JP2012208296A - Method for manufacturing electro-optic device, electro-optic device, projection-type display device, and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an electro-optic device that is capable of appropriately controlling the thickness of a pixel electrode when unevenness resulting from the presence of the pixel electrode is reduced by an insulating film provided in a region between pixels, and to provide an electro-optic device manufactured by the above method, a projection-type display device including the above electro-optic device, and electronic equipment.SOLUTION: In forming a pixel electrode 9a on an element substrate of a liquid crystal device, a first insulating film 47 including a lattice-shaped convex part 47f extending along an inter-pixel region 10f is formed, then, a contact hole 47a is formed in the first insulating film 47, and thereafter, a conductive film 9 and a second insulating film 49 are sequentially stacked. Next, in a polishing step, the convex part 47f is polished to be exposed, and the second insulating film 49 and the conductive film 9 are divided by the convex part 47f (inter-pixel region 10f).

Description

  The present invention relates to a method for manufacturing a liquid crystal device in which a plurality of pixel electrodes are formed on an element substrate, a liquid crystal device manufactured by such a method, and a projection display device including the liquid crystal device.

  In an electro-optical device such as a liquid crystal device, a plurality of pixel electrodes are arranged in a matrix on an element substrate (see Patent Document 1). Among such electro-optical devices, for example, in a liquid crystal device, as shown in FIG. 8A, when irregularities due to the pixel electrode 9a are generated on the surface of the element substrate 10, an organic material system such as a polyimide film is used. There is a problem that the rubbing treatment for the alignment film 16 cannot be performed uniformly. Further, when unevenness due to the pixel electrode 9a occurs when the inorganic material-based alignment film 16 is formed by oblique vapor deposition such as a silicon oxide film, an inter-pixel region sandwiched between adjacent pixel electrodes 9a. The oblique deposition cannot be suitably performed for 10f, and there is a problem that the alignment ability of the alignment film 16 varies.

  On the other hand, as shown in FIG. 8B, if the inter-pixel region 10f sandwiched between the adjacent pixel electrodes 9a is filled with an insulating film 90, the alignment film 16 can be formed on a flat surface. The above problems can be solved. In general, such planarization is performed by forming an insulating film 90 on the surface side of the pixel electrode 9a as shown in FIG. 8C and then exposing the surface of the pixel electrode 9a as shown in FIG. 8D. This can be realized by polishing until the insulating film 90 is left in the inter-pixel region 10f.

JP 2010-96966 A

  However, in the method described with reference to FIGS. 8B to 8D, it is inevitable that the surface of the pixel electrode 9a is polished at the time of polishing, and therefore the thickness of the pixel electrode 9a varies. There is a problem. As a result, in the transmissive liquid crystal device, there arises a problem that the spectral characteristics of the translucent conductive film constituting the pixel electrode 9a are fluctuated and the image quality is deteriorated. In addition, an image formed by a reflective liquid crystal device is easily affected by the thickness of the liquid crystal layer, and as a result, the thickness of the reflective conductive film constituting the pixel electrode 9a varies. If it fluctuates, there arises a problem that the quality of the image is lowered.

  In view of the above problems, an object of the present invention is to provide an electro-optic that can appropriately control the thickness of the pixel electrode even when the unevenness caused by the pixel electrode is alleviated by the insulating film provided in the inter-pixel region. An object of the present invention is to provide a device manufacturing method, an electro-optical device, a projection display device, and an electronic apparatus.

  In order to solve the above-described problem, a method for manufacturing an electro-optical device according to the present invention includes a first insulating film forming step of forming a first insulating film having at least a lattice-shaped convex portion on one surface side of a substrate. A contact hole forming step of forming a contact hole penetrating the first insulating film, and a conductive film forming step of forming a conductive film constituting a pixel electrode on the opposite side of the substrate from the first insulating film A second insulating film forming step of forming a second insulating film on the opposite side of the first insulating film with respect to the conductive film; and the protrusions exposing the conductive film and the second insulating film And polishing to form the pixel electrode by dividing the conductive film by the protrusions.

  In the present invention, after forming the first insulating film having the protrusions extending in a lattice shape along the inter-pixel region, a contact hole is formed in the first insulating film, and then the conductive film and the second insulating film Are sequentially stacked. Next, in the polishing step, polishing is performed until the convex portions are exposed, and the second insulating film and the conductive film are divided by the convex portions (inter-pixel regions). As a result, a pixel electrode is formed by the divided conductive film, and a convex portion of the first insulating film remains between the pixel electrodes (inter-pixel region). Accordingly, the unevenness caused by the pixel electrode is alleviated by the convex portion of the first insulating film. According to the present invention, since the second insulating film remains on the surface of the pixel electrode in the contact hole, unevenness caused by the contact hole is alleviated by the second insulating film in the contact hole. Furthermore, in the present invention, since the second insulating film is formed on the surface of the conductive film, the surface of the conductive film is not polished. Therefore, the thickness of the pixel electrode is not changed by polishing, but is controlled by the thickness when the conductive film is formed. Therefore, for example, in a transmissive liquid crystal device, the spectral characteristics of the light-transmitting conductive film constituting the pixel electrode do not vary, so that it is possible to prevent image quality degradation due to the variation in spectral characteristics. In the reflective liquid crystal device, since the thickness of the reflective conductive film constituting the pixel electrode does not vary, it is possible to prevent deterioration in image quality due to the variation in the thickness of the liquid crystal layer.

  The electro-optical device manufactured by the method according to the present invention includes a substrate, a plurality of pixel electrodes provided on one side of the substrate, and the plurality of pixel electrodes and the substrate. Among the pixel electrodes, a first insulating film formed with a protrusion extending in an inter-pixel region sandwiched between adjacent pixel electrodes, and a contact hole, and the pixel electrode in the contact hole with respect to the pixel electrode And a second insulating film overlapping on the opposite side of the substrate.

  In the method for manufacturing a liquid crystal device according to the present invention, after the polishing step, a conductive film etching step of etching the conductive film exposed between the second insulating film and the convex portion, and the convex portion and the conductive portion. It is preferable to perform an insulating film etching step of etching the first insulating film and the second insulating film until a flat surface is formed with the film. In the liquid crystal device manufactured by such a method, the height dimension of the convex portion is the same as the thickness dimension of the pixel electrode. Therefore, the space between the pixel electrodes (inter-pixel region) is completely planarized by the convex portion of the first insulating film.

  In the present invention, the second insulating film is preferably silicate glass doped with at least one of phosphorus and boron. Since such a silicate glass has a high polishing rate, there is an advantage that a margin with respect to the thickness of the second insulating film is large.

  A liquid crystal device to which the present invention is applied can be used for various electronic devices such as a direct-view display device and a projection display device. Among such electronic devices, the projection display device includes: a light source unit that emits illumination light applied to the electro-optical device to which the present invention is applied; and a projection optical system that projects light modulated by the liquid crystal device. Have.

It is a block diagram which shows the electrical constitution of the liquid crystal device (liquid crystal device) to which this invention is applied. It is explanatory drawing of the liquid crystal panel used for the liquid crystal device to which this invention is applied. It is explanatory drawing of the pixel of the liquid crystal device to which this invention is applied. It is explanatory drawing which expands and shows the cross-sectional structure of the pixel electrode periphery in the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the principal part of the manufacturing process of the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the principal part of the manufacturing process of the liquid crystal device to which this invention is applied. It is a schematic block diagram of the projection type display apparatus using the liquid crystal device to which this invention is applied. It is explanatory drawing which shows the conventional problem.

  Embodiments of the present invention will be described with reference to the drawings. In the following description, the case where the present invention is applied to a liquid crystal device and a manufacturing method thereof among various electro-optical devices will be mainly described. In the drawings referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. Further, in order to easily understand the correspondence with the configuration described with reference to FIG. 8, the corresponding portions will be described with the same reference numerals. In addition, when the direction of the current flowing through the pixel transistor is reversed, the source and the drain are switched. In this description, the side to which the pixel electrode is connected (pixel side source / drain region) is the drain, and the data line is connected. The source side (data line side source / drain region) is the source. Further, when describing the layers formed on the element substrate, the upper layer side or the surface side means the side opposite to the side where the substrate body of the element substrate is located (the side on which the counter substrate is located), and the lower layer side means It means the side where the substrate body of the element substrate is located.

[Description of liquid crystal device]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of a liquid crystal device to which the present invention is applied. Note that FIG. 1 is a block diagram showing the electrical configuration to the last, and therefore the layout, such as the direction in which the capacitor lines extend, is schematically shown.

  In FIG. 1, a liquid crystal device 100 of this embodiment includes a liquid crystal panel 100p in a TN (Twisted Nematic) mode or a VA (Vertical Alignment) mode, and the liquid crystal panel 100p has a plurality of pixels 100a in a matrix in a matrix area. Image display area 10a (pixel area) arranged in a shape. In the liquid crystal panel 100p, in the element substrate 10 (see FIG. 2 and the like) to be described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the image display region 10a. A pixel 100a is configured at a corresponding position. In each of the plurality of pixels 100a, a pixel transistor 30 made of a field effect transistor and a pixel electrode 9a described later are formed. The data line 6 a is electrically connected to the source of the pixel transistor 30, the scanning line 3 a is electrically connected to the gate of the pixel transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the pixel transistor 30. Has been.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are provided on the outer peripheral side of the image display region 10 a. The data line driving circuit 101 is electrically connected to each data line 6a, and sequentially supplies the image signal supplied from the image processing circuit to each data line 6a. The scanning line driving circuit 104 is electrically connected to each scanning line 3a, and sequentially supplies a scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate 20 (see FIG. 2 and the like), which will be described later, via a liquid crystal layer, and constitutes a liquid crystal capacitor 50a. Further, a storage capacitor 55 is added to each pixel 100a in parallel with the liquid crystal capacitor 50a in order to prevent fluctuation of the image signal held in the liquid crystal capacitor 50a. In this embodiment, in order to form the storage capacitor 55, the first electrode layer 5a straddling the plurality of pixels 100a is formed as a capacitor electrode layer. In this embodiment, the first electrode layer 5a is electrically connected to the common potential line 5c to which the common potential Vcom is applied.

(Configuration of the liquid crystal panel 100p)
FIG. 2 is an explanatory diagram of a liquid crystal panel 100p used in the liquid crystal device 100 to which the present invention is applied. FIGS. 2A and 2B show the liquid crystal panel 100p together with the respective components from the counter substrate side. FIG. 6 is a plan view and a sectional view taken along the line HH ′.

  As shown in FIGS. 2A and 2B, in the liquid crystal panel 100p, the element substrate 10 and the counter substrate 20 are bonded to each other with a seal material 107 through a predetermined gap. It is provided in the shape of a frame along the outer edge. The sealing material 107 is an adhesive made of a photo-curing resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between both substrates to a predetermined value.

  In the liquid crystal panel 100p having such a configuration, the element substrate 10 and the counter substrate 20 are both square, and the image display area 10a described with reference to FIG. 1 is provided as a square area in the approximate center of the liquid crystal panel 100p. ing. Corresponding to this shape, the sealing material 107 is also provided in a substantially rectangular shape, and a substantially rectangular peripheral region 10b is provided in a frame shape between the inner peripheral edge of the sealing material 107 and the outer peripheral edge of the image display region 10a. Yes. In the element substrate 10, a data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10 outside the image display region 10 a, and scanning lines are formed along other sides adjacent to the one side. A drive circuit 104 is formed. Note that a flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the element substrate 10 through the flexible wiring board.

  As will be described in detail later, on the one surface 10s side of the one surface 10s and the other surface 10t of the element substrate 10, the pixel transistor 30 and the pixel transistor 30 described with reference to FIG. The pixel electrodes 9a to be connected are formed in a matrix, and an alignment film 16 is formed on the upper layer side of the pixel electrodes 9a.

  Further, on the one surface 10s side of the element substrate 10, a dummy pixel electrode 9b (see FIG. 2B) formed simultaneously with the pixel electrode 9a is formed in the peripheral region 10b. For the dummy pixel electrode 9b, a configuration in which the dummy pixel transistor is electrically connected, a configuration in which the dummy pixel transistor is not provided, and a configuration in which the dummy pixel electrode is directly electrically connected to the wiring, or a floating state in which no potential is applied The structure which exists in is adopted. The dummy pixel electrode 9b compresses the height positions of the image display region 10a and the peripheral region 10b when the surface on which the alignment film 16 is formed in the element substrate 10 is flattened by polishing, and the alignment film 16 is formed. This contributes to a flat surface. Further, if the dummy pixel electrode 9b is set to a predetermined potential, it is possible to prevent the disorder of the alignment of the liquid crystal molecules at the outer peripheral side end of the image display region 10a.

  A common electrode 21 is formed on one side of the counter substrate 20 facing the element substrate 10, and an alignment film 26 is formed on the common electrode 21. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the counter substrate 20 or a plurality of strip electrodes. Further, a light shielding layer 108 is formed on the lower layer side of the common electrode 21 on one surface side of the counter substrate 20 facing the element substrate 10. In this embodiment, the light shielding layer 108 is formed in a frame shape extending along the outer peripheral edge of the image display region 10a, and functions as a parting. Here, the outer peripheral edge of the light shielding layer 108 is located with a gap between the inner peripheral edge of the sealing material 107 and the light shielding layer 108 and the sealing material 107 do not overlap. In the counter substrate 20, the light shielding layer 108 may be formed as a black matrix portion in an area that overlaps an inter-pixel area sandwiched between adjacent pixel electrodes 9 a.

  In the liquid crystal panel 100p configured as described above, the element substrate 10 is electrically connected between the element substrate 10 and the counter substrate 20 in a region overlapping the corner portion of the counter substrate 20 outside the sealant 107. The inter-substrate conduction electrode 109 is formed. The inter-substrate conducting material 109 a containing conductive particles is disposed on the inter-substrate conducting electrode 109, and the common electrode 21 of the counter substrate 20 is interposed via the inter-substrate conducting material 109 a and the inter-substrate conducting electrode 109. Are electrically connected to the element substrate 10 side. Therefore, the common potential Vcom is applied to the common electrode 21 from the element substrate 10 side. The sealing material 107 is provided along the outer peripheral edge of the counter substrate 20 with substantially the same width dimension. For this reason, the sealing material 107 is substantially rectangular. However, the sealing material 107 is provided so as to pass inside avoiding the inter-substrate conduction electrode 109 in a region overlapping the corner portion of the counter substrate 20, and the corner portion of the sealing material 107 has a substantially arc shape.

  In the liquid crystal device 100 having such a configuration, when the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film such as ITO or IZO, a transmissive liquid crystal device can be configured. On the other hand, when the common electrode 21 is formed of a light-transmitting conductive film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) and the pixel electrode 9a is formed of a reflective conductive film such as aluminum, a reflective type is obtained. The liquid crystal device can be configured. When the liquid crystal device 100 is of a reflective type, light incident from the counter substrate 20 side is modulated while being reflected by the substrate on the element substrate 10 side and emitted, thereby displaying an image. In the case where the liquid crystal device 100 is a transmissive type, the light incident from one of the element substrate 10 and the counter substrate 20 is modulated while being transmitted through the other substrate, and an image is displayed.

  The liquid crystal device 100 can be used as a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) and a protective film are formed on the counter substrate 20. In the liquid crystal device 100, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction with respect to the liquid crystal panel 100p according to the type of the liquid crystal layer 50 to be used and the normally white mode / normally black mode. The Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device used as a RGB light valve in a projection display device described later, and light incident from the counter substrate 20 is transmitted through the element substrate 10 and emitted. The case will be mainly described. Further, in this embodiment, the liquid crystal device 100 will be described focusing on the case where the liquid crystal layer 50 includes a VA mode liquid crystal panel 100p using a nematic liquid crystal compound having a negative dielectric anisotropy.

(Specific pixel configuration)
3A and 3B are explanatory diagrams of pixels of the liquid crystal device 100 to which the present invention is applied. FIGS. 3A and 3B are a plan view of adjacent pixels in the element substrate 10 and FIG. It is sectional drawing when the liquid crystal device 100 is cut | disconnected in the position corresponded to FF 'line. In FIG. 3A, each region is represented by the following line.
Scanning line 3a = thick solid line Semiconductor layer 1a = thin and short dotted line Data line 6a and drain electrode 6b = dot and dash line First electrode layer 5a and relay electrode 5b = thin and long broken line Second electrode layer 7a = two-dot chain line Pixel electrode 9a = Thick and short dashed line

  As shown in FIG. 3A, a rectangular pixel electrode 9a is formed on each of the plurality of pixels 100a on the element substrate 10, and a vertical and horizontal inter-pixel region 10f sandwiched between adjacent pixel electrodes 9a. A data line 6a and a scanning line 3a are formed along the overlapping area. More specifically, in the inter-pixel region 10f, the scanning line 3a extends along the region overlapping the first inter-pixel region 10g extending along the scanning line 3a, and extends along the data line 6a. A data line 6a extends along a region overlapping the second inter-pixel region 10h. Each of the data line 6a and the scanning line 3a extends linearly, and a pixel transistor 30 is formed in a region where the data line 6a and the scanning line 3a intersect. On the element substrate 10, the first electrode layer 5a (capacitance electrode layer) described with reference to FIG. 1 is formed so as to overlap the data line 6a.

  As shown in FIGS. 3A and 3B, the element substrate 10 includes a translucent substrate body 10w such as a quartz substrate and a glass substrate, and a surface of the substrate body 10w on the liquid crystal layer 50 side (on the one surface 10s side). The pixel electrode 9a, the pixel transistor 30 for pixel switching, and the alignment film 16 are mainly formed. The counter substrate 20 includes a translucent substrate main body 20w such as a quartz substrate or a glass substrate, a common electrode 21 formed on a surface of the liquid crystal layer 50 side (one surface facing the element substrate 10), and an alignment film 26. Is the main constituent.

  In the element substrate 10, a scanning line 3 a made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound is formed on one surface side of the substrate body 10 w. In this embodiment, the scanning line 3 a is made of a light-shielding conductive film such as tungsten silicide (WSi), and also functions as a light-shielding film for the pixel transistor 30. In this embodiment, the scanning line 3a is made of tungsten silicide having a thickness of about 200 nm. An insulating film such as a silicon oxide film may be provided between the substrate body 10w and the scanning line 3a.

An insulating film 12 such as a silicon oxide film is formed on the upper side of the scanning line 3a on the one surface 10s side of the substrate body 10w, and the pixel transistor 30 including the semiconductor layer 1a on the surface of the insulating film 12 is formed. Is formed. In this embodiment, the insulating film 12 is formed by, for example, a silicon oxide formed by a low pressure CVD method using tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ) or a plasma CVD method using tetraethoxysilane and oxygen gas. It has a two-layer structure of a film and a silicon oxide film (HTO (High Temperature Oxide) film) formed by a high temperature CVD method.

  The pixel transistor 30 extends in a direction perpendicular to the length direction of the semiconductor layer 1a, and a semiconductor layer 1a having a long side direction in the extending direction of the scan line 3a in the intersection region of the scan line 3a and the data line 6a. The gate electrode 3c is provided so as to overlap the central portion in the length direction of the semiconductor layer 1a. Further, the pixel transistor 30 has a light-transmitting gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3c. The semiconductor layer 1a includes a channel region 1g opposed to the gate electrode 3c via the gate insulating layer 2, and includes a source region 1b and a drain region 1c on both sides of the channel region 1g. In this embodiment, the pixel transistor 30 has an LDD structure. Accordingly, each of the source region 1b and the drain region 1c includes the low concentration regions 1b1, 1c1 on both sides of the channel region 1g, and the high concentration in the region adjacent to the low concentration regions 1b1, 1c1 opposite to the channel region 1g. Regions 1b2 and 1c2 are provided.

  The semiconductor layer 1a is composed of a polycrystalline silicon film or the like. The gate insulating layer 2 has a two-layer structure of a first gate insulating layer 2a made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a second gate insulating layer 2b made of a silicon oxide film or the like formed by a CVD method or the like. Consists of. The gate electrode 3c is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound, and contacts that penetrate the second gate insulating layer 2b and the insulating film 12 on both sides of the semiconductor layer 1a. It is electrically connected to the scanning line 3a through the holes 12a and 12b. In this embodiment, the gate electrode 3c has a two-layer structure of a conductive polysilicon film having a thickness of about 100 nm and a tungsten silicide film having a thickness of about 100 nm.

  In this embodiment, when the light after passing through the liquid crystal device 100 is reflected by another member, the reflected light is incident on the semiconductor layer 1a and the pixel transistor 30 malfunctions due to the photocurrent. For the purpose of prevention, the scanning line 3a is formed of a light shielding film. However, the scanning line may be formed in the upper layer of the gate insulating layer 2 and a part thereof may be used as the gate electrode 3c. In this case, the scanning line 3a shown in FIG. 3 is formed only for light shielding.

A translucent interlayer insulating film 41 made of a silicon oxide film or the like is formed on the upper layer side of the gate electrode 3c. On the upper layer of the interlayer insulating film 41, the data line 6a and the drain electrode 6b are made of the same conductive film. Is formed. The interlayer insulating film 41 is made of, for example, a silicon oxide film formed by a plasma CVD method using silane gas (SH ₄ ) and nitrous oxide (N ₂ O).

  The data line 6a and the drain electrode 6b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the data line 6a and the drain electrode 6b are formed of a titanium (Ti) film having a thickness of 20 nm, a titanium nitride (TiN) film having a thickness of 50 nm, an aluminum (Al) film having a thickness of 350 nm, and a film thickness. It has a four-layer structure in which 150 nm TiN films are stacked in this order. The data line 6a is electrically connected to the source region 1b (data line side source / drain region) through a contact hole 41a penetrating the interlayer insulating film 41 and the second gate insulating layer 2b. The drain electrode 6b is formed so as to partially overlap the drain region 1c (pixel electrode side source / drain region) of the semiconductor layer 1a in a region overlapping the first inter-pixel region 10g. It is electrically connected to the drain region 1c through a contact hole 41b that penetrates the gate insulating layer 2b.

  A translucent interlayer insulating film 42 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the drain electrode 6b. The interlayer insulating film 42 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas.

  On the upper layer side of the interlayer insulating film 42, the first electrode layer 5a and the relay electrode 5b are formed of the same conductive film. The first electrode layer 5a and the relay electrode 5b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the first electrode layer 5a and the relay electrode 5b have a two-layer structure of an Al film having a thickness of about 200 nm and a TiN film having a thickness of about 100 nm. Similar to the data line 6a, the first electrode layer 5a extends along a region overlapping the second inter-pixel region 10h. The relay electrode 5b is formed so as to partially overlap the drain electrode 6b in a region overlapping the first inter-pixel region 10g, and is electrically connected to the drain electrode 6b through a contact hole 42a penetrating the interlayer insulating film 42. ing.

  An interlayer insulating film 44 such as a silicon oxide film is formed as an etching stopper layer on the upper side of the first electrode layer 5a and the relay electrode 5b, and the interlayer insulating film 44 is formed in a region overlapping the first electrode layer 5a. An opening 44b is formed. In this embodiment, the interlayer insulating film 44 is made of a silicon oxide film or the like formed by a plasma CVD method using tetraethoxysilane and oxygen gas. Here, although not shown in FIG. 3A, the opening 44b is a portion extending along a region overlapping with the first inter-pixel region 10g starting from the intersection region between the data line 6a and the scanning line 3a. And a portion extending along a region overlapping the second inter-pixel region 10h starting from the intersection region of the data line 6a and the scanning line 3a.

  A translucent dielectric layer 40 is formed on the upper layer side of the interlayer insulating film 44, and a second electrode layer 7 a is formed on the upper layer side of the dielectric layer 40. The second electrode layer 7a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal film compound. In this embodiment, the second electrode layer 7a is made of a TiN film having a thickness of about 100 nm. As the dielectric layer 40, a silicon compound such as a silicon oxide film or a silicon nitride film can be used, and an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, zirconium A dielectric layer having a high dielectric constant such as an oxide film can be used. The second electrode layer 7a includes a portion extending along a region overlapping the first inter-pixel region 10g starting from an intersection region between the data line 6a and the scanning line 3a, and an intersection region between the data line 6a and the scanning line 3a. And a portion extending along a region overlapping with the second inter-pixel region 10h. Therefore, a portion of the second electrode layer 7 a that extends along the region overlapping with the second inter-pixel region 10 h is the first electrode layer 5 a via the dielectric layer 40 in the opening 44 b of the interlayer insulating film 44. It overlaps with. In this way, in the present embodiment, the first electrode layer 5a, the dielectric layer 40, and the second electrode layer 7a constitute the storage capacitor 55 in a region overlapping the first inter-pixel region 10g.

  In the second electrode layer 7a, the portion extending along the region overlapping the first inter-pixel region 10g partially overlaps the relay electrode 5b and penetrates the dielectric layer 40 and the interlayer insulating film 44. It is electrically connected to the relay electrode 5b through the contact hole 44a.

A translucent interlayer insulating film 45 is formed on the upper layer side of the second electrode layer 7a. In this embodiment, the upper layer side of the interlayer insulating film 45 is a second layer which will be described later with reference to FIGS. One insulating film 47 is formed. The interlayer insulating film 45 is made of, for example, a silicon oxide film formed by a plasma CVD method using silane gas and nitrous oxide (N ₂ O).

  On the upper layer side of the first insulating film 47, a pixel electrode 9a made of a light-transmitting conductive film such as an ITO film having a thickness of about 140 nm is formed. The pixel electrode 9a partially overlaps the second electrode layer 7a in the vicinity of the intersection region between the data line 6a and the scanning line 3a, and through the contact hole 47a penetrating the first insulating film 47 and the interlayer insulating film 45. Are electrically connected to the second electrode layer 7a. Further, in the contact hole 47a, a second insulating film 49 described later with reference to FIGS. 4 to 6 is formed on the surface of the pixel electrode 9a.

An alignment film 16 is formed on the surface of the pixel electrode 9a. The alignment film 16 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 16 is an obliquely deposited film of SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O ₅ or the like. An inorganic alignment film (vertical alignment film).

The counter substrate 20 is made of a light-transmitting conductive film such as an ITO film on the surface of the light-transmitting substrate body 20 w such as a quartz substrate or a glass substrate on the liquid crystal layer 50 side (surface facing the element substrate 10). A common electrode 21 is formed, and an alignment film 26 is formed so as to cover the common electrode 21. Similar to the alignment film 16, the alignment film 26 is made of a resin film such as polyimide or an oblique deposition film such as a silicon oxide film. In this embodiment, the alignment film 26 is an obliquely deposited film such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O _5. An inorganic alignment film (vertical alignment film). The alignment films 16 and 26 vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the liquid crystal layer 50, and the liquid crystal panel 100p operates as a normally black VA mode.

  Note that the data line driving circuit 101 and the scanning line driving circuit 104 described with reference to FIGS. 1 and 2 are complementary transistor circuits each including an n-channel driving transistor and a p-channel driving transistor. Etc. are configured. Here, the driving transistor is formed by utilizing a part of the manufacturing process of the pixel transistor 30. Therefore, the region where the data line driving circuit 101 and the scanning line driving circuit 104 are formed in the element substrate 10 also has a cross-sectional configuration substantially similar to the cross-sectional configuration shown in FIG.

(Detailed configuration around the pixel electrode 9a)
FIG. 4 is an explanatory diagram showing an enlarged cross-sectional configuration around the pixel electrode 9a in the liquid crystal device 100 to which the present invention is applied.

  As shown in FIG. 4, in the liquid crystal device 100 of the present embodiment, a translucent interlayer insulating film 45 is formed on the upper layer side of the second electrode layer 7a, and on the upper layer side of the interlayer insulating film 45, A translucent first insulating film 47 is formed. A pixel electrode 9 a is formed on the upper layer side of the first insulating film 47, and the pixel electrode 9 a is connected to the second electrode layer 7 a through a contact hole 47 a that penetrates the first insulating film 47 and the interlayer insulating film 45. Conducted. The surface of the interlayer insulating film 45 is a flat surface by a method such as chemical mechanical polishing, and the first insulating film 47 is formed on the flat surface. Further, the pixel electrode 9 a is formed on the surface of the flat portion 47 e of the first insulating film 47. More specifically, in the first insulating film 47, the portion where the pixel electrode 9a is located is a recess 47g, and the portion of the bottom of the recess 47g that overlaps the pixel electrode 9a on the lower layer side is a flat portion 47e. ing. For this reason, the surface of the pixel electrode 9a is a flat surface.

  Further, in the first insulating film 47, a portion sandwiched between the concave portions 47g (flat portion 47e) is a convex portion 47f having a width dimension of about 0.5 μm. Here, the convex portion 47f extends continuously in the inter-pixel region 10f sandwiched between the adjacent pixel electrodes 9a, and fills the concave portion (inter-pixel region 10f) sandwiched between the pixel electrodes 9a. . The height dimension of the convex portion 47f is the same as the thickness of the pixel electrode 9a and is about 140 nm. For this reason, the surface of the pixel electrode 9a and the upper end surface of the convex portion 47f constitute a continuous flat surface.

  Further, in the contact hole 47a, a second insulating film 49 is formed on the surface side of the pixel electrode 9a, and a recess caused by the contact hole 47a is filled in the surface of the pixel electrode 9a.

  Thus, in this embodiment, the pixel electrode 9a is formed on the flat portion 47e of the first insulating film 47, and the surface of the pixel electrode 9a is a flat surface. Further, the concave portion (inter-pixel region 10f) sandwiched between the pixel electrodes 9a is filled with the convex portion 47f of the first insulating film 47, and the surface of the pixel electrode 9a and the upper end surface of the convex portion 47f are continuous flat surfaces. Is configured. Further, the unevenness caused by the contact hole 47 a on the surface of the pixel electrode 9 a is relaxed by the second insulating film 49. Therefore, in this embodiment, when forming the alignment film 16 from an inorganic material, oblique vapor deposition is performed on a continuous flat surface, and therefore the alignment film 16 can be preferably formed. Moreover, when the alignment film 16 is formed from an organic material such as polyimide, the surface of the alignment film 16 is a continuous flat surface, so that the rubbing process can be performed appropriately. Therefore, the liquid crystal layer 50 can be suitably aligned.

(Manufacturing method of the liquid crystal device 100)
5 and 6 are explanatory views showing the main part of the manufacturing process of the liquid crystal device 100 to which the present invention is applied. In addition, although the process demonstrated below is performed in the state of the large sized substrate which can take many element substrates 10, in the following description, it demonstrates as the element substrate 10 irrespective of size.

  Of the manufacturing steps of the liquid crystal device 100 of the present embodiment, in the step of forming the element substrate 10, as shown in FIG. 5A, up to the interlayer insulating film 45 is formed by a known method, and then the interlayer insulating film 45. The surface of is polished and flattened.

  Next, in the first insulating film step shown in FIGS. 5A and 5B, a first insulating film provided with a protrusion 47f extending along the inter-pixel region 10f sandwiched between adjacent pixel electrodes 9a. 47 (see FIG. 4) is formed. More specifically, as shown in FIG. 5A, after an insulating film 47w such as a silicon oxide film is formed on the interlayer insulating film 45, a resist mask 470 is formed in a region overlapping the inter-pixel region 10f. . In this embodiment, the insulating film 47w is formed to a thickness of about 500 nm. In this embodiment, as the insulating film 47w, for example, a non-doped silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas or the like is formed.

  Next, with the resist mask 470 formed on the surface of the insulating film 47w, the insulating film 47w is etched, and then the resist mask 470 is removed. As a result, a concave portion 47g is formed in a region where the region (pixel electrode 9a) surrounded by the inter-pixel region 10f is formed, and as a result, the first insulating film 47 including the lattice-shaped convex portion 47f is formed. The In the present embodiment, the height of the protrusion 47f is about 400 nm, and the width is about 0.5 μm.

  Next, in the contact hole forming step, a resist mask (not shown) is formed on the surface of the first insulating film 47. In this state, the first insulating film 47 is etched, and then the resist mask is removed. As shown in FIG. 3C, a contact hole 47a penetrating the first insulating film 47 and the interlayer insulating film 46 is formed.

  Next, in the conductive film forming step shown in FIG. 5D, a light-transmitting conductive film 9 such as an ITO film is formed by sputtering or the like as the conductive film 9 constituting the pixel electrode 9a. As a result, the conductive film 9 is electrically connected to the second electrode layer 7a at the bottom of the contact hole 47a. The thickness of the conductive film 9 is, for example, about 140 nm.

Next, in the second insulating film step shown in FIG. 6A, a second insulating film 49 made of an insulating film such as a silicon oxide film is formed on the surface side of the conductive film 9. The thickness of the second insulating film 49 is larger than the thickness of the conductive film 9, and is about 150 nm, for example. The second insulating film 49 is, for example, silicate glass doped with at least one of phosphorus and boron, and such silicate glass can be formed by an atmospheric pressure CVD method or the like. Among such silicate glasses, the gas used for forming the phosphorus-doped silicate glass (PSG film) is SiH ₄ , PH ₃ , O _3, or the like. The gas used when forming boron-doped silicate glass (BSG film) is SiH ₄ , B ₂ H ₆ , O _3, etc., and the gas used when forming boron-phosphorous-doped silicate glass film (BPSG film). Are SiH ₄ , B ₂ H ₆ , PH ₃ , O _{3 and the} like.

  Next, in the polishing step shown in FIG. 6B, the second insulating film 49 is polished from the surface side to expose the convex portions 47f of the first insulating film 47, and the second insulating film 49 and the conductive film 9 are formed into pixels. The area is divided by the intermediate area 10f. As a result, the pixel electrode 9 a is formed by the divided conductive film 9. In the present embodiment, polishing is performed after the protrusion 47f of the first insulating film 47 is exposed to reduce the height dimension of the protrusion 47f, but the second insulating film 49 is formed on the surface of the conductive film 9 (pixel electrode 9a). Stop polishing while remains thin. In this embodiment, the polishing is stopped while the second insulating film 49 remains on the surface of the conductive film 9 (pixel electrode 9a) with a thickness of about 50 nm. As a result, the height of the protrusion 47f is reduced to about 200 nm.

  In this polishing process, chemical mechanical polishing can be used. In chemical mechanical polishing, a smooth polishing surface can be obtained at high speed by the action of chemical components contained in the polishing liquid and the relative movement between the abrasive and the element substrate 10. Can do. More specifically, in a polishing apparatus, polishing is performed while relatively rotating a surface plate on which a polishing cloth (pad) made of nonwoven fabric, polyurethane foam, porous fluororesin, or the like is attached and a holder for holding the element substrate 10. To do. At that time, for example, an abrasive containing cerium oxide particles having an average particle diameter of 0.01 to 20 μm, an acrylate derivative as a dispersant, and water is supplied between the polishing cloth and the element substrate 10.

  In such polishing, only the second insulating film 49 is polished in the region overlapping with the pixel electrode 9a, whereas the second insulating film 49 and the conductive film 9 are polished in the region overlapping with the inter-pixel region 10f. The convex portion 47f of the first insulating film 47 is polished.

  Since the unevenness caused by the pixel electrode 9a is considerably relaxed when the pixel electrode 9a is formed in this manner, the alignment film 16 may be formed in this state. However, in this embodiment, the portion corresponding to the convex portion 47f is slightly higher than the portion where the second insulating film 49 remains. Therefore, in this embodiment, after the polishing step, the steps described below with reference to FIGS. 6C and 6D are performed, so that the alignment film 16 is formed after the unevenness is eliminated.

  More specifically, after the polishing step, in the conductive film etching step shown in FIG. 6C, the end of the conductive film 9 exposed between the second insulating film 49 and the protrusion 47f (the pixel electrode 9a The edge 9e) is etched. In such etching, either wet etching or dry etching can be used. However, wet etching is preferable because it is desirable to have etching selectivity between the conductive film 9 (pixel electrode 9a) and the insulating film (the first insulating film 47 and the second insulating film 49).

  Next, in the insulating film etching step shown in FIG. 6D, the first insulating film 47 is etched until the height dimension of the convex portion 47f becomes the same as the thickness dimension of the conductive film 9 (pixel electrode 9a). At that time, the second insulating film 49 is also etched. In such etching, either wet etching or dry etching can be used. However, since it is desirable that the etching selectivity between the conductive film 9 (pixel electrode 9a) and the insulating film (the first insulating film 47 and the second insulating film 49) is high, wet etching is preferable. As a result, the pixel electrode 9a is not etched, and the height dimension of the projection 47f is the same as the thickness dimension of the conductive film 9 (pixel electrode 9a). Further, the second insulating film 49 in the region overlapping with the pixel electrode 9a is removed. Therefore, the surface of the pixel electrode 9a and the upper end surface of the convex portion 47f constitute a continuous flat surface. In addition, since a part 49c of the second insulating film 49 remains inside the contact hole 47a, the unevenness caused by the contact hole 47a is relaxed on the surface of the pixel electrode 9a.

  Thereafter, an alignment film 16 is formed as shown in FIG. In addition, since the process after that can use a well-known method, description is abbreviate | omitted.

(Main effects of this form)
As described above, according to this embodiment, after forming the first insulating film 47 having the protrusions 47f extending along the inter-pixel region 10f, the contact hole 47a is formed in the first insulating film 47. Thereafter, the conductive film 9 and the second insulating film 49 are sequentially stacked. Next, in the polishing step, polishing is performed until the convex portion 47f is exposed, and the second insulating film 49 and the conductive film 9 are divided by the convex portion 47f (inter-pixel region 10f). As a result, pixel electrodes 9a are formed by the divided conductive films 9, and the protrusions 47f of the first insulating film 47 remain between the pixel electrodes 9a (inter-pixel region 10f). Accordingly, the unevenness caused by the pixel electrode 9 a is alleviated by the convex portion 47 f of the first insulating film 47. Further, according to this embodiment, since the part 49c of the second insulating film 49 remains on the surface of the pixel electrode 9a in the contact hole 47a, the unevenness caused by the contact hole 47a is not uneven in the second insulating film 49a. Relaxed by the membrane 49. Therefore, when the alignment film 16 is formed, the alignment film can be formed on a flat surface. As a result, the surface of the alignment film 16 is also flat.

  Further, in this embodiment, since the second insulating film 49 is formed on the surface of the conductive film 9, the surface of the conductive film 9 is not polished. Therefore, the thickness of the pixel electrode 9a is not changed by polishing, but is controlled by the thickness when the conductive film 9 is formed. Therefore, in the transmissive liquid crystal device 100, the spectral characteristics of the translucent conductive film constituting the pixel electrode 9a do not vary, so that it is possible to prevent image quality degradation due to the variation in spectral characteristics.

  Further, in this embodiment, after the polishing process, a conductive film etching process for etching the conductive film 9 (end part 9e of the pixel electrode 9a) exposed between the second insulating film 49 and the first convex part 47f; An insulating film etching step for etching the first insulating film 47 and the second insulating film 49 is performed until the height dimension of the portion 47f becomes equal to the thickness dimension of the conductive film 9 (pixel electrode 9a). For this reason, since the height dimension of the convex part 47f is the same as the thickness dimension of the pixel electrode 9a, the area overlapping between the pixel electrodes 9a (inter-pixel area 10f) is the convex part 47f of the first insulating film 47. Is completely flattened.

  In this embodiment, since the second insulating film 49 is silicate glass doped with at least one of phosphorus and boron, the polishing rate is higher than that of the first insulating film 47. Therefore, there is an advantage that a margin with respect to the thickness when forming the second insulating film 49 is large.

[Other embodiments]
In the above embodiment, the example in which the present invention is applied to the transmissive liquid crystal device 100 has been described. However, the present invention may be applied to the reflective liquid crystal device 100. Even in this case, according to this embodiment, the thickness of the pixel electrode 9a is not changed by polishing, but is controlled by the thickness when the conductive film 9 is formed. Therefore, since the thickness of the liquid crystal layer 50 does not vary, it is possible to prevent image quality deterioration due to the thickness variation of the liquid crystal layer 50. In the above embodiment, the example in which the present invention is applied to the liquid crystal device 100 has been described. However, the present invention may be applied to an electro-optical device other than a liquid crystal device such as an organic electroluminescence device.

[Configuration example for electronic devices]
An electronic apparatus including the liquid crystal device 100 according to the above-described embodiment will be described. FIG. 7 is a schematic configuration diagram of a projection type display device using the liquid crystal device 100 to which the present invention is applied. FIGS. 7A and 7B are respectively a projection type display using the transmission type liquid crystal device 100. FIG. 2 is an explanatory diagram of the device and an explanatory diagram of a projection display device using the reflective liquid crystal device 100.

(First example of projection display device)
The projection display device 110 shown in FIG. 7A is a so-called projection type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117 (liquid crystal device 100), a projection optical system 118, a cross dichroic prism 119, and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light, green light, and blue light. The dichroic mirror 113 is configured to transmit red light from the light source 112 and reflect green light and blue light. The dichroic mirror 114 is configured to transmit blue light and reflect green light among the green light and the blue light reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light, green light, and blue light.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are sequentially arranged from the light source 112. The integrator 121 is configured to uniformize the illuminance distribution of the light emitted from the light source 112. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device 100 that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal panel 115c, and a second polarizing plate 115d. Here, the red light incident on the liquid crystal light valve 115 remains s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 115c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light according to the image signal and emit the modulated red light toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert polarized light, and the λ / 2 phase difference plate 115a and the first polarizing plate 115b. It is possible to avoid distortion of 115b due to heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device 100 that modulates green light reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Similarly to the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal panel 116c, and a second polarizing plate 116d. Green light incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal panel 116c is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Accordingly, the liquid crystal light valve 116 is configured to modulate green light in accordance with the image signal and emit the modulated green light toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device 100 that modulates blue light reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114 and then through the relay system 120 in accordance with an image signal. Similarly to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal panel 117c, and a second polarizing plate 117d. Here, since the blue light incident on the liquid crystal light valve 117 is reflected by the two reflecting mirrors 125a and 125b described later of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114, the s-polarized light is reflected. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal panel 117c is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to the image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Accordingly, the liquid crystal light valve 117 is configured to modulate blue light in accordance with an image signal and emit the modulated blue light toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are disposed in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to a long blue light path. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is arranged to reflect the blue light emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light and transmits green light, and the dichroic film 119b is a film that reflects red light and transmits green light. Therefore, the cross dichroic prism 119 is configured to combine the red light, the green light, and the blue light modulated by the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in s-polarized reflection transistor characteristics. Therefore, red light and blue light reflected by the dichroic films 119a and 119b are s-polarized light, and green light transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
In the projection display device 1000 shown in FIG. 7B, the light source unit 890 includes a polarization illumination device 800 in which a light source 810, an integrator lens 820, and a polarization conversion element 830 are arranged along the system optical axis L. . The light source unit 890 also reflects the s-polarized light beam emitted from the polarization illumination device 800 along the system optical axis L by the s-polarized light beam reflection surface 841 and the s-polarized light beam of the polarization beam splitter 840. Of the light reflected from the reflecting surface 841, the dichroic mirror 842 that separates the blue light (B) component and the red light (R) component of the luminous flux after the blue light is separated are separated. And a dichroic mirror 843.

  The projection display device 1000 includes three reflective liquid crystal devices 100 (liquid crystal devices 100R, 100G, and 100B) on which each color light is incident, and the light source unit 890 includes three liquid crystal devices 100 (liquid crystal devices 100R). , 100G, 100B).

  In the projection display apparatus 1000, the light modulated by the three liquid crystal devices 100R, 100G, and 100B is synthesized by the dichroic mirrors 842 and 843 and the polarization beam splitter 840, and then the synthesized light is projected by the projection optical system 850. Is projected onto a projection target member such as a screen 860.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. .

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

9 .. Conductive film, 9a ... Pixel electrode, 10 ... Element substrate, 10f ... Inter pixel area, 10w ... Substrate body, 30 ... Pixel transistor, 47 ... First insulation film, 47a ... Contact hole ··· 47f ··· convex portion, 47g ··· concave portion, 49 ··· second insulating film, 100 · · liquid crystal device, 110, 1000 ··· projection display device

Claims (10)

A first insulating film forming step of forming a first insulating film provided with at least lattice-shaped convex portions on one surface side of the substrate;
A contact hole forming step of forming a contact hole penetrating the first insulating film;
A conductive film forming step of forming a conductive film constituting a pixel electrode on the opposite side of the substrate with respect to the first insulating film;
A second insulating film forming step of forming a second insulating film on the opposite side of the conductive film to the first insulating film;
Polishing the conductive film and the second insulating film until the convex portions are exposed, and dividing the conductive film by the convex portions to form the pixel electrodes;
A method for manufacturing an electro-optical device.   After the polishing step, a conductive film etching step for etching the conductive film exposed between the second insulating film and the convex portion, and until the convex portion and the conductive film form a flat surface. The method of manufacturing an electro-optical device according to claim 1, wherein an insulating film etching step of etching the first insulating film and the second insulating film is performed.   3. The method of manufacturing an electro-optical device according to claim 1, wherein the second insulating film is a silicate glass doped with at least one of phosphorus and boron.   The method of manufacturing an electro-optical device according to claim 1, wherein the conductive film is a light-transmitting conductive film.   The method of manufacturing an electro-optical device according to claim 1, wherein the conductive film is a reflective conductive film. A substrate,
A plurality of pixel electrodes provided on one side of the substrate;
Protrusions provided between the plurality of pixel electrodes and the substrate and extending in an inter-pixel region sandwiched between adjacent pixel electrodes among the plurality of pixel electrodes, and contact holes are formed. 1 insulating film;
A second insulating film overlapping the pixel electrode on the opposite side of the substrate in the contact hole;
An electro-optical device comprising:   The electro-optical device according to claim 6, wherein the convex portion and the pixel electrode form a flat surface.   8. The electro-optical device according to claim 6, wherein the second insulating film is a silicate glass doped with at least one of phosphorus and boron. A projection display device comprising the electro-optical device according to any one of claims 6 to 8,
A projection-type display device comprising: a light source unit that emits illumination light applied to the liquid crystal device; and a projection optical system that projects light modulated by the liquid crystal device.   An electronic apparatus comprising the electro-optical device according to claim 6.

Images