JP2012214825A - Method for supplying silicon hydride gas - Google Patents

Method for supplying silicon hydride gas Download PDF

Info

Publication number
JP2012214825A
JP2012214825A JP2011079157A JP2011079157A JP2012214825A JP 2012214825 A JP2012214825 A JP 2012214825A JP 2011079157 A JP2011079157 A JP 2011079157A JP 2011079157 A JP2011079157 A JP 2011079157A JP 2012214825 A JP2012214825 A JP 2012214825A
Authority
JP
Japan
Prior art keywords
gas
silicon hydride
hydride gas
concentration
supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011079157A
Other languages
Japanese (ja)
Other versions
JP5690188B2 (en
Inventor
Katsunori Takada
克則 高田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Nippon Sanso Corp
Original Assignee
Taiyo Nippon Sanso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Nippon Sanso Corp filed Critical Taiyo Nippon Sanso Corp
Priority to JP2011079157A priority Critical patent/JP5690188B2/en
Publication of JP2012214825A publication Critical patent/JP2012214825A/en
Application granted granted Critical
Publication of JP5690188B2 publication Critical patent/JP5690188B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for supplying a silicon hydride gas that reliably supplies the silicon hydride gas in which impurities are not mixed to a device using the silicon hydride gas.SOLUTION: The concentration of the silicon hydride gas, e.g., oxygen-containing compound in monosilane, e.g., disiloxane, supplied to the device using the silicon hydride gas is measured. When the measured concentration of the oxygen-containing compound is lower than a predetermined concentration, the supply of silicon hydride gas is started to the device using the silicon hydride gas.

Description

本発明は、珪素水素化物ガスの供給方法に関し、詳しくは、シリコンを含む薄膜を気相成長させる気相成長装置のような装置にモノシランをはじめとする珪素水素化物ガスを供給する方法に関する。   The present invention relates to a method for supplying silicon hydride gas, and more particularly to a method for supplying silicon hydride gas such as monosilane to an apparatus such as a vapor phase growth apparatus for vapor phase growth of a thin film containing silicon.

モノシランをはじめとする珪素水素化物ガスは、主に半導体製造や太陽電池製造における原料ガスとして用いられている。このような用途において、珪素水素化物ガス中に水分や酸素などの酸素含有化合物が不純物として混入していると、製造する半導体や太陽電池の機能を低下させる要因となる。一方、珪素水素化物ガスは、配管内面などに吸着している微量水分を化学反応によって除去するためのガスとしても用いられている（例えば、特許文献１参照。）。   Silicon hydride gas such as monosilane is mainly used as a raw material gas in semiconductor manufacturing and solar cell manufacturing. In such an application, if an oxygen-containing compound such as moisture or oxygen is mixed in the silicon hydride gas as an impurity, it causes a reduction in the function of the semiconductor or solar cell to be manufactured. On the other hand, silicon hydride gas is also used as a gas for removing a small amount of moisture adsorbed on the inner surface of a pipe by a chemical reaction (for example, see Patent Document 1).

特開２００９−１６７０７３号公報JP 2009-167073 A

一般に、プロセスガスとして珪素水素化物ガスを供給する配管に対するガスシリンダー交換後のパージ操作は、大気成分除去のために行う不活性ガスパージと、大気成分除去に加え不活性ガス置換状態となったラインを珪素水素化物ガスに置換するためのプロセスガスパージとで行われており、プロセスガスパージは、あらかじめ設定した回数のパージ操作を繰り返すこととしている。しかし、プロセスガスパージを複数回繰り返す場合、配管内から大気成分が完全に除去された後も無駄なプロセスガスパージを行ってプロセスガスを無駄に消費したり、逆に、規定回数を繰り返しても配管内から大気成分を完全に除去できず、製造装置に供給するプロセスガスに不純物が混入して不良品が発生するおそれがある。   In general, the purge operation after replacing the gas cylinder for piping for supplying silicon hydride gas as a process gas is performed using an inert gas purge for removing atmospheric components and a line that has been replaced with an inert gas in addition to removing atmospheric components. A process gas purge for replacing with a silicon hydride gas is performed, and the process gas purge repeats a purge operation a preset number of times. However, if the process gas purge is repeated multiple times, the process gas is wasted by exhausting the process gas purge after the atmospheric components are completely removed from the pipe, or conversely, the process gas purge is repeated within the specified number of times. Atmospheric components cannot be completely removed from the process, and impurities may be mixed into the process gas supplied to the manufacturing apparatus, resulting in defective products.

このため、パージガスの一部を抜き出して大気成分の濃度を測定し、大気成分の除去を確認することも行われているが、プロセスガスである珪素水素化物ガスは反応性が高いため、大気成分濃度を測定するために利用できる分析法や分析装置が限られ、また、短時間で測定結果を求めることが困難であった。   For this reason, a part of the purge gas is extracted and the concentration of atmospheric components is measured to confirm the removal of atmospheric components. However, since silicon hydride gas, which is a process gas, is highly reactive, Analysis methods and analyzers that can be used to measure the concentration are limited, and it is difficult to obtain measurement results in a short time.

そこで本発明は、珪素水素化物ガスを使用する装置に不純物が混入していない珪素水素化物ガスを確実に供給することができる珪素水素化物ガスの供給方法を提供することを目的としている。   Accordingly, an object of the present invention is to provide a silicon hydride gas supply method that can reliably supply a silicon hydride gas in which impurities are not mixed into an apparatus that uses the silicon hydride gas.

上記目的を達成するため、本発明の珪素水素化物ガスの供給方法は、珪素水素化物ガス使用装置に供給する珪素水素化物ガス中の酸素含有化合物の濃度を測定し、測定した酸素含有化合物の濃度があらかじめ設定された濃度を下回ったときに珪素水素化物ガス使用装置への珪素水素化物ガスを開始することを特徴とし、特に、前記酸素含有化合物が、分子構造中にＳｉ−Ｏ−Ｓｉ結合を有するシロキサンであること、前記珪素水素化物ガスがモノシランであることを特徴としている。   In order to achieve the above object, the silicon hydride gas supply method of the present invention measures the concentration of the oxygen-containing compound in the silicon hydride gas supplied to the silicon hydride gas use device, and measures the measured concentration of the oxygen-containing compound. Starting with a silicon hydride gas to the silicon hydride gas using device when the concentration falls below a preset concentration, in particular, the oxygen-containing compound has a Si-O-Si bond in the molecular structure. The silicon hydride gas is monosilane.

また、本発明の珪素水素化物ガスの供給方法は、第２の構成として、ガス容器に充填した珪素水素化物ガスをガス供給装置を介して珪素水素化物ガス使用装置に供給する際に、前記ガス供給装置から前記珪素水素化物ガス使用装置に珪素水素化物ガス供給弁を閉じた状態で前記ガス供給装置に設けられているガス容器接続用口金に前記ガス容器を接続した後、前記珪素水素化物ガス供給弁と前記ガス容器接続用口金との間の配管に対して不活性ガスを用いた不活性ガスパージを行った後、前記ガス容器からガス容器接続用口金を介して珪素水素化物ガス供給弁とガス容器接続用口金との間の配管に珪素水素化物ガスを導入してプロセスガスパージを行うとともに、前記配管内のガスの一部を分析用ガスとして抜き出して分析器に導入し、該分析器で前記分析用ガスに含まれるシロキサンの濃度を測定し、測定したシロキサンの濃度があらかじめ設定された濃度を下回ったときに、前記プロセスガスパージを終了し、前記珪素水素化物ガス供給弁を開いて前記珪素水素化物ガス使用装置への珪素水素化物ガスの供給を開始することを特徴としている。   Moreover, the silicon hydride gas supply method according to the present invention includes, as a second configuration, when the silicon hydride gas filled in the gas container is supplied to the silicon hydride gas using device via the gas supply device. The silicon hydride gas is connected to the gas container connection base provided in the gas supply device with the silicon hydride gas supply valve closed from the supply device to the silicon hydride gas using device. After performing an inert gas purge using an inert gas on the pipe between the supply valve and the gas container connection base, a silicon hydride gas supply valve from the gas container through the gas container connection base; Silicon hydride gas is introduced into the pipe between the gas container connection base and a process gas purge is performed, and part of the gas in the pipe is extracted as an analysis gas and introduced into the analyzer. The concentration of siloxane contained in the analysis gas is measured with a vessel, and when the measured concentration of siloxane falls below a preset concentration, the process gas purge is terminated, and the silicon hydride gas supply valve is opened. The supply of the silicon hydride gas to the silicon hydride gas using device is started.

本発明の珪素水素化物ガスの供給方法によれば、大気由来の水分や酸素を測定せず、珪素水素化物ガスが水分や酸素と反応して生成した酸素含有化合物、例えばシロキサンの濃度を測定するので、ガスクロマトグラフなどで容易に分析することが可能となり、高純度の珪素水素化物ガスを供給することができる。   According to the silicon hydride gas supply method of the present invention, the concentration of oxygen-containing compounds such as siloxane generated by the reaction of the silicon hydride gas with moisture or oxygen is measured without measuring moisture or oxygen derived from the atmosphere. Therefore, it becomes possible to easily analyze with a gas chromatograph or the like, and a high purity silicon hydride gas can be supplied.

本発明の珪素水素化物ガスの供給方法を適用したガス供給装置の一例を示す説明図である。It is explanatory drawing which shows an example of the gas supply apparatus to which the supply method of the silicon hydride gas of this invention is applied.

珪素水素化物ガス、例えばモノシランは、ガス容器（ガスシリンダー）１１にあらかじめ設定された圧力で充填された状態で珪素水素化物ガス使用設備に搬送され、ガス容器１１をガス供給装置（シリンダーキャビネット）１２に接続し、ガス供給装置１２を介して半導体製造装置や太陽電池製造装置などの珪素水素化物ガス使用装置に供給される。   Silicon hydride gas, for example, monosilane, is transferred to a silicon hydride gas use facility in a state where the gas container (gas cylinder) 11 is filled with a preset pressure, and the gas container 11 is supplied to a gas supply device (cylinder cabinet) 12. To a silicon hydride gas using device such as a semiconductor manufacturing device or a solar cell manufacturing device via a gas supply device 12.

本形態例に示すガス供給装置１２は、ガス容器１１を接続するガス容器接続用口金１３を有するガス容器接続用配管１４と、珪素水素化物ガス供給弁１５を介して珪素水素化物ガス使用装置に接続した珪素水素化物ガス供給配管１６と、不活性ガス供給弁１７を介して外部の不活性ガス供給源に接続した不活性ガス供給配管１８と、パージ操作中のパージガスを排気弁１９を介して外部に排出する排気配管２０と、パージ操作中にガス容器接続用口金１３と不活性ガス供給弁１７との間の供給配管系統２１から分岐し、分析弁２２及び減圧弁２３を介して分析器２４に接続した分析用配管２５と、分析用配管２５内の分析用ガスを分析ガス排気弁２６を介して排気する分析ガス排気配管２７とを備えており、これらの配管や弁を、ガス漏洩検知器２８及びダンパー２９を備えたキャビネット３０内に収容している。   The gas supply device 12 shown in this embodiment is connected to a silicon hydride gas use device via a gas container connection pipe 14 having a gas container connection base 13 for connecting the gas container 11 and a silicon hydride gas supply valve 15. A connected silicon hydride gas supply pipe 16, an inert gas supply pipe 18 connected to an external inert gas supply source via an inert gas supply valve 17, and a purge gas being purged via an exhaust valve 19 The exhaust pipe 20 to be discharged to the outside, and the supply pipe system 21 between the gas container connection base 13 and the inert gas supply valve 17 are branched during the purge operation, and the analyzer is connected via the analysis valve 22 and the pressure reducing valve 23. 24 and an analysis gas exhaust pipe 27 for exhausting the analysis gas in the analysis pipe 25 through an analysis gas exhaust valve 26. These pipes and valves are connected to a gas leak. Inspection Vessel 28 and is housed in a cabinet 30 having a damper 29.

以下、ガス容器１１内の珪素水素化物ガスを珪素水素化物ガス使用装置に供給する手順を説明する。まず、全ての弁を閉じた状態あるいは不活性ガス供給弁１７をあらかじめ設定された開度に開いた状態でガス容器１１をガス容器接続用口金１３に接続する。次に、不活性ガス供給弁１７を開き、供給配管系統２１内に不活性ガス、例えば窒素ガスを導入して供給配管系統２１内をあらかじめ設定された圧力に加圧する。不活性ガス供給弁１７を閉じて供給配管系統２１内をあらかじめ設定された時間加圧状態に保持した後、排気弁１９を開いて供給配管系統２１内の不活性ガスを排出する。この不活性ガスによる供給配管系統２１内の加圧と排気とを行う不活性ガスパージをあらかじめ設定された回数だけ繰り返す。   Hereinafter, a procedure for supplying the silicon hydride gas in the gas container 11 to the silicon hydride gas using device will be described. First, the gas container 11 is connected to the gas container connection base 13 with all valves closed or with the inert gas supply valve 17 opened to a preset opening degree. Next, the inert gas supply valve 17 is opened, and an inert gas such as nitrogen gas is introduced into the supply piping system 21 to pressurize the supply piping system 21 to a preset pressure. After the inert gas supply valve 17 is closed and the inside of the supply piping system 21 is kept in a pressurized state for a preset time, the exhaust valve 19 is opened to discharge the inert gas in the supply piping system 21. The inert gas purge for pressurizing and exhausting the supply piping system 21 with the inert gas is repeated a preset number of times.

不活性ガスパージを終了した後、ガス容器１１内の珪素水素化物ガスを用いたプロセスガスパージを行う。プロセスガスパージでは、不活性ガス供給弁１７及び排気弁１９を閉じた状態でガス容器１１の容器元弁１１ａを開き、ガス容器１１内の珪素水素化物ガスを供給配管系統２１内に導入して供給配管系統２１内をあらかじめ設定された圧力に加圧する。容器元弁１１ａを閉じて供給配管系統２１内をあらかじめ設定された時間加圧状態に保持した後、排気弁１９を開いて供給配管系統２１内の珪素水素化物ガスを排出する。   After the end of the inert gas purge, a process gas purge using silicon hydride gas in the gas container 11 is performed. In the process gas purge, the container main valve 11a of the gas container 11 is opened with the inert gas supply valve 17 and the exhaust valve 19 closed, and the silicon hydride gas in the gas container 11 is introduced into the supply piping system 21 and supplied. The inside of the piping system 21 is pressurized to a preset pressure. After the container main valve 11a is closed and the inside of the supply piping system 21 is kept in a pressurized state for a preset time, the exhaust valve 19 is opened and the silicon hydride gas in the supply piping system 21 is discharged.

プロセスガスパージ操作中、珪素水素化物ガスによる供給配管系統２１内の加圧を行っている際に、分析弁２２を開いて供給配管系統２１内の珪素水素化物ガスの一部を分析用ガスとして分析用配管２５に抜き出し、減圧弁２３にて分析器２４に対応した圧力に減圧した分析用ガスを分析器２４に導入する。分析器２４では、分析用配管２５から導入した分析用ガス中のシロキサン濃度を測定する。測定後は、分析弁２２を閉じて分析ガス排気弁２６を開き、分析用配管２５内の分析用ガスを排出し、さらに、排気弁１９を開いて供給配管系統２１内の珪素水素化物ガスを排出する。   During the process gas purge operation, when pressurizing the supply piping system 21 with silicon hydride gas, the analysis valve 22 is opened to analyze a part of the silicon hydride gas in the supply piping system 21 as an analysis gas. The gas for analysis, which has been extracted to the piping 25 and reduced to a pressure corresponding to the analyzer 24 by the pressure reducing valve 23, is introduced into the analyzer 24. The analyzer 24 measures the siloxane concentration in the analysis gas introduced from the analysis pipe 25. After the measurement, the analysis valve 22 is closed and the analysis gas exhaust valve 26 is opened, the analysis gas in the analysis pipe 25 is discharged, and further, the exhaust valve 19 is opened and the silicon hydride gas in the supply pipe system 21 is discharged. Discharge.

そして、分析器２４で測定したシロキサン濃度をあらかじめ設定された濃度と比較し、測定したシロキサン濃度があらかじめ設定された濃度を下回ったときに、通常は、分析器２４におけるシロキサン濃度の検出下限値を下回ったときに、パージ終了、珪素水素化物ガス供給可能と判断する。一方、測定したシロキサン濃度があらかじめ設定された濃度以上の場合には、パージ不完全、珪素水素化物ガス供給不可と判断し、供給配管系統２１内の珪素水素化物ガスを排出した後、前述のプロセスガスパージ及びシロキサン濃度の測定を繰り返す。   Then, the siloxane concentration measured by the analyzer 24 is compared with a preset concentration, and when the measured siloxane concentration falls below the preset concentration, usually, the detection lower limit value of the siloxane concentration in the analyzer 24 is set. When it falls below, it is judged that purging is completed and silicon hydride gas can be supplied. On the other hand, when the measured siloxane concentration is equal to or higher than a preset concentration, it is determined that the purge is incomplete and the silicon hydride gas cannot be supplied, and after the silicon hydride gas in the supply piping system 21 is discharged, the process described above is performed. Repeat the gas purge and siloxane concentration measurements.

珪素水素化物ガス供給可能と判断したら、排気弁１９を開いて供給配管系統２１内の珪素水素化物ガスを排出した後、排気弁１９を閉じてから容器元弁１１ａを開き、さらに、珪素水素化物ガス供給弁１５を開いてガス容器１１から珪素水素化物ガス使用装置への珪素水素化物ガスの供給を開始する。   If it is determined that the silicon hydride gas can be supplied, the exhaust valve 19 is opened and the silicon hydride gas in the supply piping system 21 is discharged. Then, the exhaust valve 19 is closed, and the container main valve 11a is opened. The gas supply valve 15 is opened, and supply of silicon hydride gas from the gas container 11 to the silicon hydride gas using device is started.

このように、プロセスガスパージを行っている際に、供給配管系統２１内を加圧している珪素水素化物ガスの一部を抜き出してシロキサン濃度を測定することにより、プロセスガスパージによるパージ操作によって供給配管系統２１内の大気成分のパージを十分に行ったか否かを確実に判定することができ、珪素水素化物ガス使用装置へ不純物を含まない珪素水素化物ガスを供給することができる。   In this way, when the process gas purge is performed, a part of the silicon hydride gas pressurized in the supply piping system 21 is extracted and the siloxane concentration is measured, so that the supply piping system is purged by the process gas purge. It is possible to reliably determine whether or not the atmospheric components in 21 have been sufficiently purged, and it is possible to supply silicon hydride gas containing no impurities to the silicon hydride gas using device.

さらに、分析用ガス中のシロキサン濃度の測定は、ガスクロマトグラフ質量分析計を使用して容易かつ確実に行うことができ、プロセスガスパージにおける加圧保持時間内で十分にシロキサン濃度を測定することが可能で、例えば、一般的な加圧保持時間の１０分程度で測定が可能である。なお、ガスクロマトグラフ質量分析計におけるシロキサン濃度、例えばジシロキサンの検出下限値は０．０１ｐｐｍである。   Furthermore, the measurement of the siloxane concentration in the analytical gas can be performed easily and reliably using a gas chromatograph mass spectrometer, and the siloxane concentration can be measured sufficiently within the pressurization holding time in the process gas purge. Thus, for example, the measurement can be performed in about 10 minutes of a general pressure holding time. In addition, the siloxane concentration in a gas chromatograph mass spectrometer, for example, the detection lower limit of disiloxane is 0.01 ppm.

１１…ガス容器、１１ａ…容器元弁、１２…ガス供給装置、１３…ガス容器接続用口金、１４…ガス容器接続用配管、１５…珪素水素化物ガス供給弁、１６…珪素水素化物ガス供給配管、１７…不活性ガス供給弁、１８…不活性ガス供給配管、１９…排気弁、２０…排気配管、２１…供給配管系統、２２…分析弁、２３…減圧弁、２４…分析器、２５…分析用配管、２６…分析ガス排気弁、２７…分析ガス排気配管、２８…ガス漏洩検知器、２９…ダンパー、３０…キャビネット   DESCRIPTION OF SYMBOLS 11 ... Gas container, 11a ... Container original valve, 12 ... Gas supply apparatus, 13 ... Gas container connection cap, 14 ... Gas container connection piping, 15 ... Silicon hydride gas supply valve, 16 ... Silicon hydride gas supply piping 17 ... Inert gas supply valve, 18 ... Inert gas supply pipe, 19 ... Exhaust valve, 20 ... Exhaust pipe, 21 ... Supply pipe system, 22 ... Analysis valve, 23 ... Pressure reducing valve, 24 ... Analyzer, 25 ... Analysis pipe, 26 ... analysis gas exhaust valve, 27 ... analysis gas exhaust pipe, 28 ... gas leak detector, 29 ... damper, 30 ... cabinet

Claims (4)

珪素水素化物ガス使用装置に供給する珪素水素化物ガス中の酸素含有化合物の濃度を測定し、測定した酸素含有化合物の濃度があらかじめ設定された濃度を下回ったときに珪素水素化物ガス使用装置への珪素水素化物ガスを開始することを特徴とする珪素水素化物ガスの供給方法。   The concentration of the oxygen-containing compound in the silicon hydride gas supplied to the silicon hydride gas using device is measured, and when the measured concentration of the oxygen-containing compound falls below a preset concentration, the silicon hydride gas using device is A method for supplying silicon hydride gas, comprising starting silicon hydride gas. 前記酸素含有化合物は、分子構造中にＳｉ−Ｏ−Ｓｉ結合を有するシロキサンであることを特徴とする請求項１記載の珪素水素化物ガスの供給方法。   The method for supplying silicon hydride gas according to claim 1, wherein the oxygen-containing compound is siloxane having a Si-O-Si bond in a molecular structure. ガス容器に充填した珪素水素化物ガスをガス供給装置を介して珪素水素化物ガス使用装置に供給する際に、前記ガス供給装置から前記珪素水素化物ガス使用装置に珪素水素化物ガス供給弁を閉じた状態で前記ガス供給装置に設けられているガス容器接続用口金に前記ガス容器を接続した後、前記珪素水素化物ガス供給弁と前記ガス容器接続用口金との間の配管に対して不活性ガスを用いた不活性ガスパージを行った後、前記ガス容器からガス容器接続用口金を介して珪素水素化物ガス供給弁とガス容器接続用口金との間の配管に珪素水素化物ガスを導入してプロセスガスパージを行うとともに、前記配管内のガスの一部を分析用ガスとして抜き出して分析器に導入し、該分析器で前記分析用ガスに含まれるシロキサンの濃度を測定し、測定したシロキサンの濃度があらかじめ設定された濃度を下回ったときに、前記プロセスガスパージを終了し、前記珪素水素化物ガス供給弁を開いて前記珪素水素化物ガス使用装置への珪素水素化物ガスの供給を開始することを特徴とする珪素水素化物ガスの供給方法。   The silicon hydride gas supply valve was closed from the gas supply device to the silicon hydride gas use device when supplying the silicon hydride gas filled in the gas container to the silicon hydride gas use device via the gas supply device. After connecting the gas container to a gas container connection base provided in the gas supply apparatus in an insulative state, an inert gas is connected to a pipe between the silicon hydride gas supply valve and the gas container connection base. After performing an inert gas purge using a gas, the silicon hydride gas is introduced from the gas container into a pipe between the silicon hydride gas supply valve and the gas container connection base through the gas container connection base. In addition to performing a gas purge, a part of the gas in the pipe is extracted as an analytical gas and introduced into the analyzer, and the analyzer measures the concentration of siloxane contained in the analytical gas. When the concentration of siloxane falls below a preset concentration, the process gas purge is terminated, and the supply of silicon hydride gas to the silicon hydride gas using device is started by opening the silicon hydride gas supply valve. A method for supplying a silicon hydride gas. 前記珪素水素化物ガスがモノシランであることを特徴とする請求項１乃至３のいずれか１項記載の珪素水素化物ガスの供給方法。   4. The silicon hydride gas supply method according to claim 1, wherein the silicon hydride gas is monosilane.
JP2011079157A 2011-03-31 2011-03-31 Monosilane gas supply method Active JP5690188B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011079157A JP5690188B2 (en) 2011-03-31 2011-03-31 Monosilane gas supply method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011079157A JP5690188B2 (en) 2011-03-31 2011-03-31 Monosilane gas supply method

Publications (2)

Publication Number Publication Date
JP2012214825A true JP2012214825A (en) 2012-11-08
JP5690188B2 JP5690188B2 (en) 2015-03-25

Family

ID=47267867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011079157A Active JP5690188B2 (en) 2011-03-31 2011-03-31 Monosilane gas supply method

Country Status (1)

Country Link
JP (1) JP5690188B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013061172A (en) * 2011-09-12 2013-04-04 Taiyo Nippon Sanso Corp Concentration analytical method for impurity in silicon compound gas

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000306839A (en) * 1999-04-23 2000-11-02 Nippon Sanso Corp Feeding system for semiconductor process gas
JP2002071093A (en) * 2000-08-31 2002-03-08 Nippon Sanso Corp Method for feeding semiconductor process gas
JP2003240669A (en) * 2002-02-21 2003-08-27 Nippon Sanso Corp Gas supply facility, leakage test method, and gas supply method
JP2006215035A (en) * 2005-02-03 2006-08-17 Air Products & Chemicals Inc System and method for measuring and/or analysis of particle in gas stream
JP2007218843A (en) * 2006-02-20 2007-08-30 Hitachi High-Tech Science Systems Corp Detector for detecting sample of low ionization energy, and analysis apparatus
JP2009228887A (en) * 2008-03-25 2009-10-08 Air Liquide Japan Ltd Gas supply system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000306839A (en) * 1999-04-23 2000-11-02 Nippon Sanso Corp Feeding system for semiconductor process gas
JP2002071093A (en) * 2000-08-31 2002-03-08 Nippon Sanso Corp Method for feeding semiconductor process gas
JP2003240669A (en) * 2002-02-21 2003-08-27 Nippon Sanso Corp Gas supply facility, leakage test method, and gas supply method
JP2006215035A (en) * 2005-02-03 2006-08-17 Air Products & Chemicals Inc System and method for measuring and/or analysis of particle in gas stream
JP2007218843A (en) * 2006-02-20 2007-08-30 Hitachi High-Tech Science Systems Corp Detector for detecting sample of low ionization energy, and analysis apparatus
JP2009228887A (en) * 2008-03-25 2009-10-08 Air Liquide Japan Ltd Gas supply system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013061172A (en) * 2011-09-12 2013-04-04 Taiyo Nippon Sanso Corp Concentration analytical method for impurity in silicon compound gas

Also Published As

Publication number Publication date
JP5690188B2 (en) 2015-03-25

Similar Documents

Publication Publication Date Title
US10593523B2 (en) Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) Systems and methods for internal surface conditioning assessment in plasma processing equipment
KR100253089B1 (en) Chemical vapor deposition apparatus
KR101367575B1 (en) System for producing primary standard gas mixtures
US8393197B2 (en) Method and apparatus for the measurement of atmospheric leaks in the presence of chamber outgassing
CN108352345B (en) Method and system for measuring contaminants of transport containers for atmospheric transport and storage of substrates
US8932954B2 (en) Impurity analysis device and method
US9518904B2 (en) System and method of quantifying impurities mixed within a sample of hydrogen gas
JP2000120992A (en) Gas charging method to gas cylinder and gas charging device
JP5690188B2 (en) Monosilane gas supply method
WO2011001394A2 (en) Method of removing residual fluorine from deposition chamber
KR20170095734A (en) Film forming apparatus, film forming method, program, and computer-readable storage medium
JP3326559B2 (en) CVD apparatus and its purging method
JP2004157035A (en) Gas permeation speed measuring device of barrier film-coated plastic container, gas permeation speed measuring method of barrier film-coated plastic container, gas permeation speed measuring device of barrier film-coated plastic sheet, and gas pearmeation speed measuring method of barrier film-coated plastic sheet
US10053362B2 (en) Gas-loading and packaging method and apparatus
JP2021094528A (en) Refined gas supply method, refined diborane and refined gas supply device
JP6142152B2 (en) Oil content measuring apparatus and oil content measuring method
JP2005326219A (en) Analysis sample preparing apparatus, analysis sample preparing method and semiconductor sample analysis method
JP6062191B2 (en) Sampling method of sample gas
CN219957092U (en) Alkali liquor absorption sample preparation device, detection sample preparation device and detection system
US6684721B2 (en) Method and apparatus for preparing a liquid sample
JP7490551B2 (en) Airtightness test method
WO2022064814A1 (en) Semiconductor device manufacturing method, anomaly indication detection method, anomaly indication detection program, and substrate processing device
JP2020070838A (en) High-purity raw material gas supply method, and high-purity raw material gas supply facility
Barth et al. Managing fab UHP N 2 by measuring trace moisture

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140416

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140527

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140710

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150127

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150130

R150 Certificate of patent or registration of utility model

Ref document number: 5690188

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250