portion on the sidewall of the opening 60, the low-k dielectric layer 30 is prevented from moisture. Since the patterning step is performed, the portion of the protective layer 62 at the bottom of the opening 60 is removed to expose the metal pad 44A. The protective layer 62 can be removed from directly above the image sensor 24. Thus, the light (indicated by the curved arrow 70) passes through the buffer oxide layer 48/56 and the semiconductor substrate 26 and reaches the image sensor that converts the light into an electronic signal.

実施形態では、ワイヤボンディングが実行され、金属パッド４４Aに接合されるワイヤボンドバンプ（wire bond bump）６８を形成する。ワイヤボンドバンプ６８は、金、アルミニウムなどを含むことができる。ワイヤボンディングは、ウエハ２２がイメージセンサチップにカットされた後、行われることができる。結果として生じる構造では、ワイヤボンドバンプ６８は、金属パッド４４Aと物理的接触することができる。   In an embodiment, wire bonding is performed to form wire bond bumps 68 that are bonded to metal pads 44A. The wire bond bump 68 can include gold, aluminum, or the like. Wire bonding can be performed after the wafer 22 is cut into image sensor chips. In the resulting structure, the wire bond bump 68 can be in physical contact with the metal pad 44A.

本実施形態では、ワイヤボンドバンプ６８は、接着層４６上に更に位置される金属パッド４４Aに接合される。接着層４６は、保護層４７及び金属パッド４４Aの両方に対して良好な接着性を有する。よって、前記ボンディングは、従来のボンディングよりも良好な機械的強度を有する。従来のボンディングでは、ワイヤボンドバンプは、底部金属層M１の金属構造体上に形成され、金属構造体は、その劣った接着性により、且つ低k誘電体材料の脆弱性により、下方のエッチストップ層から剥離される可能性がある。   In the present embodiment, the wire bond bump 68 is bonded to the metal pad 44 </ b> A further positioned on the adhesive layer 46. The adhesive layer 46 has good adhesion to both the protective layer 47 and the metal pad 44A. Therefore, the bonding has better mechanical strength than the conventional bonding. In conventional bonding, wire bond bumps are formed on the metal structure of the bottom metal layer M1, and the metal structure has a lower etch stop due to its poor adhesion and the weakness of the low-k dielectric material. There is a possibility of peeling from the layer.

本実施形態及びそれらの利点が詳細に説明されてきたが、本開示の精神及び範囲を逸脱しない限りにおいては、当業者は、添付の請求の範囲によって定義されるように、本開示の精神および範囲を逸脱せずに、ここで種々の変更、代替、および改変をするだろう。また、本願の範囲は、本明細書中に述べられたプロセス、機械、製造、物質の組成、装置、方法、及びステップの特定の実施形態を限定することを意図するものではない。当業者は、ここで述べられた実施形態に応じて、実質的に同様の機能を実行するか、または実質的に同様の結果を達成する、現存の、または後に開発される、開示、プロセス、機械、製造、物質の組成、装置、方法、及びステップから、より容易に理解されることを認識するであろう。よって、添付の請求の範囲は、上述のプロセス、機械、製造、物質の組成、装置、方法、またはステップを含む。また、各請求の範囲は、個別の実施形態を構成し、各請求の範囲及び実施形態の組み合わせは、本発明の保護範囲である。   Although the present embodiments and their advantages have been described in detail, those skilled in the art will recognize the spirit and scope of the present disclosure as defined by the appended claims without departing from the spirit and scope of the present disclosure. Various changes, substitutions, and modifications will now be made without departing from the scope. In addition, the scope of the present application is not intended to limit the specific embodiments of the processes, machines, manufacture, material compositions, apparatus, methods, and steps described herein. Those of ordinary skill in the art will appreciate that existing, or later developed disclosures, processes, perform substantially similar functions, or achieve substantially similar results, depending on the embodiments described herein. It will be appreciated that it is more readily understood from machines, manufacture, material compositions, apparatus, methods and steps. Accordingly, the appended claims include any process, machine, manufacture, composition of matter, apparatus, method, or step described above. Each claim constitutes an individual embodiment, and the combination of each claim and embodiment is the protection scope of the present invention.

２０ イメージセンサチップ
２２ ウエハ
２４ イメージセンサ
２５ 層間絶縁層（ILD）
２６ 半導体基板
２６A、２６B 表面
２８ 相互接続構造
３０、３８ 誘電体層
３２ 金属線／パッド
３４ ビア
３６ 誘電パッド（シャロートレンチアイソレーション（STI）パッド）
４０、４６ 接着層
４４ 金属構造体
４４A 金属パッド
４４B 金属線４４
４７、６２ 保護層
４８、５６ バッファ酸化層
５０ マスク
５５ 金属遮蔽層
５６ バッファ酸化層
６８ ワイヤボンドバンプ
７０ 光
M１、M２、M３、M４、Mtop 金属層 20 Image sensor chip 22 Wafer 24 Image sensor 25 Interlayer insulating layer (ILD)
26 Semiconductor substrate 26A, 26B Surface 28 Interconnect structure 30, 38 Dielectric layer 32 Metal line / pad 34 Via 36 Dielectric pad (shallow trench isolation (STI) pad)
40, 46 Adhesive layer 44 Metal structure 44A Metal pad 44B Metal wire 44
47, 62 Protective layers 48, 56 Buffer oxide layer 50 Mask 55 Metal shielding layer 56 Buffer oxide layer 68 Wire bond bump 70 Light
M1, M2, M3, M4, Mtop Metal layer

Claims (10)

前面及び背面を含む半導体基板、
前記半導体基板の前記前面に配置される低k誘電体層、
前記低k誘電体層に配置される非低k誘電体層、
前記非低k誘電体層に配置される金属パッド、
前記半導体基板の背面から延伸し、前記半導体基板、前記低k誘電体層、及び低k誘電体層を貫通し、前記金属パッドの表面を露出する開口、及び
前記開口の側壁及び底部上に形成され、前記開口の底部は、前記金属パッドの前記露出された表面を部分的に覆う保護層を含む集積回路構造。 A semiconductor substrate including a front surface and a back surface;
A low-k dielectric layer disposed on the front surface of the semiconductor substrate;
A non-low k dielectric layer disposed on the low k dielectric layer;
A metal pad disposed on the non-low-k dielectric layer;
An opening extending from the back surface of the semiconductor substrate, penetrating the semiconductor substrate, the low-k dielectric layer, and the low-k dielectric layer, exposing the surface of the metal pad, and formed on the sidewall and bottom of the opening And the bottom of the opening includes a protective layer that partially covers the exposed surface of the metal pad. 前記半導体基板の前面から前記半導体基板内に延伸し、前記開口がそれを更に貫通する誘電パッド、及び
前記半導体基板の前記前面に配置されたイメージセンサを更に含む請求項１に記載の集積回路構造。 2. The integrated circuit structure according to claim 1, further comprising: a dielectric pad extending from the front surface of the semiconductor substrate into the semiconductor substrate, the opening further penetrating therethrough, and an image sensor disposed on the front surface of the semiconductor substrate. . 前記開口に配置されて、前記金属パッドに電気的接続され、前記金属パッドと物理的接触しているバンプを更に含む請求項１に記載の集積回路構造。   The integrated circuit structure of claim 1, further comprising a bump disposed in the opening, electrically connected to the metal pad, and in physical contact with the metal pad. 前記半導体基板の前記背面に金属遮蔽を更に含み、前記保護層が延伸し、前記金属遮蔽層を覆う請求項１に記載の集積回路構造。   The integrated circuit structure according to claim 1, further comprising a metal shield on the back surface of the semiconductor substrate, wherein the protective layer extends to cover the metal shield layer. 前記金属パッドと前記非低k誘電体層との間に接着層を更に含み、前記開口が前記接着層内に延伸する請求項１に記載の集積回路構造。   The integrated circuit structure of claim 1, further comprising an adhesive layer between the metal pad and the non-low k dielectric layer, wherein the opening extends into the adhesive layer. 半導体基板、
前記半導体基板の前面から前記半導体基板内に延伸するシャロートレンチアイソレーションパッド、
前記半導体基板の前記前面に配置されるイメージセンサ、
前記イメージセンサ及び前記半導体基板の前面の上方に配置された複数の誘電体層、
前記複数の誘電体層の上方に配置された金属パッド、
前記半導体基板の背面から前記前面に延伸し、前記シャロートレンチアイソレーションパッド及び前記複数の誘電体層を通過し、前記金属パッドの一部を露出する開口、及び
前記開口の側壁及び底部に形成され、前記開口の底部にある前記保護層が前記金属パッドの前記露出された部分を部分的に覆う保護層を含む集積回路構造。 Semiconductor substrate,
A shallow trench isolation pad extending into the semiconductor substrate from the front surface of the semiconductor substrate;
An image sensor disposed on the front surface of the semiconductor substrate;
A plurality of dielectric layers disposed above the front surface of the image sensor and the semiconductor substrate;
A metal pad disposed above the plurality of dielectric layers;
An opening extending from the back surface of the semiconductor substrate to the front surface, passing through the shallow trench isolation pad and the plurality of dielectric layers, exposing a part of the metal pad, and formed on a side wall and a bottom portion of the opening. An integrated circuit structure wherein the protective layer at the bottom of the opening includes a protective layer that partially covers the exposed portion of the metal pad. 前記複数の誘電体層は、前記半導体基板の前記前面上に少なくとも１つの低k誘電体層、及び前記少なくとも１つの低k誘電体層に第１非低k誘電体層を含む請求項６に記載の集積回路構造。   The plurality of dielectric layers may include at least one low-k dielectric layer on the front surface of the semiconductor substrate, and a first non-low-k dielectric layer on the at least one low-k dielectric layer. An integrated circuit structure as described. 前記第１非低k誘電体層上の第２非低k誘電体層、
前記金属パッドと前記第１非低k誘電体層との間の第１接着層、及び
前記金属パッドと前記第２非低k誘電体層との間の第２接着層を更に含む請求項７に記載の集積回路構造。 A second non-low k dielectric layer on the first non-low k dielectric layer;
The method further comprises: a first adhesive layer between the metal pad and the first non-low k dielectric layer; and a second adhesive layer between the metal pad and the second non-low k dielectric layer. An integrated circuit structure according to claim 1. 前面及び背面を含む半導体基板、
前記半導体基板の前記前面に配置される複数の誘電体層、
前記複数の誘電体層に配置される金属パッド、
前記半導体基板の背面から延伸し、前記半導体基板及び複数の誘電体層を貫通し、前記金属パッドの一部を露出する開口、及び
前記開口に形成され、前記金属パッドに電気的接続するバンプを含む裏面照射型イメージセンサデバイス。 A semiconductor substrate including a front surface and a back surface;
A plurality of dielectric layers disposed on the front surface of the semiconductor substrate;
Metal pads disposed on the plurality of dielectric layers;
An opening extending from a back surface of the semiconductor substrate, penetrating the semiconductor substrate and the plurality of dielectric layers, exposing a part of the metal pad, and a bump formed in the opening and electrically connected to the metal pad Including backside illuminated image sensor device. 前記バンプと前記複数の誘電体層との間に配置された保護層、
前記半導体基板の前記前面に形成され、前記複数の誘電体層によって覆われるイメージセンサ、
前記半導体基板の前記前面に形成され、前記開口がシャロートレンチアイソレーションを貫通するシャロートレンチアイソレーション、及び
前記半導体基板の背面に配置された金属遮蔽層を更に含む請求項９に記載の裏面照射型イメージセンサデバイス。 A protective layer disposed between the bump and the plurality of dielectric layers;
An image sensor formed on the front surface of the semiconductor substrate and covered by the plurality of dielectric layers;
10. The backside illumination type according to claim 9, further comprising: a shallow trench isolation formed on the front surface of the semiconductor substrate, wherein the opening penetrates a shallow trench isolation, and a metal shielding layer disposed on the back surface of the semiconductor substrate. Image sensor device.
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