JP2012218314A - Method of manufacturing liquid injection head and method of manufacturing liquid injection device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a liquid injection head capable of achieving simplification of a step.SOLUTION: The method of manufacturing the liquid injection head 100 includes a first step of forming a piezoelectric element 40 on one surface 21 side of a first base plate 20, a second step of joining a second base plate 50 with a through-hole 56 on the one surface 21 side of the first base plate 20, a third step of blocking the through-hole 56 by a first tape 102, a fourth step of forming an insulating film 110 made of oxide silicon and covering the first tape 102, a fifth step of forming an opening 29 by wet etching on the other surface 22 side of the first base plate 20, a sixth step of blocking the opening 29 by a second tape 104, a seventh step of eliminating the insulating film 110, and an eighth step of peeling the first tape 102 and the second tape 104.

Description

  The present invention relates to a method for manufacturing a liquid ejecting head and a method for manufacturing a liquid ejecting apparatus.

  A typical example of a liquid ejecting head that ejects droplets is an ink jet recording head that ejects ink droplets. The ink jet recording head is formed on, for example, a flow path forming substrate on which a pressure generating chamber communicating with a nozzle hole and a reservoir communicating with the pressure generating chamber are formed, and one surface side of the flow path forming substrate. There is known a piezoelectric element including a piezoelectric element and a protective substrate that is bonded to the surface of the flow path forming substrate on the piezoelectric element side and protects the piezoelectric element. In addition, a drive circuit for driving the piezoelectric element is mounted on the protective substrate, and further, a through hole serving as a flow path of ink supplied to the pressure generating chamber and the piezoelectric element and the drive circuit are mounted on the protective substrate. There is one in which a through hole is formed through which a connection wiring for connecting is connected (see, for example, Patent Document 1).

  In such an ink jet recording head manufacturing method, first, the protective substrate having the through holes as described above is bonded to the flow path forming substrate. Next, a protective film is provided on the protective substrate so as to cover the through hole. Thereafter, for example, a KOH-resistant film having resistance to a potassium hydroxide solution (KOH solution) is provided on the protective substrate. Then, a pressure generating chamber is formed on the flow path forming substrate by anisotropic etching of the KOH solution.

JP 2004-148813 A

  The film resistant to the etching solution as described above is bonded to the protective substrate through, for example, a thermosetting adhesive. Therefore, it is necessary to perform a heat treatment for curing the adhesive, and in order to prevent the resistant film from being thermally contracted, the heat-up rate may have to be reduced. Therefore, the time for the heat treatment process may become long.

  Further, after the wet etching of the flow path forming substrate, the above-mentioned adhesive is peeled off. This adhesive peeling step is performed, for example, by burning the adhesive with a laser and then treating the residue with a chemical. .

  As described above, a large number of man-hours may be required for the bonding process of the resistant film.

  An object of some aspects of the present invention is to provide a method of manufacturing a liquid jet head that can simplify the process. Another object of some aspects of the present invention is to provide a method of manufacturing a liquid ejecting apparatus including the method of manufacturing the liquid ejecting head.

A method for manufacturing a liquid jet head according to the present invention includes:
A first step of forming a piezoelectric element on one side of the first substrate;
A second step of bonding a second substrate having a through hole formed on one side of the first substrate;
A third step of closing the through hole with a first tape;
A fourth step of forming an insulating film made of silicon oxide and covering the first tape;
A fifth step of forming an opening by wet etching on the other surface side of the first substrate;
A sixth step of closing the opening with a second tape;
A seventh step of removing the insulating film;
And an eighth step of peeling the first tape and the second tape.

  According to such a method for manufacturing a liquid jet head, it is not necessary to adhere a film having resistance to the etching liquid of the first substrate to the second substrate through the thermosetting adhesive. Therefore, the process can be simplified.

In the liquid jet head according to the present invention,
In the fourth step, the insulating film may be formed by a two-frequency plasma CVD method.

  According to such a method of manufacturing a liquid jet head, an insulating film can be formed at a lower temperature and in a shorter time than, for example, a single frequency plasma CVD method. Therefore, the process can be simplified while suppressing the first tape from being deteriorated by heat.

In the liquid jet head according to the present invention,
The first substrate may be silicon.

  According to such a method for manufacturing a liquid jet head, the process can be simplified.

In the liquid jet head according to the present invention,
In the eighth step, the first tape and the second tape may be peeled off by irradiation with ultraviolet rays.

  According to such a method of manufacturing a liquid jet head, the first tape and the second tape can be easily peeled off.

In the liquid jet head according to the present invention,
In the eighth step, the first tape and the second tape may be peeled off by heat treatment.

  According to such a method of manufacturing a liquid jet head, the first tape and the second tape can be easily peeled off.

In the liquid jet head according to the present invention,
In the seventh step, the insulating film may be removed by wet etching using a hydrofluoric acid solution.

  According to such a method of manufacturing a liquid jet head, the insulating film can be easily removed while suppressing the etching of the first substrate and the second substrate, and the first tape and the second tape.

In the liquid jet head according to the present invention,
In the fifth step, the opening may be formed by wet etching using a potassium hydroxide solution.

  According to such a method for manufacturing a liquid jet head, the process can be simplified.

In the liquid jet head according to the present invention,
In the fifth step, the etching rate for the insulating film may be lower than the etching rate for the first substrate.

  According to such a method for manufacturing a liquid jet head, the process can be simplified.

A method for manufacturing a liquid ejecting apparatus according to the present invention includes:
The method includes a step of manufacturing a liquid jet head by the method of manufacturing a liquid jet head according to the present invention.

  According to such a method for manufacturing a liquid ejecting apparatus, the liquid ejecting apparatus can be obtained by a simple process.

FIG. 3 is an exploded perspective view schematically illustrating the liquid ejecting head according to the embodiment. FIG. 3 is a plan view schematically showing the liquid ejecting head according to the embodiment. FIG. 3 is a cross-sectional view schematically illustrating the liquid ejecting head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the liquid jet head according to the embodiment. FIG. 3 is a perspective view schematically illustrating the liquid ejecting apparatus according to the embodiment.

  Preferred embodiments of the present invention will be described below with reference to the drawings.

1. Liquid Ejecting Head First, the liquid ejecting head according to the present embodiment will be described with reference to the drawings. FIG. 1 is an exploded perspective view schematically showing a liquid jet head 100 according to the present embodiment. FIG. 2 is a plan view schematically showing the liquid jet head 100 according to the present embodiment. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2 schematically showing the liquid jet head 100 according to the present embodiment.

  As illustrated in FIGS. 1 to 3, the liquid ejecting head 100 includes a first substrate 20, a piezoelectric element 40, and a second substrate 50. Further, the liquid ejecting head 100 can include the nozzle plate 10, the vibration plate 30, the drive circuit 60, and the compliance substrate 70. For convenience, the drive circuit 60 is not shown in FIG.

  The shape of the nozzle plate 10 is, for example, a plate shape. The material of the nozzle plate 10 is, for example, silicon or stainless steel (SUS). The nozzle plate 10 has nozzle holes 12. A droplet (ink droplet) is ejected from the nozzle hole 12. A plurality of nozzle holes 12 are provided according to the number of pressure generation chambers 24. In the illustrated example, since the pressure generating chambers 24 are provided in two rows, the nozzle plate 10 has the nozzle holes 12 arranged in two rows.

  The first substrate 20 is provided on the nozzle plate 10. The first substrate 20 has a first surface 21 and a second surface 22 that face each other. The first surface 21 can also be referred to as the upper surface of the first substrate 20, and the second surface 22 can also be referred to as the lower surface of the first substrate 20. As the first substrate 20, for example, a (110) -oriented silicon single crystal substrate can be used. The first substrate 20 defines a space between the nozzle plate 10 and the vibration plate 30, so that the pressure generation chamber 24, the supply path 26 that communicates with the pressure generation chamber 24, and the communication portion 28 that communicates with the supply path 26. And are provided. For example, the first substrate 20 can also be referred to as the flow path forming substrate 20.

  In the example shown in the figure, the pressure generation 24, the supply path 26, and the communication portion 28 are distinguished, but these are all liquid flow paths (also referred to as manifolds). A simple flow path may be designed in any way. For example, the supply path 26 has a shape in which a part of the flow path is narrowed in the illustrated example, but can be arbitrarily formed according to the design, and is not necessarily an essential configuration.

  For example, a plurality of pressure generation chambers 24 are provided. In the illustrated example, the pressure generating chambers 24 have a shape having a longitudinal direction and a short direction, and the pressure generating chambers 24 are provided in two rows along the short direction (Y-axis direction). . The volume of the pressure generation chamber 24 changes due to the deformation of the diaphragm 30. The pressure generation chamber 24 communicates with the nozzle hole 12, and ink droplets are ejected from the nozzle hole 12 when the volume of the pressure generation chamber 24 changes.

  The communication portion 28 can constitute a part of the reservoir 80 that serves as a common liquid storage portion for the plurality of pressure generation chambers 24. The communication unit 28 communicates with the plurality of pressure generation chambers 24 via the plurality of supply paths 26.

  The supply path 26 can include a first portion 26 a that communicates with the pressure generation chamber 24 and a second portion 26 b that communicates with the communication portion 28. The width of the first portion 26a (the length in the Y-axis direction) is narrower than the width of the pressure generating chamber 24 and the width of the second portion 26b. Thereby, the flow path resistance of the liquid (ink) flowing into the pressure generating chamber 24 from the communication portion 28 can be kept constant.

  The diaphragm 30 is formed on the first substrate 20. The shape of the diaphragm 30 is, for example, a plate shape. A through hole 32 is formed in the vibration plate 30. The through hole 32 penetrates the diaphragm 30 in the thickness direction (Z-axis direction). The through hole 32 communicates with the communication portion 28. The through hole 32 can constitute a part of the reservoir 80 serving as a liquid storage part.

  In the illustrated example, the vibration plate 30 includes a silicon oxide layer 34 and a zirconium oxide layer 36 formed on the silicon oxide layer 34. The diaphragm 30 has flexibility and can be deformed (bent) by the operation of the piezoelectric element 40.

  The piezoelectric element 40 is formed on the vibration plate 30. The piezoelectric element 40 is electrically connected to the drive circuit 60 and can operate (vibrate or deform) based on a signal from the drive circuit 60. The diaphragm 30 is deformed by the operation of the piezoelectric element 40, and the internal pressure of the pressure generating chamber 24 can be appropriately changed. The piezoelectric element 40 includes a first electrode 42, a piezoelectric layer 44, and a second electrode 46.

The first electrode 42 is formed on the diaphragm 30. The shape of the first electrode 42 is, for example, a layer shape or a thin film shape. The thickness of the first electrode 42 is, for example, not less than 50 nm and not more than 300 nm. The material of the first electrode 42 is, for example, various metals such as nickel, iridium, and platinum, their conductive oxides (for example, iridium oxide), composite oxides of strontium and ruthenium (SrRuO _x : SRO), lanthanum, and the like. And nickel (LaNiO _x : LNO). The first electrode 42 may have a single layer structure made of the materials exemplified above, or may have a structure in which a plurality of materials are stacked.

  The first electrode 42 is paired with the second electrode 46 to be one electrode for applying a voltage to the piezoelectric layer 44 (for example, a lower electrode formed below the piezoelectric layer 44). it can.

  The diaphragm 30 may not be provided, and the first electrode 42 may have a function as a diaphragm. Further, the piezoelectric element 40 itself may substantially double as a diaphragm.

  Although not shown, between the first electrode 42 and the vibration plate 30, for example, a layer that imparts adhesion between them, or a layer that imparts strength and conductivity may be formed. Examples of such layers include various metals such as titanium, nickel, iridium, and platinum, and oxide layers thereof.

  The piezoelectric layer 44 is formed on the first electrode 42. For example, a plurality of piezoelectric layers 44 are provided corresponding to the plurality of pressure generation chambers 24. In the illustrated example, since the pressure generating chambers 24 are provided in two rows, the piezoelectric layer 44 is also provided in two rows in the same manner.

The thickness of the piezoelectric layer 44 is, for example, not less than 300 nm and not more than 3000 nm. As the piezoelectric layer 44, a perovskite oxide piezoelectric material can be used. More specifically, the material of the piezoelectric layer 44 is, for example, lead zirconate titanate (Pb (Zr, Ti) O ₃ : PZT), lead zirconate titanate niobate (Pb (Zr, Ti, Nb) O ₃ : PZTN), barium titanate (BaTiO ₃ ), potassium sodium niobate ((K, Na) NbO ₃ ).

  The piezoelectric layer 44 can have piezoelectricity, and can be deformed when a voltage is applied by the first electrode 42 and the second electrode 46.

  The second electrode 46 is formed on the piezoelectric layer 44. The second electrode 46 is disposed to face the first electrode 42 with the piezoelectric layer 44 interposed therebetween. The shape of the second electrode 46 is, for example, a layered or thin film shape. The thickness of the second electrode 46 is, for example, not less than 50 nm and not more than 300 nm. As the material of the second electrode 46, for example, the materials listed as the material of the first electrode 42 can be used.

  One of the functions of the second electrode 46 is to form a pair with the first electrode 42 to apply a voltage to the piezoelectric layer 44 (for example, an upper portion formed above the piezoelectric layer 44. Electrode).

  A plurality of second electrodes 46 may be provided corresponding to the plurality of piezoelectric layers 44. The plurality of second electrodes 46 may be electrically separated from each other. On the other hand, the first electrode 42 may be a common electrode for the plurality of piezoelectric layers 44. That is, for the plurality of piezoelectric layers 44, the second electrode 46 may be an individual electrode, and the first electrode 42 may be a common electrode. Thereby, each of the plurality of piezoelectric layers 44 can be driven independently. Although not shown, the first electrode 42 may be an individual electrode and the second electrode 46 may be a common electrode.

  A lead electrode 48 is formed on the second electrode 46. The lead electrode 48 is pulled out from the vicinity of the end of the piezoelectric element 40 opposite to the reservoir 80 side, and extends to the diaphragm 30. The material of the lead electrode 48 is, for example, gold or copper.

  The second substrate 50 is formed on the vibration plate 30. More specifically, the second substrate 50 is bonded to the first surface 21 side of the first substrate 20 with the adhesive 90 via the vibration plate 30. The second substrate 50 may be a glass substrate or a ceramic substrate, but is preferably a (110) -oriented silicon single crystal substrate, like the first substrate 20. Thereby, the thermal expansion coefficient of the 2nd board | substrate 50 and the thermal expansion coefficient of the 1st board | substrate 20 can be made the same.

  The second substrate 50 has a third surface 51 and a fourth surface 52 that face each other. The third surface 51 can be said to be the lower surface of the second substrate 50, and the fourth surface 52 is also referred to as the upper surface of the second substrate 50. The third surface 51 faces the first surface 21 of the first substrate 20 with the diaphragm 30 interposed therebetween. For example, a recess 54 is formed in the third surface 51. The space 55 formed by the recess 54 can accommodate the piezoelectric element 40. In the illustrated example, the space 55 is formed by the third surface 51 that forms the recess 54, the upper surface of the diaphragm 30, and the side surface of the adhesive 90. The space 55 is large enough not to hinder the operation of the piezoelectric element 40. The space 55 may be sealed or may not be sealed. The piezoelectric element 40 can be protected by the second substrate 50. For example, the second substrate 50 can also be referred to as a protective substrate 50.

  A through hole 56 is formed in the second substrate 50. The through hole 56 penetrates from the third surface 51 to the fourth surface 52. The through hole 56 communicates with the communication portion 28 provided in the first substrate 20 through the through hole 32 provided in the vibration plate 30. The communication portion 28, the through hole 32, and the through hole 56 can constitute the reservoir 80. The reservoir 80 can temporarily store ink from the outside (for example, an ink cartridge). The ink in the reservoir 80 can be supplied to the pressure generating chamber 24 via the supply path 26.

  In the illustrated example, the common communication portion 28 is provided for the plurality of pressure generation chambers 24, but the communication portion 28 is divided into a plurality of pressure generation chambers 24, and the through holes 32 and 56 are provided. Only the reservoir may be used. Further, for example, only the pressure generation chamber 24 may be provided on the first substrate 20, and a reservoir and a supply path communicating with each pressure generation chamber 24 may be provided on the first substrate 20 and the vibration plate 30.

  A through hole 58 is further formed in the second substrate 50. The through hole 58 penetrates from the third surface 51 to the fourth surface 52. The vicinity of the end portion of the lead electrode 48 drawn out from the second electrode 46 is provided so as to be exposed in the through hole 58.

  The drive circuit 60 is provided on the second substrate 50 via the drive wiring 62. As the drive circuit 60, for example, a circuit board or a semiconductor integrated circuit (IC) can be used. The drive circuit 60 is connected to the lead electrode 48 via a connection wiring 64 made of a conductive wire such as a bonding wire. Thereby, the drive circuit 60 can input a drive signal to the piezoelectric element 40. Although not shown, an insulating layer made of silicon oxide or the like may be formed between the second substrate 50 and the drive wiring 62.

  The compliance substrate 70 is formed on the second substrate 50. The compliance substrate 70 can include a sealing film 72 and a fixing plate 74. The sealing film 72 is formed on the second substrate 50 and seals one opening of the reservoir 80 (one opening of the through hole 56). As the sealing film 72, for example, a polyphenylene sulfide (PPS) film can be used. The sealing film 72 can have flexibility with low rigidity.

  The fixing plate 74 is formed on the sealing film 72. A through hole 76 is formed in the fixing plate 74. The through hole 76 passes through the fixing plate 74 in the thickness direction, and is disposed above the through hole 56. That is, in the illustrated example, one opening of the reservoir 80 is sealed only by the sealing film 72.

  In the above example, the case where the liquid ejecting head 100 is an ink jet recording head has been described. However, the liquid ejecting head of the present embodiment is, for example, an electrode material ejecting head used for electrode formation such as a color material ejecting head, an organic EL display, and an FED (surface emitting display) used for manufacturing a color filter such as a liquid crystal display. It can also be used as a bio-organic matter ejecting head used for biochip manufacturing.

2. Next, a method for manufacturing the liquid jet head 100 according to this embodiment will be described with reference to the drawings. 4 to 14 are cross-sectional views schematically showing the manufacturing process of the liquid jet head 100 according to the present embodiment.

  As shown in FIG. 4, a silicon oxide layer 34 is formed on at least the first surface 21 of the first substrate 20. The silicon oxide layer 34 is formed by, for example, a thermal oxidation method. Next, a zirconium oxide layer 36 is formed on the silicon oxide layer 34. The zirconium oxide layer 36 is formed by sputtering, for example. The diaphragm 30 can be formed by the above steps.

  As shown in FIG. 5, the first electrode 42, the piezoelectric layer 44, and the second electrode 46 are formed on the diaphragm 30 in this order. The first electrode 42 and the second electrode 46 are formed by, for example, forming a conductive layer (not shown) by sputtering, plating, or vacuum deposition and then patterning the conductive layer. The piezoelectric layer 44 is formed by, for example, forming a piezoelectric layer (not shown) by a sol-gel method, a MOD (Metal Organic Deposition) method, a sputtering method, or a laser ablation method, and then patterning the piezoelectric layer. Is done. The patterning is performed by, for example, a photolithography technique and an etching technique. The patterning for forming the piezoelectric layer 44 and the patterning for forming the second electrode 46 may be performed at once. Through the above steps, the piezoelectric element 40 can be formed on the first surface 21 side (one surface side) of the first substrate 20 (first step).

  As shown in FIG. 6, the lead electrode 48 is formed from the second electrode 46 to the diaphragm 30. The lead electrode 48 is formed by, for example, film formation by sputtering and patterning.

  As shown in FIG. 7, the second substrate 50 in which the through holes 56 and 58 are formed on the first surface 21 side (more specifically, on the vibration plate 30), and the third surface 51 through the vibration plate 30. Then, bonding is performed so as to face the first surface 21 (second step). Then, the piezoelectric element 40 is accommodated in a space 55 formed by the third surface 51 (by the recess 54). The bonding of the second substrate 50 is performed using, for example, an adhesive 90. On the second substrate 50, drive wiring 62 is formed. The drive wiring 62 is formed by, for example, film formation by sputtering and patterning.

  As shown in FIG. 8, the first substrate 20 is thinned to a predetermined thickness. The thinning of the first substrate 20 is performed, for example, by grinding the second surface 22 and polishing it by a CMP (Chemical Mechanical Polishing) method. Thereby, the flatness of the 2nd surface 22 can be made high.

  As shown in FIG. 9, the 1st tape 102 is affixed on the 4th surface 52 of the 2nd board | substrate 50, and the through-holes 56 and 58 are block | closed with the 1st tape 102 (3rd process). The first tape 102 may be a UV peeling tape whose adhesive strength is reduced by ultraviolet rays (UV), or a heat peeling tape whose adhesive strength is reduced by heat (for example, a tape that is peeled off at about 100 ° C.). Good. The first tape 102 can prevent the insulating film 110 from entering the through holes 56 and 58 in the step of forming the insulating film 110 described later. The first tape 102 can be resistant to an etching solution used in a process of removing the insulating film 110 described later.

  As shown in FIG. 10, an insulating film 110 is formed and at least the first tape 102 is covered (fourth step). In the illustrated example, the insulating film 110 is formed so as to cover the first substrate 20, the second substrate 50, and the first tape 102 while avoiding the second surface 22 of the first substrate 20. The insulating film 110 is formed by, for example, a two-frequency plasma CVD (Chemical Vapor Deposition) method in which RF (Radio Frequency) is applied to both the plasma source side and the bias side. Specifically, the plasma source side frequency can be about 27 MHz, the plasma source side power can be about 300 W, the bias side frequency can be about 380 kHz, and the bias side power can be about 300 W. The insulating film 110 can be formed at a low temperature (for example, about 25 ° C.) by a two-frequency plasma CVD method. Therefore, it can suppress that the 1st tape 102 deteriorates with a heat | fever.

  The insulating film 110 is formed toward the fourth surface 52 of the second substrate 50 (from the upper side to the lower side), but since the film formation by the two-frequency plasma CVD method is easy to go around, the first substrate 20 The insulating film 120 can also be formed on the side surface of the second substrate 50 and the side surface of the second substrate 50.

As the insulating film 110, a material having an etching rate smaller than the etching rate for the first substrate 20 can be used in a wet etching process of the first substrate 20 described later. More specifically, the material of the insulating film 110 is silicon oxide (SiO ₂ ), silicon oxynitride (SiON), or diamond-like carbon (DLC).

  The insulating film 110 can suppress etching of the first substrate 20 other than the second surface 22 in the wet etching process of the first substrate 20. For example, when a silicon substrate is used as the first substrate 20, a silicon oxide film is used as the insulating film 110, and a potassium hydroxide (KOH) solution is used as an etchant, the etching rate for the first substrate 20 is 15 μm / hour or more. The etching rate for the insulating film 110 is not less than 0.04 μm / hour and not more than 0.08 μm / hour. Therefore, the insulating film 110 can protect the first tape 102, the second substrate 50, and the like from the etching solution. For example, the thickness of the first substrate 20 can be 20 μm or more and 100 μm or less, and the thickness of the insulating film 110 on the first tape 102 can be 0.3 μm or more and 2 μm or less. Since the deposition rate of the two-frequency plasma CVD method is higher than the deposition rate of the one-frequency plasma CVD method, the deposition time of the insulating film 110 can be shortened.

  When the first substrate 20 is wet-etched using the alkaline etching solution as described above (particularly when the silicon substrate is etched with a KOH solution), hydrogen may be generated. Then, the generated hydrogen may contact the piezoelectric layer through the through hole, and the piezoelectric element may deteriorate due to the reduction reaction. However, in the present embodiment, the insulating film 110 can suppress contact of hydrogen with the piezoelectric layer 44. That is, the insulating film 110 can also function as a hydrogen barrier film.

  As shown in FIG. 11, a mask film 120 having a predetermined shape is formed on the second surface 22 of the first substrate 20. As described above, by increasing the flatness of the second surface 22 by the CMP method, the adhesion between the second surface 22 and the mask film 120 can be improved. As a result, it is possible to suppress the etchant from penetrating between the second surface 22 and the mask film 120. The material of the mask film 120 is, for example, silicon oxide.

  As shown in FIG. 12, with the mask film 120 as a mask, the first substrate 20 is wet etched from the second surface 22 side (the other surface side), and the pressure generation chamber 24, the supply path 26, and the communication portion 28 are opened. The part 29 is formed (fifth step). An alkaline solution can be used as an etchant for wet etching. More specifically, a potassium hydroxide (KOH) solution, a sodium hydroxide (NaOH) solution, or the like can be used as the etching solution. When a (110) -oriented silicon substrate is used as the first substrate 20, anisotropic etching can be performed with the above-described etching solution. At the time of etching, the silicon oxide layer 34 can function as an etching stopper.

  As shown in FIG. 13, after removing the mask film 120, the second tape 104 is attached to the second surface 22 of the first substrate 20, and the opening 29 is closed with the second tape 104 (sixth step). Similarly to the first tape 102, the second tape 104 may be a UV peeling tape whose adhesive strength is reduced by ultraviolet rays (UV), or a thermal peeling tape whose adhesive strength is reduced by heat (for example, at about 100 ° C.). It may be a tape to be peeled off. The second tape 104 can be resistant to an etching solution used in a step of removing the insulating film 110 described later. The second tape 104 can suppress the etching solution from entering the opening 29 in the step of removing the insulating film 110.

  As shown in FIG. 14, the insulating film 110 is removed (seventh step). The insulating film 110 is removed by, for example, wet etching using a dilute hydrofluoric acid solution as an etchant. The dilute hydrofluoric acid solution has a high etching rate for the insulating film 120 made of, for example, silicon oxide. Therefore, the insulating film 110 can be easily removed in, for example, several tens of seconds while suppressing the etching of the substrates 20 and 50 and the tapes 102 and 104.

  As shown in FIG. 15, the 1st tape 102 and the 2nd tape 104 are peeled (8th process). When the tapes 102 and 104 are UV release tapes, the tapes 102 and 104 are released by irradiating with ultraviolet rays. When the tapes 102 and 104 are heat release tapes, the tapes 102 and 104 are peeled off by heat treatment.

  Next, a through hole 32 is formed in the diaphragm 30, and the through hole 56 and the opening 29 are communicated.

  As shown in FIG. 3, the drive circuit 60 is disposed on the drive wiring 62. Then, the drive circuit 60 and the lead electrode 48 are connected by the connection wiring 64. Next, the nozzle plate 10 is bonded to the second surface 22 of the first substrate 20. Thereby, the pressure generation chamber 24, the supply path 26, and the communication part 28 (reservoir 80) are formed. The first substrate 20 and the nozzle plate 10 are joined by, for example, an adhesive or a heat welding film. Next, the compliance substrate 70 is bonded onto the second substrate 50.

  In addition, the process of arrange | positioning the drive circuit 60, the process of joining the nozzle plate 10, and the process of joining the compliance board | substrate 70 do not ask | require any further.

  The liquid jet head 100 according to the present embodiment can be manufactured through the above steps.

  According to the method for manufacturing the liquid ejecting head 100, the insulating film 110 is formed so as to cover at least the first tape 102. More specifically, the insulating film 110 can be formed so as to cover the first substrate 20, the second substrate 50, and the first tape 102 while avoiding the second surface 22. In the step of wet etching the first substrate 20, the etching rate for the insulating film 110 is smaller than the etching rate for the first substrate 20. Therefore, the insulating film 110 can suppress etching other than the second surface 22 of the first substrate 20 in the wet etching process of the first substrate 20. Therefore, in the method of manufacturing the liquid ejecting head 100, as described above, there is no need to adhere the film having resistance to the etching liquid of the first substrate to the second substrate through the thermosetting adhesive. . Therefore, according to the method of manufacturing the liquid ejecting head 100, the process can be simplified.

  According to the method for manufacturing the liquid jet head 100, the insulating film 110 can be formed by a two-frequency plasma CVD method. In the two-frequency plasma CVD method, for example, the film can be formed at a lower temperature and in a shorter time than the one-frequency plasma CVD method. Therefore, according to the method of manufacturing the liquid jet head 100, the process can be simplified while suppressing the first tape 102 from being deteriorated by heat.

  According to the method of manufacturing the liquid jet head 100, the material of the first substrate 20 can be silicon, and the material of the insulating film 110 can be silicon oxide. Thereby, in the wet etching process of the first substrate 20, the etching rate for the insulating film 110 can be more reliably made lower than the etching rate for the first substrate 20. Furthermore, for example, the manufacturing cost can be reduced as compared with the case where the first substrate is wet-etched using a polyparaphenylene terephthalamide (PPTA) film as a resistant film.

  According to the method of manufacturing the liquid ejecting head 100, the first tape 102 and the second tape 104 can be peeled off by irradiating with ultraviolet rays. As described above, when the film having resistance to the etchant of the first substrate is bonded to the second substrate through the thermosetting adhesive, the adhesive peeling process is performed by, for example, laser bonding. After burning off the agent, the residue is treated with chemicals. In the method of manufacturing the liquid ejecting head 100, since the thermosetting adhesive is not used for joining the tapes 102 and 104 and forming the insulating film 110, it is not necessary to perform the laser irradiation or chemical treatment as described above. That is, the tapes 102 and 104 can be easily peeled off. Furthermore, when the adhesive as described above is used, the surface from which the adhesive is peeled may become dirty. However, according to the method of manufacturing the liquid ejecting head 100, such a problem can be avoided.

  According to the method for manufacturing the liquid jet head 100, the first tape 102 and the second tape 104 can be peeled off by heat treatment. Therefore, as described above, the tapes 102 and 104 can be easily peeled off.

  According to the method for manufacturing the liquid jet head 100, the insulating film 110 made of silicon oxide can be removed by wet etching using a hydrofluoric acid solution. Therefore, the insulating film 110 can be easily removed while suppressing the etching of the substrates 20 and 50 and the tapes 102 and 104.

3. Next, the liquid ejecting apparatus according to the present embodiment will be described with reference to the drawings. FIG. 16 is a perspective view schematically illustrating the liquid ejecting apparatus 700 according to the present embodiment.

  The liquid ejecting apparatus 700 includes a liquid ejecting head manufactured by the method of manufacturing a liquid ejecting head according to the present invention. Hereinafter, an example using the liquid ejecting head 100 manufactured by the method of manufacturing a liquid ejecting head according to the invention will be described.

  As illustrated in FIG. 16, the liquid ejecting apparatus 700 includes a head unit 730, a driving unit 710, and a control unit 760. The liquid ejecting apparatus 700 further includes an apparatus main body 720, a paper feeding unit 750, a tray 721 on which the recording paper P is installed, a discharge port 722 for discharging the recording paper P, and an apparatus main body 720. And an operation panel 770 disposed on the upper surface.

  The head unit 730 includes an ink jet recording head (hereinafter, also simply referred to as “head”) configured from the liquid ejecting head 100 described above. The head unit 730 further includes an ink cartridge 731 that supplies ink to the head, and a transport unit (carriage) 732 on which the head and the ink cartridge 731 are mounted.

  The drive unit 710 can reciprocate the head unit 730. The drive unit 710 includes a carriage motor 741 serving as a drive source for the head unit 730, and a reciprocating mechanism 742 that receives the rotation of the carriage motor 741 and reciprocates the head unit 730.

  The reciprocating mechanism 742 includes a carriage guide shaft 744 supported at both ends by a frame (not shown), and a timing belt 743 extending in parallel with the carriage guide shaft 744. The carriage guide shaft 744 supports the carriage 732 while allowing the carriage 732 to freely reciprocate. Further, the carriage 732 is fixed to a part of the timing belt 743. When the timing belt 743 is caused to travel by the operation of the carriage motor 741, it is guided to the carriage guide shaft 744 and the head unit 730 reciprocates. During this reciprocation, ink is appropriately discharged from the head, and printing on the recording paper P is performed.

  In the present embodiment, an example of a liquid ejecting apparatus that performs printing while both the liquid ejecting head 100 and the recording paper P move is shown, but the liquid ejecting apparatus of the present invention includes the liquid ejecting head 100 and the recording. Any mechanism may be used as long as the paper P is printed on the recording paper P by changing its position relative to each other. Further, in the present embodiment, an example is shown in which printing is performed on the recording paper P. However, the recording medium that can be printed by the liquid ejecting apparatus of the present invention is not limited to paper, and may be cloth, film, A wide range of media such as metal can be used, and the configuration can be changed as appropriate.

  The control unit 760 can control the head unit 730, the drive unit 710, and the paper feed unit 750.

  The paper feeding unit 750 can feed the recording paper P from the tray 721 to the head unit 730 side. The paper feed unit 750 includes a paper feed motor 751 serving as a drive source thereof, and a paper feed roller 752 that rotates by the operation of the paper feed motor 751. The paper feed roller 752 includes a driven roller 752a and a drive roller 752b that face each other up and down across the feeding path of the recording paper P. The drive roller 752b is connected to the paper feed motor 751. When the paper supply unit 750 is driven by the control unit 760, the recording paper P is sent so as to pass below the head unit 730. The head unit 730, the drive unit 710, the control unit 760, and the paper feed unit 750 are provided inside the apparatus main body 720.

  In addition, embodiment mentioned above and a modification are examples, Comprising: It is not necessarily limited to these. For example, it is possible to appropriately combine each embodiment and each modification.

  Although the embodiments of the present invention have been described in detail as described above, those skilled in the art will readily understand that many modifications are possible without substantially departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention.

10 nozzle plate, 12 nozzle holes, 20 first substrate, 21 first surface,
22 second surface, 24 pressure generating chamber, 26 supply path, 26a first portion,
26b 2nd part, 28 communication part, 29 opening part, 30 diaphragm, 32 through-hole,
34 silicon oxide layer, 36 zirconium oxide layer, 40 piezoelectric element, 42 first electrode,
44 piezoelectric layer, 46 second electrode, 48 lead electrode, 50 second substrate, 51 third surface,
52 4th surface, 54 recessed part, 55 space, 56 through-hole, 58 through-hole,
60 drive circuit, 62 drive wiring, 64 connection wiring, 70 compliance board,
72 sealing film, 74 fixing plate, 76 through hole, 80 reservoir, 90 adhesive,
100 Liquid ejecting head, 102 First tape, 104 Second tape, 110 Insulating film,
120 mask film, 700 liquid ejecting apparatus, 710 driving unit, 720 apparatus main body,
721 tray, 722 outlet, 730 head unit,
731 Ink cartridge, 732 carriage, 741 carriage motor,
742 reciprocating mechanism, 743 timing belt, 744 carriage guide shaft,
750 paper feed unit, 751 paper feed motor, 752 paper feed roller,
752a driven roller, 752b drive roller, 760 controller,
770 Operation panel

Claims (9)

A first step of forming a piezoelectric element on one side of the first substrate;
A second step of bonding a second substrate having a through hole formed on one side of the first substrate;
A third step of closing the through hole with a first tape;
A fourth step of forming an insulating film made of silicon oxide and covering the first tape;
A fifth step of forming an opening by wet etching on the other surface side of the first substrate;
A sixth step of closing the opening with a second tape;
A seventh step of removing the insulating film;
And an eighth step of peeling the first tape and the second tape. In claim 1,
In the fourth step, the insulating film is formed by a two-frequency plasma CVD method. In claim 1 or 2,
The method of manufacturing a liquid jet head, wherein the first substrate is silicon. In any one of Claim 1 to 3,
In the eighth step, the method of manufacturing a liquid jet head, wherein the first tape and the second tape are peeled off by irradiation with ultraviolet rays. In any one of Claim 1 to 3,
In the eighth step, the method of manufacturing a liquid jet head, wherein the first tape and the second tape are peeled off by heat treatment. In any one of Claim 1 to 5,
In the seventh step, the insulating film is removed by wet etching using a hydrofluoric acid solution. In any one of Claim 1 to 6,
In the fifth step, the opening is formed by wet etching using a potassium hydroxide solution. In any one of Claims 1-7,
In the fifth step, the method of manufacturing a liquid jet head, wherein an etching rate with respect to the insulating film is lower than an etching rate with respect to the first substrate.   A method for manufacturing a droplet ejecting apparatus, comprising a step of manufacturing a liquid ejecting head by the method for manufacturing a droplet ejecting head according to claim 1.

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