JP2012221301A5 - - Google Patents

Download PDF

Info

Publication number
JP2012221301A5
JP2012221301A5 JP2011087431A JP2011087431A JP2012221301A5 JP 2012221301 A5 JP2012221301 A5 JP 2012221301A5 JP 2011087431 A JP2011087431 A JP 2011087431A JP 2011087431 A JP2011087431 A JP 2011087431A JP 2012221301 A5 JP2012221301 A5 JP 2012221301A5
Authority
JP
Japan
Prior art keywords
semiconductor integrated
integrated circuit
temperature
circuit
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011087431A
Other languages
Japanese (ja)
Other versions
JP2012221301A (en
JP5296136B2 (en
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2011087431A external-priority patent/JP5296136B2/en
Priority to JP2011087431A priority Critical patent/JP5296136B2/en
Priority to CN201280016549.9A priority patent/CN103460159B/en
Priority to PCT/JP2012/059818 priority patent/WO2012141182A1/en
Priority to US14/009,593 priority patent/US8975951B2/en
Priority to EP12771976.3A priority patent/EP2698684B1/en
Publication of JP2012221301A publication Critical patent/JP2012221301A/en
Publication of JP2012221301A5 publication Critical patent/JP2012221301A5/ja
Publication of JP5296136B2 publication Critical patent/JP5296136B2/en
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (4)

電源回路と、
前記電源回路から供給される供給電圧により動作し、安定的に動作するために必要な下限電圧が温度の上昇に応じて低下する特性を備える半導体集積回路と、
前記半導体集積回路の温度を計測する温度センサと、
を含み、
前記電源回路は、前記計測される温度の上昇に応じて低下する前記半導体集積回路の下限電圧に合わせて、前記供給電圧を下げる
ことを特徴とする電子機器。
A power circuit;
A semiconductor integrated circuit that operates with a supply voltage supplied from the power supply circuit and has a characteristic that a lower limit voltage necessary for stable operation decreases with an increase in temperature ;
A temperature sensor for measuring the temperature of the semiconductor integrated circuit;
Including
The electronic device according to claim 1 , wherein the power supply circuit lowers the supply voltage in accordance with a lower limit voltage of the semiconductor integrated circuit that decreases as the measured temperature increases.
請求項1に記載の電子機器において、
前記電源回路は、前記計測される温度が所定の閾値以上になったときに、所定の下げ幅だけ前記供給電圧を下げる
ことを特徴とする電子機器。
The electronic device according to claim 1,
The electronic device according to claim 1, wherein the power supply circuit lowers the supply voltage by a predetermined decrease amount when the measured temperature becomes a predetermined threshold value or more.
電源回路と、
前記電源回路から供給される供給電圧により動作し、安定的に動作するために必要な下限電圧が温度の上昇に応じて低下する特性を備える半導体集積回路と、
前記半導体集積回路の温度を計測する温度センサと、
を含む電子機器の制御方法であって、
前記計測される温度を取得するステップと、
前記取得した温度の上昇に応じて低下する前記半導体集積回路の下限電圧に合わせて、前記電源回路が前記半導体集積回路に供給する供給電圧を下げるステップと、
を含むことを特徴とする電子機器の制御方法。
A power circuit;
A semiconductor integrated circuit that operates with a supply voltage supplied from the power supply circuit and has a characteristic that a lower limit voltage necessary for stable operation decreases with an increase in temperature ;
A temperature sensor for measuring the temperature of the semiconductor integrated circuit;
A method for controlling an electronic device including:
Obtaining the measured temperature;
Lowering the supply voltage that the power supply circuit supplies to the semiconductor integrated circuit in accordance with the lower limit voltage of the semiconductor integrated circuit that decreases as the acquired temperature rises;
A method for controlling an electronic device, comprising:
電源回路から供給される供給電圧により動作し、安定的に動作するために必要な下限電圧が温度の上昇に応じて低下する特性を備える半導体集積回路であって、
当該半導体集積回路の温度を計測する温度センサと、
前記計測される温度の上昇に応じて低下する当該半導体集積回路の下限電圧に合わせて、前記供給電圧を下げるよう前記電源回路に要求する手段と、
を含むことを特徴とする半導体集積回路。
A semiconductor integrated circuit that operates with a supply voltage supplied from a power supply circuit and has a characteristic that a lower limit voltage necessary for stable operation decreases with an increase in temperature ,
A temperature sensor for measuring the temperature of the semiconductor integrated circuit;
Means for requesting the power supply circuit to lower the supply voltage in accordance with a lower limit voltage of the semiconductor integrated circuit that decreases as the measured temperature rises;
A semiconductor integrated circuit comprising:
JP2011087431A 2011-04-11 2011-04-11 Electronic device, control method thereof, and semiconductor integrated circuit Active JP5296136B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011087431A JP5296136B2 (en) 2011-04-11 2011-04-11 Electronic device, control method thereof, and semiconductor integrated circuit
EP12771976.3A EP2698684B1 (en) 2011-04-11 2012-04-10 Semiconductor integrated circuit
PCT/JP2012/059818 WO2012141182A1 (en) 2011-04-11 2012-04-10 Semiconductor integrated circuit
US14/009,593 US8975951B2 (en) 2011-04-11 2012-04-10 Semiconductor integrated circuit
CN201280016549.9A CN103460159B (en) 2011-04-11 2012-04-10 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011087431A JP5296136B2 (en) 2011-04-11 2011-04-11 Electronic device, control method thereof, and semiconductor integrated circuit

Publications (3)

Publication Number Publication Date
JP2012221301A JP2012221301A (en) 2012-11-12
JP2012221301A5 true JP2012221301A5 (en) 2013-03-07
JP5296136B2 JP5296136B2 (en) 2013-09-25

Family

ID=47272711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011087431A Active JP5296136B2 (en) 2011-04-11 2011-04-11 Electronic device, control method thereof, and semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP5296136B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8975954B2 (en) * 2013-01-08 2015-03-10 Qualcomm Incorporated Method for performing adaptive voltage scaling (AVS) and integrated circuit configured to perform AVS
US9037882B2 (en) * 2013-02-27 2015-05-19 Qualcomm Incorporated System and method for thermal management in a portable computing device using thermal resistance values to predict optimum power levels
US8963620B2 (en) 2013-07-23 2015-02-24 International Business Machines Corporation Controlling circuit voltage and frequency based upon location-dependent temperature
JP2015130035A (en) 2014-01-07 2015-07-16 富士通株式会社 Semiconductor device and control method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007079848A (en) * 2005-09-13 2007-03-29 Sony Computer Entertainment Inc Power unit and electronic equipment using the same
JP2007165527A (en) * 2005-12-13 2007-06-28 Renesas Technology Corp Method of controlling semiconductor integrated circuit
JP2010526380A (en) * 2007-05-03 2010-07-29 ディーエスエム ソリューションズ,インコーポレイテッド Method and system for adaptive power management
JP5498047B2 (en) * 2009-04-01 2014-05-21 株式会社東芝 Semiconductor integrated circuit

Similar Documents

Publication Publication Date Title
MX2017015178A (en) Temperature control device with automatically adjustable backlighting.
WO2015068044A3 (en) Electronic cigarette overheating protection
EP2624429A3 (en) Method of forming a switched mode power supply controller device with an off mode and structure therefor
EP2685632A3 (en) Thermal control apparatus and methodology
JP2014016910A5 (en)
WO2011140491A3 (en) Circuit for controlling temperature and enabling testing of a semiconductor chip
PL2696572T3 (en) Power saving control method and electronic device supporting the same
JP2013250262A5 (en) Temperature sensor circuit
MX2015008943A (en) Semiconductor device having features to prevent reverse engineering.
WO2014140811A3 (en) Thermal management in electronic devices with yielding substrates
JP2012221301A5 (en)
WO2014182937A3 (en) Method and devices for non-intrusive power monitoring
EP2743796A3 (en) Electronic apparatus, method of controlling the same, and computer-readable recording medium
FR3009428B1 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH TEMPORARY COLLAGE VIA METAL LAYERS
FR3012669B1 (en) METHOD FOR MANUFACTURING A DEVICE COMPRISING AN INTEGRATED CIRCUIT AND PHOTOVOLTAIC CELLS
WO2013108004A3 (en) Domestic power controller
WO2013024301A3 (en) Radiation detector
HK1211715A1 (en) Electronic circuit with self-calibrated ptat current reference and method for actuating the same ptat
WO2013174558A3 (en) Converter for an electric machine with monitoring of the contact-connection of the semiconductor components
IN2014KN01437A (en)
HK1221315A1 (en) Control circuit, resonance circuit, electronic device, control method, control program, and semiconductor element
EP2549359A3 (en) Power control device and method therefor
FR3004000B1 (en) ELECTROLUMINESCENT DEVICE WITH INTEGRATED SENSOR AND METHOD FOR CONTROLLING THE TRANSMISSION OF THE DEVICE
JP2016516992A5 (en)
WO2014004454A3 (en) Power supply control