JP2012502484A - 加工時における基板の分光モニタリングを使用した研磨速度の調整 - Google Patents
加工時における基板の分光モニタリングを使用した研磨速度の調整 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
Abstract
Description
様々な図面における類似の符番および名称は類似の要素を示す。
<img src="form01.gif">
であり、式中、aおよびbは、それぞれ、スペクトルの波長の範囲の下限および上限であり、Icurrent(λ)およびIreference(λ)は、それぞれ、所与の波長についての現在のスペクトルの強さおよび参照スペクトルの強さである。あるいは、この差は、平均二乗誤差として計算することもでき、すなわち、
<img src="form02.gif">
である。
Claims (15)
- 基板からの反射光の現在のスペクトルのシーケンスを受け取ることと、
前記現在のスペクトルのシーケンスのうちの現在の各スペクトルを、参照スペクトルライブラリの複数の参照スペクトルと比較して、最良一致参照スペクトルのシーケンスを生成することと、
前記最良一致参照スペクトルのシーケンスの適合度を求めることと、
前記適合度に基づき、研磨速度を調整すべきかどうか、または前記研磨速度の調整量のうちの少なくとも1つを決定することと
を含むコンピュータによる方法。 - 前記適合度が閾値以下であり、前記研磨速度を調整する請求項1に記載の方法。
- 前記適合度が閾値を上回り、前記研磨速度を維持する請求項1に記載の方法。
- 前記現在のスペクトルのシーケンスが、前記基板上の複数の放射状ゾーンからのスペクトルを含み、前記最良一致参照スペクトルのシーケンスを生成することが、複数の最良一致参照スペクトルのシーケンスを生成することを含み、ここで各ゾーンは、関連する最良一致参照スペクトルのシーケンスを有している、請求項1に記載の方法。
- 調整量を決定することが、個別のゾーンに関連する前記現在のスペクトルのシーケンスとの前記最良一致参照スペクトルに基づいて、前記個別のゾーンの研磨速度を計算することを含む、請求項4に記載の方法。
- 調整量を決定することが、前記基板全体がほぼ同時に目標の厚さに到達するように、少なくとも1つのゾーンの変更された研磨速度を計算することを含む、請求項4に記載の方法。
- 前記適合度を求めることが:
前記最良一致参照スペクトルのシーケンスに対応する前記参照スペクトルライブラリの指標のシーケンスを求めることと、
前記指標のシーケンスを関数にあてはめることと
を含む、請求項1に記載の方法。 - 前記関数が1本の線を生じさせる、請求項7に記載の方法。
- 前記適合度が、前記指標のシーケンスと前記関数との差に相当する量に基づくものである、請求項7に記載の方法。
- 前記量を、前記指標のシーケンスと前記関数との二乗誤差の和を使用して計算すること
をさらに含む、請求項9に記載の方法。 - 前記最良一致参照スペクトルのシーケンスおよび前記適合度に基づいて研磨終点を決定すること
をさらに含む請求項1に記載の方法。 - 基板からの反射光の現在のスペクトルのシーケンスを受け取ることと、
前記現在のスペクトルのシーケンスに含まれる現在の各スペクトルを、第1の参照スペクトルライブラリの第1の複数の参照スペクトルと比較して、第1の最良一致参照スペクトルのシーケンスを生成することと、
前記現在のスペクトルのシーケンスに含まれる現在の各スペクトルを、第2の参照スペクトルライブラリの第2の複数の参照スペクトルと比較して、第2の最良一致参照スペクトルのシーケンスを生成することと、
前記第1の最良一致参照スペクトルのシーケンスの第1の適合度および前記第2の最良一致参照スペクトルのシーケンスの第2の適合度を求めることと、
前記第1の適合度および前記第2の適合度の少なくとも1つに基づき、研磨速度を調整すべきかどうか、または前記研磨速度の調整量のうちの少なくとも1つを決定することと
を含む、コンピュータで実施される方法。 - 基板からの反射光の現在のスペクトルのシーケンスに含まれる現在の各スペクトルを1つまたは複数の参照スペクトルライブラリに含まれる複数の参照スペクトルと比較して、最良一致参照スペクトルのシーケンスを生成し、前記最良一致参照スペクトルのシーケンスの適合度を求める比較モジュールと、
前記適合度に基づき、研磨速度を調整すべきかどうか、または前記研磨速度の調整量を決定する調整モジュールと
を備えるコントローラ。 - 光源と、
基板から反射される光を検出して、前記光から現在のスペクトルのシーケンスを決定する検出器と、
コントローラであって、
前記現在のスペクトルのシーケンスに含まれる現在の各スペクトルを1つまたは複数の参照スペクトルライブラリに含まれる複数の参照スペクトルと比較して、最良一致参照スペクトルのシーケンスを生成し、前記最良一致参照スペクトルのシーケンスの適合度を求める比較モジュールと、
前記適合度に基づき、研磨速度を調整すべきかどうか、または前記研磨速度の調整量を決定する調整モジュールと
を含むコントローラと
を備えるシステム。 - 有形のプログラム担体上に符号化されて、データ処理装置に、
基板からの反射光の現在のスペクトルのシーケンスを受け取ることと、
前記現在のスペクトルのシーケンスに含まれる現在の各スペクトルを、参照スペクトルライブラリの複数の参照スペクトルと比較して、最良一致参照スペクトルのシーケンスを生成することと、
前記最良一致参照スペクトルのシーケンスの適合度を求めることと、
前記適合度に基づき、研磨速度を調整すべきかどうか、または前記研磨速度の調整量のうちの少なくとも1つを決定することと
を含む動作を行わせるように動作可能な、コンピュータプログラム製品
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US9437908P | 2008-09-04 | 2008-09-04 | |
US61/094,379 | 2008-09-04 | ||
PCT/US2009/055935 WO2010028180A2 (en) | 2008-09-04 | 2009-09-03 | Adjusting polishing rates by using spectrographic monitoring of a substrate during processing |
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JP2012502484A5 JP2012502484A5 (ja) | 2014-05-01 |
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WO (1) | WO2010028180A2 (ja) |
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US20100056023A1 (en) | 2010-03-04 |
WO2010028180A3 (en) | 2010-05-20 |
KR101834944B1 (ko) | 2018-03-06 |
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JP5675617B2 (ja) | 2015-02-25 |
US20130204424A1 (en) | 2013-08-08 |
US8369978B2 (en) | 2013-02-05 |
KR101944325B1 (ko) | 2019-01-31 |
KR20180030209A (ko) | 2018-03-21 |
KR20160124915A (ko) | 2016-10-28 |
US9346146B2 (en) | 2016-05-24 |
WO2010028180A2 (en) | 2010-03-11 |
KR101668675B1 (ko) | 2016-10-24 |
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