JP2012240366A - Piezoelectric element, head and device for jetting liquid - Google Patents

Piezoelectric element, head and device for jetting liquid Download PDF

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Publication number
JP2012240366A
JP2012240366A JP2011114782A JP2011114782A JP2012240366A JP 2012240366 A JP2012240366 A JP 2012240366A JP 2011114782 A JP2011114782 A JP 2011114782A JP 2011114782 A JP2011114782 A JP 2011114782A JP 2012240366 A JP2012240366 A JP 2012240366A
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Prior art keywords
piezoelectric
electrode
layer
insulator layer
liquid ejecting
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JP2011114782A
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Japanese (ja)
Inventor
Naoto Yokoyama
直人 横山
Tsutomu Kojima
力 小島
Eiki Hirai
栄樹 平井
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Seiko Epson Corp
セイコーエプソン株式会社
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Priority to JP2011114782A priority Critical patent/JP2012240366A/en
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Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric element that can suppress generation of cracks in a piezoelectric layer and provides high reliability.SOLUTION: The piezoelectric element 100 is formed on a first electrode 10 and upward the first electrode 10, and includes a piezoelectric layer 20 having a first Young's modulus, a second electrode 30 formed above the piezoelectric layer 20, and an insulating layer 40 having a second Young's modulus larger than the first Young's modulus. The piezoelectric layer 20 has a part 22 sandwiched by the first electrode 10 and the second electrode 30. The insulating layer 40 is adjacent to the outside of the sandwiched part 22.

Description

  The present invention relates to a piezoelectric element, a liquid ejecting head, and a liquid ejecting apparatus.
  For example, in a liquid ejecting apparatus such as an ink jet printer, a liquid ejecting head that ejects droplets of ink or the like is known. The liquid ejecting head includes a piezoelectric element for changing the pressure in the pressure chamber. The piezoelectric element has a piezoelectric layer sandwiched between an upper electrode and a lower electrode, and the diaphragm can be bent when the piezoelectric layer is deformed by a drive signal or the like. Accordingly, the liquid ejecting head can eject ink or the like supplied from the nozzle hole into the pressure generating chamber.
  The piezoelectric layer of such a piezoelectric element has an active part sandwiched between the upper electrode and the lower electrode, and an inactive part not sandwiched between the upper electrode and the lower electrode (see Patent Document 1). The active portion is a portion that is actively driven by a drive signal or the like, and stress may concentrate on the interface between the active portion and the inactive portion near the lower electrode. This stress may cause cracks in the piezoelectric layer, which may reduce the reliability of the piezoelectric element.
JP 2009-172878 A
  One of the objects according to some aspects of the present invention is to provide a piezoelectric element that can suppress generation of cracks and has high reliability. Another object of some aspects of the present invention is to provide a liquid ejecting head and a liquid ejecting apparatus having the piezoelectric element.
The piezoelectric element according to the present invention is
A first electrode;
A piezoelectric layer formed above the first electrode and having a first Young's modulus;
A second electrode formed above the piezoelectric layer;
An insulator layer having a second Young's modulus greater than the first Young's modulus;
The piezoelectric layer has a portion sandwiched between the first electrode and the second electrode,
The insulator layer is adjacent to the outside of the sandwiched portion.
  According to such a piezoelectric element, the displacement is suppressed by the insulator layer in a portion of the active portion located in the vicinity of the interface between the active portion and the insulator layer. Thereby, it can suppress that stress concentrates on the interface of the active part of the 1st electrode vicinity, and an insulator layer. Therefore, it is possible to suppress the generation of cracks in the piezoelectric layer. As a result, such a piezoelectric element can have high reliability.
  In the description of the present invention, the word “upper” is, for example, “forms another specific thing (hereinafter referred to as“ B ”)“ above ”a specific thing (hereinafter referred to as“ A ”)”. Etc. In the description according to the present invention, in the case of this example, the case where B is directly formed on A and the case where B is formed on A via another are included. The word “upward” is used.
In the piezoelectric element according to the present invention,
And further including another first electrode,
The insulator layer may be formed so as to avoid a region between the first electrode and the other first electrode.
  According to such a piezoelectric element, a desired amount of displacement can be obtained. For example, when an insulator layer is formed between the adjacent first electrodes, the displacement of the active part is significantly suppressed by the insulator layer, and a desired displacement amount may not be obtained.
In the piezoelectric element according to the present invention,
And a member formed above the second electrode,
The member may be disposed above an outer periphery of the sandwiched portion.
  According to such a piezoelectric element, the displacement of the active portion near the outer periphery of the second electrode can be suppressed by the member formed above the second electrode. Therefore, it can suppress that stress concentrates on the interface of the active part and insulator layer near the 2nd electrode.
In the piezoelectric element according to the present invention,
The member may be metallic.
  According to such a piezoelectric element, the metallic member can be formed in the same process as the wiring electrically connected to the second electrode. Therefore, a new process is not required to form a metallic member, and an increase in man-hours can be prevented.
In the piezoelectric element according to the present invention,
The sandwiched portion has a rectangular planar shape,
The insulator layer may be formed adjacent to a short side of the sandwiched portion.
  Such a piezoelectric element can have high reliability.
In the piezoelectric element according to the present invention,
The length of the insulator layer in the direction along the short side may be larger than the length of the short side.
  According to such a piezoelectric element, displacement near the interface between the active portion and the insulator layer can be suppressed more reliably.
A liquid ejecting head according to the present invention includes:
The piezoelectric element according to the present invention is included.
  According to such a liquid jet head, since the piezoelectric element according to the present invention is included, high reliability can be obtained.
A liquid ejecting apparatus according to the present invention includes:
The liquid ejecting head according to the invention is included.
  According to such a liquid ejecting apparatus, since the liquid ejecting head according to the present invention is included, high reliability can be obtained.
The top view which shows typically the piezoelectric element which concerns on this embodiment. FIG. 3 is a cross-sectional view schematically showing the piezoelectric element according to the embodiment. FIG. 3 is a cross-sectional view schematically showing the piezoelectric element according to the embodiment. FIG. 3 is a cross-sectional view schematically showing the piezoelectric element according to the embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric element which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric element which concerns on this embodiment. The figure which shows typically the model which modeled the piezoelectric element which concerns on this embodiment. The figure which shows typically the model which modeled the piezoelectric element which concerns on a comparative example. The top view which shows typically the piezoelectric element which concerns on the 1st modification of this embodiment. Sectional drawing which shows typically the piezoelectric element which concerns on the 1st modification of this embodiment. The top view which shows typically the piezoelectric element which concerns on the 2nd modification of this embodiment. Sectional drawing which shows typically the piezoelectric element which concerns on the 2nd modification of this embodiment. Sectional drawing which shows typically the piezoelectric element which concerns on the 2nd modification of this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric element which concerns on the 2nd modification of this embodiment. Sectional drawing which shows typically the manufacturing process of the piezoelectric element which concerns on the 2nd modification of this embodiment. FIG. 3 is a plan view schematically showing the liquid ejecting head according to the embodiment. FIG. 3 is a cross-sectional view schematically illustrating the liquid ejecting head according to the embodiment. FIG. 3 is an exploded perspective view schematically illustrating the liquid ejecting head according to the embodiment. FIG. 3 is a perspective view schematically illustrating the liquid ejecting apparatus according to the embodiment.
  Preferred embodiments of the present invention will be described below with reference to the drawings.
1. Piezoelectric Element First, the piezoelectric element according to the present embodiment will be described with reference to the drawings. FIG. 1 is a plan view schematically showing a piezoelectric element 100 according to this embodiment. 2 is a cross-sectional view taken along the line II-II of FIG. 1 schematically showing the piezoelectric element 100 according to the present embodiment. 3 is a cross-sectional view taken along the line III-III of FIG. 1 schematically showing the piezoelectric element 100 according to the present embodiment. 4 is a cross-sectional view taken along the line IV-IV in FIG. 1 schematically showing the piezoelectric element 100 according to the present embodiment.
  As shown in FIGS. 1 to 4, the piezoelectric element 100 includes a first electrode 10, a piezoelectric layer 20, a second electrode 30, and an insulator layer 40. The piezoelectric element 100 is formed on the substrate 1, for example.
  The substrate 1 is a flat plate formed of, for example, a semiconductor or an insulator. The substrate 1 may be a single layer or a structure in which a plurality of layers are stacked. The internal structure of the substrate 1 is not limited as long as the upper surface is planar. For example, the substrate 1 may have a structure in which a space or the like is formed.
  The substrate 1 may include a diaphragm that is flexible and can be deformed (bent) by the operation of the piezoelectric layer 20. Examples of the material of the diaphragm include silicon oxide, zirconium oxide, and a laminate thereof.
  The first electrode 10 is formed on the substrate 1. The shape of the first electrode 10 is, for example, a layer shape or a thin film shape. The thickness (length in the Z-axis direction) of the first electrode 10 is, for example, not less than 50 nm and not more than 300 nm. The planar shape of the first electrode 10 (the shape viewed from the Z-axis direction) is not particularly limited as long as the piezoelectric layer 20 can be disposed between the second electrodes 30 when they are disposed to face each other. . In the example shown in FIG. 1, the first electrode 10 is a rectangle having a long side 10a along the X-axis direction and a short side 10b along the Y-axis direction.
  One first electrode 10 may be provided, or a plurality of first electrodes 10 may be provided. In the illustrated example, two first electrodes 10 are provided. The two first electrodes 10 may be arranged in the Y-axis direction as shown in FIG. The first electrode 10 (one first electrode 10) and the other first electrode 10 (the other first electrode 10) may be arranged in parallel with each other.
Examples of the material of the first electrode 10 include various metals such as nickel, iridium, and platinum, conductive oxides thereof (for example, iridium oxide), composite oxides of strontium and ruthenium (SrRuO x : SRO), A composite oxide of lanthanum and nickel (LaNiO x : LNO) can be given. The first electrode layer 10 may have a single-layer structure made of the materials exemplified above, or may have a structure in which a plurality of materials are stacked.
  The first electrode 10 may be paired with the second electrode 30 to be one electrode for applying a voltage to the piezoelectric layer 20 (for example, a lower electrode formed below the piezoelectric layer 20). it can.
  In addition, the board | substrate 1 does not have a diaphragm, but the 1st electrode 10 may have a function as a diaphragm. That is, the first electrode 10 has a function as one electrode for applying a voltage to the piezoelectric layer 20 and a function as a diaphragm that can be deformed by the operation of the piezoelectric layer 20. May be.
  Moreover, although not shown in figure, between the 1st electrode 10 and the board | substrate 1, the layer which provides both adhesiveness, and the layer which provides intensity | strength and electroconductivity may be formed, for example. Examples of such layers include various metals such as titanium, nickel, iridium, and platinum, and oxide layers thereof.
  The piezoelectric layer 20 is formed on the first electrode 10. The thickness of the piezoelectric layer 20 is, for example, not less than 300 nm and not more than 3000 nm.
  The piezoelectric layer 20 has a portion 22 sandwiched between the first electrode 10 and the second electrode 30. The portion 22 of the piezoelectric layer 20 can be actively deformed when a voltage is applied by the first electrode 10 and the second electrode 30. Therefore, the portion 22 of the piezoelectric layer 20 can also be referred to as the active portion 22. It can be said that the active portion 22 is a substantially driven portion. On the other hand, the portion of the piezoelectric layer 20 that is not sandwiched between the first electrode 10 and the second electrode 30 can also be referred to as an inactive portion that is not actively driven.
  A plurality of active portions 22 are formed corresponding to the plurality of first electrodes 10. The shape of the active portion 22 is not particularly limited, but in the example illustrated in FIG. 1, the active portion 22 is a rectangle having a long side 22 a along the X-axis direction and a short side 22 b along the Y-axis direction.
  As shown in FIGS. 1 and 4, an opening 24 may be formed in the piezoelectric layer 20. The opening 24 is formed between the adjacent first electrodes 10 in a plan view (viewed from the Z-axis direction). The planar shape of the opening 24 is not particularly limited. The opening 24 can suppress crosstalk between the adjacent active portions 22.
  As shown in FIGS. 1 and 2, an opening 26 may be formed in the piezoelectric layer 20. The opening 26 is provided on the first electrode 10. A wiring portion 34 is formed in the opening 26, and the wiring portion 34 is connected to the first electrode 10. The wiring part 34 is electrically connected to an external power source (not shown), and a voltage can be applied to the first electrode 10 via the wiring part 34. The material of the wiring part 34 is the same as the material of the 2nd electrode 30 mentioned later, for example.
As the piezoelectric layer 20, a perovskite oxide piezoelectric material can be used. More specifically, examples of the material of the piezoelectric layer 20 include lead zirconate titanate (Pb (Zr, Ti) O 3 : PZT) and lead zirconate titanate niobate (Pb (Zr, Ti, Nb). ) O 3 : PZTN). The Young's modulus (first Young's modulus) of the piezoelectric layer 20 is, for example, 50 GPa or more and 100 GPa or less.
  The second electrode 30 is formed on the piezoelectric layer 20. The second electrode 30 is disposed to face the first electrode 10 with the piezoelectric layer 20 in between. The shape of the second electrode 30 is, for example, a layered or thin film shape. The thickness of the second electrode 30 is, for example, not less than 50 nm and not more than 300 nm. The planar shape of the second electrode 30 is not particularly limited as long as the piezoelectric body layer 20 can be disposed between the two electrodes 30 when facing the first electrode 10.
  As a material of the 2nd electrode 30, what was enumerated above as a material of the 1st electrode 10 is applicable, for example. One of the functions of the second electrode 30 is to form a pair with the first electrode 10 to apply a voltage to the piezoelectric layer 20 (for example, an upper portion formed above the piezoelectric layer 20). Electrode).
  In the illustrated example, a plurality of first electrodes 10 are provided corresponding to the plurality of active portions 22. The plurality of first electrodes 10 are electrically separated from each other. On the other hand, one second electrode 30 is provided for the plurality of active portions 22 and is a common electrode for the plurality of active portions 22. That is, the first electrode 10 can be an individual electrode, and the second electrode 30 can be a common electrode. Thereby, each of the some active part 22 can be driven independently.
  The insulator layer 40 is formed adjacent to the outside of the active portion 22. As shown in FIGS. 1 to 3, an opening 28 is formed in the piezoelectric layer 20, and an insulator layer 40 may be formed so as to fill the opening 28. As shown in FIG. 1, the insulator layer 40 is formed, for example, avoiding a region between adjacent first electrodes 10 (between the first electrode 10 and another first electrode 10). More specifically, the insulator layer 40 is formed adjacent to the short side 22 b of the active portion 22. In the illustrated example, two insulator layers 40 are formed adjacent to each of the two short sides 22b, but may be formed adjacent to only one of the short sides 22b.
  The insulator layer 40 may be formed anywhere as long as it is adjacent to the outside of the active portion 22, for example, may be formed adjacent to the long side 22 a of the active portion 22, or active It may be formed surrounding the portion 22. In the example shown in FIG. 2, the insulator layer 40 is formed on the first electrode 10, but the + X side end face 11 of the first electrode 10 is flush with the + X side end face 23 of the active portion 22. In this case, the insulator layer 40 may be formed on the substrate 1.
  The thickness of the insulator layer 40 is preferably equal to or greater than the thickness of the piezoelectric layer 20. Thereby, the rigidity of the insulator layer 40 can be further increased. In the example shown in FIGS. 2 and 3, the thickness of the insulator layer 40 is the same as the thickness of the piezoelectric layer 20.
  The planar shape of the insulator layer 40 is not particularly limited, but in the example shown in FIG. For example, the length L in the direction along the short side 22b (Y-axis direction) of the insulator layer 40 is larger than the length of the short side 22b. That is, the insulator layer 40 is formed across the first electrode 10 in the Y-axis direction.
  For example, the insulator layer 40 is disposed so as not to overlap the second electrode 30 in plan view. More specifically, an opening 32 is formed in the second electrode 30, and the insulator layer 40 is disposed in the opening 32 in plan view. In the example shown in FIG. 2, the end surface 31 on the + X side of the second electrode 30 disposed on the active portion 22 is flush with the end surface 23 of the active portion 22, but the end surface 31 is more in the + X direction than the end surface 23. May be located. That is, the second electrode 30 may be formed on the insulator layer 40.
The Young's modulus (second Young's modulus) of the insulating layer 40 is larger than the Young's modulus (first Young's modulus) of the piezoelectric layer 20. The Young's modulus of the insulator layer 40 is, for example, 150 GPa or more and 400 GPa or less. The material of the insulator layer 40 is not particularly limited as long as it has an insulating property and has a Young's modulus larger than that of the piezoelectric layer 20. Specifically, the material of the insulator layer 40 is zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Al 2 O 3 —SiO 2 , SiC—BeO, MgO. -SiO 2, BaTiO 3, KNO 3 , NaNO 2, BiTiO 3, SrBiTiO 2, BiFeO 3 and the like.
  The piezoelectric element 100 as described above may be applied to, for example, a liquid ejecting head or a liquid ejecting apparatus (ink jet printer) using the liquid ejecting head as a piezoelectric actuator that pressurizes the liquid in the pressure generating chamber. The piezoelectric layer may be used for other purposes such as a piezoelectric sensor that detects deformation of the piezoelectric layer as an electrical signal.
  The piezoelectric element 100 according to the present embodiment has, for example, the following characteristics.
  According to the piezoelectric element 100, the insulator layer 40 having a Young's modulus larger than the Young's modulus of the piezoelectric layer 20 is formed adjacent to the outside of the active portion 22. Therefore, in the portion of the active portion 22 located near the interface between the active portion 22 and the insulator layer 40, the displacement is suppressed by the insulator layer 40. Thereby, it can suppress that a stress concentrates on the interface of the active part 22 and the insulator layer 40 of the 1st electrode 10 vicinity. Accordingly, the occurrence of cracks in the piezoelectric layer 20 can be suppressed. As a result, the piezoelectric element 100 can have high reliability.
  According to the piezoelectric element 100, the insulator layer 40 can be formed while avoiding a region between the adjacent first electrodes 10 (between the first electrode 10 and the other first electrode 10). Therefore, a desired amount of displacement can be obtained. For example, when an insulator layer is formed between the adjacent first electrodes, the displacement of the active part is significantly suppressed by the insulator layer, and a desired displacement amount may not be obtained. Such a problem can be avoided in the piezoelectric element 100 according to the present embodiment.
  According to the piezoelectric element 100, the insulator layer 40 is formed adjacent to the short side 22b of the active portion 22, and the length L in the direction along the short side 22b of the insulator layer 40 (Y-axis direction) is short. It can be larger than the length of the side 22b. Therefore, displacement near the interface between the active portion 22 and the insulator layer 40 can be suppressed more reliably. For example, if the length of the insulator layer in the Y-axis direction is smaller than the length of the short side of the active part, an interface between the active part and the inactive part of the piezoelectric layer is formed on the first electrode, Stress may be concentrated.
2. Next, a method for manufacturing the piezoelectric element 100 according to this embodiment will be described with reference to the drawings. 5 and 6 are cross-sectional views schematically showing the manufacturing process of the piezoelectric element 100 according to the present embodiment, and correspond to FIG.
  As shown in FIG. 5, the first electrode 10 is formed on the substrate 1. The first electrode 10 is formed, for example, by forming a conductive layer (not shown) by sputtering, plating, vacuum deposition, or the like, and patterning the conductive layer. The patterning is performed by, for example, a photolithography technique and an etching technique.
  Next, the piezoelectric layer 20 a is formed on the first electrode 10. The piezoelectric layer 20a is formed by, for example, a sol-gel method, a MOD (Metal Organic Deposition) method, a sputtering method, a laser ablation method, or a MOCVD (Metal Organic Chemical Vapor Deposition) method.
  As shown in FIG. 6, the piezoelectric layer 20a is patterned to form openings 26 and. At the same time, the opening 24 (see FIG. 4) can be formed. Thereby, the piezoelectric layer 20 can be formed.
  As shown in FIG. 2, the insulator layer 40 is formed in the opening 28. The insulator layer 40 is formed by, for example, an ink jet method.
  Next, the second electrode 30 is formed on the piezoelectric layer 20. The second electrode 30 is formed by, for example, forming a conductive layer (not shown) by sputtering, plating, vacuum deposition, or the like, and patterning the conductive layer. In the step of forming the second electrode 30, the wiring 34 can be formed.
  Through the above steps, the piezoelectric element 100 according to this embodiment can be manufactured.
  According to the method for manufacturing the piezoelectric element 100, the piezoelectric element 100 having high reliability can be obtained.
3. Experimental Example Next, an experimental example of the piezoelectric element according to the present embodiment will be described with reference to the drawings. The present invention is not limited by the following experimental examples.
  As an experimental example, a simulation was performed modeling the piezoelectric element according to the present embodiment. In the simulation, the stress applied to the piezoelectric element was analyzed by the finite element method.
FIG. 7 is a diagram schematically showing a model M1 obtained by modeling the piezoelectric element according to the present embodiment. In the model M1, as shown in FIG. 7, a laminated body of a silicon oxide (SiO 2 ) layer having a thickness of 1100 nm and a zirconium oxide (ZrO 2 ) layer having a thickness of 400 nm was used as a substrate. A platinum (Pt) layer having a thickness of 200 nm was used as the first electrode. A PZT layer having a thickness of 1350 nm was used as the piezoelectric layer. As the second electrode, an iridium (Ir) layer having a thickness of 50 nm was used. A zirconium oxide (ZrO 2 ) layer having a thickness of 1350 nm was used as the insulator layer.
  FIG. 8 is a diagram schematically illustrating a model M2 obtained by modeling the piezoelectric element according to the comparative example. The model M2 is the same as the model M1 except that a PZT layer having a thickness of 1350 nm is used instead of the insulator layer.
In the simulation, the silicon oxide layer had a Young's modulus of 75 GPa, a density of 2.2 g / cm 3 , and a residual stress (tensile stress) of 220 MPa. The zirconium oxide layer had a Young's modulus of 190 GPa, a density of 6.4 g / cm 3 , and a residual stress (compressive stress) of 170 MPa. The platinum layer had a Young's modulus of 200 GPa, a density of 16 g / cm 3 , and a residual stress (compressive stress) of 170 MPa. The PZT layer had a Young's modulus of 75 GPa, a density of 6.4 g / cm 3 , and a residual stress (compressive stress) of 45 MPa. The iridium layer had a Young's modulus of 200 GPa, a density of 22.5 g / cm 3 , and a residual stress (tensile stress) of 1200 MPa.
As shown in FIGS. 7 and 8, the model M1 has an interface (dotted line) between the PZT layer (piezoelectric layer) and the ZrO 2 layer (insulator layer) in the vicinity of the platinum layer (first electrode) as compared with the model M2. It was found that the stress was small in the part surrounded by. Therefore, it has been found that the insulator layer can suppress stress concentration at the interface between the active portion near the first electrode and the insulator layer.
4). 4. Modified example of piezoelectric element 4.1. Next, a piezoelectric element according to a first modification of the present embodiment will be described with reference to the drawings. FIG. 9 is a plan view schematically showing a piezoelectric element 200 according to a first modification of the present embodiment. FIG. 10 is a cross-sectional view taken along line XX of FIG. 9 schematically showing a piezoelectric element 200 according to a first modification of the present embodiment.
  Hereinafter, in the piezoelectric element 200 according to the first modification of the present embodiment, members having the same functions as those of the constituent members of the piezoelectric element 100 according to the present embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. To do. The same applies to the piezoelectric element 300 according to a second modification of the present embodiment described later.
  The piezoelectric element 200 has a member 50 as shown in FIGS. The member 50 is, for example, metallic. Therefore, the member 50 can also be referred to as the metal member 50. More specifically, examples of the material of the metal member 50 include gold, nickel-chromium alloy, platinum, and iridium.
  The metal member 50 is formed on the second electrode 30 above the outer periphery of the active portion 22. In the example shown in FIG. 9, the metal member 50 is formed above the outer periphery along the short side 22 b of the active portion 22. For example, the metal member 50 is formed adjacent to the insulator layer 40 in a plan view. In the illustrated example, the planar shape of the metal member 50 is a rectangle, but is not particularly limited.
  According to the piezoelectric element 200, the displacement of the active portion 22 near the outer periphery of the second electrode 30 can be suppressed by the metal member 50. Therefore, it is possible to prevent stress from concentrating on the interface between the active portion 22 and the insulator layer 40 in the vicinity of the second electrode 30. Therefore, according to the piezoelectric element 200, the insulator layer 40 can suppress stress concentration on the interface between the active portion 22 and the insulator layer 40 in the vicinity of the first electrode 10, and the metal member 50 can It is possible to suppress stress concentration at the interface between the active portion 22 and the insulator layer 40 in the vicinity of the second electrode 30.
  Furthermore, the metal member 50 can be formed in the same process as a wiring (not shown) electrically connected to the second electrode 30. Therefore, a new process is not required to form the metal member 50, and an increase in man-hours can be prevented. The metal member 50 is formed by, for example, forming a film by a sputtering method, a plating method, or the like and then patterning the film into a predetermined shape.
4.2. Next, a piezoelectric element according to a second modification of the present embodiment will be described with reference to the drawings. FIG. 11 is a plan view schematically showing a piezoelectric element 300 according to a second modification of the present embodiment. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 11 schematically showing a piezoelectric element 300 according to a second modification of the present embodiment. FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. 11 schematically showing a piezoelectric element 300 according to a second modification of the present embodiment.
  In the example of the piezoelectric element 100, as shown in FIGS. 1 to 3, a part of the upper surface of the piezoelectric layer 20 is exposed. On the other hand, in the piezoelectric element 300, as shown in FIGS. 11 to 13, the upper surface of the piezoelectric layer 20 is not exposed, and the piezoelectric layer 20 is formed under the second electrode 30 or the wiring 34. ing. In the illustrated example, the piezoelectric element 300 has an insulator layer 40 formed in a portion not covered with the second electrode 30 and the wiring 34 in a plan view.
  According to the piezoelectric element 300, the area of the insulator layer 40 can be increased as compared with the piezoelectric element 100. Therefore, displacement near the interface between the active portion 22 and the insulator layer 40 can be suppressed more reliably.
  The piezoelectric element 300 is manufactured as follows, for example. 14 and 15 are cross-sectional views schematically showing the manufacturing process of the piezoelectric element 300 according to the second modification of the present embodiment, and correspond to FIG. In the description of the method of manufacturing the piezoelectric element 300, the same parts as those of the method of manufacturing the piezoelectric element 100 are omitted or simplified.
  In the method for manufacturing the piezoelectric element 300, after forming the piezoelectric layer 20a (see FIG. 5), the opening 26 is formed as shown in FIG. Next, a conductive layer (not shown) is formed on the entire surface, and the conductive layer is patterned to form the second electrode 30 and the wiring 34. Next, as shown in FIG. 15, the piezoelectric layer 20 a is etched by using the second electrode 30 and the wiring 34 as a mask to form the piezoelectric layer 20. Then, as shown in FIG. 12, an insulator layer 40 is formed in the opening 28 of the piezoelectric layer 20.
  According to the method for manufacturing the piezoelectric element 300, the piezoelectric layer 20 a can be etched using the second electrode 30 and the wiring 34 as a mask without using a resist to form the opening 28. Therefore, the positional accuracy of the insulator layer 40 with respect to the second electrode 30 can be increased.
5. Liquid Ejecting Head Next, the liquid ejecting head according to the present embodiment will be described with reference to the drawings. FIG. 16 is a plan view schematically showing a main part of the liquid jet head 600 according to the present embodiment. FIG. 17 is a cross-sectional view taken along the line XVII-XVII in FIG. 16 schematically illustrating the main part of the liquid jet head 600 according to the present embodiment. FIG. 18 is an exploded perspective view of the liquid jet head 600 according to the present embodiment. FIG. 18 shows the state shown in FIGS. 16 and 17 and the upside down state.
  The liquid ejecting head 600 includes the piezoelectric element according to the present invention. Below, the example using the piezoelectric element 300 is demonstrated as a piezoelectric element which concerns on this invention.
  As shown in FIGS. 16 to 18, the liquid ejecting head 600 includes, for example, a nozzle plate 610, a flow path forming substrate 620, a vibration plate 630, a piezoelectric element 300, and a housing 640. In FIG. 18, the piezoelectric element 100 is illustrated in a simplified manner.
  The nozzle plate 610 has a nozzle hole 612 as shown in FIGS. 17 and 18. A liquid (ink) is ejected from the nozzle hole 612. The nozzle plate 610 is provided with a plurality of nozzle holes 612, for example. In the example illustrated in FIG. 18, the plurality of nozzle holes 612 are formed in a line. Examples of the material of the nozzle plate 610 include silicon and stainless steel (SUS).
  The flow path forming substrate 620 is provided on the nozzle plate 610 (lower in the example of FIG. 18). Examples of the material of the flow path forming substrate 620 include silicon. The flow path forming substrate 620 divides the space between the nozzle plate 610 and the vibration plate 630, so that the reservoir (liquid storage unit) 624, the supply port 626 that communicates with the reservoir 624, and the pressure that communicates with the supply port 626 Generation chamber 622 is provided. In the example shown in FIG. 18, the reservoir 624, the supply port 626, and the pressure generation chamber 622 are distinguished, but these are all liquid flow paths (for example, can be called manifolds) Such a flow path may be designed in any way. For example, although the supply port 626 has a shape in which a part of the flow path is narrowed in the illustrated example, it can be arbitrarily formed according to the design and is not necessarily an essential configuration.
  In FIG. 18, the pressure generating chamber 622 and the supply port 626 are illustrated in a simplified manner.
  The reservoir 624 can temporarily store ink supplied from the outside (for example, an ink cartridge) through a through hole 628 provided in the vibration plate 630. The ink in the reservoir 624 can be supplied to the pressure generation chamber 622 via the supply port 626.
  The volume of the pressure generation chamber 622 changes due to the deformation of the diaphragm 630. The pressure generation chamber 622 communicates with the nozzle hole 612, and ink or the like is discharged from the nozzle hole 612 when the volume of the pressure generation chamber 622 changes. A plurality of pressure generation chambers 622 are provided corresponding to the plurality of active portions 22. As shown in FIG. 16, a part of the insulator layer 40 may overlap a part of the pressure generation chamber 622 in a plan view. In the example shown in FIG. 16, the length L in the Y-axis direction of the insulator layer 40 is larger than the length of the pressure generating chamber 622 in the Y-axis direction. That is, the insulator layer 40 is formed across the pressure generation chamber 622 in the Y-axis direction. Thereby, the displacement of the interface vicinity of the active part 22 and the insulator layer 40 can be suppressed more reliably.
  Note that the reservoir 624 and the supply port 626 may be provided on a member (not shown) different from the flow path forming substrate 620 as long as the reservoir 624 and the supply port 626 communicate with the pressure generation chamber 622.
  The diaphragm 630 is provided on the flow path forming substrate 620 (lower in the example of FIG. 18). In the illustrated example, the diaphragm 630 is formed by laminating a silicon oxide layer 632 and a zirconium oxide layer 634 in this order from the flow path forming substrate 620 side. The silicon oxide layer 632 can function as an etching stopper when the pressure generating chamber 622 and the like are formed by wet etching using a potassium hydroxide solution (KOH solution), for example.
  The piezoelectric element 300 is provided on the diaphragm 630 (lower in the example of FIG. 18). The piezoelectric element 300 is electrically connected to a drive circuit (not shown) and can operate (vibrate or deform) based on a signal from the drive circuit. The diaphragm 630 can be deformed by the operation of the piezoelectric layer 20 to change the internal pressure of the pressure generation chamber 622 as appropriate.
  As shown in FIG. 18, the housing 640 can accommodate the nozzle plate 610, the flow path forming substrate 620, the vibration plate 630, and the piezoelectric element 300. Examples of the material of the housing 640 include a resin and a metal.
  The liquid ejecting head 600 includes the piezoelectric element 300. Therefore, the liquid ejecting head 600 can have high reliability.
  In the above example, the case where the liquid ejecting head 600 is an ink jet recording head has been described. However, the liquid ejecting head of the present embodiment is, for example, an electrode material ejecting head used for electrode formation such as a color material ejecting head, an organic EL display, and an FED (surface emitting display) used for manufacturing a color filter such as a liquid crystal display. It can also be used as a bio-organic matter ejecting head used for biochip manufacturing.
6). Next, the liquid ejecting apparatus according to the present embodiment will be described with reference to the drawings. FIG. 19 is a perspective view schematically showing the liquid ejecting apparatus 700 according to the present embodiment.
  The liquid ejecting apparatus 700 includes the liquid ejecting head according to the invention. Hereinafter, an example in which the liquid ejecting head 600 is used as the liquid ejecting head according to the invention will be described.
  As illustrated in FIG. 19, the liquid ejecting apparatus 700 includes a head unit 730, a driving unit 710, and a control unit 760. The liquid ejecting apparatus 700 further includes an apparatus main body 720, a paper feeding unit 750, a tray 721 for installing the recording paper P, a discharge port 722 for discharging the recording paper P, and an operation arranged on the upper surface of the apparatus main body 720 A panel 770.
  The head unit 730 includes an ink jet recording head (hereinafter, also simply referred to as “head”) configured from the liquid ejecting head 600 described above. The head unit 730 further includes an ink cartridge 731 that supplies ink to the head, and a transport unit (carriage) 732 on which the head and the ink cartridge 731 are mounted.
  The drive unit 710 can reciprocate the head unit 730. The drive unit 710 includes a carriage motor 741 serving as a drive source for the head unit 730, and a reciprocating mechanism 742 that receives the rotation of the carriage motor 741 and reciprocates the head unit 730.
  The reciprocating mechanism 742 includes a carriage guide shaft 744 supported at both ends by a frame (not shown), and a timing belt 743 extending in parallel with the carriage guide shaft 744. The carriage guide shaft 744 supports the carriage 732 while allowing the carriage 732 to freely reciprocate. Further, the carriage 732 is fixed to a part of the timing belt 743. When the timing belt 743 is caused to travel by the operation of the carriage motor 741, it is guided to the carriage guide shaft 744 and the head unit 730 reciprocates. During this reciprocation, ink is appropriately discharged from the head, and printing on the recording paper P is performed.
  In the present embodiment, an example of a liquid ejecting apparatus that performs printing while both the liquid ejecting head 600 and the recording paper P move is shown, but the liquid ejecting apparatus of the present invention includes the liquid ejecting head 600 and the recording. Any mechanism may be used as long as the paper P is printed on the recording paper P with its position relatively changed. Further, in the present embodiment, an example is shown in which printing is performed on the recording paper P. However, the recording medium that can be printed by the liquid ejecting apparatus of the present invention is not limited to paper, and may be cloth, film, A wide range of media such as metal can be used, and the configuration can be changed as appropriate.
  The control unit 760 can control the head unit 730, the drive unit 710, and the paper feed unit 750.
  The paper feeding unit 750 can feed the recording paper P from the tray 721 to the head unit 730 side. The paper feed unit 750 includes a paper feed motor 751 serving as a drive source thereof, and a paper feed roller 752 that rotates by the operation of the paper feed motor 751. The paper feed roller 752 includes a driven roller 752a and a drive roller 752b that face each other up and down across the feeding path of the recording paper P. The drive roller 752b is connected to the paper feed motor 751. When the paper supply unit 750 is driven by the control unit 760, the recording paper P is sent so as to pass below the head unit 730. The head unit 730, the drive unit 710, the control unit 760, and the paper feed unit 750 are provided inside the apparatus main body 720.
  The liquid ejecting apparatus 700 has the liquid ejecting head 600. Therefore, the liquid ejecting apparatus 700 can have high reliability.
  In addition, embodiment mentioned above and a modification are examples, Comprising: It is not necessarily limited to these. For example, it is possible to appropriately combine each embodiment and each modification.
  Although the embodiments of the present invention have been described in detail as described above, those skilled in the art will readily understand that many modifications are possible without substantially departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention.
1 substrate, 10 first electrode, 10a long side, 10b short side, 11 end face,
20 piezoelectric layer, 20a piezoelectric layer, 22 active portion, 22a long side, 22b short side,
23 end face, 24 opening, 26 opening, 28 opening, 30 second electrode,
31 end face, 32 opening, 34 wiring, 40 insulator layer, 50 metal member,
100 to 300 piezoelectric element, 600 liquid ejecting head, 610 nozzle plate,
612 nozzle hole, 620 flow path forming substrate, 622 pressure generating chamber, 624 reservoir,
626 supply port, 628 through-hole, 630 diaphragm, 632 silicon oxide layer,
634 Zirconium oxide layer, 640 housing, 700 liquid ejecting apparatus, 710 drive unit,
720 device main body, 721 tray, 722 discharge port, 730 head unit,
731 Ink cartridge, 732 carriage, 741 carriage motor,
742 reciprocating mechanism, 743 timing belt, 744 carriage guide shaft,
750 paper feed unit, 751 paper feed motor, 752 paper feed roller,
752a driven roller, 752b drive roller, 760 controller,
770 Operation panel

Claims (8)

  1. A first electrode;
    A piezoelectric layer formed above the first electrode and having a first Young's modulus;
    A second electrode formed above the piezoelectric layer;
    An insulator layer having a second Young's modulus greater than the first Young's modulus;
    The piezoelectric layer has a portion sandwiched between the first electrode and the second electrode,
    The piezoelectric element in which the insulator layer is adjacent to the outside of the sandwiched portion.
  2. In claim 1,
    And further including another first electrode,
    The insulator layer is a piezoelectric element formed so as to avoid a region between the first electrode and the other first electrode.
  3. In claim 1 or 2,
    And a member formed above the second electrode,
    The member is a piezoelectric element disposed above an outer periphery of the sandwiched portion.
  4. In claim 3,
    The member is a piezoelectric element that is metallic.
  5. In any one of Claims 1 thru | or 4,
    The sandwiched portion has a rectangular planar shape,
    The insulator layer is a piezoelectric element formed adjacent to a short side of the sandwiched portion.
  6. In claim 5,
    The piezoelectric element, wherein a length of the insulator layer in a direction along the short side is larger than a length of the short side.
  7.   A liquid ejecting head including the piezoelectric element according to claim 1.
  8.   A liquid ejecting apparatus comprising the liquid ejecting head according to claim 7.
JP2011114782A 2011-05-23 2011-05-23 Piezoelectric element, head and device for jetting liquid Withdrawn JP2012240366A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017196787A (en) * 2016-04-27 2017-11-02 セイコーエプソン株式会社 Manufacturing method for liquid injection head and manufacturing method for mems device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017196787A (en) * 2016-04-27 2017-11-02 セイコーエプソン株式会社 Manufacturing method for liquid injection head and manufacturing method for mems device

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