JP2013009407A - Photoelectric conversion device, imaging system, and driving method of photoelectric conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device capable of suppressing that disturbance noise is superimposed on a signal.SOLUTION: A photoelectric conversion device comprises: a pixel array in which a plurality of pixels are arrayed in a row direction and a column direction; a plurality of readout circuits for reading out signals from the pixels for respective columns in the pixel array; and a control unit for controlling each of the plurality of readout circuits. The plurality of readout circuits comprise: a holding unit for holding reference voltage supplied from the outside; an operational amplification unit for amplifying the signals from the pixels for each column on the basis of the reference voltage held in the holding unit; and a disconnection unit for electrically disconnecting the outside and the holding unit. The control unit controls the disconnection unit so as to electrically disconnect the outside and the holding unit when the operational amplification unit amplifies the signals of the pixels for each column.

Description

  The present invention relates to a photoelectric conversion device and an imaging system.

  As an active photoelectric conversion device, there is a photoelectric conversion device including an operational amplifier. Such a photoelectric conversion device 100 includes a pixel array, a plurality of readout circuits 130, a vertical shift register 123, and a horizontal shift register 119, as shown in FIG. In the pixel array, a plurality of pixels GU11 to GUmn (m: natural number, n: natural number) are two-dimensionally arranged (in the row direction and the column direction). The readout circuit 130 is provided for each column of the pixel array (pixels GU11 to GUmn). The vertical shift register 123 and the horizontal shift register 119 are connected to the pixels GU11 to GUmn, respectively.

  The vertical shift register 123 selects a readout row (pixel row). In each pixel in the selected row, a signal based on charges read from the photodiode 101 to the floating diffusion (hereinafter referred to as FD) via the transfer transistor 102 is converted into a signal (noise signal or optical signal) by the amplification transistor 104. Converted. The signal is read and held in the readout circuit 130 via the vertical signal line 106 for each column of pixels. The horizontal shift register 119 sequentially turns on the horizontal transfer switch 114 and sequentially outputs the signals held in the readout circuits 130 of the respective columns via the horizontal signal line 116 and the output circuit 118.

  In the read circuit 130, the clamp capacitor 108 accumulates the signal read through the vertical signal line 106. The operational amplifier 120 amplifies the difference between the accumulated noise signal and optical signal based on the reference voltage VREF input from the outside. The line memory 112 holds the amplified signal.

  As described above, as a technique using a readout circuit including an operational amplifier that amplifies an accumulated signal based on a reference voltage (clamp voltage Vclp) input from the outside, a technique disclosed in Patent Document 1 is proposed. .

JP 2005-269471 A

  However, in the technique shown in Patent Document 1, when disturbance noise is mixed in the reference voltage input to the operational amplifier in the readout circuit, the disturbance noise may be superimposed on a signal (noise signal or optical signal). As a result, horizontal stripe-like random noise may appear in the image generated by the difference between the noise signal and the optical signal.

  An object of the present invention is to provide a photoelectric conversion device and an imaging system capable of suppressing disturbance noise from being superimposed on a signal.

  The photoelectric conversion device according to the first aspect of the present invention includes a pixel array in which a plurality of pixels are arranged in a row direction and a column direction, a plurality of readout circuits that read signals from pixels in each column in the pixel array, and the plurality of pixels A plurality of readout circuits, each of the plurality of readout circuits includes a holding unit that holds a reference voltage supplied from the outside, and each of the reading circuits based on the reference voltage held by the holding unit. An operational amplification unit that amplifies a signal of a pixel in a column; and a blocking unit that electrically blocks the outside and the holding unit; and the control unit is configured such that the operational amplification unit outputs a signal of the pixel in each column. The blocking unit is controlled so as to electrically block the outside and the holding unit during amplification.

  An imaging system according to a second aspect of the present invention is a method of processing image data by processing the photoelectric conversion device, an optical system that forms an image on an imaging surface of the photoelectric conversion device, and a signal output from the photoelectric conversion device. And a signal processing unit for generating.

  The photoelectric conversion device driving method according to the third aspect of the present invention includes a pixel array in which a plurality of pixels are arrayed in a row direction and a column direction, and a readout circuit that reads signals from the pixels in the pixel array, The readout circuit is a driving method of a photoelectric conversion device including a holding unit that holds a reference voltage supplied from the outside, and a supply step of supplying a reference voltage to the holding unit from the outside, and after the supply step, A step of electrically shutting off the outside and the holding unit; and an amplification step of amplifying the signal of the pixel in each column based on the reference voltage held by the holding unit after the blocking step. It is characterized by that.

  According to the present invention, it is possible to suppress disturbance noise from being superimposed on a signal.

The block diagram of the photoelectric conversion apparatus which concerns on 1st Embodiment of this invention. The block diagram of the read-out circuit in 1st Embodiment of this invention. The figure which shows the structure of the operational amplifier and hold capacity | capacitance in 1st Embodiment of this invention. 6 is a timing chart of signals supplied to a reading circuit. 1 is a configuration diagram of an imaging system to which a photoelectric conversion device according to a first embodiment is applied. The block diagram of the photoelectric conversion apparatus which concerns on 2nd Embodiment of this invention. The block diagram of the photoelectric conversion apparatus which concerns on 3rd Embodiment of this invention. The block diagram of the photoelectric conversion apparatus which concerns on 4th Embodiment of this invention. The figure for demonstrating background art.

  A photoelectric conversion device according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a configuration diagram of a photoelectric conversion apparatus according to the first embodiment of the present invention. FIG. 2 is a configuration diagram of the readout circuit in the first embodiment of the present invention. FIG. 3 is a diagram showing the configuration of the operational amplifier and the hold capacitor in the first embodiment of the present invention. FIG. 4 is a timing chart of signals supplied to the reading circuit. Note that description will be made mainly on parts different from the photoelectric conversion device 100 illustrated in FIG. 9, and description of similar parts will be omitted.

  The photoelectric conversion device 200 includes a reading circuit 230 and a plurality of reading circuits 230 i instead of the reading circuit 130, and includes a vertical shift register (control unit) 223 instead of the vertical shift register 123. As shown in FIG. 2, the readout circuit 230 is connected only to the pixels in the first column. The plurality of readout circuits 230i are connected to the pixels in the second column to the n-th column, respectively. The readout circuit 230 and the plurality of readout circuits 230i each read out signals from the pixels in each column in the pixel array. In addition, the reading circuit 230 and the plurality of reading circuits 230i receive the PCOR signal, the PCVR signal, and the PT signal from the vertical shift register 223 through the input terminals, and perform operations according to these signals. That is, the vertical shift register 223 controls (drives) the reading circuit 230 and the plurality of reading circuits 230i.

  The readout circuit 230 includes a hold capacitor (holding unit) 46, an operational amplifier (operational amplification unit) 40, and a switch (cut-off unit) 45. One end of the hold capacitor 46 is connected to the non-inverting input terminal (reference input node) (+) of the operational amplifier 40 and the switch 45. The other end of the hold capacitor 46 is connected to a low impedance wiring such as a power supply or GND (fixed potential).

  Each of the plurality of readout circuits 230 i shares the hold capacitor 46 and the switch 45 with the readout circuit 230. That is, the hold capacitor 46 and the switch 45 are shared by all the read circuits in the plurality of read circuits 230 and 230i.

  Note that the following points are the same as those of the photoelectric conversion device 100 illustrated in FIG. 9. In the pixel arrangement, a plurality of pixels GU11 to GUmn (m: natural number, n: natural number) are arranged two-dimensionally (in the row direction and the column direction). The vertical shift register 223 selects a readout row (pixel row). In each pixel in the selected row, a photodiode (photoelectric conversion unit) 101 converts incident light into an electrical signal. A signal based on charges read from the photodiode 101 to the floating diffusion (hereinafter referred to as FD) via the transfer transistor 102 is converted into a signal (noise signal or optical signal) by the amplification transistor (amplification unit) 104. The output signal is read and held by the read circuits 230 and 230i via the vertical signal line 106 for each column of pixels. The horizontal shift register 39 sequentially turns on the horizontal transfer switch 34 and sequentially outputs the signals held in the read circuits 230 and 230i of each column via the horizontal signal line 35 and the output circuit 38.

  A detailed configuration of the operational amplifier 40 and the hold capacitor 46 will be described with reference to FIG. In the description of FIGS. 3 and 4, the transistor 41 and the transistor 45 are functionally referred to as a first switch 41 and a second switch 45.

  One end of a hold capacitor 46 is connected to the non-inverting input terminal (+) of the operational amplifier 40. The other end of the hold capacitor 46 is connected to GND. The non-inverting input terminal (+) of the operational amplifier 40 is connected to the outside through the second switch 45.

  On the other hand, the vertical signal line 106 is connected to the inverting input terminal (−) of the operational amplifier 40 via the clamp capacitor 31. A first switch 41 and a feedback capacitor 42 are connected in parallel between the output terminal and the inverting input terminal (−) of the operational amplifier 40.

  Next, detailed operations of the operational amplifier 40 and the hold capacitor 46 will be described with reference to FIG.

  At the timing (supplying step) immediately before timing T1, the vertical shift register 223 (control unit, see FIG. 1) sets the PCVR signal to Hi (activated). As a result, the second switch 45 provided between the hold capacitor 46 and the external power supply is ON, and the reference voltage (fixed potential) VREF is supplied (charged) from the external power supply to the hold capacitor 46 via the reference voltage line. Has been.

  At timing T1 (blocking step) before the signal readout period, the vertical shift register 223 (see FIG. 1) changes the PCVR signal from Hi to Low (deactivates). As a result, the second switch 45 provided between the hold capacitor 46 and the external power supply is turned OFF, and the external power supply and the hold capacitor 46 are electrically disconnected. The hold capacitor 46 holds the reference voltage.

  At timing T2, the vertical shift register 223 (see FIG. 1) changes the PCOR signal from Low to Hi (activates). As a result, the first switch 41 connected between the inverting input terminal and the output terminal of the operational amplifier 40 is turned on, so that the operational amplifier 40 enters a voltage follower state, and the output of the operational amplifier 40 is reset to the reference voltage VREF. The

  At timing T3, the vertical shift register 223 (see FIG. 1) changes the PCOR signal from Hi to Low (deactivates). As a result, the first switch 41 connected between the inverting input terminal and the output terminal of the operational amplifier 40 is turned OFF, so that the operational amplifier 40 is fed back from the output to the input via the feedback capacitor 42. The operational amplifier 40 amplifies the signal stored in the clamp capacitor 31 according to the capacitance ratio between the feedback capacitor 42 and the clamp capacitor 31 based on the reference voltage VREF input from the outside.

In the period (amplification step) from timing T3 to T4, the clamp capacitor 31 accumulates a noise signal and an optical signal transmitted via the vertical signal line 106. The operational amplifier 40 amplifies and outputs a signal corresponding to the difference between the noise signal and the optical signal.
At timing T4, the vertical shift register 223 (see FIG. 1) changes (activates) the PT signal from Low to Hi. As a result, the transistor 32 (see FIG. 2) is turned on, and the signal (difference signal) output from the operational amplifier 40 is supplied to the line memory 33.

  At timing T5, the vertical shift register 223 (see FIG. 1) changes the PT signal from Hi to Low (deactivates). Thereby, the transistor 32 (see FIG. 2) is turned OFF, and the operational amplifier 40 and the line memory 33 are shut off.

  At timing T6, the vertical shift register 223 (see FIG. 1) sets the PCVR signal to Hi (activated). As a result, the second switch 45 provided between the hold capacitor 46 and the external power supply is ON, and the reference voltage VREF is supplied (charged) from the external power supply to the hold capacitor 46 again.

  As described above, when the noise signal / optical signal is sampled and held or the difference between the noise signal and the optical signal is calculated, the outside and the hold capacitor 46 are electrically disconnected. That is, the vertical shift register 223 controls the second switch 45 so that the external and the hold capacitor 46 are electrically disconnected when the operational amplifier 40 amplifies the signal of the pixel of each column. As a result, the influence of disturbance noise on the reference voltage VREF supplied from the hold capacitor 46 to the operational amplifier 40 can be reduced. That is, since temporal variation of the reference voltage during reading of the noise signal and reading of the optical signal can be suppressed, it is possible to reduce the disturbance noise from being superimposed on the signal, and to reduce the appearance of horizontal stripe-like random noise in the image.

  In addition, since the hold capacitors 46 are provided in common for all the columns (see FIGS. 1 and 2), it is possible to secure a circuit space and reduce the influence of variations in characteristics of the hold capacitors 46 on the image.

  Further, since the PCVR signal is activated immediately after the PT signal is deactivated, a sufficient time for charging the hold capacitor 46 with the reference voltage VREF is secured.

  It should be noted that the second switch 45 provided between the non-inverting input terminal (+) of the operational amplifier 40 and the outside is turned off at least between reading out the noise signal and reading out the optical signal during the signal reading period. It may work.

  The hold capacitor 46 may be formed as a parasitic capacitor such as a junction capacitor. In this case, a space for forming the hold capacitor 46 can be saved, and a circuit space can be further secured.

  Next, an example of an imaging system to which the photoelectric conversion device according to the first embodiment is applied will be described with reference to FIG. FIG. 5 is a configuration diagram of an imaging system to which the photoelectric conversion device according to the first embodiment is applied.

  As shown in FIG. 5, the imaging system 90 mainly includes an optical system, an imaging device 186, and a signal processing unit. The optical system mainly includes a shutter 91, a photographing lens 92, and a diaphragm 93. The imaging device 186 includes a photoelectric conversion device 200. The signal processing unit mainly includes an imaging signal processing circuit 95, an A / D converter 96, an image signal processing unit 97, a memory unit 87, an external I / F unit 89, a timing generation unit 98, an overall control / calculation unit 99, and a recording. A medium 88 and a recording medium control I / F unit 94 are provided. The signal processing unit may not include the recording medium 88.

  The shutter 91 is provided in front of the photographic lens 92 on the optical path and controls exposure.

  The photographic lens 92 refracts incident light to form an image of a subject on the imaging surface of the photoelectric conversion device 200 of the imaging device 186.

  The diaphragm 93 is provided between the photographing lens 92 and the photoelectric conversion device 200 on the optical path, and adjusts the amount of light guided to the photoelectric conversion device 200 after passing through the photographing lens 92.

  The photoelectric conversion device 200 of the imaging device 186 converts the subject image formed on the photoelectric conversion device 200 into an image signal. The imaging device 186 reads the image signal from the photoelectric conversion device 200 and outputs it.

  The imaging signal processing circuit 95 is connected to the imaging device 186 and processes the image signal output from the imaging device 186.

  The A / D converter 96 is connected to the imaging signal processing circuit 95 and converts the processed image signal (analog signal) output from the imaging signal processing circuit 95 into a digital signal.

  The image signal processing unit 97 is connected to the A / D converter 96, and performs various kinds of arithmetic processing such as correction on the image signal (digital signal) output from the A / D converter 96 to generate image data. To do. The image data is supplied to the memory unit 87, the external I / F unit 89, the overall control / calculation unit 99, the recording medium control I / F unit 94, and the like.

  The memory unit 87 is connected to the image signal processing unit 97 and stores the image data output from the image signal processing unit 97.

  The external I / F unit 89 is connected to the image signal processing unit 97. Thus, the image data output from the image signal processing unit 97 is transferred to an external device (such as a personal computer) via the external I / F unit 89.

  The timing generation unit 98 is connected to the imaging device 186, the imaging signal processing circuit 95, the A / D converter 96, and the image signal processing unit 97. Thereby, a timing signal is supplied to the imaging device 186, the imaging signal processing circuit 95, the A / D converter 96, and the image signal processing unit 97. The imaging device 186, the imaging signal processing circuit 95, the A / D converter 96, and the image signal processing unit 97 operate in synchronization with the timing signal.

  The overall control / arithmetic unit 99 is connected to the timing generation unit 98, the image signal processing unit 97, and the recording medium control I / F unit 94, and the timing generation unit 98, the image signal processing unit 97, and the recording medium control I / F. The unit 94 is controlled as a whole.

  The recording medium 88 is detachably connected to the recording medium control I / F unit 94. Thereby, the image data output from the image signal processing unit 97 is recorded on the recording medium 88 via the recording medium control I / F unit 94.

  With the above configuration, if a good image signal is obtained in the photoelectric conversion device 200, a good image (image data) can be obtained.

  Next, a photoelectric conversion device according to a second embodiment of the present invention will be described with reference to FIG. FIG. 6 is a configuration diagram of a photoelectric conversion apparatus according to the second embodiment of the present invention. In addition, it demonstrates centering on a different part from 1st Embodiment, and abbreviate | omits description about the same part.

  The photoelectric conversion device 300 includes a read circuit 330 instead of the read circuit 230, and includes a read circuit 330 instead of the read circuit 230i. The readout circuits 330 in the second and subsequent columns have the same configuration as the readout circuit 330 in the first column, and one end of the hold capacitor 66 is connected to the non-inverting input terminal (+) of the operational amplifier 60. , Different from the readout circuit 230i. The other end of the hold capacitor 66 is connected to GND. A timing chart of signals for operating the operational amplifier 60 and the hold capacitor 66 is the same as that shown in FIG. That is, each of the plurality of readout circuits 330 includes an operational amplifier 60, a hold capacitor 66, and a switch 65.

  Thus, the hold capacitor 66 and the switch 65 are individually provided for each column of the pixels GU11 to GUmn. This is the same as the first embodiment in that the temporal variation of the reference voltage during reading of the noise signal and reading of the optical signal can be suppressed. Therefore, also with such a photoelectric conversion device 300, it is possible to reduce disturbance noise from being superimposed on a signal, and it is possible to reduce horizontal stripe-like random noise.

  Furthermore, when sampling and holding a noise signal / optical signal or calculating a difference between the noise signal and the optical signal, the external and the operational amplifier are electrically cut off, so that crosstalk inside the chip can be reduced. .

  Next, a photoelectric conversion device according to a third embodiment of the present invention will be described with reference to FIG. FIG. 7 is a configuration diagram of a photoelectric conversion apparatus according to the third embodiment of the present invention. In addition, it demonstrates centering on a different part from 1st Embodiment, and abbreviate | omits description about the same part.

  The photoelectric conversion device 400 includes a read circuit 430 instead of the read circuit 230, and includes a read circuit 430i instead of the read circuit 230i.

  The readout circuit 430 is provided for every k columns (k <n; natural number) of the pixels GU11 to GUmn. The read circuit 430i is provided in the other columns.

  For example, when the reading circuit 430 is provided in the first column, the reading circuit 430i is provided in the second column to the k-th column. A read circuit 430 is provided again in the (k + 1) th column. Thereafter, the same is repeated. That is, the plurality of readout circuits are configured by repeating readout circuit groups (430, 430i) in which the hold capacitor 86 and the switch 85 are shared. A timing chart of signals for operating the operational amplifier 80 and the hold capacitor 86 is the same as that in FIG.

  Thus, since the hold capacitor 86 is provided in common for the k columns, a circuit space can be secured. Also, when sampling and holding a noise signal / optical signal or calculating the difference between the noise signal and the optical signal, the external and the operational amplifier are electrically disconnected, so that crosstalk inside the chip can be reduced. .

  Similar to the first embodiment, the temporal variation of the reference voltage during reading of the noise signal and reading of the optical signal can be suppressed. Therefore, even with such a photoelectric conversion device 400, it is possible to reduce disturbance noise from being superimposed on a signal, and it is possible to reduce horizontal stripe-like random noise.

  In addition, here, an example in which the hold capacitor 86 and the switch 85 are made common to the readout circuits for k columns and this is repeated is shown. There may be units with different numbers of columns to be converted. That is, the hold capacitor and the switch may be shared by at least a part of the plurality of readout circuits.

  A photoelectric conversion device according to a fourth embodiment of the present invention will be described with reference to FIG. FIG. 8 is a configuration diagram of a photoelectric conversion apparatus according to the fourth embodiment of the present invention. Here, the description will focus on parts that are different from the first embodiment, and description of similar parts will be omitted.

  The photoelectric conversion device 500 is different from the first embodiment in that it includes a plurality of output paths (a first output path and a second output path). The first output path includes first read circuits 530-1 and 530i-1. The second output path includes second readout circuits 530-2 and 530i-2. The first readout circuits 530-1 and 530 i-1 are connected to one end of at least some of the plurality of vertical signal lines 106. The second readout circuits 1, 530-2, 530i-2 are connected to the other ends of at least some of the plurality of vertical signal lines 106, which are different from the plurality of vertical signal lines connected to the first readout circuit. ing.

  For example, pixels belonging to the first pixel column (first column) from the left side of the drawing are connected to the first readout circuit 530-1 through the vertical signal line 106. The other pixels belonging to the odd-numbered pixel columns (first column) counted from the left side are connected to a first readout circuit 530i-1 provided corresponding to each column. The first readout circuits 530-1 and 530i-1 each output a signal output from the connected pixel to the first output line 116-1.

  On the other hand, the pixels belonging to the second pixel column (second column) from the left side of the drawing are connected to the second readout circuit 530-2. Pixels belonging to other even-numbered pixel columns (second column) are connected to a second readout circuit 530 i-2 provided corresponding to each column. The second readout circuits 530-2 and 530i-2 each output a signal output from the connected pixel to the second output line 116-2.

  In this way, the first readout circuit included in the first output path reads out signals from the pixels in the first column, and the second readout circuit included in the second output path is in the second column. The operation of reading out signals from the pixels is performed in parallel. As a result, signals can be read out at high speed.

  Note that the first read circuits 530-1 and 530i-1 share the hold capacitor 96-1 and the second switch 95-1, and the second read circuits 530-2 and 530i-2 share the hold capacitor. 96-2 and the second switch 95-2 are shared. That is, the hold capacitor 96-1 and the switch 95-1 are shared by all the read circuits in the plurality of first read circuits 530-1 and 530i-1. A hold capacitor 96-2 and a switch 95-2 are shared by all the read circuits in the plurality of second read circuits 530-2 and 530i-2.

  In the present embodiment, the read circuit 530-n and 530i-n on one side share the hold capacitor and the switch. However, the read circuits 530-n and 530i-n share the hold capacitor and the switch. Also good. That is, each of the plurality of first readout circuits may include an operational amplifier, a hold capacitor, and a switch, and each of the plurality of second readout circuits may include an operational amplifier, a hold capacitor, and a switch. Alternatively, the plurality of first readout circuits are configured by repeating a first readout circuit group in which a hold capacitor and a switch are shared, and the plurality of second readout circuits have a common hold capacitor and a switch. It may be configured by repeating the second read circuit group. Further, in some of the plurality of first and second output paths, a configuration in which a hold capacitor and a switch are shared by some of the readout circuits may be used. In other words, in each of the plurality of first and second readout circuits, at least a part of the hold capacitor and the switch may be shared.

  Furthermore, the number of channels to be read is not limited to two.

  In the above-described embodiments, the hold capacitor is connected in parallel to the switch. However, the hold capacitor may be connected in series with the switch. In this case, however, it is necessary to add a configuration for applying a reset potential (fixed potential) to the terminal of the hold capacitor connected to the reference input side terminal of the operational amplifier. Specifically, for example, a configuration in which a terminal connected to a reference input terminal of an operational amplifier of a hold capacitor is connected to a power supply that supplies the above-described reset potential via a switch (reset switch) is conceivable.

40, 60, 80, 120 Operational amplifiers 46, 66, 86, 96-1, 96-2 Hold capacitors 100, 200, 300, 400, 500 Photoelectric conversion devices

In the photoelectric conversion device according to the first aspect of the present invention, a plurality of pixels are arranged in a row direction and a column direction, and each of the plurality of pixels includes a photoelectric conversion unit and a signal based on charges accumulated in the photoelectric conversion unit. A pixel array including an amplifying unit for amplifying the signal, a read unit including a plurality of read circuits that read signals from pixels in each column in the pixel array via a vertical signal line, a control unit that controls the read unit, The reading unit includes a holding unit that holds a reference voltage supplied from the outside, and a blocking unit that electrically cuts off the outside and the holding unit, and each of the plurality of reading circuits includes: A clamp capacitor; and a differential amplifier in which one input node is connected to the vertical signal line through the clamp capacitor, and the other input node is connected to the holding unit. Part The left and the outside is maintained a state of being electrically disconnected by the cutoff unit, it amplifies a signal corresponding to the difference between the noise signal and the optical signals sequentially output from the pixel.

In the driving method of the photoelectric conversion device according to the third aspect of the present invention, a plurality of pixels are arranged in a row direction and a column direction, and each of the plurality of pixels is based on a charge accumulated in the photoelectric conversion unit and the photoelectric conversion unit. A method for driving a photoelectric conversion device, comprising: a pixel array including an amplifier that amplifies a signal; and a read unit including a plurality of read circuits that read signals from pixels in each column in the pixel array via vertical signal lines. The reading unit includes a holding unit that holds a reference voltage supplied from outside, and a blocking unit that electrically cuts off the outside and the holding unit, and each of the plurality of reading circuits includes a clamp. And a differential amplifier in which one input node is connected to the vertical signal line through the clamp capacitor and the other input node is connected to the holding unit, and the driving method includes the holding method. The signal corresponding to the difference between the noise signal and the optical signal sequentially output from the pixel is supplied to the differential amplifier while maintaining the state in which the block and the outside are electrically blocked by the blocking unit. Amplifying.

  The present invention relates to a photoelectric conversion device, an imaging system, and a driving method of the photoelectric conversion device.

Claims (16)

A pixel array in which a plurality of pixels are arranged in a row direction and a column direction;
A plurality of readout circuits for reading out signals from pixels in each column in the pixel array;
A control unit for controlling each of the plurality of readout circuits;
With
The plurality of readout circuits include
A holding unit for holding a reference voltage supplied from the outside;
Based on the reference voltage held by the holding unit, an operational amplification unit that amplifies the signal of the pixel in each column;
A blocking portion for electrically blocking the outside and the holding portion;
Including
The control unit controls the blocking unit so as to electrically block the outside and the holding unit when the operational amplification unit amplifies the signal of the pixel in each column. Conversion device. Each of the plurality of pixels is
A photoelectric conversion unit;
An amplifying unit for amplifying a signal due to charges accumulated in the photoelectric conversion unit;
Including
At least a part of the plurality of readout circuits includes:
An operational amplifier that amplifies a signal input from the amplification unit of the pixel based on a voltage input via a reference input node;
A hold capacitor connected to the reference input node;
A switch connected between a reference voltage line to which the reference voltage is supplied and the hold capacitor;
Including
2. The control unit according to claim 1, wherein the control unit controls the switch so as to shut off the reference voltage line and the operational amplifier when the operational amplifier amplifies the signal of the pixel of each column. The photoelectric conversion device described. The photoelectric conversion apparatus according to claim 2, wherein one end of the hold capacitor is connected to the reference input node, and the other end is connected to a fixed potential. The hold capacitor has one end connected to the reference input node, the other end connected to the switch, and the one end connected to a power source that supplies a fixed potential via a reset switch. The photoelectric conversion device according to claim 2. 5. The photoelectric conversion device according to claim 2, wherein all of the readout circuits in the plurality of readout circuits share the hold capacitor and the switch. 6. 5. The photoelectric conversion device according to claim 2, wherein each of the plurality of readout circuits includes the operational amplifier, the hold capacitor, and the switch. 5. The photoelectric conversion device according to claim 2, wherein the plurality of readout circuits are configured by repetition of a readout circuit group in which the hold capacitor and the switch are shared. 6. A plurality of vertical signal lines connected to the pixels of each column in the pixel array;
The plurality of readout circuits include
A first readout circuit connected to one end of at least a part of the plurality of vertical signal lines;
A second readout circuit connected to the other end of at least a part of the plurality of vertical signal lines, which is different from the plurality of vertical signal lines to which the first readout circuit is connected;
Including
The operation in which the first readout circuit reads out signals from the pixels in the first column and the operation in which the second readout circuit reads out signals from the pixels in the second column are performed in parallel. The photoelectric conversion device according to any one of claims 2 to 4. In all the read circuits in the plurality of first read circuits, the hold capacitor and the switch are shared,
The photoelectric conversion device according to claim 8, wherein the hold capacitor and the switch are shared by all the read circuits in the plurality of second read circuits. Each of the plurality of first readout circuits includes the operational amplifier, the hold capacitor, and the switch,
The photoelectric conversion device according to claim 8, wherein each of the plurality of second readout circuits includes the operational amplifier, the hold capacitor, and the switch. The plurality of first readout circuits are configured by repetition of a first readout circuit group in which the hold capacitor and the switch are shared,
The photoelectric conversion device according to claim 8, wherein the plurality of second readout circuits are configured by repeating a second readout circuit group in which the hold capacitor and the switch are shared. The photoelectric conversion device according to claim 2, wherein the hold capacitor is formed as a parasitic capacitor. The photoelectric conversion device according to any one of claims 1 to 12,
An optical system that forms an image on the imaging surface of the photoelectric conversion device;
A signal processing unit that processes the signal output from the photoelectric conversion device to generate image data;
An imaging system comprising: A holding unit that holds a reference voltage supplied from the outside, and a pixel array in which a plurality of pixels are arranged in a row direction and a column direction; and a readout circuit that reads out signals from the pixels in the pixel array A method for driving a photoelectric conversion device including:
A supply step of supplying a reference voltage to the holding unit from the outside;
After the supplying step, a blocking step for electrically blocking the outside and the holding unit;
After the blocking step, an amplification step of amplifying the pixel signals of each column based on the reference voltage held by the holding unit;
A method for driving a photoelectric conversion device comprising: 5. The photoelectric conversion device according to claim 2, wherein at least a part of the plurality of readout circuits share the hold capacitor and the switch. 6. At least some of the plurality of first readout circuits share the hold capacitor and the switch,
9. The photoelectric conversion device according to claim 8, wherein at least a part of the plurality of second readout circuits share the hold capacitor and the switch.

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