JP2012229476A - Evaporation source and vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To decrease load on a worker by enabling easy delivery of a vapor deposition material to an evaporation source and improve reproducibility, such as composition and a thickness of a vapor deposited film, in film-forming technology using a vapor deposition apparatus.SOLUTION: A crucible 11 is structured of a crucible body 11A which is fixed inside a housing of an evaporation source and a crucible material chamber 11B which is contained inside the crucible body 11A. The crucible body 11A mainly comprises a bottom piece 11A1, side pieces 11A2, and a top piece 11A3, each having a predetermined thickness. The crucible material chamber 11B mainly comprises a bottom piece 11B1 and side pieces 11B2f, 11B2s, 11B2s, and 11B2b, each having a predetermined thickness. The crucible material chamber 11B can be inserted inside and pulled out from the crucible body 11A through an open region where the side piece 11A2 of the crucible body 11A is not provided, and a plurality of blowoff nozzles 12 are provided on the side piece 11B2f of the crucible material chamber 11B.

Description

  The present invention relates to a vapor deposition apparatus used in a film forming technique, and more particularly to a technique effective when applied to an evaporation source provided in the vapor deposition apparatus.

  For example, Japanese Patent Laid-Open No. 03-183762 (Patent Document 1) discloses an evaporation source in which an evaporation source is composed of a plurality of cells in which an evaporation substance is disposed and a common intermediate chamber adjacent to the cells. .

  In addition, International Publication No. 2006/75401 (Patent Document 2) discloses a container that stores a vapor deposition material, an opening that is provided in an upper portion of the container, and that discharges the vapor deposition material to the outside, and under the opening. And a shielding plate that shields bumped and bumped material. The evaporation source is disclosed.

  Japanese Patent Application Laid-Open No. 2008-24998 (Patent Document 3) discloses a crucible for accommodating a vapor deposition material, an upper lid having an opening for discharging the vapor deposition material from the crucible to the outside, and a lower lid. And a vacuum evaporation source having an inner lid in which one or more openings are formed.

Japanese Patent Laid-Open No. 03-183762 International Publication No. 2006/75401 JP 2008-24998 A

  For example, a vapor deposition method is used for forming a metal electrode constituting a flat panel display (FPD) such as an organic EL (Electro Luminescence) display.

  In the vapor deposition method, a vapor deposition apparatus is generally used in which a substrate to be processed and an evaporation source are arranged inside a vacuum chamber. In the vapor deposition method, the vapor deposition material disposed inside a crucible provided in the evaporation source is heated to vaporize or sublimate the vapor deposition material (hereinafter, vaporization or sublimation is referred to as gasification). . And the vapor deposition material is made to adhere to the surface of the board | substrate arrange | positioned outside the evaporation source, and it solidifies on the surface of a board | substrate, and forms a vapor deposition film.

  FIG. 9 shows the structure of the evaporation source provided in the vapor deposition apparatus studied so far by the present inventors. FIG. 9 is a cross-sectional view of the main part of the evaporation source.

  As shown in FIG. 9, the evaporation source 51 has a crucible 53 that is a heating container for heating the vapor deposition material 52. In addition, around the crucible 53, there is a heater 54 that is a heating unit that heats the vapor deposition material 52 disposed inside the crucible 53 by, for example, a Joule heating method. The crucible 53 and the heater 54 are housed inside the housing 55 of the evaporation source 51 and are fixed to the housing 55. The crucible 53 is provided with a plurality of blowing nozzles 56 (only one blowing nozzle 56 is shown in FIG. 9) for evaporating the vaporized vapor deposition material 52 to the outside of the evaporation source 51.

  Further, a lid 57 is disposed at a place where the crucible 53 is taken in and out from the evaporation source 51, and the lid 57 is fixed to the housing 55 by a screw 58. By removing the lid 57, the crucible 53 housed inside the housing 55 can be taken out of the evaporation source 51.

  However, the vapor deposition method using the crucible 53 has various technical problems described below.

  (1) When forming a metal electrode constituting an organic EL display by a vapor deposition method, it is necessary to heat the crucible 53 to a high temperature of, for example, about 600 ° C. to vaporize the vapor deposition material 52, and increase the thickness of the crucible 53 to a high temperature. The thickness must be able to withstand. Therefore, the weight of the crucible 53 is, for example, about a dozen kg. When the vapor deposition material 52 is disposed in the crucible 53, the cover 57 is once removed, the crucible 53 is taken out from the evaporation source 51, the vapor deposition material 52 is disposed inside the crucible 53, and then again to the evaporation source 51. Is installed. However, since the weight of the crucible 53 is heavy, the burden on the operator is large.

  (2) When the crucible 53 is heated, the screw 58 that fixes the lid 57 to the evaporation source 51 also becomes a high temperature of about 600 ° C., for example. Therefore, the screw 58 is easily deteriorated and easily damaged. When the screw 58 is broken, the lid 57 cannot be removed from the evaporation source 51, and the evaporation source 51 cannot be used.

  (3) After the vapor deposition material 52 is disposed inside the crucible 53, the crucible 53 is set again to the evaporation source 51. However, if the reproducibility of the position of the crucible 53 is poor, it is formed on the main surface of the substrate. Variations occur in the composition and thickness of the deposited film.

  The purpose of the present invention is to reduce the burden on the operator by facilitating the supply of the vapor deposition material to the evaporation source in the film formation technique using the vapor deposition apparatus, and also to determine the composition and thickness of the vapor deposition film. The object is to provide a technique capable of improving the reproducibility.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in this application, an embodiment of a representative one will be briefly described as follows.

  This embodiment is an evaporation source including a crucible body fixed to a housing of an evaporation source and having a crucible body having a hollow inside, and a crucible material chamber housed inside the crucible body. The crucible main body is mainly provided with a bottom surface portion having a predetermined thickness, a side surface portion provided around the upper surface side of the bottom surface portion, and an opening region in a part thereof, and an upper surface provided on the side surface portion. The crucible material chamber is mainly composed of a bottom surface portion having a predetermined thickness and a side surface portion provided around the upper surface side of the bottom surface portion. From the opening region of the crucible body, the crucible body The crucible material chamber is exposed when the crucible material chamber is stored inside the crucible body, and the crucible material chamber can be taken in and out of the crucible body with the bottom surface portion of the crucible and the bottom surface portion of the crucible material chamber overlapped. A plurality of blowing nozzles are provided on the side surface portion.

  Among the inventions disclosed in the present application, effects obtained by one embodiment of a representative one will be briefly described as follows.

  In film formation technology using vapor deposition equipment, the burden on workers is reduced by facilitating the supply of vapor deposition material to the evaporation source, and the reproducibility of the composition and thickness of the vapor deposition film is improved. Can do.

It is explanatory drawing which shows the outline | summary of the manufacturing flow of the organic electroluminescent display apparatus by one embodiment of this invention. It is an expanded sectional view showing an outline structure of an organic EL element by one embodiment of the present invention. It is explanatory drawing which shows the outline | summary of the whole structure of the vacuum evaporation system by one embodiment of this invention. It is a perspective view which shows the whole structure in the film-forming chamber by one embodiment of this invention. It is principal part sectional drawing which shows the structure of the evaporation source by one embodiment of this invention. It is a perspective view which shows the structure of the crucible by one embodiment of this invention. It is principal part sectional drawing (main part sectional drawing along the AA 'line shown in FIG. 6) which shows the structure of the crucible by one embodiment of this invention. It is a perspective view which shows the modification of the structure of the crucible by one embodiment of this invention. It is principal part sectional drawing which shows the structure of the evaporation source with which the vapor deposition apparatus examined by this inventor is equipped.

  In the following embodiments, when necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other, and one is the other. There are some or all of the modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number. Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Further, in the drawings used in the following embodiments, hatching may be added to make the drawings easy to see even if they are plan views.

  In all the drawings for explaining the following embodiments, components having the same function are denoted by the same reference numerals in principle, and repeated description thereof is omitted. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  In addition, before describing the present invention in detail, the meaning of terms in the present application will be described as follows.

  Gasification refers to phase transition to the gas phase by heating a solid or liquid phase material. The phase transition to the gas phase includes vaporization (phase transition from the liquid phase to the gas phase) and sublimation (phase transition from the solid phase to the gas phase without passing through the liquid phase). When describing as vaporization, it is used to mean vaporization or sublimation. A material that is vaporized by vaporization is called a vaporization material, and a material that is vaporized by sublimation is called a sublimation material.

  Vapor deposition, a vapor deposition method, or vapor deposition processing means taking out the material vaporized inside the heating container out of the heating container, and solidifying on the surface of a to-be-processed object, and forming into a film. A film formed by vapor deposition is called a vapor deposition film, a material that is a raw material of the vapor deposition film is called a vapor deposition material, and a vaporized vapor deposition material is called a vapor deposition material gas.

  The evaporation source is a device that vaporizes a vapor deposition material and takes out the vapor deposition material gas. Therefore, the evaporation source includes a heating container for storing the vapor deposition material and a take-out port for taking out the vapor deposition material gas.

  A vapor deposition apparatus means the apparatus which performs vapor deposition processing to to-be-processed objects, such as a board | substrate, for example. Therefore, in addition to the evaporation source described above, the vapor deposition apparatus includes an airtight chamber such as a holding unit that holds an object to be processed and a vacuum chamber that stores the evaporation source and the object to be processed.

(Embodiment)
In the embodiment of the present invention, as an application example of an evaporation source, an evaporation apparatus including the evaporation source, and an evaporation method using these, it is applied to an electrode formation process of an organic EL element constituting an organic EL display apparatus (display apparatus). Take this case and explain it in detail.

<Method for Manufacturing Organic EL Display Device>
First, a method for manufacturing an organic EL display device according to the present embodiment will be briefly described with reference to FIGS. FIG. 1 is an explanatory diagram showing an outline of the manufacturing flow of the organic EL display device according to the present embodiment. FIG. 2 is an enlarged cross-sectional view showing a schematic structure of the organic EL element manufactured by the flow shown in FIG.

  As shown in FIG. 1, the manufacturing method of the organic EL display device according to the present embodiment includes a substrate preparation step and an organic EL element formation step of forming an organic EL element on the main surface of the substrate. The organic EL element formation step includes a first electrode formation step, an organic layer formation step, and a second electrode formation step.

  As shown in FIG. 2, first, in a substrate preparation step (see FIG. 1), a substrate (glass substrate) 1 having a surface 1a located on the display surface side and a back surface 1b opposite to the surface 1a is prepared. On the back surface 1b, a plurality of active elements made of TFT (Thin Film Transistor), for example, are formed in an array (not shown).

  Next, in the first electrode formation step (see FIG. 1), the conductive film 3 that becomes one electrode (for example, the anode) of the organic EL element 2a is formed on the back surface 1b of the substrate 1 (on an active element such as a TFT). Is done. In the element structure called bottom emission, since the first electrode side is the display surface of the organic EL element 2a, the conductive film 3 is made of a transparent conductive film such as ITO (Indium Tin Oxide) that is transparent to visible light. In the element structure called top emission, since the second electrode side is the display surface of the organic EL element 2a, the conductive film 3 is a laminated film of a highly reflective aluminum (Al) alloy film and a highly hole-injecting ITO film. It may be formed.

  Next, in the organic layer forming step (see FIG. 1), the organic layer 4 is formed on the conductive film 3. The organic layer 4 is a laminated film in which organic films having different functions such as a hole transport layer 4a, a light emitting layer 4b, and an electron transport layer 4c are sequentially stacked.

  Next, in the second electrode formation step (see FIG. 1), a conductive film 5 is formed on the organic layer 4 to be the other electrode of the organic EL element 2a (polarity opposite to that of the conductive film 3, for example, a cathode). . For example, the conductive film 5 is made of a metal film such as aluminum (Al) in the bottom emission structure, and is made of a metal film such as an alloy of magnesium (Mg) and silver (Ag) in the top emission structure.

  As described above, the organic EL element 2a has a structure in which the organic layer 4 is sandwiched between the anode (conductive film 3) and the cathode (conductive film 5). Holes and electrons are injected into the substrate. The injected holes pass through the hole transport layer 4a, and the electrons pass through the electron transport layer 4c and are combined in the light emitting layer 4b. Then, the light emitting material of the light emitting layer 4b is excited by the energy due to the coupling, and light is generated when the excited state returns to the ground state again. A plurality of such organic EL elements 2a are formed on the back surface 1b of the substrate 1, and each of the organic EL elements 2a or a combination of the plurality of organic EL elements 2a serves as a display device. Two pixels are formed.

  Here, among the laminated films constituting the organic EL element 2a, the organic layer 4 and the conductive film 5 are disposed on the back surface 1b of the substrate 1 by disposing the substrate 1 as an object to be processed and the evaporation source inside the vacuum chamber. A film is formed. That is, the organic layer 4 and the conductive film 5 are formed by a so-called vacuum deposition method (vacuum deposition method).

<Overall configuration of vacuum evaporation system>
Next, the overall configuration of the vacuum deposition apparatus used in the organic layer forming step and the second electrode forming step shown in FIG. 1 and the process flow of the film forming step of the organic layer 4 and the conductive film 5 shown in FIG. Will be described with reference to FIG. FIG. 3 is an explanatory diagram showing an overview of the overall configuration of the vacuum vapor deposition apparatus according to the present embodiment.

A vacuum deposition apparatus 100 shown in FIG. 3 distributes the substrate 1 to a delivery chamber 101 for delivering the substrate 1, a plurality of deposition chambers 102 that are processing chambers for forming a deposition film, and a plurality of deposition chambers, respectively. And a transfer chamber 103 for transfer. FIG. 3 shows a configuration in which a plurality of units (three in FIG. 3) including a plurality of film forming chambers 102 and transfer chambers 103 are connected via the delivery chamber 101. Each of the delivery chamber 101, the film formation chamber 102, and the transfer chamber 103 is an airtight chamber that is connected to an exhaust device (not shown) such as a vacuum pump and can be maintained in a reduced pressure state. In particular, the film formation chamber 102 that performs the vacuum deposition process is a vacuum chamber that can maintain the pressure in the chamber in a reduced pressure state (so-called high vacuum state) of, for example, about 10 ⁻³ Pa to 10 ⁻⁵ Pa.

Among the plurality of delivery chambers 101, the delivery chamber 101 on the entrance side serves as a loader unit 101a. For example, the substrate 1 on which the conductive film 3 shown in FIG. 2 is formed is carried into the loader unit 101a. In the transfer chamber 103, for example, a robot 103a is arranged as a substrate transfer device, and the substrate 1 is transferred by the robot 103a from the delivery chamber 101 (loader unit 101a) to each film forming chamber 102. In each film forming chamber 102, an evaporation source 10 provided with a vapor deposition material (not shown in FIG. 3) as a raw material of the organic layer 4 or the conductive film 5 shown in FIG. 2 is arranged, for example, 10 ^−3. Under vacuum conditions of about Pa to 10 ⁻⁵ Pa, the deposited films are sequentially stacked.

  Specifically, first, in the first film formation chamber 102, the organic layer 4 that is a deposited film to be the hole transport layer 4a is formed on the conductive film 3 that is the anode (first electrode) shown in FIG. Form a film. The substrate 1 after film formation is taken out to the transfer chamber 103 by the robot 103 a and then transferred to the second film formation chamber 102. In the second film formation chamber 102, the organic layer 4 which is a vapor deposition film to be the light emitting layer 4b is formed on the hole transport layer 4a shown in FIG. The substrate 1 after film formation is taken out to the transfer chamber 103 by the robot 103 a and then transferred to the third film formation chamber 102. In the third film formation chamber 102, the organic layer 4 which is a vapor deposition film to be the electron transport layer 4c is formed on the light emitting layer 4b shown in FIG. The substrate 1 after film formation is taken out to the transfer chamber 103 by the robot 103 a and then transferred to the fourth film formation chamber 102. In the fourth film formation chamber 102, the conductive film 5 which is a vapor deposition film to be a cathode (second electrode) is formed on the electron transport layer 4c shown in FIG.

  Then, the substrate 1 on which the conductive film 5 has been formed is transferred by the robot 103a to the delivery chamber 101 on the outlet side which is the unloader unit 101b. Then, the organic EL display device 2 shown in FIG. 2 is obtained by performing a sealing process for the purpose of protecting it from moisture and oxygen in the atmosphere. In the sealing process, the sealing substrate 7 is disposed on the organic EL element 2 a with the sealing material 6 interposed therebetween.

<Overall structure of deposition chamber and evaporation source>
Next, the configuration of the substrate 1 and the evaporation source 10 arranged in the film formation chamber 102 shown in FIG. 3 and the process flow of the vacuum deposition method performed in the film formation chamber 102 will be described with reference to FIG. To do. FIG. 4 is a perspective view showing the overall configuration inside the film forming chamber 102 shown in FIG.

  As shown in FIG. 4, an evaporation source 10 that discharges the vaporized vapor deposition material toward the substrate 1 and a substrate holding unit 20 that holds the substrate 1 are disposed inside the film forming chamber 102 that is a vacuum chamber. Has been. Inside the housing 15 of the evaporation source 10 is provided a crucible 11 having a surface 11a on which a blowing nozzle (evaporation material gas discharge port) 12 is formed. The number of blowing nozzles 12 may be one, or two or three or more. On the other hand, the substrate holding unit 20 holds the substrate 1 and a mask (evaporation mask) 21.

  The substrate 1 and the evaporation source 10 are arranged on the left and right inside the film forming chamber 102 with a predetermined interval. That is, the substrate 1 is erected by the substrate holding unit 20 (a state in which the deposition film formation surface does not face the top or bottom of the film formation chamber 102 and is perpendicular to the bottom of the film formation chamber 102). The evaporation source 10 is arranged so that one surface 11 a of the crucible 11 faces the substrate 1. Further, the substrate 1 is arranged so that the back surface 1b (see FIG. 2), which is the formation surface of the vapor deposition film, faces the one surface 11a of the crucible 11 via the mask 21. Further, the mask 21 is formed with a plurality of openings 21a corresponding to the positions where the organic EL elements 2a shown in FIG. 2 are formed, and the vapor deposition film formation region of the substrate 1 is the opening 21a. Each is exposed.

  In the vacuum vapor deposition method according to the present embodiment, a plurality of blowing nozzles 12 formed on one surface 11 a of the crucible 11 provided in the evaporation source 10 are formed by vaporizing (vaporizing or sublimating) the vapor deposition material heated inside the evaporation source 10. And is transported to a region exposed from the opening 21a of the substrate 1 (deposition film formation region). Specifically, the vapor deposition material gas blown out from the plurality of blowing nozzles 12 is blown around the vapor deposition film forming region of the substrate 1 arranged facing the plurality of blowing nozzles 12 as shown in FIG. . Then, the vapor deposition material gas is solidified (condensed and precipitated) on the surface of the vapor deposition film forming region whose temperature is lower than the inside of the evaporation source 10, thereby forming a vapor deposition film.

  By the way, from the viewpoint of improving manufacturing efficiency by increasing the number of products that can be obtained from one substrate, or from the viewpoint of increasing the size of the display device, the planar dimensions of the substrate to be processed tend to increase. For example, the planar dimension of the substrate 1 according to the present embodiment is a square of about 1.5 m × 1.5 m. Thus, when forming a vapor deposition film on the large sized substrate 1, if the evaporation source which covers the whole back surface 1b (refer FIG. 2) of the substrate 1 is used, an evaporation source will enlarge. Therefore, in the present embodiment, the evaporation source 10 having a size smaller than that of the substrate 1 is used and scanning is performed along one side of the substrate 1, thereby suppressing an increase in the size of the evaporation source 10. For example, the evaporation source 10 is installed on a shaft unit that moves in the vertical direction (direction perpendicular to the bottom surface of the film formation chamber) or the left and right direction (direction parallel to the bottom surface of the film formation chamber). By moving in the vertical direction or the horizontal direction, the vapor deposition material gas can be sprayed to each vapor deposition film forming region of the substrate 1. FIG. 4 illustrates a case where the evaporation source 10 is moved in the vertical direction 22 and the vapor deposition material gas is sprayed onto each vapor deposition film forming region of the substrate 1. Further, a method of moving the substrate 1 instead of the evaporation source 10 or a method of moving both the substrate 1 and the evaporation source 10 can be applied.

<Detailed structure of evaporation source>
Next, the detailed structure of the evaporation source 10 will be described with reference to FIGS. FIG. 5 is a cross-sectional view of the main part showing the structure of the evaporation source 10. 6 is a perspective view showing the structure of the crucible 11, and FIG. 7 is a cross-sectional view of the main part showing the structure of the crucible 11 (a cross-sectional view of the main part along the line AA 'shown in FIG. 6).

  As shown in FIG. 5, the evaporation source 10 includes a crucible 11 that is a heating container for heating the vapor deposition material. Further, around the crucible 11, there is a heater 14 that is a heating unit that heats the vapor deposition material 13 disposed at the bottom of the crucible 11 by, for example, a Joule heating method. The vapor deposition material 13 is a solid made of an alloy of magnesium (Mg) and silver (Ag), for example. These crucible 11, heater 13, and the like are accommodated in a housing 15 included in the evaporation source 10. In addition, a plurality of blowing nozzles 12 (only one blowing nozzle 12 is illustrated in FIG. 5) are provided on one surface 11 a of the crucible 11 to evaporate the vaporized vapor deposition material 13 to the outside of the evaporation source 10. Yes.

When the vapor deposition material 13 is heated by the heater 14 provided in the evaporation source 10, the vapor deposition material 13 is vaporized (vaporized or sublimated) to become a vapor deposition material gas. And when the vapor deposition material 13 is gasified, the inside of the crucible 11 will be a pressure of about 10 ⁰ Pa to 10 ¹ Pa, for example. For this reason, the vapor deposition material gas is taken out of the evaporation source 10 via the blowing nozzle 12 formed in the crucible 11 due to the pressure difference between the inside and outside of the crucible 11.

  As shown in FIGS. 6 and 7, the crucible 11 includes a crucible body 11A having a hollow inside and a crucible material chamber 11B housed inside the crucible body 11A. The crucible body 11A and the crucible material chamber 11B are formed as separate bodies, and both are completely separated. That is, the crucible main body 11A mainly includes one bottom surface portion 11A1 having a predetermined thickness, a side surface portion 11A2 provided around the upper surface side of the bottom surface portion 11A1, and partially having an open region, and a side surface portion. 11A2 and an upper surface portion 11A3 provided on the opposite side of the bottom surface portion 11A1. The crucible material chamber 11B mainly includes one bottom surface portion 11B1 having a predetermined thickness and side surface portions 11B2f, 11B2s, 11B2s, and 11B2b provided around the upper surface of the bottom surface portion 11A1. The crucible body 11A is fixed to the casing 15 by fastening means (not shown), but the crucible material chamber 11B is not fixed and is removed from the casing 15 and taken out of the evaporation source 10. Is possible.

  As a specific example, the crucible main body 11A mainly includes one rectangular bottom surface portion 11A1, three rectangular side surface portions 11A2, and one rectangular top surface portion 11A3 each having a predetermined thickness. It has a hexahedral structure having a hollow inside and an open region on the side surface. The crucible material chamber 11B has a drawer structure that can be taken in and out of the crucible main body 11A. The crucible material chamber 11B mainly includes one rectangular bottom surface portion 11B1 and four rectangular side surface portions 11B2f, each having a predetermined thickness. 11B2s, 11B2s, and 11B2b. Thus, the crucible material chamber 11B is moved without sliding the crucible body 11A by sliding the crucible material chamber 11B in a state where the bottom surface 11A1 of the crucible body 11A and the bottom surface 11B1 of the crucible material chamber 11B are overlapped. It can be taken into and out of the crucible body 11A from the opening area of 11A (stored inside or taken out outside). The crucible body 11A and the crucible material chamber 11B are preferably made of the same material. Moreover, the vapor deposition material 13 is arrange | positioned at the bottom part inside the crucible material chamber 11B (the upper surface of the bottom face part 11B1).

  Further, when the crucible material chamber 11B is housed inside the crucible body 11A, three side surfaces 11B2s, 11B2s, 11B2b out of the four side surfaces 11B2f, 11B2s, 11B2s, 11B2b of the crucible material chamber 11B are the same as those of the crucible body 11A. It is stored inside and not exposed. However, the remaining one side surface portion 11B2f is exposed, and the crucible body 11A and the side surface portion 11B2f form a shape like a single box. The exposed side surface portion 11B2f may be provided so as to be located inside the crucible body 11A (between the bottom surface portion 11A1 and the top surface portion 11A3), or provided so as to be located outside the crucible body 11A. Also good. 6 and 7 illustrate the latter case.

  Further, the exposed side surface portion 11B2f is the above-described one surface 11a of the crucible 11, and a plurality of the vaporized vapor deposition material 13 is evaporated on the side surface portion 11B2f (one surface 11a) to the outside of the evaporation source 10. A blowing nozzle 12 is provided.

  Further, the crucible material chamber 11B is configured, and between the outer side surfaces of the three side surface parts 11B2s, 11B2s, 11B2b housed inside the crucible body 11A and the inner side surface of the three side surface parts 11A2 of the crucible body 11A. When the crucible material chamber 11B is housed inside the crucible body 11A, the crucible material chamber 11B can be taken in and out, and a gap is provided so that the heating efficiency of the vapor deposition material 13 by the heater 14 does not decrease.

  Moreover, the crucible material chamber 11B is constituted, and among the three side surface portions 11B2s, 11B2s, 11B2b housed inside the crucible body 11A, the two side surface portions 11B2s, 11B2s along the direction of taking in and out the crucible material chamber 11B On the outer surface, guide rails 16 each having a predetermined width are provided along the direction in which the crucible material chamber 11B is taken in and out. On the other hand, the crucible body 11A is formed with a groove 17 into which the guide rail 16 provided in the crucible material chamber 11B is inserted. Therefore, since this guide rail 16 is provided, even if the crucible material chamber 11B is taken in and out of the crucible body 11A, the position of the crucible material chamber 11B does not shift.

  Thus, the following effects can be obtained by dividing the crucible 11 into the crucible body 11A and the crucible material chamber 11B in which the vapor deposition material 13 is disposed, and taking in and out only the crucible material chamber 11B.

  In the crucible 11 according to the present embodiment, the thickness obtained by combining the thickness of each surface constituting the crucible body 11A and the thickness of each surface constituting the crucible material chamber 11B overlapping with each surface can maintain heat resistance. Any thickness is acceptable. Therefore, among the bottom surface portion 11B1 and the side surface portions 11B2f, 11B2s, 11B2s, and 11B2b constituting the crucible material chamber 11B, at least the bottom surface portion 11B1 and the three side surface portions 11B2s that are accommodated inside the crucible body 11A of the crucible material chamber 11B, Each thickness of 11B2s and 11B2b can be made thin. As a result, for example, the crucible material chamber 11B can be made lighter than the crucible 53 shown in FIG. 9, so that the deposition material 13 is placed inside the crucible 11 or the blow nozzle 12 is maintained (attached). The burden on the operator when removing the deposited precipitates and filling the vapor deposition material can be reduced.

  Furthermore, in the crucible 11 according to the present embodiment, since the crucible body 11A is fixed to the casing 15, the crucible material chamber 11B can be taken in and out of the crucible body 11A without moving the position of the crucible body 11A. A guide rail 16 is provided in the material chamber 11B along the direction in which the crucible material chamber 11B is taken in and out. Therefore, when the vapor deposition material 13 is disposed inside the crucible 11 or when maintenance of the blowing nozzle 12 (removal of attached deposits, filling of the vapor deposition material, etc.) is performed, the crucible material chamber 11B is disposed with good reproducibility. Thus, the position of the vapor deposition material 13 can be determined. Thereby, reproducibility, such as a composition and thickness of the vapor deposition film formed on the main surface of the board | substrate 1, can be improved.

<Modification>
The positional relationship between the substrate 1 and the evaporation source 10 may be such that the back surface 1b (see FIG. 2) of the substrate 1 faces the one surface 11a of the crucible 11 on which a plurality of blowing nozzles 12 are disposed via the mask 22. The embodiment shown in FIG. 4 is not limited. In FIG. 4 described above, the substrate 1 and the evaporation source 10 are arranged on the left and right sides of the film forming chamber 102 at a predetermined interval, and one surface 11a of the crucible 11 on which the substrate 1 and a plurality of blowing nozzles 12 are arranged. Shows a system called a side deposit system (a plurality of blowing nozzles are arranged on the side surface of the evaporation source) in which vapor deposition material gas is sprayed in a state in which they face each other.

  In addition to the embodiment shown in FIG. 4 described above, as a modification, the substrate 1 is disposed at the top of the film forming chamber 102, the evaporation source 10 is disposed at the bottom of the film forming chamber 102, and the substrate 1 and a plurality of blowing nozzles 12 are disposed. It can be applied to a face-down deposit method (a plurality of blowing nozzles are disposed on the upper surface of the evaporation source) in which vapor deposition material gas is blown in a state where the one surface 11a of the crucible 11 faces each other.

  As a modification, an evaporation source provided in a vapor deposition apparatus that employs a face-down deposit method will be described below. FIG. 8 is a perspective view showing the deformability of the structure of the crucible.

  As shown in FIG. 8, the crucible 30 includes a crucible body 30A having a hollow inside and a crucible material chamber 30B housed inside the crucible body 30A. That is, the crucible body 30A is mainly composed of one rectangular bottom surface portion 30A1, each having a predetermined thickness, three rectangular side surface portions 30A2, and one rectangular top surface portion 30A3, and the inside is hollow. And it has a hexahedral structure having an open region on the side surface. The crucible material chamber 30B has a drawer structure that can be taken in and out of the crucible main body 30A. The crucible material chamber 30B mainly includes one rectangular bottom surface portion 30B1 and four rectangular side surface portions 30B2f each having a predetermined thickness. 30B2s, 30B2s, and 30B2b. Thereby, by sliding the crucible material chamber 30B, the crucible material chamber 30B can be accommodated inside the crucible body 30A from the opening region of the crucible body 30A or taken out outside without moving the crucible body 30A. The crucible body 30A and the crucible material chamber 30B are preferably made of the same material. The vapor deposition material is disposed at the bottom inside the crucible material chamber 30B (the top surface of the bottom surface 30B1).

  Further, when the crucible material chamber 30B is housed inside the crucible body 30A, three side surfaces 30B2s, 30B2s, 30B2b out of the four side surfaces 30B2f, 30B2s, 30B2s, 30B2b of the crucible material chamber 30B are the same as those of the crucible body 30A. It is stored inside and not exposed. However, the remaining one side surface portion 30B2f is exposed, and the crucible body 30A and the side surface portion 30B2f appear to be shaped like one box. The exposed side surface portion 30B2f may be provided so as to be located inside the crucible body 30A (between the bottom surface portion 30A1 and the top surface portion 30A3), or provided so as to be located outside the crucible body 30A. Also good. FIG. 8 illustrates the latter case.

  Further, a plurality of blowing nozzles 31 for evaporating the vaporized vapor deposition material to the outside of the evaporation source 30 are provided on the upper surface portion 30A3 of the crucible body 30A.

  Furthermore, the crucible material chamber 30B is configured, and between the outer side surfaces of the three side surface portions 30B2s, 30B2s, and 30B2b housed inside the crucible body 30A and the inner side surface of the three side surface portions 30A2 of the crucible body 30A. When the crucible material chamber 30B is housed inside the crucible body 30A, the crucible material chamber 30B can be taken in and out, and a gap is provided to such an extent that the heating efficiency of the vapor deposition material by the heater 14 does not decrease.

  Moreover, the crucible material chamber 30B is configured, and of the three side surface portions 30B2s, 30B2s, 30B2b housed inside the crucible body 30A, the two side surface portions 30B2s, 30B2s along the direction of taking in and out the crucible material chamber 30B On the outer surface, guide rails 32 each having a predetermined width are provided along the direction in which the crucible material chamber 30B is taken in and out. On the other hand, a groove 33 into which the guide rail 32 provided in the crucible material chamber 30B is inserted is formed in the crucible body 30A. Therefore, since the guide rail 32 is provided, even if the crucible material chamber 30B is taken in and out of the crucible body 30A, the position of the crucible material chamber 30B does not shift.

  As described above, the crucible 30 is divided into the crucible body 30A and the crucible material chamber 30B in which the vapor deposition material is disposed, and only the crucible material chamber 30B is taken in and out of the crucible 30, thereby achieving the same effect as the evaporation source 10 described above. Can be obtained.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the above-described embodiment, the present invention is applied to the manufacture of an organic layer or a conductive film used for an organic EL element. However, the present invention is not limited to this. For example, a ferroelectric film used for a sensor or a conductive film The present invention can also be applied to the manufacture of semiconductor films and the like.

  The present invention can be applied to a vapor deposition apparatus useful for manufacturing, for example, an organic layer or a conductive film used for an organic EL element, or a ferroelectric film or a semiconductor film used for a sensor.

DESCRIPTION OF SYMBOLS 1 Substrate 1a Front surface 1b Back surface 2 Organic EL display device 2a Organic EL element 3 Conductive film 4 Organic layer 4a Hole transport layer 4b Light emitting layer 4c Electron transport layer 5 Conductive film 6 Sealing material 7 Sealing substrate 10 Evaporation source 11 Crucible 11a One surface 11A Crucible body 11A1 Bottom surface portion 11A2 Side surface portion 11A3 Top surface portion 11B Crucible material chamber 11B1 Bottom surface portion 11B2f, 11B2s, 11B2b Side surface portion 12 Blowout nozzle (deposition material gas discharge port)
13 Vapor deposition material 14 Heater 15 Housing 16 Guide rail 17 Groove 20 Substrate holding portion 21 Mask 21a Opening portion 22 Vertical direction 30 Crucible 30A Crucible body 30A1 Bottom surface portion 30A2 Side surface portion 30A3 Top surface portion 30B Crucible material chamber 30B1 Bottom surface portion 30B2 Side surface portion 31 Blow nozzle 32 Guide rail 33 Groove 51 Evaporation source 52 Vapor deposition material 53 Crucible 54 Heater 55 Housing 56 Blow nozzle 57 Lid 58 Screw 100 Vapor deposition apparatus 101 Delivery chamber 101a Loader unit 101b Unloader unit 102 Film formation chamber 103 Transfer chamber 103a Robot

Claims (11)

A crucible comprising a crucible body and a crucible material chamber housed inside the crucible body,
The crucible body is mainly provided with a first bottom surface portion having a predetermined thickness, a first side surface portion provided around the upper surface side of the first bottom surface portion, and having an opening region in part, and the first A first upper surface provided on the side surface,
The crucible material chamber mainly comprises a second bottom surface portion having a predetermined thickness and a second side surface portion provided around the upper surface side of the second bottom surface portion,
An evaporation source, wherein the crucible material chamber is taken in and out of the crucible body from the opening region of the crucible body. The evaporation source according to claim 1,
An evaporation source, wherein a plurality of blowing nozzles are provided on the second side surface portion of the crucible material chamber exposed when the crucible material chamber is housed inside the crucible body. The evaporation source according to claim 1,
An evaporation source, wherein a plurality of blowing nozzles are provided on the first upper surface portion of the crucible body. The evaporation source according to claim 1,
A guide rail having a predetermined width is provided on the outer side of the second side surface portion of the crucible material chamber along the direction in which the crucible material chamber is taken in and out. ,
An evaporation source, wherein a groove into which the guide rail is inserted is formed in the first side surface portion of the crucible body along a direction in which the crucible material chamber is taken in and out. The evaporation source according to claim 1,
The evaporation source, wherein the crucible body and the crucible material chamber are made of the same material. The evaporation source according to claim 1,
The crucible material chamber is slid from the opening region of the crucible body by sliding the crucible material chamber in a state where the first bottom surface portion of the crucible body and the second bottom surface portion of the crucible material chamber are overlapped. An evaporation source characterized by being put in and out of the crucible body. The evaporation source according to claim 1,
An evaporation source, wherein a plurality of blowing nozzles are provided on the upper surface of the crucible body. A vacuum chamber, an evaporation source disposed inside the vacuum chamber, and a holding unit that holds an object to be processed inside the vacuum chamber;
The evaporation source includes a crucible composed of a crucible body and a crucible material chamber housed inside the crucible body,
The crucible body is fixed inside the housing of the evaporation source,
The crucible body is mainly provided with a first bottom surface portion having a predetermined thickness, a first side surface portion provided around the upper surface side of the first bottom surface portion, and having an opening region in part, and the first A first upper surface provided on the side surface,
The crucible material chamber mainly comprises a second bottom surface portion having a predetermined thickness and a second side surface portion provided around the upper surface side of the second bottom surface portion,
The crucible material chamber can be taken in and out of the crucible body from the opening region of the crucible body,
The evaporation source is placed such that a plurality of blowing nozzles arranged in the crucible and the object to be processed face each other.
The plurality of blowing nozzles are provided on the second side surface portion of the crucible material chamber or the first upper surface portion of the crucible body exposed when the crucible material chamber is housed inside the crucible body. The vapor deposition apparatus characterized by this. The vapor deposition apparatus according to claim 8, wherein
A guide rail having a predetermined width is provided on the outer side of the second side surface portion of the crucible material chamber along the direction in which the crucible material chamber is taken in and out. ,
A vapor deposition apparatus, wherein a groove into which the guide rail is inserted is formed in the first side surface portion of the crucible body along a direction in which the crucible material chamber is taken in and out. The vapor deposition apparatus according to claim 8, wherein
The crucible body and the crucible material chamber are made of the same material. The vapor deposition apparatus according to claim 8, wherein
The evaporation apparatus can be mounted on a shaft unit that moves in the vertical direction or the horizontal direction inside the vacuum chamber.

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