JP2013000744A - Lead-free solder alloy, and soldered joint using the same - Google Patents
Lead-free solder alloy, and soldered joint using the same Download PDFInfo
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本発明は、Ｓｎ、Ｂｉ、及びＮｉを基本組成とする鉛フリーはんだ合金に関し、はんだ接合部及び／又ははんだ接合界面においてＮｉＡｓ型結晶構造を有する金属間化合物を形成することを特徴とする鉛フリーはんだ合金及び当該鉛フリーはんだ合金を用いたはんだ接合に関する。 The present invention relates to a lead-free solder alloy having a basic composition of Sn, Bi, and Ni, and forms an intermetallic compound having a NiAs-type crystal structure at a solder joint and / or a solder joint interface. The present invention relates to a solder alloy and a solder joint using the lead-free solder alloy.
従来、Ｓｎ-Ｐｂ共晶はんだが電子部品の接合材料として広く用いられてきた。しかし、近年、鉛の人体及び環境への影響が問題視されるようになり、鉛を配合しない鉛フリーはんだ接合材料の開発が進み、広く実用化されている。
例えば、Ｓｎ-Ａｇ-Ｃｕ系はんだ合金やＳｎ-Ｃｕ-Ｎｉ系はんだ合金が広く用いられている。
しかし、Ｓｎ-Ａｇ-Ｃｕ系はんだ合金及びＳｎ-Ｃｕ-Ｎｉ系はんだ合金の融点は、それぞれ２１７℃〜２２１℃と２２７℃になっており、Ｓｎ-Ｐｂ共晶はんだ合金の融点１８３℃に比べ高温である。そのため、低耐熱性電子部品等の実装には使用することが困難であった。
Conventionally, Sn—Pb eutectic solder has been widely used as a bonding material for electronic components. However, in recent years, the influence of lead on the human body and the environment has become a problem, and the development of lead-free solder joint materials that do not contain lead has progressed and has been widely put into practical use.
For example, Sn—Ag—Cu solder alloys and Sn—Cu—Ni solder alloys are widely used.
However, the melting points of Sn—Ag—Cu solder alloy and Sn—Cu—Ni solder alloy are 217 ° C. to 221 ° C. and 227 ° C., respectively, compared to the melting point of Sn—Pb eutectic solder alloy 183 ° C. It is hot. Therefore, it has been difficult to use for mounting low heat resistant electronic components.
そこで、比較的融点の低いＳｎ-Ｚｎ系はんだ合金やＳｎ-Ｐｂ共晶はんだ合金の融点よりも低温のＳｎ-Ｂｉ系はんだ合金、そして、Ｓｎ-Ａｇ-Ｃｕ系はんだ合金にＩｎやＢｉを添加して融点を下げた鉛フリーはんだ合金の提案がなされ、実用化も進んでいる。
しかし、Ｓｎ-Ｚｎ系はんだ合金は腐食等の信頼性に、Ｓｎ-Ｂｉ系はんだ合金は接合強度に、そして、Ｓｎ-Ａｇ-Ｃｕ系はんだ合金にＩｎやＢｉを添加して融点を下げた鉛フリーはんだ合金の場合は、高価なＩｎの添加によるコスト面での問題点、更にＢｉ添加の場合は機械的特性の劣化等の問題がそれぞれ存在している。
Therefore, In and Bi are added to Sn—Bi solder alloys having a lower melting point than those of Sn—Zn solder alloys and Sn—Pb eutectic solder alloys, and Sn—Ag—Cu solder alloys. Thus, a lead-free solder alloy with a lower melting point has been proposed and is in practical use.
However, Sn-Zn solder alloys are reliable in terms of corrosion, Sn-Bi solder alloys are joint strength, and Sn-Ag-Cu solder alloys are added with In or Bi to lower the melting point. In the case of a free solder alloy, there are problems in terms of cost due to the addition of expensive In, and in the case of addition of Bi, there are problems such as deterioration of mechanical properties.
上記の問題を解決すべく、本発明者は特許文献１においてＩｎを必須成分とし、それにＣｕ及びＮｉ、又はＣｕ、Ｎｉ及びＳｎを添加した鉛フリーはんだ合金を用い、且つ、はんだ接合部及び／又ははんだ接合界面にＮｉＡｓ型結晶構造を有する金属間化合物を形成させることにより、信頼性等の高い鉛フリーはんだ合金とそれを用いたはんだ接合を提案している。 In order to solve the above problem, the present inventor uses lead-free solder alloy containing In as an essential component and Cu and Ni or Cu, Ni and Sn added thereto in Patent Document 1, and solder joints and / or Alternatively, a lead-free solder alloy having high reliability and the like and a solder joint using the same are proposed by forming an intermetallic compound having a NiAs type crystal structure at the solder joint interface.
しかし、上記提案はＩｎを含有するため、コスト面での課題を残していることも事実であり、より低コストで高信頼性を有し、しかも、Ｓｎ-Ｐｂ共晶はんだ合金よりも融点の低い鉛フリーはんだ合金が求められている。 However, since the above proposal contains In, it is also a fact that there remains a problem in terms of cost, which has lower reliability at a lower cost, and has a melting point higher than that of the Sn—Pb eutectic solder alloy. There is a need for low lead-free solder alloys.
本発明は、低耐熱性電子部品等の実装に適した、高い接合信頼性を有する鉛フリーはんだ及びはんだ接合を低コストで提供することを目的とする。 An object of the present invention is to provide a lead-free solder and solder joint having high joint reliability suitable for mounting a low heat-resistant electronic component and the like at a low cost.
本発明者は、上記目的を達成すべく、鉛フリーはんだ合金組成及び金属間化合物に着目して鋭意検討を重ねた結果、Ｓｎ-Ｂｉ-Ｎｉを基本組成とする鉛フリーはんだ合金を用いることにより、はんだ接合部及び／又ははんだ接合界面において、Ｂｉ-Ｎｉ及びＮｉ-Ｓｎ金属間においてＮｉＡｓ型結晶構造に代表される六方最密充填構造（稠密六方格子）を有する金属間化合物を形成すること、そして、Ｓｎ-Ｂｉ-Ｎｉを基本組成とする鉛フリーはんだ合金にＣｕを添加したＳｎ-Ｂｉ-Ｃｕ-Ｎｉを基本組成とする鉛フリーはんだ合金を用いたはんだ接合部及び／又ははんだ接合界面においてもＮｉＡｓ型結晶構造を有する金属間化合物を形成させることを見出し、本発明を完成するに至った。 In order to achieve the above object, the present inventor has made extensive studies focusing on the lead-free solder alloy composition and intermetallic compounds, and as a result, by using a lead-free solder alloy based on Sn—Bi—Ni. Forming an intermetallic compound having a hexagonal close-packed structure (dense hexagonal lattice) typified by a NiAs-type crystal structure between Bi—Ni and Ni—Sn metals at the solder joint and / or the solder joint interface; And at the solder joint and / or the solder joint interface using the lead-free solder alloy having the basic composition of Sn-Bi-Cu-Ni in which Cu is added to the lead-free solder alloy having the basic composition of Sn-Bi-Ni Has also found that an intermetallic compound having a NiAs type crystal structure is formed, and the present invention has been completed.
すなわち本発明は、Ｓｎ-Ｂｉ-Ｎｉを基本組成とし、Ｓｎ-Ｂｉの共晶組成に一定量のＮｉ及び／又はＣｕを添加させることによって、はんだ接合部及び／又ははんだ接合界面にＮｉＢｉ、Ｎｉ3Ｓｎ2、及びＣｕ6Ｓｎ5のようなＮｉＡｓ型結晶構造に代表される六方最密充填構造を有する金属間化合物を生成させ、それらの金属間化合物をはんだ接合部及び／又ははんだ接合界面に形成させることによって、接合強度及び信頼性の高いはんだ接合を可能とした。 That is, the present invention uses Sn—Bi—Ni as a basic composition, and by adding a certain amount of Ni and / or Cu to the eutectic composition of Sn—Bi, NiBi, Ni at the solder joint and / or the solder joint interface. An intermetallic compound having a hexagonal close-packed structure typified by a NiAs type crystal structure such as 3 Sn 2 and Cu 6 Sn 5 is generated, and the intermetallic compound is formed at a solder joint and / or a solder joint interface. By forming it, solder joints with high joint strength and reliability were made possible.
本発明は、融点の低い鉛フリーはんだ合金であるため、低耐熱性電子部品のはんだ接合や高密度はんだ実装が可能となるばかりでなく、はんだ接合部の強度が高く、信頼性にも優れているため、また、従来のＩｎ配合鉛フリーはんだ合金に比べコストも安価であることから、広く電子部品のはんだ接合に応用が可能となる。 Since the present invention is a lead-free solder alloy with a low melting point, not only can solder bonding and high-density solder mounting of low heat-resistant electronic components be possible, but also the strength of the solder joints is high and the reliability is excellent. Therefore, since the cost is lower than that of conventional In-containing lead-free solder alloys, it can be widely applied to solder joining of electronic components.
以下に、本発明について詳細に説明する。
従来、はんだ接合部やはんだ接合界面に金属間化合物が形成されることは知られており、その際、生成される金属間化合物の組成は、使用するはんだ合金の組成や母材等により異なる。例えば、電子部品を銅配線を施したプリント基板にＳｎを主成分とする鉛フリーはんだ合金を用いてはんだ接合を行った場合、接合母材であるプリント基板の銅配線部とはんだの接合界面にＣｕ6Ｓｎ5等の金属間化合物が生成し、金属間化合物層が形成される。
これは、プリント基板の母材組成であるＣｕに鉛フリーはんだ合金の組成であるＳｎ等が接触し、濡れが生じ、はんだ相にＣｕが拡散する際、はんだ接合界面に金属間化合物の組成である例えばＣｕの濃化現象が発生し、Ｃｕ6Ｓｎ5金属間化合物が生成し、接合界面に当該金属間化合物の層を形成すると考えられている。
また、プリント基板の母材組成にＣｕが存在しない場合であっても、本発明の鉛フリーはんだ合金を用いることによって、はんだ接合界面に母材にＣｕが存在するのと同様のＣｕ6Ｓｎ5組成等の金属間化合物層が形成すると考えられている。
The present invention is described in detail below.
Conventionally, it is known that an intermetallic compound is formed at a solder joint or a solder joint interface. At this time, the composition of the intermetallic compound produced varies depending on the composition of the solder alloy used, the base material, and the like. For example, when solder bonding is performed using a lead-free solder alloy containing Sn as a main component on a printed circuit board on which copper wiring is applied to an electronic component, the copper wiring portion of the printed circuit board, which is a bonding base material, and the solder bonding interface An intermetallic compound such as Cu 6 Sn 5 is generated, and an intermetallic compound layer is formed.
This is due to the composition of the intermetallic compound at the solder joint interface when Cu, which is the base material composition of the printed circuit board, comes into contact with Sn, which is the composition of the lead-free solder alloy, and wets and Cu diffuses into the solder phase. For example, it is considered that a concentration phenomenon of Cu occurs, for example, and a Cu 6 Sn 5 intermetallic compound is generated, and a layer of the intermetallic compound is formed at the bonding interface.
Further, even when Cu is not present in the base material composition of the printed circuit board, the same Cu 6 Sn 5 as Cu is present in the base material at the solder joint interface by using the lead-free solder alloy of the present invention. It is considered that an intermetallic compound layer such as a composition is formed.
このように、はんだ接合部及び／又ははんだ接合界面にＣｕ６Ｓｎ５金属間化合物が生成すると、接合界面に当該金属間化合物の層を形成し、接合強度が向上することが知られている。そして、このＣｕ6Ｓｎ5金属間化合物の結晶構造が金属間化合物の結晶構造がＮｉＡｓ型に代表される六方最密充填構造であり、当該結晶構造を有する金属間化合物をはんだ接合部及び／又ははんだ接合界面に有することが重要である。
また、本発明者が特許文献２にて提案した鉛フリーはんだ合金もＮｉＡｓ型に近い結晶構造を有する金属間化合物組成である（Ｃｕ，Ｎｉ）6Ｓｎ5を接合界面に形成させることによって、はんだ接合界面に発生するクラックを抑制する効果を有していることも述べられている。
As described above, it is known that when a Cu 6 Sn 5 intermetallic compound is generated at a solder joint and / or a solder joint interface, a layer of the intermetallic compound is formed at the joint interface and the joint strength is improved. The crystal structure of the Cu 6 Sn 5 intermetallic compound is a hexagonal close-packed structure in which the crystal structure of the intermetallic compound is represented by the NiAs type, and the intermetallic compound having the crystal structure is bonded to the solder joint and / or It is important to have at the solder joint interface.
The lead-free solder alloy proposed by the present inventor in Patent Document 2 is also formed by forming (Cu, Ni) 6 Sn 5 having an intermetallic compound composition having a crystal structure close to the NiAs type at the bonding interface. It is also described that it has an effect of suppressing cracks generated at the joint interface.
本発明は、係る条件を満たすＮｉＡｓ型結晶構造に代表される六方最密充填構造を有する金属間化合物の生成に着目し、且つ、低コストで低融点を実現させるために、Ｓｎ-Ｂｉ共晶を基に種々の元素と配合量を検討した結果、Ｎｉを特定量添加したＳｎ-Ｂｉ-Ｎｉと、更に当該組成にＣｕを添加したＳｎ-Ｂｉ-Ｎｉ-Ｃｕを基本組成とする鉛フリーはんだ合金を選択することにより、低耐温性電子部品等の接合が可能な温度域においても、高信頼性と優れた電気特性効果を有するはんだ接合を可能としたのである。 The present invention focuses on the generation of intermetallic compounds having a hexagonal close-packed structure represented by NiAs type crystal structures that satisfy such conditions, and in order to realize a low melting point at low cost, Sn—Bi eutectic As a result of studying various elements and blending amounts based on the above, lead-free solder having a basic composition of Sn-Bi-Ni with a specific amount of Ni added and Sn-Bi-Ni-Cu with further addition of Cu to the composition By selecting an alloy, solder bonding having high reliability and excellent electrical property effect is made possible even in a temperature range where low temperature resistant electronic components can be joined.
本発明のＳｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｎｉ-Ｃｕを基本組成とする鉛フリーはんだ合金の各組成の配合量は、本発明の効果を有する範囲において特に制限はないが、Ｓｎ-Ｂｉの比率において、Ｂｉの配合量が２３〜６３ａｔｍ％の範囲であれは融点が１８５℃以下となるため好ましく、更に、ＳｎとＢｉが共晶関係付近であればより好ましい。例えば、ＳｎとＢｉの比率では、Ｓｎが５７ａｔｍ％、Ｂｉが４３ａｔｍ％付近の共晶域が例示できる。
そして、Ｎｉ及び／又はＣｕの配合量に関して、はんだ接合において結晶構造が六方最密充填構造を有する金属間化合物を生成する配合量であれば特に制限はないが、はんだ合金の融点を考慮すると、Ｎｉの場合、０．００１〜１．０重量％が好ましく、更に０．０１〜０．１重量％がより好ましい。そして、Ｃｕの場合、０．０１〜２．０重量％が好ましく、更に０．１〜１．０重量％がより好ましい。
また、本発明のＳｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｎｉ-Ｃｕを基本組成とする鉛フリーはんだ合金に本発明の効果を損なわない範囲において、Ｓｅ、Ｔｅ、Ｓｂ、Ｓｉ、Ａｇ、Ｚｎ、Ｇｅ、Ｇａ、Ｐ、Ｓｉ、Ａｌ等の元素の１種又は２種以上を任意に添加しても構わない。その際の添加量も、本発明の効果を損なわない範囲において特に制限はない。
更に、上記の添加元素の中でも、Ｇｅ、Ｇａ、及びＰは、酸化防止効果を有するため、Ｓｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｃｕ-Ｎｉを基本組成とする鉛フリーはんだ合金中に０．００１〜１．０重量％を添加することにより、はんだ接合の信頼性が著しく向上する。
The blending amount of each composition of the lead-free solder alloy having the basic composition of Sn-Bi-Ni and Sn-Bi-Ni-Cu of the present invention is not particularly limited as long as it has the effects of the present invention, but Sn-Bi In this ratio, when the Bi content is in the range of 23 to 63 atm%, the melting point is preferably 185 ° C. or lower, and more preferably, Sn and Bi are in the vicinity of the eutectic relationship. For example, in the ratio of Sn and Bi, eutectic regions in which Sn is around 57 atm% and Bi is around 43 atm% can be exemplified.
And regarding the blending amount of Ni and / or Cu, there is no particular limitation as long as it is a blending amount that generates an intermetallic compound having a hexagonal close-packed structure in the solder joint, but considering the melting point of the solder alloy, In the case of Ni, 0.001 to 1.0% by weight is preferable, and 0.01 to 0.1% by weight is more preferable. And in the case of Cu, 0.01 to 2.0 weight% is preferable and 0.1 to 1.0 weight% is still more preferable.
In addition, Se, Te, Sb, Si, Ag, Zn, a lead-free solder alloy having a basic composition of Sn-Bi-Ni and Sn-Bi-Ni-Cu of the present invention, within a range not impairing the effects of the present invention. One or more elements such as Ge, Ga, P, Si, and Al may be arbitrarily added. The addition amount in that case is not particularly limited as long as the effects of the present invention are not impaired.
Further, among the above additive elements, Ge, Ga, and P have an antioxidation effect, and therefore, in a lead-free solder alloy having a basic composition of Sn—Bi—Ni and Sn—Bi—Cu—Ni, a content of 0. By adding 001 to 1.0% by weight, the reliability of solder joint is remarkably improved.
本発明の、Ｓｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｃｕ-Ｎｉを基本組成とする鉛フリーはんだ合金を用いたはんだ接合部及び／又ははんだ接合界面に結晶構造が六方最密充填構造を有する金属間化合物を生成することについて状態図を用いて説明する。
図１は、六方最密充填構造の代表的な結晶構造であるＮｉＡｓ型結晶構造のモデル図であり、本発明のＳｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｃｕ-Ｎｉを基本組成とする鉛フリーはんだ合金を用いたはんだ接合部及び／又ははんだ接合界面には、図１に示す結晶構造を有する金属間化合物が形成されていると考えられる。
Metal having crystal structure of hexagonal close-packed structure at solder joint and / or solder joint interface using lead-free solder alloy having basic composition of Sn-Bi-Ni and Sn-Bi-Cu-Ni of the present invention Generation of an intercalation compound will be described using a state diagram.
FIG. 1 is a model diagram of a NiAs type crystal structure, which is a typical crystal structure of a hexagonal close-packed structure, and is lead-free with Sn—Bi—Ni and Sn—Bi—Cu—Ni of the present invention as a basic composition. It is considered that an intermetallic compound having a crystal structure shown in FIG. 1 is formed at a solder joint using a solder alloy and / or a solder joint interface.
図２は、Ｃｕ-Ｓｎの状態図であるが、当該状態図より、Ｓｎの配合量が４４ａｔｍ％付近において、η域が出現しＮｉＡｓ型結晶構造を示すＣｕ6Ｓｎ5化合物組成がみられる。 FIG. 2 is a phase diagram of Cu—Sn. From the phase diagram, a Cu 6 Sn 5 compound composition showing a NiAs-type crystal structure appears in the η region when the Sn content is around 44 atm%.
図３は、Ｂｉ-Ｎｉの状態図であるが、当該状態図より、Ｂｉの配合量が４５〜４９ａｔｍ％付近において、ＮｉＡｓ型結晶構造を示すＮｉＢｉ化合物組成がみられる。 FIG. 3 is a phase diagram of Bi—Ni. From the phase diagram, a NiBi compound composition showing a NiAs type crystal structure is observed when the amount of Bi is around 45 to 49 atm%.
図４は、Ｎｉ-Ｓｎの状態図であるが、当該状態図より、Ｓｎの配合量が３９〜４３ａｔｍ％において、ＮｉＡｓ型結晶構造を示すＮｉ3Ｓｎ2合物組成がみられる。 FIG. 4 is a phase diagram of Ni—Sn. From the phase diagram, a Ni 3 Sn 2 compound composition showing a NiAs-type crystal structure is observed when the Sn content is 39 to 43 atm%.
図５は、Ｂｉ-Ｃｕの状態図であるが、当該状態図より、金属間化合物の形成は見られない。 FIG. 5 is a phase diagram of Bi—Cu, but no intermetallic compound is formed from the phase diagram.
図６は、Ｂｉ-Ｓｎの状態図であるが、当該状態図より、金属間化合物の形成はみられない。また、Ｂｉが４３ａｔｍ％付近で共晶がみられる。 FIG. 6 is a phase diagram of Bi—Sn, but no intermetallic compound is formed from the phase diagram. Further, eutectic is observed when Bi is around 43 atm%.
図７は、Ｃｕ-Ｎｉの状態図であるが、当該状態図より、ＣｕとＮｉが全固溶の関係にあることがわかる。 FIG. 7 is a Cu—Ni phase diagram. From this phase diagram, it can be seen that Cu and Ni are in a solid solution relationship.
図２〜図４の状態図により、Ｓｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｃｕ-Ｎｉを基本組成とする鉛フリーはんだ合金が、ＮｉＡｓ型結晶構造を有する化合物のＮｉＢｉ、Ｎｉ3Ｓｎ2及びＣｕ6Ｓｎ5を形成する配合域を有することがわかる。
また、図５〜図７の状態図より、ＢｉとＣｕは金属間化合物の生成はなく、ＳｎとＢｉは共晶関係にあり、ＣｕとＮｉは全固溶の関係にあることがわかる。
2 to 4, the lead-free solder alloy having a basic composition of Sn—Bi—Ni and Sn—Bi—Cu—Ni is composed of NiBi, Ni 3 Sn 2 and Cu of compounds having a NiAs type crystal structure. It can be seen that it has a blending zone that forms 6 Sn 5 .
5 to 7, it can be seen that Bi and Cu do not produce intermetallic compounds, Sn and Bi are in a eutectic relationship, and Cu and Ni are in a completely solid solution relationship.
以上の状態図より、本発明のＳｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｃｕ-Ｎｉを基本組成とする鉛フリーはんだ合金を用いてはんだ接合を行った場合、はんだ接合部及び／又ははんだ接合界面にはＮｉＢｉ、Ｎｉ3Ｓｎ2及びＣｕ6Ｓｎ5といったＮｉＡｓ型結晶構造を有する金属間化合物を形成することが予測され、本発明の効果を有すると考えられる。 From the above phase diagram, when solder bonding is performed using a lead-free solder alloy having the basic composition of Sn-Bi-Ni and Sn-Bi-Cu-Ni of the present invention, the solder joint and / or the solder joint interface Is expected to form an intermetallic compound having a NiAs type crystal structure such as NiBi, Ni 3 Sn 2 and Cu 6 Sn 5 , and is considered to have the effect of the present invention.
更に、本発明のＳｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｃｕ-Ｎｉを基本組成とする鉛フリーはんだ合金に、Ｇｅ、Ｇａ、及びＰから選択される１種又は２種以上を０．００１〜１．０重量％添加することにより、はんだ合金溶融中やはんだ接合部の酸化を抑制して、高い信頼性を有するはんだ接合が可能となる。 Furthermore, in the lead-free solder alloy having the basic composition of Sn—Bi—Ni and Sn—Bi—Cu—Ni of the present invention, one or more selected from Ge, Ga, and P is added in 0.001 to 0.001. By adding 1.0% by weight, it is possible to suppress solder oxidation during melting of the solder alloy and solder joints and to perform solder joining with high reliability.
本発明のＳｎ-Ｂｉ-Ｎｉ及びＳｎ-Ｂｉ-Ｃｕ-Ｎｉを基本組成とする鉛フリーはんだ合金は、融点がＳｎ-Ｐｂ共晶はんだ合金と比較して、低融点に調整することが可能であるため、高い信頼性を有するはんだ接合が低耐熱性電子部品に対して可能となることに加え、従来のＩｎ配合の鉛フリーはんだ合金に比較して安価であるため、高密度化、微細化を必要とする電子部品等の製造、実装に広く応用が可能である。
The lead-free solder alloy based on Sn-Bi-Ni and Sn-Bi-Cu-Ni of the present invention can be adjusted to have a lower melting point than that of the Sn-Pb eutectic solder alloy. Therefore, high-reliability solder joints are possible for low-heat-resistant electronic components, and it is less expensive than conventional In-containing lead-free solder alloys. It can be widely applied to the manufacture and mounting of electronic parts and the like that require this.
Claims (7)
A lead-free solder alloy according to any one of claims 1 to 6, wherein 0.001 to 1.0 wt% of one or more selected from Ge, Ga, and P is added. Solder joint using solder alloy and lead-free solder alloy.
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| JP2011130449A JP2013000744A (en) | 2011-06-10 | 2011-06-10 | Lead-free solder alloy, and soldered joint using the same |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2011130449A JP2013000744A (en) | 2011-06-10 | 2011-06-10 | Lead-free solder alloy, and soldered joint using the same |
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| JP2013000744A true JP2013000744A (en) | 2013-01-07 |
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| JP5578301B1 (en) * | 2013-04-18 | 2014-08-27 | 千住金属工業株式会社 | Lead-free solder alloy |
| WO2014192521A1 (en) * | 2013-05-29 | 2014-12-04 | 新日鉄住金マテリアルズ株式会社 | Solder ball and electronic member |
| US20150037087A1 (en) * | 2013-08-05 | 2015-02-05 | Senju Metal Industry Co., Ltd. | Lead-Free Solder Alloy |
| JP2015062933A (en) * | 2013-09-25 | 2015-04-09 | 日立金属株式会社 | Lead-free solder alloy, bonding material, and bonded element |
| WO2015166945A1 (en) * | 2014-04-30 | 2015-11-05 | 株式会社日本スペリア社 | Lead-free solder alloy |
| EP3292943A1 (en) | 2016-09-12 | 2018-03-14 | Interflux Electronics N.V. | Lead-free solder alloy comprising sn, bi and at least one of p, mn, cu, zn, sb and its use for soldering an electronic component to a substrate |
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| US11813686B2 (en) | 2019-05-27 | 2023-11-14 | Senju Metal Industry Co., Ltd. | Solder alloy, solder paste, solder ball, solder preform, solder joint, and substrate |
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