JP2012517023A5 - - Google Patents

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JP2012517023A5
JP2012517023A5 JP2011546799A JP2011546799A JP2012517023A5 JP 2012517023 A5 JP2012517023 A5 JP 2012517023A5 JP 2011546799 A JP2011546799 A JP 2011546799A JP 2011546799 A JP2011546799 A JP 2011546799A JP 2012517023 A5 JP2012517023 A5 JP 2012517023A5
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JP
Japan
Prior art keywords
polymer
optical waveguide
core layer
cladding
refractive index
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JP2011546799A
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English (en)
Japanese (ja)
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JP5737722B2 (ja
JP2012517023A (ja
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Priority claimed from EP09151982A external-priority patent/EP2214049B1/en
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Publication of JP2012517023A publication Critical patent/JP2012517023A/ja
Publication of JP2012517023A5 publication Critical patent/JP2012517023A5/ja
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Publication of JP5737722B2 publication Critical patent/JP5737722B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011546799A 2009-02-03 2010-01-22 積分光学導波路型干渉計 Expired - Fee Related JP5737722B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09151982.7 2009-02-03
EP09151982A EP2214049B1 (en) 2009-02-03 2009-02-03 Integrated optical waveguide interferometric sensor
PCT/EP2010/050743 WO2010089209A1 (en) 2009-02-03 2010-01-22 Integrated optical waveguide interferometric sensor

Publications (3)

Publication Number Publication Date
JP2012517023A JP2012517023A (ja) 2012-07-26
JP2012517023A5 true JP2012517023A5 (https=) 2015-01-22
JP5737722B2 JP5737722B2 (ja) 2015-06-17

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JP2011546799A Expired - Fee Related JP5737722B2 (ja) 2009-02-03 2010-01-22 積分光学導波路型干渉計

Country Status (10)

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US (1) US9151968B2 (https=)
EP (1) EP2214049B1 (https=)
JP (1) JP5737722B2 (https=)
CN (1) CN102292665B (https=)
AT (1) ATE536565T1 (https=)
DK (1) DK2214049T3 (https=)
ES (1) ES2373848T3 (https=)
PL (1) PL2214049T3 (https=)
SG (1) SG173446A1 (https=)
WO (1) WO2010089209A1 (https=)

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WO2020039436A1 (en) * 2018-08-20 2020-02-27 Technion Research & Development Foundation Limited Polymer-coated high-index waveguide for acoustic sensing
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US11500151B2 (en) * 2021-02-22 2022-11-15 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and method of making
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