JP2013038229A - Manufacturing method of electric device, manufacturing method of semiconductor substrate, formation substrate for electric device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an electric device capable of preventing electrostatic breakdown and being manufactured with high yield, a manufacturing method of a semiconductor substrate, a formation substrate for an electric device, and an electronic apparatus.SOLUTION: A manufacturing method of an electric device comprises the steps of: forming a first substrate by laminating a plurality of base materials composed of a resin material on a support body; peeling the support body from an element substrate; and sticking a second substrate so as to hold a functional element between itself and the element substrate. In a step of forming the element substrate, an electrode layer is disposed so as to be held between any two of the plurality of base materials, and a semiconductor element for driving the functional element is disposed so as to be held between any two of the plurality of base materials above the electrode layer or to be disposed on a surface of a substrate body.

Description

  The present invention relates to an electrical device manufacturing method, a semiconductor substrate manufacturing method, an electrical device forming substrate, and an electronic apparatus.

  In recent years, flexible display devices using a liquid crystal device, an organic EL display device, an electrophoretic display device, or the like as a display unit have become widespread. Patent Document 1 below discloses a flexible display device in which an adhesive layer and an electrolytic shielding plate are laminated on a substrate such as plastic and an active layer made of a thin film element is formed thereon.

  In Patent Document 2 below, a semiconductor substrate for a flexible display device is manufactured by laminating an organic insulating film, a semiconductor element, and an organic insulating film in this order on a glass substrate, and peeling the first organic insulating film from the glass substrate. Techniques to do this are disclosed.

JP 2011-9704 A Special table 2009-514244 gazette

  However, the above prior art has the following problems. In the device disclosed in Patent Document 1, since an FPC board on which external components such as an IC, a capacitor, and a resistor are mounted is usually connected to at least one side, the side to which the FPC board is connected cannot be bent. As a result, all four sides of the display device cannot be made flexible. In addition, in the manufacturing method disclosed in Patent Document 1, when an active layer formed on a glass substrate is peeled and transferred to a support substrate, it is used as a peeling layer using ablation of an amorphous silicon layer. There is a problem that the roughness is severe and the number of times the substrate can be reused is limited.

  In addition, the manufacturing technique disclosed in Patent Document 2 does not require a complicated multilayer film structure as in Patent Document 1, but peeling electrification occurs when the insulating film is peeled, and the semiconductor element is destroyed by static electricity. There is a problem that there is a risk of.

  The present invention has been made in view of such circumstances, and includes an electrical device manufacturing method, a semiconductor substrate manufacturing method, an electrical device forming substrate, and an electronic device that can prevent electrostatic breakdown and can be manufactured with high yield. One of the purposes is to provide.

  In order to solve the above problems, a method of manufacturing an electric device according to the present invention includes a step of forming a first substrate by laminating a plurality of base materials made of a resin material on a support, and from the first substrate. A step of peeling the support, and a step of attaching a second substrate so as to sandwich a functional element between the first substrate. In the step of forming the first substrate, The electrode layer is disposed so as to be sandwiched between any of the base materials, and is disposed above any of the plurality of base materials that are higher than the electrode layer or disposed on the surface of the first substrate. Thus, a semiconductor element for driving the functional element is provided.

  According to the method for manufacturing an electric device of the present invention, since the electrode layer is provided between the support substrate and the semiconductor element, the influence of peeling electrification generated when the element substrate is peeled from the support substrate on the semiconductor element. Can be suppressed. Further, since the element substrate is composed of a laminated structure of resin materials, the support substrate and the element substrate can be easily peeled off. Therefore, the surface of the support substrate after peeling is not roughened, the support substrate can be reused, and the manufacturing cost can be reduced. Therefore, it is possible to manufacture an electric device with high yield by preventing electrostatic breakdown due to peeling charging. The electric device thus manufactured has flexibility because a plurality of base materials made of a resin material are laminated.

In the method for manufacturing the electrical device, it is preferable that the support is peeled off after the second substrate is attached to the first substrate.
According to this configuration, since the element substrate is supported by the support when the counter substrate is attached, the element substrate can be easily handled, and the attachment accuracy of the substrate can be improved.

In the method for manufacturing the electrical device, in the step of forming the first substrate, the conductive portion that is electrically connected to the electrode layer is drawn out to the surface of the first substrate opposite to the support. Preferably it is formed.
According to this configuration, electrical conduction can be established with respect to the electrode layer embedded in the element substrate via the conductive portion.

Moreover, in the said manufacturing method of an electric apparatus, it is preferable to form the said electroconductive part in the corner | angular part of the arrangement | positioning area | region of the said functional element.
According to this configuration, the conductive portion is prevented from obstructing the arrangement of the functional elements.

In the method for manufacturing an electrical device, it is preferable that a plurality of the conductive portions are drawn out to the surface side of the first substrate opposite to the support.
According to this configuration, since a plurality of conductive portions are drawn out, the conductivity with respect to the conductive portions can be improved.

In the method for manufacturing the electric device, in the step of attaching the second substrate, the drive electrode provided on the inner surface side of the second substrate and driving the functional element is electrically connected to the conductive portion. It is preferable to do so.
According to this configuration, electrical conduction can be established between the drive electrode on the counter substrate side and the electrode layer embedded in the element substrate via the conductive portion.

In the method for manufacturing an electrical device, it is preferable that the semiconductor element and the electrode layer sandwiched between any of the plurality of base materials are electrically connected in the step of forming the first substrate. .
According to this configuration, since the semiconductor element and the electrode layer are electrically connected, electrostatic breakdown of the semiconductor element embedded in the element substrate can be reliably prevented.

Moreover, in the said manufacturing method of an electric apparatus, it is preferable to use an electronic component as the said semiconductor element clamped in either between several said base materials.
According to this configuration, a structure in which the electronic component is embedded in the element substrate can be obtained.

In the method for manufacturing the electric device, the functional element is preferably an electro-optical element.
According to this configuration, an electro-optical display device including an electro-optical element as an electric device can be manufactured.

  The method for producing a semiconductor substrate of the present invention comprises a step of forming a substrate body by laminating a plurality of base materials made of a resin material on a support, and a step of peeling the support from the substrate body. In the step of forming the substrate body, the electrode layer is disposed so as to be sandwiched between any of the plurality of base materials, and the upper layer is higher than the electrode layer. A semiconductor element is provided so as to be clamped or disposed on the surface of the substrate body.

  According to the method for manufacturing a semiconductor substrate of the present invention, since the electrode layer is provided between the support substrate and the semiconductor element, the influence on the semiconductor element of the peeling charge generated when the substrate body is peeled off from the support substrate. Can be suppressed. Further, since the substrate body is composed of a laminated structure of resin materials, the support substrate and the substrate body can be easily peeled off. Therefore, the surface of the support substrate after peeling is not roughened, the support substrate can be reused, and the manufacturing cost can be reduced. Therefore, it is possible to manufacture a semiconductor substrate with high yield by preventing electrostatic breakdown due to peeling charging. The semiconductor substrate manufactured in this way is excellent in flexibility because a plurality of base materials made of a resin material are laminated.

  The substrate for forming an electric device of the present invention includes a support, a substrate body provided on the support and laminated with a plurality of flexible base materials, a surface of the substrate body, or the plurality of substrates. A semiconductor element provided between the materials, and an electrode layer embedded between the plurality of base materials and below the semiconductor element and embedded in the substrate body. And

  According to the electric device forming substrate of the present invention, since the electrode layer is provided between the support substrate and the semiconductor element, the influence of the peeling electrification generated when the substrate body is peeled from the support substrate on the semiconductor element. Can be suppressed. The semiconductor substrate is flexible because it is formed by laminating a plurality of base materials made of a resin material, but is excellent in handleability because it is supported by a support.

Moreover, in the said electric apparatus formation board | substrate, it is preferable that the electroconductive part electrically connected to the said electrode layer is pulled out on the surface opposite to the said support body of the said substrate main body.
According to this configuration, it is possible to establish electrical continuity with the electrode layer embedded in the substrate body via the conductive portion.

  An electronic apparatus according to the present invention includes an electric device manufactured by the method for manufacturing the electric device.

  According to the electronic device of the present invention, the electronic device itself is highly reliable because it includes the electrical device that is manufactured with high yield while preventing electrostatic breakdown.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows schematically the whole structure of the electrophoretic display apparatus which is 1st Embodiment of an electric apparatus, Comprising: (a) is AA sectional drawing of (b). BB arrow sectional drawing of FIG.1 (b). (A)-(c) is a figure for demonstrating the manufacturing process of an electrophoretic display device. FIG. 4 is a diagram for explaining a manufacturing process of the electrophoretic display device following FIG. 3. FIG. 5 is a view for explaining a manufacturing process of the electrophoretic display device following FIG. 4. FIG. 6 is a diagram for explaining a manufacturing process of the electrophoretic display device following FIG. 5. FIG. 7 is a diagram for explaining a manufacturing process of the electrophoretic display device following FIG. 6. FIG. 8 is a diagram for explaining a manufacturing process of the electrophoretic display device following FIG. 7. The figure for demonstrating the manufacturing process which concerns on the modification of the order which peels a support plate. The figure which shows the structure of the electrophoretic display apparatus which concerns on the 1st modification of an electric apparatus. Sectional drawing which shows the structure of the liquid crystal display device which concerns on the 2nd modification of an electric apparatus. Sectional drawing which shows the structure of the organic electroluminescence display which concerns on the 3rd modification of an electric apparatus. Sectional drawing which shows the structure which concerns on another form of the drive circuit layer of an organic electroluminescence display. Sectional drawing which shows the whole structure of the element substrate which concerns on 2nd Embodiment. Sectional drawing which shows the whole structure of the element substrate which concerns on 3rd Embodiment. The figure which shows the structure which concerns on the electrophoretic display apparatus as an electric apparatus provided with the element substrate which concerns on 4th Embodiment. The figure for demonstrating operation | movement of the electrophoretic display device which concerns on 4th Embodiment. The figure for demonstrating operation | movement of the electrophoretic display apparatus which concerns on the modification of 4th Embodiment. The figure which shows schematic structure of the detection element which applied the structure of the electric apparatus which concerns on 1st Embodiment. The figure which shows the structure which concerns on the modification of the electrophoretic display device which concerns on 1st Embodiment. (A)-(c) is a figure which shows the structure of an electronic device.

  Embodiments of the present invention will be described below with reference to the drawings. In each drawing used for the following description, the scale of each member is appropriately changed to make each member a recognizable size.

(First embodiment)
In the present embodiment, a case will be described in which an electric device manufactured by the method for manufacturing an electric device of the present invention is applied to an electrophoretic display device. In the description of the present embodiment, a method for manufacturing an element substrate (semiconductor substrate) constituting the electrophoretic display device is also described.

  First, a configuration when applied to an electrophoretic display device as an embodiment of the electric device will be described. FIG. 1 is a diagram schematically showing an overall configuration of an electrophoretic display device, and FIG. 1A is a cross-sectional view taken along line AA in FIG. FIG. 2 is a cross-sectional view showing a specific configuration of the electrophoretic display device, and shows one pixel as an image display area.

As shown in FIGS. 1A and 1B, an electrophoretic display device (electric device) 100 includes an element substrate (semiconductor substrate) 300 made of a semiconductor device, and a counter substrate 310 disposed to face the element substrate 300. The electrophoretic layer (functional element) 32A sandwiched between the flexible element substrate 300 and the counter substrate 310 is configured.
Between the peripheral portions of the element substrate 300 and the counter substrate 310, a sealing material 65 is provided so as to surround the periphery of the electrophoretic layer 32A in order to ensure moisture resistance to the electrophoretic layer 32A and to hold the electrophoretic layer 32A. Is arranged.

  In the present embodiment, a back electrode (electrode layer) 19 having a rectangular shape in plan view is embedded in a first substrate (substrate body) 30 constituting the element substrate 300. The back electrode 19 has a rectangular shape in plan view, and is disposed on the back side of the first substrate 30. The back electrode 19 is located at the four corners thereof, and is connected to the element substrate 300 via a connection portion 39 embedded in the first substrate 30 and a vertical conduction terminal 49 provided on the surface of the first substrate 30. And a vertical conduction part (conductive part) 33 disposed between the counter substrate 310 and the counter substrate 310.

The vertical conduction part 33 exists outside the electrophoretic layer 32 </ b> A and inside the sealing material 65, and has one end connected to the vertical conduction terminal 49 and the other end connected to the counter electrode (second electrode) 37. Yes. Thereby, the back electrode 19 and the counter electrode 37 are electrically connected. The counter electrode 37 is a common electrode and is used to drive the electrophoretic layer 32A.
Next, the configuration of the electrophoretic display device of the present embodiment will be specifically described.

  As shown in FIG. 2, the element substrate 300 mainly includes a first substrate 30 and a drive circuit layer 24 formed on the surface thereof, and in this embodiment, a back electrode embedded in the first substrate 30. 19. The drive circuit layer 24 includes a control transistor, a resistor, and a capacitor as will be described later.

  The first substrate 30 is formed by laminating three base materials 30A, 30B, and 30C having flexibility, and the back surface electrode 19, a gate driver IC (semiconductor element, electronic component) 51, and various types are formed on the base materials 30A to 30C. Wiring etc. are embedded.

The gate driver IC 51 is electrically connected to the back surface electrode 19 through a common potential line 51a embedded in the contact hole H1, and is given a reference potential of the gate driver IC 51. Further, the gate driver IC 51 is electrically connected to the storage capacitor line 69 constituting the storage capacitor Cs included in the drive circuit layer 24 via the output line 51b embedded in the contact hole H2. Although not shown, each output of the gate driver IC 51 is connected to each scanning line 66. Each of the base materials 30A to 30C is a flexible substrate made of polyimide having a thickness of 20 μm.
In addition to this, circuit components such as an IC, a battery, and an antenna for driving the drive circuit layer 24 and a part of the drive circuit layer 24 can be embedded in the element substrate 300. There is no need to connect a printed circuit board or the like so as to protrude from the element substrate 300 as in the conventional electrophoresis apparatus. For this reason, there is no protrusion, and an electrophoresis apparatus like an underlay can be realized.

  Since the user views the image from the counter substrate 310 side, the first substrate 30 may be a non-transparent substrate. In addition, if the 1st board | substrate 30 (base material 30A-30C) in which these electronic components are embedded is formed with a non-transparent board | substrate, by providing light-shielding property to the base material around an electronic component, the electronic component by light leakage Malfunction can be suppressed.

  The drive circuit layer 24 includes a pixel electrode 35 for each of a plurality of pixels arranged in a matrix that forms the image display region 5 of the electrophoretic display device 100, and a control transistor (semiconductor element) that controls the pixel electrode 35. It has TRs and holding capacitor Cs, and is a general 1T1C equivalent circuit. Such a pixel is provided at each of the intersections of the plurality of scanning lines 66 and the plurality of data lines 68. In the control transistor TRs, a part of the scanning line 66 made of Al arranged to face the channel region of the semiconductor layer 41a functions as the gate electrode 41e. The film thickness of the gate electrode 41e is 200 nm. The control transistor TRs is an organic TFT having a bottom gate / top contact structure and having an organic semiconductor layer.

  The drive circuit layer 24 is provided on the first substrate 30. On the surface of the first substrate 30, a plurality of scanning lines 66, a plurality of data lines 68 and a plurality of scanning lines arranged in the image display area 5 are provided. A plurality of storage capacitor lines 69 are formed, and in the present embodiment, upper and lower conductive terminals 33 arranged at the four corners of the first substrate 30 in the image display region 5 are further formed.

  A gate insulating film 41 b is provided on the entire surface of the first substrate 30 so as to cover the scanning line 66 (gate electrode 41 e), the plurality of storage capacitor lines 69, and the upper and lower conductive terminals 49. The gate insulating film 41b is made of polyimide having a thickness of 300 nm, and a semiconductor layer 41a in which an oxide semiconductor layer made of a-IGZO having a thickness of 50 nm is provided in an island shape is formed. A source electrode 41c and a drain electrode 41d made of Al having a thickness of 200 nm are further provided on the gate insulating film 41b so as to partially run on the peripheral edge of the semiconductor layer 41a. The source electrode 41c and the drain electrode 41d are provided with a titanium nitride film having a surface with a thickness of 5 nm. A first protective film 42 made of a silicon nitride film having a thickness of 400 nm is provided thereon, and a second protective film 43 made of photosensitive acrylic having a thickness of 1 μm is provided thereon. Further, the pixel electrode 35 made of ITO having a thickness of 50 nm is electrically connected to the lower drain electrode 41d through a contact hole H4 penetrating the thickness direction of the first protective film 42 and the second protective film 43. ing. The contact hole H4 is formed by not forming the protective layer 42 in the formation region. The control transistor TRs is formed by sequentially forming a thin film from the first substrate 30 side.

  The data line 68 to which the image signal is supplied is electrically connected to the source electrode 41c of the control transistor TRs. Here, the image signals to be written to the data lines 68 may be supplied line-sequentially, or may be supplied to the adjacent data lines 68 for each group or for each data line.

  A scanning line 66 is electrically connected to the gate electrode 41e of the control transistor TRs, and a selection signal (scanning signal) is sequentially applied in a pulse manner at a predetermined timing.

  The pixel electrode 35 formed on the surface of the first substrate 30 is electrically connected to the drain electrode 41d of the control transistor TRs. By opening the control transistor TRs, which is a switching element, the data electrode 68 The supplied image signal is written to the electrophoretic layer 32A at a predetermined timing.

  The electrophoretic layer 32 </ b> A has a plurality of microcapsules 20. The microcapsule 20 is a substantially spherical capsule in which two types of electrophoretic particles (positively charged particles 26 and negatively charged particles 27) that are positively or negatively charged and a dispersion medium 21 are enclosed. In the electrophoretic layer 32A, the electrophoretic particles (positively charged particles 26 and negatively charged particles 27) move to the counter electrode 37 side or the pixel electrode 35 side due to a potential difference between the pixel electrode 35 and the counter electrode 37 formed by the storage capacitor Cs. Thus, an image is formed according to the distribution state of the electrophoretic particles visually recognized when the electrophoretic layer 32A is viewed from the counter substrate 310 side.

  The storage capacitor Cs is formed between the drain electrode 41d of the control transistor TRs and the storage capacitor line 69 that supplies a potential.

  It should be noted that the present invention is not limited to an example using a capsule-type electrophoretic material. For example, there may be a partition that partitions the space between the first substrate 30 and the second substrate 31, such as a partition wall type. There may be no partition. Alternatively, a particle configuration other than black and white particles charged to different polarities may be employed.

  The back surface electrode 19 is disposed on the base material 30A, and is patterned on the surface of the base material 30C and the connection part 39 formed in the contact hole H3 that relays the base materials 30B to 30C and penetrates these thickness directions. The relay terminal 39 </ b> A is electrically connected to the vertical conduction portion 33. The vertical conduction portion 33 is embedded in a contact hole H5 that penetrates the drive circuit layer 24, and is electrically connected to the relay terminal 39A, and the first connection portion 33a is interposed between the first connection portion 33a and the first connection portion 33a. A second connection portion 33b for electrically connecting the back electrode 19 and the counter electrode 37;

  Although not shown, a data driver IC (not shown) that outputs an image signal to the data line 68 and a controller IC that controls these driver ICs are provided between the base material 30B and the base material 30C. (Not shown) are embedded.

  The output side of the data driver IC is connected to a plurality of data lines 68 via connection wiring (not shown) embedded in the first substrate 30, and a timing for supplying a scanning signal to each data line 68. To control. On the other hand, the input side is connected to the output side of the controller IC via connection wiring. The same applies to the gate driver IC 51.

  As described above, according to the electrophoretic display device 100 according to the present embodiment, the first substrate 30 within the range of the image display area 5 is arranged without arranging the gate driver IC 51 and the data driver IC around the image display area 5. By embedding in the frame, the frame width, that is, the non-display area 6 can be narrowed.

The image display region 5 is provided with the four vertical conduction portions 33 described above, and the four vertical conduction portions 33 allow the back electrode 19 on the element substrate 300 side and the counter electrode 37 on the counter substrate 310 side to be connected. Electrically connected.
The non-display area 6 is provided with a sealing material 65 made of an epoxy resin so as to fill a gap between the element substrate 300 and the counter substrate 310, and the sealing material 65 seals the periphery of the electrophoretic layer 32A. ing.

  As the second connection portion 33b of the vertical conduction portion 33, an Ag or Cu metal paste formed in a predetermined shape, a material in which a spherical plastic surface is coated with a metal, or an anisotropic material is used. A conductive film or the like is used. The vertical conduction portions 33 are provided at the four corners of the image display region 5 in FIG. 1B, but are not limited thereto. It may be one or more of the four corners, or may be provided in an elongated shape along the side.

  The counter substrate 310 is formed by forming a counter electrode 37 made of carbon nanotubes having a thickness of 0.1 μm on a transparent second substrate 31 made of PET having a thickness of 0.2 mm. A transparent substrate is used as the second substrate 31 to observe the migration layer 32A.

  In the electrophoretic display device 100 of the present embodiment, the back electrode 19 and the counter electrode 37 have the same voltage because the back electrode 19 is electrically connected to the counter electrode 37. The back electrode 19 is formed in a size corresponding to at least the image display area 5, and an electronic component such as a control transistor TRs is installed in a space formed between the back electrode 19 and the counter electrode 37. With such a configuration, electronic components such as the control transistor TRs are shielded by the back electrode 19 and the counter electrode 37 that are electrically connected to each other, so that failure due to static electricity from the outside can be suppressed. In other words, even if a high potential is applied to the counter electrode 37 and the back electrode 19, the high voltage is not applied to the control transistor TRs, so that it is not easily destroyed. Furthermore, it functions as an EM shield for suppressing destructive electromagnetic (EM) radiation.

  In the configuration of this embodiment, since the vertical conduction portions 33 are arranged only at the four corners of the element substrate 300, the four sides of the electrophoretic display device 100 are not shielded, but the distance between the counter electrode 37 and the back electrode 19 is several. Because it is as short as 10 μm, static electricity does not creep in from the side.

  Further, in the present embodiment, the sealing material 65 made of epoxy resin is used, but other organic materials such as acrylic may be used. In addition to black and white particles, color particles may be used as the charged particles. Moreover, the number of the vertical conduction parts 33 is not limited to four. Further, the shape is not limited to that described above, and the shape may be linear. Furthermore, the configuration of the control transistor TRs is not limited to the bottom gate structure. As the control transistor TRs, either an organic or inorganic transistor may be used, and a configuration such as a positive stagger or a coplanar structure may be used. The materials used for the control transistor TRs, the first substrate 30, the second substrate 31, and the counter electrode 37 are not limited to those described above.

  In addition, the material used for the first substrate 30 constituting the element substrate 300 and the second substrate 31 of the counter substrate 310 may be a flexible polyester or other organic or inorganic material. In addition, paper phenol, paper epoxy, glass composite, glass epoxy, thin glass, Teflon (registered trademark), ceramics, composite materials thereof, and other organic and inorganic materials may be used as long as they do not have flexibility. Good.

  The material used for the first substrate 30 and the second substrate 31 may be a stretchable material. Thereby, the flexibility including an expansion-contraction state is realizable. For example, a soft organic material such as acrylic, a non-woven fabric coated with these materials, a woven fabric, or rubber may be used. With elasticity, the electro-optical device is not only installed on a material with a large deformation like a cloth such as clothes or a complicated surface shape so that there is no gap, but also when it is deformed and used. Can be reduced. Further, the number of base materials constituting the first substrate 30 is not limited to three as described above. Further, the material of the control transistor TRs is not limited to the above. In addition, the material used for the pixel electrode 35, the counter electrode 37, the scanning line 66, the data line 68, the connection wiring 22, and the like is not limited to the above metal materials, but other metals, metal pastes such as Cu paste, carbon nanotubes, etc. A conductive material, an inorganic conductive material, an organic conductive material, a transparent electrode, or a conductive paste may be used. Organic and inorganic materials other than those described above may also be used for the insulating film and the protective film.

  Next, the manufacturing method of the electrophoretic display device 100 and the manufacturing method of the electric device and the manufacturing method of the semiconductor substrate of the present invention will be described with reference to FIGS.

  First, as shown in FIG. 3A, a polyimide forming solution (for example, a polyamic acid solution) is applied to a support plate 200 made of a glass substrate having a thickness of 0.6 mm and fired (for example, 180 ° C.) to obtain a thickness. A 20 μm base material 30A is formed. Here, as a method of disposing the polyimide forming solution on the base material 30A, a coating method, a printing method, or the like can be exemplified.

  Subsequently, as shown in FIG. 3B, an Al layer having a thickness of 200 nm is formed on the entire surface of the base material 30A by a sputtering method, and patterned to a desired shape by photoetching, whereby the back surface is formed on the base material 30A. The electrode 19 is formed.

  Subsequently, as shown in FIG. 3C, the polyimide forming solution is applied again on the base material 30 </ b> A so as to cover the back electrode 19 and baked to form a base material 30 </ b> B having a thickness of 20 μm. Thereby, the back surface electrode 19 will be arrange | positioned in the state clamped between the base material 30A and the base material 30B.

  Subsequently, as shown in FIG. 4A, a contact hole H1 is formed to allow the back electrode 19 to face inside at a predetermined position in the base material 30B. As a method of forming the contact hole H1, a photo etching method, a drill method, or other methods may be used. Subsequently, as shown in FIG. 4B, a common potential line 51a embedded in the contact hole H1 is formed by depositing Al on the base material 30B by sputtering and patterning by photo-etching. Note that, as a part of the common potential line 51a, a connection terminal may be formed on the base material 30B, and the connection reliability with the gate driver IC 51 described later may be increased to improve conduction reliability. Subsequently, as shown in FIG. 4C, the gate driver IC 51 is disposed on the base material 30B and is electrically connected to the common potential line 51a. A bump may be formed on the gate driver IC 51, or an anisotropic conductive film may be used at the time of connection. In addition, when the gate driver IC 51 is mounted, a data driver IC and a controller IC are also mounted in a region (not shown) on the base material 30B.

  Subsequently, as shown in FIG. 5A, a polyimide forming solution is applied again on the base material 30B so as to cover the gate driver IC 51 and baked to form a base material 30C having a thickness of 20 μm. Thereby, the data driver IC and the controller IC together with the gate driver IC 51 are also arranged in a state of being sandwiched between the base material B and the base material 30C.

  Subsequently, as shown in FIG. 5B, a contact hole H2 is formed at a predetermined position on the base material 30C so that the gate driver IC 51 faces inside. Simultaneously with the formation of the contact hole H2, the contact hole H3 is formed so that the back surface electrode 19 is exposed to a predetermined position in the base materials 30B and 30C. The formation method is the same as in FIG.

  Subsequently, as shown in FIG. 5C, an Al film is formed on the base material 30C by a sputtering method and patterned by a photoetching method to form the connection portion 39 and the contact hole H2 embedded in the contact hole H3. A buried output line 51b is formed. At this time, on the base material 30C, the relay terminal 39A connected to the connecting portion 39, the storage capacitor line 69 connected to the output line 51b, the scanning line 66, and a gate constituted by a part of the scanning line 66. An electrode 41e is formed.

  Subsequently, as illustrated in FIG. 6A, for example, a polyimide having a thickness of 300 nm is formed on the base material 30 </ b> C by a coating method to obtain the gate insulating film 41. The gate insulating film 41 is formed so as to cover the relay terminal 39A and the storage capacitor line 69. Then, an oxide semiconductor layer made of a-IGZO is formed with a thickness of 50 nm on the gate insulating film 41 by a sputtering method, and patterned into an island shape by a photoetching method, thereby forming a semiconductor layer 41a.

  Subsequently, as shown in FIG. 6B, an Al film having a thickness of 200 nm and a titanium nitride film having a thickness of 5 nm are formed by sputtering on the gate insulating film 41 so as to cover the semiconductor layer 41a, and then by photo etching. The source electrode 41c and the drain electrode 41d are formed by patterning. At this time, the data lines 68 constituting the source electrode 41c are also simultaneously formed in a region (not shown) on the gate insulating film 41.

  Note that the source electrode 41c and the drain electrode 41d are formed so as to partially ride on the peripheral edge of the semiconductor layer 41a. The drain electrode 41d is formed to face the storage capacitor line 69 with the gate insulating film 41 interposed therebetween. As a result, the storage capacitor Cs is formed by the drain electrode 41 d sandwiching the gate insulating film 41 and the storage capacitor line 69. Note that it is preferable to form a thin film such that the thickness of the gate insulating film 41 is selectively 1 μm or less at a portion where the storage capacitor Cs is formed.

  Subsequently, as shown in FIG. 6C, a non-single-crystal silicon nitride film having a thickness of 400 nm is formed on the gate insulating film 41 so as to cover the source electrode 41c and the drain electrode 41d by, for example, a CVD method. Thus, the first protective film 42 is formed.

  Subsequently, as shown in FIG. 7A, a photosensitive acrylic material is applied on the first protective film 42 with a thickness of 1 μm to form a second protective film 43. The second protective film 43 is also for planarizing the surface of the first protective film 42. Then, a contact hole H4 is formed through the first protective film 42 and the second protective film 43 by photolithography techniques such as exposure and development to allow the drain electrode 41d to face inside. Simultaneously with the formation of the contact hole H4, a contact hole H5 that penetrates the first protective film 42, the second protective film 43, and the gate insulating film 41b to expose the relay terminal 39A is formed. The formation method is the same as in FIG.

  Subsequently, as shown in FIG. 7B, the pixel electrode 35 made of ITO having a thickness of 50 nm is electrically connected to the drain electrode 41d by being buried in the contact hole H4 by sputtering and photoetching. Form. In addition, the first connection portion 33a electrically connected to the relay terminal 39A is formed by being buried in the contact hole H5 simultaneously with the formation of the pixel electrode 35.

  Thus, the element substrate 300 including the first substrate 30 in which electronic components such as the gate driver IC 51 are embedded is manufactured on the support plate 200. That is, the electric device forming substrate 150 can be obtained by the above manufacturing process. The electric device forming substrate 150 is used to configure various electric devices as will be described later.

Subsequently, as shown in FIG. 8, the support plate 200 is peeled from the element substrate 300. For example, the support plate 200 is peeled while the element substrate 300 side is supported by a substrate support (not shown). In the present embodiment, as shown in FIG. 3A, the interface between the support plate 200 and the element substrate 300 (base material 30A) is an interface between an inorganic material and an organic material, and no alloy layer is formed. By applying a force to the interface between 300 and the support plate 200, both can be easily separated. Note that the peelability may be improved by applying energy such as ultrasonic waves, laser, heat, or the like to the interface between the element substrate 300 and the support plate 200 in advance.
The support plate 200 may be made of an inorganic material other than glass or an organic material that can be easily separated from the first substrate.

  Incidentally, it is generally known that when two objects are peeled, peeling electrification occurs, and the control transistor TRs may be destroyed by this charging. On the other hand, according to the configuration according to the present embodiment, the solid-shaped back electrode 19 is provided between the support plate 200 and the control transistor TRs, which forms a common potential. Even when peeling electrification occurs, the voltage applied to the source electrode 41c, the gate electrode 41e, and the drain electrode 41d of the control transistor TRs with respect to the common potential is always constant only by changing the common potential. TRs can be prevented from being destroyed.

  Further, in the element substrate 300 according to the present embodiment, electronic components such as the gate driver IC 51 are embedded therein, and the ground potential of the gate driver IC 51 is electrically connected to the back surface electrode 19, so that control is performed. Similar to the transistor TRs, even when peeling electrification occurs, it can be prevented from being electrostatically broken like the control transistor TRs. In addition, not only the peeling process of the support plate 200 but also electrostatic discharge due to peeling charging (for example, peeling charging when peeling the element substrate 300 from the substrate support) in other manufacturing processes can be prevented.

  Further, according to the present embodiment, since the support plate 200 is peeled only by applying a force to the interface between the element substrate 300 and the support plate 200, the surface of the support plate 200 is not roughened. Therefore, the support plate 200 can be reused, and as a result, the manufacturing cost of the element substrate 300 can be reduced.

The counter substrate 310 is attached to the element substrate 300 obtained by the above process. At this time, the counter electrode 37 of the counter substrate 310 is electrically connected to the back electrode 19 of the element substrate 300 via the second connection portion 33b. Then, the electrophoretic layer 32A is injected between the counter substrate 310 and the element substrate 300, and sealed with a sealing material 65 made of epoxy resin so as to fill a gap between the element substrate 300 and the counter substrate 310. As described above, the electrophoretic display device 100 can be manufactured.
Further, the electrophoretic layer 32A may be introduced into both substrates by other methods instead of injection. For example, the counter substrate 310 may be bonded after the electrophoretic layer 32 </ b> A is applied on the element substrate 300.

  Note that the element substrate 300 can be formed by the above method, but the above is an example, and other methods may be used for the material, the thickness of each member, and the formation method. For example, the control transistor TRs may be formed using a coating method or a printing method.

Further, in the method of manufacturing the electrophoretic display device 100, the electrophoretic display device 100 is manufactured by attaching the counter substrate 310 to the element substrate 300 after peeling from the support plate 200 to form the element substrate 300 alone. As an example, after forming the electrophoretic display device 100 on the support plate 200 by attaching the counter substrate 310 to the electric device forming substrate 150 that is not peeled off from the support plate 200 as shown in FIG. The support plate 200 may be peeled off from the electrophoretic display device 100. In this way, since the electric device forming substrate 150 is in a state where the flexible element substrate 300 is adhered to the rigid support plate 200, handling (handling) during the manufacturing process becomes easy. Thus, the bonding accuracy of the substrates can be improved, and the manufacturing efficiency and reliability of the electrophoretic display device can be improved.
Moreover, although IC was hold | maintained between the base material B and the base material C in the above description, a place is not restricted here. In addition, other electronic components such as a battery, an antenna, and a capacitor can be held at arbitrary positions between the substrates constituting the first substrate 30.

(First modification)
FIG. 10 is a cross-sectional view illustrating a configuration of an electrophoretic display device according to a first modification of the electric device including the element substrate 300. The difference between the configuration according to this modification and the configuration according to the first embodiment is the structure of the electrophoretic layer 32 </ b> A sandwiched between the substrates 300 and 310. Specifically, the electrophoretic display device 101 according to the present modification includes black particles 126 (positively charged particles) made of carbon and oxidized in silicon oil as an electrophoretic layer instead of the microcapsules 20 of the above embodiment. Dispersed with white particles 127 (negatively charged particles) made of titanium.

  As described above, as an electric apparatus using the element substrate 300 according to the above-described embodiment, an electrophoretic display apparatus in which an electrophoretic material that does not use partitions such as partition walls or microcapsules is sandwiched between the substrates can be applied.

(Second modification)
FIG. 11 is a cross-sectional view illustrating a configuration of a liquid crystal display device according to a second modification of the electric device including the element substrate 300. As shown in FIG. 11, the liquid crystal display device (electric device) 102 employs a liquid crystal layer (functional element) 32B instead of the electrophoretic layer of the electrophoretic display device described above. In the present embodiment, the same reference numerals are given to the same configurations and members as those in the above embodiment, and the description thereof is omitted or simplified.

  In the liquid crystal display device 102, the vertical conduction part 33 (the first connection part 33a and the second connection part 33b) is made of silver paste. Also in this embodiment, the vertical conduction parts 33 are provided at the four corners of the element substrate 300, and the sealing material 65 made of epoxy resin is provided so as to surround the vertical conduction part 33.

  In the liquid crystal display device 102 of the present embodiment, the back electrode 19 and the counter electrode 37 have the same voltage because the back electrode 19 is electrically connected to the counter electrode 37 as in the above embodiment. The space surrounded by the counter substrate 310 and the back electrode 19 constitutes a substantial shield space that prevents the influence of external static electricity.

  Therefore, the liquid crystal display device 102 can prevent a potential difference from being applied to the control transistor TRs, the control transistor TRs, and the like in the shield space even if the liquid crystal display device 102 is lifted from a desk or wiped a surface such as a display surface. Therefore, the control transistor TRs and the control transistor TRs in the shield space can be protected from electrostatic breakdown.

  Also in the liquid crystal display device 102 of the present embodiment, since the electrode having the same potential as the back electrode 19, specifically, the counter electrode 37, the vertical conduction portion 33, and the like have a structure that is not exposed to the outside, these electrodes are external. The contact with the electric potential reduces the risk of current flowing between the outside. Moreover, since the counter electrode 37 and the vertical conduction part 33 are not exposed to the outside, occurrence of problems such as corrosion is suppressed.

  The above configurations and materials are examples, and other configurations, materials, and the like can be used. For example, the vertical conduction portion 33 may be provided outside the sealing material 65. Further, the sealing material 65 may be provided with other organic materials such as acrylic or thermosetting. Moreover, you may use materials other than a silver paste also for the up-and-down conduction | electrical_connection part 33. FIG. Further, the vertical conduction part 33 is not limited to the four corners. These can also be applied to other embodiments.

(Third Modification)
FIG. 12 is a cross-sectional view illustrating a configuration of an organic EL display device according to a third modification of the electric device including the element substrate 300. As shown in FIG. 12, the organic EL display device (electric device) 103 employs an organic EL layer (functional element) 32C instead of the electrophoretic layer of the electrophoretic display device and the liquid crystal layer of the liquid crystal display device described above. doing. In the present embodiment, the same reference numerals are given to the same configurations and members as those in the above embodiment, and the description thereof is omitted or simplified. In FIG. 12, for simplicity, the drive circuit layer 24 is illustrated in a simplified manner.

  As shown in FIG. 12, the organic EL display device 103 includes an organic EL layer 32 </ b> C, a cathode 121, and a protective film 122 that covers the top and side surfaces of the cathode 121 on the drive circuit layer 24 of the element substrate 300. The organic EL layer 32C includes a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. The protective film 122 is made of a non-single crystal silicon nitride film and has a thickness of 1 μm. The cathode 121 is electrically connected to the back electrode 19 through the vertical conduction part 33.

  Thus, even when the semiconductor substrate of the present invention is applied to an organic EL display device, the space surrounded by the cathode 121 and the back electrode 19 covered with the protective film 122 is a shield that prevents the influence of external static electricity. Since the space is configured, the control transistor TRs and the control transistor TRs in the shield space can be protected from electrostatic breakdown.

When the present invention is applied to an organic EL display device, a two-transistor one-capacitor configuration as shown in FIG. In this case, image data is written from the data line 68 to the storage capacitor Cs via the switching transistor TR1. The voltage held in the holding capacitor Cs is applied to the gate electrode 41e of the control transistor TR2, and the control transistor TR2 becomes conductive according to the gate voltage. A signal line 70 is connected to the source electrode 41c of the control transistor TR2, and a signal potential is applied. In addition, an electro-optic material made of an organic EL material is connected to the drain electrode 41 d via the pixel electrode 35. The signal potential is modulated according to the conduction state of the control transistor TR2 and applied to the electro-optic material. That is, the signal potential is modulated in accordance with the image data written from the data line 68 and applied to the electro-optic material. Display is performed in this way.
Here, the holding capacitor Cs may be specially formed, or the parasitic capacitance of the two transistors TR1 and TR2 may be used. Such a two-transistor one-capacitor configuration is usually used as a drive circuit for an organic EL display device, but this configuration may be used as a drive circuit layer 24 for the electrophoretic display device 100 according to the first embodiment. .

(Second Embodiment)
FIG. 14 is a cross-sectional view showing the overall configuration of the element substrate 301 according to the second embodiment. Unlike the first embodiment, the element substrate 301 according to the present embodiment employs a structure in which the gate wiring 125 (scanning line 66) connected to the gate electrode 41e is embedded in the first substrate 30. . In addition, the same code | symbol is attached | subjected about the member and structure same as the said embodiment, and the description is abbreviate | omitted or simplified.

  Specifically, as shown in FIG. 14, the gate wiring 125 is formed in the same layer as the gate driver IC 51 on the base material 30B, and is connected to the gate electrode 41e through the contact hole H6. The gate wiring 125 is composed of an Al layer having a thickness of 200 nm.

  In the case of manufacturing the gate wiring 125, it is formed by forming an Al layer having a thickness of 200 nm on the base material 30B by sputtering or coating in the step shown in FIG. 4C and patterning it by a photoetching method. Further, the gate electrode 41e electrically connected to the gate wiring 125 forms a contact hole H6 that allows the gate wiring 125 to face inside together with the contact holes H2 and H3 in the step shown in FIG. 5B. Then, in the step shown in FIG. 5C, Al is deposited on the base material 30C by the sputtering method, and patterned by the photoetching method to be buried in the contact hole H6 and electrically connected to the gate wiring 125. The gate electrode 41e to be formed can be formed simultaneously with the storage capacitor line 69 and the like.

  Even in the element substrate 301 according to the present embodiment, although not shown, the wiring such as the data line 68 and the storage capacitor line 69 constituting the source electrode 41c is embedded in the first substrate 30. good. Thereby, the number of components created on the element substrate 300 is reduced, a three-dimensional layout on the substrate is possible, and high definition can be realized.

(Third embodiment)
FIG. 15 is a cross-sectional view showing the overall configuration of the element substrate 302 according to the third embodiment. Unlike the first and second embodiments, the element substrate 302 according to the present embodiment uses the back electrode 19 as the storage capacitor line 69. In addition, the same code | symbol is attached | subjected about the member and structure same as the said embodiment, and the description is abbreviate | omitted or simplified.

Specifically, as shown in FIG. 15, the storage capacitor line 69 is directly connected to the back electrode 19 via a contact hole H7 that penetrates the base materials 30A and 30B.
When the storage capacitor line 69 is manufactured, the contact hole H2 is formed so as to penetrate the base materials 30A and 30B and face the back electrode 19 inside in the process shown in FIG. Then, in the step shown in FIG. 5C, Al is formed on the base material 30C by the sputtering method, and is patterned by the photoetching method to be buried in the contact hole H2 and electrically connected to the back electrode 19. The storage capacitor line 69 to be formed can be formed simultaneously with the gate electrode 41e and the like.

(Fourth embodiment)
FIG. 16 is a diagram illustrating a configuration according to the electrophoretic display device 104 as an electric device including the element substrate 303 according to the fourth embodiment. FIG. 17 is a diagram for explaining the operation of the electrophoretic display device 104 according to this embodiment.

  Unlike the electrophoretic display device 100 of the first embodiment, the electrophoretic display device 104 of the present embodiment has a plurality of pixel electrodes 35 in one pixel, and the plurality of pixel electrodes 35 and counter electrodes (drive electrodes). ) Electrophoretic particles are moved by applying a voltage between them. In addition, the same code | symbol is attached | subjected about the same member and structure as the said 1st Embodiment, and the description is abbreviate | omitted or simplified.

  In the electrophoretic display device 104 according to the present embodiment, the electrophoretic layer 232 formed between the plurality of pixel electrodes 35 and the counter electrode 37 has a positively charged white positive electrode in the black dispersion medium 221 (B). Many charged particles 227 (W) are mixed. Here, not the pixel electrode 35 but the counter electrode 37 side is the viewing side.

  In the element substrate 300, the pixel electrode 35 is formed along the inner wall surface of the contact hole H <b> 4 formed in the first protection film 42 and the second protection film 43, and the recess 240 is recessed with respect to the upper surface of the element substrate 300. have.

  Charged particles such as positively charged particles 227 (W) behave as electrophoretic particles in the electrophoretic layer 232. When a negative voltage is applied to the pixel electrodes 35, the positively charged particles 227 (W) are collected on the pixel electrodes 35 as shown in FIG. At this time, since the black dispersion medium 221 (B) is visually recognized, black display is performed.

  On the other hand, when the particles 227 (W) are not moved to the counter electrode 37, that is, when a positive voltage is applied to each pixel electrode 35 to collect all the particles 227 (W) on the counter electrode 37, FIG. ), Since white positively charged particles 227 (W) are visually recognized, white display is performed. In the case of halftone display, a positive voltage smaller than that in white display is applied to each pixel electrode 35.

By controlling the number of particles 227 (W) reaching the counter electrode 37 and the distribution state (distribution region) in this way, black display or white display, or display of intermediate gradation from black to white can be controlled.
Further, by providing a plurality of pixel electrodes 35 in an island shape within one pixel, display can be controlled with better controllability.

  According to the electrophoretic display device 104 according to the present embodiment, as shown in FIG. 16, since the pixel electrode 35 is formed in a state of being recessed with respect to the upper surface of the element substrate 300, each pixel electrode 35 has a minus value. When all the particles 227 (W) are collected on the pixel electrode 35 by applying the above voltage, the positively charged particles 227 (W) are attracted to the pixel electrode 35 and enter the recess 240. For this reason, even when the application of voltage to the pixel electrode 35 is stopped, a large number of positively charged particles 227 (W) are held in the recesses 240, thereby preventing the particles from spreading when shifting to the non-voltage application state. can do.

  Further, the element substrate 300 may be configured such that the drain electrode 41d is directly exposed in the recess 240 formed by the contact hole H4 without forming the island-shaped pixel electrode 35 as shown in FIG. . According to this configuration, by applying a negative voltage to each drain electrode 41d exposed in the recess 240 and drawing all the particles 227 (W) into the recess 240, the particles at the time of transition to the non-voltage application state The spread between each other can be prevented.

(Application to other electrical devices)
FIG. 19 is a diagram illustrating a schematic configuration of a detection element used in the piezoelectric sensor, to which the configuration of the electric device according to the first embodiment is applied, in which (a) is a plan view and (b) is (a). It is sectional drawing for one detection electrode along the AA line.
The piezoelectric sensor includes one or a plurality of detection elements 702 in which a piezoelectric layer (functional element) 74 is disposed between the element substrate 700 and the counter substrate 710. As the element substrate 700 and the counter substrate 710 of the detection element 702, configurations similar to the element substrate and the counter substrate in the electrophoretic display device of the first embodiment described above can be respectively employed.

  Specifically, the counter substrate 710 of this embodiment includes a protective substrate 71 made of PET having a thickness of 0.2 mm, and a conductive film 77 made of carbon nanotubes provided on the surface of the protective substrate 71 on the piezoelectric layer 74 side. It can be bent like the element substrate 700. The piezoelectric layer 74 is made of a copolymer of trifluoroethylene and vinylidene fluoride having a thickness of 1 μm.

  When a pressure is applied to the piezoelectric sensor from the outside, each detection element 702 includes a plurality of detection electrodes 78 provided on the element substrate 700 instead of the above-described plurality of pixel electrodes, and a counter substrate 710. By detecting a change in voltage induced between the conductive film 77 and the piezoelectric sensor, it is determined whether or not an object has contacted the piezoelectric sensor.

As the element substrate 700, the same configuration as that of any element substrate in the above-described embodiments can be adopted.
The piezoelectric layer 74, the conductive film 77, and the protective substrate 71 may be made of other organic or inorganic materials that are not limited to the above. The sealing material 75 that is disposed at the periphery of the element substrate 700 and the counter substrate 710 and surrounds the periphery of the piezoelectric layer 74 is configured using the same material as that of each of the above-described embodiments. Alternatively, the current supplied to the detection electrode (pixel electrode) 78 and the conductive film 77 may be detected.

  This piezoelectric sensor is a flexible film like paper and detects, for example, a pressure distribution when a person sits on a chair. Further, when a plurality of base materials constituting the element substrate 700 are made of a material having flexibility or stretchability, it is possible to follow complicated deformation and detect an accurate value.

  The detection value is output to the outside by a communication function element (IC that communicates with the antenna) embedded in the element substrate 700.

  If a pyroelectric material is used instead of the piezoelectric material, a two-dimensional temperature sensor can be configured. If a photoelectric conversion material is used, a two-dimensional optical sensor, a terahertz wave sensor, or an X-ray sensor can be configured. Furthermore, applications other than these electric devices are possible.

  The formation of the electric device is not limited to the configuration according to the embodiment or the modification, and can be appropriately changed without departing from the gist of the invention. For example, as shown in FIG. 20, as the electrophoretic display device 100 according to the first embodiment, a battery 56 for supplying power to an electronic component (for example, a gate driver IC 51) embedded in the first substrate 30. May be embedded.

  In this case, the battery 56 is connected to an external connection terminal 57 that is in the same layer as the solid back electrode 19 and can be used to charge the battery. The external connection terminal 57 is disposed in the through-hole 19A of the back electrode 19 formed so as to partially overlap the battery 56 in plan view, and is the outermost base material constituting the first substrate 30. It is in a state exposed to the outside from the through hole 29 of 30A. In addition, as the battery 56, a battery that is not easily destroyed by static electricity is adopted.

  The external connection terminal 57 constitutes a terminal for charging the battery 56 embedded in the first substrate 30, and can be formed in the same process as the back electrode 19. Therefore, a separate process for manufacturing the external connection terminal 57 is not required.

The first substrate 30 constituting the element substrate 300 may be embedded with an antenna that transmits a signal received from the outside to an electronic component (controller) embedded therein. The antenna is arranged around the image display area 5 and is configured by a coil that circulates along each side of the element substrate 300. The antenna is provided on the same base material 30A as the back electrode 19, for example. The antenna may be formed in a different layer from the back electrode 19.
In addition, an external output terminal for detection values or an external connection terminal 57 for other purposes may be provided separately.

(Electronics)
Next, a case where the electrophoretic display device of each of the above embodiments is applied to an electronic device will be described.
FIG. 21 is a perspective view illustrating a specific example of an electronic apparatus to which an electrophoretic display device which is an example of the electric device of the present invention is applied.
FIG. 21A is a perspective view illustrating an electronic book that is an example of the electronic apparatus. The electronic book (electronic device) 1000 includes a book-shaped frame 1001, a cover 1002 that can be rotated (openable and closable) with respect to the frame 1001, an operation unit 1003, and the electrophoretic display of the present invention. And a display unit 1004 configured by the apparatus.

  FIG. 21B is a perspective view illustrating a wrist watch that is an example of an electronic apparatus. The wristwatch (electronic device) 1100 includes a display unit 1101 constituted by the electrophoretic display device of the present invention.

  FIG. 21C is a perspective view illustrating electronic paper which is an example of an electronic apparatus. This electronic paper (electronic device) 1200 includes a main body 1201 formed of a rewritable sheet having the same texture and flexibility as paper, and a display unit 1202 configured by the electrophoretic display device of the present invention.

For example, electronic books, electronic papers, and the like are supposed to be used for repeatedly writing characters on a white background, and therefore it is necessary to eliminate afterimages at the time of erasure and afterimages over time.
Note that the range of electronic devices to which the electrophoretic display device of the present invention can be applied is not limited to this, and includes a wide range of devices that utilize changes in visual color tone accompanying the movement of charged particles.

  According to the above-described electronic book 1000, wristwatch 1100, and electronic paper 1200, since the electrophoretic display device according to the present invention is adopted, it is possible to perform a display close to a full color that is bright and has good visibility, and has high reliability and high quality. It becomes an electronic device.

In addition, said electronic device illustrates the electronic device which concerns on this invention, Comprising: The technical scope of this invention is not limited. For example, the electrophoretic display device according to the present invention is suitable for a display unit of an electronic device such as a mobile phone or a portable audio device, or an electronic paper such as a business sheet such as a manual, a textbook, a problem collection, or an information sheet. Can be used.
In addition, the equivalent circuit of one pixel is not limited to that shown in 1T1C or FIG. 13, but other equivalent circuits may be used for each functional material.
The voltage applied to the back electrode 19 and the counter electrode 37 is applied using a controller IC or other voltage application means.

DESCRIPTION OF SYMBOLS 19 ... Back electrode (electrode layer), 30 ... 1st board | substrate (board | substrate main body), 31 ... 2nd board | substrate, 30A-30C ... Base material, 32A ... Electrophoresis layer (functional element), 32B ... Liquid crystal layer (functional element) 32C ... Organic EL layer (functional element), 33 ... Vertical conduction part (conductive part), 37 ... Counter electrode (drive electrode), 51 ... Gate driver IC (electronic component, semiconductor element), 200 ... Support, 300 ... Element substrate, 310 ... counter substrate, 1000 ... electronic book (electronic device), TRs ... control transistor (semiconductor element)

Claims (13)

Forming a first substrate by laminating a plurality of base materials made of a resin material on a support;
Peeling the support from the first substrate;
Pasting the second substrate so as to sandwich the functional element with the first substrate,
In the step of forming the first substrate, the electrode layer is disposed so as to be sandwiched between any of the plurality of base materials, and is any layer between the plurality of base materials that is an upper layer than the electrode layer. A method for manufacturing an electrical device, comprising: providing a semiconductor element for driving the functional element so as to be sandwiched between or disposed on a surface of the first substrate.   The method for manufacturing an electrical device according to claim 1, wherein the support is peeled off after the second substrate is attached to the first substrate.   2. The first substrate forming step, wherein a conductive portion electrically connected to the electrode layer is formed so as to be drawn out to a surface side of the first substrate opposite to the support. Or the manufacturing method of the electric apparatus of 2.   The method for manufacturing an electrical device according to claim 3, wherein the conductive portion is formed at a corner of the functional element placement region.   5. The method of manufacturing an electrical device according to claim 3, wherein a plurality of the conductive portions are drawn out to a surface side of the first substrate opposite to the support body.   6. The step of attaching the second substrate includes electrically connecting a drive electrode provided on the inner surface side of the second substrate and driving the functional element and the conductive portion. The manufacturing method of the electric apparatus as described in any one of these.   The said 1st board | substrate formation process WHEREIN: The said semiconductor element clamped between either of the said several base materials and the said electrode layer are electrically connected, The any one of Claims 1-6 characterized by the above-mentioned. The manufacturing method of the electric apparatus as described in a term.   The method of manufacturing an electric device according to claim 1, wherein an electronic component is used as the semiconductor element sandwiched between any of the plurality of base materials.   The method for manufacturing an electric apparatus according to claim 1, wherein the functional element is an electro-optical element. Forming a substrate body by laminating a plurality of base materials made of a resin material on a support; and
Peeling the support from the substrate body, and
In the step of forming the substrate body, the electrode layer is disposed so as to be sandwiched between any of the plurality of base materials, and is located above any of the electrode layers and between any of the plurality of base materials. A semiconductor substrate manufacturing method, wherein a semiconductor element is provided so as to be sandwiched or disposed on a surface of the substrate body. A support;
A substrate body provided on the support and formed by laminating a plurality of flexible base materials;
A semiconductor element provided between the surface of the substrate body or the plurality of base materials; and
An electrode layer embedded between the plurality of base materials and below the semiconductor element and embedded in the substrate body;
A substrate for forming an electric device, comprising:   The electric device forming substrate according to claim 11, wherein a conductive portion electrically connected to the electrode layer is drawn out on a surface of the substrate body opposite to the support.   An electronic apparatus comprising the electric device manufactured by the method for manufacturing an electric device according to claim 1.

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