JP2012195870A - Wireless communication device, manufacturing method of passive element, and wireless communication apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wireless communication device which achieves one-chip high frequency circuit, enhances isolation characteristics between an upper layer circuit and a lower layer circuit, and has high mass productivity.SOLUTION: A wireless communication device comprises an RFIC, a capacitor 32, and an inductor 24 arranged in stack. A passive element chip 12 stacked for the RFIC so that at least a part of the capacitor 32 is located between the RFIC and the inductor 24. In the wireless communication device having such features, the passive element chip 12 includes a metal pattern configuring an upper electrode 26 of the capacitor 32 and a metal pattern configuring the inductor 24 arranged side by side. A lower layer metal pattern 18 configuring a lower electrode of the capacitor 32 is preferably extended below the metal pattern configuring the inductor 24.

Description

  The present invention relates to a wireless communication device and a wireless communication device, and more particularly, to a wireless communication device in which a passive element is mounted, a method for manufacturing a passive element constituting the wireless communication device, and a wireless communication device.

Generally, a single or a plurality of passive elements are connected to a high-frequency circuit used for wireless communication for impedance matching.
Conventionally, as shown in FIG. 11, such a passive element has been provided in a wiring pattern that electrically connects an RFIC (Radio Frequency Integrated Circuit) 2 and an antenna 4 constituting the wireless communication device 1. However, such a configuration has a problem that the number of chips mounted on the mounting substrate 5 increases as the number of passive elements 3 used in the circuit increases. Such a problem is caused by the fact that the inductor element is composed of an air core coil formed in a toroidal shape and is not suitable for miniaturization.

  On the other hand, Patent Documents 1 and 2 disclose inductors that can be planarly formed in a spiral shape. In Patent Documents 1 and 2, a passive element that enables planar formation is directly formed on a semiconductor element such as an RFIC, or mounted on a semiconductor element as a W-CSP (Wafer Level Chip Scale Package), and includes a passive element. However, the high-frequency circuit is made into one chip, and the mounting area is drastically reduced.

  According to the techniques disclosed in Patent Documents 1 and 2, it is possible to reduce the mounting area as a high-frequency circuit and to reduce the size of a wireless communication device or a wireless communication device on which the wireless communication device is mounted. . In the technology with such a configuration, a passive element (in particular, an inductor in Patent Documents 1 and 2 in Patent Documents 1 and 2) is formed in a planar manner directly on a semiconductor element or as a chip. The isolation characteristics between the two are low, and the following problems may occur.

  That is, when a current is applied to the inductor, which is a passive element, a magnetic field acts in a direction that intersects the spiral pattern that constitutes the inductor. For this reason, the magnetic field may affect the internal wiring and circuit formed in the semiconductor element.

  For such a problem, a wireless communication device as disclosed in Patent Document 3 is known. The wireless communication device disclosed in Patent Document 3 is a device in which a mesh-like metal pattern is arranged between a semiconductor element or the like constituting a lower layer circuit and a passive element such as an inductor or a capacitor constituting the upper layer circuit. is there.

  According to the wireless communication device having such a configuration, the isolation characteristic between the upper layer circuit and the lower layer circuit is improved, and the influence of the magnetic field due to the inductor on the wiring and circuit in the semiconductor element can be suppressed.

JP 2005-347723 A JP 2008-159654 A JP 2003-51543 A

  According to the wireless communication device disclosed in Patent Document 3, the high-frequency circuit including the passive element for matching is realized as one chip, and the isolation characteristic between the upper layer circuit and the lower layer circuit is improved. be able to.

  However, in a wireless communication device having a configuration as disclosed in Patent Document 3, it is necessary to increase the number of steps for forming a mesh-like metal pattern in exchange for improvement in isolation characteristics. There arises a problem that the mass productivity is lowered as compared with the wireless communication device disclosed in the above.

  Therefore, in the present invention, a high-frequency circuit including a passive element for matching is realized as a single chip, and the isolation characteristics between the upper layer circuit and the lower layer circuit are improved, and the mass-productive wireless communication device and passive element are improved. An object of the present invention is to provide a manufacturing method and a wireless communication device.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

[Application Example 1] An integrated circuit that constitutes a high-frequency circuit, a capacitor and an inductor, the inductor is laminated, and at least a part of the capacitor is positioned between the integrated circuit and the inductor. A wireless communication device comprising: a passive element chip stacked and mounted on the integrated circuit.
According to the wireless communication device having such a feature, it is possible to realize a one-chip high-frequency circuit including a passive element for matching. In addition, since at least a part of the capacitor is interposed between the inductor of the passive element chip arranged in the upper layer and the integrated circuit arranged in the lower layer, the magnetic field generated from the inductor is shielded by the metal pattern constituting the capacitor. And isolation characteristics can be improved. In addition, since the above effect can be obtained without including elements (inductors and capacitors) constituting the passive element chip, the number of processes for forming extra elements is not increased, and high productivity is maintained. Can do.

[Application Example 2] The wireless communication device according to Application Example 1, wherein the passive element chip includes a metal pattern constituting an upper electrode of the capacitor and a metal pattern constituting the inductor side by side, and the capacitor A wireless communication device, wherein a metal pattern constituting the lower electrode of the first metal layer extends to a lower part of the metal pattern constituting the inductor.
With this configuration, it is possible to simultaneously form a metal pattern that shields the magnetic field generated from the inductor in the step of forming the lower electrode of the capacitor. Therefore, a layer only for forming a pattern for shielding a magnetic field and a process for forming the layer are not necessary. For this reason, it is possible to reduce the height and improve the mass productivity by reducing the number of steps.

[Application Example 3] The wireless communication device according to Application Example 2, wherein a portion of the metal pattern constituting the lower electrode of the capacitor that is positioned below the metal pattern constituting the upper electrode and the inductor are constituted A wireless communication device comprising a notch formed in a metal pattern that connects a portion located below a metal pattern to be cut.
Even if it is a case where it is such a structure, the effect similar to the said application example 2 can be acquired.

Application Example 4 In the wireless communication device according to Application Example 2 or 3, the metal pattern located below the metal pattern constituting the inductor among the metal patterns constituting the lower electrode of the capacitor is mesh-shaped. A wireless communication device characterized by being formed into
In such a configuration, the same effect as in the above application example 2 can be obtained, and the area of the metal pattern located under the inductor is reduced, so that an increase in parasitic capacitance is suppressed. Can do.

Application Example 5 A first insulating layer forming step for forming a first insulating layer on an element substrate, and a lower metal pattern forming for forming a lower metal pattern constituting a lower electrode of a capacitor on the upper surface of the first insulating layer A second insulating layer forming step of forming a second insulating layer on the upper surface of the lower metal pattern, and an upper electrode of the capacitor at a position overlapping the lower metal pattern on the upper surface of the second insulating layer. And an upper layer metal pattern forming step of forming an upper layer metal pattern constituting the inductor.
According to the method for manufacturing a passive element having such characteristics, it is possible to manufacture a passive element that can shield the magnetic field from the inductor without increasing the number of steps.

  Application Example 6 A wireless communication device including the wireless communication device according to any one of Application Examples 1 to 4.

It is a disassembled perspective view which shows the structure of the passive element chip | tip which comprises the radio | wireless communication device which concerns on embodiment. It is side surface sectional drawing which shows the structure of the radio | wireless communication device which concerns on embodiment. It is a top view which shows the structure of the principal part of the radio | wireless communication device which concerns on embodiment. It is front sectional drawing of the passive element chip | tip which comprises the radio | wireless communication device which concerns on embodiment. It is a flow which shows the manufacturing process of the radio | wireless communication device which concerns on embodiment. It is a figure which shows the structure of the upper layer metal pattern and lower layer metal pattern which comprise the passive element chip which concerns on the 1st modification of the radio | wireless communication device which concerns on embodiment. It is a figure which shows the structure of the upper layer metal pattern and lower layer metal pattern which comprise the passive element chip which concerns on the 2nd modification of the radio | wireless communication device which concerns on embodiment. It is a figure which shows the structure of the upper layer metal pattern and lower layer metal pattern which comprise the passive element chip which concerns on the 3rd modification of the radio | wireless communication device which concerns on embodiment. It is a figure which shows the front cross section of the passive element chip which concerns on the 4th modification of the radio | wireless communication device which concerns on embodiment. It is a block diagram which shows the structure of the inkjet printer as an example of the wireless communication apparatus carrying the wireless communication device which concerns on embodiment. It is a perspective view which shows the structure of the conventional radio | wireless communication device.

Hereinafter, embodiments of the wireless communication device and the wireless communication device of the present invention will be described in detail with reference to the drawings.
In the present embodiment, as an example of a wireless communication device, an RFIC that constitutes a high-frequency circuit and an element that includes a passive element for impedance matching between the RFIC and an antenna (not shown) are described with reference to FIGS. explain. FIG. 1 is an exploded perspective view showing a configuration of a passive element chip constituting a wireless communication device. FIG. 2 is a side sectional view showing the configuration of the wireless communication device. FIG. 3 is a diagram illustrating a planar configuration of a main part of the wireless communication device. FIG. 4 is a front cross-sectional view showing the configuration of the passive element chip constituting the wireless communication device.
The wireless communication device 10 according to the present embodiment is configured based on the RFIC 40, the passive element chip 12, the lead frame 44, and the mold layer 60.

  The RFIC 40 is a high-frequency integrated circuit element formed in a semiconductor layer. The passive element chip 12 is an element chip including both an inductor 24 and a capacitor 32 used for impedance matching of the RFIC 40. The passive element chip 12 according to the present embodiment can be mounted on the active surface of the RFIC 40 by configuring the planar size (die size) to be slightly smaller than the planar size of the active surface of the RFIC 40. . Hereinafter, a specific configuration of the passive element chip 12 will be described.

  The passive element chip 12 is configured based on an element substrate 14, a capacitor 32, and an inductor 24. The element substrate 14 is preferably a bare material made of a semiconductor or an insulator such as Si, glass, quartz, and quartz. When the element substrate 14 is made of a semiconductor, a shielding effect for shielding a magnetic field generated from the inductor 24, which will be described later in detail, can be obtained, and the isolation characteristics with the RFIC 40 can be improved.

The capacitor 32 and the inductor 24 are configured by the first insulating layer 16, the lower metal pattern 18, the second insulating layer 20, and the upper metal pattern 30 that are stacked on one main surface of the element substrate 14 described above.
The first insulating layer 16 is provided on one main surface of the element substrate 14. The first insulating layer 16 is an insulating film made of polyimide resin or the like.

  The lower metal pattern 18 is provided on the upper surface of the first insulating layer 16. The lower metal pattern 18 includes, for example, a seed layer, a wiring layer, and a plating layer. In the drawing, the lower metal pattern 18 is shown as one layer for the sake of simplicity. Each layer is made of a single material or a composite material of a conductive material such as Cu, Au, Ag, Ti, W, Ni, and a titanium-based alloy such as Ti—W and Ti—N. As an example, a seed layer is made of Ti-W, a wiring layer is made of Cu, and a plating layer is made of Cu.

  The lower metal pattern 18 is basically a metal pattern constituting the lower electrode of the capacitor 32, but is a solid pattern extending to the lower part of the inductor 24 constituted by an upper metal pattern 30 to be described in detail later. It is. With such a configuration, the extended metal pattern has a shielding effect for shielding the magnetic field generated from the inductor 24. For this reason, even when the passive element chip 12 is mounted on the active surface of the RFIC 40, the isolation characteristics with the RFIC 40 can be improved.

  The second insulating layer 20 is provided on the upper surface of the lower metal pattern 18. Similar to the first insulating layer 16, the second insulating layer 20 is an insulating film made of a resin such as polyimide. The second insulating layer 20 includes an upper electrode 26 and an inductor 24 of the capacitor 32 formed of an upper metal pattern 30 to be described in detail later. It plays the role which prevents the short circuit with the lower layer metal pattern 18 mentioned above.

  The upper metal pattern 30 is provided on the upper surface of the second insulating layer 20. The upper metal pattern 30 may be composed of a seed layer, a wiring layer, and a plating layer as in the lower metal pattern 18 (the upper metal pattern 30 is shown as one layer in the drawing). The material constituting the upper layer metal pattern 30 may be the same as that of the lower layer metal pattern 18, and is conductive such as Cu, Au, Ag, Ti, W, Ni, and titanium-based alloys such as Ti-W and Ti-N. What is necessary is just to comprise by the simple substance of a material, or a composite material. As an example, a seed layer is made of Ti-W, a wiring layer is made of Cu, and a plating layer is made of Cu.

  The upper metal pattern 30 constitutes the upper electrode 26 of the capacitor 32 and the inductor 24. In the present embodiment, the upper metal pattern 30 forms a terminal 28 connected to the lower electrode constituting the lower electrode of the capacitor 32. The upper metal pattern 30 constituting the upper electrode 26 of the capacitor 32 is a solid pattern. On the other hand, the upper metal pattern 30 constituting the inductor 24 is a pattern in which the planar form is spiral. Terminals 25 a and 25 b for inputting and outputting signals are provided at both ends of the spiral metal pattern constituting the inductor 24. Further, the terminal 48a of the lower layer metal pattern 18 constituting the lower electrode of the capacitor 32 is electrically connected to the lower layer metal pattern 18 through the through hole 22 or the like.

  A third insulating layer 34 as a protective film is provided on the upper surface of the upper metal pattern 30. Similarly to the first and second insulating layers 16 and 20, the third insulating layer 34 can also be made of a resin such as polyimide. The third insulating layer 34 is provided with a plurality of openings 36 for exposing a part of the upper metal pattern 30. The opening 36 is provided in a portion corresponding to the terminals 25 a and 25 b of the inductor 24, a portion corresponding to the terminal 28 connected to the lower electrode of the capacitor 32, and a portion exposing a part of the upper electrode 26 of the capacitor 32. It is done.

  The lead frame 44 is a metal plate that serves as a frame and external electrode that supports the RFIC 40 on which the passive element chip 12 is mounted. The lead frame 44 includes a base 46 and lead electrodes 48. The base 46 is a pedestal for mounting the RFIC 40 described above. The lead electrode 48 has one end 48 a disposed inside a mold layer 60, which will be described in detail later, for electrical conduction with the RFIC 40 and the passive element chip 12, and the other end 48 b projected to the outside of the mold layer 60. By providing it, it is a plate that plays a role as an external electrode. The externally protruding portion of the lead electrode 48 is bent and formed into a desired shape after the mold layer 60 is formed.

  The mold layer 60 is a protective layer that covers a part of the base 46 and the lead electrode 48 in the RFIC 40, the passive element chip 12, and the lead frame 44 described above. The mold layer 60 may be made of an insulating resin, such as an epoxy resin.

  In the wireless communication device 10 having such a basic configuration, the pad 42 formed on the active surface of the RFIC 40, the terminals 25a, 25b, and 28 formed on the upper surface of the passive element chip 12, the upper electrode 26 of the capacitor 32, and the lead electrode One end 48a of 48 is electrically connected via a wire 50 as necessary.

  According to the wireless communication device 10 having such a configuration, a high-frequency circuit including passive elements for impedance matching such as the inductor 24 and the capacitor 32 can be formed into one chip. Further, since the magnetic field generated from the inductor 24 disposed on the upper layer of the RFIC 40 is shielded by the lower layer metal pattern 18 constituting the lower electrode of the capacitor 32 disposed between the inductor 24 and the RFIC 40, the isolator between the RFIC 40 and the inductor 24 is isolated. The transmission characteristics can be improved. Furthermore, since the metal pattern for shielding the magnetic field generated from the inductor 24 is formed in the same layer as the metal pattern constituting the lower electrode of the capacitor 32, the number of processes is reduced as compared with the conventional multilayer passive element. And mass productivity can be improved.

Next, a method for manufacturing the wireless communication device according to the present embodiment will be described with reference to FIG.
First, the manufacturing process of the passive element chip 12 will be described. First, a first insulating layer 16 as a passivation film is formed on the element substrate 14. The first insulating layer 16 may be formed by forming a resin film by spin-off, screen printing, ink jet method, or the like (step 1: first insulating layer forming step). Next, a lower metal pattern 18 is formed on the upper surface of the first insulating layer 16. The lower metal pattern 18 may be formed by forming a mask using a photolithography method and forming a metal pattern shape by etching using the mask (step 2: lower metal pattern forming step).

  Next, the second insulating layer 20 is formed on the upper surface of the lower metal pattern 18. Similarly to the formation of the first insulating layer 16 described above, the second insulating layer 20 may be formed by using a technique such as spin-off, screen printing, and inkjet. Here, the lower metal pattern 18 needs to be electrically connected to a terminal 28 (a lower electrode terminal in the capacitor 32) formed in the upper metal pattern 30. For this reason, an opening is provided in the second insulating layer 20 at a position corresponding to the lower portion of the terminal 28, and a through hole 22 filled with a conductive member is formed (step 3: second insulating layer forming step).

  On the upper surface of the second insulating layer 20, the spiral inductor 24, the upper electrode 26 constituting the capacitor 32, and the terminal 28 are formed by the upper metal pattern 30. As the procedure, first, a metal pattern is formed on the entire upper surface of the second insulating layer 20. Next, the metal pattern is covered with a resist film, and the resist film is formed using a photolithography method to obtain a mask having a desired shape. After the mask formation with the resist film is completed, the metal pattern is etched using the mask to obtain the shapes of the inductor 24, the upper electrode 26, and the terminal 28 for the lower electrode of the capacitor 32 (step 4: upper layer metal pattern forming step) ).

  A third insulating layer 34 as a protective film is formed on the top surfaces of the inductor 24, the upper electrode 26, and the terminal 28 formed by the upper metal pattern 30. The third insulating layer 34 may be formed by using the same technique as the first and second insulating layers 16 and 20. In the third insulating layer 34, the terminals 24 a and 25 b constituting the inductor 24, a part of the upper electrode 26 of the capacitor 32, and the capacitor 32 are formed so that the inductor 24 and the capacitor 32 can be electrically connected to the outside. An opening 36 for exposing the terminal 28 connected to the lower electrode (lower metal pattern 18) is formed (step 5: third insulating layer forming step). By manufacturing the passive element chip 12 by such a method, it is possible to manufacture the passive element chip 12 that can shield the magnetic field generated from the inductor 24 toward the element substrate 14 without increasing the number of processes.

  Next, the passive element chip 12 completed after the formation of the third insulating layer 34 is mounted on an IC (RFIC 40) on which a high-frequency circuit is formed. An adhesive (not shown) is used for mounting the passive element chip 12 on the RFIC 40. Since the adhesive surface is an inactive surface, the adhesive used here may be either conductive or non-conductive (step 6: passive element chip mounting step).

  Next, the RFIC 40 on which the passive element chip 12 is mounted is mounted on the base 46 in the lead frame 44. The RFIC 40 is mounted on the base 46 by an adhesive (not shown), similarly to the mounting of the passive element chip 12 on the RFIC 40. Since the bonding surface here is also a non-active surface, the nature of the adhesive may be either conductive or non-conductive (step 7: RFIC mounting step).

  After the RFIC 40 having the passive element chip 12 mounted thereon is mounted on the lead frame 44, the terminals 25 a, 25 b, 28 of the passive element chip 12, a part of the upper electrode 26, the pads 42 of the RFIC 40, and the lead electrodes 48 of the lead frame 44. Make electrical connections at. The electrical connection is performed by appropriately connecting the terminals 25a, 25b, 28, the upper electrode 26, the pad 42, and one end 48a of the lead electrode 48 with a metal wire 50 (step 8: bonding process).

  After the bonding process is completed, the lead frame 44 is sandwiched between molds, and the base 46, the RFIC 40, the passive element chip 12, one end 48a of the lead electrode 48, and the wire 50 are covered with resin to form a mold layer 60 ( Step 9: Molding process). After the molding process, the lead frame 44 is individually cut, and the lead electrode 48 protruding from the mold layer 60 is bent into a desired shape, whereby the wireless communication device 10 is completed (step 10: singulation process) ).

  Next, a modification of the wireless communication device according to the present embodiment will be described. First, the first modification will be described with reference to FIG. FIG. 6 is a diagram showing the form of the upper metal pattern 30 and the lower metal pattern 18a of the passive element chip constituting the wireless communication device according to the first modification. As can be seen from FIG. 6, the form of the upper metal pattern 30 includes the inductor 24, the upper electrode 26 of the capacitor 32, and the terminal 28, and is similar to the basic form described above. On the other hand, the lower metal pattern 18 a is different in that a cut 19 is provided between a region 18 a 1 constituting the lower electrode of the capacitor 32 and a region 18 a 2 located under the inductor 24. Even when the lower metal pattern 18a has such a form, the region 18a1 constituting the lower electrode of the capacitor 32 and the region 18a2 located under the inductor 24 are partially connected, so that one sheet It can be regarded as a metal film. Further, even when the lower layer metal pattern 18a has such a form, the same operation and effect as the basic form can be obtained.

  Next, a second modification will be described with reference to FIG. FIG. 7 is a diagram showing the form of the upper metal pattern 30 and the lower metal pattern 18b of the passive element chip constituting the wireless communication device according to the second modification. Also in the present modification, as in the first modification described above, the upper metal pattern 30 is the same as in the basic mode. On the other hand, the lower metal pattern 18b forms a region 18b2 located below the inductor 24 in a mesh shape. Here, the line width of the metal pattern constituting the mesh is preferably 1 to 10 μm, and the interval between the lines is preferably about 10 to 100 μm. Even with such a configuration, it is possible to obtain an effect of shielding a magnetic field generated from the inductor 24 due to a wireless communication signal. Moreover, according to such a configuration, the ratio of the area of the metal pattern of the region 18b2 located under the inductor 24 can be reduced. For this reason, it is possible to suppress an increase in parasitic capacitance in the magnetic field shielding portion while securing the area of the region 18b1 constituting the lower electrode of the capacitor 32. Moreover, about the other effect | action and effect, the effect | action and effect similar to the said basic form can be acquired.

  Next, a third modification will be described with reference to FIG. FIG. 8 is a diagram showing the form of the upper metal pattern 30a and the lower metal pattern 18 of the passive element chip constituting the wireless communication device according to the third modification. In the present modification, unlike the first and second modifications, the lower layer metal pattern 18 has a solid pattern similar to the basic form, and the upper layer metal pattern 30a has a different form. Specifically, the inductor 24 and the upper electrode 26 of the capacitor 32 formed on the upper metal pattern 30a are each formed of a plurality of metal patterns (substantially regarded as one because they are electrically connected). . Specifically, the inductor 24 includes a metal pattern 24a and a metal pattern 25b. The upper electrode 26 includes a metal pattern 26a and a metal pattern 26b. Even when such an upper metal pattern 30a has such a form, the same operations and effects as the basic form can be obtained.

  Further, a fourth modification will be described with reference to FIG. FIG. 9 is a diagram showing a front cross-sectional structure of a passive element chip 12a constituting a fourth modification. In the basic mode, the inductor 24 and the upper electrode 26 of the capacitor 32 are arranged in parallel (side by side) by the same metal pattern (upper metal pattern 30), and the lower electrode of the capacitor 32 and the inductor 24 are arranged by the lower metal pattern 18. A magnetic field shield was formed. On the other hand, in this modification, the first insulating layer 16 is formed on one surface of the element substrate 14, and the lower metal pattern 18 c that becomes the lower electrode of the capacitor 32 is formed on the upper surface. Then, the second insulating layer 20 is formed on the upper surface of the lower metal pattern 18c, and the intermediate metal pattern 21 to be the upper electrode of the capacitor 32 is formed on the upper surface. Further, the third insulating layer 34a is formed on the upper surface of the middle layer metal pattern 21, the upper layer metal pattern 30b constituting the inductor is formed on the upper surface, and the fourth insulating layer 37 is provided as a protective film covering the upper layer metal pattern 30b.

  Thus, in this modification, by increasing the metal pattern by one layer, the intermediate layer metal pattern 21 and the lower electrode constituting the upper electrode of the capacitor 32 between the inductor (the upper layer metal pattern 30b constituting the inductor and the element substrate 14). In this configuration, the number of metal pattern layers disposed between the inductor and the element substrate 14 increases, resulting from the inductor. The shielding effect of the magnetic field can be enhanced, and the die size of the passive element chip can be reduced by stacking the inductor and the capacitor that are arranged side by side.

Next, a wireless communication device equipped with a wireless communication device having the above configuration will be described with reference to FIG. The example shown in FIG. 10 is a block diagram showing the configuration of the control system of the ink jet printer 100.
The ink jet printer 100 includes a recording control unit 110 including a known microcomputer control circuit, and is controlled by the recording control unit 110. The recording control unit 110 includes system devices such as a ROM 114, a RAM 112, an ASIC (application specific integrated circuit) 118, a CPU 120, and a nonvolatile memory 116 connected by a system bus. The recording control unit 110 includes a head driver 122, a CR motor driver 124, and a PF motor driver 126 as control devices.

  The ROM 114 stores a recording control program (firmware) and the like necessary for the control of the inkjet printer 100 by the CPU 120. The RAM 112 is used as a work area for the CPU 120 and a storage area for recording data. The CPU 120 performs arithmetic processing for executing recording control of the inkjet printer 100 and other necessary arithmetic processing. The nonvolatile memory 116 stores various data necessary for processing the recording control program.

  The ASIC 118 drives and controls the recording head 132, the CR motor 134, and the PF motor 136 via each driver. The recording head 132 is a portion that forms dots by ejecting ink onto recording paper, and the CR motor 134 is a motor that drives a carriage (not shown) that moves the recording head 132. The PF motor 136 is a motor that drives a roller (not shown) for conveying the recording paper.

  Further, the inkjet printer 100 includes a hard disk drive 128 and a wireless communication module 130. The hard disk drive 128 is an external storage device mainly for storing image data, and is controlled by a drive control circuit provided in the ASIC 118. The wireless communication module 130 is a module including the wireless communication device 10 according to the present invention, and is controlled by a communication control circuit included in the ASIC 118 to acquire and output image data.

DESCRIPTION OF SYMBOLS 10 ......... Wireless communication device, 12 ......... Passive element chip | tip, 14 ......... Element board | substrate, 16 ......... 1st insulating layer, 18 ......... Lower metal pattern, 20 ......... 2nd insulating layer, 22 ..... Through hole, 24 ..... Inductor, 26 .... Upper electrode, 28 ..... Terminal, 30 .... Upper metal pattern, 32 ..... Capacitor, 34 .... Third insulating layer, 36 .. ...... Opening, 40 ... RFIC, 42 ... Pad, 44 ... Lead frame, 46 ... Base, 48 ... Lead electrode, 60 ... Mold layer, 100 ... Inkjet printer .

Claims (6)

An integrated circuit constituting a high-frequency circuit;
A passive element having a capacitor and an inductor, wherein the inductor is stacked and mounted on the integrated circuit so that at least a part of the capacitor is positioned between the integrated circuit and the inductor A wireless communication device comprising: a chip. The wireless communication device according to claim 1,
The passive element chip includes a metal pattern constituting the upper electrode of the capacitor and a metal pattern constituting the inductor side by side, and a metal pattern constituting the lower electrode of the capacitor is disposed below the metal pattern constituting the inductor. A wireless communication device characterized by being extended to The wireless communication device according to claim 2,
Of the metal pattern constituting the lower electrode of the capacitor, a cut is formed in the metal pattern connecting the portion located below the metal pattern constituting the upper electrode and the portion located below the metal pattern constituting the inductor. A wireless communication device provided. The wireless communication device according to claim 2 or 3,
A wireless communication device, wherein a metal pattern located below a metal pattern constituting the inductor among metal patterns constituting a lower electrode of the capacitor is formed in a mesh shape. A first insulating layer forming step of forming a first insulating layer on the element substrate;
A lower metal pattern forming step of forming a lower metal pattern constituting a lower electrode of the capacitor on the upper surface of the first insulating layer;
A second insulating layer forming step of forming a second insulating layer on the upper surface of the lower metal pattern;
An upper metal pattern forming step of forming an upper metal pattern constituting an upper electrode and an inductor of the capacitor at a position overlapping with the lower metal pattern on the upper surface of the second insulating layer;
A method of manufacturing a passive element having A wireless communication device comprising the wireless communication device according to claim 1.

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