JP2012245775A5 - Mold manufacturing method and optical element - Google Patents

Mold manufacturing method and optical element Download PDF

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JP2012245775A5
JP2012245775A5 JP2011121917A JP2011121917A JP2012245775A5 JP 2012245775 A5 JP2012245775 A5 JP 2012245775A5 JP 2011121917 A JP2011121917 A JP 2011121917A JP 2011121917 A JP2011121917 A JP 2011121917A JP 2012245775 A5 JP2012245775 A5 JP 2012245775A5
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film
forming
laminated
mask
laminated film
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JP2012245775A (en
JP5743718B2 (en
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本発明は、異方性ドライエッチング方法を用いて形成される成形型の製造方法、及びこの製造方法により製造された成形型を用いて製作される光学素子に関するものである。 The present invention relates to a method for manufacturing a mold formed using an anisotropic dry etching method , and an optical element manufactured using a mold manufactured by this manufacturing method .

そこで、本発明は、凹凸のピッチが５ｎｍ以上２００ｎｍ以下である転写用パターンの凹部においてノッチ量を低減することができる成形型の製造方法、及びこの製造方法により製造された成形型を用いて製作される光学素子を提供することを目的とするものである。 Accordingly, the present invention is a method for manufacturing a mold that can reduce the amount of notches in the concave portions of the transfer pattern having a pitch of unevenness of 5 nm or more and 200 nm or less, and a mold that is manufactured by the manufacturing method. An object of the present invention is to provide an optical element .

Claims (5)

凹部及び凸部が繰り返し連続する転写用パターンの凹凸のピッチが５ｎｍ以上２００ｎｍ以下であるナノインプリント用の成形型の製造方法において、
母材の表面上にＳｉ膜とＳｉＯ２膜とを交互に積層した積層膜を形成する積層膜形成工程と、
前記積層膜形成工程にて形成された前記積層膜上に、前記凸部の形状に対応する形状のマスク膜を形成するマスク膜形成工程と、
前記マスク膜形成工程にて前記マスク膜を形成後、前記Ｓｉ膜及び前記ＳｉＯ２膜に対してそれぞれ異方性ドライエッチングの処理を行うことで前記転写用パターンを形成するドライエッチング工程と、
前記ドライエッチング工程の終了後に前記マスク膜を除去するマスク膜除去工程と、を備えたことを特徴とする成形型の製造方法。 In the method for producing a mold for nanoimprinting, in which the concave and convex pitch of the transfer pattern in which the concave and convex portions are repeated continuously is 5 nm or more and 200 nm or less,
A laminated film forming step of forming a laminated film in which Si films and SiO 2 films are alternately laminated on the surface of the base material;
A mask film forming step of forming a mask film having a shape corresponding to the shape of the convex portion on the laminated film formed in the laminated film forming step;
A dry etching step of forming the transfer pattern by performing anisotropic dry etching on the Si film and the SiO 2 film after forming the mask film in the mask film forming step;
And a mask film removing step of removing the mask film after the dry etching step is completed. 凹部及び凸部が繰り返し連続する転写用パターンの凹凸のピッチが５ｎｍ以上２００ｎｍ以下であるナノインプリント用の成形型の製造方法において、
母材の表面上に、ＷＳｉ膜、Ｓｉ膜及びＳｉＯ２膜を有する積層膜を形成する積層膜形成工程と、
前記積層膜形成工程にて形成された前記積層膜上に、前記凸部の形状に対応する形状のマスク膜を形成するマスク膜形成工程と、
前記マスク膜形成工程にて前記マスク膜を形成後、前記ＷＳｉ膜、前記Ｓｉ膜及び前記ＳｉＯ２膜に対してそれぞれ異方性ドライエッチングの処理を行うことで前記転写用パターンを形成するドライエッチング工程と、
前記ドライエッチング工程の終了後に前記マスク膜を除去するマスク膜除去工程と、を備えたことを特徴とする成形型の製造方法。 In the method for producing a mold for nanoimprinting, in which the concave and convex pitch of the transfer pattern in which the concave and convex portions are repeated continuously is 5 nm or more and 200 nm or less,
A laminated film forming step of forming a laminated film having a WSi film, a Si film and a SiO 2 film on the surface of the base material;
A mask film forming step of forming a mask film having a shape corresponding to the shape of the convex portion on the laminated film formed in the laminated film forming step;
Dry etching for forming the transfer pattern by performing anisotropic dry etching on the WSi film, the Si film, and the SiO 2 film after forming the mask film in the mask film forming step. Process,
And a mask film removing step of removing the mask film after the dry etching step is completed. 前記積層膜形成工程では、前記積層膜を構成する各膜の膜厚が前記母材の表面に向かって漸次薄くなるように、前記積層膜を形成することを特徴とする請求項１又は２に記載の成形型の製造方法。   3. The laminated film is formed in the laminated film forming step, wherein the laminated film is formed so that the thickness of each film constituting the laminated film gradually decreases toward the surface of the base material. The manufacturing method of the shaping | molding die of description. 前記積層膜形成工程では、前記積層膜を構成する各膜を、膜厚に対する前記凹部の幅の比率であるアスペクト比で０．０５以上２以下となるように形成することを特徴とする請求項１乃至３のいずれか１項に記載の成形型の製造方法。   The film forming step includes forming each film constituting the laminated film so that an aspect ratio that is a ratio of a width of the concave portion to a film thickness is 0.05 or more and 2 or less. The manufacturing method of the shaping | molding die of any one of 1-3. 請求項１乃至４のいずれか１項に記載の成形型の製造方法で製造された成形型を用いて製作される光学素子。  The optical element manufactured using the shaping | molding die manufactured with the manufacturing method of the shaping | molding die of any one of Claim 1 thru | or 4.
JP2011121917A 2011-05-31 2011-05-31 Mold manufacturing method and optical element Expired - Fee Related JP5743718B2 (en)

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JP2012245775A5 true JP2012245775A5 (en) 2014-07-17
JP5743718B2 JP5743718B2 (en) 2015-07-01

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KR102267680B1 (en) * 2013-11-29 2021-06-22 에베 그룹 에. 탈너 게엠베하 Mould with a mould pattern, and method for producing same
KR102625449B1 (en) * 2015-05-15 2024-01-16 호야 가부시키가이샤 Mask blank, mask blank manufacturing method, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method
JP2018166222A (en) * 2018-07-13 2018-10-25 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Stamper having stamper structure and manufacturing method thereof
JP7136831B2 (en) * 2020-04-08 2022-09-13 エーファウ・グループ・エー・タルナー・ゲーエムベーハー STAMPER HAVING STAMPER STRUCTURE AND MANUFACTURING METHOD THEREOF

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JP4330168B2 (en) * 2005-09-06 2009-09-16 キヤノン株式会社 Mold, imprint method, and chip manufacturing method
JP5144127B2 (en) * 2007-05-23 2013-02-13 キヤノン株式会社 Method for producing mold for nanoimprint
JP2009117588A (en) * 2007-11-06 2009-05-28 Toppan Printing Co Ltd Imprint mold, and manufacturing method of imprint mold
JP2009202352A (en) * 2008-02-26 2009-09-10 Hitachi Cable Ltd Mold for nanoimprinting and its manufacturing method

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