JP2013031111A - Method of manufacturing package, piezoelectric vibrator, oscillator, electronic device, and radio-controlled clock - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a package, which can easily and accurately position a lid substrate wafer (first wafer) and a base substrate wafer (second wafer); a piezoelectric vibrator manufactured by the manufacturing method; an oscillator provided with the piezoelectric vibrator; an electronic device; and a radio-controlled clock.SOLUTION: The method for manufacturing a package 9 comprises: a first wafer cutting step of forming a positioning side face 51 of the lid substrate wafer (first wafer); a second wafer cutting step of forming a positioning side face 41 of the base substrate wafer (second wafer); and a positioning step S61 of determining relative positions of each of the wafers 40 and 50 and overlapping the wafers. The positioning step S61 includes determining the relative positions of each of the wafers 40 and 50 by bringing a positioning face 81 of a positioning jig 80 into contact with the respective positioning side faces 41 and 51.

Description

  The present invention relates to a package manufacturing method, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.

  2. Description of the Related Art In recent years, cellular phones and personal digital assistants use piezoelectric vibrators that use quartz as a time source, a timing source such as a control signal, and a reference signal source. Various types of piezoelectric vibrators of this type are known. As one of them, a two-layer structure type surface mount type piezoelectric vibrator is known.

  This type of piezoelectric vibrator has a two-layer structure that is packaged by directly bonding the first wafer and the second wafer, and the piezoelectric vibrating piece is housed in the cavity formed in the first wafer. Has been. The first wafer and the second wafer are anodically bonded via a bonding material such as aluminum or silicon (see, for example, Patent Document 1).

Here, the first wafer and the second wafer are usually formed of a glass material, and the glass material contains an organic substance, moisture or the like.
Therefore, if each wafer is heated during anodic bonding, outgas such as organic matter and moisture is generated and released into the package, which may reduce the degree of vacuum in the package. Thereby, there is a possibility that desired electrical characteristics of the piezoelectric vibrator cannot be obtained.

  In order to solve this problem, it is known to place a spacer between the first wafer and the second wafer and superimpose the first wafer and the second wafer before performing anodic bonding. ing. By performing the preheating, outgas is released to the outside from the gap between the first wafer and the second wafer formed by the spacer. Thereby, generation | occurrence | production of the outgas in the case of anodic bonding is prevented, and the fall of the vacuum degree in a package is prevented.

After the preheating, the piezoelectric vibrating piece mounted on the second wafer is disposed in the cavity of the first wafer, and the first wafer and the second wafer are anodically bonded.
At this time, if the relative positions of the first wafer and the second wafer are deviated from a predetermined position and bonded, for example, the piezoelectric vibrating piece comes into contact with the cavity wall surface of the first wafer, and desired vibration characteristics are obtained. There is a risk of not.

  Therefore, for example, by forming alignment marks having the same shape on the first wafer and the second wafer and aligning the alignment marks with each other, anodic bonding is performed while positioning the first wafer and the second wafer. Yes.

JP 2001-72433 A

  However, when the alignment mark is used, it is necessary to position the first wafer and the second wafer while visually confirming, so that there is a problem that the process is complicated and the positioning takes time. Moreover, positioning by visual confirmation is limited in accuracy.

  Further, when the first wafer and the second wafer are transferred after positioning, or when the spacer is pulled out between the first wafer and the second wafer for anodic bonding, the positions of the first wafer and the second wafer are determined. Misalignment may occur. Further, if the first wafer and the second wafer are misaligned after positioning, it takes time because it is necessary to perform positioning again.

  Therefore, the present invention provides a package manufacturing method capable of easily and accurately positioning the first wafer and the second wafer, a piezoelectric vibrator manufactured by the manufacturing method, an oscillator including the piezoelectric vibrator, an electronic apparatus, and a radio wave. The issue is to provide watches.

  In order to solve the above problems, a package manufacturing method according to the present invention is a package manufacturing method capable of enclosing an electronic component between a first wafer and a second wafer bonded to each other. A first wafer cutting step of cutting at least two portions to form at least two first wafer positioning side surfaces that intersect each other, and at least two peripheral portions of the second wafer are cut away and at least two second wafers intersecting each other A second wafer cutting step for forming two wafer positioning side surfaces and setting an intersecting angle between the at least two second wafer positioning side surfaces to correspond to the intersecting angle of the first wafer positioning side surface; A positioning step of determining and overlaying relative positions of the wafers in a direction along the surface, and after the positioning step, A bonding step of bonding a wafer and the second wafer, and in the positioning step, a positioning surface of a positioning jig is brought into contact with each positioning side surface to determine a relative position of each wafer. It is said.

According to the present invention, the first wafer positioning side surface and the corresponding second wafer positioning side surface can be obtained by simply bringing the first wafer positioning side surface and the second wafer positioning side surface into contact with the positioning surface of the positioning jig. Can be placed flush. Therefore, it is possible to easily and accurately position the first wafer and the second wafer.
In addition, even if the first wafer and the second wafer are misaligned between the positioning process and the bonding process, the first wafer positioning side surface and the second wafer positioning side surface are positioned on the positioning surface of the positioning jig. By simply bringing them into contact with each other, the positioning of the first wafer and the second wafer can be easily performed with high accuracy.

  Further, in the package manufacturing method of the present invention, in the positioning step, a relative position of each of the wafers is determined and superimposed while arranging a spacer between the first wafer and the second wafer. Thereafter, a clamping step of clamping the wafers together with the spacers from both sides in the thickness direction of the wafers with a clamping jig, and heating the first wafer and the second wafer at a predetermined temperature before the bonding step. And a preheating step for releasing outgas.

According to the present invention, after the positioning step, the first wafer, the second wafer, and the spacer are held by the clamp jig, so that the first wafer and the second wafer can be held with high accuracy. Therefore, it is possible to prevent the positional deviation between the first wafer and the second wafer while the spacer is sandwiched between the positioning process and the transfer process to the bonding process.
In addition, after the preheating process, when the spacer is pulled out and the bonding process is performed, even if the first wafer and the second wafer are misaligned, the first wafer positioning side surface and the first wafer are positioned on the positioning surface of the positioning jig. By simply abutting the two wafer positioning side surfaces, the positioning can be easily performed again with high accuracy.

  In the package manufacturing method of the present invention, a bonding material is formed on the inner surface of the first wafer, and an anode connection portion is formed on the bonding material at a peripheral portion other than the first wafer positioning side surface of the first wafer. In the second wafer cutting step, in addition to forming the second wafer positioning side surface, a position corresponding to the anode connecting portion is cut out to form a relief portion exposing the anode connecting portion, and the joining step Then, the first wafer and the second wafer are anodically bonded using the bonding material of the first wafer as an anode and the second wafer as a cathode.

  According to the present invention, since the relief portion is formed in the second wafer cutting step, it is possible to prevent interference between the anode electrode connected to the anode connection portion of the first wafer and the second wafer. Therefore, anodic bonding can be reliably performed while positioning the first wafer and the second wafer easily and accurately.

  In addition, the piezoelectric vibrator of the present invention is characterized in that a piezoelectric vibrating piece is enclosed as the electronic component in the package described above.

  According to the present invention, since the piezoelectric vibrating reed is enclosed in a package capable of easily and accurately positioning the first wafer and the second wafer, a piezoelectric vibrator having good performance at low cost is provided. Can do.

The oscillator according to the present invention is characterized in that the piezoelectric vibrator described above is electrically connected to an integrated circuit as an oscillator.
The electronic apparatus according to the present invention is characterized in that the above-described piezoelectric vibrator is electrically connected to a time measuring unit.
The radio timepiece of the present invention is characterized in that the above-described piezoelectric vibrator is electrically connected to the filter unit.

  According to the oscillator, the electronic device, and the radio timepiece of the present invention, it is possible to provide an oscillator, an electronic device, and a radio timepiece that have low cost and good performance.

According to the present invention, the first wafer positioning side surface and the corresponding second wafer positioning side surface can be obtained by simply bringing the first wafer positioning side surface and the second wafer positioning side surface into contact with the positioning surface of the positioning jig. Can be placed flush. Therefore, it is possible to easily and accurately position the first wafer and the second wafer.
In addition, even if the first wafer and the second wafer are misaligned between the positioning process and the bonding process, the first wafer positioning side surface and the second wafer positioning side surface are positioned on the positioning surface of the positioning jig. By simply bringing them into contact with each other, the positioning of the first wafer and the second wafer can be easily performed with high accuracy.

It is an external appearance perspective view which shows a piezoelectric vibrator. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a plan view with a lid substrate removed. It is sectional drawing along the AA line of FIG. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. It is a flowchart of the manufacturing method of a piezoelectric vibrator. It is a disassembled perspective view of a wafer body. It is explanatory drawing of the wafer cutting process for lid substrates. It is explanatory drawing of the wafer cut process for base substrates. It is explanatory drawing of a positioning process and a clamping process. It is explanatory drawing of a joining process. It is a block diagram which shows one Embodiment of an oscillator. It is a lineblock diagram showing one embodiment of electronic equipment. It is a block diagram which shows one Embodiment of a radio timepiece.

(Piezoelectric vibrator)
Hereinafter, a piezoelectric vibrator according to an embodiment of the present invention will be described with reference to the drawings.
1 is an external perspective view of the piezoelectric vibrator 1, FIG. 2 is an internal configuration diagram of the piezoelectric vibrator 1, and FIG. 3 is a cross-sectional view taken along the line AA of FIG. FIG. 4 is an exploded perspective view of the piezoelectric vibrator 1 shown in FIG.
In the following description, the outer surface of the base substrate 2 is referred to as an outer surface L, and the inner surface of the base substrate 2 is referred to as an inner surface U. Further, in FIG. 4, in order to make the drawing easy to see, illustration of an excitation electrode 15, extraction electrodes 19 and 20, mount electrodes 16 and 17 and a weight metal film 21 which will be described later is omitted.

  As shown in FIG. 1, the piezoelectric vibrator 1 according to this embodiment includes a package 9 in which a base substrate 2 and a lid substrate 3 are anodically bonded via a bonding film 35 (corresponding to “bonding material” in the claims of the present application). This is a surface-mounted piezoelectric vibrator 1. As shown in FIG. 3, the piezoelectric vibrating reed 4 is accommodated in the cavity C inside the package 9.

(Piezoelectric vibrating piece)
As shown in FIG. 2, the piezoelectric vibrating piece 4 is a tuning fork type vibrating piece formed of a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied. It is. The piezoelectric vibrating reed 4 includes a pair of vibrating arm portions 10 and 11 arranged in parallel, a base portion 12 that integrally fixes the base end sides of the pair of vibrating arm portions 10 and 11, and a pair of vibrating arm portions 10. , 11 and groove portions 18 formed on both main surfaces. The groove portion 18 is formed from the base end side of the vibrating arm portions 10 and 11 to the vicinity of the middle along the longitudinal direction of the vibrating arm portions 10 and 11.

  The excitation electrodes 13 and 14 and the extraction electrodes 19 and 20 are formed of a single layer film of chromium which is the same material as the underlayer of the mount electrodes 16 and 17 described later. Thereby, the excitation electrodes 13 and 14 and the extraction electrodes 19 and 20 can be formed simultaneously with the formation of the underlying layers of the mount electrodes 16 and 17.

  The excitation electrodes 13 and 14 are electrodes that vibrate the pair of vibrating arm portions 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. The first excitation electrode 13 and the second excitation electrode 14 are formed by patterning on the outer surfaces of the pair of vibrating arm portions 10 and 11 while being electrically separated from each other.

  The mount electrodes 16 and 17 are laminated films of chromium and gold, and are formed by forming a chromium film having good adhesion with crystal as a base layer and then forming a gold thin film as a finishing layer on the surface. The

  A weight metal film 21 for adjusting (frequency adjustment) so as to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 10 and 11. The weight metal film 21 is divided into a coarse adjustment film 21a used when the frequency is roughly adjusted and a fine adjustment film 21b used when the frequency is finely adjusted. By adjusting the frequency using the coarse adjustment film 21a and the fine adjustment film 21b, the frequency of the pair of vibrating arm portions 10 and 11 can be kept within the range of the nominal frequency of the device.

(package)
As shown in FIG. 1, the base substrate 2 and the lid substrate 3 are anodic bondable substrates made of a glass material, for example, soda lime glass, and are formed in a substantially plate shape. As shown in FIG. 3, a cavity recess 3 a that accommodates the piezoelectric vibrating reed 4 is formed on the side of the lid substrate 3 that is bonded to the base substrate 2.

  A bonding film 35 for anodic bonding is formed on the entire bonding surface side of the lid substrate 3 with the base substrate 2. That is, the bonding film 35 is formed in the frame area around the cavity recess 3a in addition to the entire inner surface of the cavity recess 3a. Although the bonding film 35 of this embodiment is formed of a silicon film, the bonding film 35 can also be formed of aluminum, chromium, or the like. The base substrate 2 and the lid substrate 3 are anodically bonded via the bonding film 35, and the cavity C is vacuum-sealed.

  As shown in FIG. 3, the piezoelectric vibrator 1 includes through electrodes 32 and 33 that penetrate the base substrate 2 in the thickness direction and conduct the inside of the cavity recess 3 a and the outside of the piezoelectric vibrator 1. . The through electrodes 32 and 33 are disposed in the through holes 30 and 31 that penetrate the base substrate 2, and electrically connect the piezoelectric vibrating reed 4 and the outside. The through holes 30 and 31 are formed so that the inner shape gradually increases from the inner surface U side to the outer surface L side, and the cross-sectional shape including the central axis O is formed in a tapered shape.

  As shown in FIG. 3, the through electrodes 32 and 33 are arranged along the central axis O of the through holes 30 and 31. The through electrodes 32 and 33 are conductive rod-like members formed of a metal material such as silver, nickel alloy, or aluminum, and are formed by forging or pressing. The through electrodes 32 and 33 are desirably formed of a metal having a linear expansion coefficient close to that of the glass material of the base substrate 2, for example, an alloy (42 alloy) containing 58 weight percent of iron and 42 weight percent of nickel.

  The glass body 6 filled between the through electrodes 32 and 33 and the through holes 30 and 31 is obtained by baking paste-like glass frit. The glass body 6 completely closes the gap between the through holes 30 and 31 and the through electrodes 32 and 33 and maintains the airtightness in the cavity C.

  A pair of lead-out electrodes 36 and 37 are patterned on the inner surface U side of the base substrate 2. Further, bumps B made of gold or the like are formed on the pair of lead-out electrodes 36 and 37, respectively, and a pair of mount electrodes of the piezoelectric vibrating reed 4 are mounted using the bumps B. As a result, one mount electrode 17 of the piezoelectric vibrating reed 4 is electrically connected to one through electrode 32 via one routing electrode 36, and the other mount electrode 16 is connected to the other through the other routing electrode 37. The electrode 33 is electrically connected.

  A pair of external electrodes 38 and 39 are formed on the outer surface L of the base substrate 2. The pair of external electrodes 38 and 39 are formed at both ends in the longitudinal direction of the base substrate 2, and are electrically connected to the pair of through electrodes 32 and 33, respectively.

  When the piezoelectric vibrator 1 configured in this way is operated, a predetermined drive voltage is applied to the external electrodes 38 and 39 formed on the base substrate 2. As a result, a voltage can be applied to the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating reed 4, so that the pair of vibrating arm portions 10 and 11 are moved toward and away from each other at a predetermined frequency. Can be vibrated. The vibration of the pair of vibrating arm portions 10 and 11 can be used as a time source, a timing source for control signals, a reference signal source, and the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the above-described piezoelectric vibrator will be described with reference to a flowchart.
FIG. 5 is a flowchart of the manufacturing method of the piezoelectric vibrator 1 of the present embodiment.
FIG. 6 is an exploded perspective view of the wafer body 60. In addition, the dotted line shown in FIG. 6 has shown the cutting line M cut | disconnected by the cutting process performed later.
The manufacturing method of the piezoelectric vibrator 1 according to the present embodiment mainly includes a piezoelectric vibrating piece manufacturing step S10, a lid substrate wafer manufacturing step S20, a base substrate wafer manufacturing step S30, and an assembly step (S50 and subsequent steps). Have. Among these steps, the piezoelectric vibrating piece producing step S10, the lid substrate wafer producing step S20 and the base substrate wafer producing step S30 can be carried out in parallel.

(Piezoelectric vibrating piece manufacturing process)
In the piezoelectric vibrating piece producing step S10, the piezoelectric vibrating piece 4 is produced. Specifically, first, a crystal Lambert ore is sliced at a predetermined angle and subjected to mirror polishing such as polishing to obtain a wafer having a predetermined thickness. Subsequently, patterning is performed on the outer shape of the piezoelectric vibrating piece 4 by a photolithography technique, and a metal film is formed and patterned, so that the excitation electrodes 13 and 14, the extraction electrodes 19 and 20, the mount electrodes 16 and 17, and the weight metal A film 21 is formed. Thereafter, the resonance frequency of the piezoelectric vibrating piece 4 is roughly adjusted. Thus, the piezoelectric vibrating piece producing step S10 is completed.

(Wad manufacturing process for lid substrate)
In the lid substrate wafer manufacturing step S20, a lid substrate wafer 50 (corresponding to “first wafer” in the claims, see FIG. 6) to be the lid substrate 3 later is manufactured.
First, the substantially disc-shaped lid substrate wafer 50 made of soda-lime glass is polished and washed to a predetermined thickness, and then the outermost work-affected layer is removed by etching or the like (S21).

  Next, a cavity forming step S <b> 22 for forming a plurality of cavity recesses 3 a on the bonding surface of the lid substrate wafer 50 is performed. The cavity recess 3a is formed by hot press molding or etching. Next, in the bonding surface polishing step S23, the bonding surface with the base substrate wafer 40 described later is polished.

  Next, a bonding film forming step S24 for forming a bonding film 35 (see FIG. 3) on the bonding surface is performed. The bonding film 35 may be formed on the entire inner surface of the cavity C in addition to the bonding surface with the base substrate wafer 40. Thereby, the patterning of the bonding film 35 becomes unnecessary, and the manufacturing cost can be reduced. The bonding film 35 can be formed by a film forming method such as sputtering or CVD. In addition, since the bonding surface polishing step S23 is performed before the bonding film forming step S24, the flatness of the surface of the bonding film 35 is ensured, and stable bonding with the base substrate wafer 40 can be realized.

(Wafer cutting process for lid substrate)
FIG. 7 is an explanatory diagram of the lid substrate wafer cutting step S25.
In the lid substrate wafer manufacturing step S20, a lid substrate wafer cutting step S25 (corresponding to “first wafer cutting step” in the claims) is finally performed.
As shown in FIG. 7, in the lid substrate wafer cutting step S25, three portions of the peripheral portion of the substantially disk-shaped lid substrate wafer 50 are cut out to form lid substrate wafer positioning side surfaces 51a, 51b, 51c (invoice). (Corresponding to “first wafer positioning side surface”).

  In the lid substrate wafer cutting step S25, grooves are formed along the formation positions of the respective lid substrate wafer positioning side surfaces 51a, 51b, 51c by, for example, laser processing, and then a blade is pressed into the grooves to press the lid substrate wafer 50. The peripheral part of this is excised. However, the cutting method of the peripheral portion of the lid substrate wafer 50 is not limited to this, and the peripheral portion of the lid substrate wafer 50 may be cut using a cutter such as a dicing saw.

Each lid substrate wafer positioning side surface 51a, 51b, 51c is formed on a flat surface. The lid substrate wafer positioning side surfaces 51a and 51c are formed substantially in parallel with the center of the lid substrate wafer 50 therebetween, and the intersection angle with the lid substrate wafer positioning side surface 51b is set to about 90 °. Yes.
Further, on the opposite side of the lid substrate wafer positioning side surface 51b across the center of the lid substrate wafer 50, the peripheral portion of the lid substrate wafer 50 remains without being cut off. The remaining peripheral edge portion serves as an anode connection portion 53 to which the anode electrode 85 (see FIG. 9) is connected in the bonding step S70 described later.
When the lid substrate wafer positioning side surfaces 51a, 51b, and 51c are formed on the lid substrate wafer 50, the lid substrate wafer manufacturing step S20 is completed.

(Base substrate wafer manufacturing process)
In the base substrate wafer manufacturing step S30, a base substrate wafer 40 (corresponding to “second wafer” in the claims, see FIG. 6) to be the base substrate 2 later is manufactured. First, the substantially disc-shaped base substrate wafer 40 made of soda-lime glass is polished and washed to a predetermined thickness, and then the outermost work-affected layer is removed by etching or the like (S31).

  Next, a through electrode forming step S32 for forming a pair of through electrodes 32 and 33 on the base substrate wafer 40 is performed. In addition, although the formation process of the penetration electrode 32 is demonstrated below, the formation process of the penetration electrode 33 is also the same.

First, the through hole 30 is formed by pressing or the like from the outer surface L to the inner surface U of the base substrate wafer 40. Next, the through electrode 32 is inserted into the through hole 30 and filled with glass frit.
Subsequently, the glass frit is fired to form the glass body 6, and the glass body 6, the through hole 30 and the through electrode 32 are integrated (see FIG. 3). Then, the inner surface U and the outer surface L of the base substrate wafer 40 are polished to expose both end surfaces of the through electrode 32 from the base substrate wafer 40, thereby forming the through electrode 32 that penetrates the base substrate wafer 40. .

  Next, a routing electrode forming step S33 is performed in which a plurality of routing electrodes 36 and 37 electrically connected to the through electrodes 32 and 33 are formed on the inner surface U of the base substrate wafer 40, respectively. Further, bumps B (see FIG. 4) made of gold or the like are formed on the routing electrodes 36 and 37, respectively.

(Base substrate wafer cutting process)
FIG. 8 is an explanatory diagram of the base substrate wafer cutting step S35. In FIG. 8, the lead-out electrodes 36 and 37 and the bumps B are not shown for easy viewing of the drawing.
In the base substrate wafer manufacturing step S30, finally, a base substrate wafer cutting step S35 (corresponding to “second wafer cutting step” in the claims) is performed.
As shown in FIG. 8, in the base substrate wafer cutting step S35, four of the peripheral portions of the substantially disk-shaped lid substrate wafer 50 are cut out to form lid substrate wafer positioning side surfaces 41a, 41b, 41c (invoice). And a relief portion 43 corresponding to the anode connection portion 53 of the lid substrate wafer 50. The excision method in the base substrate wafer cutting step S35 is the same as the lid substrate wafer cutting step S25, and thus the description thereof is omitted.

  Each base substrate wafer positioning side surface 41a, 41b, 41c is formed in a flat surface along each lid substrate wafer positioning side surface 51a, 51b, 51c. The intersection angle between the base substrate wafer positioning side surfaces 41a and 41c and the base substrate wafer positioning side surface 41b is about 90 °, which is the same as the intersection angle between the lid substrate wafer positioning side surfaces 51a and 51c and the lid substrate wafer positioning side surface 51b. Is set to

Further, on the opposite side of the base substrate wafer positioning side surface 41b across the center of the base substrate wafer 40, the peripheral edge portion of the base substrate wafer 40 is cut away to form a relief portion 43. The escape portion 43 is formed substantially parallel to the base substrate wafer positioning side surface 41b, and the intersection angle with the base substrate wafer positioning side surfaces 41a and 41c is set to about 90 °. By forming the escape portion 43, the base substrate wafer 40 is formed in a substantially rectangular shape in plan view. In the joining step S70 described later, the anode connecting portion 53 protrudes from the peripheral edge portion of the base substrate wafer 40 by providing the escape portion 43. Then, interference between the anode electrode 85 (see FIG. 9) connected to the anode connection portion 53 of the lid substrate wafer 50 and the base substrate wafer 40 is avoided.
When the base substrate wafer positioning side surfaces 41a, 41b, 41c and the relief portion 43 are formed on the base substrate wafer 40, the base substrate wafer manufacturing step S30 is completed.

(Mounting step S50)
Next, a mounting step S50 is performed in which the piezoelectric vibrating reed 4 is bonded onto the routing electrodes 36 and 37 of the base substrate wafer 40 via the bumps B. Specifically, the base portion 12 of the piezoelectric vibrating piece 4 is placed on the bump B, and ultrasonic vibration is applied while pressing the piezoelectric vibrating piece 4 against the bump B while heating the bump B to a predetermined temperature. As a result, as shown in FIG. 3, the base 12 is mechanically fixed to the bump B in a state where the vibrating arms 10 and 11 of the piezoelectric vibrating piece 4 are lifted from the inner surface U of the base substrate wafer 40.

(Positioning process)
FIG. 9 is an explanatory diagram of the positioning step S61 and the clamping step S63.
Next, a positioning step S61 for determining the relative position of each wafer is performed.
As shown in FIG. 9, in the positioning step S61, the spacer 77 is disposed between the base substrate wafer 40 and the lid substrate wafer 50, and the relative positions of the base substrate wafer 40 and the lid substrate wafer 50 are changed. Determined and overlapped.

In the positioning step S61, the relative positions of the base substrate wafer 40 and the lid substrate wafer 50 are determined by the following procedure.
First, a dummy wafer 70 having the same outer shape as the base substrate wafer 40 is prepared. The dummy wafer 70 is formed in a substantially rectangular shape like the base substrate wafer 40, and has dummy wafer positioning side surfaces 71 a, 71 b, 71 c and a dummy wafer side relief portion 73. The dummy wafer 70 is provided so as to suppress the occurrence of a discharge phenomenon in a bonding step S70 described later and stably perform anodic bonding.
Subsequently, the base substrate wafer 40 is placed on the dummy wafer 70. The outer surface L of the base substrate wafer 40 and the main surface of the dummy wafer 70 are brought into contact with each other, and the dummy wafer 70 and the base substrate wafer 40 are arranged to overlap each other.

  Subsequently, a plurality (three in this embodiment) of spacers 77 are arranged on the inner surface U of the base substrate wafer 40. The spacer 77 is a flat plate member having a substantially rectangular shape in plan view with a thickness of, for example, about 0.1 mm. Each spacer 77 is arranged at the edge of the inner surface U of the base substrate wafer 40 so that the longitudinal direction of the spacer 77 and the base substrate wafer positioning side surfaces 41a, 41b, 41c intersect each other. Further, the spacer 77 is arranged outside the cutting line M shown in FIG. 8 so as not to damage the lead-out electrodes 36, 37 (see FIG. 6) formed on the inner surface U of the base substrate wafer 40.

  Subsequently, the bonding substrate 35 of the lid substrate wafer 50 is brought into contact with the spacer 77, and the lid substrate wafer 50 is disposed. At this time, the spacer 77 is sandwiched between the base substrate wafer 40 and the lid substrate wafer 50. Here, since the spacer 77 has a thickness of about 0.1 mm, the thickness of the spacer 77 is substantially the same between the inner surface U of the base substrate wafer 40 and the bonding film 35 of the lid substrate wafer 50. The same gap is formed.

  Subsequently, after the dummy wafer 70, the base substrate wafer 40, the spacer 77, and the lid substrate wafer 50 are stacked in this order, the relative positions in the direction along the main surface of each wafer are positioned. Each wafer is positioned using a positioning jig 80 (80b, 80c).

The positioning jig 80 is a member made of metal, resin, or the like having a long quadrangular prism shape. One side surface of the positioning jig 80 is a rectangular positioning surface 81.
The positioning jig 80 is arranged in a state where the longitudinal direction is along each of the wafer positioning side surfaces 41, 51, 71 and the positioning surface 81 and each of the wafer positioning side surfaces 41, 51, 71 are opposed to each other.
The length of the positioning surface 81 in the longitudinal direction is set shorter than the length of each wafer positioning side surface 41, 51, 71 so as not to interfere with the spacer 77.
The lateral direction of the positioning surface 81 is set to be thicker than the total thickness of the dummy wafer 70, the base substrate wafer 40 and the spacer 77. Thereby, in positioning process S61, the positioning surface 81 of the positioning jig 80 and each wafer positioning side surface 41, 51, 71 are reliably contact | abutted.

Further, the lateral direction of the positioning surface 81 is set to be thinner than the total thickness of the dummy wafer 70, the base substrate wafer 40, the spacer 77, and the lid substrate wafer 50. Although details will be described later, in the clamping step S63, the wafers 40, 50, 70 and the spacer 77 are securely clamped without being interrupted by the spacer 77.
Further, the lateral direction of the positioning surface 81 is set to be thinner than the total thickness of the dummy wafer 70, the base substrate wafer 40, and the lid substrate wafer 50. Although details will be described later, in the bonding step S70, the base substrate wafer 40 and the lid substrate wafer 50 are reliably bonded without being interrupted by the spacer 77.

Specifically, the relative positions of the wafers are determined as follows using two positioning jigs 80b and 80c.
First, the positioning surface 81b of one positioning jig 80b is arranged to face the positioning side surface 41b of the base substrate wafer 40, the positioning side surface 51b of the lid substrate wafer 50, and the positioning side surface 71b of the dummy wafer 70. Further, the positioning surface 81c of the other positioning jig 80c is disposed to face the positioning side surface 41c of the base substrate wafer 40, the positioning side surface 51c of the lid substrate wafer 50, and the positioning side surface 71c of the dummy wafer 70.

  Next, the positioning side surface 41b of the base substrate wafer 40, the positioning side surface 51b of the lid substrate wafer 50, and the positioning side surface 71b of the dummy wafer 70 are brought into contact with and brought into contact with the positioning surface 81b of one positioning jig 80b. Accordingly, the relative positions of the base substrate wafer 40, the lid substrate wafer 50, and the dummy wafer 70 are determined in a direction orthogonal to the positioning surface 81b of one positioning jig 80b.

Next, the positioning side surface 41c of the base substrate wafer 40, the positioning side surface 51c of the lid substrate wafer 50, and the positioning side surface 71c of the dummy wafer 70 are brought into contact with and brought into contact with the positioning surface 81c of the other positioning jig 80c. Thus, the relative positions of the base substrate wafer 40, the lid substrate wafer 50, and the dummy wafer 70 are determined in a direction orthogonal to the positioning surface 81c of the other positioning jig 80c.
That is, the positioning jigs 80b and 80c arrange the positioning side surfaces 41b and 41c of the base substrate wafer 40, the positioning side surfaces 51b and 51c of the lid substrate wafer 50, and the positioning side surfaces 71b and 71c of the dummy wafer 70, respectively. The relative position of each wafer is determined.
Thus, the positioning step S61 is completed.

(Clamping process)
Subsequently, a clamping step S63 is performed in which the base substrate wafer 40, the lid substrate wafer 50, and the dummy wafer 70 are clamped together with the spacers 77 by a pair of clamp jigs 75 (75a, 75b).
The pair of clamp jigs 75a and 75b are flat plate members made of metal or the like whose outer shape in plan view is larger than that of each of the wafers 40, 50, and 70. One clamp jig 75a is disposed in contact with the outer surface (lower surface in FIG. 9) of the dummy wafer 70. The other clamping jig 75b is disposed in contact with the outer surface (the upper surface in FIG. 9) of the lid substrate wafer 50. Then, with the relative positions of the wafers 40, 50, 70 determined by the positioning step S61, the spacers 77 are sandwiched from both sides in the thickness direction of the wafers 40, 50, 70.
The pair of clamp jigs 75a and 75b is provided with a holding mechanism (not shown) that can hold the wafers 40, 50, and 70, and the wafers 40, 50, and 70 are positioned with high accuracy. It is pinched and held as it is.

Here, as described above, the lateral direction of the positioning surface 81 of the positioning jig 80 is set to be thinner than the total thickness of the dummy wafer 70, the base substrate wafer 40, the spacer 77, and the lid substrate wafer 50. Therefore, when the wafers 40, 50, 70 and the spacer 77 are sandwiched between the pair of clamp jigs 75a, 75b, the positioning jig 80 is not sandwiched between the clamp jigs 75a, 75b. That is, the pair of clamp jigs 75 a and 75 b can sandwich the dummy wafer 70, the base substrate wafer 40, the spacer 77, and the lid substrate wafer 50 without being blocked by the positioning jig 80.
Thus, the sandwiching step S63 is completed.

(Preheating process)
Subsequently, prior to a bonding step S70 described later, a preliminary heating step S65 is performed in which the base substrate wafer 40 and the lid substrate wafer 50 are heated in advance at a predetermined temperature to release outgas.
Preheating of the base substrate wafer 40 and the lid substrate wafer 50 is performed using a hot plate (not shown). Specifically, a hot plate is brought into contact with the outer main surfaces of the clamp jigs 75a and 75b, and the base substrate wafer 40 and the lid substrate wafer 50 are, for example, 350 ° C. to 450 ° C. via the clamp jigs 75a and 75b. Heat to be. As a result, the organic solvent, binder, moisture, etc. remaining inside the base substrate wafer 40 and the lid substrate wafer 50 are evaporated, and carbon monoxide (CO), carbon dioxide (CO ₂ ), water vapor (H ₂ ). Outgas such as O) is discharged in advance. Then, after the elapse of a predetermined time (for example, a time when it is assumed that outgas is completely released), the preheating step S65 is ended.

(Joining process)
FIG. 10 is an explanatory diagram of the joining step S70.
Next, a bonding step S70 for anodic bonding of the lid substrate wafer 50 and the base substrate wafer 40 is performed. Specifically, anodic bonding is performed according to the following procedure.
First, the base substrate wafer 40, the lid substrate wafer 50, the dummy wafer 70, and the spacer 77 are transferred into the vacuum chamber 67 while being clamped and held by the clamp jigs 75a and 75b. A vacuum pump P is connected to the vacuum chamber 67, and the pressure in the vacuum chamber 67 can be adjusted by the vacuum pump P.

  Subsequently, the bonding film 35 of the lid substrate wafer 50 is connected to the anode electrode 85 of the power source 78, and the base substrate wafer 40 is connected to the cathode electrode 86 of the power source 78. Thereafter, the vacuum pump P is operated and the vacuum chamber 67 is evacuated.

Subsequently, the spacer 77 is pulled out, and the bonding film 35 of the lid substrate wafer 50 and the inner surface U of the base substrate wafer 40 are brought into contact with each other.
Here, as described above, the lateral direction of the positioning surface 81 of the positioning jig 80 is set to be thinner than the total thickness of the dummy wafer 70, the base substrate wafer 40, and the lid substrate wafer 50. For this reason, when the wafers 40, 50, and 70 are clamped by the pair of clamp jigs 75a and 75b after the spacer 77 is pulled out, the positioning jig 80 is not clamped by the clamp jigs 75a and 75b. That is, the pair of clamp jigs 75a and 75b can hold the wafers 40, 50, and 70 without being blocked by the positioning jig 80 even after the spacer 77 is pulled out.

Subsequently, the lid substrate wafer 50 is pressed against the base substrate wafer 40 with a predetermined pressing force (for example, about 500 N) by a pressure device (not shown). Then, while heating the base substrate wafer 40 and the lid substrate wafer 50 to a predetermined bonding temperature (for example, about 350 ° C. to 400 ° C.), a voltage of about 500 V is applied between the electrodes.
Thereby, the lid substrate wafer 50 and the base substrate wafer 40 can be anodically bonded, and the wafer body 60 shown in FIG. 6 can be obtained.
Above, joining process S70 is complete | finished.

(External electrode formation process)
Next, a conductive material is patterned on the outer surface L of the base substrate wafer 40 to form a plurality of pairs of external electrodes 38 and 39 (see FIG. 3) electrically connected to the pair of through electrodes 32 and 33, respectively. An external electrode forming step S80 is performed. Through this process, the piezoelectric vibrating reed 4 is electrically connected to the external electrodes 38 and 39 via the through electrodes 32 and 33.

(Fine adjustment process)
Next, a fine adjustment step S90 for finely adjusting the frequency of each piezoelectric vibrator 1 sealed in the cavity C in the state of the wafer body 60 is performed. By this step, the frequency of the piezoelectric vibrator 1 is kept within the range of the nominal frequency.

(Cutting process)
After the fine adjustment of the frequency, a cutting step S100 is performed for cutting the bonded wafer body 60 along the cutting line M shown in FIG. Thereby, the wafer body 60 is separated into a plurality of piezoelectric vibrators 1.

(Electrical characteristics inspection)
Thereafter, an internal electrical characteristic inspection S110 is performed. That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of resonance frequency and resonance resistance value), etc. of the piezoelectric vibrating piece 4 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 1.

(effect)
According to this embodiment, the base substrate wafer positioning side surfaces 41b and 41c and the lid substrate wafer positioning side surfaces 51b and 51c are brought into contact with the positioning surfaces 81b and 81c of the positioning jigs 80b and 80c. The wafer positioning side surfaces 41b and 41c and the corresponding lid substrate wafer positioning side surfaces 51b and 51c can be arranged flush with each other. Therefore, the positioning of the base substrate wafer 40 and the lid substrate wafer 50 can be performed easily and accurately.
Further, even if a positional deviation between the base substrate wafer 40 and the lid substrate wafer 50 occurs between the positioning step S61 and the joining step S70, the positioning surfaces 81b and 81c of the positioning jigs 80b and 80c are moved. The base substrate wafer 40 and the lid substrate wafer 50 can be positioned again easily and accurately simply by bringing the base substrate wafer positioning side surfaces 41b and 41c and the lid substrate wafer positioning side surfaces 51b and 51c into contact with each other.

Further, according to the present embodiment, after the positioning step S61, the base substrate wafer 40, the lid substrate wafer 50, and the spacer 77 are sandwiched by the clamp jigs 75a and 75b, whereby the base substrate wafer 40 and the lid substrate are sandwiched. The wafer 50 can be held while being positioned with high accuracy. Accordingly, it is possible to prevent the positional deviation between the base substrate wafer 40 and the lid substrate wafer 50 while the spacer 77 is sandwiched between the positioning step S61 and the joining step S70.
Further, after the preheating step S65, when the spacer 77 is pulled out and the bonding step S70 is performed, the positioning jigs 80b and 80c are positioned even if the base substrate wafer 40 and the lid substrate wafer 50 are misaligned. By simply bringing the base substrate wafer positioning side surfaces 41b and 41c and the lid substrate wafer positioning side surfaces 51b and 51c into contact with the surfaces 81b and 81c, the positioning can be performed again easily and accurately.

  Further, according to the present embodiment, since the escape portion 43 is formed in the base substrate wafer cutting step S <b> 35, the anode electrode 85 connected to the anode connection portion 53 of the lid substrate wafer 50 and the base substrate wafer 40. Can be prevented from interfering with each other. Therefore, the base substrate wafer 40 and the lid substrate wafer 50 can be easily and accurately positioned while performing anodic bonding reliably.

  Further, according to the present embodiment, since the piezoelectric vibrating reed 4 is enclosed in the package 9 that can easily and accurately position the base substrate wafer 40 and the lid substrate wafer 50, the performance can be reduced at a low cost. A good piezoelectric vibrator 1 can be provided.

(Oscillator)
Next, an embodiment of an oscillator according to the present invention will be described with reference to FIG.
As shown in FIG. 11, the oscillator 110 according to the present embodiment is configured by configuring the piezoelectric vibrator 1 as an oscillator electrically connected to the integrated circuit 111. The oscillator 110 includes a substrate 113 on which an electronic element component 112 such as a capacitor is mounted. An integrated circuit 111 for an oscillator is mounted on the substrate 113, and a piezoelectric vibrating piece of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 111. The electronic element component 112, the integrated circuit 111, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).

In the oscillator 110 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 4 and input to the integrated circuit 111 as an electric signal. The input electrical signal is subjected to various processes by the integrated circuit 111 and output as a frequency signal. Thereby, the piezoelectric vibrator 1 functions as an oscillator.
In addition, by selectively setting the configuration of the integrated circuit 111, for example, an RTC (real-time clock) module or the like as required, the operation date and time of the device or external device in addition to a single-function oscillator for a clock, etc. Functions such as controlling time and providing time and calendar can be added.

  According to the oscillator 110 of this embodiment, since the piezoelectric vibrator 1 having good performance at low cost is provided, the oscillator 110 having good performance at low cost can be provided.

(Electronics)
Next, an embodiment of an electronic apparatus according to the present invention will be described with reference to FIG. Note that a portable information device 120 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
First, the portable information device 120 of this embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the prior art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen. Further, when used as a communication device, it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.

  Next, the configuration of the portable information device 120 of this embodiment will be described. As shown in FIG. 12, the portable information device 120 includes the piezoelectric vibrator 1 and a power supply unit 121 for supplying power. The power supply unit 121 is made of, for example, a lithium secondary battery. The power supply unit 121 includes a control unit 122 that performs various controls, a clock unit 123 that counts time, a communication unit 124 that communicates with the outside, a display unit 125 that displays various information, and the like. A voltage detection unit 126 that detects the voltage of the functional unit is connected in parallel. Power is supplied to each functional unit by the power supply unit 121.

  The control unit 122 controls each function unit to control operation of the entire system such as transmission and reception of audio data, measurement and display of the current time, and the like. The control unit 122 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area for the CPU.

  The timer unit 123 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1. When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece vibrates, and the vibration is converted into an electric signal by the piezoelectric characteristics of the crystal, and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 122 through the interface circuit, and the current time, current date, calendar information, and the like are displayed on the display unit 125.

The communication unit 124 has functions similar to those of a conventional mobile phone, and includes a radio unit 127, a voice processing unit 128, a switching unit 129, an amplification unit 130, a voice input / output unit 131, a telephone number input unit 132, a ring tone generation unit. 133 and a call control memory unit 134.
The radio unit 127 exchanges various data such as audio data with the base station via the antenna 135. The audio processing unit 128 encodes and decodes the audio signal input from the radio unit 127 or the amplification unit 130. The amplifying unit 130 amplifies the signal input from the audio processing unit 128 or the audio input / output unit 131 to a predetermined level. The voice input / output unit 131 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.

In addition, the ring tone generator 133 generates a ring tone in response to a call from the base station. The switching unit 129 switches the amplifying unit 130 connected to the voice processing unit 128 to the ringing tone generating unit 133 only when an incoming call is received, so that the ringing tone generated by the ringing tone generating unit 133 passes through the amplifying unit 130. To the audio input / output unit 131.
Note that the call control memory unit 134 stores a program related to incoming / outgoing call control of communication. The telephone number input unit 132 includes, for example, number keys from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.

  The voltage detection unit 126 detects the voltage drop and notifies the control unit 122 when the voltage applied to each functional unit such as the control unit 122 by the power supply unit 121 falls below a predetermined value. . The predetermined voltage value at this time is a value set in advance as a minimum voltage necessary to stably operate the communication unit 124, and is, for example, about 3V. Upon receiving the voltage drop notification from the voltage detection unit 126, the control unit 122 prohibits the operations of the radio unit 127, the voice processing unit 128, the switching unit 129, and the ring tone generation unit 133. In particular, it is essential to stop the operation of the wireless unit 127 with high power consumption. Further, the display unit 125 displays that the communication unit 124 has become unusable due to insufficient battery power.

That is, the operation of the communication unit 124 can be prohibited by the voltage detection unit 126 and the control unit 122, and that effect can be displayed on the display unit 125. This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 125.
In addition, the function of the communication part 124 can be stopped more reliably by providing the power cutoff part 136 that can selectively cut off the power supply of the part related to the function of the communication part 124.

  According to the portable information device 120 of this embodiment, since the piezoelectric vibrator 1 having good performance at low cost is provided, the portable information device 120 having good performance at low cost can be provided.

(Radio watch)
Next, an embodiment of a radio timepiece according to the present invention will be described with reference to FIG.
As shown in FIG. 13, the radio-controlled timepiece 140 according to the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 141. The radio-controlled timepiece 140 receives a standard radio wave including timepiece information and is accurate. It is a clock with a function of automatically correcting and displaying the correct time.
In Japan, there are transmitting stations (transmitting stations) that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves. Long waves such as 40 kHz or 60 kHz have both the property of propagating the ground surface and the property of propagating while reflecting the ionosphere and the ground surface, so the propagation range is wide, and the above two transmitting stations cover all of Japan. doing.

Hereinafter, the functional configuration of the radio timepiece 140 will be described in detail.
The antenna 142 receives a long standard wave of 40 kHz or 60 kHz. The long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave. The received long standard wave is amplified by the amplifier 143 and filtered and tuned by the filter unit 141 having the plurality of piezoelectric vibrators 1.
The piezoelectric vibrator 1 according to this embodiment includes crystal vibrator portions 148 and 149 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency.

Further, the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 144.
Subsequently, the time code is taken out via the waveform shaping circuit 145 and counted by the CPU 146. The CPU 146 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 147, and accurate time information is displayed.
Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator portions 148 and 149 are preferably vibrators having the tuning fork type structure described above.

  In addition, although the above-mentioned description was shown in the example in Japan, the frequency of the long standard wave is different overseas. For example, in Germany, a standard radio wave of 77.5 KHz is used. Therefore, when the radio timepiece 140 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.

  According to the radio-controlled timepiece 140 of the present embodiment, the radio-controlled timepiece 140 having good performance at low cost can be provided since the piezoelectric vibrator 1 having good performance at low cost is provided.

  The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.

  In the present embodiment, the method for manufacturing the package 9 of the present invention has been described by taking the piezoelectric vibrator 1 using the tuning-fork type piezoelectric vibrating piece 4 as an example. However, the above-described package manufacturing method of the present invention may be adopted for a piezoelectric vibrator using, for example, an AT-cut type piezoelectric vibrating piece (thickness sliding vibrating piece).

  In this embodiment, the piezoelectric vibrator 1 is manufactured by enclosing the piezoelectric vibrating reed 4 inside the package 9 according to the present invention. However, a device other than the piezoelectric vibrator 1 can be manufactured by enclosing an electronic component other than the piezoelectric vibrating reed 4 inside the package 9.

  In the preheating step S65 of the present embodiment, three spacers 77 are used to form a gap between the lid substrate wafer 50 and the base substrate wafer 40. However, for example, the gap may be formed by using two spacers 77. However, this embodiment is advantageous in that the gap can be formed stably and reliably.

  In the positioning step S61 of the present embodiment, two positioning jigs 80 are used to determine the relative positions of the lid substrate wafer 50 and the base substrate wafer 40. However, for example, the relative positions of the lid substrate wafer 50 and the base substrate wafer 40 may be determined using three positioning jigs 80.

  In this embodiment, the crossing angle of the positioning side surfaces formed on each wafer is set to about 90 °. However, the crossing angle of the positioning side surfaces is not limited to about 90 °, and at least two positioning side surfaces are It only has to cross.

DESCRIPTION OF SYMBOLS 1 ... Piezoelectric vibrator 4 ... Piezoelectric vibration piece 9 ... Package 35 ... Bonding film (bonding material) 40 ... Base substrate wafer (second wafer) 41 (41b, 41c) Wafer positioning side surface for base substrate (second wafer positioning side surface) 43... Relief portion 50... Wafer for lid substrate (first wafer) 51 (51 b, 51 c). 1 wafer positioning side) 53... Anode connecting portion 75 (75a, 75b)... Clamping clamp 77 .. spacer 80 .. positioning jig 81 (81b, 81c). · Oscillator 120 ··· Portable information device (electronic device) 123 ··· Timing unit 140 ··· Radio clock 141 ··· Filter portion S25 · · · First wafer cutting step S35 · .... Second wafer cutting process S61 ... Positioning process S63 ... Holding process S65 ... Preheating process S70 ... Joining process

Claims (7)

In a manufacturing method of a package capable of enclosing an electronic component between a first wafer and a second wafer bonded to each other,
A first wafer cutting step of cutting at least two peripheral edges of the first wafer to form at least two first wafer positioning side surfaces intersecting each other;
At least two peripheral portions of the second wafer are cut away to form at least two second wafer positioning side surfaces that intersect with each other, and an intersecting angle of the at least two second wafer positioning side surfaces is set to the first wafer positioning side surface. A second wafer cutting step set to correspond to the crossing angle;
A positioning step of determining and overlaying relative positions of the wafers in a direction along the main surface of the wafers;
A bonding step of bonding the first wafer and the second wafer after the positioning step;
With
In the positioning step, a positioning surface of a positioning jig is brought into contact with each positioning side surface to determine a relative position of each wafer. A method of manufacturing a package according to claim 1,
In the positioning step, the relative positions of the respective wafers are determined and superimposed while arranging a spacer between the first wafer and the second wafer,
After the positioning step,
A clamping step of clamping the wafers together with the spacers with a clamping jig from both sides in the thickness direction of the wafers;
A preheating step of heating the first wafer and the second wafer in advance at a predetermined temperature before the bonding step to release outgas;
A method for manufacturing a package, comprising: A method of manufacturing a package according to claim 1 or 2,
Forming a bonding material on the inner surface of the first wafer;
Forming an anode connection portion in the bonding material at a peripheral edge portion of the first wafer other than the first wafer positioning side surface;
In the second wafer cutting step, in addition to forming the second wafer positioning side surface, a position corresponding to the anode connecting portion is cut out to form a relief portion exposing the anode connecting portion,
In the bonding step, the first wafer and the second wafer are anodically bonded using the bonding material of the first wafer as an anode and the second wafer as a cathode.   A piezoelectric vibrator, wherein a piezoelectric vibrating piece is enclosed as the electronic component in the package manufactured by the package manufacturing method according to claim 1.   An oscillator, wherein the piezoelectric vibrator according to claim 4 is electrically connected to an integrated circuit as an oscillator.   5. An electronic apparatus, wherein the piezoelectric vibrator according to claim 4 is electrically connected to a time measuring unit.   A radio-controlled timepiece wherein the piezoelectric vibrator according to claim 4 is electrically connected to a filter portion.

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