JP2013002931A - Probe supporting board and manufacturing method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method for probe supporting boards by which insulation between a probe and a probe supporting board can be adequately ensured and be stabilized over time.SOLUTION: A probe supporting board 10 is provided with a layered body formed by stacking and joining to each other a plurality of metal sheets 11 and first and second metal sheets 13 and 14 and an insulating coat 16 that is formed over the upper face of the layered body and electrically insulates a plurality of probes 20 from the layered body. In the second metal sheet 13, out of the plurality of metal sheets 11, 13 and 14, insulative supporting sheets 17 that slidably support lead parts 20C of the probes 20 and have positioning holes 17A for determining the supporting positions for the probes 20 are formed integrally in a plurality of positions; these supporting sheets 17 are held between the first and third metal sheets 11 and 14, with the positioning holes 17A being positioned within a penetrating hole 10A.

Description

  The present invention relates to a probe support substrate constituting a probe card used for electrical characteristic inspection of a semiconductor wafer. More specifically, the present invention relates to a probe support substrate capable of supporting a plurality of probes with high accuracy at preset positions, and It relates to the manufacturing method.

  A probe device is used to inspect the electrical characteristics of the semiconductor wafer. The probe apparatus includes a loader chamber for transferring semiconductor wafers stored in a cassette one by one, a prober chamber for inspecting electrical characteristics of a plurality of devices formed on the semiconductor wafer transferred from the loader chamber, a loader chamber, And a control device for controlling various devices in the prober room.

  For example, as shown in FIG. 6A, the prober chamber is mounted with a mounting table 1 on which a semiconductor wafer W 2 from a loader chamber (not shown) is mounted and moved in the X, Y, Z, and θ directions. In cooperation with the mounting table 1, a probe card 2 having a plurality of probes 2 </ b> A disposed above the mounting table 1 and in electrical contact with a plurality of electrode pads formed on the entire surface of the semiconductor wafer W on the mounting table 1. An alignment mechanism (not shown) that aligns the plurality of probes 2A of the probe card 2 and the plurality of electrode pads of the semiconductor wafer W, and includes all the electrode pads of the semiconductor wafer W after alignment and the probe card 2 All the probes 2A are in contact with each other at a time so as to inspect the electrical characteristics of a plurality of devices formed on the semiconductor wafer W.

  As shown in FIG. 6A, the probe card 2 includes a plurality of probes 2A, a probe support substrate 2B that supports these probes 2A, and a probe support substrate 2B joined together so that the tips of the plurality of probes 2A are connected to each other. Circuit board 2C having a plurality of terminal electrodes that are in electrical contact with each other. The plurality of probes 2 </ b> A and the probe support substrate 2 </ b> B are configured as contactors of the probe card 2. The probe support substrate 2B is formed of an insulating substrate such as ceramic. The plurality of probes 2A pass through the plurality of through holes formed in the probe support substrate 2B and are in contact with the plurality of terminal electrodes formed on the circuit board 2C, respectively.

  Since the through holes of the probe support substrate 2B are formed by machining in accordance with the number of the probes 2A, the number of probes 2A increases as the device is highly integrated and the wafer diameter is increased. This machining requires a lot of time and man-hours, and the manufacturing cost of the probe card 2 increases.

Therefore, Patent Document 1 describes a method of manufacturing the probe support substrate 2B at a low cost. According to the technique described in Patent Document 1, for example, a plurality of through holes that support the probe 2A are formed in the metal thin plate 2B ₁ in advance by etching, and the metal thin plate 2B ₁ in which the plurality of through holes are formed the through holes are laminated plurality to a desired thickness as shown in (b) of FIG. 6 in a state of being aligned, a plurality of thin metal plates 2B ₁ is integrated by a technique such as diffusion bonding, It is manufactured as a single probe support substrate 2B having a plurality of through holes 2E. According to this method, since a plurality of through-holes even more through holes 2E are at the stage of the sheet metal 2B ₁ are collectively formed by etching, the probe support substrate 2B compared to drilling by machining low Can be manufactured at cost. Such a probe support substrate 2B is also described in Patent Document 2. Further, an insulating coating 2F is formed on the inner peripheral surface of the through hole 2E, and the probe 2A and the metal probe support substrate 2B are electrically insulated by the insulating coating 2E. An insulating thin plate 2G is joined to the upper surface of the probe support substrate 2B, and the probe 2A and the probe support substrate 2B are electrically insulated by the insulating thin plate 2G.

WO99 / 004274 JP 2011-043377 A

  However, in the case of the conventional metal probe support substrate 2B shown in FIG. 6B, an insulating coating 2F is applied to the through hole 2E that supports the probe 2A as shown in FIG. 6B. Therefore, there is a possibility that the insulation between the probe 2A and the probe support substrate 2B cannot be sufficiently secured because the insulating coating 2F is peeled off from the through hole 2E with use.

Further, conventional metal probe support substrate 2B is heated a plurality of thin metal plates 2B _1, since the pressurizing is joined, by misalignment between the upper and lower metal sheet 2B ₁ at the time of bonding, as shown in FIG. 7 holes of each metal sheet 2B ₁ is slightly misalignment with each other, the original support position of the probe 2A is not fixed becomes unclear, variation support position of the probe 2A, there is a possibility that impair the reliability of the probe card 2 . As the probe support substrate 2B becomes larger in diameter and the number of through holes 2E increases, the influence of the positional deviation of each thin metal plate 2B becomes more prominent.

  The present invention has been made in order to solve the above-mentioned problems, and can sufficiently secure the insulation between the probe and the probe support substrate and can be stabilized with time, and can further provide a hole for determining the support position of the probe. An object of the present invention is to provide a probe support substrate that can be formed with high accuracy as designed and a method for manufacturing the same.

  The probe support substrate according to claim 1 of the present invention is a probe support substrate having a plurality of through holes that respectively support a plurality of probes used for electrical property inspection of an object to be inspected in a predetermined arrangement pattern. A plurality of metal thin plates, each including a laminate in which thin metal plates are laminated and bonded to each other; and an insulating film formed on a main surface of the laminate to electrically insulate the plurality of probes from the laminate. In at least one of the thin metal plates, an insulating support thin plate having a positioning hole for slidably supporting the probe and determining a support position of the probe is integrally formed at a plurality of locations. In addition, the insulating thin support plate is sandwiched between thin metal plates disposed on both sides thereof, and the positioning hole is located in the through hole. A.

  A probe support substrate according to a second aspect of the present invention is the probe support substrate according to the first aspect, wherein the insulating thin support plate is made of ceramic.

  The probe support substrate according to claim 3 of the present invention is the probe support substrate according to claim 1 or claim 1, wherein the probe includes a portion that passes through the through hole, a portion that is fixed to the metal thin plate, and , Characterized by having.

  According to a fourth aspect of the present invention, there is provided a probe support substrate manufacturing method comprising: a plurality of through holes for supporting a plurality of probes used for inspecting an electrical property of an object to be inspected in a predetermined arrangement pattern; A method of manufacturing a substrate, comprising: a first step of forming a plurality of holes having a diameter larger than that of the probe in a first metal thin plate in accordance with an arrangement pattern of the plurality of probes; A second step of aligning the diameter holes and laminating a plurality of the first metal thin plates to obtain a first laminate, and the plurality of large-diameter holes on the main surface of the first laminate. A third step of laminating a second metal thin plate integrated with a plurality of insulating supporting thin plates each covering the same, and laminating at least one third metal thin plate on the second metal thin plate The first thin metal plate 11 and the above A fourth step of obtaining the second laminate by sandwiching the insulating support thin plate at a portion other than the large-diameter hole with at least one third metal thin plate; and heating the second laminate A fifth step of pressurizing and joining the plurality of first metal thin plates and the second and third metal thin plates to each other, and positioning holes for determining the support positions of the plurality of probes. And a sixth step in which the probe slides at a position where the plurality of large-diameter holes of the insulating thin support plate are closed.

  According to a fifth aspect of the present invention, in the probe support substrate manufacturing method according to the fourth aspect, in the sixth step, the positioning hole is formed in the insulating support thin plate by blasting. It is characterized by this.

  According to a sixth aspect of the present invention, in the method for manufacturing a probe support substrate according to the fourth or fifth aspect, the plurality of large-diameter holes of the first metal thin plate are each formed by etching. It is characterized by doing.

  According to the present invention, the insulation between the probe and the probe support substrate can be sufficiently ensured and stabilized with time, and the hole for determining the probe support position can be formed with high accuracy as designed. It is possible to provide a probe support substrate that can be used and a method for manufacturing the same.

It is sectional drawing which shows the principal part of one Embodiment of the probe support substrate of this invention. (A)-(c) is sectional drawing which shows the process of laminating | stacking the 1st, 2nd metal thin plate prepared previously among the manufacturing methods of the probe support substrate of this embodiment, respectively. (A), (b) is sectional drawing which shows the process of laminating | stacking a 3rd metal thin plate on the upper surface of a 2nd metal thin plate, respectively after the process shown in FIG. (A) to (c) are diffusion holes joined to the laminated body of the first, second, and third metal thin plates following the step shown in FIG. 3, and positioning holes are formed in the insulating support thin plate of the second metal thin plate. It is sectional drawing which shows the process of forming. (A), (b) is sectional drawing which shows the process of laminating | stacking an insulating thin plate on the upper surface of a 3rd metal thin plate, respectively, following the process shown in FIG. (A), (b) shows the conventional probe apparatus, (a) is a side view which shows the principal part of the probe apparatus with which the conventional probe card was attached, (b) is the principal of the conventional probe support substrate. It is sectional drawing which expands and shows a part. It is sectional drawing which expands and shows the position shift between the metal thin plates produced by carrying out the diffusion joining of the metal thin plate shown in FIG.

Hereinafter, the present invention will be described based on the embodiment shown in FIGS.
First, for example, the probe support substrate of this embodiment shown in FIG. 1 will be described. As shown in FIG. 1, the probe support substrate 10 is configured as a contactor substrate that supports a plurality of probes 20 that respectively contact a plurality of electrode pads formed in a predetermined pattern on a semiconductor wafer (not shown). Yes.

  As shown in FIG. 1, the probe support substrate 10 of the present embodiment includes a first laminate 12 formed by laminating a plurality of first metal thin plates 11, and a main surface of the first laminate 12 ( A second laminate 15 in which a third metal thin plate 14 is laminated via a second metal thin plate 13 on the upper surface in FIG. 1, an insulating film 16 formed on the upper surface of the second laminate 15, It has. The first, second, and third metal thin plates 11, 13, and 14 are the same, for example, with a thickness of 0.1 to 0.5 mm, for example, by Ni-Fe alloy such as 42 alloy, Invar, Kovar, or stainless steel. The outer diameter is formed. The second laminated body 15 is formed as a single plate by joining a plurality of first metal thin plates 11 and second and third thin metal plates 13 and 14 to each other by diffusion bonding. The 1st, 2nd, 3rd sheet metal 11, 13, 14 is joined also by joining means other than diffusion joining, for example, means, such as spot welding and an adhesive agent.

  As shown in FIG. 1, a plurality of probes 20 arranged in accordance with the arrangement pattern of a plurality of electrode pads on a semiconductor wafer (not shown) are attached to the main surface (upper surface in FIG. 1) of the probe support substrate 10. It has been. The plurality of probes 20 are all formed of a springy conductive material such as nickel as shown in FIG. As shown in the figure, the probe 20 includes a contact portion 20A that contacts an electrode pad of a semiconductor wafer, a support portion 20B that extends from the base end of the contact portion 20A along the upper surface of the probe support substrate 10, and The lead part 20C hangs down from the support part 20B before the contact part 20A, and a protrusion part 20D formed on the extending end side of the support part 20B. The support part 20B is formed as a thin part from the contact part 20A to the lead part 20C, and is formed as a thick part from the lead part 20C to the extended end.

  In the probe support substrate 10, through holes 10 </ b> A through which the lead portions 20 </ b> C of the plurality of probes 20 respectively penetrate and recessed portions 20 </ b> B into which the projections 20 </ b> D of the plurality of probes 20 are fitted respectively correspond to the arrangement pattern of the plurality of probes 20. Is formed. In the probe 20, the lead portion 20 </ b> C passes through the through-hole 10 </ b> A and contacts the terminal electrode 31 of the circuit board 30, and the protruding portion 20 </ b> D is bonded and fixed to the recessed portion 10 </ b> B via an insulating adhesive. In the probe 20, the thick portion of the support portion 20 </ b> B is in contact with the insulating coating 16, and the thin portion of the support portion 20 </ b> B is levitated from the insulating coating 16. Accordingly, the tip of the contact portion 20A is in electrical contact with the electrode pad of the semiconductor wafer, and the probe 20 is elastically deformed toward the insulating coating 16 via the support portion 20B.

  As shown in FIG. 1, the through hole 10 </ b> A has a hole 11 </ b> A formed in the plurality of first metal thin plates 11 with a diameter larger than that of the lead portion 20 </ b> C of the probe 20 and a diameter of the third metal thin plate 14 larger than that of the lead portion 20. It is formed by the formed hole 14A. In the second metal thin plate 13 interposed between the first and third metal thin plates 11 and 14, as shown in FIG. 1, insulating support thin plates 17 are secondly provided in portions corresponding to the plurality of through holes 10 </ b> A. These are integrated with the thin metal plate 13 and arranged at a plurality of locations. A positioning hole 17A for slidably supporting the lead portion 20C of the probe 20 is formed in the support thin plate 17 so as to be located inside the through hole 10A, and the lead portion 20C is formed in the through hole 10A via the positioning hole 17A. It does not come into contact with the inner peripheral surface. The supporting thin plate 17 is firmly integrated by upper and lower first and third metal thin plates 11 and 14 in which the outside of the positioning hole 17A is joined by diffusion bonding, thermocompression bonding, an adhesive, or the like. Accordingly, the probe 20 supported by the positioning hole 17A of the support thin plate 17 is electrically insulated from the second metal thin plate 13, and the holes 11A, 14A of the first and third metal thin plates 11, 14 are used. The electrical insulation with the probe support substrate 10 is sufficiently secured. Further, since the positioning hole 17A is formed in the insulating support thin plate 17, the insulating property is stable, and the insulating property is not impaired over a long period of time. The insulating support thin plate 17 is formed of an insulating ceramic such as quartz, for example.

  Further, the recessed portion 10 </ b> B is formed by the hole 14 </ b> B of the third metal thin plate 14. The hole 14A is formed in a size that allows the projection 20D of the probe 20 to fit. The probe 20 has a protrusion 20D bonded and fixed to the recess 10B via an adhesive.

  Since the first, second, and third metal thin plates 11, 13, and 14 are joined by the joining means such as diffusion bonding as described above, the first and third metal thin plates 11 and 14 are heated at the time of joining. As a result, the holes 11A and 14A are misaligned as shown in FIG. However, in this embodiment, after the first, second, and third metal thin plates 11, 13, and 14 are diffusion-bonded as will be described later, a plurality of positioning holes 17 </ b> A are provided at a plurality of positions in the second metal thin plate 13. Therefore, the plurality of positioning holes 17A are formed with high precision at the designed support positions, and the plurality of probes 20 are securely attached to the contact positions with the electrode pads of the semiconductor wafer.

  Next, a method for manufacturing the probe support substrate 10 shown in FIG. 1 will be described with reference to FIGS.

  First, in order to produce the first, second, and third thin metal plates 11, 13, and 14 of the probe support substrate 10, for example, a 42 alloy sheet of 0.1 to 0.5 mm, a second thin metal plate 13, An integrated ceramic sheet of 0.1 to 0.5 mm is prepared. The first, second, and third metal thin plates 11, 13, and 14 are cut into a predetermined number from the 42 alloy sheet to a required number as the probe support substrate 1, and are also necessary as the support thin plate 17 from the ceramic sheet. The number of sheets is cut into a predetermined shape.

  Next, as shown in FIG. 1 (a), a plurality of holes 11A through which the lead portion 20C of the probe 20 passes through the first metal thin plate 11 and the first metal thin plate 11 are aligned by wet etching processing of the first metal thin plate 11. A hole 11 </ b> C is formed in the first thin metal plate 11. The alignment holes 11 </ b> C are formed at a plurality of locations at predetermined intervals on the outer peripheral edge of the first thin metal plate 11. In order to form these holes 11A and 11C, a photoresist was applied to both surfaces of the first metal thin plate 11 to form a photoresist film, and this photoresist film was exposed through a predetermined photomask. Thereafter, development is performed to remove portions of the photoresist corresponding to the holes 11A and 11C in a predetermined pattern, and the first metal thin plate 11 is exposed from the photoresist film from portions corresponding to the respective holes 11A and 11C. After the development process, the first metal thin plate 11 is etched from both sides using an etching solution, and a plurality of holes 11A and 11C are formed in a predetermined pattern on the first metal thin plate 11 as shown in FIG. It is formed in a lump. The necessary number of first thin metal plates 11 perforated as described above are produced as the probe support substrate 10.

  Further, as shown in FIG. 2, the second thin metal plate 13 has a hole that is substantially the same size as the hole 11C in a portion corresponding to the hole 11A in a portion corresponding to the hole 13A larger than the hole 11A and a portion corresponding to the hole 11C. 13C are collectively formed by wet etching. Further, as shown in FIG. 3, the third thin metal plate 14 has portions corresponding to the holes 11A and 11C at positions corresponding to the holes 11A and 11C and the holes 14A and 14C and the recessed portions 10B. The holes 14B are collectively formed by wet etching. In FIG. 1, the main part is shown enlarged.

  After a plurality of holes 11A and 11C are formed in a predetermined pattern in the first metal thin plate 11, the necessary number of first metal thin plates 11 are stacked using the stacking jig 50 shown in FIG. Is done. Guide pins 51 corresponding to the plurality of holes 11 </ b> C of the first metal thin plate 11 are erected on the stacking jig 50. A plurality of holes 11 </ b> C of the first metal thin plate 11 are aligned with the guide pins 51, and the first metal thin plate 11 is stacked on the stacking jig 50 to form the first first stacked body 12. Is done. At this time, the plurality of holes 11 </ b> A of the first metal thin plate 11 are automatically aligned via the guide pins 51.

  Next, as shown in FIG. 2B, the second thin metal plate 13 is laminated with the guide pin 51 aligned with the hole 13C of the second thin metal plate 13, and further supported as shown in FIG. When the thin plate 17 is inserted into the hole 13A of the second metal thin plate 13, the support thin plate 17 is integrated with the second metal thin plate 13 as shown in FIG. A third metal thin plate 14 is laminated on the second metal thin plate 13 via a guide pin 51 to form a second laminated body 15 as shown in FIG. In the second laminate 15, the support thin plate 17 is sandwiched between the upper and lower first and third metal thin plates 11, 14, and the through hole 10 A formed by the first and third holes 11 A, 14 A is formed by the support thin plate 17. It is blocked.

  Thereafter, as shown in FIG. 4A, the second laminate 15 from which the lamination jig 50 has been removed is diffusion bonded. In the diffusion bonding, the second laminated body 15 is heated to a predetermined temperature under a vacuum or an inert atmosphere and is pressurized with a predetermined pressure from above and below to form the plurality of first metal thin plates 11 and the second and third layers. The metal thin plates 13 are joined together and integrated as a single plate, and the support thin plate 17 is joined to the upper and lower first and third metal thin plates 11 and 14 and firmly integrated. The first and second metal thin plates 11 and 13 and the support thin plate 17 have a small number of holes 11A and 14A as shown in FIG. Deviation from the original position (design position). However, in the present embodiment, the plurality of holes 11A, 14A of the first and third thin metal plates 11, 14 do not set the support position of the probe 20, but serve as a through hole 10A through which the lead portion 20C passes. Since the diameter of the lead portion 20C is larger than that of the lead portion 20C, the holes 11A and 13A of the first and second metal thin films 11 and 13 are displaced from each other, and the inner surface of the through-hole 10A is not aligned and partially narrowed. The lead portion 20C of the probe 20 can be passed with a margin.

  In the present embodiment, the plurality of positioning holes 17 </ b> A are formed with high accuracy as designed at the support position of the probe 20 by sandblasting the insulating support thin plate 17. In order to perform the sandblasting of the support thin plate 17, first, a mask layer is formed on the support thin plate 17 exposed from the second laminate 14. Thereafter, when the support thin plate 17 is sandblasted in a predetermined pattern through the mask layer, positioning holes 17A are formed in the support thin plate 17 in a predetermined pattern as shown in FIG.

  Next, as shown in FIG. 5A, the insulating coating 16 is formed on the upper surface of the second laminated plate 15, and the probe support substrate 10 having the positioning hole 17A in the through hole 10A is obtained. Then, after filling the hole 13B of the second metal thin plate 13 with the adhesive (the recessed portion 10B of the probe support substrate 10), the lead portion 20C of the probe 20 prepared in advance becomes the second metal thin plate 13. The protrusion 20D is inserted into the positioning hole 13A and fitted into the recessed portion 10B of the probe support substrate 10. Accordingly, the probe 20 has the lead portion 20C penetrating the through hole 10A, and the projection portion 20D is bonded and fixed to the recessed portion 10B via the adhesive as shown by the phantom line in FIG. A contactor (see FIG. 1) supported on the upper surface of the probe support substrate 10 is obtained.

  As described above, according to the present embodiment, the probe support substrate 10 includes the laminated body in which the plurality of first metal thin plates 11 and the first and second metal thin plates 13 and 14 are laminated and bonded to each other. An insulating coating 16 that is formed on the top surface of the laminate and electrically insulates the plurality of probes 20 from the laminate, and the second thin metal plate 13 of the plurality of thin metal plates 11, 13, 14 includes Insulating support thin plates 17 that slidably support the lead portion 20C of the probe 20 and have positioning holes 17A that determine the support position of the probe 20 are integrally formed at a plurality of locations, and these support thin plates 17 is joined to and sandwiched between the first and third thin metal plates 11 and 14 disposed on both sides, and the positioning hole 17A is located in the through hole 10A. Insulation between the blanking supporting substrate 10 can be stable over time together with sufficiently secured, it is possible to obtain a highly reliable probe card.

  Further, according to the present embodiment, the first step of forming a plurality of holes 11A having a diameter larger than the lead portion 20C of the probe 20 in the first metal thin plate 11 in accordance with the arrangement pattern of the plurality of probes 20, A second step of aligning a plurality of corresponding large-diameter holes 11A with each other and laminating a plurality of first metal thin plates 11 to obtain a first laminate 12, and an upper surface of the first laminate 12; A third step of laminating a second metal thin plate 13 having insulating support thin plates 17 that respectively close the plurality of large-diameter holes 11A; and a third metal thin plate laminated on the second metal thin plate 13. A fourth step of obtaining the second laminate 15 by sandwiching the support thin plate 17 between the first metal thin plate 11 and the third metal thin plate 11 at a portion other than the large-diameter hole 11A, and the second laminate 15 The first metal thin plate 11 and the second and third metals are heated and pressurized. The fifth step of joining the plates 13 and 14 to each other, and the positioning holes 17A for determining the support positions of the probes 20 are positions where the plurality of large-diameter holes 11A and 14A of the insulating support thin plates 17 are closed. The sixth step is provided so that the probe 20 slides in the size of the first metal thin plate 11, and the plurality of first metal thin plates 11 and the second and third metal thin plates 13 are integrated by heating and pressing. Positioning that determines the support position of the probe 20 even when there is a positional shift between the plurality of first, second, and third metal thin plates 11, 13, 14 when manufacturing the probe support substrate 10 of the present embodiment. The holes 17A are formed in the insulating support thin plate 17 with high accuracy as designed, and the insulation between the probe 20 and the probe support substrate 10 is sufficiently ensured and the insulation is stabilized over time. A reliable professional It is possible to obtain a card.

  According to the present embodiment, since the positioning hole 17A is formed in the insulating support thin plate 17 by sandblasting in the sixth step, the positioning hole 17A can be formed with higher accuracy. In the first step, holes such as the holes 11A, 13A, and 14A of the first, second, and third metal thin plates 11, 13, and 14 are formed by etching, so that the time and man-hour required for drilling are reduced. This can reduce the manufacturing cost.

  In addition, this invention is not restrict | limited to the said embodiment at all, Each component can be design-changed as needed. For example, the probe 20 has been described as having the contact portion 20A, the support portion 20B, the lead portion 20C, and the protrusion portion 20D. However, any other type of probe may be used as long as it is a probe that penetrates the through hole of the probe support substrate. Also good. Moreover, although the said embodiment demonstrated the case where the positioning hole 17A was provided in the support thin plate 17 by sandblasting, you may use drilling processes, such as a drilling process.

DESCRIPTION OF SYMBOLS 10 Probe support substrate 11 1st metal thin plate 11A Hole 12 1st laminated body 13 2nd metal thin plate 14 3rd metal thin plate 14A hole 15 2nd laminated body 16 Insulating film 17 Insulating support thin plate 17A Positioning hole 20 probes

Claims (6)

  In a probe support substrate having a plurality of through holes for supporting a plurality of probes used for inspecting electrical characteristics of an object to be inspected in a predetermined arrangement pattern, a laminate in which a plurality of thin metal plates are laminated and bonded to each other; An insulating coating that is formed on a main surface of the laminate and electrically insulates the plurality of probes from the laminate, and at least one of the plurality of metal thin plates includes the probe. Are slidably supported, and an insulating support thin plate having a positioning hole for determining a support position of the probe is integrally formed at a plurality of locations, and the insulating support thin plates are disposed on both surfaces thereof. A probe support substrate, wherein the probe support substrate is sandwiched between thin metal plates and the positioning hole is located in the through hole.   2. The probe support substrate according to claim 1, wherein the insulating support thin plate is made of ceramic.   The probe support substrate according to claim 1, wherein the probe includes a portion that passes through the through hole and a portion that is fixed to the metal thin plate.   A method of manufacturing a probe support substrate having a plurality of through holes for supporting a plurality of probes used for electrical property inspection of an object to be inspected in a predetermined arrangement pattern, wherein the first metal thin plate is larger than the probe. A first step of forming a plurality of holes having a diameter in accordance with the arrangement pattern of the plurality of probes, and a plurality of the first metal thin plates are laminated by aligning the plurality of large diameter holes corresponding to each other. The second step of obtaining the first laminate, and the insulating support thin plates that respectively close the plurality of large-diameter holes on the main surface of the first laminate are arranged at a plurality of locations and integrated. A third step of laminating the two metal thin plates, and laminating at least one third metal thin plate on the second metal thin plate to laminate the first metal thin plate 11 and the at least one third metal. The thin plate and the part other than the large-diameter hole A fourth step of obtaining a second laminated body with an edge supporting thin plate sandwiched therebetween, and heating and pressurizing the second laminated body to form the plurality of first metal thin plates and the second and third metals. The fifth step of joining the thin plates to each other and the positioning holes for determining the support positions of the plurality of probes are slid at positions where the plurality of large-diameter holes of the insulating support thin plates are closed. And a sixth step of providing the probe support substrate in a size that satisfies the above.   5. The method for manufacturing a probe support substrate according to claim 4, wherein in the sixth step, the positioning hole is formed in the insulating support thin plate by blasting. 6. The method for manufacturing a probe support substrate according to claim 4, wherein the plurality of large-diameter holes of the first metal thin plate are each formed by an etching process.

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