JP2012221301A5 - - Google Patents
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- JP2012221301A5 JP2012221301A5 JP2011087431A JP2011087431A JP2012221301A5 JP 2012221301 A5 JP2012221301 A5 JP 2012221301A5 JP 2011087431 A JP2011087431 A JP 2011087431A JP 2011087431 A JP2011087431 A JP 2011087431A JP 2012221301 A5 JP2012221301 A5 JP 2012221301A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor integrated
- integrated circuit
- temperature
- circuit
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (4)
前記電源回路から供給される供給電圧により動作し、安定的に動作するために必要な下限電圧が温度の上昇に応じて低下する特性を備える半導体集積回路と、
前記半導体集積回路の温度を計測する温度センサと、
を含み、
前記電源回路は、前記計測される温度の上昇に応じて低下する前記半導体集積回路の下限電圧に合わせて、前記供給電圧を下げる
ことを特徴とする電子機器。 A power circuit;
A semiconductor integrated circuit that operates with a supply voltage supplied from the power supply circuit and has a characteristic that a lower limit voltage necessary for stable operation decreases with an increase in temperature ;
A temperature sensor for measuring the temperature of the semiconductor integrated circuit;
Including
The electronic device according to claim 1 , wherein the power supply circuit lowers the supply voltage in accordance with a lower limit voltage of the semiconductor integrated circuit that decreases as the measured temperature increases.
前記電源回路は、前記計測される温度が所定の閾値以上になったときに、所定の下げ幅だけ前記供給電圧を下げる
ことを特徴とする電子機器。 The electronic device according to claim 1,
The electronic device according to claim 1, wherein the power supply circuit lowers the supply voltage by a predetermined decrease amount when the measured temperature becomes a predetermined threshold value or more.
前記電源回路から供給される供給電圧により動作し、安定的に動作するために必要な下限電圧が温度の上昇に応じて低下する特性を備える半導体集積回路と、
前記半導体集積回路の温度を計測する温度センサと、
を含む電子機器の制御方法であって、
前記計測される温度を取得するステップと、
前記取得した温度の上昇に応じて低下する前記半導体集積回路の下限電圧に合わせて、前記電源回路が前記半導体集積回路に供給する供給電圧を下げるステップと、
を含むことを特徴とする電子機器の制御方法。 A power circuit;
A semiconductor integrated circuit that operates with a supply voltage supplied from the power supply circuit and has a characteristic that a lower limit voltage necessary for stable operation decreases with an increase in temperature ;
A temperature sensor for measuring the temperature of the semiconductor integrated circuit;
A method for controlling an electronic device including:
Obtaining the measured temperature;
Lowering the supply voltage that the power supply circuit supplies to the semiconductor integrated circuit in accordance with the lower limit voltage of the semiconductor integrated circuit that decreases as the acquired temperature rises;
A method for controlling an electronic device, comprising:
当該半導体集積回路の温度を計測する温度センサと、
前記計測される温度の上昇に応じて低下する当該半導体集積回路の下限電圧に合わせて、前記供給電圧を下げるよう前記電源回路に要求する手段と、
を含むことを特徴とする半導体集積回路。 A semiconductor integrated circuit that operates with a supply voltage supplied from a power supply circuit and has a characteristic that a lower limit voltage necessary for stable operation decreases with an increase in temperature ,
A temperature sensor for measuring the temperature of the semiconductor integrated circuit;
Means for requesting the power supply circuit to lower the supply voltage in accordance with a lower limit voltage of the semiconductor integrated circuit that decreases as the measured temperature rises;
A semiconductor integrated circuit comprising:
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011087431A JP5296136B2 (en) | 2011-04-11 | 2011-04-11 | Electronic device, control method thereof, and semiconductor integrated circuit |
CN201280016549.9A CN103460159B (en) | 2011-04-11 | 2012-04-10 | Semiconductor integrated circuit |
US14/009,593 US8975951B2 (en) | 2011-04-11 | 2012-04-10 | Semiconductor integrated circuit |
PCT/JP2012/059818 WO2012141182A1 (en) | 2011-04-11 | 2012-04-10 | Semiconductor integrated circuit |
EP12771976.3A EP2698684B1 (en) | 2011-04-11 | 2012-04-10 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011087431A JP5296136B2 (en) | 2011-04-11 | 2011-04-11 | Electronic device, control method thereof, and semiconductor integrated circuit |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012221301A JP2012221301A (en) | 2012-11-12 |
JP2012221301A5 true JP2012221301A5 (en) | 2013-03-07 |
JP5296136B2 JP5296136B2 (en) | 2013-09-25 |
Family
ID=47272711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011087431A Active JP5296136B2 (en) | 2011-04-11 | 2011-04-11 | Electronic device, control method thereof, and semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5296136B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8975954B2 (en) * | 2013-01-08 | 2015-03-10 | Qualcomm Incorporated | Method for performing adaptive voltage scaling (AVS) and integrated circuit configured to perform AVS |
US9037882B2 (en) * | 2013-02-27 | 2015-05-19 | Qualcomm Incorporated | System and method for thermal management in a portable computing device using thermal resistance values to predict optimum power levels |
US8963620B2 (en) | 2013-07-23 | 2015-02-24 | International Business Machines Corporation | Controlling circuit voltage and frequency based upon location-dependent temperature |
JP2015130035A (en) | 2014-01-07 | 2015-07-16 | 富士通株式会社 | Semiconductor device and control method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007079848A (en) * | 2005-09-13 | 2007-03-29 | Sony Computer Entertainment Inc | Power unit and electronic equipment using the same |
JP2007165527A (en) * | 2005-12-13 | 2007-06-28 | Renesas Technology Corp | Method of controlling semiconductor integrated circuit |
WO2008137625A2 (en) * | 2007-05-03 | 2008-11-13 | Dsm Solutions, Inc. | Method and system for adaptive power management |
JP5498047B2 (en) * | 2009-04-01 | 2014-05-21 | 株式会社東芝 | Semiconductor integrated circuit |
-
2011
- 2011-04-11 JP JP2011087431A patent/JP5296136B2/en active Active
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