JP2012227278A5

JP2012227278A5 -

Info

Publication number: JP2012227278A5
Application number: JP2011092364A
Authority: JP
Filing date: 2011-04-18
Publication date: 2014-05-29
Anticipated expiration: 2031-04-18

Description

本発明では、ウエハを保持する手段の上面に段差部を有し、前記保持する手段の最上段にウエハが載置され、前記段差部の直径がウエハの直径より小さくしてあり、前記段差部にウエハを保持する手段と同電位となるように設けたリング状部材が配置され、かつ前記リング状部材の上面が前記保持する手段の上面より高くしてあり、前記リング状部材の内径側の表面と上面と外径側の表面とを覆う誘電体の部材を備えて、前記リング状部材に印加されたバイアス電力が前記処理室内の前記プラズマに印加されないようにしたことで、ウエハ外周部周辺の等電位面の湾曲を改善し、ウエハ外周部周辺の等電位面をウエハと平行にすることでウエハに入射するイオンの軌道をウエハに垂直方向とし、Ｅ．Ｅ部のエッチングレートを高精度に均一化できる。
In the present invention, there is a step portion on the upper surface of the means for holding the wafer, the wafer is placed on the uppermost stage of the means for holding, the diameter of the step portion is smaller than the diameter of the wafer, and the step portion A ring-shaped member provided to have the same potential as the means for holding the wafer is disposed, and the upper surface of the ring-shaped member is higher than the upper surface of the holding means, and the inner diameter side of the ring-shaped member is A dielectric member that covers the surface , the top surface, and the outer diameter side surface is provided so that bias power applied to the ring-shaped member is not applied to the plasma in the processing chamber, so that the periphery of the wafer outer periphery The equipotential surface curvature of the wafer is improved, and the equipotential surface around the periphery of the wafer is made parallel to the wafer so that the trajectory of ions incident on the wafer is perpendicular to the wafer. The etching rate of the E portion can be made uniform with high accuracy.

Claims

A processing chamber to which an evacuation apparatus is connected and whose inside can be depressurized, a device for supplying gas into the processing chamber, means for holding a material to be processed in the processing chamber, and plasma in the processing chamber In a plasma processing apparatus having plasma generating means for generating and bias applying means for applying a bias potential to the means for holding the material to be processed,
The upper surface of the means for holding the processed material has a stepped portion, and the processed material is placed on the uppermost stage of the means for holding the processed material, and the diameter of the stepped portion is the diameter of the processed material. A ring-shaped member that is smaller than the diameter and provided at the same potential as the means for holding the material to be processed is disposed in the stepped portion, and the upper surface of the ring-shaped member holds the material to be processed And a dielectric material member that covers the inner diameter side surface , the upper surface, and the outer diameter side surface of the ring-shaped member, and the bias power applied to the ring-shaped member is the treatment A plasma processing apparatus characterized in that it is not applied to the plasma in the room .

2. The plasma processing apparatus according to claim 1, wherein an upper surface of the ring-shaped member is disposed at a higher position in a range of 0.0 mm or more and 5.0 mm or less than an upper surface of the means for holding the workpiece. A plasma processing apparatus.

3. The plasma processing apparatus according to claim 1 , wherein an inner diameter of an upper surface of the ring-shaped member is larger in a range of 1.0 mm to 10 mm than an outer diameter of the material to be processed .

3. The plasma processing apparatus according to claim 1, wherein the dielectric material has a thickness in a range of 1.0 mm to 5.0 mm .

3. The plasma processing apparatus according to claim 1, wherein the ring-shaped member and the means for holding the material to be processed are formed as the same part .

3. The plasma processing apparatus according to claim 1, wherein a surface of the ring-shaped member is covered with an anodic oxide film or a sprayed coating .

The inside of the processing chamber is depressurized by an evacuation device, gas is supplied into the processing chamber, the processing material to be processed is held in the processing chamber, plasma is generated in the processing chamber, and the processing material is In a method of applying a bias potential to the holding means, and subjecting the material to be treated to plasma treatment by adsorbing the material to be treated on the temperature-adjusted electrode by electrostatic force,
The means for holding the material to be processed having a stepped portion on the upper surface is used, the material to be processed is held at the uppermost stage of the means for holding, and the diameter of the stepped portion is made smaller than the diameter of the material to be processed. A ring-shaped member arranged to have the same potential as the means for holding the material to be processed at the stepped portion with respect to the means for holding the material to be processed, The bias power applied to the ring member is provided higher than the upper surface of the holding means, and a member made of a dielectric covering the gap between the stepped portion and the ring member and the upper surface of the ring member is used. the plasma processing method characterized in that etching is performed so as not to be applied to the plasma processing chamber.