JP6014215B2 - Particle capturing unit, method for manufacturing the particle capturing unit, and substrate processing apparatus - Google Patents

Particle capturing unit, method for manufacturing the particle capturing unit, and substrate processing apparatus Download PDF

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JP6014215B2
JP6014215B2 JP2015166625A JP2015166625A JP6014215B2 JP 6014215 B2 JP6014215 B2 JP 6014215B2 JP 2015166625 A JP2015166625 A JP 2015166625A JP 2015166625 A JP2015166625 A JP 2015166625A JP 6014215 B2 JP6014215 B2 JP 6014215B2
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layer
fibrous material
trap unit
particle
thickness
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JP2016015504A (en
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剛 守屋
剛 守屋
俊介 豊泉
俊介 豊泉
克之 高廣
克之 高廣
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東京エレクトロン株式会社
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Description

  The present invention relates to a particle capturing unit that captures unnecessary particles moving in a substrate processing apparatus, a method for manufacturing the particle capturing unit, and a substrate processing apparatus.

  In general, a substrate processing apparatus that performs a predetermined process on a substrate such as a wafer for a semiconductor device, an FPD panel such as a liquid crystal, a glass substrate for manufacturing a solar cell, etc. A chamber (hereinafter referred to as “chamber”). In this chamber, particles caused by reaction products generated in a deposit on the inner wall of the chamber or in a predetermined process are suspended. When these floating particles adhere to the wafer surface, a wiring short circuit occurs in a product manufactured from the wafer, for example, a semiconductor device, and the yield of the semiconductor device is reduced. Therefore, the particles in the chamber are removed from the chamber together with the exhaust of the gas in the chamber by the exhaust system of the substrate processing apparatus.

  The exhaust system of the substrate processing apparatus includes an exhaust chamber (manifold) communicating with the chamber via an exhaust plate, and a turbo molecular pump (hereinafter referred to as “TMP”) that is an exhaust pump capable of realizing a high vacuum. ) And a communication pipe communicating the TMP and the manifold. The TMP has a rotating shaft arranged along the exhaust flow and a plurality of blade-shaped rotating blades protruding perpendicularly from the rotating shaft, and the rotating blades rotate at high speed around the rotating shaft, thereby The exhausted gas is exhausted at high speed. The exhaust system discharges the particles in the chamber together with the gas in the chamber by operating the TMP.

  However, the deposits attached to the TMP rotor blades peel off, or particles contained in the gas sucked by the TMP and the residues in the manifold that flow into the TMP via the communication pipe collide with the TMP rotor blades and recoil. There are things to do. Any particles that have collided with the depots and the rotating blades separated from the rotating blades are given large kinetic energy by the rotating blades rotating at high speed, and therefore flow backward in the communication pipe and enter the chamber.

In response to the above-described backflow of particles, the present inventors have developed a reflection device that reflects the particles rebounding from the TMP toward the TMP and a capturing mechanism that captures the particles (see, for example, Patent Document 1). .) The reflecting device and the capturing mechanism according to Patent Document 1 can reflect or capture most of the recoiled particles again toward the TMP.
JP 2007-180467 A

  However, since the reflection device according to Patent Document 1 described above is arranged so as to block the inside of the exhaust pipe, the conductance of the exhaust flow path is reduced to reduce the exhaust efficiency. Further, the capture mechanism according to Patent Document 1 is arranged along the inner surface of the exhaust pipe. In order to capture particles that have entered the capture mechanism, the entered particles repeatedly collide with the components of the capture mechanism. The predetermined thickness necessary for losing kinetic energy is required, and as a result, the trapping mechanism rushes into the exhaust pipe, so that the conductance of the exhaust flow path is also lowered to reduce the exhaust efficiency. When the exhaust efficiency is lowered, it takes time to evacuate the chamber, which causes problems such as a reduction in operating rate of the substrate processing apparatus.

Moreover, although it is disclosed in the said patent document 1 to use the cotton-like body which consists of a fiber as a constituent material of a capture mechanism, a fiber is easily missing from a cotton-like body, and a part of this missing fiber is TMP. In the case of falling to the surface, there is a problem that the rotor blades of the TMP may be damaged.

  An object of the present invention is to provide a particle trapping unit, a method for manufacturing the particle trapping unit, and a substrate processing apparatus capable of preventing a reduction in exhaust efficiency and preventing damage to rotor blades of an exhaust pump. It is in.

  In order to achieve the above object, the particle trapping unit of the present invention, when exhausting the gas in the processing chamber for performing a predetermined processing on the substrate by an exhaust pump having a rotating blade rotating at high speed, the processing chamber and the exhaust pump. A cylindrical trapping unit that is provided in a communicating exhaust pipe and captures particles that recoil and fly by the rotor blades, and is disposed along an inner peripheral surface of the exhaust pipe And a disc-shaped second trap unit arranged so as to cover the rotating shaft when viewed along the axial direction of the rotating shaft on an extension line of the rotating shaft of the exhaust pump, The first trap unit has at least a first layer made of a plurality of first fibrous materials and a second layer made of a plurality of second fibrous materials, and the first fibrous shape The thickness of the object is the second fibrous shape The arrangement density of the first fibrous material in the first layer is higher than the arrangement density of the second fibrous material in the second layer, and the second layer has the first density. The second trap unit is attached to a stay disposed so as to cross the inside of the exhaust pipe, and is interposed between the first layer and the space in which the particles fly.

In order to achieve the above object, the method for producing a particle trapping unit of the present invention is configured such that when a gas in a processing chamber that performs a predetermined processing on a substrate is exhausted by an exhaust pump having a rotating blade that rotates at high speed, A method of manufacturing a particle capturing unit that is provided in an exhaust pipe that communicates with an exhaust pump and captures particles that rebound and fly by the rotor blades, and is disposed along an inner peripheral surface of the exhaust pipe A first trap unit, and a rotary shaft of the exhaust pump so as to cover the rotary shaft when viewed along an axial direction of the rotary shaft on an extension line of the rotary shaft of the exhaust pump Creating a disc-shaped second trap unit disposed on an extension of the first trap unit, and attaching the second trap unit to the first trap unit, The step of forming the first trap unit includes at least forming a first layer composed of a plurality of first fibrous materials and a second layer composed of a plurality of second fibrous materials; Disposing the two layers so as to intervene between the first layer and the space in which the particles fly, and sintering the first layer and the second layer by sintering and bonding them together. The thickness of the first fibrous material is smaller than the thickness of the second fibrous material, and the arrangement density of the first fibrous materials in the first layer is the second density. The step of attaching the second trap unit is higher than the arrangement density of the second fibrous materials in the layer, and the step of attaching the second trap unit is attaching the second trap unit to a stay arranged so as to cross the exhaust pipe. And

In order to achieve the above object, a substrate processing apparatus of the present invention includes a processing chamber that performs a predetermined processing on a substrate, a rotary blade that rotates at high speed, and an exhaust pump that exhausts gas in the processing chamber, A first cylindrical tube disposed along the inner peripheral surface of the exhaust pipe is provided with an exhaust pipe communicating with the processing chamber and the exhaust pump, and a particle trapping unit provided in the exhaust pipe. And a disc-shaped second trap unit disposed so as to cover the rotation shaft when viewed along the axial direction of the rotation shaft on an extension line of the rotation shaft of the exhaust pump. And the first trap unit has at least a first layer made of a plurality of first fibrous materials and a second layer made of a plurality of second fibrous materials, The thickness of the fibrous material 1 is the second fibrous material The arrangement density of the first fibrous substance in the first layer is smaller than the thickness, and the arrangement density of the second fibrous substance in the second layer is higher, and the second layer is the first layer. layers and interposed between the space in which the particles flying, said second trap unit is characterized in that it is attached to a stay which is arranged to cross the exhaust pipe.

  According to the present invention, the first layer comprising at least a first layer made of a plurality of first fibrous materials and a second layer made of a plurality of second fibrous materials, and constituting the first layer. The thickness of one fibrous material is smaller than the thickness of the second fibrous material constituting the second layer, and the arrangement density of the first fibrous materials in the first layer is the second in the second layer. Therefore, the first layer enters the particle trapping unit and traps the particles that have passed through the second layer. Further, since the second layer is interposed between the first layer and the space in which the particles fly, the particles reflected by the first layer collide with the second fibrous material in the second layer and kinetic energy. The particles are rebounded to the first layer and the particles do not jump out of the particle trapping unit into the space. As a result, it is possible to reliably capture particles that have entered the particle capturing unit without increasing the thickness of the particle capturing unit.

It is sectional drawing which shows schematically the structure of the substrate processing apparatus with which the particle | grain capture | acquisition unit which concerns on embodiment of this invention is applied. It is an expanded sectional view of the APC valve and TMP vicinity in the substrate processing apparatus of FIG. It is a perspective view which shows roughly the structure of the particle trap unit as a particle | grain trapping unit which concerns on this Embodiment. FIG. 4 is an enlarged cross-sectional view schematically showing a structure of a mesh member constituting the first trap unit and the second trap unit in FIG. 3. It is process drawing of the manufacturing method of the 1st trap unit in the particle trap unit as a particle | grain trapping unit concerning this Embodiment. It is a perspective view which shows roughly the structure of the modification of the particle trap unit as a particle | grain trapping unit which concerns on this Embodiment. It is an expanded sectional view showing roughly the structure of the modification of a mesh member. It is a fragmentary sectional view which shows roughly the modification of the apparatus with which a particle trap unit is applied.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus to which a particle trapping unit according to the present embodiment is applied.

  In FIG. 1, a substrate processing apparatus 10 configured as an etching processing apparatus that performs a reactive ion etching (hereinafter referred to as “RIE”) process on a semiconductor wafer (hereinafter simply referred to as “wafer”) W. Includes a chamber 11 (processing chamber) that is formed of a metal, for example, aluminum or stainless steel, and has a shape in which two large and small cylinders are stacked.

  A wafer W is placed in the chamber 11, and the lower electrode 12 as a wafer stage that moves up and down in the chamber 11 together with the placed wafer W, and the side portion of the lower electrode 12 that moves up and down are covered. A cylindrical cover 13 is arranged.

  An annular exhaust plate 15 that divides an exhaust chamber (hereinafter referred to as “manifold”) 14 from a processing space S, which is a space above the lower electrode 12, is disposed on the side of the lower electrode 12. 16 and an automatic pressure control valve (hereinafter referred to as “APC”) 17 which is a variable slide valve, and communicates with a TMP 18 which is an exhaust pump for evacuation. The TMP 18 depressurizes the inside of the chamber 11 until it is almost in a vacuum state, and the APC valve 17 controls the pressure in the chamber 11 at the time of depressurizing the chamber 11. The exhaust plate 15 has a plurality of slit-shaped or circular vent holes that communicate the processing space S and the manifold 14. In the substrate processing apparatus 10, the manifold 14, the communication pipe 16 and the APC valve 17 constitute an exhaust system.

  A lower high-frequency power source 19 is connected to the lower electrode 12 via a lower matching unit 20, and the lower high-frequency power source 19 applies a predetermined high-frequency power to the lower electrode 12. Further, the lower matching unit 20 reduces the reflection of the high frequency power from the lower electrode 12 to maximize the supply efficiency of the high frequency power to the lower electrode 12.

  Above the lower electrode 12, an ESC 21 for adsorbing the wafer W with electrostatic attraction is disposed. A DC power supply (not shown) is electrically connected to an electrode plate (not shown) built in the ESC 21. The ESC 21 sucks and holds the wafer W on its upper surface by a Coulomb force or a Johnson-Rahbek force generated by a DC voltage applied to the electrode plate from a DC power source. Further, an annular focus ring 22 made of silicon (Si) or the like is disposed on the periphery of the ESC 21, and the periphery of the focus ring 22 is covered with an annular cover ring 23.

  A support 24 that extends downward from the lower portion of the lower electrode 12 is disposed below the lower electrode 12. The support 24 supports the lower electrode 12 and raises and lowers the lower electrode 12. Further, the support 24 is covered with a bellows 25 and is shielded from the atmosphere in the chamber 11 and the manifold 14.

  In the substrate processing apparatus 10, when the wafer W is loaded into and unloaded from the chamber 11, the lower electrode 12 is lowered to the loading / unloading position of the wafer W, and when the wafer W is subjected to RIE processing, the lower electrode 12 is moved to the wafer 11. Ascend to the W processing position.

  A shower head 26 for supplying a processing gas, which will be described later, is disposed in the chamber 11 at the ceiling. The shower head 26 includes a disk-shaped upper electrode 28 having a large number of gas vent holes 27 facing the processing space S, and an electrode support body disposed above the upper electrode 28 and detachably supporting the upper electrode 28. 29.

  An upper high frequency power supply 30 is connected to the upper electrode 28 via an upper matching unit 31, and the upper high frequency power supply 30 applies a predetermined high frequency power to the upper electrode 28. Further, the upper matching unit 31 reduces the reflection of the high frequency power from the upper electrode 28 to maximize the supply efficiency of the high frequency power to the upper electrode 28.

A buffer chamber 32 is provided inside the electrode support 29, a processing gas introduction pipe 33 is connected to the buffer chamber 32, and a valve 34 is disposed in the middle of the processing gas introduction pipe 33. For example, carbon tetrafluoride (CF 4 ) alone or CF 4 and argon gas (Ar), oxygen gas (O 2 ), silicon tetrafluoride (SiF 4 ) is supplied to the buffer chamber 32 from a processing gas introduction pipe 33. ) And the like, and the introduced processing gas is supplied to the processing space S through the gas vent hole 27.

  In the chamber 11 of the substrate processing apparatus 10, as described above, high-frequency power is applied to the lower electrode 12 and the upper electrode 28, and high-density plasma is generated from the processing gas in the processing space S by the applied high-frequency power. Then, ions and radicals are generated. These generated radicals and ions physically or chemically etch the surface of the wafer W adsorbed and held on the upper surface of the lower electrode 12.

  FIG. 2 is an enlarged cross-sectional view in the vicinity of the APC valve and TMP in the substrate processing apparatus of FIG. 1, and FIG. 3 is a perspective view schematically showing a configuration of a particle trap unit as a particle trap unit according to the present embodiment. It is.

  In FIG. 2, the TMP 18 includes a rotating shaft 35 disposed in the vertical direction in the drawing, that is, along the direction of the exhaust flow, and a cylindrical body 36 disposed in parallel with the rotating shaft 35 so as to accommodate the rotating shaft 35. , A plurality of blade-like rotary blades 37 protruding vertically from the rotary shaft 35, and a plurality of blade-like stationary blades 38 protruding toward the rotary shaft 35 from the inner peripheral surface of the cylindrical body 36.

  The plurality of rotary blades 37 project radially from the rotary shaft 35 to form a rotary blade group, and the plurality of stationary blades 38 are arranged at equal intervals on the same circumference of the inner peripheral surface of the cylindrical body 36, and the rotary shaft Projecting toward 35 forms a stationary blade group. In the TMP 18, there are a plurality of rotary blade groups and stationary blade groups, and each rotary blade group is arranged at equal intervals along the rotary shaft 35, and each stationary blade group is arranged between two adjacent rotary blade groups. .

  In general, in the TMP 18, the uppermost rotary blade group is disposed above the uppermost stationary blade group in the figure. That is, the uppermost rotary blade group is disposed closer to the communication pipe 16 than the uppermost stationary blade group. The TMP 18 rotates the rotating blades 37 around the rotation shaft 35 at high speed, thereby exhausting the gas from the communication pipe 16 to the lower side of the TMP 18.

A relatively short cylindrical exhaust pipe 39 is provided between the APC valve 17 and the TMP 18, and the exhaust pipe 39 allows the APC valve 17 and the TMP 18 to communicate with each other, and a particle trap unit 40 (particle trapping unit) is provided therein. Have.

  2 and 3, the particle trap unit 40 is disposed on the extended line of the cylindrical first trap unit 40 a (cylindrical portion) disposed along the inner peripheral surface of the exhaust pipe 39 and the rotating shaft 35 of the TMP 18. A disc-shaped second trap unit 40b (a plate-like portion) that is arranged so as to cover the rotating shaft 35 when viewed in plan view (when viewed along a hollow arrow in FIG. 2). And have. The second trap unit 40b is attached by a cap screw 42 to a rod-like stay 41 disposed so as to cross the exhaust pipe 39. Each of the first trap unit 40a and the second trap unit 40b includes a mesh member 43 (described later) having a three-layer structure, and takes in and captures the entering particles P.

  Specifically, when the particle P flowing into the TMP 18 collides with the rotating blade 37 rotating at a high speed, the particle P is given kinetic energy in the tangential direction of the rotation of the rotating blade 37 and reacts toward the inner peripheral surface of the exhaust pipe 39. Although the first trap unit 40a is arranged along the inner peripheral surface of the exhaust pipe 39, the recoiled particles P enter the first trap unit 40a, and the first trap unit 40a The entering particle P is captured and captured.

  In addition, particles (not shown) that flow toward the rotating shaft 35 of the TMP 18 adhere to the periphery of the TMP 18 and become a deposit, which causes generation of particles that flow backward from the TMP 18 toward the exhaust pipe 39 and the like. Since the unit 40b is arranged upstream of the TMP 18 with respect to the exhaust, the second trap unit 40b captures and captures particles flowing toward the rotating shaft 35 of the TMP 18.

  In the present embodiment, the second trap unit 40b is fixed to the stay 41 with the cap screw 42. However, the means for fixing the second trap unit 40b to the stay 41 is not limited to this, and an adhesive or the like is used. Other means may be used as long as the means can be fixed, and the stay 41 is also formed of a rod-shaped member in the present embodiment, but the form of the stay is not limited to this, and a second member such as a net-like member may be used. As long as it is a member that can hold the trap unit 40b in the space, it may be formed in other forms.

  FIG. 4 is an enlarged cross-sectional view schematically showing the structure of the mesh member constituting the first trap unit and the second trap unit in FIG.

  In FIG. 4, the mesh member 43 is a first mesh layer 44 (first layer) formed by weaving a fibrous first stainless steel 44 a having a diameter of 0.2 μm to 3 μm. A second mesh layer 45 (second layer) formed by weaving a fibrous second stainless steel 45a having a diameter of 3 to 30 μm, and a thickness of 30 to 400 μm. And a third mesh layer 46 (third layer) formed by weaving the fibrous third stainless steel 46a.

  In the first mesh layer 44, the first stainless steel 44a is at least double stacked, and in the second mesh layer 45, the second stainless steel 45a is at least double stacked. In the mesh layer 46, the third stainless steel 46a is overlapped at least twice. In the drawing, the second mesh layer 45, the first mesh layer 44, and the third mesh layer 46 are laminated in this order from the bottom, and the total thickness of the mesh member 43 is suppressed to 1 mm or less.

  In the first trap unit 40a, the mesh member 43 has a second mesh layer 45 in the internal space of the first mesh layer 44 and the exhaust pipe 39, that is, a space in which particles P (particles) fly (hereinafter, referred to as the “mesh”). The second mesh layer 45 is exposed to the particle flying space. Since the third mesh layer 46 is disposed so as to face the second mesh layer 45 with the first mesh layer 44 interposed therebetween, the third mesh layer 46 is formed on the inner peripheral surface of the exhaust pipe 39. And is not exposed to the particle flying space.

  Further, in the second trap unit 40b, the mesh member 43 is arranged so that the second mesh layer 45 is opposed to the exhaust flow containing the particles P flowing through the exhaust pipe 39 and is exposed to the exhaust flow. . Since the third mesh layer 46 is disposed so as to face the second mesh layer 45 with the first mesh layer 44 interposed therebetween, the third mesh layer 46 is in contact with the stay 41. At this time, since the second trap unit 40b uses a mesh-like member and is as thin as 1 mm or less, it is possible to suppress a decrease in exhaust conductance in the exhaust pipe 39.

  In the mesh-like member 43 of the first trap unit 40a or the second trap unit 40b, the second mesh-like layer 45 is exposed to the particle flying space or the exhaust flow, so that the particles P are first in the second mesh-like layer 45. Enter. Some of the particles P that have entered the second mesh layer 45 are captured by being fitted into the openings (gap) of the stitches formed by the second stainless steel 45a in the second mesh layer 45. Since the thickness of the second stainless steel 45 a is large and the gap generated in the second mesh layer 45 is large, a part of the particles P passes through the second mesh layer 45 to the first mesh layer 44. To reach.

  Since the thickness of the first stainless steel 44a in the first mesh layer 44 is thin, only a small gap is generated in the first mesh layer 44, and the particles P reaching the first mesh layer 44 are The first mesh layer 44 cannot pass through the first mesh layer 44 and stays in the first mesh layer 44, and the first mesh layer 44 has a stitch opening (gap) formed by the first stainless steel 44a. It is caught and caught.

  In addition, some of the particles P that have reached the first mesh layer 44 are reflected by the first stainless steel 44a without being fitted into the gaps of the first mesh layer 44, and the particle flying space. However, since the second mesh layer 45 is interposed between the first mesh layer 44 and the particle flying space, the reflected particles P are captured by the second mesh layer 45. Alternatively, it collides with the second stainless steel 45a of the second mesh layer 45 and loses kinetic energy, and then rebounds to the first mesh layer 44. Since the bounced particles P have a small kinetic energy, they do not reflect from the first mesh layer 44 and stay on the first mesh layer 44 after reaching the first mesh layer 44.

  Therefore, the particles P that have entered the mesh member 43 do not return from the mesh member 43 to the particle flying space, and the mesh member 43 can reliably capture the particles P that have entered.

  The thickness of the third stainless steel 46 a constituting the third mesh layer 46 is the same as the thickness of the first stainless steel 44 a constituting the first mesh layer 44 or the second mesh layer 45. Since the third mesh layer 46 constitutes a part of the mesh member 43, the third mesh layer 46 is improved in rigidity of the mesh member 43. It is possible to prevent the first trap unit 40a and the second trap unit 40b from being deformed and lowering the particle capturing efficiency.

  Next, a method for manufacturing the particle capturing unit according to the present embodiment will be described.

  FIG. 5 is a process diagram of the first trap unit manufacturing method in the particle trap unit as the particle trapping unit according to the present embodiment.

  In FIG. 5, first, a plurality of first stainless steels 44 a are knitted to form a band-shaped first mesh layer 44, and a plurality of second stainless steels 45 a are knitted to form a band-shaped second mesh layer 45. And a plurality of third stainless steels 46a are knitted to form a strip-shaped third mesh layer 46 (FIG. 5A) (layer formation step).

  Next, the strip-shaped first mesh layer 44, the strip-shaped second mesh layer 45, and the strip-shaped third mesh layer 46 are cut into substantially the same length, and the first mesh layer 46 is cut into the first mesh layer 46. The mesh-like member 44 is overlapped, and the second mesh-like layer 45 is further overlapped with the first mesh-like layer 44 to form the mesh-like member 43, and the mesh-like member 43 is formed into a cylindrical shape. At this time, when the first trap unit 40a manufactured from the mesh member 43 is disposed in the exhaust pipe 39, the innermost cylindrical shape is arranged so that the second mesh layer 45 is exposed to the particle flying space. The second mesh layer 45 is positioned on the circumferential side (FIG. 5B) (forming step).

  Next, the mesh-shaped members 43 formed into a cylindrical shape are baked and hardened by sintering and joined together to manufacture the first trap unit 40a, and this processing is completed (FIG. 5C).

  The second trap unit 40b is also manufactured according to the manufacturing method of FIG. 5 except that the second trap unit 40b is cut into a circular shape instead of a belt shape and is not formed into a cylindrical shape.

  According to the particle trap unit 40 according to the present embodiment, the mesh-like member 43 constituting the first trap unit 40a and the second trap unit 40b is a first mesh made of a plurality of first stainless steels 44a. And a second mesh layer 45 made of a plurality of second stainless steels 45a, the first stainless steel 44a having a thickness smaller than that of the second stainless steel 45a. Since the arrangement density of the first stainless steel 44 a in the mesh layer 44 is higher than the arrangement density of the second stainless steel 45 a in the second mesh layer 45, the first mesh layer 44 is the mesh member 43. The particles P entering the second mesh layer 45 and passing through the second mesh layer 45 are captured.

  In addition, since the second mesh layer 45 is interposed between the first mesh layer 44 and the particle flying space, the particles that have passed through the second mesh layer 45 and reflected by the first mesh layer 44 are reflected. Since P collides with the second stainless steel 45a in the second mesh layer 45 and loses kinetic energy and is bounced back to the first mesh layer 44, the particles P jump out of the mesh member 43 into the space. There is nothing.

  As a result, without increasing the thickness of the mesh member 43, for example, even if the thickness of the mesh member 43 is set to 1 mm or less, the particles P that have entered the mesh member 43 can be reliably captured. .

  Further, in the first trap unit 40a and the second trap unit 40b of the particle trap unit 40, the third mesh layer 46, the first mesh layer 44, and the second mesh layer 45 are baked and hardened by sintering. Therefore, the first trap unit 40a and the second trap unit 40b have high rigidity. Therefore, since it is not necessary to provide a frame that supports the first trap unit 40a and the second trap unit 40b, the particle trap unit 40 can be prevented from approaching into the space. As a result, the particle trap unit 40 can prevent a reduction in exhaust efficiency.

  Further, since the mesh member 43 is sintered, a part of the first stainless steel 44a constituting the first mesh layer 44 and the second stainless steel 45a constituting the second mesh layer 45 are formed. A part or part of the third stainless steel 46 a constituting the third mesh layer 46 is not lost. As a result, a part of the missing stainless steel does not collide with the rotor blades 37 of the TMP 18 and recoil, so that it is possible to surely prevent foreign matter from entering the processing chamber and also the rotor blades 37 of the TMP 18. Etc. can be prevented from being damaged.

  Further, in the first trap unit 40a and the second trap unit 40b, the mesh member 43 is deformed into a desired shape, and then the third mesh layer 46, the first mesh layer 44, and the second mesh are formed. Since the layer 45 is baked and hardened by sintering, a desired shape can be easily realized.

Furthermore, since the first mesh layer 44, the second mesh layer 45, and the third mesh layer 46 are made of stainless steel , a certain degree of elongation or distortion is allowed. Therefore, when the mesh member 43 is deformed into a desired shape before sintering, the first mesh layer 44, the second mesh layer 45, and the third mesh layer 46 are partially broken. Thus, the manufacture of the particle trap unit 40 can be facilitated.

  Although the present invention has been described using the above embodiment, the present invention is not limited to the above embodiment.

  For example, as shown in FIG. 6, the particle trap unit 40 is configured by a mesh-like member 43, and extends in the radial direction of the first trap unit 40 a from the first trap unit 40 a toward the inside of the exhaust pipe 39. You may provide the some plate-shaped protrusion part 40c which protrudes. Since each protruding portion 40c inhibits the progress of the particles P given the kinetic energy in the tangential direction of the rotation of the rotating blades 37, the capturing efficiency of the particles P that recoil from the rotating blades 37 can be further improved. Each projecting portion 40c does not need to be extended to the center of the exhaust pipe 39, and the projecting amount from the first trap unit 40a is changed based on the amount of particles P generated, the rotational speed of the rotary blade 37, or the like. Also good.

  The mesh member 43 does not necessarily have to have the third mesh layer 46, but has at least the first mesh layer 44 and the second mesh layer 45, and the second mesh layer 45 is a particle flying space. It only has to be exposed to. Further, the number of layers constituting the mesh member 43 is not limited to three. For example, as shown in FIG. 7, another third mesh layer 46 is interposed between the second mesh layer 45 and the particle flying space. May be interposed. Thereby, the rigidity of the 1st trap unit 40a and the 2nd trap unit 40b can be improved more.

  Further, the first mesh layer 44 may be sandwiched between two second mesh layers 45, whereby particles flying from both directions can be captured. In this case as well, the third mesh layer 46 as a reinforcing material may be provided on one side of the laminated structure composed of the first mesh layer 44 and the two second mesh layers 45, or the above laminated layer. It may be provided on both sides of the structure so as to sandwich the laminated structure.

  Further, as the fibrous material constituting the first mesh layer 44, the second mesh layer 45, and the third mesh layer 46, not only the above-described stainless steel but also other sinterable metals are used. Furthermore, ceramics such as alumina can also be used.

The particle trap unit composed of the mesh member 43 is not limited to the exhaust pipe 39 in the substrate processing apparatus 10, but is used for the exhaust flow in components constituting the exhaust system, such as the manifold 14, the communication pipe 16 and the APC valve 17, or the TMP 18. As long as it is exposed, it can be placed at any location, and the shape and configuration of the particle trap unit can be changed according to the location. In this embodiment, the case where the present invention is applied to an etching processing apparatus has been described. However, the apparatus to be applied is not limited to this, and the present invention can also be applied to a substrate processing apparatus that performs other processes such as a CVD apparatus or an ashing apparatus.

  In addition to the substrate processing apparatus 10, any apparatus having a portion where particles fly in a reduced pressure space can be applied to the apparatus. For example, as shown in FIG. 8, a particle trap unit 50 may be disposed along the inner wall surface of the transfer chamber 48 in the vicinity of the gate valve 49 that partitions the processing chamber 47 and the transfer chamber (transfer chamber) 48 of the substrate processing apparatus. Good.

P Particle W Wafer 11 Chamber 18 TMP
37 rotor blade 39 exhaust pipe 40, 50 particle trap unit 40a first trap unit 40b second trap unit 40c projecting portion 44 first mesh layer 44a first stainless steel 45 second mesh layer 45a second Stainless steel 46 Third mesh layer 46a Third stainless steel

Claims (10)

  1. When exhausting the gas in the processing chamber for performing a predetermined process on the substrate by an exhaust pump having a rotary blade that rotates at high speed, the gas is recoiled by the rotary blade provided in the exhaust pipe that communicates with the processing chamber and the exhaust pump. A particle capturing unit for capturing flying particles,
    A cylindrical first trap unit disposed along the inner peripheral surface of the exhaust pipe;
    A disc-shaped second trap unit disposed on the extension line of the rotary shaft of the exhaust pump so as to cover the rotary shaft when viewed along the axial direction of the rotary shaft;
    The first trap unit has at least a first layer made of a plurality of first fibrous materials and a second layer made of a plurality of second fibrous materials,
    The thickness of the first fibrous material is smaller than the thickness of the second fibrous material, and the arrangement density of the first fibrous material in the first layer is the second density in the second layer. Higher than the arrangement density of the fibrous material,
    The second layer is interposed between the first layer and the space in which the particles fly,
    The particle trapping unit, wherein the second trap unit is attached to a stay arranged so as to cross the exhaust pipe.
  2.   The first trap unit further includes a third layer made of a third fibrous material having a thickness larger than the thickness of the second fibrous material, and the third layer is the first layer. The particle capturing unit according to claim 1, wherein the particle capturing unit is disposed so as to face the second layer through a layer.
  3.   The particle capturing unit according to claim 2, wherein the thickness of the third fibrous material is 30 to 400 µm in diameter.
  4.   4. The particle according to claim 2, further comprising another third layer, wherein the other third layer is interposed between the second layer and a space in which the particles fly. Capture unit.
  5.   5. The thickness of the first fibrous material is 0.2 μm to 3 μm in diameter, and the thickness of the second fibrous material is 3 μm to 30 μm in diameter. The particle | grain capture | acquisition unit of any one of Claims.
  6. The particle capturing unit according to any one of claims 1 to 5 , wherein the first fibrous material and the second fibrous material are made of stainless steel .
  7. When exhausting the gas in the processing chamber for performing a predetermined process on the substrate by an exhaust pump having a rotary blade that rotates at high speed, the gas is recoiled by the rotary blade provided in the exhaust pipe that communicates with the processing chamber and the exhaust pump. A method for producing a particle capturing unit for capturing flying particles,
    Forming a cylindrical first trap unit disposed along the inner peripheral surface of the exhaust pipe;
    A disk-shaped first line disposed on the extension line of the rotary shaft of the exhaust pump so as to cover the rotary axis when viewed along the axial direction of the rotary shaft on the extension line of the rotary shaft of the exhaust pump. Creating two trap units;
    Attaching the second trap unit to the first trap unit;
    Forming the first trap unit comprises:
    Forming at least a first layer composed of a plurality of first fibrous materials and a second layer composed of a plurality of second fibrous materials;
    Disposing the second layer so as to be interposed between the first layer and the space in which the particles fly;
    Bake the first layer and the second layer by sintering and bond together.
    The thickness of the first fibrous material is smaller than the thickness of the second fibrous material, and the arrangement density of the first fibrous material in the first layer is the second density in the second layer. Higher than the arrangement density of the fibrous material,
    The step of attaching the second trap unit comprises attaching the second trap unit to a stay arranged so as to cross the exhaust pipe.
  8. Arranging a third layer made of a third fibrous material having a thickness larger than that of the second fibrous material so as to face the second layer with the first layer interposed therebetween. The method for producing a particle trapping unit according to claim 7 .
  9. A processing chamber for performing predetermined processing on the substrate;
    An exhaust pump having a rotating blade rotating at high speed and exhausting gas in the processing chamber;
    An exhaust pipe communicating the processing chamber and the exhaust pump;
    A particle capturing unit provided in the exhaust pipe,
    The particle capture unit comprises:
    A cylindrical first trap unit disposed along the inner peripheral surface of the exhaust pipe;
    A disc-shaped second trap unit disposed on the extended line of the rotary shaft of the exhaust pump so as to cover the rotary shaft when viewed along the axial direction of the rotary shaft;
    The first trap unit has at least a first layer made of a plurality of first fibrous materials and a second layer made of a plurality of second fibrous materials,
    The thickness of the first fibrous material is smaller than the thickness of the second fibrous material, and the arrangement density of the first fibrous material in the first layer is the second density in the second layer. Higher than the arrangement density of the fibrous material,
    The second layer is interposed between the first layer and the space in which the particles fly ,
    The substrate processing apparatus, wherein the second trap unit is attached to a stay disposed so as to cross the exhaust pipe.
  10. The first trap unit further includes a third layer made of a third fibrous material having a thickness larger than the thickness of the second fibrous material, and the third layer is the first layer. The substrate processing apparatus according to claim 9 , wherein the substrate processing apparatus is disposed so as to face the second layer through a layer.
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