JP2012509986A - 有機電子装置の調製方法 - Google Patents
有機電子装置の調製方法 Download PDFInfo
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Abstract
【解決手段】本発明は、有機電子装置またはそれらの構成要素の調製における閉磁界非平衡マグネトロンスパッタイオンプレーティング法の使用と、そのような方法によって得ることができる有機電子装置またはそれらの構成要素とに関する。
【選択図】なし
Description
用語「薄膜」は、数nm〜数μmの範囲内で、電子または電気光学的装置の機能層の場合、通常、1nm〜2μm、好ましくは10nm〜1μmの範囲内の厚みを有するフィルムを意味する。
本発明は、閉磁界非平衡マグネトロンスパッタイオンプレーティング(CFUBMSIP:closed field unbalanced magnetron sputter ion plating)の新規な使用を提供する。本発明においては、例えば、有機層、フィルムまたは基板上に電極層を提供する場合、有機層の電子的特性に対して最小限の損傷か損傷なく、有機材料の最表面上に金属および他の導電性材料をスパッタするために、CFUBMSIPを使用する。
CFUBMSIP技術は、Teer Coatings社(英国)によって開発された。それは、隣接するマグネトロンが反対の磁気極性である配置でスパッタされるべき基板を取り囲む非平衡マグネトロンを利用する。それによって、基板が置かれている堆積ゾーンが連結磁力線によって取り囲まれ、閉磁界の磁気系が形成される。結果として、プラズマ領域が閉じ込められ、イオン電流密度が増加し、イオン化電子の喪失が防がれて、プラズマが著しく増強される結果となる。
CFUBMSIP法は、有機トランジスタ(OTFTまたはOFET)などの有機電子装置において、例えば、電極などの機能性導電層を提供するのに特に適している。例えば、CFUBMSIP法を使用してソースおよびドレイン(S/D)電極を提供すると、従来のマグネトロンスパッタリングイオンプレーティング(MSIP:magnetron sputtering ion plating)の使用と比較して、更に、プラズマ出力が低減されたMSIP法の使用とすら比較しても、著しく良好な性能のOFETを得ることができる。
−任意の構成要素として、基板(1)、
−ゲート電極(2)、
−ゲート絶縁体としての有機誘電体層(3)、
−ソースおよびドレイン(S/D)電極(4)、
−有機半導体層(5)、
−任意の構成要素として、半導体層(5)およびソースおよびドレイン電極(4)の最表面上の保護層(示していない)。
本明細書において用いられる材料の規準性能を確立するために、BG FETを以下の通り調製する。
シャドーマスクを通して、数ミクロンの領域におけるチャネル長を有するトランジスタのために要求される解像度でスパッタすることは不可能である。この問題点を克服するために、本例においては、有機材料の最表面上に完全金属層を堆積し、次いで、標準的なフォトリソグラフィー技術を使用して構造化し、S/D電極を形成する。
有機誘電体に対する損傷を低減する1つの方法として、金属をスパッタリングするために低エネルギーのプロセスを使用できる可能性がある。これは、標準的な設備を使用する場合でもなお、スパッタリングに都合のよい方法であろう。その可能性を試験するために、以下の手順を使用してトランジスタを調製する。
CFUBMSIPスパッタリング技術を使用して、プラズマが試料より離れて閉じ込められているため、有機誘電体の表面が損傷を受けないことを示すことができる。この技術の利点を証明するために、以下の通りトランジスタを調製する。
これは、また、従来のMSIP法と比較して、比較例3において使用される通りの低減されたプラズマ出力を用いた場合であっても、CFUBMSIP法が利点を提供することも示している。
ガラス製基板Eagle Glass1737(登録商標)を、Decon90(登録商標)の3%溶液中において65℃で30分間超音波処理する。ガラス製基板を新しい蒸留水で洗浄し、続いて、蒸留水中において更に1分間65℃で超音波処理する。最後に、基板をメタノール中において1分間室温で超音波処理し、続いて、新しいメタノールで濯ぎ、2000rpmに設定されたスピンコート器を使用し、30秒間スピンして乾燥する。
Claims (20)
- 閉磁界非平衡マグネトロンスパッタイオンプレーティングによって、有機材料上に導電性材料を堆積する方法。
- 光学的、電気光学的または有機電子装置またはそれらの構成要素を製造する方法であって、閉磁界非平衡マグネトロンスパッタイオンプレーティングによって、有機材料の層上に導電性材料の層を堆積する工程を含む方法。
- −コートされるべき基板を支持する保持手段と、
−コートされるべき前記基板の方を向く電界を生成する電界手段と、
−それぞれ内側磁極および外側磁極を有する少なくとも2個のマグネトロンを含み、前記外側磁極は前記内側磁極の磁気極性と反対の磁気極性である磁界手段と、
を含むマグネトロンスパッタイオンプレーティング系を使用し、
ただし、使用において、コートされるべき基板は前記保持手段に提供され、イオンが該基板に引き付けられカソードとなるように前記電界によって電気的にバイアスされており、
ただし、前記マグネトロンの少なくとも一方は非平衡マグネトロンであり、一方の前記マグネトロンの前記外側磁極ともう一方の隣接するマグネトロンの前記外側環状磁極とは反対の磁気極性であり、前記外側磁極の間で磁界が実質的に延在するようにそれぞれ互いに十分近くにあり、それによって隣接するマグネトロン間でイオン化電子が漏れ出すことを実質的に防ぎ、その結果、これら前記電子が失われず、前記電気的にバイアスされた基板におけるイオン化の増加に有用であり、
ただし、前記磁界手段はプラズマ保持場を生成し、前記プラズマ保持場は前記隣接するマグネトロンの前記外側磁極間の直接磁気連結によって生成されており、ただし、前記基板は前記プラズマ保持場の内側にある
ことを特徴とする請求項1または2に記載の方法。 - 該有機材料は誘電体材料であることを特徴とする請求項1〜3のいずれか一項に記載の方法。
- 該有機材料の層はゲート絶縁体層であることを特徴とする請求項2〜4のいずれか一項に記載の方法。
- 該有機材料は有機ポリマーまたは架橋された有機ポリマーであることを特徴とする請求項1〜5のいずれか一項に記載の方法。
- 該有機材料は、フッ素化またはペルフッ素化された炭化水素ポリマー、BCB(ベンゾシクロブテン:benzocyclobutene)またはBCBポリマー、ポリアクリレート類およびポリシクロオレフィン類、フッ素化されたパラ−キシレン、フルオロポリアリールエーテル、フッ素化されたポリイミド、ポリスチレン、ポリ(α−メチルスチレン)、ポリ(α−ビニルナフタレン)、ポリ(ビニルトルエン)、ポリエチレン、シス−ポリブタジエン、ポリプロピレン、ポリイソプレン、ポリ(4−メチル−1−ペンテン)、ポリ(4−メチルスチレン)、ポリ(クロロトリフルオロエチレン)、ポリ(2−メチル−1,3−ブタジエン)、ポリ(p−キシリレン)、ポリ(α−α−α’−α’テトラフルオロ−p−キシリレン)、ポリ[1,1−(2−メチルプロパン)ビス(4−フェニル)カーボネート]、ポリ(シクロヘキシルメタクリレート)、ポリ(クロロスチレン)、ポリ(2,6−ジメチル−1,4−フェニレンエーテル)、ポリイソブチレン、ポリ(ビニルシクロヘキサン)、ポリ(ビニルシンナメート)、ポリ(4−ビニルビフェニル)、ポリ(1,3−ブタジエン)、ポリフェニレン、ポリシクロオレフィン類;ポリ(エチレン/テトラフルオロエチレン)、ポリ(エチレン/クロロトリフルオロ−エチレン)、フッ素化されたエチレン/プロピレンコポリマー、ポリスチレン−co−α−メチルスチレン、エチレン/エチルアクリレートコポリマー、ポリ(スチレン/10%ブタジエン)、ポリ(スチレン/15%ブタジエン)、ポリ(スチレン/2,4ジメチルスチレン)の規則的、ランダムまたはブロックコポリマー、および、前述のポリマーの1種類以上のモノマー単位を含有するコポリマーから成る群より選択されることを特徴とする請求項1〜6のいずれか一項に記載の方法。
- 該有機材料は、ポリプロピレン、ポリイソブチレン、ポリ(4−メチル−1−ペンテン)、ポリイソプレン、ポリ(ビニルシクロヘキサン)、BCBポリマー、ポリアクリレート類、ポリシクロオレフィン類、フッ素化された炭化水素コポリマー、ペルフッ素化された炭化水素ポリマー、および、前述のポリマーの1種類以上のモノマー単位を含有するコポリマーから成る群より選択されることを特徴とする請求項1〜7のいずれか一項に記載の方法。
- 該有機材料は、BCBポリマー、ポリシクロオレフィン類およびポリアクリレート類より選択されることを特徴とする請求項8に記載の方法。
- 該有機材料は1.0〜5.0の誘電率を有することを特徴とする請求項1〜9のいずれか一項に記載の方法。
- 該有機材料は1.8〜4.0の誘電率を有することを特徴とする請求項10に記載の方法。
- 該導電性材料の層は電極であることを特徴とする請求項2〜11のいずれか一項に記載の方法。
- 該導電性材料は、金属、金属酸化物、金属硫化物、金属窒化物、炭素、酸化ケイ素、窒化ケイ素、または、1種類以上の前述のものの混合物または組み合わせから成る群より選択されることを特徴とする請求項1〜12のいずれか一項に記載の方法。
- 該導電性材料は、Au、Ag、Cu、Al、Ni、Co、Cu、Cr、Pt、Pd、Ca、W、In、Pb、ITO(インジウムスズ酸化物)、AZO(アルミニウム亜鉛酸化物)およびGaInZnOから成る群より選択されることを特徴とする請求項14に記載の方法。
- 該スパッタされた導電性材料の層は、5nm〜1μmの厚みを有することを特徴とする請求項1〜14のいずれか一項に記載の方法。
- 基板(1)上にゲート電極(2)を形成する工程と、該ゲート電極(2)および該基板(1)の最表面上に誘電体層(3)を形成する工程と、閉磁界非平衡マグネトロンスパッタイオンプレーティング法によって該誘電体層(3)の最表面上に導電性材料の層を形成する工程と、任意工程として、該導電性材料の層を構造化し、ソースおよびドレイン電極(4)を形成する工程と、および、該ソースおよびドレイン電極(4)の最表面上または間に半導体層(5)を形成する工程とを含むことを特徴とする請求項1〜15のいずれか一項に記載の方法。
- 請求項1〜16のいずれか一項に記載の方法によって入手可能または入手される、光学的、電気光学的または有機電子装置またはそれらの構成要素。
- 電気光学的ディスプレイ、液晶ディスプレイ(LCD:liquid crystal display)、光学的情報記憶装置、電子装置、有機半導体、有機電界効果トランジスタ(OFET:organic field effect transistor)、集積回路(IC:integrated circuit)、有機薄膜トランジスタ(OTFT:organic thin film transistor)、無線識別(RFID:radio frequency identification)タグ、有機発光ダイオード(OLED:organic light emitting diode)、有機発光トランジスタ(OLET:organic light emitting transistor)、エレクトロルミネセントディスプレイ、有機光起電(OPV:organic photovoltaic)装置、有機ソーラーセル(O−SC:organic solar cell)、有機レーザーダイオード(O−laser:organic laser diode)、有機集積回路(O−IC:organic integrated circuit)、点灯装置、フラットパネルディスプレイ(FPD:flat panel display)、センサー装置、電極材料、光導電体、光検出器、電子写真記録装置、キャパシタ、電荷注入層、ショットキーダイオード、平坦化層、帯電防止フィルム、導電性基板、導電性パターンから成る群より選択されることを特徴とする請求項17に記載の装置または構成要素。
- ボトムゲート有機薄膜または有機電界効果トランジスタであることを特徴とする請求項18に記載の装置または構成要素。
- 下記の順序で、以下の構成要素を含むことを特徴とする請求項19に記載の装置:
−任意の構成要素として、基板(1)、
−ゲート電極(2)、
−ゲート絶縁体としての有機誘電体層(3)、
−ソースおよびドレイン電極(4)、
−有機半導体層(5)、
−任意の構成要素として、該半導体層(5)および該ソースおよびドレイン電極(4)の最表面上の保護層。
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