JP2013012516A - Light-emitting device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device which has small variations in color tone, and a method for manufacturing the same.SOLUTION: The method for manufacturing the light-emitting device comprises the steps of: forming, on a light-emitting element 12, a wavelength conversion layer 13 which absorbs light from the light-emitting element 12 to convert the light into light having a different wavelength; forming, on the wavelength conversion layer 13, a protruding portion 14 surrounding part or all of an upper surface of the wavelength conversion layer 13; and forming, inside the protruding portion 14, a wavelength conversion portion 15 which absorbs light from the light-emitting element 12 to convert the light into light having a different wavelength.

Description

  The present invention relates to a light emitting device that is optimal for a light source of a display or a lighting device, and more particularly to a light emitting device having a light emitting element and a wavelength conversion layer, and a method for manufacturing the same.

  As a wavelength conversion method of a light emitting device using a light emitting element such as a light emitting diode (LED), there is a method of arranging a wavelength conversion substance around the light emitting element. Patent Document 1 discloses a light-emitting device in which a wavelength conversion substance is arranged on the surface of a light-emitting element flip-chip mounted on a support by an electrophoretic deposition method.

JP 2003-69086 A

  In Patent Document 1, the light emission intensity distribution of the light emitting element is not uniform, and the light emission intensity distribution in the light emitting device is not uniform. This is because in the light emitting element, a light emission intensity distribution is formed in the light emitting surface in accordance with the current supplied from the pad electrode. Therefore, the light emission intensity tends to be higher in the central portion in the light emitting surface than in the terminal portion. In addition, in the electrophoretic deposition method, the amount of the wavelength converting substance to be arranged varies in the light emitting device, so that color variation occurs in the light emitting device.

  Accordingly, an object of the present invention is to provide a light emitting device with little color variation and a manufacturing method thereof.

  The manufacturing method of the light emitting device according to the present invention includes a step of forming a wavelength conversion layer that absorbs light from the light emitting element and converts it into light of a different wavelength on the light emitting element, and on the wavelength conversion layer. A step of forming a convex portion surrounding part or all of the upper surface of the wavelength conversion layer, and a wavelength conversion that absorbs light from the light emitting element and converts it into light of a different wavelength inside the convex portion. Forming a site.

The step of forming the convex portion preferably forms the convex portion so as to surround the central portion of the upper surface of the wavelength conversion layer.
In the step of forming the convex portion, the convex portion is preferably formed by applying a translucent material on the wavelength conversion layer and then curing it.
The translucent material is preferably made of at least one selected from the group consisting of a silicone resin, an epoxy resin, and glass.

  A light-emitting device according to the present invention includes: a light-emitting element; and a wavelength conversion layer that is formed on the light-emitting element and absorbs light from the light-emitting element and converts the light into different wavelengths. A light-transmitting material is included on the upper surface of the light-emitting element, and has a convex portion surrounding part or all of the upper surface of the light-emitting element, and the light from the light-emitting element is absorbed inside the convex portion. Wavelength conversion sites that convert light of different wavelengths are formed.

It is preferable that the convex portion is formed so as to surround a central portion of the upper surface of the light emitting element.
It is preferable that the wavelength conversion layer and the convex portion are integrally formed.
The surface of the wavelength conversion part preferably has a curved surface protruding upward.

  According to the present invention, it is possible to provide a light emitting device with little color variation and a manufacturing method thereof.

It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the light-emitting device concerning 1st Embodiment of this invention. It is a schematic sectional drawing explaining an example of the manufacturing process of the light-emitting device which concerns on 1st Embodiment of this invention. It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on 2nd Embodiment of this invention.

  A light-emitting device and a method for manufacturing the light-emitting device for carrying out the present invention will be described with reference to the drawings.

<First Embodiment>
FIG. 1A is a schematic cross-sectional view showing an example of a light emitting device 10 according to the first embodiment of the present invention. FIG. 1B is an enlarged schematic cross-sectional view of a part of the light emitting device 10 according to the first embodiment of the present invention. FIG. 2 is a schematic plan view showing an example of the light emitting device 10 according to the first embodiment of the present invention.
The light emitting device 10 according to the present embodiment includes a wavelength conversion layer 13 containing a wavelength conversion substance on a light emitting element 12 mounted on a substrate 11. On the upper surface of the wavelength conversion layer 13, a convex portion 14 surrounding a part or the entire surface of the light emitting element 12 is formed. A wavelength conversion part 15 is formed inside the convex part 14.
Hereinafter, each component of the light emitting device 10 according to the present embodiment will be described in detail.

(Substrate 11)
The base is for placing electronic components such as light emitting elements. The shape of the substrate is not particularly limited, but the upper surface is preferably flat. An insulating substrate can be used. For example, ceramics such as alumina and aluminum nitride are preferably used. However, the substrate is not limited to this, and a glass epoxy resin or a thermoplastic resin can be used instead.

  The base is provided with a conductive portion (not shown) on at least the surface facing the electrode of the light emitting element. The conductive portion is for electrically connecting a light emitting element disposed on the base and an external power source and applying a voltage from the external power source to the light emitting element.

  The conductive portion may be any material having conductivity, but is preferably composed of a physically and chemically stable material. As the conductive part, for example, Au (gold), Ag (silver), Cu (copper), or the like can be used.

(Light emitting element 12)
The light emitting element is not particularly limited, but a light emitting diode is preferably used. The top surface shape of the light emitting element is a quadrangle in FIG. 2, but is not limited thereto, and may be a circle, an ellipse, a polygon, or a shape close to this.

  As the structure of the light emitting element, for example, on a substrate, various semiconductors such as nitride semiconductors such as InN, AlN, GaN, InGaN, AlGaN, InGaAlN, III-V group compound semiconductors, II-VI group compound semiconductors, A laminate structure including a light emitting layer is formed, and an electrode is formed thereon. Examples of the substrate of the light emitting element include an insulating substrate such as sapphire, a conductive substrate such as SiC, GaN, and GaAs. A light emitting element having an arbitrary wavelength can be selected.

  The light emitting element 12 is flip-chip mounted on the conductive portion of the base 11. That is, the electrode of the light emitting element 12 is mounted on the conductive portion of the base 11 via the bonding member 16, and the substrate side facing the surface on which the electrode is formed is disposed as the light extraction surface. Thereby, it can be set as the structure which does not connect a wire to a light emitting element, and a wavelength conversion layer and a convex part can be formed suitably on a light emitting element.

(Jointing member 16)
A joining member is a member for joining a light emitting element on the electroconductive part formed in the base | substrate. The joining member is disposed so as to be interposed at least between the electrode of the light emitting element and the conductive portion. As the bonding member, a material capable of conducting the light emitting element and the conductive portion is used. For example, a solder material such as Sn—Cu, Sn—Ag—Cu, or Au—Sn, a metal bump such as Au, an anisotropic conductive paste, or the like can be used.

(Wavelength conversion layer 13)
The wavelength conversion layer 13 is formed on the light emitting element 12. The wavelength conversion layer 13 includes a wavelength conversion material 13a (hereinafter also referred to as “first wavelength conversion material”), and has a function of converting light from the light emitting element into light of a different wavelength. As the first wavelength conversion material 13a included in the wavelength conversion layer 13, for example, a phosphor can be used. In the present embodiment, the wavelength conversion layer 13 preferably covers the upper surface and side surfaces of the light emitting element 12. Thereby, the light radiate | emitted from the light emitting element 12 to an upper direction and a horizontal direction can be converted into a different wavelength.

  The wavelength conversion layer is preferably formed with a substantially uniform thickness. The thickness of the wavelength conversion layer is preferably about 0.05 to 100 μm, more preferably about 5 to 50 μm.

  The shape of the first wavelength converting substance is preferably, for example, a spherical shape or a similar shape, preferably having an average particle size of 0.01 μm to 100 μm, more preferably 1 to 30 μm.

(Convex part 14)
A convex portion 14 is provided on the upper surface of the wavelength conversion layer 13. The convex portion 14 surrounds part or all of the upper surface of the light emitting element 12 and functions as a dam that dams the wavelength conversion portion 15. Thereby, the wavelength conversion site | part 15 can be arrange | positioned in the specific location on the light emitting element 12. FIG. In addition, the convex portion 14 can have a function of diffusing light by including a wavelength conversion substance 14a (hereinafter also referred to as “second wavelength conversion substance”) or a base material to be described later.

  The convex portion 14 is preferably formed so as to surround the central portion of the upper surface of the light emitting element 12. Thereby, since the wavelength conversion part 15 can be arrange | positioned on the center part of the light emitting element with comparatively high light emission intensity, the color tone dispersion | variation of a light-emitting device can be reduced.

  Examples of the planar shape of the convex portion include a circle, an ellipse, a shape similar to the upper surface of the light emitting element, and the like. Moreover, you may lack a part in these shapes. The convex part may be formed integrally with the wavelength conversion layer.

  The size of the convex portion is preferably changed as appropriate depending on the size of the light emitting element. The height of the convex portion is preferably 1 μm to 300 μm, more preferably 10 μm to 100 μm.

  The convex portion is made of a translucent material including the second wavelength conversion substance or a base material to be described later. As the translucent material, silicone resin (thermosetting silicone resin), epoxy resin, glass, or the like can be used. In particular, thermosetting liquid silicone is preferable. The translucent material is disposed between the particles of the second wavelength converting substance or the substrate, and is preferably disposed so as to fill the gaps between the particles. Thereby, the wavelength conversion part can be stably arranged inside the convex part.

  As shown in FIG. 1, in the light emitting device of this embodiment, a second wavelength conversion substance or substrate is disposed on the upper surface of the wavelength conversion layer inside the convex portion, and a light-transmitting property between these particles. Material is arranged. Thereby, a wavelength conversion part can be stably arranged on a wavelength conversion layer.

  For example, a phosphor can be used as the second wavelength converting substance contained in the convex portion. The convex part may contain a substrate instead of the second wavelength converting substance. As the substrate, a material that hardly absorbs light from the light emitting element is preferable. For example, fine particles such as thermosetting silicone, epoxy, glass (borosilicate glass, soda lime glass, low alkali glass), metal, inorganic compound, and the like can be used. In particular, highly transparent glass and highly reflective oxide (alumina, titania, silica) are preferable. Moreover, you may contain both a wavelength conversion substance and a base material in a convex part.

  The shape of the second wavelength converting substance and the substrate contained in the convex part is preferably, for example, a sphere or a similar shape, preferably having an average particle size of 0.01 μm to 100 μm, and having a size of 1 μm to 30 μm. Is more preferable. As the second wavelength conversion substance and the base material, it is preferable to use a material having a specific gravity greater than that of the light-transmitting material. As a result, the second wavelength conversion substance and the base material can be disposed so as to be close to the wavelength conversion layer so that light leaks laterally from the convex portion, or the second wavelength conversion substance and Attenuation of light due to repeated reflection between the particles of the substrate can be reduced. Further, it is preferable that the second wavelength conversion substance and the base material have a larger particle size than the first wavelength conversion substance.

(Wavelength conversion part 15)
The wavelength conversion part 15 is formed inside the convex part 14. The wavelength conversion part 15 includes a light-transmitting material 15b and a wavelength conversion substance 15a (hereinafter also referred to as “third wavelength conversion substance”). The wavelength conversion part 15 has a function of converting the wavelength of the excitation light passing through the wavelength conversion layer 13.

  It is preferable that the wavelength conversion part is disposed at the center of the upper surface of the wavelength conversion layer. Thereby, since the wavelength conversion site | part is arrange | positioned on the center part of the light emitting element with comparatively high light emission intensity, the color tone dispersion | variation of a light-emitting device can be reduced.

  Although the shape of the wavelength conversion part is not particularly limited, it is preferable that the surface has a curved surface shape protruding upward in the light emitting device. For example, a substantially hemispherical shape, a substantially hemispherical sphere shape, or the like protruding from the center of the light emitting element can be given. The height of the wavelength conversion site on the center of the light emitting element is preferably 1 μm to 300 μm, more preferably 50 μm to 200 μm.

  The shape of the third wavelength conversion substance contained in the wavelength conversion site is preferably, for example, a sphere or a similar shape, preferably having an average particle size of 0.01 μm to 100 μm, more preferably 1 μm to 30 μm. .

(Wavelength conversion substance)
The wavelength converting substance has a function of converting light emitted from the light emitting element to emit light having different wavelengths. A desired luminescent color can be obtained by adjusting the material and the amount of the wavelength converting substance. A plurality of types of wavelength converting substances may be used.

  As the wavelength conversion substance, for example, a nitride-based phosphor or an oxynitride-based phosphor mainly activated by a lanthanoid element such as Eu or Ce can be used. More specifically, it is mainly activated by Eu-activated α or β sialon-type phosphors, various alkaline earth metal nitride silicate phosphors, lanthanoid elements such as Eu, and transition metal elements such as Mn. Alkaline earth metal halogen apatite phosphor, alkaline earth halosilicate phosphor, alkaline earth metal silicate phosphor, alkaline earth metal halogen borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth metal Rare earth aluminates, rare earth silicates mainly activated by lanthanoid elements such as silicate, alkaline earth metal sulfide, alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, Ce Must be at least one selected from organic and organic complexes mainly activated by lanthanoid elements such as Eu Is preferred.

  The first wavelength conversion substance, the second wavelength conversion substance, and the third wavelength conversion substance described above may be the same type or different types.

(Coating layer 17)
A coating layer that covers the light emitting element, the wavelength conversion layer, the convex portion, and the wavelength conversion portion may be provided on the substrate. The coating layer can have a role of protecting the light emitting element, the wavelength conversion layer, the convex portion, and the wavelength conversion portion and the role of a lens.

  The covering layer is preferably light-transmitting with respect to light from the light-emitting element and having light resistance and insulation. Specifically, silicone resin composition, modified silicone resin composition, epoxy resin composition, modified epoxy resin composition, acrylic resin composition, etc., silicone resin, epoxy resin, urea resin, fluororesin, and at least these resins An organic substance such as a hybrid resin containing one or more kinds can be given.

  The shape of the coating layer can be variously selected according to the light distribution characteristics and the like. For example, the directivity can be adjusted by making the upper surface into a convex lens shape, a concave lens shape, a Fresnel lens shape, or the like.

(Method for manufacturing light emitting device)
Next, a method for manufacturing the light emitting device 10 according to the present embodiment will be described. FIG. 3 is a schematic cross-sectional view illustrating an example of a manufacturing process of the light emitting device 10 according to the present embodiment.

  The light emitting element 12 is connected to the conductive portion (not shown) provided on the base 11 via the bonding member 16. As shown in FIG. 3A, the light emitting element 12 is connected to the conductive portion through the bonding member 16 so that the electrodes of the light emitting element face each other. The method of connecting the conductive portion of the substrate 11 and the light emitting element 12 can be appropriately selected according to the bonding member 16. For example, the connection can be made using ultrasonic waves, heat, load, light, flux, or the like. it can.

  Next, as shown in FIG. 3B, the wavelength conversion layer 13 is formed on the light emitting element 12 on the substrate 11. The wavelength conversion layer 13 is preferably formed so as to cover the upper surface and side surfaces of the light emitting element 12. As a method for forming the wavelength conversion layer 13, an electrodeposition method is preferably used. Thereby, the wavelength conversion layer 13 of uniform thickness can be formed.

  The wavelength conversion layer 13 is formed by, for example, arranging a substrate on which a light emitting element is placed in a solution containing a first wavelength conversion substance such as a phosphor (a bath solution for electrodeposition) and performing electrophoresis in the solution. It is formed by depositing the conversion substance on the surface of the light emitting element. In the case where the surface of the light emitting element is made of a conductive material, a charged wavelength conversion substance can be electrophoresed and deposited on the light emitting element by applying a voltage to the light emitting element itself. In addition, in the case where the surface of the light emitting element has a non-conductive part, such as a light emitting element in which a semiconductor is stacked on an insulating substrate such as sapphire, a conductive film is formed on the non-conductive part of the light emitting element. Then, by applying a voltage to the film, the charged wavelength conversion substance can be electrophoresed and deposited on the insulating substrate through the film. Note that the thickness of the wavelength conversion layer can be appropriately adjusted depending on the deposition conditions and time of the wavelength conversion material.

  Next, a convex portion 14 that surrounds part or all of the upper surface of the wavelength conversion layer 13 by applying a translucent material 14b including a second wavelength conversion substance or a base material 14a on the wavelength conversion layer 13. Form. In this case, the potting method, the ink jet method, the spraying method, or the printing method can be used for the application.

  In the case of using the potting method, as shown in FIG. 3C, a light transmitting material containing a second wavelength converting substance or base material 14a at the center of the upper surface of the wavelength converting layer 13 formed on the light emitting element 12. The material 14b is dropped. The translucent material 14b penetrates between the particles of the wavelength conversion substance 13a of the wavelength conversion layer 13, and permeates toward the outer periphery of the light emitting element 12 by capillary action. At the same time, the second wavelength conversion substance or base material 14 a included in the convex portion 14 is deposited so as to surround the central portion of the upper surface of the wavelength conversion layer 13. FIG. 3D shows a state in which the convex portion 14 is formed.

  Here, the second wavelength conversion substance or the base material 14a in the convex portion is preferably contained in the range of 1% by weight to 50% by weight of the total amount of the translucent material 14b, and 5% by weight to 30% by weight. It is more preferable to make it contain in the range of%. The translucent material 14b preferably has a viscosity of 100 Pa · s or less at 10 ° C. to 150 ° C. (temperature at which the resin is molded), and particularly preferably has a viscosity of about 1 Pa · s at 10 to 30 ° C. preferable. Thereby, generation | occurrence | production of the formation defect of the convex part by hardening acceleration | stimulation of a translucent material or a viscosity change can be suppressed. The coating amount of the light transmissive material is preferably adjusted as appropriate depending on the characteristics of the light transmissive material, the second wavelength conversion substance, the base material, and the like, and the size of the light emitting element.

  It is preferable to heat and cure after applying the translucent material 14b including the second wavelength converting substance or the base material 14a as described above. Thereby, the outflow of the wavelength conversion site | part mentioned later can be suppressed.

  Next, the wavelength conversion part 15 including the translucent material 15 b and the third wavelength conversion substance 15 a is formed inside the convex part 14. The wavelength conversion part 15 is formed by applying a light transmissive material 15b containing a third wavelength conversion substance 15a and then curing.

  The third wavelength converting substance 15a is preferably contained in the range of 1% by weight to 50% by weight, and more preferably in the range of 1% by weight to 10% by weight of the total amount of the light transmissive material 15b. The translucent material 15b preferably has a viscosity of 1 to 100 Pa · s at 10 to 30 ° C., particularly preferably about 5 to 50 Pa · s. Thereby, generation | occurrence | production of the formation defect of the wavelength conversion site | part by the acceleration | stimulation of hardening of a translucent material or a viscosity change can be suppressed. The amount of the translucent material applied is preferably adjusted as appropriate depending on the characteristics of the translucent material and the third wavelength conversion substance and the size of the convex portion. The compounding ratio (weight ratio) and coating amount of the third wavelength conversion substance and the translucent material in the wavelength conversion part 15 and the type of the third wavelength conversion substance are adjusted after the step of forming the wavelength conversion layer 13 described above. It is preferable to measure variation and adjust as appropriate based on the obtained measurement results. As a method for applying the wavelength conversion site 15, for example, a potting method, ink jet, spray spraying, printing method, or the like can be used. For example, as shown in FIG. 3 (e), a translucent material 15b containing a third wavelength converting substance 15a is dropped inside the convex part 14, and the convex part 14 is shown in FIG. 3 (f). Fill inside. Thereafter, heat treatment is performed to cure the translucent material 15b of the wavelength conversion portion 15. As described above, the light emitting device 10 according to the present embodiment can be obtained.

Second Embodiment
FIG. 4A is a schematic cross-sectional view showing an example of the light emitting device 10 according to the second embodiment of the present invention. FIG. 4B is an enlarged schematic cross-sectional view of a part of the light emitting device 10 according to the first embodiment of the present invention. The light emitting device 10 according to the present embodiment is substantially the same as the light emitting device 10 according to the first embodiment, except that the arrangement of the second wavelength conversion substance or the base material 14a is different.

  The light emitting device 10 according to this embodiment includes a wavelength conversion layer 13 including a wavelength conversion material 13 a on a light emitting element 12 mounted on a base 11. On the wavelength conversion layer 13, a convex portion 14 surrounding the central portion of the upper surface of the wavelength conversion layer 13 is formed. A wavelength conversion part 15 is formed inside the convex part 14.

  In the light emitting device 10 of the present embodiment, the wavelength conversion layer 13 exposed inside the convex portion 14 is not covered with the second wavelength conversion material or the base material 14a. Further, in the wavelength conversion layer 13 exposed inside the convex portion 14, a translucent material 14b is disposed between the particles of the first wavelength conversion material 13a. Even in such a configuration, the wavelength conversion portion 15 can be stably disposed on the wavelength conversion layer 13.

  Examples according to the present invention will be described in detail below.

  FIG. 1 is a schematic cross-sectional view showing a light emitting device 10 according to the present embodiment. In this embodiment, the wavelength conversion layer 13 is formed on the light emitting element 12 mounted on the substrate 11, and the convex portion 14 is formed on the wavelength conversion layer 13. Further, the wavelength conversion part 15 is formed inside the convex part 14.

  Table 1 shows materials constituting the wavelength conversion layer 13, the convex portion 14, and the wavelength modifying layer 15.

  The wavelength conversion layer 13 is formed by depositing on the light emitting element by the electrodeposition method using the wavelength conversion substance.

  The convex portion 14 is formed by applying a translucent material containing the wavelength converting substance or the base material using a potting method. The compounding ratio (weight ratio) of the wavelength conversion substance or base material and the translucent material in the convex portion is set to translucent material: wavelength conversion substance or base material = 10: 1. A part of the applied translucent material is impregnated with the wavelength conversion substance of the wavelength conversion layer 13. After the material of the convex part is applied, it is heated and cured.

  The wavelength conversion site 15 is formed using a potting method. The compounding ratio (weight ratio) of the wavelength conversion substance and the translucent material at the wavelength conversion site is set to translucent material: wavelength conversion substance = 20: 1.

  By manufacturing the light-emitting device as described above, a light-emitting device with little color variation can be obtained.

Comparative example

  As a comparative example, a light emitting device having a structure similar to that of the example is formed except that the convex portion and the wavelength conversion portion are not formed.

  Three light emitting devices similar to those of the example and one light emitting device similar to the comparative example were prepared. In addition, these light-emitting devices are produced by producing a plurality of light-emitting devices in which the wavelength conversion layer 13 is formed on the light-emitting element 12 mounted on the substrate 11, and selecting one having a relatively large color variation among them. It is. Table 2 shows the change in luminous intensity with respect to the angle with respect to the angle with respect to the vertical line on the top surface of the light emitting device, for the light emitting device (Nos. 1 to 3) similar to Example 1 and the light emitting device similar to the comparative example. It is the table | surface used and compared.

  As shown in Table 2, the light emitting device of the example has a smaller change amount of the color temperature with respect to the angle and less variation of the light emission intensity distribution than the light emitting device of the comparative example. Therefore, the light emitting device of this embodiment can further improve the color tone variation of the light emitting device.

  The light emitting device of the present invention can be used for a wide range of applications such as a light source for a display or a lighting device.

DESCRIPTION OF SYMBOLS 10 Light-emitting device 11 Base | substrate 12 Light emitting element 13 Wavelength conversion layer 13a 1st wavelength conversion substance 14 Convex part 14a 2nd wavelength conversion substance or base material 14b Translucent material 15 Wavelength conversion part 15a 3rd wavelength conversion substance 15b Translucent material 16 Bonding member 17 Coating layer

Claims (8)

Forming a wavelength conversion layer that absorbs light from the light emitting element and converts it into light of a different wavelength on the light emitting element;
On the wavelength conversion layer, forming a convex portion surrounding part or all of the upper surface of the wavelength conversion layer;
Forming a wavelength conversion part that absorbs light from the light emitting element and converts it into light of a different wavelength inside the convex part;
A method for manufacturing a light-emitting device, comprising:   The method of manufacturing a light emitting device according to claim 1, wherein the step of forming the convex portion forms the convex portion so as to surround a central portion of the upper surface of the wavelength conversion layer.   3. The step of forming the convex portion, wherein the convex portion is formed by applying a light-transmitting material on the wavelength conversion layer and then curing the material. Method for manufacturing the light emitting device.   4. The method for manufacturing a light emitting device according to claim 3, wherein the translucent material is made of at least one selected from the group consisting of silicone resin, epoxy resin, and glass. A light-emitting element, and a wavelength conversion layer formed on the light-emitting element, which absorbs light from the light-emitting element and converts it into light of different wavelengths;
With
The upper surface of the wavelength conversion layer includes a translucent material, and has a convex portion surrounding part or all of the upper surface of the light emitting element,
A light-emitting device, wherein a wavelength conversion part that absorbs light from the light-emitting element and converts it into light having a different wavelength is formed inside the convex part.   The light emitting device according to claim 5, wherein the convex portion is formed so as to surround a central portion of an upper surface of the light emitting element.   The light emitting device according to claim 5, wherein the wavelength conversion layer and the convex portion are integrally formed.   The light emitting device according to claim 5, wherein a surface of the wavelength conversion part has a curved surface protruding upward.

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