JP2013004609A5 - - Google Patents
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- JP2013004609A5 JP2013004609A5 JP2011132210A JP2011132210A JP2013004609A5 JP 2013004609 A5 JP2013004609 A5 JP 2013004609A5 JP 2011132210 A JP2011132210 A JP 2011132210A JP 2011132210 A JP2011132210 A JP 2011132210A JP 2013004609 A5 JP2013004609 A5 JP 2013004609A5
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- bonding
- substrate
- temporary
- substrates
- joining
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Description
本発明の第１の態様においては、複数の基板の少なくとも一つに設けられた仮接合部により複数の基板を接合する仮接合段階と、仮接合段階で仮接合された複数の基板を搬送する搬送段階と、搬送段階で搬送された複数の基板を、複数の基板のそれぞれに設けられた本接合部によって本接合する本接合段階とを備える基板貼り合わせ方法を提供する。 In the first aspect of the present invention, a temporary bonding step of bonding a plurality of substrates by a temporary bonding portion provided on at least one of the plurality of substrates, and a plurality of substrates temporarily bonded in the temporary bonding step are conveyed. Provided is a substrate bonding method including a transfer stage, and a main bonding stage in which a plurality of substrates transferred in the transfer stage are finally bonded by a main bonding portion provided on each of the plurality of substrates .
アライナ２８は、ロボットアーム２４とロボットアーム３０との間に配置されている。アライナ２８は、枠体３４と、固定ステージ部３６と、移動ステージ部３８と、一対のシャッタ４０及びシャッタ４２とを有する。 The aligner 28 is disposed between the robot arm 24 and the robot arm 30. The aligner 28 includes a frame body 34, a fixed stage unit 36, a moving stage unit 38, and a pair of shutters 40 and a shutter 42.
加熱加圧装置５６は、断熱壁４６の内部に配置されている。３個の加熱加圧装置５６は、断熱壁４６の中心の周りに略等角度間隔で配置されている。加熱加圧装置５６は、ロボットアーム５４によってエアロック室４８から搬入された重ね合わせ基板９２を保持する。加熱加圧装置５６は、結合温度状態の重ね合わせ基板９２を加圧する。そして、加熱加圧装置５６は、重ね合わせ基板９２の基板９０が結合可能な結合温度まで、搬入された重ね合わせ基板９２を昇温させる。これにより、加熱加圧装置５６は、重ね合わせ基板９２を結合して貼り合わせる。 The heating / pressurizing device 56 is disposed inside the heat insulating wall 46. The three heating / pressurizing devices 56 are arranged at substantially equal angular intervals around the center of the heat insulating wall 46. The heating / pressurizing device 56 holds the overlapping substrate 92 carried from the air lock chamber 48 by the robot arm 54. The heating / pressurizing device 56 pressurizes the overlapping substrate 92 in the combined temperature state. Then, the heating and pressurizing device 56 raises the temperature of the loaded overlapping substrate 92 to a bonding temperature at which the substrate 90 of the overlapping substrate 92 can be bonded. Thereby, the heating and pressurizing device 56 combines and bonds the overlapping substrates 92 together.
Claims (30)
前記仮接合段階で仮接合された前記複数の基板を搬送する搬送段階と、
前記搬送段階で搬送された前記複数の基板を、前記複数の基板のそれぞれに設けられた本接合部によって本接合する本接合段階と、
を備える基板貼り合わせ方法。 A temporary bonding step of bonding the plurality of substrates by a temporary bonding portion provided on at least one of the plurality of substrates ;
A transporting stage for transporting the plurality of substrates temporarily joined in the temporary joining stage;
A main joining step of main joining the plurality of substrates transported in the transporting step by a main joining portion provided on each of the plurality of substrates ;
A substrate bonding method comprising:
少なくとも一方の基板上に離間して配された複数の仮接合部によって接合される請求項１または２に記載の基板貼り合わせ方法。 In the temporary joining step,
Substrate bonding if I were method according to claim 1 or 2 are joined by a plurality of temporary bonding portion disposed at a distance from each other in at least one of the substrates.
前記本接合段階では、一の基板に形成された素子と他の基板に形成された素子とを電気的に接続する前記本接合部によって本接合する
請求項１から４のいずれか１項に記載の基板貼り合わせ方法。 In the temporary bonding stage, the plurality of substrates are temporarily bonded by the temporary bonding portion insulated from the elements formed on the substrate,
5. The main bonding step according to claim 1, wherein the main bonding is performed by the main bonding portion that electrically connects an element formed on one substrate and an element formed on another substrate. substrate bonding if I was how.
複数の仮接合部の個数は、前記本接合部の接合強度の高い領域に比べて、前記本接合部の接合強度の低い領域の方が多い
請求項１から５のいずれか１項に記載の基板貼り合わせ方法。 There are a plurality of the temporary joint portions ,
6. The number of the plurality of temporary joint portions is greater in a region having a low joint strength of the main joint portion than in a region having a high joint strength of the main joint portion . substrate bonding if I was way.
請求項１から６のいずれか１項に記載の基板貼り合わせ方法。 The substrate bonding according to any one of claims 1 to 6, wherein in the temporary bonding step, the main bonding portions bonded to each other in the main bonding step are separated in a state where the temporary bonding portions are bonded. It was way.
複数の仮接合部は、前記複数の基板間の距離に合わせて配置される請求項１から７のいずれか１項に記載の基板貼り合わせ方法。 The temporary joint portion is plural,
The plurality of temporary joints, substrate bonding if I were method according to any one of claims 1 to 7 which is aligned with the distance between the plurality of substrates.
請求項１から１１のいずれか１項に記載の基板貼り合わせ方法。 The temporary joint, the temporary joint having a guided portion formed on one substrate, are formed on another substrate, according to claim 1 including the temporary bonding portion having a guide portion for guiding the guided portion substrate bonding if I were method according to any one of 11.
前記複数の基板間に設けられた光硬化樹脂に、前記複数の基板の側面から硬化用の光を照射して、前記光硬化樹脂を硬化させることにより、前記複数の基板を仮接合する請求項１から１３のいずれか１項に記載の基板貼り合わせ方法。 In the temporary joining step,
The light curing resin provided between the plurality of substrates is irradiated with curing light from a side surface of the plurality of substrates to cure the photocurable resin, thereby temporarily joining the plurality of substrates. substrate bonding if I were method according to any one of 1 to 13.
振動部材によって前記仮接合部に超音波振動を付与して、前記複数の基板を仮接合する請求項１から１３のいずれか１項に記載の基板貼り合わせ方法。 In the temporary joining step,
By applying ultrasonic vibration to the temporary bonding portion by the vibration member, substrate bonding if I were method according to the plurality of substrates in any one of claims 1 to 13, temporarily joined.
導電性材料を含む前記仮接合部を加熱して、前記複数の基板を仮接合する請求項１から１３のいずれか１項に記載の基板貼り合わせ方法。 In the temporary joining step,
It said containing a conductive material by heating the temporarily joined section, the substrate bonded if I were method according to any one of claims 1 to 13 for temporarily bonding the plurality of substrates.
前記磁場発生源は、前記基板の側面から前記仮接合部に磁場を付与する請求項２０に記載の基板貼り合わせ方法。 The temporary bonding portion is disposed outside an element formation region of the substrate,
Wherein the magnetic field generation source, the method causes I substrate bonding case according to claim 20 for imparting a magnetic field to the temporary bonding portion from a side surface of the substrate.
前記仮接合部を活性化することにより、前記複数の基板を仮接合する請求項１から１３のいずれか１項に記載の基板貼り合わせ方法。 In the temporary joining step,
The substrate bonding method according to claim 1, wherein the plurality of substrates are temporarily bonded by activating the temporary bonding portion .
各基板から外側に延びる仮接合部を介して、前記複数の基板を仮接合する請求項１から１３のいずれか１項に記載の基板貼り合わせ方法。 In the temporary joining step,
From each substrate through the temporary bonding portion extending outwardly, substrate bonding if I were method according to any one of claims 1 to 13 for temporarily bonding the plurality of substrates.
平面視において、前記第１基板と前記第２基板とを仮接合する第１仮接合部と、前記第２基板と前記第３基板とを仮接合する第２仮接合部とが異なる位置に配置されている請求項２３に記載の基板貼り合わせ方法。 The plurality of substrates include a first substrate, a second substrate, and a third substrate, and in plan view, a first temporary bonding portion that temporarily bonds the first substrate and the second substrate, the second substrate, and the second substrate a second substrate bonded if I were method of claim 23 in which the temporarily joined portion are located at different positions for temporarily bonding the third substrate.
前記仮接合部設置段階は、前記位置合わせ段階の前に実施される請求項２５に記載の基板貼り合わせ方法。 An alignment step of aligning the plurality of substrates;
26. The substrate bonding method according to claim 25 , wherein the provisional bonding portion installation step is performed before the positioning step.
前記仮接合部設置段階は、前記本接合部設置段階の後に実施される請求項２５または２６に記載の基板貼り合わせ方法。 A main joint installation step of providing the main joint on the substrate;
27. The substrate bonding method according to claim 25 or 26 , wherein the temporary bonding portion installation step is performed after the main bonding portion installation step.
前記仮接合段階で仮接合された前記二つの基板を、前記二つの基板にそれぞれ設けられた本接合部を互いに接合することによって本接合する本接合段階と、
を含み、
前記仮接合部によって前記二つの基板が接合された状態では、互いに対応する前記本接合部が互いに離間している基板貼り合わせ方法。 A temporary bonding step of temporarily bonding the two substrates to each other by a temporary bonding portion provided on at least one of the two substrates;
A main joining step of joining the two substrates temporarily joined in the provisional joining step by joining the main joining portions provided on the two substrates to each other;
Including
A substrate bonding method in which, in a state where the two substrates are bonded by the temporary bonding portion, the main bonding portions corresponding to each other are separated from each other .
前記仮接合段階で仮接合された前記二つの基板を、前記二つの基板にそれぞれ設けられた本接合部を互いに接合することによって本接合する本接合段階と、
を含み、
前記本接合段階において、前記仮接合部を圧縮させることにより、互いに対応する前記本接合部を互いに接合する基板貼り合わせ方法。 A temporary bonding step of temporarily bonding the two substrates to each other by a temporary bonding portion provided on at least one of the two substrates;
A main joining step of joining the two substrates temporarily joined in the provisional joining step by joining the main joining portions provided on the two substrates to each other;
Including
In the main bonding step, the substrate bonding method for bonding the main bonding portions corresponding to each other by compressing the temporary bonding portions .
前記仮接合段階で仮接合された前記二つの基板を、前記二つの基板にそれぞれ設けられた本接合部を互いに接合することによって本接合する本接合段階と、A main joining step of joining the two substrates temporarily joined in the provisional joining step by joining the main joining portions provided on the two substrates to each other;
を含み、Including
前記仮接合段階において、前記二つの基板の前記仮接合部を変形させて重ねることにより、前記仮接合部を互いに接合する基板貼り合わせ方法。A substrate bonding method in which, in the temporary bonding step, the temporary bonding portions are bonded to each other by deforming and overlapping the temporary bonding portions of the two substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011132210A JP2013004609A (en) | 2011-06-14 | 2011-06-14 | Substrate bonding method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011132210A JP2013004609A (en) | 2011-06-14 | 2011-06-14 | Substrate bonding method |
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| Publication Number | Publication Date |
|---|---|
| JP2013004609A JP2013004609A (en) | 2013-01-07 |
| JP2013004609A5 true JP2013004609A5 (en) | 2014-08-07 |
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| JP2011132210A Pending JP2013004609A (en) | 2011-06-14 | 2011-06-14 | Substrate bonding method |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9484238B2 (en) | 2013-03-29 | 2016-11-01 | Tokyo Ohka Kogyo Co., Ltd. | Attachment method |
| KR102259484B1 (en) * | 2014-02-03 | 2021-06-02 | 에베 그룹 에. 탈너 게엠베하 | Method and device for bonding substrates |
| KR102152906B1 (en) * | 2018-11-20 | 2020-09-09 | 세메스 주식회사 | Bonding apparatus and bonding method |
| US11495565B2 (en) * | 2018-11-21 | 2022-11-08 | Tohoku-Microtec Co., Ltd. | Stacked semiconductor device and multiple chips used therein |
| WO2021131080A1 (en) * | 2019-12-27 | 2021-07-01 | ボンドテック株式会社 | Joining method, item to be joined, and joining device |
| JP2020145438A (en) * | 2020-04-14 | 2020-09-10 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Method and device for bonding substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1187413A (en) * | 1997-09-08 | 1999-03-30 | Fujitsu Ltd | Semiconductor bare chip mounting method |
| JP2000091174A (en) * | 1998-09-14 | 2000-03-31 | Canon Inc | Method of forming functional bond at bonding region by inter-substrate joint reinforced by application of positive pressure and element structure having functional bond |
| JP2002373914A (en) * | 2001-06-15 | 2002-12-26 | Ricoh Co Ltd | Electronic component connection structure |
| JP2004104102A (en) * | 2002-08-21 | 2004-04-02 | Seiko Epson Corp | Semiconductor device and its manufacturing method, circuit substrate and electronic apparatus |
| JP2006147781A (en) * | 2004-11-18 | 2006-06-08 | Kumamoto Univ | Semiconductor chip, semiconductor device and its manufacturing method |
| JP4845447B2 (en) * | 2005-07-29 | 2011-12-28 | トヨタ自動車株式会社 | Soldering apparatus and method for manufacturing soldered apparatus |
| JP4850029B2 (en) * | 2006-10-31 | 2012-01-11 | セイコーインスツル株式会社 | Semiconductor device |
| JP5256407B2 (en) * | 2008-03-17 | 2013-08-07 | ボンドテック株式会社 | Bonding method, device made by this method, bonding apparatus, and substrate bonded by this method |
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