JP2012227531A - Reflecting device, communicating pipe, exhaust system, method for cleaning the system, storage medium, and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a reflecting device which can prevent intrusion of bounced particles into a processing chamber.SOLUTION: A reflecting device 36 comprises a reflector 38 consisting of a first discoid reflecting surface member 41 disposed in an exhaust manifold 16 oppositely to a TMP 18, and a second annular reflecting surface member 42 disposed on the periphery of the first reflecting surface member 41 and having a plane angle set to direct a rotating shaft 43 of the TMP 18.

Description

  The present invention relates to a reflection device, a communication pipe, an exhaust system, a cleaning method for the system, a storage medium, and a substrate processing apparatus, and in particular, a reflection device that prevents particles from entering a processing chamber of the substrate processing apparatus, a communication pipe, The present invention relates to an exhaust system, a cleaning method for the system, a storage medium, and a substrate processing apparatus.

  Usually, a substrate processing apparatus that performs a predetermined process on a substrate such as a wafer for a semiconductor device includes a processing chamber (hereinafter referred to as a “chamber”) that accommodates the substrate and performs a predetermined process. In this chamber, particles caused by deposits on the inner wall of the chamber and reaction products generated in a predetermined process are suspended. When these floating particles adhere to the surface of the substrate, a wiring short circuit occurs in a product manufactured from the substrate, for example, a semiconductor device, and the yield of the semiconductor device decreases. Therefore, in order to remove particles in the chamber, the substrate processing apparatus evacuates the chamber by an exhaust system.

  An exhaust system of a substrate processing apparatus includes a turbo molecular pump (hereinafter referred to as “TMP”) that is an exhaust pump capable of realizing a high vacuum, and a communication pipe that communicates the TMP and the inside of a chamber. . The TMP has a rotating shaft disposed along the exhaust flow and a plurality of blade-shaped rotating blades protruding at right angles from the rotating shaft, and the rotating blade rotates at high speed around the rotating shaft. The gas in front of the blade is exhausted at a high speed behind the rotor blade. The exhaust system discharges particles in the chamber together with the gas in the chamber by operating the TMP.

  In recent years, however, it has been found that particles flow back from the exhaust system into the chamber. Specifically, the adhering matter adhered to the TMP rotor blades peels off and flows back into the chamber, or particles discharged from the chamber collide with the TMP rotor blades and recoil, and enter the chamber as they are. It has been found that it flows backward.

  Both deposits peeled from the rotor blades and particles recoiled by the rotor blades are given large kinetic energy by the rotor blades rotating at high speed, so that they repeatedly elastically collide with the inner wall of the communication pipe, and the exhaust flow in the communication pipe It is believed that it enters the chamber despite its presence.

  With respect to the backflow of particles described above, the deposits separated from the rotor blades are prevented from occurring by improving the TMP replacement frequency (see, for example, Non-Patent Document 1).

Sato et al., “Visualization of Backflow Particles from Turbo Molecular Pump”, Nihon Kogyo Publishing Co., Ltd., Clean Technology, 2003.6, p. 20-23

  However, since the particles that rebounded by the rotor blades accidentally collide between the particles and the rotor blades, they cannot be prevented even if the TMP replacement frequency is improved. As described above, the recoiled particles repeatedly undergo elastic collision with the inner wall of the communication pipe, enter the chamber, and adhere to the substrate surface, thereby reducing the yield of products manufactured from the substrate.

  In addition, the deposits on the inner wall of the chamber and the deposits on the parts in the chamber are peeled off due to vibration of the chamber, the viscous force of the gas flowing in the chamber, or electromagnetic stress caused by the electric field in the chamber. Thus, the timing of particles becomes unpredictable. On the other hand, since exhaust in the chamber by the exhaust system is performed at a predetermined timing, particles are not removed from the chamber when the timing at which the deposits are separated differs from the timing at which exhaust in the chamber is performed.

  A method is known in which particles that are negatively charged by plasma among particles in the chamber are captured by an electrode disposed in the chamber. However, this method cannot capture uncharged particles. Further, since it is necessary to greatly change the configuration of the chamber in order to arrange the electrode in the chamber, it is difficult to arrange the electrode in the chamber.

  A first object of the present invention is to provide a reflecting device, a communication pipe, an exhaust system, a cleaning method for the system, and a storage medium that can prevent particles from entering the processing chamber.

  A second object of the present invention is to provide a substrate processing apparatus capable of efficiently capturing particles in a processing chamber without greatly changing the configuration of the processing chamber.

  In order to achieve the first object, the reflection device according to claim 1 is a reflection device disposed inside a communication pipe that communicates with a processing chamber of a substrate processing apparatus and an exhaust pump having a rotary blade. At least one reflecting surface directed to the exhaust pump is provided.

  The reflection device according to claim 2 is the reflection device according to claim 1, wherein the reflection surface is formed by a spherical surface.

  According to a third aspect of the present invention, in the reflective device according to the first aspect, the reflective surface is formed by a flat surface.

  According to a fourth aspect of the present invention, there is provided the reflection device according to the second aspect, wherein the flat surface forms an acute angle with a rotation surface of the rotor blade in the exhaust pump.

  In order to achieve the first object, the reflection device according to claim 5 is a reflection device disposed inside a communication pipe that communicates a processing chamber of the substrate processing apparatus and an exhaust pump having a rotary blade. It is provided with a kinetic energy lowering mechanism that lowers the kinetic energy of recoil particles.

  The reflection device according to claim 6 is the reflection device according to claim 5, wherein the kinetic energy reduction mechanism includes a plurality of convex members or concave members.

  The reflection device according to claim 7 is the reflection device according to claim 6, wherein the convex shape of the convex member or the concave shape of the concave member is any one of a cone, a pyramid, a cylinder, a prism, and a hemisphere. And

  A reflection device according to an eighth aspect is the reflection device according to the fifth aspect, wherein the kinetic energy lowering mechanism is made of a shock absorbing material.

  The reflection device according to claim 9 is the reflection device according to claim 5, wherein the kinetic energy reduction mechanism includes a plurality of small rooms having openings.

  In order to achieve the first object, the reflecting device according to claim 10 is a reflecting device disposed inside a communication pipe that communicates with a processing chamber of the substrate processing apparatus and an exhaust pump having a rotating blade. A particle capturing mechanism for capturing recoiling particles is provided.

  The reflecting device according to an eleventh aspect is the reflecting device according to the tenth aspect, wherein the particle capturing mechanism is made of a cotton-like body or a porous body.

  A reflection device according to a twelfth aspect is the reflection device according to the eleventh aspect, wherein the cotton-like body is made of stainless felt or fluororesin felt.

  A reflecting device according to a thirteenth aspect is the reflecting device according to the tenth aspect, wherein the particle capturing mechanism is made of an adhesive material.

  In order to achieve the first object, a communication pipe according to claim 14 is a communication pipe that communicates a processing chamber of a substrate processing apparatus and an exhaust pump having a rotary blade, and is at least one of inner walls of the communication pipe. The portion is directed to the exhaust pump.

  In order to achieve the first object, a communication pipe according to claim 15 is a communication pipe that communicates with a processing chamber of a substrate processing apparatus and an exhaust pump having a rotary blade, and the kinetic energy of recoiling particles is obtained. A kinetic energy lowering mechanism is provided.

  The communication pipe according to claim 16 is the communication pipe according to claim 15, wherein the kinetic energy lowering mechanism is composed of a plurality of convex members or concave members disposed on an inner wall of the communication pipe.

  The communication pipe according to claim 17 is the communication pipe according to claim 16, wherein the convex shape of the convex member or the concave shape of the concave member is composed of any one of a cone, a pyramid, a cylinder, a prism, and a hemisphere. And

  The communication pipe according to claim 18 is the communication pipe according to claim 15, wherein the kinetic energy lowering mechanism is composed of a plurality of fins protruding from the inner wall of the communication pipe.

  The communication pipe according to claim 19 is the communication pipe according to claim 15, wherein the kinetic energy reduction mechanism is made of an impact absorbing material disposed on an inner wall of the communication pipe.

  The communication pipe according to claim 20 is characterized in that in the communication pipe according to claim 15, the kinetic energy lowering mechanism is composed of a plurality of small rooms arranged on the inner wall of the communication pipe and having openings.

  In order to achieve the first object, the communication pipe according to claim 21 is a communication pipe that communicates a processing chamber of the substrate processing apparatus and an exhaust pump having a rotary blade, and is a particle that captures recoil particles. A capturing mechanism is provided.

  The communication pipe according to claim 22 is the communication pipe according to claim 21, wherein the particle capturing mechanism is made of a cotton-like body or a porous body disposed on an inner wall of the communication pipe.

The communication pipe according to claim 23 is the communication pipe according to claim 22, wherein the cotton-like body is made of stainless felt or fluororesin felt.

  A communication pipe according to a twenty-fourth aspect is the communication pipe according to the twenty-first aspect, wherein the particle capturing mechanism is made of an adhesive material disposed on an inner wall of the communication pipe.

  In order to achieve the first object, the exhaust system according to claim 25 is an exhaust system comprising an exhaust pump and a communication pipe communicating the exhaust pump and a processing chamber of the substrate processing apparatus. It is provided with at least any one of the reflection apparatus of 1 thru | or 13, and the communicating pipe of Claims 14-24.

  In order to achieve the first object, the exhaust system cleaning method according to claim 26 includes an exhaust path communicating with an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, the processing chamber, and the exhaust pump. An exhaust system cleaning method comprising an on-off valve capable of shutting off the communication of the exhaust system, wherein the on-off valve closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump, and the exhaust path A rough evacuation step for rough evacuation, and a valve opening / closing step for repeatedly opening and closing the open / close valve closing the exhaust path after the rotation of the rotor blades of the exhaust pump is stopped.

  In order to achieve the first object, the exhaust system cleaning method according to claim 27 includes an exhaust path communicating with an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, the processing chamber, and the exhaust pump. An exhaust system cleaning method comprising an on-off valve capable of shutting off the communication of the exhaust system, wherein the on-off valve closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump, and the exhaust path A rough evacuation step for evacuating the gas and a viscous flow generation step for generating a viscous flow in the vicinity of the on-off valve with the exhaust path closed.

  In order to achieve the first object, the exhaust system cleaning method according to claim 28 includes an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, the processing chamber, and the exhaust pump. An exhaust system cleaning method comprising an on-off valve capable of shutting off the communication of the exhaust system, wherein the on-off valve closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump, and the exhaust path A particle holding step in which the on-off valve closing the particle captures and holds particles flowing through the exhaust path, and a step in which the on-off valve holding the particles exits the exhaust path.

  In order to achieve the first object, the exhaust system cleaning method according to claim 29 includes a processing chamber of the substrate processing apparatus and an exhaust path communicating with an exhaust pump having a rotary blade, the processing chamber, and the exhaust pump. An exhaust system cleaning method comprising: at least two on-off valves capable of interrupting communication between the at least two on-off valves, wherein an on-off valve disposed on the processing chamber side closes the exhaust path and A first shut-off step for shutting off the communication between the processing chamber and the exhaust pump; a rough evacuation step for roughly evacuating the exhaust passage; and an on-off valve disposed on the processing chamber side closing the exhaust passage. And a valve opening / closing step that repeats the above.

  The exhaust system cleaning method according to claim 30 is the exhaust system cleaning method according to claim 29, wherein an on-off valve disposed on the exhaust pump side of the at least two on-off valves closes the exhaust path. The method further comprises a second blocking step for blocking communication between the processing chamber and the exhaust pump.

  In order to achieve the first object, the exhaust system cleaning method according to claim 31 includes an exhaust path communicating with an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, the processing chamber, and the exhaust pump. An exhaust system cleaning method comprising: at least two on-off valves capable of interrupting communication between the at least two on-off valves, wherein an on-off valve disposed on the processing chamber side closes the exhaust path and A first shut-off step for shutting off the communication between the processing chamber and the exhaust pump; and an on-off valve disposed on the exhaust pump side of the at least two on-off valves closes the exhaust path to close the processing chamber and the exhaust A second shut-off step for shutting off the communication of the pump, a rough evacuation step for roughly evacuating the exhaust path, and an on-off valve disposed on the processing chamber side closing the exhaust path. A communication recovery step for recovering the communication between the processing chamber and the exhaust pump, and a viscous flow generation step for generating a viscous flow in the vicinity of the on-off valve disposed on the exhaust pump side with the exhaust path closed. Features.

  In order to achieve the first object, the exhaust system cleaning method according to claim 32 includes a processing chamber of the substrate processing apparatus and an exhaust path communicating with an exhaust pump having a rotary blade, the processing chamber, and the exhaust pump. An exhaust system cleaning method comprising: at least two on-off valves capable of interrupting communication between the at least two on-off valves, wherein an on-off valve disposed on the processing chamber side closes the exhaust path and A blocking step for blocking communication between the processing chamber and the exhaust pump; a particle holding step for capturing and holding particles flowing through the exhaust path by an on-off valve disposed on the processing chamber side that closed the exhaust path; And an opening / closing valve holding particles exits from the exhaust path.

  In order to achieve the first object, a storage medium according to a thirty-third aspect includes an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, and communication between the processing chamber and the exhaust pump. A computer-readable storage medium for storing a program for causing a computer to execute a cleaning method for an exhaust system including an on-off valve capable of being shut off, wherein the program closes the exhaust path and the processing chamber And a shut-off module that shuts off the communication of the exhaust pump, a rough evacuation module that roughly evacuates the exhaust path, and an on-off valve that closes the exhaust path after the rotation of the rotor blades of the exhaust pump stops. And a valve opening / closing module that repeats the above.

  In order to achieve the first object, a storage medium according to a thirty-fourth aspect includes an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, and communication between the processing chamber and the exhaust pump. A computer-readable storage medium for storing a program for causing a computer to execute a cleaning method for an exhaust system including an on-off valve capable of being shut off, wherein the program closes the exhaust path and the processing chamber And a shut-off module that shuts off the communication of the exhaust pump, a rough evacuation module that roughly evacuates the exhaust path, and a viscous flow generation module that generates a viscous flow in the vicinity of an on-off valve that closes the exhaust path. It is characterized by that.

  In order to achieve the first object, a storage medium according to a thirty-fifth aspect includes an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, and communication between the processing chamber and the exhaust pump. A computer-readable storage medium for storing a program for causing a computer to execute a cleaning method for an exhaust system including an on-off valve capable of being shut off, wherein the program closes the exhaust path and the processing chamber And a shutoff module that shuts off the communication of the exhaust pump, a particle holding module that captures and holds particles flowing through the exhaust path by an on-off valve that closes the exhaust path, and an on-off valve that holds the particles includes the exhaust path. And a module exiting from the system.

  In order to achieve the first object, a storage medium according to a thirty-sixth aspect includes an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, and communication between the processing chamber and the exhaust pump. A computer-readable storage medium storing a program for causing a computer to execute an exhaust system cleaning method including at least two on-off valves that can be shut off, wherein the program is the processing chamber among the at least two on-off valves. A first shut-off module that closes the exhaust path to shut off the communication between the processing chamber and the exhaust pump, a rough evacuation module that roughly evacuates the exhaust path, and the exhaust The open / close valve disposed on the processing chamber side with the path closed has a valve open / close module that repeats opening and closing.

  In order to achieve the first object, a storage medium according to claim 37 includes an exhaust path that communicates an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, and communication between the processing chamber and the exhaust pump. A computer-readable storage medium storing a program for causing a computer to execute an exhaust system cleaning method including at least two on-off valves that can be shut off, wherein the program is the processing chamber among the at least two on-off valves. An on-off valve arranged on the side closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump, and is arranged on the exhaust pump side of the at least two on-off valves. A second shut-off module for shutting off the communication between the processing chamber and the exhaust pump by closing the exhaust path with an on-off valve; A rough evacuation module for emptying, a communication recovery module for recovering communication between the processing chamber and the exhaust pump with an on-off valve disposed on the processing chamber side closing the exhaust path, and the exhaust path closing the exhaust path And a viscous flow generating module for generating a viscous flow in the vicinity of an on-off valve disposed on the exhaust pump side.

  In order to achieve the first object, a storage medium according to claim 38 includes: an exhaust path that communicates an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and communication between the processing chamber and the exhaust pump. A computer-readable storage medium storing a program for causing a computer to execute an exhaust system cleaning method including at least two on-off valves that can be shut off, wherein the program is the processing chamber among the at least two on-off valves. An on-off valve disposed on the side closes the exhaust path to block communication between the processing chamber and the exhaust pump, and an on-off valve disposed on the processing chamber side closes the exhaust path A particle holding module that captures and holds particles flowing through the path, and an open / close valve that holds the particles includes the exhaust path. And having a module for al exit.

  In order to achieve the second object, a substrate processing apparatus according to claim 39, wherein the substrate processing apparatus includes a processing chamber for processing a substrate and an exhaust path for exhausting a gas in the processing chamber. And a particle capturing component disposed on a scattering path of particles scattered from a particle generation source existing in one of the exhaust paths.

  A substrate processing apparatus according to a forty-second aspect is the substrate processing apparatus according to the thirty-ninth aspect, wherein the particle capturing component is made of a cotton-like body or a porous body.

  A substrate processing apparatus according to a forty-first aspect is the substrate processing apparatus according to the thirty-ninth aspect, wherein the particle capturing component is made of an impact absorbing material.

  A substrate processing apparatus according to a forty-second aspect is the substrate processing apparatus according to the thirty-ninth aspect, wherein the particle capturing component is made of an adhesive material.

  43. The substrate processing apparatus according to claim 43, wherein the particle generation source is at least one of the processing chamber and the exhaust path arranged in the substrate processing apparatus according to any one of claims 39 to 42. It is characterized by being.

  A substrate processing apparatus according to a 44th aspect of the present invention is the substrate processing apparatus according to any one of the 39th to 42nd aspects, wherein the particle generation source is a depression present in at least one of the processing chamber and the exhaust path. It is characterized by that.

  In order to achieve the first object, the exhaust system cleaning method according to claim 45 includes an exhaust path communicating with an exhaust pump having a processing chamber of a substrate processing apparatus and a rotary blade, the processing chamber, and the exhaust pump. An exhaust system cleaning method comprising an on-off valve capable of shutting off the communication of the exhaust system, wherein the on-off valve closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump, and the exhaust pump A valve opening / closing step in which the opening / closing valve closing the exhaust path repeats opening / closing while rotating the rotor blade, a cleaning step for cleaning the processing chamber of the substrate processing chamber after repeated opening / closing of the opening / closing valve, and the processing And a loading step for loading the substrate into the room.

  In order to achieve the first object, a storage medium according to a 46th aspect includes an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade, and communication between the processing chamber and the exhaust pump. A computer-readable storage medium for storing a program for causing a computer to execute a cleaning method for an exhaust system including an on-off valve capable of being shut off, wherein the program closes the exhaust path and the processing chamber And a shut-off module that shuts off the communication of the exhaust pump, a valve open / close module that repeatedly opens and closes the open / close valve that closes the exhaust path while rotating the rotor blades of the exhaust pump, and after repeated opening and closing of the open / close valve A cleaning module that cleans the processing chamber of the substrate processing chamber, and a loading module that loads the substrate into the processing chamber. To.

  According to the reflection device according to claim 1, since the reflection device arranged inside the communication pipe includes at least one reflection surface directed to the exhaust pump, the particles recoiled by the rotor blades are directed toward the exhaust pump. Thus, it is possible to prevent rebound particles from entering the processing chamber.

  According to the reflection device according to claim 5, since the reflection device disposed inside the communication pipe includes the kinetic energy reduction mechanism that reduces the kinetic energy of the recoiled particles, the motion of the particles recoiled by the rotor blades. The energy can be reduced, and thus, the recoiled particles can be prevented from entering the processing chamber.

  According to the reflection device of the eighth aspect, since the kinetic energy reduction mechanism is made of the shock absorbing material, it can absorb the kinetic energy of the particles that have recoiled by the rotating blades. It is possible to reliably prevent the intrusion into.

  According to the reflecting device of the tenth aspect, the particle capturing mechanism that captures the rebounding particles is provided by the reflecting device disposed inside the communication pipe that communicates with the processing chamber of the substrate processing apparatus and the exhaust pump having the rotating blades. Therefore, the particles that have recoiled by the rotating blades can be captured, thereby preventing the recoiled particles from entering the processing chamber.

  According to the communication pipe of claim 14, since at least a part of the inner wall of the communication pipe that communicates with the processing chamber of the substrate processing apparatus and the exhaust pump having the rotary blades is directed to the exhaust pump, the particles recoiled by the rotary blades. Can be reflected toward the exhaust pump, thereby preventing recoiled particles from entering the processing chamber.

  According to the communication pipe of claim 15, since the communication pipe communicating with the processing chamber of the substrate processing apparatus and the exhaust pump having the rotary blade includes the kinetic energy lowering mechanism for reducing the kinetic energy of the recoiled particles, the rotary blade Thus, the kinetic energy of the recoiled particles can be reduced, thereby preventing the recoiled particles from entering the processing chamber.

  According to the communication pipe of claim 21, since the communication pipe that communicates with the processing chamber of the substrate processing apparatus and the exhaust pump having the rotary blade is provided with the particle capturing mechanism that captures the recoiled particles, it is rebounded by the rotary blade. Particles can be captured, thereby preventing the recoiled particles from entering the processing chamber.

  According to the exhaust system of the twenty-fifth aspect, since at least one of the reflecting device of the first to thirteenth aspects and the communicating pipe of the fourteenth to twenty-fourth aspects is provided, any of the above-described effects can be achieved.

  According to the exhaust system cleaning method of claim 26 and the storage medium of claim 33, the on-off valve closes the exhaust path to shut off the communication between the processing chamber and the exhaust pump, and the exhaust path is evacuated to a rough vacuum. After the rotation of the rotor blades of the exhaust pump stops, the on-off valve that closes the exhaust path repeatedly opens and closes. Particles flowing from the processing chamber toward the exhaust pump accumulate and adhere to an on-off valve that closes the exhaust path. Further, particles deposited and adhering to the on-off valve are peeled off from the on-off valve when the on-off valve repeats opening and closing, and are removed by the exhaust flow of rough vacuuming. Thereby, when the exhaust pump starts high-speed rotation, particles flowing into the exhaust pump from the on-off valve can be eliminated. In addition, since the on-off valve repeatedly opens and closes after the rotation of the rotor blades of the exhaust pump stops, particles separated from the on-off valve do not recoil even if they collide with the rotor blades. As a result, the occurrence of rebounding particles can be prevented and the entry of particles into the processing chamber can be prevented.

  According to the exhaust system cleaning method of claim 27 and the storage medium of claim 34, the on-off valve closes the exhaust path to cut off the communication between the processing chamber and the exhaust pump, and the exhaust path is evacuated to a rough vacuum. A viscous flow is generated in the vicinity of the on-off valve whose exhaust path is closed. Particles flowing from the processing chamber toward the exhaust pump accumulate and adhere to an on-off valve that closes the exhaust path. Further, particles deposited and adhering to the on-off valve are peeled off from the on-off valve by the viscous flow and removed by the exhaust flow of the rough vacuum. As a result, particles that flow into the exhaust pump from the on-off valve when the exhaust pump starts high-speed rotation can be eliminated, thus preventing the occurrence of rebounding particles and preventing the particles from entering the processing chamber. be able to.

  According to the exhaust system cleaning method of claim 28 and the storage medium of claim 35, the on-off valve closes the exhaust path to cut off the communication between the processing chamber and the exhaust pump, and the on-off valve closes the exhaust path. The particles flowing through the exhaust path are captured and held, and the on-off valve that holds the particles exits the exhaust path. As a result, particles that flow into the exhaust pump from the on-off valve when the exhaust pump starts high-speed rotation can be eliminated, thus preventing the occurrence of rebounding particles and preventing the particles from entering the processing chamber. be able to.

  According to the exhaust system cleaning method according to claim 29 and the storage medium according to claim 36, the on-off valve disposed on the processing chamber side closes the exhaust path to cut off the communication between the processing chamber and the exhaust pump, The on-off valve disposed on the processing chamber side where the path is roughly evacuated and the exhaust path is closed repeatedly opens and closes. Particles flowing from the processing chamber toward the exhaust pump accumulate and adhere to the on-off valve disposed on the processing chamber side. Further, particles deposited and adhering to the on-off valve are peeled off from the on-off valve when the on-off valve repeats opening and closing, and are removed by the exhaust flow of rough vacuuming. As a result, particles that flow into the exhaust pump from the on-off valve when the exhaust pump starts high-speed rotation can be eliminated, thus preventing the occurrence of rebounding particles and preventing the particles from entering the processing chamber. be able to.

  According to the exhaust system cleaning method according to claim 31 and the storage medium according to claim 37, the on-off valve disposed on the processing chamber side closes the exhaust path to cut off the communication between the processing chamber and the exhaust pump. An on-off valve arranged on the pump side closes the exhaust path to cut off the communication between the processing chamber and the exhaust pump, and the exhaust path is roughly evacuated, and an on-off valve arranged on the processing chamber side connects the processing chamber and the exhaust pump. The communication is restored, and a viscous flow is generated in the vicinity of the on-off valve arranged on the exhaust pump side. Particles that flow from the processing chamber toward the exhaust pump once accumulate and adhere to the on-off valve disposed on the processing chamber side, and further, an opening / closing disposed on the processing chamber side to restore communication between the processing chamber and the exhaust pump. When the valve is activated, particles are separated from the on-off valve arranged on the processing chamber side, flow toward the on-off valve arranged on the exhaust pump side, and accumulate on the on-off valve arranged on the exhaust pump side. Particles accumulated on the on-off valve are wound up by the viscous flow from the on-off valve arranged on the exhaust pump side, and are removed by the exhaust flow of rough evacuation. As a result, particles that flow into the exhaust pump from the on-off valve when the exhaust pump starts high-speed rotation can be eliminated, thus preventing the occurrence of rebounding particles and preventing the particles from entering the processing chamber. be able to.

  According to the exhaust system cleaning method according to claim 32 and the storage medium according to claim 38, the on-off valve arranged on the processing chamber side closes the exhaust path to cut off the communication between the processing chamber and the exhaust pump, The on-off valve that closed the path captures, holds, and holds particles flowing through the exhaust path, and the on-off valve that holds the particles exits from the exhaust path. As a result, particles that flow into the exhaust pump from the on-off valve when the exhaust pump starts high-speed rotation can be eliminated, thus preventing the occurrence of rebounding particles and preventing the particles from entering the processing chamber. be able to.

  According to the substrate processing apparatus of claim 39, since the particle trapping component is arranged on the scattering path of the particles scattered from at least one of the particle generation source existing in the processing chamber and the exhaust path, only the charged particles are used. Even uncharged particles can be captured. Therefore, particles in the processing chamber can be captured efficiently without greatly changing the configuration of the processing chamber.

  According to the exhaust system cleaning method of claim 45 and the storage medium of claim 46, the on-off valve closes the exhaust path to cut off the communication between the processing chamber and the exhaust pump, and rotates the rotor blades of the exhaust pump. The open / close valve with the exhaust path closed is repeatedly opened and closed, and then the processing chamber is cleaned and the substrate is carried into the processing chamber. Particles flowing from the processing chamber toward the exhaust pump accumulate and adhere to an on-off valve that closes the exhaust path. Particles deposited and adhering to the on-off valve are peeled off from the on-off valve as the on-off valve repeats opening and closing. The peeled particles enter the exhaust pump, and the intruding particles collide with the rotating rotor blades and recoil to the processing chamber. However, before the substrate is carried into the processing chamber, it recoils to the processing chamber. The removed particles are removed by cleaning the processing chamber. Thereby, the particles accumulated and adhered to the on-off valve and the particles in the processing chamber before the substrate is carried into the processing chamber can be removed. As a result, generation of particles that recoil after the substrate is carried into the processing chamber can be prevented, and entry of particles into the processing chamber can be prevented.

It is sectional drawing which shows schematic structure of the substrate processing apparatus with which the reflective apparatus which concerns on the 1st Embodiment of this invention is applied. FIG. 2A is a cross-sectional view showing a schematic configuration of the reflection device according to the present embodiment, and FIG. 2A is a cross-sectional view showing the positional relationship among the reflection device and the exhaust manifold, APC valve, and TMP in FIG. 2 (B) is a cross-sectional view showing a modification of the reflecting device in FIG. 2 (A). It is sectional drawing which shows schematic structure of the reflective apparatus which concerns on the 2nd Embodiment of this invention, FIG. 3 (A) is a cross section which shows the positional relationship of the said reflective apparatus and the exhaust manifold, APC valve | bulb, and TMP in FIG. FIG. 3B is an enlarged cross-sectional view of a portion III in FIG. It is sectional drawing which shows schematic structure of the exhaust manifold as a communicating pipe concerning the 3rd Embodiment of this invention. It is sectional drawing which shows schematic structure of the exhaust manifold as a communicating pipe concerning the 4th Embodiment of this invention. It is sectional drawing which shows schematic structure of the exhaust manifold as a communicating pipe concerning the 5th Embodiment of this invention. It is sectional drawing which shows schematic structure of the exhaust manifold as a communicating pipe concerning the 6th Embodiment of this invention. It is sectional drawing which shows schematic structure of TMP as an exhaust pump concerning the 7th Embodiment of this invention. It is a figure which shows the modification of the exhaust pump which concerns on this Embodiment, FIG. 9 (A) is sectional drawing which shows the said exhaust pump, FIG.9 (B) is in the arrow direction in FIG. 9 (A). It is a top view of a reflecting plate. It is sectional drawing which shows schematic structure of TMP as an exhaust pump concerning the 8th Embodiment of this invention. It is sectional drawing which shows schematic structure of TMP as an exhaust pump concerning the 9th Embodiment of this invention. FIG. 12 is a cross-sectional view showing a modification of the vent hole of the baffle plate in FIG. 1, FIG. 12 (A) is a cross-sectional view showing a first modification of the vent hole, and FIG. 12 (B) is a second view of the vent hole. 12C is a cross-sectional view showing a third modification of the vent hole, and FIG. 12D is a cross-sectional view showing a fourth modification of the vent hole. FIG. 12E is a cross-sectional view showing a fifth modification of the vent hole, FIG. 12F is a cross-sectional view showing a sixth modification of the vent hole, and FIG. It is sectional drawing which shows the 7th modification of a vent hole, and FIG.12 (H) is sectional drawing which shows the 8th modification of a vent hole. It is a graph which shows the result of having confirmed the generation situation of the particle in the chamber of the substrate processing apparatus to which the communicating pipe concerning the 6th Embodiment of the present invention is applied. It is sectional drawing which shows schematic structure of the substrate processing apparatus with which the reflective apparatus concerning the 10th Embodiment of this invention is applied. It is a figure which shows the aggregate | assembly of several small rooms as a kinetic energy fall mechanism, FIG. 15 (A) is a perspective view which shows schematic structure of the aggregate | assembly of several small rooms, and FIG. It is a figure which shows the mode of the collision with the particle introduced into the room, and the wall surface of a small room. It is sectional drawing which shows the particle | grain capture | acquisition mechanism which consists of the stainless steel felt arrange | positioned at the suction part and reflector of TMP. It is sectional drawing which shows the particle | grain capture | acquisition mechanism which consists of the stainless steel felt arrange | positioned at the inner wall whole surface of the exhaust manifold and the downstream part of an exhaust path. It is a flowchart of the wafer conveyance pre-process as a cleaning method of the exhaust system based on the 11th Embodiment of this invention. It is sectional drawing which shows schematic structure of the exhaust system to which the cleaning method of the exhaust system which concerns on the 12th Embodiment of this invention is applied. It is sectional drawing which shows schematic structure of the exhaust system to which the cleaning method of the exhaust system which concerns on the 13th Embodiment of this invention is applied. It is sectional drawing which shows schematic structure of the exhaust system to which the washing | cleaning method of the exhaust system which concerns on 14th Embodiment of this invention is applied. It is a figure which shows schematic structure of the exhaust system to which the washing | cleaning method of the exhaust system which concerns on 15th Embodiment of this invention is applied, FIG.22 (A) is sectional drawing of the exhaust system, FIG.22 (B) ) Is a cross-sectional view of a modified example of the exhaust system. It is a schematic block diagram of ICPM which can observe the particle which exists in the processing space of a chamber. It is a graph which shows the number of the particles which exist in the processing space of the chamber measured by ICPM. It is sectional drawing which shows schematic structure of the substrate processing apparatus which concerns on the 17th Embodiment of this invention. It is a flowchart of the wafer conveyance pre-process as a cleaning method of the exhaust system based on the 18th Embodiment of this invention. It is a figure which shows schematic structure of TMP as an exhaust pump based on the 19th Embodiment of this invention, (A) is a longitudinal cross-sectional view of TMP, (B) is line II in (A). It is sectional drawing which follows.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, a substrate processing apparatus to which the reflecting device according to the first embodiment of the present invention is applied will be described.

  FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which a reflecting device according to a first embodiment of the present invention is applied.

  In FIG. 1, a substrate processing apparatus configured as an etching processing apparatus that performs a reactive ion etching (hereinafter referred to as “RIE”) process on a semiconductor wafer W (hereinafter simply referred to as “wafer W”). 10 includes a chamber 11 having a shape in which two large and small cylinders made of metal, for example, aluminum or stainless steel, are stacked.

  A wafer W having a diameter of, for example, 200 mm is placed in the chamber 11, and a lower electrode 12 serving as a wafer stage that moves up and down in the chamber 11 together with the placed wafer W, and a lower electrode 12 that moves up and down. A cylindrical cover 13 covering the side portion is disposed, and functions as a flow path for discharging the gas in the chamber 11 out of the chamber 11 by the side wall of the chamber 11 and the side portion or the cover 13 of the lower electrode 12. An exhaust path 14 is formed.

  An annular baffle plate 15 that divides the exhaust passage 14 into an upstream side portion 14a and a downstream side portion 14b is disposed in the middle of the exhaust passage 14, and the downstream side portion 14b includes an exhaust manifold 16 (communication pipe) and a variable type. An automatic pressure control valve (hereinafter referred to as “APC”) 17 that is a slide valve communicates with a TMP 18 that is an exhaust pump for evacuation. The APC valve 17 may be a butterfly valve. The TMP 18 depressurizes the inside of the chamber 11 until it becomes almost vacuum, and the APC valve 17 controls the pressure in the chamber 11 when the chamber 11 is depressurized. Here, the baffle plate 15 has a plurality of circular vents communicating the upstream side portion 14a and the downstream side portion 14b of the exhaust passage 14.

  The exhaust path 14, the baffle plate 15, the exhaust manifold 16, the APC valve 17 and the TMP 18 described above constitute an exhaust system.

  A lower high-frequency power source 19 is connected to the lower electrode 12 via a lower matching unit 20, and the lower high-frequency power source 19 applies a predetermined high-frequency power to the lower electrode 12. The lower matching unit 20 reduces the reflection of the high frequency power from the lower electrode 12 to maximize the incidence efficiency of the high frequency power on the lower electrode 12.

  Above the lower electrode 12, an ESC 21 for adsorbing the wafer W with electrostatic attraction is disposed. A DC power supply (not shown) is electrically connected to the ESC 21. The ESC 21 sucks and holds the wafer W on its upper surface by a Coulomb force or a Johnson-Rahbek force generated by a DC voltage applied to the ESC 21 from a DC power source. An annular focus ring 22 made of silicon (Si) or the like is disposed on the periphery of the ESC 21, and the focus ring 22 converges ions and radicals generated above the lower electrode 12 toward the wafer W. The periphery of the focus ring 22 is covered with an annular cover ring 23.

  Further, below the lower electrode 12, a support 24 extending downward from the lower portion of the lower electrode 12 is disposed. The support 24 supports the lower electrode 12 and moves the lower electrode 12 up and down by rotating a ball screw (not shown). Further, the support 24 is covered with a bellows cover 25 to be shielded from the atmosphere in the chamber 11.

  In the substrate processing apparatus 10, when the wafer W is loaded into and unloaded from the chamber 11, the lower electrode 12 is lowered to the loading / unloading position of the wafer W, and when the wafer W is subjected to RIE processing, the lower electrode 12 is moved to the wafer 11. Ascend to the W processing position.

  In addition, a shower head 26 that supplies a processing gas to be described later into the chamber 11 is disposed on the ceiling of the chamber 11. The shower head 26 is a disk-shaped upper electrode (CEL) 28 having a large number of gas vent holes 27 facing the processing space S, which is a space above the lower electrode 12, and is disposed above the upper electrode 28 and is disposed at the upper part. And an electrode support 29 that detachably supports the electrode 28.

  An upper high frequency power supply 30 is connected to the upper electrode 28 via an upper matching unit 31, and the upper high frequency power supply 30 applies a predetermined high frequency power to the upper electrode 28. The upper matching unit 31 reduces the reflection of the high frequency power from the upper electrode 28 to maximize the incidence efficiency of the high frequency power on the upper electrode 28.

A buffer chamber 32 is provided inside the electrode support 29, and a processing gas introduction pipe 33 is connected to the buffer chamber 32. A valve 34 is disposed in the middle of the processing gas introduction pipe 33, and a filter 35 is disposed upstream of the valve 34. Further, in the buffer chamber 32, for example, silicon tetrafluoride (SiF ₄ ), oxygen gas (O ₂ ), argon gas (Ar), and carbon tetrafluoride (CF ₄ ) alone or from a processing gas introduction pipe 33 are provided. A processing gas comprising a combination is introduced, and the introduced processing gas is supplied to the processing space S through the gas vent hole 27.

  In the chamber 11 of the substrate processing apparatus 10, as described above, high-frequency power is applied to the lower electrode 12 and the upper electrode 28, and high-density plasma is generated from the processing gas in the processing space S by the applied high-frequency power. Then, ions and radicals are generated. These generated radicals and ions are focused on the surface of the wafer W by the focus ring 22 and physically or chemically etch the surface of the wafer W.

  2 is a cross-sectional view showing a schematic configuration of the reflecting device according to the present embodiment, and FIG. 2A is a cross-sectional view showing the positional relationship among the reflecting device and the exhaust manifold, APC and TMP in FIG. FIG. 2B is a cross-sectional view showing a modification of the reflecting device in FIG. In FIG. 2A, the upper side in the figure is referred to as “upper side” and the lower side in the figure is referred to as “lower side”.

  In FIG. 2A, the reflection device 36 is disposed inside the exhaust manifold 16 so as to face the TMP 18 via the APC valve 17. Specifically, the exhaust manifold 16 is disposed inside the flange portion 16 a for connecting to the APC valve 17.

  The reflection device 36 includes a reflection plate support 37 made of a cylinder arranged in the vertical direction, and a reflection plate 38 arranged at the upper end of the reflection plate support 37.

  The reflector support 37 includes an upper plate 37a (opposing surface) that closes the upper end, an opening 39 that opens to the side surface, and a flange-shaped joint 40 that refracts toward the inside of the cylinder at the lower end. And have. The joining portion 40 joins the reflecting device 36 to the inside of the exhaust manifold 16 by joining with the flange portion 16a. The opening area of the opening 39 is set to a size that does not reduce the conductance of the exhaust from the exhaust manifold 16 to the APC valve 17.

  The reflecting plate 38 is a disc-shaped first reflecting surface member 41 joined to the lower surface of the upper plate 37 a of the reflecting plate support 37 so as to face the TMP 18, and a peripheral edge of the first reflecting surface member 41. And a second reflecting surface member 42 having an annular shape whose surface angle is set so as to be directed to the rotation axis 43 of the TMP 18, particularly the TMP 18.

  The TMP 18 includes a rotating shaft 43 disposed in the vertical direction in the drawing, that is, in the direction of the exhaust flow, a cylindrical main body 44 disposed in parallel to the rotating shaft 43 so as to accommodate the rotating shaft 43, A plurality of blade-like rotating blades 45 projecting perpendicularly from the shaft 43 and a plurality of blade-like stationary blades 46 projecting from the inner peripheral surface of the main body 44 toward the rotating shaft 43 are provided.

  The plurality of rotary blades 45 project radially from the rotary shaft 43 to form a rotary blade group, and the plurality of stationary blades 46 are arranged at equal intervals on the same circumference of the inner peripheral surface of the main body 44, and the rotary shaft 43. Projecting toward the surface to form a stationary blade group. In the TMP 18, there are a plurality of rotary blade groups and stationary blade groups, each rotary blade group is arranged at equal intervals along the rotary shaft 43, and each stationary blade group is arranged between two adjacent rotary blade groups. .

  In general, in the TMP 18, the uppermost rotary blade group is disposed above the uppermost stationary blade group. That is, the uppermost rotary blade group is arranged closer to the chamber 11 than the uppermost stationary blade group. In addition, the TMP 18 rotates the rotating blade 45 around the rotating shaft 43 at a high speed, thereby exhausting the gas ahead of the rotating blade 45 to the lower side of the TMP 18 at a high speed. Since some of the particles discharged from the chamber 11 reach the TMP 18, they collide with the rotating blades 45 that rotate at a high speed, that is, toward the upper side, that is, toward the exhaust manifold 16. Rebound.

  The recoiled particles enter the exhaust manifold 16 and come into contact with the reflection plate 38 of the reflection device 36. Since the first reflecting surface member 41 of the reflecting plate 38 faces the TMP 18 and the second reflecting surface member 42 faces the rotation axis 43 of the TMP 18, the particles that come into contact with the reflecting plate 38 and reflect are directed to the TMP 18. And descend. That is, the reflecting device 36 reflects the particles that have recoiled by the rotary blade 45 toward the TMP 18.

  According to the reflection device according to the present embodiment, the reflection device 36 is disposed in the exhaust manifold 16 and the first reflection surface member 41 that faces the TMP 18 and the second reflection surface member that faces the rotating shaft 43 of the TMP 18. Therefore, the particles that have recoiled by the rotary blade 45 can be reflected toward the TMP 18, thereby preventing the recoiled particles from entering the chamber 11. As a result, it is possible to improve the yield of the wafer W by preventing the substrate processing apparatus 10 from attaching particles to the wafer W on which the RIE process is performed. Further, the reflection device 36 can reflect not only the recoiled particles but also the deposits peeled off from the rotary blades 45 of the TMP 18 toward the TMP 18 similarly to the recoiled particles. Further, the reflection frequency of the recoiled particles can reduce the particle adhesion speed to the inner wall of the exhaust manifold 16 and can also reduce the frequency of cleaning the exhaust manifold 16.

  In the reflection device according to the present embodiment described above, the reflection plate 38 is constituted by the disk-shaped first reflection surface member 41 and the annular second reflection surface member 42. However, the shape of the reflection plate is as follows. For example, as shown in FIG. 2B, the spherical member 47 may be used, and the spherical member is preferably formed by a spherical surface directed to the TMP 18. Here, it has been confirmed by the present inventors that the particles are specularly reflected with respect to the reflecting surface. Therefore, when the reflector is constituted by the spherical member 47 formed by the spherical surface directed to the TMP 18, it is possible to efficiently reflect the recoiled particles toward the rotary blade 45, thereby causing the recoil. Intrusion of particles into the chamber 11 can be reliably prevented.

  Next, a reflecting device according to a second embodiment of the present invention will be described.

  This embodiment is basically the same as the first embodiment described above in configuration and operation, and is different from the first embodiment described above in that no reflector is provided. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

  3 is a cross-sectional view showing a schematic configuration of the reflecting device according to the present embodiment, and FIG. 3A is a cross-sectional view showing the positional relationship between the reflecting device and the exhaust manifold, APC and TMP in FIG. FIG. 3B is an enlarged cross-sectional view of a portion III in FIG. In FIG. 3A, the upper side in the figure is referred to as “upper side” and the lower side in the figure is referred to as “lower side”.

  3A, the reflection device 48 is disposed inside the flange portion 16a of the exhaust manifold 16, similarly to the reflection device 36 of FIG. 2A, and includes a reflection plate support 37 and a reflection plate support 37. And a convex member group 49 (kinetic energy lowering mechanism) disposed on the upper plate 37a.

  The convex member group 49 includes a plurality of conical members 50 arranged so as to protrude toward the TMP 18, and each conical member 50 has a flat surface portion between the adjacent conical members 50 being minimized. Placed in. Further, the conical member 50 may be formed of any of metal (for example, stainless steel and aluminum), resin, rubber, and the like.

  In this reflecting device 48, as shown in FIG. 3B, the particles P that have rebounded toward the exhaust manifold 16 enter between the two conical members 50 adjacent to each other, and between the two conical members 50. In the above, the collision with the side surface of each conical member 50 is repeated a plurality of times. The particles P consume kinetic energy while repeatedly colliding with the side surface, and eventually fall toward the TMP 18. That is, the reflection device 48 reduces the kinetic energy of the rebounded particle P.

  According to the reflecting device according to the present embodiment, the reflecting device 48 is disposed in the exhaust manifold 16 and includes the convex member group 49 including the plurality of conical members 50 disposed so as to protrude toward the TMP 18. The kinetic energy of the particles P recoiled by the rotary blade 45 can be reliably reduced by colliding with the conical member 50 in the convex member group 49 a plurality of times, and the recoiled particles P can be dropped toward the TMP 18. This makes it possible to prevent the recoiled particles from entering the chamber 11.

  In the reflection device according to the present embodiment described above, the convex member group 49 is composed of a plurality of conical members 50. However, the convex member group 49 is another convex convex member, for example, a pyramid, a cylinder, or the like. Alternatively, it may be constituted by a convex member having any one of a prism shape and a hemisphere shape. Thereby, a convex-shaped member can be shape | molded easily and the manufacturing cost of a reflecting device can be reduced.

  The reflection device according to the present embodiment described above may include a concave member group composed of a plurality of concave members instead of the convex member group 49. In this case, the particles P rebounded by the rotary blade 45 are concave. It is possible to reliably reduce the kinetic energy of the particle P that has entered the member into the concave shape by colliding with the concave member a plurality of times. Further, the concave shape of the concave member may be any of a cone, a pyramid, a cylinder, a prism, and a hemisphere. In this case, the concave member can be easily formed, and the manufacturing cost of the reflecting device can be reduced. it can.

  Further, the above-described reflecting device according to the present embodiment is not a convex member group composed of a plurality of convex members, but is disposed on the upper plate 37a of the reflecting plate support 37 so as to face the TMP 18. You may provide the impact-absorbing part (not shown) (kinetic energy reduction mechanism) which consists of materials, for example, soft rubber. In this case, the impact absorbing portion absorbs the kinetic energy of the recoiled particles, and thus it is possible to reliably prevent the recoiled particles from entering the chamber 11.

  Next, a communication pipe according to a third embodiment of the present invention will be described.

  FIG. 4 is a cross-sectional view showing a schematic configuration of an exhaust manifold as a communication pipe according to the present embodiment. The communication pipe according to the present embodiment is basically the same in configuration as the exhaust manifold 16 in FIG. 1, and differs in that a reflection plate 52 described later is provided inside. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below. In FIG. 4, the upper part in the drawing is referred to as “upper side” and the lower part in the drawing is referred to as “lower side”.

  In FIG. 4, the exhaust manifold 51 includes a reflection plate 52 (at least a part of the inner wall) therein, and the reflection plate 52 projects from the inner wall of the exhaust manifold 51 so as to cover the upper side of the TMP 18 and is directed to the TMP 18. A spherical member 53 formed by a spherical surface. The size of the reflecting plate 52 is set to a size that does not lower the conductance of the exhaust from the chamber 11 to the APC valve 17.

  When some of the particles discharged from the chamber 11 reach the TMP 18, they collide with the rotating blades 45 that rotate at high speed and recoil toward the exhaust manifold 51. The recoiled particles enter the exhaust manifold 51 and come into contact with the reflection plate 52 in the exhaust manifold 51. Since the reflecting plate 52 is composed of a spherical member 53 formed by a spherical surface directed to the TMP 18, the particles that come into contact with the reflecting plate 52 and reflect are lowered toward the TMP 18. That is, the reflecting plate 52 reflects the particles rebounded by the rotary blade 45 toward the TMP 18.

  According to the communication pipe according to the present embodiment, the exhaust manifold 51 includes the reflecting plate 52 inside, and the reflecting plate 52 is composed of the spherical member 53 formed by the spherical surface directed to the TMP 18. The jumped particles can be reflected toward the TMP 18, thereby preventing the recoiled particles from entering the chamber 11.

  Next, a communication pipe according to a fourth embodiment of the present invention will be described.

  This embodiment is basically the same in configuration and operation as the above-described third embodiment, and is different from the above-described third embodiment in that no reflector is provided. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

  FIG. 5 is a cross-sectional view showing a schematic configuration of an exhaust manifold as a communication pipe according to the present embodiment.

  In FIG. 5, the exhaust manifold 54 includes a convex member group 55 (kinetic energy lowering mechanism) disposed on the opposing surface of the inner wall facing the TMP 18.

  The convex member group 55 includes a plurality of conical members 56 arranged so as to protrude from the inner wall of the exhaust manifold 54 toward the TMP 18, and each conical member 56 is a surface existing between the adjacent conical members 56. Is arranged to be minimal. Further, the conical member 56 may be formed from any of metal (for example, stainless steel and aluminum), resin, rubber, and the like.

  In the exhaust manifold 54, the particles that have rebounded toward the exhaust manifold 54 enter between the two conical members 56 adjacent to each other, and between the two conical members 56 and the side surfaces of the conical members 56 a plurality of times. Repeat the collision. The particles consume kinetic energy while repeatedly colliding with the side surface, and eventually drop toward the TMP 18. That is, the exhaust manifold 54 reduces the kinetic energy of the recoiled particles.

  According to the communication pipe according to the present embodiment, the exhaust manifold 54 includes the convex member group 55 including the plurality of conical members 56 disposed so as to protrude from the inner wall toward the TMP 18. The kinetic energy of the particles recoiled by the above can be reliably reduced by colliding with the conical member 56 in the convex member group 55 a plurality of times, and the recoiled particles can be dropped toward the TMP 18, thereby It is possible to prevent the splashed particles from entering the chamber 11.

  In the above-described communication pipe according to the present embodiment, the convex member group 55 is composed of a plurality of conical members 56, but the convex member group 55 is another convex convex member such as a pyramid or a cylinder. Further, it may be constituted by a convex member exhibiting any shape of a pyramid and a hemisphere. Thereby, a convex member can be shape | molded easily and the manufacturing cost of a communicating pipe | tube can be reduced.

  Further, in the communication pipe according to the present embodiment described above, the convex member group 55 is disposed on the facing surface facing the TMP 18 on the inner wall, but the convex member group is disposed on the surface not facing the TMP 18 on the inner wall. Also good. Most of the particles recoiled by the rotary blade 45 collide with the facing surface facing the TMP 18 on the inner wall of the communication pipe, but the collided particles also mirror-reflect and collide with the surface not facing the TMP 18. Thereby, the kinetic energy of a particle can be reduced also by the convex-shaped member group arrange | positioned on the surface which does not oppose TMP18.

  The communication pipe according to the present embodiment described above may include a concave member group made up of a plurality of concave members instead of the convex member group 55. In this case, particles that have recoiled by the rotary blade 45 are concave members. The kinetic energy of the invading particles can be reliably reduced by colliding with the concave member a plurality of times. Further, the concave shape of the concave member may be any of a cone, a pyramid, a cylinder, a prism, and a hemisphere. In this case, the concave member can be easily formed, and the manufacturing cost of the communication pipe can be reduced. it can.

  In addition, the communication pipe according to the present embodiment described above is not a convex member group composed of a plurality of convex members, but an impact absorbing material disposed on the facing surface facing the TMP 18 on the inner wall of the communication pipe, for example, soft An impact absorbing portion (not shown) made of rubber (kinetic energy lowering mechanism) may be provided. In this case, the impact absorbing portion absorbs the kinetic energy of the recoiled particles, and thus it is possible to reliably prevent the recoiled particles from entering the chamber 11.

  Note that the impact absorbing portion may be disposed on a surface of the inner wall that does not face the TMP 18. As described above, the particles recoiled by the rotary blade 45 also collide with the surface that does not face the TMP 18. Thereby, the kinetic energy of the particles can be absorbed also by the impact absorbing portion arranged on the surface not facing the TMP 18.

  Next, a communication pipe according to a fifth embodiment of the present invention will be described.

  This embodiment is basically the same in configuration and operation as the above-described fourth embodiment, and the fourth embodiment described above in that a fin-like member group is provided instead of the convex member group. And different. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

  FIG. 6 is a cross-sectional view showing a schematic configuration of an exhaust manifold as a communication pipe according to the present embodiment.

  In FIG. 6, the exhaust manifold 57 includes a fin-like member group 58 (kinetic energy lowering mechanism) disposed on the opposing surface of the inner wall facing the TMP 18.

  The fin-like member group 58 includes a plurality of fin-like members 59 arranged so as to protrude from the inner wall of the exhaust manifold 57 toward the TMP 18. Further, the fin-like member 59 may be formed from any of metal (for example, stainless steel or aluminum), resin, rubber, or the like.

  In the exhaust manifold 57, the particles rebounded toward the exhaust manifold 57 enter between the two adjacent fin-shaped members 59, and the side surfaces of the fin-shaped members 59 are interposed between the two fin-shaped members 59. Repeat the collision multiple times. The particles consume kinetic energy while repeatedly colliding with the side surface, and eventually drop toward the TMP 18. That is, the exhaust manifold 57 reduces the kinetic energy of the recoiled particles.

  According to the communication pipe according to the present embodiment, the exhaust manifold 57 includes the fin-like member group 58 including the plurality of fin-like members 59 disposed so as to protrude from the inner wall toward the TMP 18. The kinetic energy of the particles recoiled by 45 can be reliably reduced by colliding with the fin-like member 59 in the fin-like member group 58 a plurality of times, and the recoiled particles can be dropped toward the TMP 18, thereby , It is possible to prevent the recoiled particles from entering the chamber 11.

  Note that the fin-like member group may be disposed on a surface of the inner wall that does not face the TMP 18. As described above, the particles recoiled by the rotary blade 45 also collide with the surface that does not face the TMP 18. Thereby, the kinetic energy of a particle can be reduced also by the fin-shaped member group arrange | positioned on the surface which does not oppose TMP18.

  Next, a communication pipe according to a sixth embodiment of the present invention will be described.

  This embodiment is basically the same in configuration and operation as the above-described fourth embodiment, and is different from the above-described fourth embodiment in that a cotton-like body is provided instead of the convex member group. Different. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

  FIG. 7 is a cross-sectional view showing a schematic configuration of an exhaust manifold as a communication pipe according to the present embodiment.

  In FIG. 7, the exhaust manifold 74 includes a cotton-like body 75 (particle capturing mechanism) disposed on the inner wall facing the TMP 18.

  The cotton-like body 75 is an aggregate of linear metal (for example, stainless felt or steel wool) or chemical fiber (for example, fluororesin felt (specifically, Teflon (registered trademark) felt) or polyurethane fiber). These are joined to the inner wall surface of the exhaust manifold 74 by an adhesive or a hook (not shown) protruding from the exhaust manifold 74. Fluororesin includes polytetrafluoroethylene (PTFE), tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene / hexafluoropropylene copolymer (FEP), tetrafluoroethylene / ethylene copolymer (ETFE), polyvinylidene fluoride (PVDF), polychlorotrifluoroethylene (PCTFE), and the like are applicable.

  In the exhaust manifold 74, particles that rebound toward the exhaust manifold 74 enter the cotton-like body 75 and are captured by the cotton-like structure of the cotton-like body 75.

  FIG. 13 is a graph showing a result of confirming the generation state of particles in the chamber of the substrate processing apparatus to which the communication pipe according to the present embodiment is applied.

  In the graph of FIG. 13, the vertical axis indicates the particle scattered light intensity in the chamber, and the horizontal axis indicates time. Since the particle scattered light intensity is the intensity of light emission caused by the particles observed in the chamber 11, the intensity is proportional to the number of particles recoiled by the rotor 45 and entering the chamber 11. In the graph, the scattered light intensity before the countermeasure is the scattered light intensity observed in the chamber 11 of the substrate processing apparatus 10 to which the conventional exhaust manifold is applied, and the scattered light intensity after the countermeasure is the exhaust manifold 74 described above. Is the scattered light intensity observed in the chamber 11 of the substrate processing apparatus 10 to which is applied. The scattered light intensity was measured by an ICPM (In-chamber particle monitor) system shown in FIG.

  As shown in the graph of FIG. 13, before the countermeasure, strong scattered light intensity is observed during the OPEN operation and the CLOSE operation of the APC valve 17. As the slide valve of the APC valve 17 opens and closes, the deposit attached to the valve peels off, falls to the TMP 18, and is further recoiled by the rotating blades 45 in the TMP 18, and flows backward through the exhaust manifold. This is because the particles enter the inside as particles. On the other hand, after the countermeasure, the scattered light intensity hardly changes even during the OPEN operation and the CLOSE operation of the APC valve 17 and remains weak. This is because particles that are recoiled by the rotary blade 45 and flow backward through the exhaust manifold are captured by the cotton-like structure of the cotton-like body 75 and do not enter the chamber.

  According to the communication pipe according to the present embodiment, the exhaust manifold 74 includes the cotton-like body 75 disposed on the inner wall facing the TMP 18, so that the kinetic energy of the particles recoiled by the rotary blade 45 is It can be captured by the cotton-like structure of the cotton-like body 75, thereby preventing the recoiled particles from entering the chamber 11. Further, since the exhaust manifold 74 captures particles by the cotton-like body 75, particles falling on the TMP 18 can be reduced, and the adhesion rate of the particles to the rotary blades 45 of the TMP 18 can be reduced. Thereby, the exhaust manifold 74 can reduce the replacement frequency and the disassembly maintenance frequency of the TMP 18.

  Note that the cotton-like body may be disposed on a surface of the inner wall that does not face the TMP 18. As described above, the particles recoiled by the rotary blade 45 also collide with the surface that does not face the TMP 18. Thereby, particles can be captured also by the cotton-like body arranged on the surface not facing the TMP 18.

  Further, in the communication pipe according to the present embodiment described above, the cotton-like body is arranged on the inner surface as the particle capturing mechanism, but the particle capturing mechanism is not limited to this, for example, a mesh-like laminated structure, sponge, etc. It may be a porous body.

  Next, an exhaust pump according to a seventh embodiment of the present invention will be described.

  FIG. 8 is a cross-sectional view showing a schematic configuration of a TMP as an exhaust pump according to the present embodiment. The exhaust pump according to the present embodiment is basically the same as the configuration of the TMP 18 in FIG. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below. In FIG. 8, the upper side in the figure is referred to as “upper side”, and the lower side in the figure is referred to as “lower side”.

  In FIG. 8, a TMP 60 includes a cylindrical intake portion 61 disposed on the upper side of the cylindrical main body 44, that is, on the chamber 11 side with respect to the uppermost rotary blade group, and a reflector 62 disposed in the intake portion 61. (Reflecting device). Since the diameter of the intake section 61 is set smaller than the diameter of the main body 44, the intake section 61 controls the exhaust amount by the TMP 60. The reflecting plate 62 includes a disc-shaped first reflecting surface member 63 disposed on the upper side in the intake section 61 so as to face the uppermost rotary blade group of the TMP 60, and the first reflecting surface member 63. And an annular second reflecting surface member 64 whose surface angle is set so as to be directed to the rotating blade 45 of the TMP 60 and, in particular, to the rotating shaft 43.

  In the TMP 60, particles that have rebounded to the intake portion 61 by the rotating blade 45 come into contact with the reflection plate 62. The first reflecting surface member 63 of the reflecting plate 62 faces the rotary blade group of the TMP 60, and the second reflecting surface member 64 points to the rotating shaft 43 of the TMP 60. , Descend toward the rotor blade 45. That is, the reflecting plate 62 reflects the particles rebounded by the rotary blade 45 toward the rotary blade 45.

  According to the exhaust pump according to the present embodiment, the reflecting plate 62 is disposed in the intake portion 61 of the TMP 60 and points to the first reflecting surface member 63 facing the rotary blade group of the TMP 60 and the rotating shaft 43 of the TMP 60. Since the second reflecting surface member 64 is used, the particles recoiled by the rotating blades 45 can be reflected toward the rotating blades 45, thereby preventing the recoiled particles from entering the chamber 11. Can do.

  In the exhaust pump according to the present embodiment described above, the reflecting plate 62 is constituted by the disc-shaped first reflecting surface member 63 and the annular second reflecting surface member 64. The shape of the reflecting plate is as follows. It is not restricted to this, You may be comprised by the annular member whose cross section is circular arc shape.

  FIG. 9 is a view showing a modification of the exhaust pump according to this embodiment, FIG. 9A is a cross-sectional view showing the exhaust pump, and FIG. 9B is a view in FIG. 9A. It is a top view of the reflecting plate in an arrow direction.

  In FIG. 9A, a TMP 65 as an exhaust pump includes a reflecting plate 66 made of an annular member having an arcuate cross section disposed on the upper side of the intake portion 61, and a plane in the arrow direction in FIG. And a reflection member 67 arranged so as to correspond to the center hole position of the reflection plate 66. The reflecting member 67 is a conical member, and is disposed so that the tip thereof is directed downward, and is disposed on the lower side by a predetermined distance from the reflecting plate 66.

  The reflecting plate 66 and the reflecting member 67 reflect the particles recoiled by the rotating blade 45 to the rotating blade. However, since the reflecting plate 66 and the reflecting member 67 are separated from each other by a predetermined distance, the conductance of the exhaust gas in the TMP 60 is increased. There is no reduction. Therefore, it is possible not only to prevent the recoiled particles from entering the chamber 11, but also to prevent the particle discharge efficiency from being lowered.

  Next, an exhaust pump according to an eighth embodiment of the invention will be described.

  This embodiment is basically the same as the seventh embodiment described above in terms of its configuration and operation, and differs from the seventh embodiment described above in that it does not include a reflector. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

  FIG. 10 is a cross-sectional view showing a schematic configuration of a TMP as an exhaust pump according to the present embodiment.

  In FIG. 10, the TMP 68 includes a convex member group 69 (kinetic energy lowering mechanism) disposed on the inner wall of the intake portion 61.

  The convex member group 69 includes a plurality of wedge-shaped members 70 arranged so as to protrude from the inner wall of the intake portion 61 toward the central axis of the intake portion 61, and each wedge-shaped member 70 is directed to the rotation shaft 43 of the TMP 68. The reflecting surface is arranged so that the surface existing between the adjacent wedge-shaped members 70 is minimized. Further, the wedge-shaped member 70 may be formed of any of metal (for example, stainless steel and aluminum), resin, rubber, and the like.

  In the TMP 68, among the particles rebounded to the intake portion 61 by the rotary blade 45, the particles that contact the reflecting surface of the wedge-shaped member 70 of the convex member group 69 are reflected toward the rotation shaft 43. In addition, particles that have entered between the two wedge-shaped members 70 adjacent to each other in the convex member group 69 repeatedly collide with the side surfaces of each wedge-shaped member 70 between the two wedge-shaped members 70 to consume kinetic energy. Eventually, it falls toward TMP68. That is, the convex member group 69 reflects the particles recoiled by the rotary blade 45 toward the rotation shaft 43 and reduces the kinetic energy of the recoiled particles.

  According to the exhaust pump according to the present embodiment, the TMP 68 is composed of a plurality of wedge-shaped members 70 arranged so as to protrude from the inner wall of the intake portion 61 toward the central axis of the intake portion 61, and each wedge-shaped member 70 is Since it has a reflecting surface directed to the rotating shaft 43 of the TMP 68, the kinetic energy of the particles rebounded by the rotating blades 45 is reliably reduced by colliding with the wedge-shaped member 70 in the convex member group 69 a plurality of times, and the recoil is reduced. The fallen particles can be dropped toward the TMP 18 and the recoiled particles can be reflected toward the rotating shaft 43. Thereby, it is possible to prevent the recoiled particles from entering the chamber 11.

  In the exhaust pump according to the present embodiment described above, the convex member group 69 is composed of a plurality of wedge-shaped members 70. However, the convex member group 69 is another convex convex member such as a cone or a pyramid. , A cylindrical member, a prism, and a convex member that exhibits any shape of a hemisphere. Thereby, a convex-shaped member can be shape | molded easily and the manufacturing cost of an exhaust pump can be reduced.

  The above-described exhaust pump according to the present embodiment may include a concave member group including a plurality of concave members instead of the convex member group 69. In this case, particles that have rebounded by the rotary blades 45 are concave members. The kinetic energy of the invading particles can be reliably reduced by colliding with the concave member a plurality of times. In addition, the concave shape of the concave member may be any of a cone, a pyramid, a cylinder, a prism, and a hemisphere. In this case, the concave member can be easily formed, and the manufacturing cost of the exhaust pump can be reduced. it can.

  Further, the exhaust pump according to the present embodiment described above is not a convex member group made up of a plurality of wedge-like members, but an impact absorbing material arranged on the inner wall of the intake part 61, for example, an impact absorbing part made of soft rubber ( (Not shown) (kinetic energy lowering mechanism) may be provided. In this case, the impact absorbing portion absorbs the kinetic energy of the recoiled particles, and thus it is possible to reliably prevent the recoiled particles from entering the chamber 11.

  Next, an exhaust pump according to a ninth embodiment of the invention will be described.

  The present embodiment is basically the same in configuration and operation as the seventh embodiment described above, does not include a reflector, and is different in the arrangement of the rotary blade group and the stationary blade group. This is different from the seventh embodiment. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

  FIG. 11 is a cross-sectional view showing a schematic configuration of a TMP as an exhaust pump according to the present embodiment. In FIG. 11, the upper side in the drawing is referred to as “upper side”, and the lower side in the drawing is referred to as “lower side”.

  The TMP 71 protrudes from the inner peripheral surface of the main body 44 toward the rotary shaft 43, the rotary shaft 43, the main body 44, the intake portion 61, a plurality of blade-like rotary blades 72 protruding at right angles from the rotary shaft 43. A plurality of blade-like stationary blades 73.

  The plurality of rotary blades 72 project radially from the rotary shaft 43 to form a rotary blade group, and the plurality of stationary blades 73 are arranged at equal intervals on the same circumference of the inner peripheral surface of the main body 44, and the rotary shaft 43. Projecting toward the surface to form a stationary blade group. The TMP 71 has a plurality of rotary blade groups and stationary blade groups, and each stationary blade group is arranged at equal intervals along the rotation axis 43, and each rotary blade group is arranged between two adjacent stationary blade groups. The In the TMP 71, the uppermost stationary blade group is disposed above the uppermost rotary blade group. That is, the uppermost stationary blade group is disposed closer to the chamber 11 than the uppermost rotary blade group.

  Here, when some of the particles discharged from the chamber 11 reach the TMP 71, they collide with the rotating blades 72 that rotate at high speed and recoil upward, but in the TMP 71, Since the stationary blade group is arranged, the recoiled particles collide with the stationary blade 73 and are reflected toward the rotating blade 72.

  According to the exhaust pump according to the present embodiment, the TMP 71 has a plurality of rotor blade groups and stationary blade groups, and the uppermost stationary blade group is disposed closer to the chamber 11 than the uppermost rotor blade group. The particles recoiled by the blades 72 can be reflected toward the rotating blades 72 by the stationary blades 73, so that the recoiled particles can be reliably prevented from entering the chamber 11.

  Note that the above-described TMP 71 can be easily used together with the reflecting plate 62 in FIG. 8, the reflecting plate 66 in FIG. 9, or the convex member group 69 in FIG. The TMP 71 is preferably used in combination with the reflecting plate 62, the reflecting plate 66, or the convex member group 69 from the viewpoint of preventing entry into the light.

  Next, a reflecting device according to a tenth embodiment of the present invention will be described. The substrate processing apparatus to which the reflecting device according to the present embodiment is applied is basically the same as the substrate processing apparatus to which the reflecting device according to the first embodiment described above is applied. Therefore, the description is omitted.

  FIG. 14 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which the reflecting device according to the tenth embodiment of the present invention is applied.

  In FIG. 14, the substrate processing apparatus 76 has a recoil particle preventing plate 77 (reflecting device) disposed in the exhaust manifold 16.

  The recoil particle prevention plate 77 is a plate-like body made of resin, and has a reflection surface 78 formed by a flat surface, and the reflection surface 78 forms an acute angle with the rotation surface of the rotary blade 45 in the TMP 18, that is, reflection. Surface 78 points to TMP 18. The size of the recoil particle prevention plate 77 is set to a size that does not lower the conductance of the exhaust from the chamber 11 to the APC valve 17.

  When some of the particles discharged from the chamber 11 reach the TMP 18, they collide with the rotating blades 45 that rotate at a high speed and recoil toward the exhaust manifold 16. The recoiled particles enter the exhaust manifold 16 and come into contact with the recoil particle prevention plate 77 in the exhaust manifold 16. Since the recoil particle preventing plate 77 has the reflecting surface 78 directed to the TMP 18, the particles that contact the recoil particle preventing plate 77 are reflected toward the TMP 18.

  According to the reflection device according to the present embodiment, the recoil particle prevention plate 77 disposed in the exhaust manifold 16 has the reflection surface 78 that makes an acute angle with the rotation surface of the rotary blade 45 and directs to the TMP 18. The particles recoiled by the rotary blade 45 can be reliably reflected toward the TMP 18, thereby preventing the recoiled particles from entering the chamber 11. Further, since the reflection surface 78 is formed by a flat surface, the reflection direction of the recoiled particles can be easily controlled, and the recoil particle prevention plate 77 can be easily manufactured. The manufacturing cost of the splash particle preventing plate 77 can be reduced.

  In the exhaust system of the substrate processing apparatus 10 to which the reflection device, the communication pipe, or the exhaust pump according to each embodiment described above is applied, the shape of the vent hole of the baffle plate 15 is a circular hole. The shape of the pores is not limited to this, and is preferably a shape that can prevent the backflow of particles from the downstream side portion 14b of the exhaust passage 14 to the upstream side portion 14a.

  Specifically, as shown in FIGS. 12A to 12D, the upstream side portion 14a of the exhaust passage 14 is directed to the downstream side portion 14b, that is, from the chamber 11 toward the exhaust manifold 16 (51, 54, 57). The cross-sectional area may be reduced. Thereby, the backflow of the particles to the chamber 11 can be prevented without reducing the conductance of the exhaust from the chamber 11.

  Specifically, as shown in FIGS. 12E to 12H, the central axis of the vent hole is not parallel to the exhaust flow flowing from the top to the bottom in the drawing, but in the direction of the exhaust flow. The shape which opens diagonally may be sufficient. Accordingly, the recoiled particles can easily come into contact with the inner surface of the vent hole, and the particles can be reflected by the inner surface of the vent hole to the downstream side portion 14b of the exhaust passage 14, thereby preventing the backflow of the particles to the chamber 11. .

  Further, the reflection device, the communication pipe, and the exhaust pump according to each of the above-described embodiments are individually applied to the substrate processing apparatus 10. However, the reflection device, the communication pipe, and the exhaust pump can be freely combined, for example, The reflection device 36 in FIG. 2A, the exhaust manifold 54 in FIG. 5 and the TMP 68 in FIG. 10 may be applied to the substrate processing apparatus 10.

  Further, in each of the above-described embodiments, the exhaust manifold and the TMP have the particle reflecting device, the kinetic energy reduction mechanism, or the particle trapping mechanism. However, the downstream side portion 14b of the exhaust passage 14 has the above-described embodiments. May include a reflection device, a kinetic energy reduction mechanism, or a particle trapping mechanism.

  Further, in the substrate processing apparatus 10 of FIG. 1, the present inventors generated a large amount of particles in the chamber 11 and intentionally caused the particles to recoil by rotating the TMP rotor blade 45 at a high speed. It was confirmed that particles adhered to the entire inner wall of the exhaust manifold. This was thought to be due to the random movement of the recoiled particles. Therefore, it is preferable to dispose the above-described kinetic energy lowering mechanism or particle trapping mechanism on the entire inner wall of the exhaust manifold. Furthermore, not only the exhaust manifold but also the above-described kinetic energy lowering mechanism on the entire inner wall of the downstream side portion of the TMP or the exhaust passage. Alternatively, it is preferable to arrange a particle capturing mechanism. Further, when the exhaust system has a reflection device, it is preferable to arrange the above-described kinetic energy reduction mechanism or particle trapping mechanism on the entire surface of the reflection device.

The exhaust manifold, the TMP, and the kinetic energy lowering mechanism and the particle trapping mechanism disposed on the entire inner wall of the downstream side of the exhaust passage are not limited to those described above, and may be composed of those listed below.
1) A material in which fibrous substances are randomly entangled, a material in which fibrous substances are woven in a specific pattern, or a material having a large number of small spaces (hereinafter referred to as “particle capturing material”).
2) A material having flexibility capable of absorbing the impact caused by the collision of particles (hereinafter referred to as “impact absorber”).
3) A material to which particles can adhere (hereinafter referred to as “adhesive material”).
4) An assembly of a plurality of small rooms (see FIG. 15A) opening toward a space where particles rebound (see FIG. 15A) and an assembly of a plurality of grooves (hereinafter referred to as “particle introduction structure”).
In the particle trapping material, particles that have entered the particle trapping material repeatedly collide with a fibrous substance or a boundary surface of a small space. In addition, since the flight path of particles extends due to repeated collisions, friction between particles and gas molecules increases. Thereby, the momentum of the particles can be reduced, and as a result, the particles can be captured.

  In the impact absorbing material, the momentum of the particles can be reduced by absorbing the impact caused by the collision of the particles, and as a result, the particles can be captured. Moreover, by constructing a structure in which fibrous substances are randomly entangled using a shock absorber or a structure having a large number of small spaces, the number of collisions between particles and the shock absorber can be increased in the structure, Thereby, the momentum of the particles can be reliably reduced.

  In the adhesive material, the particles can be directly captured by the particles sticking to the adhesive material.

  In the particle introduction structure, the momentum of the particles can be reduced by repeating the collision between the particles introduced into the small room or the groove and the wall surface of the small room or the groove (see FIG. 15B). . In particular, when the particle introduction structure is provided on the surface of the particle trapping material, impact absorbing material or adhesive material, the momentum of the particle is reduced before the particles reach the particle capturing material, impact absorbing material or adhesive material. Therefore, the particle capturing material, the shock absorbing material or the adhesive material can easily capture the particles. Further, a particle trapping material, a shock absorbing material or an adhesive material may be provided on the surface of the small room or groove.

  The shape of the small chamber of the particle introduction structure is not limited to a rectangular shape as shown in FIG. 15A, but may be any shape having a wall surface and an opening. For example, the opening is triangular. The shape or hexagonal shape may be used. If the opening has a hexagonal shape, the particle introduction structure has a honeycomb structure.

In addition, the above-mentioned particle trapping material, shock absorbing material, adhesive material, and constituent material of the particle introduction structure flow through the heat resistance, plasma corrosion resistance (radical corrosion resistance, ion corrosion resistance), acid resistance and exhaust system. It is preferable to have sufficient rigidity against the exhaust flow. Specific examples of the constituent materials include metals (stainless steel, aluminum, silicon), ceramics (alumina (Al ₂ O ₃ ), yttrium (Y ₂ O ₃ )), quartz, organic compounds (PI, PBI, PTFE, PTCFE, PEI). CF rubber or silicon rubber). Further, a material obtained by subjecting a predetermined core material to surface treatment such as oxidation or thermal spraying (yttrium sprayed material, alumina sprayed material, anodized product) may be used.

  Of the above-described particle trapping material, impact absorbing material, adhesive material and particle introduction structure, the particle trapping material having the highest particle trapping efficiency is a particle trapping material made of a material in which fibrous substances are randomly entangled. Therefore, from the viewpoint of preventing particles from entering the chamber 11, as shown in FIGS. 16 and 17, the intake portion 61 of the TMP 60, the reflector 62, the exhaust manifold 16, and the downstream side portion 14 b of the exhaust passage 14 are arranged. It is preferable to provide a particle capturing mechanism 79 made of, for example, stainless felt or fluororesin felt on the entire inner wall.

  Further, since the recoiling particles are generated from the TMP rotor blades, it is preferable that the particle trapping mechanism is provided in the TMP intake portion. Particularly, when stainless steel felt or fluororesin felt is used as the particle trapping material, The particle trapping mechanism made of felt or felt of fluororesin may be provided not only on the TMP air intake, but also on the inner surface of the TMP body with the inner surface of the TMP body and the rotating blades separated.

In order to confirm the effect when the present inventors provide the above-described particle capturing mechanism, first, the wafer W is placed on the lower electrode 12 in the substrate processing apparatus 10 without providing the particle capturing mechanism. After introducing a large number of pseudo particles (SiO ₂ fine particles with a particle diameter of 1 μm) into the exhaust manifold after rotating the TMP rotor blade 45 at high speed, the number of particles adhering to the surface of the wafer W was measured. The number was 202. On the other hand, after a particle trapping mechanism made of stainless felt is provided on the entire inner wall of the exhaust manifold, the wafer W is placed on the lower electrode 12 and the TMP rotor 45 is rotated at a high speed, and then the exhaust manifold is placed on the exhaust manifold. After introducing a large number of pseudo particles, the number of particles adhering to the surface of the wafer W was measured, and the number was six. Thus, it has been found that the particles can be sufficiently prevented from entering the chamber 11 simply by providing a particle capturing mechanism made of stainless felt on the entire inner wall of the exhaust manifold.

  Next, an exhaust system cleaning method according to an embodiment of the present invention will be described.

  Prior to the present invention, the present inventors confirmed the cause of the generation of particles flowing into the TMP using the substrate processing apparatus 10 and found that the air release described below is the main factor.

Specifically, before opening the lid (not shown) of the chamber 11 and cleaning the inside of the chamber 11, when introducing the N ₂ gas into the chamber 11 from the shower head 26 and opening the chamber 11 to the atmosphere, Particles in the chamber 11 (deposits peeled off from the inner wall) wound up by the viscous flow of N ₂ gas reach the APC valve 17 via the exhaust passage 14 and the exhaust manifold 16. At this time, since the APC valve 17 closes (closes) the exhaust path from the exhaust manifold 16 to the TMP 18, particles that have reached the APC valve 17 are deposited on the APC valve 17 (on the chamber 11 side surface). Adhere to. After the cleaning of the chamber 11 is completed and the lid of the chamber 11 is closed, the inside of the chamber 11 is evacuated by an RP (Rotary Pump) (not shown) via the exhaust passage 14 and the exhaust manifold 16, and After the inside of the chamber 11 is depressurized to a predetermined pressure, the APC valve 17 is opened and the exhaust manifold 16 and the TMP 18 communicate with each other. At this time, particles accumulated and adhered on the APC valve 17 are separated from the APC valve 17. And flows into TMP18.

The present invention has been made based on the above findings. Note that the cause of generation of particles deposited and attached on the APC valve 17 is not limited to the above-described release to the atmosphere, and for example, peeling of particles attached to the inner surface of the exhaust manifold 16 is also applicable. Further, in the above knowledge, particles are deposited / attached on the APC valve 17, but the valve on which the particles are deposited / attached is not limited to the APC valve 17, and the particles are introduced into the chamber 11 when introducing N ₂ gas into the chamber 11. It was considered that the gas was deposited and adhered to the valve closest to the chamber 11 that shuts off the exhaust flow path from to the TMP 18. That is, it has been considered that particles may accumulate and adhere to a butterfly valve (not shown) that limits the flow rate of the gas flowing through the exhaust flow path, an isolation valve that will be described later, and the like.

  First, an exhaust system cleaning method according to an eleventh embodiment of the present invention will be described. The exhaust system cleaning method according to the present embodiment is applied to the substrate processing apparatus 10.

  FIG. 18 is a flowchart of wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment. In this process, when a deposit adheres to the inner wall or the like of the chamber 11 of the substrate processing apparatus 10 and the inside of the chamber 11 needs to be cleaned, an etching process is performed on a predetermined number of wafers W, followed by a certain production lot. It is executed between production lots or when the substrate processing apparatus 10 is idling for a long time.

  In FIG. 18, first, the APC valve 17 is closed, the exhaust flow path from the chamber 11 to the TMP 18 is closed, and the communication between the chamber 11 and the TMP 18 is shut off (step S10). At this time, particles accumulate and adhere on the APC valve 17. Further, after the APC valve 17 is closed, the TMP 18 (rotation of the rotary blade 45) stops at a predetermined timing.

  Next, the RP starts rough evacuation of the chamber 11 and the exhaust system (step S11). Here, the RP is arranged downstream of the TMP 18.

  Next, the APC valve 17 repeats opening and closing at least once, preferably 20 times or more (step S12). At this time, particles deposited and adhering on the APC valve 17 are peeled off by vibrations generated by repeated opening and closing of the APC valve 17. At this time, since the TMP 18 is not rotating, the particles peeled off from the APC valve 17 are not given kinetic energy even if they collide with the rotating blades 45 of the TMP 18, and the particles do not recoil. Then, the particles pass through the TMP 18 on the rough vacuum exhaust flow generated by the RP.

  Next, after the inside of the chamber 11 is depressurized to a predetermined pressure and the rough evacuation is completed (step S13), the APC valve 17 is kept open (step S14), and then the TMP 18 starts high speed rotation and the chamber 11 and high vacuuming of the exhaust system are started (step S15).

  Next, after the pressure in the chamber 11 is lowered to a predetermined low pressure, the wafer W is loaded into the chamber 11 (step S16), and this process is terminated.

  According to the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the APC valve 17 shuts off the communication between the chamber 11 and the TMP 18, and the RP evacuates the interior of the chamber 11 and the exhaust system. The APC valve 17 repeats opening and closing. Particles deposited and adhering to the APC valve 17 that shuts off the communication between the chamber 11 and the TMP 18 are separated from the APC valve 17 by vibrations generated by repeated opening and closing of the APC valve 17, and are removed by the exhaust flow of rough evacuation. As a result, it is possible to eliminate particles flowing into the TMP 18 from the APC valve 17 when the TMP 18 starts high-speed rotation after rough vacuuming, so that the occurrence of rebounding particles is prevented and the particles enter the chamber 11. Intrusion can be prevented.

In step S12 of the wafer transfer pretreatment described above, it is preferable to employ the following peeling promotion methods in order to promote the peeling of particles from the APC valve 17. 1) A radiant heater or the like is provided, and the APC valve 17 is heated by the radiant heater. 2) A brush that can move forward and backward to the exhaust passage is provided, and the APC valve 17 is cleaned by the brush. 4) A power source capable of applying a voltage to the APC valve 17 and its peripheral portion is provided, and electromagnetic power is generated in the APC valve 17 by the power source. ) APC with valve 17 opened in the vicinity and providing a bypass exhaust gas line communicating with the RP, generating a viscous flow due to the shock wave and the N ₂ gas resulting from the N ₂ gas introduced into the exhaust passage from the chamber 11 to the APC valve 17 The particles deposited and adhering to the APC valve 17 are peeled off by the shock wave, and the peeled particles are made viscous. By using at least one of the above-described peeling promotion methods, the particles that flow from the APC valve 17 to the TMP 18 when the TMP 18 starts high-speed rotation after the rough evacuation are reliably ensured. It can be lost.

  Further, the TMP 18 may be rotated at a low rotational speed while the APC valve 17 is repeatedly opened and closed. At this time, the particles peeled off from the APC valve 17 pass through the TMP 18 with almost no kinetic energy given even if they collide with the rotor blades 45 of the TMP 18. Further, the particles peeled off from the APC valve 17 by the negative pressure generated by the low speed rotation of the TMP 18 can be surely drawn into the TMP 18, and as a result, the particles can be prevented from remaining in the APC valve 17.

Further, while the APC valve 17 is repeatedly opened and closed, some of the particles separated from the APC valve 17 flow back through the exhaust passage from the chamber 11 to the APC valve 17, and the pressure in the chamber 11 is a predetermined low pressure. There is a possibility that the air will drift in the exhaust flow path even after it has fallen to a certain level, and further deposit on the inner wall of the exhaust manifold 16 or the like. Correspondingly, a shock wave and a viscous flow are introduced into the exhaust flow path by introducing a large amount of N ₂ gas into the chamber 11 while maintaining a rough evacuation by RP after step S11 and before step S15. Preferably it is generated. The shock wave separates particles accumulated on the inner wall of the exhaust manifold 16 and the like, the viscous flow entrains the separated particles, and the particles are removed from the exhaust flow path by the exhaust flow of rough vacuum. Thereby, particles or the like drifting in the exhaust passage due to repeated opening and closing of the APC valve 17 can be reliably removed. Here, the N ₂ gas in order to reliably generate a shock wave, it is necessary to introduce at about twice the pressure of the pressure in the chamber 11 during the N ₂ gas introduction, further, certainly generate viscous flow In order to achieve this, it is necessary to maintain the pressure in the chamber 11 after introducing the N ₂ gas at about 50 Pa or more.

  Further, while the APC valve 17 is repeatedly opened and closed, some of the particles separated from the APC valve 17 may flow back to the processing space S of the chamber 11. It is preferable to isolate it from the exhaust flow path composed of the downstream side portion 14b, the exhaust manifold 16 and the APC valve 17. As a method of isolating the processing space S from the exhaust passage, the vent hole of the baffle plate 15 may be configured to be openable and closable, and the vent hole may be closed in step S12. The APC valve 17 and the processing space in the exhaust passage may be closed. A freely openable open / close valve interposed between S may be provided, and the open / close valve may be closed in step S12. Thereby, it is possible to reliably prevent a part of the particles separated from the APC valve 17 from flowing back to the processing space S.

  In the exhaust system to which the above-described exhaust system cleaning method is applied, the APC valve 17 is disposed above the TMP 18, and particles separated from the APC valve 17 flow into the TMP 18 due to the exhaust flow and gravity of the rough vacuum drawn by the RP, and then Although discharged from the exhaust system, the APC valves 17 and the TMP 18 may be arranged in tandem along the horizontal direction. In this case, in step S12, when the APC valve 17 is closed, the pressure on the downstream side of the APC valve 17 is lower than the pressure on the upstream side due to the rough evacuation of RP, and when the APC valve 17 is opened, the downstream side of the APC valve 17 and Due to the pressure difference between the upstream side, the particles separated from the APC valve 17 are transported toward the TMP 18. The transported particles are discharged from the exhaust system by the exhaust flow of the rough evacuation by RP. Further, the separation of particles from the APC valve 17 is promoted by the pressure difference generated at this time.

In the exhaust system cleaning method according to the present embodiment described above, the valve that repeatedly opens and closes is the APC valve 17, but when the N ₂ gas is introduced, the exhaust flow path from the chamber 11 to the TMP 18 is blocked. If the valve closest to the chamber 11 is a valve other than the APC valve 17, for example, an isolation valve or a butterfly valve, it goes without saying that the isolation valve and the butterfly valve are repeatedly opened and closed.

Next, an exhaust system cleaning method according to a twelfth embodiment of the present invention will be described. The exhaust system to which the exhaust system cleaning method according to the present embodiment is applied differs from the exhaust system of the substrate processing apparatus 10 only in that an N ₂ introduction line and a bypass exhaust line are opened near the APC valve. The exhaust system cleaning method according to the present embodiment is different from the exhaust system cleaning method according to the eleventh embodiment in that the opening and closing of the APC valve is not repeated. Therefore, the description of the same configuration and operation as those in the eleventh embodiment will be omitted, and a description of the different configuration and operation will be given below.

  FIG. 19 is a cross-sectional view showing a schematic configuration of an exhaust system to which the exhaust system cleaning method according to the present embodiment is applied.

In FIG. 19, in addition to the exhaust passage 14, the baffle plate 15, the exhaust manifold 16, the APC valve 17 and the TMP 18, the exhaust system includes an N ₂ introduction line 80 which opens near the side of the slide valve of the APC valve 17, and an APC valve. And a bypass exhaust line 81 that opens to face the opening of the N ₂ introduction line 80 in the vicinity and side of the 17 slide valves. Specifically, both the N ₂ introduction line 80 and the bypass exhaust line 81 open toward the upstream surface (chamber 11 side) surface of the slide valve of the APC valve 17.

The N ₂ introduction line 80 is connected to an N ₂ gas supply unit (not shown), and introduces N ₂ gas toward the upstream surface of the slide valve of the APC valve 17 at a predetermined pressure. Further, the bypass exhaust line 81 is connected to the RP, and in particular exhausts gas present on the upstream surface of the slide valve of the APC valve 17 from the exhaust system.

Further, in the wafer transfer pretreatment as cleaning method of an exhaust system according to the present embodiment, instead of step S12 in the processing of FIG. 18 described above, N ₂ inlet line 80 is the N ₂ gas at a predetermined pressure APC valve The bypass exhaust line 81 discharges gas existing on the upstream surface of the slide valve of the APC valve 17 from the exhaust system. At this time, a viscous flow (indicated by a white arrow in the figure) is generated on the upstream surface of the slide valve of the APC valve 17 by the N ₂ gas introduced from the N ₂ introduction line 80, and the viscous flow is generated by the APC valve. The particles deposited and attached to 17 are peeled off, and further, the peeled particles are entrained. Further, the particles involved in the viscous flow are discharged from the exhaust system via the bypass exhaust line 81 by the exhaust flow of the rough evacuation of RP.

According to the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the APC valve 17 shuts off the communication between the chamber 11 and the TMP 18, and the RP evacuates the interior of the chamber 11 and the exhaust system. , N ₂ introduction line 80 generates a viscous flow on the upstream surface of the slide valve, and bypass exhaust line 81 exhausts the gas on the upstream surface of the slide valve from the exhaust system. Particles deposited and adhering to the upstream surface of the slide valve of the APC valve 17 that shuts off the communication between the chamber 11 and the TMP 18 are separated from the APC valve 17 by the viscous flow and removed by the exhaust flow of the rough vacuum. Thereby, when the TMP 18 starts high-speed rotation, particles flowing from the APC valve 17 to the TMP 18 can be eliminated. Therefore, the occurrence of particles that recoil is prevented and the entry of particles into the chamber 11 is prevented. be able to.

  Next, an exhaust system cleaning method according to a thirteenth embodiment of the present invention will be described. The exhaust system to which the cleaning method of the exhaust system according to the present embodiment is applied is a substrate processing apparatus in that it includes a valve that can move forward and backward from the exhaust flow path upstream of the APC valve and captures and holds particles. The only difference from the exhaust system of the apparatus 10 is that the exhaust system cleaning method according to the present embodiment is different from the exhaust system cleaning method according to the eleventh embodiment in that the opening and closing of the APC valve is not repeated. is there. Therefore, the description of the same configuration and operation as those in the eleventh embodiment will be omitted, and a description of the different configuration and operation will be given below.

  FIG. 20 is a cross-sectional view showing a schematic configuration of an exhaust system to which the exhaust system cleaning method according to the present embodiment is applied.

  In FIG. 20, the exhaust system includes an exhaust passage 14, a baffle plate 15, an exhaust manifold 16, an APC valve 17, and a TMP 18, and a particle trap that can move forward and backward from the exhaust passage from the chamber 11 to the APC valve 17 upstream of the APC valve 17. A valve 82 and a cleaning chamber 83 that can accommodate the particle capturing valve 82 are provided. The particle trapping valve 82 substantially covers the upstream surface of the slide valve of the APC valve 17 when entering the exhaust passage, and is housed in the cleaning chamber 83 when leaving the exhaust passage. In addition, the particle trapping valve 82 includes a wall portion 84 that protrudes upstream at the peripheral edge portion as a particle holding mechanism.

  Further, in the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, before the APC valve 17 shuts off the communication between the chamber 11 and the TMP 18, the particle trapping valve 82 enters the exhaust flow path and enters the chamber. 11 and TMP18 communication is cut off. Here, since the particle trapping valve 82 includes a wall portion 84 projecting upstream at the peripheral edge portion, the particle trapping valve 82 captures and holds particles flowing in the exhaust passage from the chamber 11 toward the TMP 18. Further, after step S12 and before step S15 in the process of FIG. 18, the particle trapping valve 82 leaves the exhaust passage. At this time, the particles held in the particle trapping valve 82 are retreated from the exhaust path by being carried into the cleaning chamber 83 together with the particle trapping valve 82, and further, the cleaning mechanism (not shown) provided in the cleaning chamber 83 is used for the exhaust system. It is discharged outside.

  According to the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the particle trapping valve 82 blocks communication between the chamber 11 and the TMP 18, and the particle trapping valve 82 flows from the chamber 11 toward the TMP 18. Further, the particle trapping valve 82 exits from the exhaust passage while retaining particles. Thereby, when the TMP 18 starts high-speed rotation, particles flowing from the APC valve 17 to the TMP 18 can be eliminated. Therefore, the occurrence of particles that recoil is prevented and the entry of particles into the chamber 11 is prevented. be able to.

  In the present embodiment described above, the particle trapping valve 82 includes the wall portion 84 that protrudes upstream at the peripheral edge as the particle retaining mechanism. However, the particle retaining mechanism is not limited to this, for example, the particle capturing valve 82 An assembly of a plurality of small rooms and a member with a high coefficient of friction covering the upstream surface of the particle trapping valve 82 as shown in FIG. Further, the particle trapping valve 82 itself may be formed of a member having a high friction coefficient.

  Next, an exhaust system cleaning method according to a fourteenth embodiment of the present invention will be described. The exhaust system to which the exhaust system cleaning method according to the present embodiment is applied differs from the exhaust system of the substrate processing apparatus 10 only in that an isolation valve is provided between the APC valve and the TMP. Therefore, the description of the same configuration and operation as those in the eleventh embodiment will be omitted, and a description of the different configuration and operation will be given below.

  FIG. 21 is a cross-sectional view showing a schematic configuration of an exhaust system to which the exhaust system cleaning method according to the present embodiment is applied.

  In FIG. 21, the exhaust system includes an exhaust path 14, a baffle plate 15, an exhaust manifold 16, an APC valve 17 (open / close valve disposed on the processing chamber side) and TMP 18, and an isolator disposed between the APC valve 17 and TMP 18. A rate valve 85 (an on-off valve disposed on the exhaust pump side) is provided. The isolated valve 85 has a slide valve that can block communication between the APC valve 17 and the TMP 18. The exhaust system also includes a bypass exhaust line 86 that opens in the vicinity and side of the slide valve of the isolated valve 85. A bypass exhaust line 86 is connected to the RP and exhausts gas present on the upstream surface of the slide valve of the isolate valve 85 from the exhaust system.

  In the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the isolation valve 85 blocks the communication between the APC valve 17 and the TMP 18 before step S12 in the above-described process of FIG. 86 starts rough evacuation of the exhaust passage from the APC valve 17 to the isolate valve 85. At this time, the particles peeled off from the APC valve 17 that repeatedly opens and closes flow toward the TMP 18 by the exhaust flow of gravity or rough evacuation, but the isolation valve 85 blocks the communication between the APC valve 17 and the TMP 18, so The slide valve of the rate valve 85 prevents particles from flowing into the TMP 18. Further, the particles blocked from flowing into the TMP 18 are discharged from the exhaust system via the bypass exhaust line 86 by the exhaust flow of the rough vacuum. Next, after step S13 and before step S15, the isolation valve 85 restores the communication between the APC valve 17 and the TMP 18.

  According to the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the APC valve 17 shuts off the communication between the chamber 11 and the TMP 18, and the isolated valve 85 shuts off the communication between the APC valve 17 and the TMP 18. The bypass exhaust line 86 evacuates the exhaust passage from the APC valve 17 to the isolate valve 85, and then the APC valve 17 repeatedly opens and closes. Particles deposited and adhering on the APC valve 17 that shuts off the communication between the chamber 11 and the TMP 18 are peeled off from the APC valve 17 as the APC valve 17 repeatedly opens and closes. The separated particles are discharged from the exhaust system via the bypass exhaust line 86 by the exhaust flow of the rough vacuum. Thereby, when the TMP 18 starts high-speed rotation, particles flowing from the APC valve 17 to the TMP 18 can be eliminated.

  Further, the particles peeled off from the APC valve 17 flow toward the TMP 18 due to the exhaust flow of the rough vacuum, but the isolation valve 85 blocks the communication between the APC valve 17 and the TMP 18, so that the slide of the isolation valve 85 is performed. The valve prevents particles from flowing into the TMP 18. Thereby, the inflow of particles into the TMP 18 can be surely prevented and the entry of particles into the chamber 11 can be prevented.

  In the above-described embodiment, the isolated valve 85 is disposed between the APC valve 17 and the TMP 18 in the exhaust system. However, the APC valve 17 may be disposed between the isolated valve 85 and the TMP 18. In this case, particles accumulate and adhere to the isolation valve 85, and the isolation valve 85 repeats opening and closing. Further, the APC valve 17 blocks communication between the isolate valve 85 and the TMP 18 while the isolate valve 85 repeatedly opens and closes.

Next, an exhaust system cleaning method according to a fifteenth embodiment of the present invention will be described. The exhaust system to which the exhaust system cleaning method according to the present embodiment is applied differs from the exhaust system according to the fourteenth embodiment only in that it has an N ₂ introduction line, and the exhaust system according to the present embodiment. The system cleaning method is different from the exhaust system cleaning method according to the fourteenth embodiment in that the opening and closing of the APC valve is not repeated. Therefore, the description of the same configuration and operation as those in the fourteenth embodiment will be omitted, and the description of the different configuration and operation will be given below.

  FIG. 22 is a diagram showing a schematic configuration of an exhaust system to which the exhaust system cleaning method according to the present embodiment is applied. FIG. 22 (A) is a sectional view of the exhaust system, and FIG. 22 (B). FIG. 6 is a cross-sectional view of a modification of the exhaust system.

In FIG. 22A, the exhaust system opens in the vicinity of the slide valve of the APC valve 17 in addition to the exhaust passage 14, the baffle plate 15, the exhaust manifold 16, the APC valve 17, the isolate valve 85, the TMP 18, and the bypass exhaust line 86. N ₂ introduction line 87 is provided.

The N ₂ introduction line 87 opens toward the upstream side (chamber 11 side) surface of the slide valve of the APC valve 17. The N ₂ introduction line 87 is connected to an N ₂ gas supply unit (not shown), and introduces N ₂ gas toward the upstream surface of the slide valve of the APC valve 17 at a predetermined pressure.

Further, in the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the isolation valve 85 blocks the communication between the APC valve 17 and the TMP 18 before step S12 in the above-described process of FIG. Further, instead of step S12 in the process of FIG. 18, the APC valve 17 is opened to restore the communication between the chamber 11 and the isolation valve 85, and the N ₂ introduction line 87 supplies N ₂ gas at a predetermined pressure to the APC valve 17. While being introduced towards the slide valve, a bypass exhaust line 86 exhausts the gas present on the upstream surface of the slide valve of the isolate valve 85 from the exhaust system. When the APC valve 17 is opened, the particles deposited and adhering on the APC valve 17 are separated and flow toward the isolation valve 85 by the exhaust flow of the rough vacuum. At this time, a viscous flow that passes through the APC valve 17 and flows on the upstream surface of the slide valve of the isolation valve 85 is generated by the N ₂ gas introduced from the N ₂ introduction line 87. Particles separated from the valve 17 are entrained. Further, the particles involved in the viscous flow are discharged from the exhaust system via the bypass exhaust line 86 by the exhaust flow of the rough vacuum. Next, after step S13 and before step S15, the isolation valve 85 restores the communication between the APC valve 17 and the TMP 18.

According to the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the APC valve 17 shuts off the communication between the chamber 11 and the TMP 18, and the isolated valve 85 shuts off the communication between the APC valve 17 and the TMP 18. , RP evacuates the chamber 11 and the exhaust system. Thereafter, the APC valve 17 is opened to restore the communication between the chamber 11 and the isolated valve 85, and the N ₂ introduction line 87 passes through the APC valve 17 and flows on the upstream surface of the slide valve of the isolated valve 85. The bypass exhaust line 86 evacuates the exhaust passage from the APC valve 17 to the isolate valve 85. When the APC valve 17 that shuts off the communication between the chamber 11 and the TMP 18 is opened, the particles separated from the APC valve 17 are caught in the viscous flow and removed by the exhaust flow of the rough vacuum. Thereby, when the TMP 18 starts high-speed rotation, particles flowing from the APC valve 17 to the TMP 18 can be eliminated. Therefore, the occurrence of particles that recoil is prevented and the entry of particles into the chamber 11 is prevented. be able to.

Further, an exhaust system which is a modification of the exhaust system shown in FIG. 22 (A) is an N ₂ introduction line 87a which opens in the vicinity of the slide valve of the isolated valve 85 and on the side as shown in FIG. 22 (B). Is provided. The N ₂ introduction line 87a opens toward the upstream surface of the slide valve of the isolate valve 85, and introduces N ₂ gas toward the upstream surface of the slide valve of the isolate valve 85 at a predetermined pressure. Accordingly, the N ₂ introduction line 87 generates a viscous flow that flows on the upstream surface of the slide valve of the isolation valve 85.

  The exhaust system cleaning method according to the present embodiment described above can also be applied to the exhaust system shown in FIG. 22B, whereby the APC valve 17 moves to the TMP 18 when the TMP 18 starts high-speed rotation. Since the inflowing particles can be eliminated, the occurrence of rebounding particles can be prevented and the entry of particles into the chamber 11 can be prevented.

In the above-described embodiment, the isolated valve 85 is disposed between the APC valve 17 and the TMP 18 in the exhaust system. However, the APC valve 17 may be disposed between the isolated valve 85 and the TMP 18. In this case, the bypass exhaust line 86 and the N ₂ introduction line 87 are opened near the slide valve of the APC valve 17. Further, particles are deposited and adhered to the isolation valve 85, and the particles are peeled when the isolation valve 85 is opened. The separated particles are entrained in a viscous flow flowing on the upstream surface of the slide valve of the APC valve 17 and are discharged from the exhaust system via the bypass exhaust line 86 by the exhaust flow of the rough vacuum.

  Next, an exhaust system cleaning method according to a sixteenth embodiment of the present invention will be described. The exhaust system to which the exhaust system cleaning method according to the present embodiment is applied differs from the exhaust system according to the fourteenth embodiment in that the isolated valve has the same configuration as the particle trapping valve 82 in FIG. The exhaust system cleaning method according to the present embodiment is only different from the exhaust system cleaning method according to the fourteenth embodiment in that the opening and closing of the APC valve is not repeated. Therefore, the description of the same configuration and operation as those in the fourteenth embodiment will be omitted, and the description of the different configuration and operation will be given below.

  In the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, step 10 in the process of FIG. 18 described above is skipped, and the isolation valve enters the exhaust flow path to connect the chamber 11 and the TMP 18. Cut off. Here, since the isolation valve includes a wall portion that protrudes upstream at the peripheral edge portion, the exhaust valve captures and holds particles that flow from the chamber 11 toward the TMP 18. Further, after step S12 and before step S15 in the process of FIG. 18, the isolation valve exits from the exhaust passage. At this time, the particles held in the isolation valve retreat from the exhaust path together with the particle trapping valve 82, and are further discharged to the outside of the exhaust system by the cleaning mechanism provided in the cleaning chamber.

  According to the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the isolation valve blocks communication between the chamber 11 and the TMP 18, and the isolation valve captures particles flowing from the chamber 11 toward the TMP 18. Further, the isolation valve exits from the exhaust passage while holding the particles. Thereby, when the TMP 18 starts high-speed rotation, particles flowing from the APC valve 17 to the TMP 18 can be eliminated. Therefore, the occurrence of particles that recoil is prevented and the entry of particles into the chamber 11 is prevented. be able to.

  In the present embodiment described above, the isolation valve includes the wall portion 84 that protrudes upstream in the peripheral portion. However, the isolation valve is an aggregate of a plurality of small rooms as shown in FIG. Needless to say, a member having a high coefficient of friction covering the upstream surface may be provided.

  Note that the exhaust system cleaning methods according to the eleventh to sixteenth embodiments described above are not limited to APC valves and isolated valves, but all the exhaust channels existing in the exhaust flow path from the chamber 11 to the TMP 18. Applicable to valves. Furthermore, the exhaust system cleaning methods according to the eleventh to sixteenth embodiments described above may be used in combination with the reflectors, communication pipes, and exhaust pumps according to the above-described embodiments.

In order to confirm the effect when the inventors performed the wafer pre-loading process of FIG. 18 described above, the same process was performed in the substrate processing apparatus 10. At this time, a large number of pseudo particles (SiO ₂ fine particles having a particle diameter of 1 μm) were dispersed on the surface of the APC valve 17 on the upstream side of the slide valve before step S11.

  Thereafter, the high-speed rotation of the TMP 18 was started, and each time the APC valve 17 was repeatedly opened and closed, the number of particles that rebounded to the processing space S of the chamber 11 was measured by an ICPM (In-Chamber Particle Monitor) described later. The number of particles was measured twice.

  FIG. 23 is a schematic configuration diagram of an ICPM capable of observing particles existing in the processing space of the chamber.

  In FIG. 23, the ICPM 90 includes a pair of laser light transmission windows 91a and 91b disposed symmetrically on the side wall of the chamber 11 with the lower electrode 12 interposed therebetween, and a laser irradiated from the laser light transmission window 91a to the laser light transmission window 91b. A chamber 11 having an observation window 92 arranged on the side wall of the chamber 11 that can observe light from the side, a reflection mirror 93 arranged in a straight line with the laser light transmission windows 91a and 91b, and the reflection mirror 93 An SHG-YAG laser light oscillator 94 that emits laser light toward the laser beam, a pulse generator 95 that determines a pulse of the laser light emitted by the SHG-YAG laser light oscillator 94, and a laser light transmission window through an observation window 92 Control of the operation of each component of the CCD camera 96 and the ICPM that captures an image of the laser beam irradiated from the laser beam transmission window 91b to the laser beam transmission window 91b That includes a PC97, and a beam damper 98 for absorbing the laser light applied to the outer chamber 11 through the laser beam transmission window 91b.

  In the ICPM 90, when the laser light irradiated from the laser light transmission window 91a to the laser light transmission window 91b recoils and enters the processing space S, scattered light is generated. The scattered light intensity at this time is proportional to the number of particles passing through the laser light.

  FIG. 24 is a graph showing the number of particles present in the processing space of the chamber measured by ICPM.

  In the graph of FIG. 24, the horizontal axis indicates the number of times the APC valve 17 is opened and closed, and the vertical axis indicates the scattered light intensity. The first measurement result is indicated by “♦”, and the second measurement result is indicated by “▲”.

  From this graph, it has been found that if the opening and closing of the APC valve 17 is repeated two or more times, no recoil particles are generated. Accordingly, by repeatedly opening and closing the APC valve 17 before loading the wafer into the chamber 11, particles deposited and adhered on the APC valve 17 can be removed, and thus the particles enter the processing space S of the chamber 11. It was found that the intrusion can be prevented.

  Next, a substrate processing apparatus according to a seventeenth embodiment of the present invention is described. The substrate processing apparatus according to the present embodiment is only different from the substrate processing apparatus to which the reflection apparatus according to the first embodiment is applied in that a particle capturing component is provided instead of the reflection apparatus. Therefore, the description of the same configuration and operation as those in the first embodiment will be omitted, and a description of the different configuration and operation will be given below.

  FIG. 25 is a sectional view showing a schematic configuration of the substrate processing apparatus according to the seventeenth embodiment of the present invention.

  In FIG. 25, the substrate processing apparatus 100 is erected from a cylindrical upper cover 101 that covers the side portion of the lower electrode 12 that moves up and down in the chamber 11, and a bottom surface of the downstream side portion 14b of the exhaust passage 14, and a bellows cover. 25 and a lower cover 102 covering the periphery of 25. The lower cover 102 is disposed concentrically with the upper cover 101. The outer diameter of the lower cover 102 is set smaller than the inner diameter of the upper cover 101 by a predetermined value to prevent the upper cover 101 from interfering with the lower cover 102 when the lower electrode 12 is lowered.

  Further, as described above, since the outer diameter of the lower cover 102 is set smaller than the inner diameter of the upper cover 101 by a predetermined value, a predetermined gap is generated between the lower cover 102 and the upper cover 101, and the processing space S The particles P generated in the flow and flowing into the downstream side portion 14b of the exhaust passage 14 may pass through the predetermined gap and adhere to the bellows cover 25 (particle generation source). The particles P adhering to the bellows cover 25 are peeled off from the bellows cover 25 as the lower electrode 12 moves up and down, and further pass through a predetermined gap and scatter to the downstream side portion 14b (see arrows in the figure). .

  In the present embodiment, in view of this, the particle capturing component 103 is disposed around the bellows cover 25, more specifically around the lower cover 102. The particle trap 103 is a cylindrical core member 104 that stands from the bottom surface of the downstream side portion 14 b of the exhaust passage 14 and covers the periphery of the lower cover 102, and a stainless felt 105 (see FIG. 5) that is disposed so as to cover the surface of the core member 104. Or a fluororesin felt). Further, since the height of the core material 104 is set higher than the height of the lower cover 102, the particle capturing component 103 exists on the scattering path of the particles P that pass through a predetermined gap and scatter to the downstream side portion 14b. Further, since stainless felt is a material in which fibrous substances are randomly entangled, particles can be physically captured and, as described above, the particle capturing efficiency is high. Therefore, the particle capturing component 103 can efficiently capture the scattered particles P regardless of whether the particles P are charged or not.

The constituent material of the element covering the core material 104 in the particle capturing component 103 is not limited to stainless felt, and may be composed of the following materials.
1) Particle capturing material 2) Impact absorbing material 3) Adhesive material In the particle capturing material, the particles P that have entered the particle capturing material repeatedly collide with the fibrous material and the boundary surface of the small space. Further, since the flight path of the particles P is extended by repeated collisions, the friction between the particles P and gas molecules increases. Thereby, the momentum of the particle P can be reduced, and as a result, the particle P can be captured.

  In the impact absorbing material, the momentum of the particles P can be reduced by absorbing the impact caused by the collision of the particles P, and as a result, the particles P can be captured. In addition, by forming a structure in which fibrous substances are randomly entangled using a shock absorber or a structure having a large number of small spaces, the number of collisions between the particles P and the shock absorber can be increased in the structure. Thus, the momentum of the particles P can be reliably reduced.

  In the adhesive material, the particles P can be directly captured by the particles P sticking to the adhesive material.

In addition, it is preferable that the constituent materials of the particle trapping material, the shock absorbing material, and the adhesive material described above have heat resistance, plasma corrosion resistance, acid resistance, and sufficient rigidity against the exhaust flow flowing in the exhaust system. Specific examples of materials include metals (stainless steel, aluminum, silicon), ceramics (alumina (Al ₂ O ₃ ), yttrium (Y ₂ O ₃ )), quartz, organic compounds (PI, PBI, PTFE, PTCFE, PEI, CF-based rubber or silicon-based rubber), and a specific core material subjected to surface treatment such as oxidation or thermal spraying (yttrium sprayed material, alumina sprayed material, anodized material) may be used. The above-described exhaust manifold, TMP, and kinetic energy lowering mechanism disposed on the entire inner wall of the downstream side of the exhaust passage and Is the same as the tickle capture mechanism.

  According to the substrate processing apparatus of the present embodiment, the particle capturing component 103 including the core material 104 and the stainless felt 105 covering the surface of the core material 104 is disposed on the scattering path of the particles P scattered from the bellows cover 25. Therefore, not only the charged particles P but also the uncharged particles P can be captured. Further, since the particle capturing component 103 is only disposed on the downstream side portion 14b of the exhaust passage 14, the particles P in the chamber 11 can be captured efficiently without greatly changing the configuration of the chamber 11. In addition, since the particle capturing component 103 can rebound from the TMP 18 and capture particles that have entered the downstream side portion 14b of the exhaust passage 14, the particles can be prevented from entering the processing space S.

  The core material 104 of the particle capturing component 103 described above has a cylindrical shape, but the shape of the core material 104 is not limited to this, and may be a rod shape. In this case, it is preferable that a plurality of rod-shaped particle trapping parts are arranged on the circumference so as to surround the lower cover 102.

  In the substrate processing apparatus according to the present embodiment, the particle generation source is the bellows cover 25 which is a movable part. However, the movable part as the particle generation source is not limited to this and is disposed in the processing space S or the exhaust path 14. The particle capturing component may be disposed on the scattering path of particles scattered from the movable component, for example, in the vicinity of these movable components.

  Further, the particle generation source is not limited to a movable part, but a view port 106 that may be provided for observing a recess facing the processing space S or the exhaust path 14, for example, the inside of the processing space S from the outside. There may be. Deposits easily adhere to such depressions, and the deposits are separated into particles by vibration of the chamber 11, the viscous force of the gas flowing in the chamber 11, or electromagnetic stress caused by the electric field in the chamber 11. , Fly as it is. In this case, it is preferable to arrange the particle capturing component in the vicinity of the depression (viewport 106).

The inventors measured the number of particles adhering to the surface of the wafer W according to the following procedure in order to confirm the effect of providing the above-described particle capturing component.
1) First, the number of particles adhering to the surface of the wafer W was measured by a foreign substance inspection apparatus before the wafer W was loaded into the chamber 11 of the substrate processing apparatus 100 in which no particle capturing component was provided. 2) Chamber 11, the wafer W is loaded into the processing space S, and particles are scattered into the processing space S from a port (not shown) opened in the processing space S. 3) The wafer W is unloaded from the chamber 11 and adhered to the surface of the wafer W. The number of particles was measured with a foreign substance inspection apparatus, and the number of particles was calculated by subtracting the number measured in 1) above from the measured number. 4) Next, on the scattering path of particles from the port in the processing space S The particle capture component was installed in Further, the surface of the wafer W was cleaned, and the number of particles adhering to the surface of the wafer W after the cleaning was measured with a foreign substance inspection apparatus. 5) A port for loading the wafer W into the chamber 11 and opening it into the processing space S. 6) Particles are scattered from the processing space S to the processing space 6) The wafer W is unloaded from the chamber 11, and the number of particles adhering to the surface of the wafer W is measured by a foreign substance inspection apparatus. The number of particles increased was obtained by subtracting the number measured in step 1). The particle diameter measured in the above 1) to 6) was 0.1 μm or more.

  As a result of executing the above procedure, the number of particles increased when the particle capturing component was not provided was 202, whereas the number of particles increased when the particle capturing component was provided was 6. It was. Thus, it has been found that the particles in the chamber 11 can be efficiently captured simply by providing the particle capturing component on the particle scattering path from the port.

  Next, an exhaust system cleaning method according to an eighteenth embodiment of the present invention will be described. The exhaust system cleaning method according to the present embodiment is different from the exhaust system cleaning method according to the eleventh embodiment only in that the APC valve is repeatedly opened and closed while rotating the TMP rotor blades. . Therefore, the description of the same configuration and operation as those in the eleventh embodiment will be omitted, and a description of the different configuration and operation will be given below.

  FIG. 26 is a flowchart of wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment. Similarly to the process of FIG. 18, in the present process, when a deposit is attached to the inner wall of the chamber 11 of the substrate processing apparatus 10 and the inside of the chamber 11 needs to be cleaned, a certain production lot and a subsequent production lot It is executed during a period of time or when the idling state of the substrate processing apparatus 10 continues for a long time.

  In FIG. 26, first, with the rotating blade 45 of the TMP 18 rotated at a high speed, the APC valve 17 is closed to close the exhaust flow path from the chamber 11 to the TMP 18 to block communication between the chamber 11 and the TMP 18 (step S30). ). At this time, particles accumulate and adhere on the APC valve 17. Unlike the processing of FIG. 18 described above, here, the rotation of the rotary blade 45 of the TMP 18 is not stopped.

Next, the particles in the chamber 11 are removed (cleaning in the closed chamber) while the lid of the chamber 11 is closed (step S31). As a method for cleaning the inside of the chamber, N ₂ gas is suddenly introduced into the chamber 11 to generate a shock wave, particles are peeled off from the inner wall of the chamber 11 by the shock wave, and the peeled particles are introduced into the N _2. A method of discharging from the chamber 11 by a viscous flow of gas, a method of applying a voltage to the inner wall of the chamber 11 and peeling off particles from the inner wall of the chamber 11 by electromagnetic stress, or blowing a high-temperature gas to the inner wall of the chamber 11 For example, a method of peeling and removing particles from the inner wall of the chamber 11 by thermal stress is applicable.

  Next, removal of particles in the exhaust passage 14 and the exhaust manifold 16 (cleaning of the exhaust passage, etc.) is performed (step S32). As a method for cleaning the exhaust path or the like, the same method as the above-described chamber cleaning method is applicable.

  Next, the APC valve 17 repeats opening and closing at least once, preferably 20 times or more (step S33). At this time, particles deposited and adhering on the APC valve 17 are peeled off by vibrations generated by repeated opening and closing of the APC valve 17. At this time, since the rotating blades 45 of the TMP 18 are rotating at high speed, the particles separated from the APC valve 17 collide with the rotating blades 45 of the TMP 18 and recoil, enter the chamber 11 and enter the chamber 11. Stay on.

  Next, the particles in the chamber 11 are removed by the same method as in step S31 (step S34), and then the wafer W is loaded into the chamber 11 (step S35), and this process ends.

  According to the wafer transfer pretreatment as the exhaust system cleaning method according to the present embodiment, the APC valve 17 shuts off the communication between the chamber 11 and the TMP 18, and the APC valve 17 is kept rotating while the rotor blade 45 of the TMP 18 is rotated. Opening and closing is repeated, and then the particles in the chamber 11 are removed, and the wafer W is loaded into the chamber 11. Particles deposited and adhering to the APC valve 17 that shuts off the communication between the chamber 11 and the TMP 18 are peeled off from the APC valve 17 as the APC valve 17 repeatedly opens and closes. The peeled particles enter the inside of the TMP 18, and the invading particles collide with the rotating rotor blade 45 and recoil to the chamber 11, but before the wafer W is loaded into the chamber 11, The particles that have rebounded to 11 are removed by removing the particles in the chamber 11. As a result, the particles accumulated and adhered to the APC valve 17 and the particles in the chamber 11 before the wafer W is carried into the chamber 11 can be removed. As a result, generation of particles that recoil after the wafer W is loaded into the chamber 11 can be prevented, and entry of particles into the chamber 11 can be prevented.

  Further, in the exhaust system cleaning method according to the present embodiment, since it is not necessary to stop the rotation of the rotary blade 45 of the TMP 18, it is not necessary to perform a time-consuming stop / start process of the TMP 18, and from the maintenance of the chamber 11 It is possible to quickly return the wafer W to a state where it can be loaded.

  Next, an exhaust pump according to a nineteenth embodiment of the present invention will be described.

  This embodiment is basically the same in configuration and operation as the above-described seventh embodiment, and does not include a reflector, and the shape of some of the rotor blades is different from the shape of other rotor blades. This is different from the seventh embodiment described above. Therefore, the description of the duplicated configuration and operation is omitted, and the description of the different configuration and operation is given below.

  FIG. 27 is a diagram showing a schematic configuration of a TMP as an exhaust pump according to the present embodiment, (A) is a longitudinal sectional view of the TMP, and (B) is along a line II in (A). It is sectional drawing. In FIG. 27, the upper side in the drawing is referred to as “upper side”, and the lower side in the drawing is referred to as “lower side”.

  27A and 27B, a TMP 107 includes a cylindrical main body 111 arranged along the vertical direction in the drawing, that is, the exhaust flow direction, and a rotation arranged along the central axis of the main body 111. A shaft 108, a plurality of blade-like rotating blades 45 protruding perpendicularly from the rotating shaft 108, and a plurality of blade-like stationary blades 46 protruding from the inner peripheral surface of the main body 111 toward the rotating shaft 108 are provided.

  The rotating shaft 108 has a larger protruding amount toward the APC valve 17 (chamber 11) than the rotating shaft 43 described above, and a plurality of rotating blades 109 protrude from the rotating shaft 108 in the vicinity of the end of the rotating shaft 108 on the chamber 11 side. To do. That is, the rotary blade 109 is disposed closer to the chamber 11 than the rotary blade 45.

  The plurality of rotary blades 109 project radially from the rotary shaft 108 to form a rotary blade group, and rotate about the rotary shaft 108. The plurality of rotor blades 109 are arranged at equal intervals along the circumferential direction in a plane in which the rotor blades 109 rotate. Further, the front end 109 a regarding the direction of rotation of each rotary blade 109 is curved so as to be directed to the inner peripheral surface (inner wall) of the main body 111.

  A cotton-like body 110 (particle capturing mechanism) is disposed on the inner peripheral surface of the main body 111 facing the front end 109a of the rotary blade 109. The cotton-like body 110 is made of the same material as the cotton-like body 75 described above, but is preferably made of stainless felt, fluororesin felt, or polyimide foam.

  In this TMP 107, the particle P that has entered the main body 110 collides with the front end 109a of the rotor blade 109, but the front end 109a is curved so as to be directed toward the inner peripheral surface of the main body 111. As shown in FIG. 27 (B), it recoils toward the cotton-like body 110.

  According to the exhaust pump according to the present embodiment, the front end 109 a related to the direction of rotation of the rotor blade 109 is curved so as to be directed toward the inner peripheral surface of the main body 111. Particles that have entered the main body 111 from the chamber 11 or the like collide with the front end 109a of the rotor blade 109, but the front end 109a is curved so as to be directed toward the inner peripheral surface of the main body 111, so that the particles that collide with the front end 109a Rebounds only toward the inner peripheral surface of 111. As a result, it is possible to prevent particles from entering the processing chamber.

  In the TMP 107 described above, the cotton-like body 110 is disposed on the inner peripheral surface of the main body 111 facing the front end 109 a of the rotary blade 109, so that the particles that collide with the front end 109 a are captured by the cotton-like body 110. As a result, entry of particles into the processing chamber can be reliably prevented.

  In each of the above-described embodiments, the case where the substrate processing apparatus is an etching processing apparatus as a semiconductor device manufacturing apparatus has been described. However, the substrate processing apparatus to which the present invention can be applied is not limited to this, and other semiconductors using plasma. A device manufacturing apparatus, for example, a film forming apparatus using CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), or the like may be used. Furthermore, an ion implantation processing device, a vacuum transfer device, a heat treatment device, an analysis device, an electronic accelerator, an FPD (Flat Panel Display) manufacturing device, a solar cell manufacturing device, or an etching processing device as a physical quantity analyzer, a film forming processing device The present invention can be applied to any decompression processing apparatus using TMP such as the above.

  Furthermore, in the above-described embodiment, the substrate to be processed is a semiconductor wafer, but the substrate to be processed is not limited to this, and may be a glass substrate such as an LCD (Liquid Crystal Display) or FPD, for example. .

Another object of the present invention is to supply a storage medium storing software program codes for realizing the functions of the above-described embodiments to a system or apparatus, and the computer of the system or apparatus (or CPU, MPU, or the like). Is also achieved by reading and executing the program code stored in the storage medium.

  In this case, the program code itself read from the storage medium realizes the functions of the above-described embodiments, and the program code and the storage medium storing the program code constitute the present invention. .

  Examples of the storage medium for supplying the program code include a floppy (registered trademark) disk, a hard disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, a DVD-RAM, and a DVD. An optical disc such as RW or DVD + RW, a magnetic tape, a nonvolatile memory card, a ROM, or the like can be used. Alternatively, the program code may be downloaded via a network.

  Further, by executing the program code read by the computer, not only the functions of the above-described embodiments are realized, but also an OS (Operating System) running on the computer based on the instruction of the program code Includes a case where the functions of the above-described embodiments are realized by performing part or all of the actual processing.

  Furthermore, after the program code read from the storage medium is written to a memory provided in a function expansion board inserted into the computer or a function expansion unit connected to the computer, the expanded function is based on the instruction of the program code. This includes a case where a CPU or the like provided on the expansion board or the expansion unit performs part or all of the actual processing and the functions of the above-described embodiments are realized by the processing.

S Processing space W Wafer P Particles 10, 76, 100 Substrate processing apparatus 11 Chamber 12 Lower electrode 13 Cover 14 Exhaust passage 15 Baffle plates 16, 51, 54, 57, 74 Exhaust manifold 16a Flange 17 APC
18, 60, 65, 68, 71, 107 TMP
19 Lower high frequency power supply 20 Lower matching unit 21 ESC
22 Focus ring 23 Cover ring 24 Support body 25 Bellows cover 26 Shower head 27 Gas vent hole 28 Upper electrode 29 Electrode support body 30 Upper high frequency power supply 31 Upper matching device 32 Buffer chamber 33 Process gas introduction pipe 34 Valve 35 Filters 36 and 48 Reflection Device 37 Reflecting plate support 37a Upper plate 38, 52, 62, 66 Reflecting plate 39 Opening portion 40 Joint portion 41, 63 First reflecting surface member 42, 64 Second reflecting surface member 43, 108 Rotating shafts 44, 111 Main body 45, 72, 109 Rotor blade 46, 73 Stationary blade 47, 53 Spherical member 49, 55, 69 Convex member group 50, 56 Conical member 58 Fin-like member group 59 Fin-like member 61 Intake portion 67 Reflecting member 70 Wedge-like member 75,110 Cotton-like body 77 Recoil particle preventing plate 78 Reflecting surface 79 Particle capturing mechanism 80, 7,87a N ₂ inlet line 81, 86 bypass exhaust line 82 particle capturing valve 83 cleaning chamber 84 walls 85 isolate valve 90 ICPM
101 Upper Cover 102 Lower Cover 103 Particle Capture Part 104 Core Material 105 Stainless Felt 106 Viewport

Claims (46)

A reflection device disposed inside a communication pipe that communicates with a processing chamber of a substrate processing apparatus and an exhaust pump having a rotor blade,
A reflection device comprising at least one reflection surface directed to the exhaust pump.   The reflection apparatus according to claim 1, wherein the reflection surface is formed of a spherical surface.   The reflection apparatus according to claim 1, wherein the reflection surface is formed by a flat surface.   The reflection device according to claim 2, wherein the flat surface forms an acute angle with a rotation surface of the rotor blade in the exhaust pump. A reflection device disposed inside a communication pipe that communicates with a processing chamber of a substrate processing apparatus and an exhaust pump having a rotor blade,
A reflection device comprising a kinetic energy lowering mechanism for lowering the kinetic energy of recoil particles.   6. The reflection device according to claim 5, wherein the kinetic energy lowering mechanism includes a plurality of convex members or concave members.   The reflecting device according to claim 6, wherein the convex shape of the convex member or the concave shape of the concave member is any one of a cone, a pyramid, a cylinder, a prism, and a hemisphere.   6. The reflection device according to claim 5, wherein the kinetic energy lowering mechanism is made of a shock absorbing material.   The reflection device according to claim 5, wherein the kinetic energy lowering mechanism includes a plurality of small rooms having openings. A reflection device disposed inside a communication pipe that communicates with a processing chamber of a substrate processing apparatus and an exhaust pump having a rotor blade,
A reflection device comprising a particle capturing mechanism for capturing rebounding particles.   The reflection device according to claim 10, wherein the particle capturing mechanism is made of a cotton-like body or a porous body.   12. The reflection device according to claim 11, wherein the cotton-like body is made of stainless felt or fluororesin felt.   The reflection device according to claim 10, wherein the particle capturing mechanism is made of an adhesive material. A communication pipe for communicating a processing chamber of a substrate processing apparatus and an exhaust pump having a rotor blade;
A communication pipe characterized in that at least a part of an inner wall of the communication pipe is directed to the exhaust pump. A communication pipe for communicating a processing chamber of a substrate processing apparatus and an exhaust pump having a rotor blade;
A communication pipe comprising a kinetic energy reduction mechanism for reducing the kinetic energy of recoil particles.   The communication pipe according to claim 15, wherein the kinetic energy lowering mechanism includes a plurality of convex members or concave members arranged on an inner wall of the communication pipe.   The communicating pipe according to claim 16, wherein the convex shape of the convex member or the concave shape of the concave member is any one of a cone, a pyramid, a cylinder, a prism, and a hemisphere.   The communication pipe according to claim 15, wherein the kinetic energy lowering mechanism includes a plurality of fins protruding from an inner wall of the communication pipe.   The communication pipe according to claim 15, wherein the kinetic energy lowering mechanism is made of an impact absorbing material disposed on an inner wall of the communication pipe.   The communication pipe according to claim 15, wherein the kinetic energy lowering mechanism is composed of a plurality of small rooms arranged on an inner wall of the communication pipe and having openings. A communication pipe for communicating a processing chamber of a substrate processing apparatus and an exhaust pump having a rotor blade;
A communication pipe comprising a particle trapping mechanism for trapping recoil particles.   The communication pipe according to claim 21, wherein the particle capturing mechanism is made of a cotton-like body or a porous body disposed on an inner wall of the communication pipe.   The communication pipe according to claim 22, wherein the cotton-like body is made of stainless felt or fluororesin felt.   The communication pipe according to claim 21, wherein the particle capturing mechanism is made of an adhesive material disposed on an inner wall of the communication pipe. An exhaust system comprising an exhaust pump and a communication pipe communicating with the exhaust pump and a processing chamber of the substrate processing apparatus,
An exhaust system comprising at least one of the reflecting device according to claim 1 and the communication pipe according to claims 14 to 24. An exhaust system cleaning method comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and an on-off valve capable of blocking communication between the processing chamber and the exhaust pump,
A shut-off step in which the on-off valve closes the exhaust path to shut off communication between the processing chamber and the exhaust pump;
A rough evacuation step for evacuating the exhaust path;
A cleaning method for an exhaust system, comprising: a valve opening / closing step in which an opening / closing valve that closes the exhaust path repeatedly opens and closes after rotation of a rotor blade of the exhaust pump stops. An exhaust system cleaning method comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and an on-off valve capable of blocking communication between the processing chamber and the exhaust pump,
A shut-off step in which the on-off valve closes the exhaust path to shut off communication between the processing chamber and the exhaust pump;
A rough evacuation step for evacuating the exhaust path;
And a viscous flow generating step of generating a viscous flow in the vicinity of the on-off valve whose exhaust path is closed. An exhaust system cleaning method comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and an on-off valve capable of blocking communication between the processing chamber and the exhaust pump,
A shut-off step in which the on-off valve closes the exhaust path to shut off communication between the processing chamber and the exhaust pump;
A particle holding step in which an on-off valve closing the exhaust path captures and holds particles flowing through the exhaust path;
A method of cleaning an exhaust system, comprising: a step of causing the on-off valve holding the particles to exit from the exhaust path. An exhaust system cleaning method comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and at least two on-off valves capable of blocking communication between the processing chamber and the exhaust pump,
A first shut-off step in which an on-off valve disposed on the processing chamber side of the at least two on-off valves closes the exhaust path to shut off the communication between the processing chamber and the exhaust pump;
A rough evacuation step for evacuating the exhaust path;
A cleaning method for an exhaust system, comprising: a valve opening / closing step in which an opening / closing valve disposed on the processing chamber side where the exhaust path is closed repeatedly opens and closes.   The on-off valve disposed on the exhaust pump side of the at least two on-off valves further includes a second shut-off step for closing the exhaust path and shutting off the communication between the processing chamber and the exhaust pump. 30. A method for cleaning an exhaust system according to claim 29. An exhaust system cleaning method comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and at least two on-off valves capable of blocking communication between the processing chamber and the exhaust pump,
A first shut-off step in which an on-off valve disposed on the processing chamber side of the at least two on-off valves closes the exhaust path to shut off the communication between the processing chamber and the exhaust pump;
A second shut-off step in which an on-off valve disposed on the exhaust pump side of the at least two on-off valves closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump;
A rough evacuation step for evacuating the exhaust path;
A communication recovery step in which an on-off valve disposed on the processing chamber side closing the exhaust path recovers the communication between the processing chamber and the exhaust pump;
And a viscous flow generating step for generating a viscous flow in the vicinity of an on-off valve disposed on the exhaust pump side with the exhaust path closed. An exhaust system cleaning method comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and at least two on-off valves capable of blocking communication between the processing chamber and the exhaust pump,
A shut-off step in which an open / close valve disposed on the processing chamber side of the at least two on / off valves closes the exhaust path and blocks communication between the processing chamber and the exhaust pump;
A particle holding step in which an on-off valve arranged on the processing chamber side closing the exhaust path captures and holds particles flowing through the exhaust path;
A method of cleaning an exhaust system, comprising: a step of causing the on-off valve holding the particles to exit from the exhaust path. A program for causing a computer to execute a cleaning method for an exhaust system, comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and an on-off valve capable of blocking communication between the processing chamber and the exhaust pump. A computer-readable storage medium for storing the program,
A shut-off module in which the on-off valve closes the exhaust path to shut off the communication between the processing chamber and the exhaust pump;
A rough evacuation module for evacuating the exhaust path;
A storage medium comprising: a valve opening / closing module that repeatedly opens and closes an opening / closing valve that closes the exhaust path after rotation of a rotor blade of the exhaust pump is stopped. A program for causing a computer to execute a cleaning method for an exhaust system, comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and an on-off valve capable of blocking communication between the processing chamber and the exhaust pump. A computer-readable storage medium for storing the program,
A shut-off module in which the on-off valve closes the exhaust path to shut off the communication between the processing chamber and the exhaust pump;
A rough evacuation module for evacuating the exhaust path;
A storage medium comprising: a viscous flow generating module that generates a viscous flow in the vicinity of an on-off valve that closes the exhaust path. A program for causing a computer to execute a cleaning method for an exhaust system, comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and an on-off valve capable of blocking communication between the processing chamber and the exhaust pump. A computer-readable storage medium for storing the program,
A shut-off module in which the on-off valve closes the exhaust path to shut off the communication between the processing chamber and the exhaust pump;
A particle holding module that captures and holds particles flowing through the exhaust path by an on-off valve that closes the exhaust path;
A storage medium, comprising: a module in which the on-off valve holding the particles exits from the exhaust path. An exhaust system cleaning method comprising: an exhaust path communicating with a processing chamber of a substrate processing apparatus and an exhaust pump having rotating blades; and at least two on-off valves capable of blocking communication between the processing chamber and the exhaust pump. A computer-readable storage medium storing a program to be executed, wherein the program is
A first shut-off module in which an open / close valve arranged on the processing chamber side among the at least two on-off valves closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump;
A rough evacuation module for evacuating the exhaust path;
A storage medium comprising: a valve opening / closing module in which an opening / closing valve arranged on the side of the processing chamber with the exhaust path closed repeatedly repeats opening and closing. An exhaust system cleaning method comprising: an exhaust path communicating with a processing chamber of a substrate processing apparatus and an exhaust pump having rotating blades; and at least two on-off valves capable of blocking communication between the processing chamber and the exhaust pump. A computer-readable storage medium storing a program to be executed, wherein the program is
A first shut-off module in which an open / close valve arranged on the processing chamber side among the at least two on-off valves closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump;
A second shut-off module in which an open / close valve arranged on the exhaust pump side of the at least two on-off valves closes the exhaust path and shuts off the communication between the processing chamber and the exhaust pump;
A rough evacuation module for evacuating the exhaust path;
A communication recovery module in which an on-off valve disposed on the processing chamber side closing the exhaust path recovers communication between the processing chamber and the exhaust pump;
A storage medium comprising: a viscous flow generating module that generates a viscous flow in the vicinity of an on-off valve disposed on the exhaust pump side that closes the exhaust path. An exhaust system cleaning method comprising: an exhaust path communicating with a processing chamber of a substrate processing apparatus and an exhaust pump having rotating blades; and at least two on-off valves capable of blocking communication between the processing chamber and the exhaust pump. A computer-readable storage medium storing a program to be executed, wherein the program is
A shut-off module in which an open / close valve arranged on the processing chamber side of the at least two on / off valves closes the exhaust path and blocks communication between the processing chamber and the exhaust pump;
A particle holding module that captures and holds particles flowing through the exhaust path by an on-off valve disposed on the processing chamber side that closes the exhaust path;
A storage medium, comprising: a module in which the on-off valve holding the particles exits from the exhaust path. In a substrate processing apparatus including a processing chamber for processing a substrate and an exhaust path for exhausting a gas in the processing chamber,
A substrate processing apparatus, comprising: a particle capturing component disposed on a scattering path of particles scattered from a particle generation source existing in at least one of the processing chamber and the exhaust path.   40. The substrate processing apparatus according to claim 39, wherein the particle trapping part is made of a cotton-like body or a porous body.   40. The substrate processing apparatus according to claim 39, wherein the particle capturing component is made of an impact absorbing material.   40. The substrate processing apparatus according to claim 39, wherein the particle capturing component is made of an adhesive material.   43. The substrate processing apparatus according to claim 39, wherein the particle generation source is a movable part disposed in at least one of the processing chamber and the exhaust path.   43. The substrate processing apparatus according to claim 39, wherein the particle generation source is a depression existing in at least one of the processing chamber and the exhaust path. An exhaust system cleaning method comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and an on-off valve capable of blocking communication between the processing chamber and the exhaust pump,
A shut-off step in which the on-off valve closes the exhaust path to shut off communication between the processing chamber and the exhaust pump;
A valve opening / closing step in which the opening / closing valve closing the exhaust path repeats opening / closing while rotating the rotor blades of the exhaust pump;
A cleaning step of cleaning the processing chamber of the substrate processing chamber after repeated opening and closing of the on-off valve;
An exhaust system cleaning method comprising: a carrying-in step of carrying a substrate into the processing chamber. A program for causing a computer to execute a cleaning method for an exhaust system, comprising: an exhaust path for communicating an exhaust pump having a processing chamber of a substrate processing apparatus and a rotor blade; and an on-off valve capable of blocking communication between the processing chamber and the exhaust pump. A computer-readable storage medium for storing the program,
A shut-off module in which the on-off valve closes the exhaust path to shut off the communication between the processing chamber and the exhaust pump;
A valve opening / closing module in which the opening / closing valve closing the exhaust path repeats opening and closing while rotating the rotor blades of the exhaust pump;
A cleaning module for cleaning the processing chamber of the substrate processing chamber after repeated opening and closing of the on-off valve;
And a loading module for loading the substrate into the processing chamber.

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