JP2013016674A - Method for manufacturing buffer layer and photoelectric conversion element including the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for depositing a buffer layer using a CBD method, by which a buffer layer having good adhesion can be manufactured with high productivity while suppressing the formation of a particulate solid matter.SOLUTION: A photoelectric conversion element 1 (1') includes a lower electrode layer 20, a photoelectric conversion semiconductor layer 30 mainly comprising a compound semiconductor, a buffer layer 40, and a translucent conductive layer 50 which are laminated in order on a substrate 10. A method for manufacturing the buffer layer 40 in the photoelectric conversion element 1 (1') includes: a step (A) of applying a precursor layer 40R containing a metal salt hydrate on the photoelectric conversion semiconductor layer 30 to form a film; a step (B) of performing insolubilization treatment to the precursor layer 40R; and a step (C) of immersing a surface at least on a side of a precursor layer 40P of the substrate 10 having been subjected to the insolubilization treatment into an alkaline reaction liquid L1 (L2) containing a sulfur source to form the buffer layer 40 by means of a chemical bath deposition process.

Description

  The present invention relates to a compound semiconductor photoelectric conversion element and a method for producing a buffer layer thereof.

  A photoelectric conversion element including a photoelectric conversion layer and an electrode connected to the photoelectric conversion layer is used for applications such as solar cells. Conventionally, in the case of solar cells, Si-based solar cells using bulk single crystal Si or polycrystalline Si, or thin-film amorphous Si have been mainstream, but research and development of Si-independent compound semiconductor solar cells has been made. ing. Known compound semiconductor solar cells include bulk systems such as GaAs systems and thin film systems such as CIS or CIGS systems composed of group Ib elements, group IIIb elements, and group VIb elements. CI (G) S is a compound semiconductor represented by the general formula Cu1-zIn1-xGaxSe2-ySy (where 0≤x≤1, 0≤y≤2, 0≤z≤1), and x = 0 Is the CIS system, and when x> 0 is the CIGS system. Hereinafter, CIS and CIGS are collectively referred to as “CI (G) S”.

  In conventional thin-film photoelectric conversion elements such as CI (G) S, a CdS buffer layer and an environmental load are generally placed between a photoelectric conversion layer and a translucent conductive layer (transparent electrode) formed thereon. In consideration, a ZnS buffer layer not containing Cd is provided. The buffer layer plays a role such as (1) prevention of recombination of photogenerated carriers, (2) band discontinuous matching, (3) lattice matching, and (4) coverage of the surface irregularities of the photoelectric conversion layer. In the case of CI (G) S, etc., the surface irregularity of the photoelectric conversion layer is relatively large, and in particular, the film formation by the CBD (Chemical Bath Deposition) method, which is a liquid phase method, because it is necessary to satisfy the condition (4) well. Is preferred.

  In order to form a buffer layer that satisfactorily covers relatively large surface irregularities by the CBD method, it takes time compared to the formation time of the other layers of the photoelectric conversion element. This is one of the rate limiting processes in the whole process. Therefore, in the current CBD process, it is necessary to operate a plurality of CBD film forming apparatuses in parallel, and in film formation of the buffer layer, there is a problem of achieving both good coverage and productivity.

In order to improve productivity, it is preferable to increase the deposition rate of the buffer layer. However, in the film formation by the CBD method, precipitation of the target compound (buffer layer) on the photoelectric conversion layer (reaction accompanied by heterogeneous nucleation) and precipitation of particles (colloid) in the reaction solution (uniform nucleation) Accompanying reactions) proceed simultaneously. In the buffer layer, if the particles generated in the solution adhere to the surface of the deposited film, a buffer layer with the particles attached is formed. When a photoelectric conversion element is formed using the buffer layer to which the particles are attached, the cause of the leak path Therefore, the performance of the CI (G) S thin film photoelectric conversion element can be deteriorated. In particular, since the particulate solids (also called secondary aggregates and secondary particles) formed by agglomerating particles having a primary particle size of the order of several tens to several hundreds of nanometers are as large as μm units, Adhesion tends to cause a leak path.
For this reason, it is necessary to increase the deposition rate of the buffer layer while suppressing the adhesion of particulate solids including particles and particle aggregates to the buffer layer surface. Note that details of homogeneous nucleation and heterogeneous nucleation are described in Non-Patent Document 1, for example.

  Patent Documents 1 to 4 propose a method of removing particulate solid matter adhering to the formed buffer layer surface with an aqueous cleaning solution. As in these patent documents, by introducing a buffer layer cleaning step after CBD, particulate solid matter on the surface of the buffer layer, which has been increased with an increase in film formation rate by the CBD method, can be removed to some extent. . However, since the deposition amount of particles (colloid) becomes very large in the film formation under the condition of a high film formation speed realized by simply increasing the film formation temperature, the cleaning process takes time. Therefore, in the formation of the buffer layer by the CBD method, it is preferable to form the film without attaching particulate solids as much as possible.

  Non-Patent Document 2 describes that particle adhesion to the surface of a ZnS (O, OH) film can be suppressed by performing CBD film formation while applying ultrasonic waves using a solution in which zinc sulfate, thiourea, and ammonia are dissolved. Is described. As the reaction solution, a solution in which zinc sulfate, thiourea and ammonia are dissolved is used.

JP 2007-242646 A JP 2004-015039 A Special table 2008-510310 gazette WO2008 / 120306 JP 2007-242646 A

B. C. Bunker, P. C. Rieke, B. J. Tarasevich, A. A. Campbell, G. E. Fryxell, G. L. Graff, L. Song, J. Liu, J. W. Vriden, G. L. McVay, Science, 264 (1994) 48. Akira Ichiboshi, Masashi Hongo, Takuya Akamine, Tsukasa Dobashi and Tokio Nakada, Solar Energy Materials and Solar Cells, 90 (2006) 3130.

  As in Non-Patent Document 2, if ultrasonic waves are applied during film formation by CBD, adhesion of particulate solids to the precipitation surface can be suppressed. However, in this method, the generation and growth of particles (colloid) in the reaction solution is promoted, and the amount of particles (colloid) floating in the reaction solution increases, so that the particulate solid on the surface of the deposited film. The possibility of adhesion will increase. Further, when a large amount of particles (colloid) is generated in the reaction solution, the same reaction solution cannot be used again for the CBD process. From the viewpoint of improving productivity, it is preferable that the reaction solution can be used as repeatedly as possible.

  As a method of improving the film formation rate by CBD by suppressing the generation of particles (colloid) itself, there is a method of providing a coating film of a dispersion liquid of fine particles functioning as a nucleus of crystal growth or a catalyst as an underlayer. However, since such an underlayer is merely coated without any interaction with the photoelectric conversion layer, the adhesion with the photoelectric conversion layer is weak and the buffer layer may be easily peeled off.

  On the other hand, Patent Document 5 discloses a method in which nuclei, which are the same or different types of particles as the buffer layer, are applied by the CBD method, and the buffer layer is formed using this as a starting point and / or as a catalyst (Claim 1). . However, since the CBD method is used to provide the core particles, the effect of improving the adhesion of the buffer layer can be obtained, but the effect of improving the film formation rate is not described at all and can be obtained. The nature is also low.

  The problem in the CBD method is not limited to the ZnS system.

  The present invention has been made in view of the above circumstances, and in the formation of a buffer layer by the CBD method, a buffer layer having good adhesion is produced with high productivity while suppressing generation of particles and particulate solids. It is for the purpose.

The method for producing the buffer layer of the present invention comprises:
In the method of manufacturing the buffer layer in the photoelectric conversion element in which a lower electrode layer, a photoelectric conversion semiconductor layer containing a compound semiconductor as a main component, a buffer layer, and a light-transmitting conductive layer are sequentially stacked on a substrate,
(A) applying and forming a precursor layer containing a metal salt hydrate on the photoelectric conversion semiconductor layer;
A step (B) of insolubilizing the precursor layer;
A step (C) of immersing at least the precursor layer side surface of the insolubilized substrate in an alkaline reaction solution containing a sulfur source to form the buffer layer by a chemical bath deposition method. It is characterized by this.

  Here, the insolubilization treatment refers to reducing the solubility of the layer containing the metal salt hydrate formed in step (A) in the reaction solution in step (C), and at the start of the reaction in step (C). The treatment is such that at least part of the metal salt hydrate or its anhydride remains in the layer. Such treatment includes a treatment for removing at least a part of the hydrated water of the metal salt hydrate.

  In the present specification, the main component means a component having a content of 80% by mass or more.

  The treatment for removing at least a part of the hydrated water of the metal salt hydrate is preferably heat treatment, the heating temperature is 30 ° C. to 300 ° C., and the heating time is 30 seconds to 30 hours. More preferred.

  Here, when the heating temperature is a heating means using a gas atmosphere such as an oven, the heating temperature is a heating means such as a hot plate or the like that heats the back surface of the substrate in contact with the heating surface. In this case, the temperature of the heating surface is used. The temperature measurement location is set near the center of the substrate installation location on the heating surface.

  In the step (A), the metal salt hydrate is preferably zinc acetate dihydrate and / or zinc sulfate heptahydrate.

  Moreover, the reaction liquid used in the step (C) preferably contains at least one metal element identical to the metal element contained in the metal salt hydrate used in the step (A). Moreover, as a sulfur source contained in the reaction solution, thiourea or a derivative thereof is preferable.

  In the step (C), it is preferable that the substrate temperature and / or the temperature of the reaction solution is 55 ° C to 95 ° C.

  The method for producing a buffer layer of the present invention preferably further includes a step (D) of heating the buffer layer at a temperature of 150 ° C. to 250 ° C. after the step (C).

The method for producing a photoelectric conversion element of the present invention includes a photoelectric conversion element in which a lower electrode layer, a photoelectric conversion semiconductor layer containing a compound semiconductor as a main component, a buffer layer, and a light-transmitting conductive layer are sequentially stacked on a substrate. In the manufacturing method of
The buffer layer is manufactured by the buffer layer manufacturing method of the present invention.

  As a method for producing a metal oxide structure in which rod-like crystals are formed with high orientation and high density on a substrate, the present inventor formed a layer containing metal acetate hydrate on a sapphire substrate, Has been filed for a method of growing rod-shaped crystals by soaking them in a reaction solution (Japanese Patent Laid-Open No. 2010-195628). In this application, as in the present invention, a layer containing a metal salt hydrate is applied and then insolubilized, and the base point of crystal growth is given as an underlayer. However, the effect obtained by JP 2010-195628 is to form rod-like crystals with high orientation and high density, and does not solve the above-described problems of the present invention. Therefore, JP 2010-195628 is not a motivation for the present invention.

  The method for producing a buffer layer according to the present invention includes a step of forming a precursor layer containing a metal salt hydrate and a step of insolubilizing the precursor layer before the step of forming a buffer layer by the CBD method. Yes. According to this method, since the metal ions in the insolubilized precursor layer function as a good reaction starting point in the CBD process, in the CBD method, particles (colloid) or particulate solids are generated in the reaction solution. In contrast, film deposition becomes dominant. At the same time, the controllability of the buffer layer composition is also increased. In addition, by using the metal salt precursor layer as an underlayer, metal ions in the precursor layer are sulfided and become part of the buffer layer in the initial reaction of the CBD method, so that the metal salt precursor layer is physically placed on the photoelectric conversion layer. In addition to being formed, the buffer layer is deposited in a form in which the denseness of the underlayer is increased, and the adhesion with the photoelectric conversion layer is improved. Therefore, according to the present invention, in the formation of a buffer layer by the CBD method, a buffer layer having good adhesion can be produced with high productivity while suppressing generation of particles or particulate solids.

The schematic sectional drawing which shows the manufacturing process of the buffer layer of 1st Embodiment which concerns on this invention, and a photoelectric conversion element. The schematic sectional drawing which shows the manufacturing process of the buffer layer and photoelectric conversion element of 2nd Embodiment which concern on this invention. TG curve in thermogravimetric differential thermal analysis (TG / DTA) of zinc acetate dihydrate. TG curve in thermogravimetric differential thermal analysis (TG / DTA) of zinc sulfate heptahydrate. Sectional drawing which represented typically the progress of the film-forming reaction of the buffer layer by the conventional CBD method. Sectional drawing which represented typically the progress of the film-forming reaction of the buffer layer of 1st Embodiment of this invention. Sectional drawing which represented typically the progress of the film-forming reaction of the buffer layer of 2nd Embodiment of this invention.

Hereinafter, the present invention will be described in detail.
"Manufacturing method of buffer layer and photoelectric conversion element"
The buffer layer and the method for manufacturing a photoelectric conversion element of the present invention will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing a manufacturing process of a buffer layer and a photoelectric conversion element according to the present invention. FIG. 1A and FIG. 1B are formed by the difference in the configuration of the reaction liquid in the buffer layer film forming step (d). The structure of the buffer layer to be formed is different. In the drawings of the present specification, the constituent elements of the respective parts are shown by appropriately changing the scale for easy visual recognition.

As shown in FIGS. 1A and 1B, the method for manufacturing a photoelectric conversion element of the present invention includes a lower electrode layer 20, a photoelectric conversion semiconductor layer 30 containing a compound semiconductor as a main component, and a buffer layer 40 ( 41, 42) and the photoelectric conversion element 1 (1 ′) (FIG. 1A (e), FIG. 1B (e)) in which the transparent conductive layer 50 is sequentially laminated,
A step (A) of applying and forming a precursor layer 40R containing a metal salt hydrate on the photoelectric conversion semiconductor layer 30;
A step (B) of insolubilizing the precursor layer 40R;
The surface of at least the precursor layer 40P side of the insolubilized substrate 10 is immersed in an alkaline reaction liquid L1 (L2) containing a sulfur source, and the buffer layer 40 (41, 42) is deposited by a chemical bath deposition method (CBD method). (C).

  The buffer layer 40 (41, 42) contains 20 mol% or more of metal sulfide, and is a mixed crystal of metal sulfide and metal oxide, or of metal sulfide, metal oxide, and metal hydroxide. A mixed crystal and a part of those amorphous compounds may be contained.

  The metal component of the buffer layer 40 (41, 42) is not particularly limited as long as it functions as a buffer layer, and examples thereof include Zn, Cd, In, Sn, etc., preferably Zn or Cd, and environmental load. From this point, Zn is most preferable. When the metal component is Zn, the buffer layer 40 (41, 42) contains 20 mol% or more of ZnS, and partially contains Zn (S, O), Zn (S, O, OH) is preferred.

  The buffer layer 40 (41, 42) may have a single layer structure or a laminated structure with other arbitrary layers.

  Hereinafter, each step will be described. As described above, FIG. 1A and FIG. 1B are different in the process (d) in each figure, and as a result, the configuration of the photoelectric conversion element 1 (1 ′) shown in (e) is different. Therefore, steps (A) and (B) are common.

<Process (A)>
First, the lower electrode layer 20 and the photoelectric conversion semiconductor layer 30 mainly composed of a compound semiconductor are formed on the substrate 10 (FIGS. 1A (a) and 1B (a)).

The substrate 10 is not particularly limited, and a glass substrate, a metal substrate such as stainless steel having an insulating film formed on the surface, and Al ₂ O ₃ is mainly used on at least one surface side of an Al base material mainly composed of Al. An anodized substrate on which an anodized film as a component is formed,
An anodic oxide film mainly composed of Al ₂ O ₃ is formed on at least one surface side of a composite base material in which an Al material mainly composed of Al is combined on at least one surface side of the Fe material mainly composed of Fe. Formed anodized substrate,
An anodic oxide film mainly composed of Al ₂ O ₃ is formed on at least one surface side of a substrate on which an Al film composed mainly of Al is formed on at least one surface side of an Fe material mainly composed of Fe. Formed anodized substrate,
And a resin substrate such as polyimide.

  As a method for continuously forming a film, a so-called roll using a supply roll obtained by winding a long flexible substrate in a roll shape and a winding roll for winding a film-formed substrate in a roll shape The roll-to-roll process is known, but because it can be produced by this method, metal substrates with an insulating film formed on the surface, anodized substrates, resin substrates, etc. The flexible substrate is preferable.

In consideration of thermal expansion coefficient, heat resistance, substrate insulation, etc., an anodic oxide film mainly composed of Al ₂ O ₃ was formed on at least one surface side of an Al base composed mainly of Al. Anodized substrate, Al ₂ O ₃ as a main component on at least one surface side of a composite base material in which an Al material containing Al as a main component is combined on at least one surface side of an Fe material containing Fe as a main component An anodized substrate on which an anodized film is formed, and at least one surface side of a base material on which an Al film mainly composed of Al is formed on at least one surface side of an Fe material containing Fe as a main component It is preferable that any one of the anodized substrates on which an anodized film composed mainly of Al ₂ O ₃ is formed.

  The lower electrode layer 20 is not particularly limited, and is preferably Mo, Cr, W, or a combination thereof, and Mo is particularly preferable. The film thickness of the lower electrode layer 20 is not limited and is preferably about 200 to 1000 nm.

  The main component of the photoelectric conversion semiconductor layer 30 is not particularly limited and is preferably a compound semiconductor having at least one chalcopyrite structure because high conversion efficiency is obtained. The Ib group element, the IIIb group element, and the VIb group More preferably, it is at least one compound semiconductor composed of an element.

As a main component of the photoelectric conversion semiconductor layer 30,
At least one group Ib element selected from the group consisting of Cu and Ag;
At least one group IIIb element selected from the group consisting of Al, Ga and In;
It is preferably at least one compound semiconductor comprising at least one VIb group element selected from the group consisting of S, Se, and Te.

As the compound semiconductor,
CuAlS ₂ , CuGaS ₂ , CuInS ₂ ,
CuAlSe ₂ , CuGaSe ₂ ,
AgAlS ₂ , AgGaS ₂ , AgInS ₂ ,
AgAlSe ₂ , AgGaSe ₂ , AgInSe ₂ ,
AgAlTe ₂ , AgGaTe ₂ , AgInTe ₂ ,
Cu (In, Al) Se ₂ , Cu (In, Ga) (S, Se) ₂ ,
Cu _1-z In _1-x Ga _x Se _2-y S _y (where 0 ≦ x ≦ 1, 0 ≦ y ≦ 2, 0 ≦ z ≦ 1) (CI (G) S),
Examples include Ag (In, Ga) Se ₂ and Ag (In, Ga) (S, Se) ₂ .

_{Further, Cu 2 ZnSnS 4, Cu 2} ZnSnSe 4, Cu 2 ZnSn (S, Se) may be a _four.

  The film thickness of the photoelectric conversion semiconductor layer 30 is not particularly limited, and is preferably 1.0 μm to 4.0 μm, and particularly preferably 1.5 μm to 3.5 μm.

  There is a high possibility that impurities such as copper selenide and copper sulfide remain on the surface of the photoelectric conversion semiconductor layer 30 after film formation in the case of a CI (G) S-based photoelectric conversion semiconductor layer. Therefore, it is preferable to perform surface treatment for the purpose of removing impurities. As the surface treatment liquid used for such surface treatment, for example, an ammonia-containing aqueous solution, a compound-containing aqueous solution having a cyano group or an amino group can be used.

  As the compound having a cyano group contained in the surface treatment liquid, potassium cyanide (KCN) is preferable. On the other hand, since KCN is a lethal compound and has a safety problem, it is more preferable to use a compound having an amino group.

  The compound having an amino group contained in the surface treatment liquid is preferably a compound having at least two amino groups in one molecule (hereinafter also simply referred to as an amino group-containing compound). Specifically, ethylenediamine (EDA ), Diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), or pentaethylenehexamine (PEHA), and these are preferably used alone, Two or more types may be appropriately mixed and used.

  These amino group-containing compounds are contained in the surface treatment solution in an amount of 1% by mass to 30% by mass, preferably 5% by mass to 25% by mass, and more preferably 10% by mass to 20% by mass.

  Hydrogen peroxide is contained in the surface treatment solution in an amount of 0.01% by mass to 10% by mass, preferably 0.05% by mass to 8% by mass, and more preferably 0.1% by mass to 5% by mass.

  The surface treatment liquid can be prepared by dissolving the amino group-containing compound and hydrogen peroxide in water.

  The time for which the photoelectric conversion semiconductor layer is brought into contact with the surface treatment liquid depends on the concentration of the surface treatment liquid, but is preferably about several seconds to several tens of minutes.

  By performing the surface treatment (impurity removal) as described above, the in-plane variation of the photoelectric conversion efficiency of the photoelectric conversion element can be reduced to increase the conversion efficiency.

  When the surface treatment step is performed, the substrate is preferably washed with water. The temperature of water is preferably 20 ° C. or higher. Here, the water washing method may be a method of immersing in a water tank and washing with water or shower washing. As washing water, pure water, ion exchange water, industrial water, or the like can be used.

  After rinsing with water, if the substrate is immersed in the reaction solution of the CBD process while water is attached to the substrate, the concentration of the reaction solution decreases. Therefore, the water can be removed before the CBD step so as not to reduce the concentration of the reaction solution. preferable. Specifically, the water adhering to the substrate is removed by blowing dry air or nitrogen on the front and back surfaces of the substrate. At this time, warm air may be blown.

  The inventor has found that it is preferable to form the buffer layer 40 (41, 42) within 60 minutes, preferably within 10 minutes after the surface treatment. Therefore, it is preferable to form the buffer layer 40 (41, 42) within 60 minutes, preferably within 10 minutes after the surface treatment, in the next step of coating the precursor layer 40R. Here, “within 60 minutes after the surface treatment” means a time from immediately after the completion of the surface treatment, and within 60 minutes including a water washing step and a drying step after the surface treatment.

  Next, a precursor layer (precursor layer) 40R is applied and formed on the photoelectric conversion semiconductor layer 30 (FIGS. 1A (b) and 1B (b)). The precursor layer 40R is a layer containing a metal salt hydrate.

  Although it does not restrict | limit especially as a metal salt hydrate contained in the precursor layer 40R, It is preferable that it is a metal salt hydrate of Zn or Cd suitable as a metal component of the buffer layer 40, and it is more preferable that it is Zn salt hydrate. . As the Zn salt hydrate, zinc acetate dihydrate and zinc sulfate heptahydrate are preferable.

  The coating solution for the precursor layer 40R is prepared by dissolving the metal salt hydrate in a solvent that can suitably dissolve the metal salt hydrate. Examples of the solvent include anhydrous ethanol.

  The concentration of the metal salt hydrate in the coating solution is not limited as long as it is a concentration that dissolves in the solvent used, but may be, for example, 0.01M. However, since the thickness of the coated film varies depending on the concentration of the coating solution, attention may be required.

  The obtained coating solution of metal salt hydrate is formed on the photoelectric conversion semiconductor layer 30 by coating. The method for coating film formation is not particularly limited, and a general coating method such as a spin coating method can be employed. It is preferable that the precursor layer 40R be naturally dried.

<Process (B)>
Next, the precursor layer 40P is insolubilized to form an insolubilized precursor layer 40P (FIGS. 1A (c) and 1B (c)). As already described, the insolubilization treatment includes reducing the solubility of the precursor layer 40R in the CBD reaction solution used in the next step (C), and hydrating the metal salt of the layer at the start of the reaction in the step (C). The treatment is not particularly limited as long as at least a part of the product or its anhydride remains. Such treatment includes a treatment (dehydration treatment) for removing at least a part of the hydrated water of the metal salt hydrate.

  The treatment for removing at least a part of the hydrated water of the metal salt hydrate is not particularly limited, and examples thereof include a heat treatment or a UV irradiation treatment, and the heat treatment is simple and preferable. The temperature of the heat treatment is preferably a temperature that does not damage the layers other than the precursor layer 40R and the substrate as much as possible, and may be appropriately set in consideration of the heat resistance of the substrate and other layers.

  FIG. 2 shows an example of a TG curve of zinc acetate dihydrate, and FIG. 3 shows an example of a TG curve of zinc sulfate heptahydrate. FIG. 2 shows that the dehydration of n moles of hydrated water (n = 1.91) out of the 2 moles of hydrated water, the heat treatment at 60 ° C. and 65 ° C. in about 8 hours. It has been shown that it can be implemented. FIG. 3 also shows that dehydration of n moles of hydration water (n = 5.75) out of 7 moles of hydration water can be performed at 60 ° C. in about 90 minutes. Yes.

  Therefore, when zinc acetate dihydrate is used as the metal salt hydrate, a suitable insolubilization treatment can be performed by performing the treatment at a heating temperature of 60 ° C. or 65 ° C. for about 8 hours. In addition, when zinc sulfate heptahydrate is used as the metal salt hydrate, a suitable insolubilization treatment can be performed by performing the treatment at a heating temperature of 60 ° C. for about 90 minutes.

  Of course, the degree of insolubilization can be appropriately selected by changing the heating temperature and the heating time. When it is desired to change the degree of insolubilization by changing the amount of dehydration, it can be adjusted by the heating temperature and the heating time. Alternatively, when it is desired to achieve the same state (the same amount of dehydration) as the degree of insolubilization described above, the heating time may be increased to shorten the heating time.

  The insolubilization treatment is preferably performed by appropriately setting the heating temperature in the range of 30 ° C. to 300 ° C. and the heating time in the range of 30 seconds to 30 hours in consideration of the heat resistance and productivity of the substrate.

  In addition, in the CBD process implemented at the following process (C), it has a suitable film-forming temperature (deposition temperature) according to the component of the buffer layer. For example, the film forming temperature of the buffer layer mainly composed of Zn or Cd sulfide is preferably 55 ° C. to 95 ° C. For this reason, in the CBD process, when the substrate is immersed in the CBD reaction liquid that has been temperature-controlled in advance, the insolubilization process is performed as a heat treatment so that the buffer is immersed in the CBD reaction liquid. It is possible to suppress a temperature drop of the reaction solution that is temperature-controlled at the layer formation temperature, and to reduce time loss in the manufacturing process.

<Process (C)>
Next, the insolubilized precursor layer 40P is used as a base layer and immersed in an alkaline reaction liquid L1 (L2) containing a sulfur source to form the buffer layers 40 (41, 42) by the CBD method.

The CBD method uses a general formula [M (L) _i ] ^{m +} ⇔M ^{n +} + iL (where M is a metal element such as Cd, Zn, In, Sn, L is a ligand, m, n, i: positive number By using as a reaction solution a metal ion solution having a concentration and pH that is a supersaturated condition due to an equilibrium as represented by the following formula, a complex of metal ions M is formed at a moderate rate in a stable environment. In this method, a metal compound thin film is deposited on a substrate.

  FIG. 4A schematically shows a state in which the buffer layer 40 ′ and the particulate solid 40C are deposited on the photoelectric conversion semiconductor layer 30 by the CBD method without providing the precursor layer 40P as an underlayer in the reaction tank P. Is. In FIG. 4A, a support 70 is a means for holding a film formation substrate (10, 20, 30) in the CBD method, and a reaction solution L is an alkaline reaction solution containing a metal source and a sulfur source.

  Here, the particulate solid 40C is a particle having a primary particle size on the order of several tens to several hundreds of nanometers, or a particulate solid formed by agglomeration of these primary particles (secondary aggregate or secondary particle). Also called).

  As described in the “Background Art” section, as shown in FIG. 4A, in the formation of the buffer layer 40 ′ by the conventional CBD method, the buffer layer 40 ′ is deposited on the photoelectric conversion semiconductor layer 30. Reaction involving uniform nucleation) and production of particulate solid 40C in reaction liquid L (reaction involving uniform nucleation) proceed simultaneously. Therefore, when a large number of particulate solids 40C are generated in the reaction liquid L, adhesion to the surface of the buffer layer occurs (not shown), leading to a decrease in device performance.

  On the other hand, in the present invention, the precursor layer 40P is provided as an underlayer for the CBD method as described above. In the case of having such an underlayer, the metal element contained in the underlayer is made a metal element constituting the buffer layer, so that the metal element in the underlayer can be converted to CBD as long as there is a sulfur source in the alkaline reaction liquid L1. The desired buffer layer 40 (41) is obtained by sulfidation in the process (FIG. 1A (d)).

  A schematic diagram of the reaction is shown in FIG. 4B. As shown in FIG. 4B, the reaction before the reaction on the left side is the same as that in FIG. 4A except that the alkaline reaction liquid L1 containing no metal source is used. In the precipitation reaction of the buffer layer 40 (41) by the CBD method, the reaction liquid L1 does not contain a metal source. Therefore, the reaction with homogeneous nucleation does not occur in the reaction liquid L1, or hardly proceeds even if it occurs. -Since the sulfidation of the layer 40P becomes dominant, the particulate solid 40C does not precipitate, or even if it precipitates, the buffer layer 40 (41) is deposited almost without being deposited. This sulfidation reaction is a reaction that proceeds with the metal source of the precursor layer 40P as a starting point (seed), so that the deposition rate is higher than the deposition rate by the normal CBD method. Furthermore, since precipitation of the particulate solid 40C is suppressed, an effect of reducing the exchange frequency of the reaction liquid L1 is also obtained. Such an effect also greatly contributes to the productivity of the buffer layer.

In addition, since the metal ions in the precursor layer are sulfided and become part of the buffer layer in the initial reaction of the CBD method, the denseness of the underlayer is increased and the adhesion with the photoelectric conversion layer is improved. Therefore, by using the precursor layer 40P as the underlayer, the buffer layer 41 (40) with good adhesion can be produced with high productivity while suppressing the generation of the particulate solid 40C.
Below, the reaction liquid L1 (L2) used in a process (C) is demonstrated.
As a sulfur source (component (S)), a compound containing sulfur, for example, thiourea (CS (NH ₂ ) ₂ ), thioacetamide (C ₂ H ₅ NS), thiosemicarbazide, thiourethane, diethylamine, Triethanolamine or the like can be used, among which thiourea or a derivative thereof is preferable. The concentration of the component (S) is not particularly limited, but is preferably 0.01 to 1.0 M in the reaction liquid L1.

The alkaline reaction liquid L1 containing no metal source is composed of the above component (S) and aqueous ammonia or ammonium salt (for example, CH ₃ COONH ₄ , NH ₄ Cl, NH ₄ I and (NH ₄ ) ₂ SO ₄ etc.) (component ( N)) and water, or a mixed solution further containing at least one citric acid compound (component (C)) with respect to the mixed solution. Component (N) has a function as a pH adjusting agent that adjusts the pH of the reaction solution so that the decomposition reaction of component (S) proceeds, and a function as a complexing agent that adjusts the solubility and supersaturation degree of metal ions. Bear.

For example, when the pH of the reaction solution before the start of reaction is less than 9.0, the decomposition reaction of the component (S) such as thiourea does not proceed or proceeds very slowly, so that the precipitation reaction does not proceed. The decomposition reaction of thiourea is as follows. The decomposition reaction of thiourea is described in Journal of the Electrochemical Society, 141 (1994) 205-210, Journal of Crystal Growth 299 (2007) 136-141, and the like.
SC (NH ₂ ) ₂ + OH ^{− Ｓ} SH ⁻ + CH ₂ N ₂ + H ₂ O,
SH ⁻ + OH ⁻ ⇔ S ² + + H ₂ O

  On the other hand, when the pH of the reaction solution before the start of the reaction exceeds 12.0, the effect that the component (N) that also functions as a complexing agent or the like makes a stable solution is increased, and the precipitation reaction does not proceed or proceeds. But it will be very slow. The pH of the reaction solution before starting the reaction is preferably 9.5 to 11.5.

  If the concentration of the component (N) in the reaction liquid L1 is 0.001 to 0.40 M, it is usually before the start of the reaction without special pH adjustment such as using a pH adjuster other than the component (N). The pH of the reaction solution is in the range of 9.0 to 12.0.

  Component (C) is a component that functions as a complex-forming agent and the like, and a complex is easily formed by optimizing the type and concentration of component (C).

  By using component (C), which is at least one kind of citric acid compound, a complex is more easily formed than in a reaction solution that does not use a citric acid compound, crystal growth by the CBD reaction is well controlled, and the base is covered well. Thus, a stable film can be formed.

  It does not restrict | limit especially as a component (C), It is preferable to contain sodium citrate and / or its hydrate. When the concentration range of the component (N) is 0.001 to 0.40M, the concentration of the component (C) is preferably 0.001 to 0.25M. By setting this concentration range, it is possible to stably form a film in which the complex is favorably formed and the base is satisfactorily covered. When the concentration of component (C) exceeds 0.25M, a stable aqueous solution in which the complex is well formed is obtained, but on the other hand, the progress of the precipitation reaction on the substrate is slow or the reaction does not proceed at all. There is. The concentration of component (C) is preferably 0.001 to 0.1M.

  Although reaction temperature will not be restrict | limited especially if the decomposition reaction of the said component (S) advances, It is preferable that the substrate temperature and / or the temperature of the reaction liquid L1 are 55 to 95 degreeC. If the reaction temperature is less than 55 ° C., the reaction rate becomes slow, and the thin film does not grow, or even if the thin film is grown, it becomes difficult to obtain a desired thickness (for example, 50 nm or more) at a practical reaction rate. When the reaction temperature exceeds 95 ° C., generation of bubbles and the like increases in the reaction solution, which adheres to the film surface and makes it difficult to grow a flat and uniform film. Furthermore, when the reaction is carried out in an open system, a concentration change due to evaporation of the solvent or the like occurs, making it difficult to maintain stable thin film deposition conditions.

  The reaction time is not particularly limited, but a shorter reaction time is preferable from the viewpoint of productivity. Although depending on the reaction temperature, the reaction time is, for example, 1 to 20 minutes, and the base can be satisfactorily covered, and a layer having a sufficient thickness as a buffer layer can be formed.

  If Cd or Zn is used as the metal source contained in the precursor layers 40R and 40P (underlayer), the buffer mainly contains CdS, ZnS, Zn (S, O), Zn (S, O, OH), or the like. Layer 41 (40) may be formed.

  Moreover, although the reaction liquid L1 which does not contain a metal source was demonstrated above, the aspect using the alkaline reaction liquid L2 containing a sulfur source and a metal source may be sufficient. In this case, since the reaction proceeds at the beginning of the reaction with the metal source of the precursor layer 40P as the starting point of the reaction, the precipitation of the buffer layer 41 due to the sulfidation of the precursor layer 40P is a reaction accompanied by uniform nucleation (particulate solids 40C)) (FIG. 1B (d)).

  FIG. 4C shows a schematic diagram of the reaction when the reaction liquid L2 contains a sulfur source and a metal source. As shown in the figure, compared to the embodiment shown in FIG. 4B, the generation of the particulate solid 40C containing the metal source in the reaction liquid L2 proceeds, but the buffer layer 41 is oxidized by sulfidation of the precursor layer 40P at the beginning of the reaction. Then, the buffer layer 42 is deposited by the reaction accompanying the heterogeneous nucleation in the reaction liquid L2 or the reaction in which the buffer layer 41 is grown as a seed.

  Depending on the reaction conditions, the reaction in which the buffer layer 42 precipitates in the reaction liquid L2 may occur when the reaction proceeds using the buffer layer 41 as a seed layer, or when the buffer layer 41 does not function as a seed layer, but on the seed layer. Nuclei may be generated and the film deposition reaction may proceed. When the buffer layer 41 functions as a seed layer, the reaction is promoted by the presence of the seed layer, so that the film formation rate is faster than the normal CBD film formation of FIG. 2A, and the particulate solid 40C is precipitated. Is also suppressed.

  On the other hand, even when the buffer layer 41 does not function as a seed layer, since the buffer layer 41 is already obtained by sulfidation, the film thickness that must be formed by film deposition is reduced. Further, when there is a seed layer, nucleation is likely to occur on the seed. Therefore, even in such an embodiment, although the effect is reduced as compared with the case of functioning as a seed layer, the effect of improving the film formation rate and suppressing the precipitation of the particulate solid 40C can be obtained.

  As shown in FIGS. 1B (d) and 1 (e), the buffer layer 40 obtained in this manner is seeded with the buffer layer 41 due to sulfidation of the precursor layer 40P and the reaction accompanying the heterogeneous nucleation or the buffer layer 41. It becomes a layered film with the buffer layer 42 due to the reaction that grows as a (seed) (including a mode in which the layer boundary disappears and has a composition gradient), regardless of the presence or absence of the function as a seed layer Since the buffer layer 41 obtained by sulfuration of the precursor layer 40P is formed, the above-described adhesion effect can be obtained.

  As reaction liquid L2 containing a metal source, what added the metal source to the mixed solution containing the said sulfur source should just be used. Examples of the metal source include Cd sources such as cadmium sulfate, cadmium acetate, cadmium nitrate, cadmium chloride, and hydrates thereof, zinc sulfate, zinc acetate, zinc nitrate, zinc chloride, zinc carbonate, and hydrates thereof. For example, a Zn source.

  The metal source contained in the reaction liquid L2 preferably contains at least one metal element identical to the metal element contained in the metal salt hydrate contained in the metal salt hydrate in the previous step (A). The concentration of the metal source is not particularly limited, and is preferably 0.001 to 0.1M. In addition, about the preferable aspect and density | concentration of substances other than the metal source in the reaction liquid L2, it is the same as that of the reaction liquid L1.

  In the manufacturing method of the buffer layer 40 (41, 42) of the present invention, adhesion of the particulate solid 40C to the surface of the buffer layer can be satisfactorily suppressed, but a small amount of particulate solid 40C can adhere. There is also sex. The adhesion of the particulate solid 40C causes deterioration in device characteristics as described above. Therefore, when a small amount of particulate solid 40C is adhered, it is preferable to remove it. However, since the adhesion of the particulate solid 40C is greatly suppressed as compared with the conventional method, this step may be omitted.

  When washing is performed, it is preferable to use pure water, ion exchange water, industrial water, or a solution obtained by adding an additive having an effect of removing particles (colloid) to water. The temperature of the cleaning liquid is preferably 20 ° C to 40 ° C. The cleaning method may be performed by immersing in a water tank or shower cleaning. After cleaning, the cleaning liquid is preferably removed by spraying dry air or nitrogen on the front and back surfaces of the substrate.

  When the buffer layer is made of ZnS, Zn (S, O), Zn (S, O, OH), after the post CBD cleaning liquid removing step, the temperature is 150 ° C. to 250 ° C., preferably 170 ° C. It is preferable to provide a heat treatment step (annealing step) in which heating is performed at a temperature of 230 ° C. for 5 to 60 minutes. The heating atmosphere is not particularly limited in air or vacuum. The heating means is not particularly limited, but heating using a commercially available oven, electric furnace, vacuum oven or the like is preferable.

<Formation of photoelectric conversion element>
After forming the buffer layer 40, the translucent conductive layer 50 is provided. The translucent conductive layer 50 is a layer that captures light and functions as an electrode that pairs with the lower electrode 20 and through which charges generated in the photoelectric conversion semiconductor layer 30 flow. The composition of the translucent conductive layer 50 is not particularly limited, and n-ZnO such as ZnO: Al, ZnO: Ga, and ZnO: B is preferable. The film thickness of the translucent conductive layer 50 is not particularly limited, and is preferably 50 nm to 2 μm.

  The film forming method of the translucent conductive layer 50 is not particularly limited, but the sputtering method and the MOCVD method are suitable as with the window layer. On the other hand, in order to simplify the manufacturing process, it is also preferable to use a liquid phase method.

  After forming the translucent conductive layer 50, the upper electrode 60 is provided on the translucent conductive layer 50. The main component of the upper electrode 60 is not particularly limited, and examples thereof include Al. The film thickness of the upper electrode 60 is not particularly limited and is preferably 0.1 to 3 μm.

  Moreover, you may provide a window layer (protective layer) (not shown) as needed. The window layer is an intermediate layer that captures light. The window layer is not particularly limited as long as it has translucency for taking in light, but i-ZnO or the like is preferable as the composition considering the band gap. The film thickness of the window layer is not particularly limited, preferably 10 nm to 2 μm, and more preferably 15 to 200 nm. The method for forming the window layer 50 is not particularly limited, but a sputtering method or an MOCVD method is suitable. On the other hand, since the buffer layer 40 is manufactured by the liquid phase method, it is also preferable to use the liquid phase method in order to simplify the manufacturing process.

  In an integrated solar cell in which a large number of photoelectric conversion elements (cells) are integrated, the upper electrode is provided in a cell serving as a power extraction end among cells connected in series.

  In addition, the manufacturing process of the above-described photoelectric conversion element can, of course, include processes other than the processes described above. For example, a patterning process for integration such as a scribing process of the lower electrode, a scribing process after forming the photoelectric conversion layer, a scribing process after forming the buffer layer and the transparent conductive layer, and one module when using a long substrate An integrated photoelectric conversion device (integrated solar cell) can be manufactured by adding a cutting process step or the like. Moreover, you may attach a cover glass, a protective film, etc. as needed.

  As described above, in the present invention, in the production of the buffer layer 40 (41, 42), the step of forming the precursor layer 40R containing the metal salt hydrate before the buffer layer forming step by the CBD method, A step of insolubilizing the precursor layer 40R is included. According to this method, since the metal ions in the insolubilized precursor layer 40P function as a good reaction starting point in the CBD process, in the CBD method, the particulate solid 40C is generated in the reaction liquid L1 (L2). Compared to the formation, film deposition is dominant compared to the formation (mainly in the case of the reaction liquid L2). At the same time, the controllability of the buffer layer composition is also increased (mainly in the case of the reaction liquid L1). Further, by using the insolubilized precursor layer 40P as the underlayer, the metal ions in the precursor layer 40P are sulfided and become a part of the buffer layer 40 in the initial reaction of the CBD method. As a result, the buffer layer is deposited in a form that enhances the property, and the adhesiveness with the photoelectric conversion semiconductor layer 30 is improved. Therefore, according to the present invention, in the formation of the buffer layer 40 (41, 42) by the CBD method, the buffer layer 40 (41, 42) having good adhesion is suppressed from generating the particulate solid 40C, It can be manufactured with high productivity.

  The present invention is not limited to the above-described embodiment, and the design can be changed as appropriate without departing from the spirit of the present invention.

Examples and comparative examples according to the present invention will be described.
Eight buffer layers were formed by combining the following substrate and each step (Examples 1 to 4 and Comparative Examples 1 to 4). The types of substrates and presence / absence of a precursor layer, conditions and presence / absence of insolubilization treatment, and CBD conditions are shown in Table 1, respectively. In the comparative example, it was the same as in Examples 1 and 2 except for the conditions of the precursor layer. Moreover, the photoelectric conversion element was produced on the conditions of Examples 1-4 and Comparative Examples 1-4, and each evaluated. The evaluation results are shown in Table 1.

(substrate)
The following two types of substrates were prepared as substrates.
Substrate 1 (Cu (In _0.7 Ga _0.3 ) Se ₂ / Mo / SLG substrate):
The substrate 1 is a substrate in which a CIGS layer is formed on a soda lime glass (SLG) substrate with an Mo electrode layer. A Mo lower electrode having a thickness of 0.8 μm was formed on a 30 mm × 30 mm soda lime glass (SLG) substrate by sputtering. A Cu (In _0.7 Ga _0.3 ) Se ₂ layer having a thickness of 1.8 μm was formed on this substrate by using a three-step method.

Substrate 2 (Cu (In _0.7 Ga _0.3 ) Se ₂ / Mo / SLG / AAO / Al / SUS substrate):
The substrate 2 is an anodized substrate (30 mm × 30 mm square) in which an aluminum anodized film (AAO) is formed on an Al surface on a stainless steel (SUS) -Al composite base material, and a soda lime glass (SLG) on the AAO surface. ) Layer, a Mo electrode layer, and a CIGS layer. The SLG layer and the Mo lower electrode were formed by sputtering, and the Cu (In _0.7 Ga _0.3 ) Se ₂ layer was formed by a three-step method. The film thickness of each layer was SUS (over 100 μm), Al (30 μm), AAO (20 μm), SLG (0.2 μm), Mo (0.8 μm), CIGS (1.8 μm).

(Surface treatment process)
For the surface treatment of the CIGS layer, a 10% aqueous solution of potassium cyanide (KCN) was used as the surface treatment solution. A reaction vessel containing a surface treatment solution was prepared, and the surface of the CIGS layer was immersed in a KCN aqueous solution at room temperature for 3 minutes to remove impurities from the CIGS layer surface. After the surface treatment step, sufficient washing with pure water was performed.

(Formation of precursor layer on CIGS layer)
Zinc acetate dihydrate was dissolved in absolute ethanol to prepare a 0.01M coating solution. This was coated on the substrate 1 and the substrate 2 after the KCN treatment at 1000 rpm using a spin coater and naturally dried.

(Precursor layer insolubilization treatment)
The precursor layer was insolubilized on the substrate formed up to the precursor layer as described above. The insolubilization treatment was a heat treatment at 60 ° C. for 8 hours in an oven.

(CBD process)
<Preparation of CBD reaction solution>
Reaction solution 1:
Zinc sulfate aqueous solution (0.18 [M]) as aqueous solution (I) of component (Z), thiourea aqueous solution (thiourea 0.30 [M]) as aqueous solution (II) of component (S), component (C) Aqueous solution of trisodium citrate (0.18 [M]) was prepared as an aqueous solution (III), and aqueous ammonia (0.30 [M]) was prepared as an aqueous solution (IV) of component (N). Next, among these aqueous solutions, I, II, and III are mixed in the same volume, zinc sulfate 0.06 [M], thiourea 0.10 [M], trisodium citrate 0.06 [M]. A mixed solution was completed, and this mixed solution and 0.30 [M] aqueous ammonia were mixed by the same volume to obtain a CBD solution. When mixing the aqueous solutions (I) to (IV), the aqueous solution (IV) was added last. In order to obtain a transparent reaction solution, it is important to add the aqueous solution (IV) last. The CBD solution was filtered using a filtration filter having a pore size of 0.22 μm. The pH of the obtained CBD solution was 10.3.

Reaction liquid 2:
A solution (reaction solution 2) obtained by removing the Zn component from the reaction solution 1 was prepared. In the reaction solution 1 preparation step, reaction solution 2 was prepared in the same procedure as the preparation of reaction solution 1, except that water was used instead of aqueous solution I.

<Precipitation of buffer>
The substrate on which the photoelectric conversion layer (CIGS layer) was formed was immersed in the reaction vessel containing the reaction solution 1 or 2 adjusted to 90 ° C. for the time shown in Table 1 to deposit a Zn-based buffer layer. After taking out, the surface was thoroughly cleaned with pure water, and then the cleaning liquid was removed by spraying with dry air.

<Annealing treatment>
Subsequently, an annealing process was performed in air at 200 ° C. for 60 minutes.

(Buffer layer evaluation)
The buffer layer was evaluated by evaluating the film thickness, the deposition rate, and the degree of particle adhesion.
Regarding the degree of adhesion of the particles, in the field of view of 100 μm × 100 μm, the adhering material (aggregates found when the surface of the film is observed from directly above) in which the particles having the primary particle size of the order of several tens to several hundreds of nm are aggregated. The presence state was evaluated according to the following criteria.
Good when there is no equivalent circle diameter of 3 μm or more (○), 1 or more when the equivalent circle diameter is 3 μm or more is acceptable (△), and the equivalent circle diameter is 3 μm or more The case of 6 or more was regarded as defective (x).

  For the evaluation of the film thickness, a protective film was formed on the surface of the buffer layer, and then a focused ion beam (FIB) process was performed to obtain a cross section of the buffer layer, and SEM observation was performed on the cross section. The film thickness was measured for a total of 35 locations from this cross-sectional SEM image, and the average value is shown in Table 1 as the film thickness. Table 1 shows the evaluation of the coverage of the buffer layer as the presence or absence of thin film formation after CBD. In Table 1, the case where a thin film having a completely covered base was obtained was shown as ◯, and the case where there was no precipitate or even the base was not completely covered was shown as x.

  The deposition rate of the buffer layer was calculated from the film formation time and the film thickness value. The results are also shown in Table 1.

  As shown in Table 1, in Examples 1 to 4, a buffer layer with good coverage was formed with high productivity. Table 1 also shows that the deposition rate of the buffer layer was about 5 in Example 1 compared to both Comparative Example 1 in which the precursor layer was not formed and Comparative Example 3 in which the precursor layer was not insolubilized. It is shown that. Further, in Examples 1 to 4 where the deposition rate is high, the deposition of particles (colloid) particles in the reaction solution in the buffer layer deposition process is very small, and adhesion of particulate solids to the buffer layer surface is also observed. There wasn't. On the other hand, in Comparative Examples 1 to 4, precipitation of particles (colloid) progressed as precipitation progressed, and adhesion of particles to the buffer layer surface was also confirmed.

  From the above, the high effect on productivity by the insolubilized precursor layer and the importance of the insolubilizing treatment of the precursor layer were confirmed.

(Preparation of photoelectric conversion element)
On the buffer layers of Examples 1 to 4 and Comparative Examples 1 to 4, an Al-doped conductive zinc oxide thin film having a thickness of 500 nm was formed by sputtering, and then an Al electrode was deposited as an upper electrode (extraction electrode) Thus, a single-cell photoelectric conversion element (solar cell) was produced.

As described above, by providing a step of forming a precursor layer containing a metal salt hydrate and a step of insolubilizing this precursor layer before the film formation step of the buffer layer by the CBD method, good adhesion is provided. It was confirmed that the buffer layer can be produced with good productivity while suppressing the generation of particulate solids.

1, 1 'photoelectric conversion element 10 substrate 20 lower electrode 30 photoelectric conversion semiconductor layer 40, 41, 42 buffer layer 40R precursor layer 40P insolubilized precursor layer 40C particulate solid (colloidal solid)
50 Translucent conductive layer 60 Upper electrode L, L1, L2 Reaction liquid P Reaction tank

Claims (8)

In the method of manufacturing the buffer layer in the photoelectric conversion element in which a lower electrode layer, a photoelectric conversion semiconductor layer containing a compound semiconductor as a main component, a buffer layer, and a light-transmitting conductive layer are sequentially stacked on a substrate,
(A) applying and forming a precursor layer containing a metal salt hydrate on the photoelectric conversion semiconductor layer;
A step (B) of insolubilizing the precursor layer;
A step (C) of immersing at least the precursor layer side surface of the insolubilized substrate in an alkaline reaction solution containing a sulfur source to form the buffer layer by a chemical bath deposition method. A method for manufacturing a buffer layer.   The method for producing a buffer layer according to claim 1, wherein the reaction solution contains at least one metal element identical to the metal element contained in the metal salt hydrate.   The method for manufacturing a buffer layer according to claim 1, wherein the insolubilization treatment is a heat treatment.   The method for producing a buffer layer according to any one of claims 1 to 3, wherein the metal salt hydrate is zinc acetate dihydrate and / or zinc sulfate heptahydrate.   The method for manufacturing a buffer layer according to any one of claims 1 to 4, wherein the sulfur source is thiourea or a derivative thereof.   The method for producing a buffer layer according to any one of claims 1 to 5, wherein in the step (C), the substrate temperature and / or the temperature of the reaction solution is set to 55 ° C to 95 ° C.   The process for producing a buffer layer according to any one of claims 1 to 6, further comprising a step (D) of heating the buffer layer at a temperature of 150C to 250C after the step (C). Method. In the method of manufacturing a photoelectric conversion element in which a lower electrode layer, a photoelectric conversion semiconductor layer containing a compound semiconductor as a main component, a buffer layer, and a light-transmitting conductive layer are sequentially stacked on a substrate,
The said buffer layer is manufactured with the manufacturing method of the buffer layer in any one of Claims 1-7, The manufacturing method of the photoelectric conversion element characterized by the above-mentioned.